A gas distribution apparatus

Abstract

The utility model discloses a gas distribution device belongs to semiconductor technical field, and the gas distribution device at least includes: cavity, is used to place a wafer, at least one gas spraying part, interval setting on the wafer, gas input pipeline is apart from the side intercommunication of gas spraying part wafer, and multiple gas injection structure, surrounds setting on the lateral wall of cavity, and gas injection structure includes first guide rail, second guide rail, gas transmission pipeline and gas output pipeline, first guide rail is perpendicular to the plane where the wafer is and is arranged on the inner wall of cavity, second guide rail is perpendicular to first guide rail and is arranged, gas transmission pipeline is along second guide rail and is arranged, and gas output pipeline is connected with the one end of gas transmission pipeline away from first guide rail. The utility model provides a gas distribution device, can make the even distribution of gas on the wafer, improves the quality of etching or deposition process.

Description

Technical Field

[0001] This utility model belongs to the field of semiconductor technology, and specifically relates to a gas distribution device. Background Technology

[0002] Etching and deposition, as crucial processes in semiconductor manufacturing, play a decisive role in semiconductor quality. During etching or deposition, the uniformity of gas distribution on the wafer significantly affects the uniformity of etching depth, as well as the uniformity of the thickness and composition of the deposited film on the wafer surface, ultimately determining the yield of the semiconductor product. However, when delivering gas to the wafer surface using existing gas distribution devices, the gas flow rate at the wafer edges is often lower than that at the wafer center, resulting in uneven gas distribution on the wafer and consequently affecting the quality of the etching or deposition process. Utility Model Content

[0003] The purpose of this invention is to provide a gas distribution device that can improve the distribution of gas at the center and edge of the wafer, making the gas evenly distributed on the wafer, thereby improving the quality of etching or deposition processes.

[0004] To solve the above-mentioned technical problems, this utility model is achieved through the following technical solution:

[0005] This utility model provides a gas distribution device, comprising at least:

[0006] A cavity for holding a wafer;

[0007] At least one gas spraying component is disposed at intervals on the wafer;

[0008] A gas input pipe is connected to the side of the gas spraying component away from the wafer; and

[0009] Multiple gas injection structures are arranged around the side wall of the cavity, and each gas injection structure includes a first guide rail, a second guide rail, a gas transmission pipe, and a gas output pipe. The first guide rail is arranged perpendicular to the plane where the wafer is located on the inner wall of the cavity, the second guide rail is arranged perpendicular to the first guide rail, the gas transmission pipe is arranged along the second guide rail, and the gas output pipe is connected to the end of the gas transmission pipe away from the first guide rail.

[0010] In one embodiment of the present invention, the gas injection structure further includes a plurality of air intake channels, which are spaced apart along the first guide rail on the side wall of the cavity, and each air intake channel extends in the direction of the first guide rail and passes through the first guide rail.

[0011] In one embodiment of the present invention, one end of the gas transmission channel away from the first guide rail is aligned with the second guide rail, and the other end extends in the direction of the first guide rail and is connected to one of the air intake channels.

[0012] In one embodiment of this utility model, the gas injection structure further includes a guide rail connecting valve, which is movably connected to the first guide rail and the second guide rail.

[0013] In one embodiment of this utility model, the second guide rail is a telescopic guide rail, and the gas transmission pipeline is a flexible pipeline.

[0014] In one embodiment of this utility model, the second guide rail and the gas transmission pipeline are fixedly connected.

[0015] In one embodiment of the present invention, the gas injection structure further includes a switching valve, which is disposed between the second guide rail and the gas output pipe.

[0016] In one embodiment of the present invention, the gas injection structure further includes a controller, which is disposed on the gas output pipe.

[0017] In one embodiment of the present invention, the gas injection structure further includes a steering wheel, which is disposed on the gas output pipe on the side of the controller away from the switching valve.

[0018] In one embodiment of the present invention, the gas injection structure further includes an ion generator, which is disposed on the gas output pipe on the side of the steering wheel away from the controller.

[0019] In summary, this utility model provides a gas distribution device. By improving the structure of the gas distribution device, the unexpected technical effect of this application is that it can improve the distribution of gas at the center and edge of the wafer, making the gas uniformly distributed on the wafer, thereby improving the quality of etching or deposition processes and thus increasing the yield of semiconductor products. Moreover, the gas distribution device provided by this utility model can replenish and deliver gas to various locations on the wafer, further improving the uniformity of gas distribution on the wafer, thereby further improving the quality of etching or deposition processes. Attached Figure Description

[0020] To more clearly illustrate the technical solutions of the embodiments of this utility model, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 This is a schematic diagram of a gas distribution device in one embodiment.

[0022] Figure 2 for Figure 1 Enlarged view of the gas injection structure.

[0023] Label Explanation:

[0024] 10. Cavity; 11. Wafer; 12. Base plate; 13. Gas spraying component; 131. First spraying component; 132. Second spraying component; 133. Third spraying component; 14. Gas input pipe; 15. Gas injection structure; 151. Inlet channel; 152. First guide rail; 153. Second guide rail; 154. Guide rail connecting valve; 155. Gas transmission pipe; 156. Gas output pipe; 157. Switch valve; 158. Controller; 159. Steering wheel; 1510. Ion generator. Detailed Implementation

[0025] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of the present utility model.

[0026] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the specification of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of this application.

[0027] In the description of this specification, it should be understood that the terms "center," "upper," "lower," "front," "rear," "left," and "right," etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing this solution and simplifying the description, and do not indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this solution. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0028] Please see Figures 1 to 2As shown, this utility model provides a gas distribution device, including, for example, a cavity 10, a gas spraying component 13, a gas input pipe 14, and a gas injection structure 15. The cavity 10 is used to place a wafer 11. The gas spraying component 13 is spaced apart on the wafer 11. The gas input pipe 14 is connected to the side of the gas spraying component 13 away from the wafer 11. The gas injection structure 15 includes a first guide rail 152, a second guide rail 153, a gas transmission pipe 155, and a gas output pipe 156. The first guide rail 152 is perpendicular to the plane of the wafer 11 and is disposed on the inner wall of the cavity 10. The second guide rail 153 is perpendicular to the first guide rail 152. The gas transmission pipe 155 is disposed along the second guide rail 153. The gas output pipe 156 is connected to the end of the gas transmission pipe 155 away from the first guide rail 152. In the gas distribution device provided by this utility model, when the gas spraying component 13 delivers gas to the surface of the wafer 11, the gas flow rate at the edge of the wafer 11 is easily lower than the gas flow rate at the center of the wafer 11. Therefore, the gas injection structure 15 supplements the gas delivery to the edge of the wafer 11 to make the gas evenly distributed across the entire surface of the wafer 11, thereby improving the quality of processes such as etching or deposition. Moreover, the gas distribution device provided by this application can be applied to various semiconductor processes such as etching or deposition. In this embodiment, the application of the gas distribution device in the etching process is used as an example to describe the gas distribution device.

[0029] Please see Figures 1 to 2 As shown, in one embodiment of this utility model, the cavity 10 includes, for example, a top surface, a bottom surface, and a side wall. The top surface and the bottom surface are arranged opposite to each other, and the side wall connects the top surface and the bottom surface, so that the interior of the cavity 10 forms a space for accommodating the subsequently installed base 12, wafer 11, gas spraying component 13, and gas spraying structure 15, etc. This application does not limit the specific shape of the cavity 10, and it can be selected according to actual needs.

[0030] Please see Figures 1 to 2 As shown, in one embodiment of this utility model, a base 12 is disposed within the cavity 10. The base 12 is disposed, for example, on the bottom surface of the cavity 10, to support the wafer 11. This application does not limit the shape and size of the base 12, and it can be selected according to actual needs. In this embodiment, the base 12 is, for example, cylindrical, and its diameter is, for example, larger than the size of the wafer 11, so that the base 12 can stably support the wafer 11.

[0031] Please see Figures 1 to 2 As shown, in one embodiment of this invention, the wafer 11 is placed inside the cavity 10. Specifically, in this embodiment, the wafer 11 is placed, for example, on a substrate 12, waiting for gas to be delivered to its surface for etching.

[0032] Please see Figures 1 to 2As shown, in one embodiment of this invention, gas spraying components 13 are spaced apart on the wafer 11 to uniformly spray gas onto the surface of the wafer 11. There may be at least one gas spraying component 13, or multiple gas spraying components 13 spaced apart. In this embodiment, there are, for example, three gas spraying components 13, including a first spraying component 131, a second spraying component 132, and a third spraying component 133. The first spraying component 131 is disposed on the central region of the wafer 11, sharing the same axis with the wafer 11. The second spraying component 132 and the third spraying component 133 are disposed on either side of the first spraying component 131, with their outlets facing the edge of the wafer 11. Gas is delivered to the central region of the wafer 11 through the first spraying component 131, and gas is delivered to the edge of the wafer 11 through the second spraying component 132 and the third spraying component 133.

[0033] Please see Figures 1 to 2 As shown, in one embodiment of this utility model, the gas input pipe 14 is connected to the side of the gas spraying component 13 away from the wafer 11. Specifically, in this embodiment, the sides of the first spraying component 131, the second spraying component 132, and the third spraying component 133 away from the wafer 11 are all connected to the gas input pipe 14. By providing the gas input pipe 14, gas is introduced into the first spraying component 131, the second spraying component 132, and the third spraying component 133. However, because the distance between the first spraying component 131 and the outlet of the gas input pipe 14 is short, while the distances between the second spraying component 132 and the third spraying component 133 and the outlet of the gas input pipe 14 are long, the gas flow rate at the edge of the wafer 11 is easily lower than the gas flow rate at the center of the wafer 11, resulting in uneven gas distribution across the entire surface of the wafer 11. The gas transported in the gas input pipe 14 is, for example, one or more of the etching gases such as trifluoromethane, difluoromethane, nitrogen trifluoride, sulfur hexafluoride, nitrogen or oxygen, or one or more of the deposition gases such as silane, chlorosilane, dichlorosilane, disilane or tungsten hexafluoride.

[0034] Please see Figures 1 to 2As shown, in one embodiment of this invention, a gas injection structure 15 is arranged around the inner wall of the cavity 10. For example, there are multiple gas injection structures 15, which are equidistantly arranged on the inner wall of the cavity 10, with the outlets of the gas injection structures 15 facing the edge of the wafer 11. By providing the gas injection structures 15, gas is supplied to the edge of the wafer 11, preventing the gas flow rate at the edge of the wafer 11 from being less than the gas flow rate at the center of the wafer 11. This ensures uniform gas distribution across the entire surface of the wafer 11, resulting in more uniform etching depths at different locations on the wafer 11 and improved etching quality.

[0035] Please see Figures 1 to 2 As shown, in one embodiment of this utility model, the gas injection structure 15 includes, for example, an air inlet channel 151, a first guide rail 152, a second guide rail 153, a guide rail connecting valve 154, a gas transmission pipe 155, a gas output pipe 156, a switching valve 157, a controller 158, and a steering wheel 159. The first guide rail 152 is perpendicular to the plane where the wafer 11 is located and is disposed on the inner wall of the cavity 10, serving to support the subsequently installed second guide rail 153 and guide rail connecting valve 154.

[0036] Please see Figures 1 to 2 As shown, in one embodiment of this utility model, an air intake channel 151 is disposed on the side wall of the cavity 10 along the first guide rail 152. For example, there are multiple air intake channels 151, spaced apart, each extending from the side wall of the cavity 10 towards the first guide rail 152 and passing through it. Specifically, in this embodiment, each air intake channel 151 is disposed parallel to the wafer 11 and is used to deliver gas into a subsequently disposed gas transmission pipe 155, and each air intake channel 151 can independently deliver gas into the gas transmission pipe 155. The type of gas delivered in the air intake channel 151 is the same as the type of gas delivered in the gas input pipe 14.

[0037] Please see Figures 1 to 2 As shown, in one embodiment of this utility model, the second guide rail 153 is disposed perpendicular to the first guide rail 152. Specifically, in this embodiment, the second guide rail 153 is disposed perpendicularly on the side of the first guide rail 152 away from the side wall of the cavity 10, and the second guide rail 153 is, for example, a telescopic guide rail, that is, the second guide rail 153 can telescopically move in a direction parallel to the wafer 11.

[0038] Please see Figures 1 to 2As shown, in one embodiment of this utility model, the gas transmission pipe 155 is arranged along the second guide rail 153. Specifically, one end of the gas transmission pipe 155 is connected to an air inlet channel 151, and the other end is arranged parallel to the second guide rail 153. The gas transmission pipe 155 is, for example, a flexible pipe, meaning that the gas transmission pipe 155 can extend and retract with the connection point between the gas transmission pipe 155 and the air inlet channel 151 as the base point. Moreover, in this embodiment, the gas transmission pipe 155 is fixedly connected to the second guide rail 153. Since the second guide rail 153 can extend and retract in a direction parallel to the wafer 11, the extension and retraction of the second guide rail 153 simultaneously drives the gas transmission pipe 155 to extend and retract, thereby changing the position of the orthographic projection of the end of the gas transmission pipe 155 away from the first guide rail 152 on the wafer 11.

[0039] Please see Figures 1 to 2 As shown, in one embodiment of this utility model, the gas output pipe 156 is connected to the end of the gas transmission pipe 155 away from the first guide rail 152. Specifically, the gas output pipe 156 and the gas transmission pipe 155 are arranged perpendicularly. In this embodiment, while the second guide rail 153 drives the gas transmission pipe 155 to extend and retract, the gas transmission pipe 155 can also drive the gas output pipe 156 to extend and retract, thereby changing the position of the orthographic projection of the gas output pipe 156 on the wafer 11, that is, changing the vertical distance between the outlet of the gas output pipe 156 and the center of the wafer 11, thereby facilitating the adjustment of the specific position of the gas output from the gas output pipe 156 sprayed onto the wafer 11. The vertical distance between the outlet of the gas output pipe 156 and the center of the wafer 11 is, for example, 130mm-150mm.

[0040] Please see Figures 1 to 2 As shown, in one embodiment of this utility model, the guide rail link valve 154 is movably connected to the first guide rail 152 and the second guide rail 153, allowing the second guide rail 153 to move up and down relative to the first guide rail 152. Specifically, by setting the guide rail link valve 154, while the second guide rail 153 moves up and down on the first guide rail 152, it drives the gas transmission pipe 155 to move up and down, so that the gas transmission pipe 155 can be connected to the air inlet channel 151 at different positions in sequence. This facilitates the adjustment of the height of the second guide rail 153, the gas transmission pipe 155, and the gas output pipe 156, allowing the distance between the outlet of the gas output pipe 156 and the wafer 11 to be adjusted. This adjusts the diffusion range of the gas output from the gas output pipe 156 on the wafer 11, achieving the purpose of homogenizing the gas distribution at different positions on the wafer 11.

[0041] Please see Figures 1 to 2As shown, in one embodiment of this utility model, a switching valve 157 is disposed between a gas transmission pipeline 155 and a gas output pipeline 156 to control the smooth transmission of gas between the gas transmission pipeline 155 and the gas output pipeline 156. The switching valve 157 may be, for example, a ball valve, a butterfly valve, a gate valve, a diaphragm valve, or a plug valve.

[0042] Please see Figures 1 to 2 As shown, in one embodiment of this utility model, the controller 158 is disposed on the gas output pipe 156. Specifically, the controller 158 can detect and control the flow rate of the gas transmitted in the gas output pipe 156 to adjust the flow rate of the gas injected by the gas injection structure 15 onto the wafer 11. The controller 158 may be, for example, a flow control valve.

[0043] Please see Figures 1 to 2 As shown, in one embodiment of this utility model, the steering wheel 159 is disposed on the gas output pipe 156 on the side of the controller 158 away from the switching valve 157. By disposing of the steering wheel 159, the angle between the gas output pipe 156 and the gas transmission pipe 155 can be changed at will, so that the outlet of the gas output pipe 156 can be directed toward different positions of the wafer 11, thereby facilitating the gas injection structure 15 to deliver gas to various positions of the wafer 11 and improving the flexibility of the gas injection structure 15.

[0044] Please see Figures 1 to 2 As shown, in one embodiment of this utility model, an ion generator 1510 is also provided on the gas output pipe 156 on the side of the steering wheel 159 away from the controller 158. By providing the ion generator 1510, the gas in the gas output pipe 156 is converted into plasma, and the plasma is transported from the outlet of the gas output pipe 156 to the wafer 11 to perform plasma etching on the wafer 11.

[0045] In summary, this invention provides a gas distribution device that, through a gas injection structure, replenishes gas to the edge of a wafer, thereby improving the gas distribution at the wafer center and edge, ensuring uniform gas distribution on the wafer, and thus improving the quality of etching or deposition processes and increasing the yield of semiconductor products. Furthermore, the gas distribution device provided by this invention, by setting a first guide rail and a second guide rail, changes the vertical distance between the gas injection structure and the wafer, as well as the specific position of the gas ejected from the gas injection structure on the wafer surface. This allows operators to replenish gas to different positions on the wafer according to the actual situation of the etching or deposition process, further improving the uniformity of gas distribution on the wafer, and thus further improving the quality of etching or deposition processes.

[0046] The embodiments of this utility model disclosed above are merely illustrative of the present utility model. The embodiments do not exhaustively describe all details, nor do they limit the utility model to the specific implementations described. Obviously, many modifications and variations can be made based on the content of this specification. This specification selects and specifically describes these embodiments to better explain the principles and practical applications of this utility model, thereby enabling those skilled in the art to better understand and utilize it. This utility model is limited only by the claims and their full scope and equivalents.

Claims

1. A gas distribution device, characterized in that, At least including: A cavity for holding a wafer; At least one gas spraying component is disposed at intervals on the wafer; A gas input pipe is connected to the side of the gas spraying component away from the wafer; and Multiple gas injection structures are arranged around the side wall of the cavity, and each gas injection structure includes a first guide rail, a second guide rail, a gas transmission pipe, and a gas output pipe. The first guide rail is arranged perpendicular to the plane where the wafer is located on the inner wall of the cavity, the second guide rail is arranged perpendicular to the first guide rail, the gas transmission pipe is arranged along the second guide rail, and the gas output pipe is connected to the end of the gas transmission pipe away from the first guide rail.

2. The gas distribution device according to claim 1, characterized in that, The gas injection structure also includes multiple air intake channels, which are spaced apart along the first guide rail on the side wall of the cavity, and each air intake channel extends in the direction of the first guide rail and passes through the first guide rail.

3. The gas distribution device according to claim 2, characterized in that, The gas transmission pipe is positioned with one end away from the first guide rail aligned with the second guide rail, and the other end extends in the direction of the first guide rail and is connected to one of the air intake channels.

4. The gas distribution device according to claim 1, characterized in that, The gas injection structure also includes a guide rail link valve, which is movably connected to the first guide rail and the second guide rail.

5. The gas distribution device according to claim 1, characterized in that, The second guide rail is a telescopic guide rail, and the gas transmission pipeline is a flexible pipeline.

6. The gas distribution device according to claim 5, characterized in that, The second guide rail and the gas transmission pipe are fixedly connected.

7. The gas distribution device according to claim 1, characterized in that, The gas injection structure also includes a switching valve, which is disposed between the second guide rail and the gas output pipe.

8. The gas distribution device according to claim 7, characterized in that, The gas injection structure also includes a controller, which is disposed on the gas output pipe.

9. The gas distribution device according to claim 8, characterized in that, The gas injection structure also includes a steering wheel, which is disposed on the gas output pipe on the side of the controller away from the switching valve.

10. The gas distribution device according to claim 9, characterized in that, The gas injection structure also includes an ion generator, which is disposed on the gas output pipe on the side of the steering wheel away from the controller.

Images