Electrostatic eliminator

Abstract

The application provides an electrostatic elimination device, relates to the polysilicon technical field, and comprises an ion generation unit, a wind curtain generation unit and a control unit.The ion generation unit is arranged above a silicon material transmission path and is used for releasing an ion flow; the wind curtain generation unit is arranged above the silicon material transmission path and is used for generating a wind curtain; the included angle between the wind curtain and the silicon material movement direction is 30 degrees; an electrostatic monitoring unit is arranged above or on the side of the silicon material transmission path and is used for monitoring the electrostatic potential of the silicon material surface in real time; the output end of the electrostatic monitoring unit is in communication connection with the input end of the control unit; and the output end of the control unit is in communication connection with the control end of the ion generation unit and the wind curtain generation unit. The ion flow released by the ion generation unit forms an ionization area, can neutralize the electrostatic charge on the silicon material surface, eliminates the adsorption force of the silicon material on impurities, reduces impurity adsorption and metal pollution from the root. On this basis, the use amount of compressed air is also reduced.

Description

Technical Field

[0001] This utility model relates to the field of polycrystalline silicon technology, and in particular to an electrostatic elimination device. Background Technology

[0002] During the polysilicon production process, silicon ingots and other silicon materials are prone to static electricity buildup due to friction or environmental factors during crushing, conveying, and sorting. This static electricity attracts impurities such as dust and metal particles from the air, causing contamination of the silicon surface, which directly affects the purity and electrical properties of subsequent crystal growth.

[0003] Currently, most methods for removing and controlling impurities on the surface of silicon materials employ instrument air purging and strong magnetic adsorption. However, these traditional methods have the following drawbacks:

[0004] 1. Instrument air purging requires a large amount of compressed air, resulting in high instrument gas consumption and high operating costs. In addition, when using instrument air purging (pressure 0.4MPa), the airflow disturbance will actually exacerbate the flying and diffusion of silicon powder, causing the metal content on the surface of silicon material to increase instead of decrease (metal contamination actually increases by 15%).

[0005] 2. The structure of the strong magnetic adsorption device is complicated, resulting in a complex system, difficult maintenance, and high personnel operating costs.

[0006] 3. Traditional methods do not specifically eliminate static electricity, and the problem of impurity adsorption persists, making product quality control difficult and unable to effectively improve product quality (when using the above traditional methods in crushing, conveying, and sorting processes, the metal content on the surface of silicon material reaches 0.8-1.2 ppb). Utility Model Content

[0007] In view of the above, the present invention provides a static electricity elimination device, which aims to solve at least one of the defects of the conventional methods mentioned in the background art.

[0008] To achieve the above objectives, this utility model provides the following technical solution:

[0009] This utility model provides a static electricity elimination device, comprising:

[0010] An ion generating unit is arranged above the silicon transport path to release an ion flow;

[0011] An air curtain generating unit is arranged above the silicon material transport path to generate an air curtain, wherein the angle between the air curtain and the direction of silicon material movement is 30°.

[0012] An electrostatic monitoring unit is installed above or to the side of the silicon material transport path to monitor the electrostatic potential of the silicon material surface in real time. The output of the electrostatic monitoring unit is communicatively connected to the input of the control unit.

[0013] The control unit has its output terminal communicatively connected to the control terminals of the ion generating unit and the air curtain generating unit.

[0014] In some embodiments of this invention, the power of the ion generating unit is adjustable; the control unit is configured to:

[0015] When the detection data of the electrostatic monitoring unit is greater than the first preset threshold, the ion generating unit is activated;

[0016] When the detection data of the electrostatic monitoring unit is greater than the second preset threshold, the power of the ion generating unit is increased and the air curtain generating unit is activated; the second preset threshold is greater than the first preset threshold.

[0017] In some embodiments of this invention, the width of the air curtain is greater than or equal to the width of the silicon material transport path.

[0018] In some embodiments of this utility model, the air curtain generating unit includes:

[0019] A distribution container is connected to an air inlet, which is connected to an air inlet valve. One side of the distribution container faces the silicon material transport path and has an air outlet.

[0020] An air ring, connected to the air outlet, has one side facing the silicon material transport path and has an air outlet.

[0021] In some embodiments of this utility model, the inner diameter of the air outlet gradually decreases along the axial direction of the air outlet.

[0022] In some embodiments of this utility model, the air ring has wedge-shaped blocks, and a plurality of the wedge-shaped blocks are arranged at circumferential intervals along the air outlet.

[0023] In some embodiments of this invention, the ion generating unit includes an electrostatic ion bar.

[0024] In some embodiments of this utility model, the ion generating unit and the air curtain generating unit are integrated into one unit.

[0025] In some embodiments of this utility model, the electrostatic ion bar is located inside the gas outlet.

[0026] In some embodiments of this utility model, a silicon material detection unit is also included, which is used to detect whether there is silicon material on the silicon material transport path and to feed back the detection result to the control unit.

[0027] The embodiments of this utility model have at least the following advantages or beneficial effects:

[0028] 1. The ion stream released by the ion generating unit forms an ionization zone, which can neutralize the electrostatic charge on the surface of the silicon material, thereby eliminating the adsorption force of the silicon material on impurities and reducing impurity adsorption and metal contamination at the source. Based on this, the amount of compressed air used is also reduced.

[0029] 2. The air curtain generated by the air curtain generating unit forms a 30° angle with the direction of silicon material movement. This angle design can minimize the flying of silicon powder and prevent secondary pollution caused by airflow disturbance.

[0030] 3. Without using a strong magnetic adsorption device, there is no such problem.

[0031] Other features and advantages of this invention will be set forth in the following description. Attached Figure Description

[0032] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0033] Figure 1 This is a schematic diagram of the electrostatic eliminator and the silicon material transport path (conveyor belt);

[0034] Figure 2 This is a schematic diagram of the air curtain generating unit;

[0035] Figure 3 for Figure 2 A magnified view of a portion of position A in the middle.

[0036] Icons: 1-Silicon material transport path, 2-Air curtain, 3-Distribution container, 4-Air inlet, 5-Air ring, 6-Air outlet, 7-Wedge block, 8-Electrostatic ion bar, 9-Photoelectric switch. Detailed Implementation

[0037] In the following description, only certain exemplary embodiments are briefly described. As those skilled in the art will recognize, the described embodiments can be modified in various ways without departing from the spirit or scope of the present invention.

[0038] In the description of the embodiments of this utility model, it should be understood that the terms "width", "thickness", "upper", "lower", "axial", "circumferential", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings. They are only for the convenience of describing the embodiments of this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this utility model.

[0039] Furthermore, the term "multiple" means two or more, unless otherwise explicitly specified.

[0040] In this embodiment of the invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this embodiment of the invention according to the specific circumstances.

[0041] The embodiments of this utility model will be described in detail below.

[0042] Example 1

[0043] See Figures 1-3 This embodiment provides an electrostatic elimination device, including an ion generating unit, an air curtain 2 generating unit, an electrostatic monitoring unit, and a control unit.

[0044] An ion generating unit is arranged above the silicon material transport path 1 to release an ion flow; the power of the ion generating unit is adjustable.

[0045] An air curtain 2 generating unit is arranged above the silicon material transport path 1 to generate air curtain 2. The angle α between air curtain 2 and the direction of silicon material movement is 30° (the direction of silicon material movement is the same as the transport direction of silicon material transport path 1). The width L1 of air curtain 2 is greater than or equal to the width L2 of silicon material transport path 1. An ion generating unit is located on the path of air curtain 2.

[0046] The electrostatic monitoring unit is located above or to the side of the silicon material transport path 1. The electrostatic monitoring unit includes an electrostatic sensor (not shown in the figure) for real-time monitoring of the electrostatic potential on the surface of the silicon material. The output of the electrostatic monitoring unit is communicatively connected to the input of the control unit.

[0047] The output of the control unit is communicatively connected to the control terminals of the ion generating unit and the air curtain 2 generating unit to control their operating status. The control unit includes a PLC controller.

[0048] Silicon material transport path 1 is located at key nodes such as conveyor belts, crusher outlets, and sorting equipment inlets. The electrostatic potential of the silicon material surface is monitored in real time by an electrostatic monitoring unit to help the control unit determine the strength of the electrostatic charge. When the electrostatic potential (detection data from the electrostatic monitoring unit) exceeds a first preset threshold, the ion generating unit is activated. The ion flow released by the ion generating unit forms an ionization zone, which neutralizes the electrostatic charge on the silicon material surface, thereby eliminating the adsorption force of the silicon material on impurities and reducing impurity adsorption and metal contamination at the source. When the electrostatic potential (detection data from the electrostatic monitoring unit) exceeds a second preset threshold (the second preset threshold is greater than the first preset threshold), the power of the ion generating unit is increased while the air curtain 2 generating unit is activated to form an air curtain 2 in the ionization zone. The air curtain 2 is at a 30° angle to the direction of silicon material movement. This angle design can minimize silicon powder flying and prevent secondary pollution caused by airflow disturbance. The air curtain 2 generating unit is only used as an auxiliary unit. It is turned on when air blowing assistance is needed and turned off when not needed to save compressed air, adapt to the working conditions of different production lines, and improve the versatility and flexibility of the device.

[0049] Example 2

[0050] This embodiment is one implementation of the ion generating unit and the air curtain 2 generating unit.

[0051] See Figures 1-3 The air curtain 2 generating unit includes a distribution container 3 and an air ring 5.

[0052] The distribution container 3 is a hollow cuboid shape. One end of the distribution container 3 is connected to an air inlet 4, which is a threaded quick-release connector. The air inlet 4 is connected to an air inlet valve (not shown in the figure). One side of the distribution container 3 faces the silicon material transport path 1 and has multiple air outlets. The air inlet 4 is connected to instrument air (compressed air), using instrument air as the air source.

[0053] The air ring 5 is detachably connected to the air outlet (e.g., by a threaded connection). One side of the air ring 5 faces the silicon material transport path 1 and has an air outlet 6, which is coaxial with the air outlet. Along the axial direction of the air outlet 6, both the inner and outer diameters of the air outlet 6 gradually decrease to accelerate the flow rate of compressed air. The air ring 5 has wedge-shaped blocks 7, and multiple wedge-shaped blocks 7 are arranged at intervals along the circumference of the air outlet 6.

[0054] The ion generating unit includes an electrostatic ion bar 8; the power of the electrostatic ion bar 8 can be adjusted by regulating its input voltage. The electrostatic ion bar 8 is located inside the air outlet and coaxial with the air outlet head 6, so that the ion generating unit and the air curtain 2 generating unit are integrated into one unit.

[0055] The working principle of the air curtain 2 generating unit and the ion generating unit is as follows: When air blowing assistance is required, the air inlet valve is opened, and compressed gas enters the distribution container 3 from the air inlet port 4, carrying the ion stream released by the electrostatic ion bar 8, which flows out from the air outlet and air outlet head 6 to neutralize the electrostatic charge on the surface of the silicon material; when air blowing assistance is not required, the air inlet valve is closed. The wedge block 7 is designed to facilitate the installation of the air ring 5 by turning it.

[0056] Example 3

[0057] This embodiment is an improvement on embodiment 1 or 2.

[0058] See Figures 1-3 This embodiment also includes a silicon material detection unit arranged above or to the side of the silicon material transport path 1. The silicon material detection unit includes a photoelectric switch 9, which is used to detect whether there is silicon material on the silicon material transport path 1. When there is no silicon material, it feeds back to the control unit, and the control unit causes the ion generation unit and the air curtain 2 generation unit to automatically shut down. When there is silicon material, it feeds back to the control unit, and the control unit allows the ion generation unit and the air curtain 2 generation unit to automatically start when the requirements are met.

[0059] The above solution automates the start-up and shutdown of the electrostatic eliminator, reducing the possibility of the ion generation unit and the air curtain 2 generation unit being accidentally triggered.

[0060] Finally, it should be noted that the above are merely preferred embodiments of this application and are not intended to limit this application. For those skilled in the art, this application can have various modifications and variations. Without conflict, the embodiments and features described in the embodiments of this application can be arbitrarily combined with each other. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A static electricity elimination device, characterized in that, include: An ion generating unit is arranged above the silicon transport path to release an ion flow; An air curtain generating unit is arranged above the silicon material transport path to generate an air curtain, wherein the angle between the air curtain and the direction of silicon material movement is 30°. An electrostatic monitoring unit is installed above or to the side of the silicon material transport path to monitor the electrostatic potential of the silicon material surface in real time. The output of the electrostatic monitoring unit is communicatively connected to the input of the control unit. The control unit has its output terminal communicatively connected to the control terminals of the ion generating unit and the air curtain generating unit.

2. The static electricity elimination device according to claim 1, characterized in that, The power of the ion generating unit is adjustable; the control unit is configured to: When the detection data of the electrostatic monitoring unit is greater than the first preset threshold, the ion generating unit is activated; When the detection data of the electrostatic monitoring unit is greater than the second preset threshold, the power of the ion generating unit is increased and the air curtain generating unit is activated. The second preset threshold is greater than the first preset threshold.

3. The static electricity elimination device according to claim 1, characterized in that, The width of the air curtain is greater than or equal to the width of the silicon material transport path.

4. The static electricity elimination device according to claim 1, characterized in that, The air curtain generating unit includes: A distribution container is connected to an air inlet, which is connected to an air inlet valve. One side of the distribution container faces the silicon material transport path and has an air outlet. An air ring, connected to the air outlet, has one side facing the silicon material transport path and has an air outlet.

5. The static electricity elimination device according to claim 4, characterized in that, Along the axial direction of the air outlet, the inner diameter of the air outlet gradually decreases.

6. The static electricity elimination device according to claim 4, characterized in that, The air ring has wedge-shaped blocks, and multiple wedge-shaped blocks are arranged at circumferential intervals along the air outlet.

7. The static electricity eliminator according to claim 4, characterized in that, The ion generating unit includes an electrostatic ion bar.

8. The static electricity elimination device according to claim 7, characterized in that, The ion generating unit and the air curtain generating unit are integrated into one unit.

9. The static electricity elimination device according to claim 8, characterized in that, The electrostatic ion bar is located inside the gas outlet.

10. The static electricity eliminator according to any one of claims 1 to 9, characterized in that, It also includes a silicon material detection unit, which is used to detect whether there is silicon material in the silicon material transport path and to feed back the detection result to the control unit.

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