Bi-directional temperature compensated biasing circuit and attenuator with bi-directional temperature compensation

Abstract

The utility model discloses a two -way temperature compensation bias circuit and has two -way temperature compensation's attenuator relates to radio frequency attenuator field, bias circuit includes: first temperature compensation passage, one end of first temperature compensation passage is connected to voltage source, and the other end is grounded, is used for providing the first partial voltage of positive correlation with temperature, second temperature compensation passage, second temperature compensation passage is parallelly connected between voltage source and ground with first temperature compensation passage, is used for providing the second partial voltage of inverse correlation with temperature. The scheme contains two parallel temperature compensation passage's bias circuit, can stably produce two bias voltage with high precision complementary characteristics from one voltage source. The design fundamentally solves the technical problem that the traditional single compensation scheme cannot carry out two -way, coordinated compensation, makes compensation range wider, linearity better, higher precision.

Description

Technical Field

[0001] This utility model relates to the field of radio frequency attenuators, specifically to a bidirectional temperature-compensated bias circuit and an attenuator with bidirectional temperature compensation. Background Technology

[0002] Attenuators, as a key component in radio frequency systems, precisely adjust signal strength to ensure stable operation under various conditions. Temperature-compensated attenuators, which automatically adjust attenuation according to changes in ambient temperature, are widely used in satellite communications, broadcasting, electronic warfare (EW) systems, and high-frequency amplifiers.

[0003] However, existing temperature-compensated attenuators often rely on the temperature characteristics of a single type of component. A common approach is to use a resistor with a specific temperature coefficient (such as a thermistor) or utilize the negative temperature coefficient voltage characteristic of a single diode to generate a compensating bias voltage. This bias voltage is applied to the gate of a field-effect transistor (FET) in the attenuator, and the temperature drift of the attenuation is compensated by adjusting the channel resistance of the FET.

[0004] However, this type of traditional solution has the following drawbacks, resulting in insufficient temperature compensation accuracy of existing attenuators:

[0005] The compensation capability is limited. The compensation voltage provided by a single temperature-sensitive element has a fixed temperature change curve (slope) and is often non-linear. This causes its compensation effect to drop sharply at extreme high or low temperatures, making it impossible to achieve accurate attenuation flatness over the entire temperature range, resulting in signal strength fluctuations with temperature.

[0006] The compensation direction is singular; traditional single compensation voltage can only adjust the circuit in one direction. Utility Model Content

[0007] The purpose of this invention is to improve the temperature compensation accuracy of attenuators.

[0008] To achieve the above objectives, this utility model provides a bidirectional temperature-compensated bias circuit, the bias circuit comprising:

[0009] The first temperature compensation path has one end connected to a voltage source and the other end grounded, and is used to provide a first voltage divider that is positively correlated with temperature.

[0010] The second temperature compensation path is connected in parallel with the first temperature compensation path between the voltage source and ground, and is used to provide a second voltage divider that is inversely related to temperature.

[0011] The principle of this scheme lies in using two compensation paths to generate two voltage dividers with opposite temperature-dependent characteristics from a single voltage source: the first voltage divider is positively correlated with temperature (i.e., the voltage increases as temperature rises); the second voltage divider is negatively correlated with temperature (i.e., the voltage decreases as temperature rises). Therefore, this scheme can accurately cancel temperature drift in both positive and negative directions. The compensation effect is the superposition of the voltage changes from the two paths. By independently setting the slope and amplitude of the positive and negative temperature correlation coefficients, the synthesized compensation voltage can cover a wider temperature range. Simultaneously, the first and second voltage dividers can produce a complementary effect, making the final voltage synthesis result used for compensation more closely resemble a straight line across the entire temperature range. This achieves linear control of the compensated circuit and effectively improves compensation accuracy.

[0012] Furthermore, in the first temperature compensation path, a first temperature diode group and a first resistor group are connected in series in the direction from the voltage source to ground, and a first voltage divider terminal is led out on the path between the first temperature diode group and the first resistor group. The first voltage divider terminal is used to provide the first voltage divider voltage.

[0013] In the second temperature compensation path, a second resistor group and a second temperature diode group are connected in series from the voltage source to ground. A second voltage divider terminal is led out from the path between the second resistor group and the second temperature diode group. The second voltage divider terminal is used to provide the second voltage divider voltage.

[0014] This scheme achieves the generation of two voltages with different temperature characteristics from the same power source by setting the connection order of the resistor group and diode group. Specifically, in the first temperature compensation path, the current first passes through the temperature diode group with a negative temperature coefficient, and then through the resistor group. Since the forward voltage drop of the diode decreases with increasing temperature, its proportion in the total voltage drop decreases, resulting in the first voltage divider voltage drawn from the connection point exhibiting a positive temperature coefficient. Correspondingly, in the second temperature compensation path, the resistor group is placed before the temperature diode group, and the current passes through the resistor group first. Therefore, the second voltage divider voltage drawn from the connection point mainly exhibits the negative temperature characteristic of the diode voltage drop.

[0015] Furthermore, the first temperature diode group includes one or at least two first temperature diodes connected in series, and the first resistor group includes one or at least two first resistors connected in series.

[0016] The second temperature diode group includes one or at least two second temperature diodes connected in series, and the second resistor group includes one or at least two second resistors connected in series.

[0017] In this design, each temperature diode group can consist of one or more temperature diodes connected in series, and each resistor group can consist of one or more resistors connected in series. By increasing the number of temperature diodes connected in series, the reference voltage at the voltage divider point can be raised or lowered, and its sensitivity to temperature can be changed; similarly, by increasing the number of series resistors, the current in the path and the voltage division ratio can be adjusted. This configuration allows for the adjustment of voltage parameters by increasing or decreasing the number of the same components.

[0018] Furthermore, a first regulating resistor is connected in series between the first temperature diode group and the first resistor group, and a first voltage divider terminal is led out from the connection path between the first regulating resistor and the first resistor group.

[0019] And / or, a second regulating resistor is connected in series between the second temperature diode group and the second resistor group, and a second voltage divider terminal is led out on the connection path between the second regulating resistor and the second resistor group.

[0020] By setting the resistance values ​​of the first and second adjusting resistors, precise fine-tuning of the first and second voltage dividers can be achieved, thereby improving the accuracy of temperature compensation.

[0021] This utility model also provides a bidirectional temperature-compensated attenuator, including the bidirectional temperature-compensated bias circuit described above.

[0022] And an attenuator circuit, which includes at least one series branch and at least one parallel branch, wherein the series branch is connected between the attenuator RF input terminal and the RF output terminal and contains at least one transistor; one end of the parallel branch is connected to the series branch and the other end is grounded, and it contains at least one transistor.

[0023] The transistor gate of the series branch is connected to the first voltage divider terminal of the bidirectional temperature compensation bias circuit; the transistor gate of the parallel branch is connected to the second voltage divider terminal of the bidirectional temperature compensation bias circuit.

[0024] The principle of this attenuator lies in using a first voltage divider with a positive temperature coefficient to control the transistors in the series branch, and a second voltage divider with a negative temperature coefficient to control the transistors in the parallel branch. When the temperature changes, the two voltages change in opposite directions, automatically adjusting the equivalent resistance of the transistors in the series and parallel branches, so that their changing trends compensate for each other, thereby offsetting the attenuation drift caused by temperature changes and achieving stable attenuation characteristics.

[0025] Furthermore, the attenuator includes a Π-type, a T-type, or a bridge-T-type.

[0026] Furthermore, the attenuator is Π-type, including a first series branch, the first series branch containing one or more transistors, and one or more resistors connected in series or in parallel with the transistors of the first series branch.

[0027] The attenuator also includes two parallel branches, namely a first parallel branch and a second parallel branch, wherein the first parallel branch includes one or more transistors and the second parallel branch includes one or more transistors.

[0028] In this case, using multiple transistors stacked in each branch can distribute the RF voltage, thereby increasing the overall power capacity.

[0029] Furthermore, the attenuator is T-shaped and includes a second series branch, which contains one or more transistors;

[0030] It also includes a first resistor branch, which includes at least two resistors, and the first resistor branch is connected in parallel with the second series branch;

[0031] It also includes a first T-type parallel branch, which contains at least one transistor. One end of the first T-type parallel branch is connected between the resistors of the resistor branch, and the other end is grounded.

[0032] Furthermore, the attenuator is a bridge T-type, including a third series branch, which contains one or more transistors;

[0033] It also includes a second resistor branch, which includes at least two resistors, and the second resistor branch is connected in parallel with the third series branch;

[0034] It also includes a bridging branch, which includes at least one resistor, and the bridging branch is connected in parallel with the third series branch;

[0035] It also includes a second T-type parallel branch, which contains at least one transistor. One end of the second T-type parallel branch is connected between the resistors of the second resistor branch, and the other end is grounded.

[0036] Furthermore, the bidirectional temperature compensation bias circuit also includes a positive voltage divider path, which is used to provide a positive voltage VC to the drain and source of the transistor in the attenuator through the third voltage divider terminal. A DC blocking capacitor is connected in series near the ground terminal in the parallel branch. One end of the DC blocking capacitor has a DC voltage grounded, and the other end has a DC voltage of positive voltage VC.

[0037] The positive voltage divider path provides an independent positive voltage, thus ensuring better compatibility with modern chip manufacturing processes. The DC blocking capacitor Cb presents high impedance to DC, thus not affecting the DC bias point of the transistor; however, it presents low impedance to RF signals, ensuring that the parallel branch can function effectively at RF frequencies and optimizing the high-frequency performance of the attenuator.

[0038] Furthermore, isolation resistors Rt are provided between the transistor in the series branch and the first voltage divider terminal of the bidirectional temperature compensation bias circuit, and between the transistor in the parallel branch and the second voltage divider terminal of the bidirectional temperature compensation bias circuit, for isolating the radio frequency and DC components.

[0039] Among them, the isolation resistor can effectively block radio frequency signals from entering the sensitive DC bias circuit, ensuring that the bias voltage is stable and not affected by radio frequency interference, thus guaranteeing the reliability and linearity of the attenuator under high power.

[0040] One or more technical solutions provided by this utility model have at least the following technical effects or advantages:

[0041] This bidirectional temperature compensation bias circuit comprises two parallel temperature compensation paths, capable of stably generating two bias voltages with high-precision complementary characteristics from a single voltage source. It fundamentally solves the technical challenge of traditional single-compensation schemes being unable to achieve bidirectional, coordinated compensation. Specifically, this scheme can accurately cancel temperature drift in both positive and negative directions. The compensation effect is the superposition of the output voltage changes of the two paths. By independently setting the slope and amplitude of the positive and negative temperature correlation coefficients, the synthesized compensation voltage can cover a wider temperature range. Simultaneously, the first and second voltage dividers can produce a complementary effect, making the final voltage synthesis result used for compensation more closely approximate a straight line across the entire temperature range. This achieves linear control of the compensated circuit and effectively improves compensation accuracy. Attached Figure Description

[0042] The accompanying drawings, which are provided to further illustrate the embodiments of the present invention and constitute a part of the present invention, do not constitute a limitation thereof.

[0043] Figure 1 This is one of the structural schematic diagrams of a bidirectional temperature compensation bias circuit in this utility model;

[0044] Figure 2 This is the second schematic diagram of a bidirectional temperature compensation bias circuit in this utility model;

[0045] Figure 3This is a graph showing the change of the voltage values ​​at the first and second voltage dividers of a bidirectional temperature-compensated bias circuit as a function of temperature.

[0046] Figure 4 This is one of the structural schematic diagrams of a π-type attenuator with bidirectional temperature compensation according to this utility model;

[0047] Figure 5 This is the second schematic diagram of a π-type attenuator with bidirectional temperature compensation in this utility model;

[0048] Figure 6 This is a schematic diagram of a T-type attenuator with bidirectional temperature compensation according to the present invention.

[0049] Figure 7 This is a schematic diagram of a bridge T-type attenuator with bidirectional temperature compensation according to the present invention. Detailed Implementation

[0050] To better understand the above-mentioned objectives, features, and advantages of this utility model, the present utility model will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that, where there is no conflict, the embodiments of this utility model and the features thereof can be combined with each other.

[0051] Many specific details are set forth in the following description in order to provide a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Therefore, the scope of protection of the present invention is not limited to the specific embodiments disclosed below.

[0052] Example 1

[0053] Please refer to Figure 1 Embodiment 1 of this utility model provides a bidirectional temperature compensation bias circuit, the bias circuit comprising:

[0054] The first temperature compensation path has one end connected to the voltage source VDD and the other end grounded, and is used to provide a first voltage divider that is positively correlated with temperature.

[0055] The second temperature compensation path is connected in parallel with the first temperature compensation path between the voltage source VDD and ground, and is used to provide a second voltage divider that is inversely related to temperature.

[0056] In the first temperature compensation path, a first temperature diode group and a first resistor group are connected in series from the voltage source VDD to ground. A first voltage divider terminal VA is led out from the connection path of the first temperature diode group and the first resistor group. The first voltage divider terminal VA is used to provide the first voltage divider voltage.

[0057] In the second temperature compensation path, a second resistor group and a second temperature diode group are connected in series from the voltage source VDD to ground. A second voltage divider terminal VB is led out from the connection path of the second resistor group and the second temperature diode group. The second voltage divider terminal VB is used to provide the second voltage divider voltage.

[0058] Wherein, the first temperature diode group includes at least one first temperature diode, and the first resistor group includes at least one first resistor Ra;

[0059] The second temperature diode group includes at least one second temperature diode, and the first resistor group includes at least one second resistor Rb.

[0060] In some preferred embodiments, the first temperature diode group includes at least two first temperature diodes connected in series, and the first resistor group includes at least two first resistors Ra connected in series. Figure 1 (Only one is shown in the text)

[0061] The second temperature diode group includes at least two second temperature diodes connected in series, and the second resistor group includes at least two second resistors Rb connected in series. Figure 1 Only one is shown in the image.

[0062] In this embodiment, in order to obtain a suitable voltage division, the number of the first temperature diode and the second temperature diode, as well as the number and resistance value of the first resistor Ra and the second resistor Rb, can be set according to the required temperature compensation range, so as to adjust the voltage range of the first voltage divider terminal voltage and the second voltage divider terminal voltage.

[0063] Preferably, to obtain a better temperature characteristic curve, the first resistor Ra and the second resistor Rb are selected as resistors with a positive temperature coefficient. When the temperature is higher, the resistance values ​​of Ra and Rb are larger, and the forward voltage drop of the temperature diode will decrease when the temperature rises. The combination of the two can make the first voltage divider and the second voltage divider have a greater range of temperature-dependent characteristics.

[0064] In some preferred embodiments, such as Figure 2 As shown, in order to achieve more precise adjustment, a first regulating resistor Ra' is connected in series between the first temperature diode group and the first resistor group, and a first voltage divider terminal VA is led out on the connection path between the first regulating resistor Ra' and the first resistor group.

[0065] A second regulating resistor Rb' is connected in series between the second temperature diode group and the second resistor group, and a second voltage divider terminal VB is led out from the connection path between the second regulating resistor Rb' and the second resistor group;

[0066] Among them, the first regulating resistor Ra' and the second regulating resistor Rb' have lower resistance values ​​and are basically unaffected by temperature, which can realize fine adjustment of the first voltage divider and the second voltage divider.

[0067] Optionally, the first regulating resistor Ra' and the second regulating resistor Rb' can be composed of one or more resistors.

[0068] Optionally, the bias circuit further includes a positive voltage divider path, which is used to provide a positive voltage through the third voltage divider terminal VC. The specific structure of the positive voltage divider path is prior art in this field, such as... Figure 2 As shown, in this embodiment, the positive voltage divider path is composed of two resistors connected in series. One end of the resistor is connected to the voltage source VDD, and the other end is grounded. The connection node of the two resistors is the third voltage divider terminal VC.

[0069] Figure 3 This is a characteristic curve of the first voltage divider and the second voltage divider as a function of temperature in the temperature compensation bias circuit provided in this embodiment. Figure 3 In the diagram, the horizontal axis represents temperature, and the vertical axis represents voltage. The red curve represents the first voltage divider, and the blue curve represents the second voltage divider. Figure 3 It is known that within the temperature range of -60℃ to 140℃, the voltage value of the first voltage divider increases monotonically with increasing temperature, while the voltage value of the second voltage divider decreases monotonically with increasing temperature. The two curves intersect at approximately 20℃, with a voltage value of approximately 1.8V. Throughout the entire operating temperature range, the trends of the first and second voltage dividers are always opposite, and they maintain good linearity and voltage spacing throughout the entire range.

[0070] Figure 3 The beneficial effects of this invention have been verified: two bias voltages with high-precision complementary temperature characteristics are generated by a single voltage source. This symmetrical and opposite voltage change relationship provides a prerequisite for subsequent circuits to achieve accurate temperature compensation and ensures the stability of the compensated circuit parameters across the entire temperature range. Figure 3 The linearity of the curve also indicates the smoothness and predictability of the compensation.

[0071] Example 2

[0072] Based on Example 1, please refer to Figure 4Embodiment 2 of this utility model provides a bidirectional temperature-compensated attenuator, including the bidirectional temperature-compensated bias circuit as described in Embodiment 1.

[0073] And an attenuator circuit, which includes at least one series branch and two parallel branches. The series branch is connected between the attenuator RF input terminal RFin and the RF output terminal RFout. It includes a transistor M1. The gate of M1 is connected to the first voltage divider terminal VA through an isolation resistor Rt. The source of M1 is connected to the RF input terminal RFin. The drain of M1 is connected to the RF output terminal RFout.

[0074] One end of each of the two parallel branches is connected to the series branch, and the other end is grounded. Each of the two parallel branches contains a transistor, namely M2 and M3. The gate of M2 is connected to the second voltage divider terminal VB through the isolation resistor Rt. The source of M2 is connected to the RF input terminal RFin through the resistor R2. The drain of M2 is grounded. The gate of M3 is connected to the second voltage divider terminal VB through the isolation resistor Rt. The drain of M3 is connected to the RF output terminal RFout through the resistor R3. The source of M3 is grounded.

[0075] Figure 4 In a preferred embodiment, the attenuator further includes a negative feedback resistor R1, which is connected in parallel with the first series branch between the RF input terminal RFin and the RF output terminal RFout. R1 is used to introduce negative feedback to improve the linearity of the amplifier and stabilize its DC operating point.

[0076] Example 3

[0077] Based on Example 2, please refer to Figure 5 This embodiment provides a bidirectional temperature-compensated attenuator, which is Π-type and includes a first series branch. The first series branch includes a first transistor M4 and a second transistor M41. The gates of M4 and M41 are respectively connected to the first voltage divider terminal VA through an isolation resistor Rt. The source of M4 is connected to the RF input terminal RFin through a resistor RS. The drain of M4 is connected to the source of M41. The drain of M41 is connected to the RF output terminal RFout through a resistor RS.

[0078] The attenuator further includes two parallel branches: a first parallel branch and a second parallel branch. The first parallel branch includes a third transistor M5 and a fourth transistor M51. The gates of M5 and M51 are connected to the second voltage divider terminal VB through an isolation resistor Rt. The source of M5 is connected to the RF input terminal RFin through a resistor R4. The drain of M5 is connected to the source of M51, and the drain of M51 is grounded. The second parallel branch includes a fifth transistor M6 and a sixth transistor M61. The gates of M6 and M61 are connected to the second voltage divider terminal VB through an isolation resistor Rt. The drain of M6 is connected to the RF output terminal RFout through a resistor R5. The source of M6 is connected to the drain of M61, and the source of M61 is grounded.

[0079] Among them, the isolation resistor Rt is used to isolate the radio frequency and DC components, the resistor RS is used for impedance matching and signal isolation, and the resistors R4 and R5 are used to adjust the signal level and impedance matching.

[0080] Example 4

[0081] Please refer to Figure 6 Based on Embodiment 2, the attenuator is T-shaped and includes a second series branch. The second series branch includes a seventh transistor M7. The source of M7 is connected to the RF input terminal RFin, the gate of M7 is connected to the first voltage divider terminal VA through the isolation resistor Rt, and the drain of M7 is connected to the RF output terminal RFout.

[0082] It also includes a first resistor branch, which includes resistors R6 and R7 connected in series. The first resistor branch is connected in parallel with the second series branch, wherein R6 is connected to the RF input terminal RFin and R7 is connected to the RF output terminal RFout.

[0083] It also includes a first T-type parallel branch, which contains an eighth transistor M8. The gate of M8 is connected to the second voltage divider terminal VB through an isolation resistor Rt. The drain of M8 is connected to the connection node of resistors R6 and R7 through resistor R8. The source of M8 is grounded.

[0084] One end of the first T-type parallel branch is connected between resistors R6 and R7, and the other end is grounded.

[0085] Example 5

[0086] Please refer to Figure 7 Based on Embodiment 2, the attenuator is a bridge T-type, including a third series branch. The third series branch includes a transistor M9. The source of M9 is connected to the RF input terminal RFin, the gate of M9 is connected to the first voltage divider terminal VA through the isolation resistor Rt, and the drain is connected to the RF output terminal RFout.

[0087] It also includes a second resistor branch, which contains resistors R9 and R10 connected in series. The second resistor branch is connected in parallel with the third series branch, wherein R9 is connected to the RF input terminal RFin and R10 is connected to the RF output terminal RFout.

[0088] It also includes a bridging branch, which includes a resistor R11, and the bridging branch is connected in parallel with the third series branch;

[0089] It also includes a second T-type parallel branch, which contains a transistor M10. The gate of M10 is connected to the second voltage divider terminal VB through an isolation resistor Rt. The drain of M10 is connected to the connection node of resistors R9 and R10 through a resistor R12. The source of M10 is grounded.

[0090] Example 6

[0091] Since existing attenuators operate under negative voltage, such as switching transistors which are typically cut off when a -5V voltage is applied and turned on when a 0V voltage is applied, providing negative voltage would cause great inconvenience to the actual use of the chip.

[0092] Therefore, this embodiment provides an all-positive-voltage controlled attenuator, which raises the operating voltage of the attenuator to a positive voltage by connecting the source and / or drain of any transistor of the attenuator to a positive voltage.

[0093] To achieve the above objectives, it is first required to install a DC blocking capacitor in the parallel branch, and the attenuator circuit section above the DC blocking capacitor must be connected to a positive voltage. In this case, the presence of the DC blocking capacitor ensures that all transistors in the attenuator circuit operate under a positive voltage. Typically, a DC blocking capacitor is placed at the output of the series branch or externally on the output to eliminate the influence of low voltage from external circuits.

[0094] For ease of understanding, such as Figure 5 As shown, the first parallel branch and the second parallel branch each have a DC blocking capacitor Cb connected in series near the ground terminal. The two DC blocking capacitors Cb are connected to the drains of M51 and M61, respectively. Since the DC blocking capacitors can isolate the influence of the ground voltage, it can ensure that the transistors above the DC blocking capacitors operate at a positive voltage. Figure 5 In a specific implementation, based on Embodiment 3, the connection path between the first transistor M4 and the second transistor M41 is connected to a positive voltage via a resistor Rt.

[0095] In some preferred embodiments, the positive voltage is provided by the third voltage divider terminal VC of the temperature-compensated bias circuit.

[0096] In some preferred embodiments, the third voltage divider terminal VC provides a positive voltage of VDD / 2.

[0097] This makes Figure 5 The source and drain DC points of all transistors operate at a positive voltage, rather than grounded at 0V.

[0098] Although preferred embodiments of the present invention have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of the present invention.

[0099] Obviously, those skilled in the art can make various modifications and variations to this utility model without departing from its spirit and scope. Therefore, if these modifications and variations fall within the scope of the claims of this utility model and their equivalents, this utility model also intends to include these modifications and variations.

Claims

1. A bidirectional temperature-compensated bias circuit, characterized in that, The bias circuit includes: The first temperature compensation path has one end connected to a voltage source and the other end grounded, and is used to provide a first voltage divider that is positively correlated with temperature. The second temperature compensation path is connected in parallel with the first temperature compensation path between the voltage source and ground, and is used to provide a second voltage divider that is inversely related to temperature.

2. The bidirectional temperature compensation bias circuit according to claim 1, characterized in that, In the first temperature compensation path, a first temperature diode group and a first resistor group are connected in series from the voltage source to ground. A first voltage divider terminal is led out from the path between the first temperature diode group and the first resistor group. The first voltage divider terminal is used to provide the first voltage divider voltage. In the second temperature compensation path, a second resistor group and a second temperature diode group are connected in series from the voltage source to ground. A second voltage divider terminal is led out from the path between the second resistor group and the second temperature diode group. The second voltage divider terminal is used to provide the second voltage divider voltage.

3. The bidirectional temperature compensation bias circuit according to claim 2, characterized in that, The first temperature diode group includes one or at least two first temperature diodes connected in series, and the first resistor group includes one or at least two first resistors connected in series. The second temperature diode group includes one or at least two second temperature diodes connected in series, and the second resistor group includes one or at least two second resistors connected in series.

4. The bidirectional temperature compensation bias circuit according to claim 2, characterized in that, A first regulating resistor is connected in series between the first temperature diode group and the first resistor group, and a first voltage divider terminal is led out from the connection path between the first regulating resistor and the first resistor group. And / or, a second regulating resistor is connected in series between the second temperature diode group and the second resistor group, and a second voltage divider terminal is led out on the connection path between the second regulating resistor and the second resistor group.

5. A bidirectional temperature-compensated attenuator, characterized in that, Includes the bidirectional temperature compensation bias circuit as described in any one of claims 1 to 4; And an attenuator circuit, which includes at least one series branch and at least one parallel branch, wherein the series branch is connected between the attenuator RF input terminal and the RF output terminal and contains at least one transistor; one end of the parallel branch is connected to the series branch and the other end is grounded, and it contains at least one transistor. The transistor gate of the series branch is connected to the first voltage divider terminal of the bidirectional temperature compensation bias circuit; the transistor gate of the parallel branch is connected to the second voltage divider terminal of the bidirectional temperature compensation bias circuit.

6. The attenuator with bidirectional temperature compensation according to claim 5, characterized in that, The attenuator includes a Π type, a T type, or a bridge T type.

7. The attenuator with bidirectional temperature compensation according to claim 6, characterized in that, The attenuator is of type Π and includes a first series branch. The first series branch contains one or more transistors, and one or more resistors are connected in series or in parallel with the transistors of the first series branch. The attenuator also includes two parallel branches, namely a first parallel branch and a second parallel branch, wherein the first parallel branch includes one or more transistors and the second parallel branch includes one or more transistors.

8. The attenuator with bidirectional temperature compensation according to claim 6, characterized in that, The attenuator is T-type and includes a second series branch, which contains one or more transistors; It also includes a first resistor branch, which includes at least two resistors, and the first resistor branch is connected in parallel with the second series branch; It also includes a first T-type parallel branch, which contains at least one transistor. One end of the first T-type parallel branch is connected between the resistors of the resistor branch, and the other end is grounded.

9. The attenuator with bidirectional temperature compensation according to claim 6, characterized in that, The attenuator is a bridge T-type, including a third series branch, which contains one or more transistors; It also includes a second resistor branch, which includes at least two resistors, and the second resistor branch is connected in parallel with the third series branch; It also includes a bridging branch, which includes at least one resistor, and the bridging branch is connected in parallel with the third series branch; It also includes a second T-type parallel branch, which contains at least one transistor. One end of the second T-type parallel branch is connected between the resistors of the second resistor branch, and the other end is grounded.

10. A bidirectional temperature-compensated attenuator according to claim 5, characterized in that, The bidirectional temperature compensation bias circuit also includes a positive voltage divider path, which is used to provide a positive voltage VC to the drain and source of the transistor in the attenuator through the third voltage divider terminal. A DC blocking capacitor is connected in series near the ground terminal in the parallel branch. One end of the DC blocking capacitor is grounded and the other end is a positive voltage VC.

11. The attenuator with bidirectional temperature compensation according to claim 5, characterized in that, An isolation resistor Rt is provided between the transistor in the series branch and the first voltage divider terminal of the bidirectional temperature compensation bias circuit, and between the transistor in the parallel branch and the second voltage divider terminal of the bidirectional temperature compensation bias circuit, for isolating the radio frequency and DC components.

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