Device for desorption and cleaning

Abstract

The application provides a debonding and cleaning integrated device, and relates to the technical field of semiconductor processing. The device of the application can effectively complete the debonding and cleaning operation, and can effectively remove the residual adhesive layer on the device wafer.

Description

Technical Field

[0001] This application relates to the field of semiconductor processing technology, and in particular to an integrated debonding and cleaning device. Background Technology

[0002] In packaging processes, to meet the requirements of TSV (Through-Silicon Via) and 3D stacked integrated manufacturing, the back of the wafer is thinned. However, ultra-thin device wafers have reduced mechanical strength and are prone to warping, which can lead to reduced device performance and poor uniformity. Therefore, the industry usually temporarily bonds the device wafer to the carrier wafer and then debonds it after the relevant processes are completed.

[0003] However, when detaching the carrier wafer via laser debonding, the laser beam penetrates the carrier wafer, focuses on the temporary bonding layer, and scans and heats it. The photothermal release adhesive layer between the device wafer and the carrier wafer decomposes and melts due to heat, causing the device wafer and carrier wafer to debond and detach. Adhesive residue remains on both surfaces. The carrier wafer can be recycled, but the device wafer needs to be placed in a cleaning device to remove residual adhesive. However, the cleaning equipment provided by related technologies still has adhesive residue after cleaning the device wafer. Therefore, the equipment in these technologies cannot efficiently complete the debonding and cleaning operations, leaving adhesive residue on the device wafer. Utility Model Content

[0004] This application provides an integrated debonding and cleaning device, which solves the problem that related technologies are difficult to efficiently complete debonding and cleaning operations, leaving adhesive residues on the device wafers. This solution can achieve debonding and rapid cleaning of device wafers through the overall layout of the device, and can also effectively remove residual adhesive layers through the cooperation of various units within the device.

[0005] In a first aspect, this application provides an integrated debonding and cleaning device, which includes a first unit compartment, a second unit compartment, a third unit compartment and a fourth unit compartment formed by partitions. The second unit compartment, the third unit compartment and the fourth unit compartment are sequentially arranged on the first side, the second side and the third side of the first unit compartment, and a sealing door is provided on the partition to control the communication state between the different unit compartments. The wafer loading and unloading unit is located on the fourth side of the first unit compartment. The wafer loading and unloading unit is used to receive bonding wafers, which are wafers formed by bonding device wafers and carrier wafers. The first unit compartment is equipped with a Robot loading and unloading unit, which is used to transfer device wafers and / or carry wafers between the unit compartments; The second unit compartment is sequentially equipped with a wafer scanning and alignment unit, a laser debonding unit, a debonding transfer unit, and a debonding recycling unit. The distance between the laser debonding unit and the wafer scanning and alignment unit, the debonding transfer unit, and the inner wall of the second unit compartment is greater than a first preset value. The wafer scanning and alignment unit is located on the side closer to the wafer loading and unloading unit. The wafer scanning and alignment unit is used to scan and align the bonded wafers so that the bonded wafers are aligned with the laser debonding unit. The laser debonding unit is used to separate the bonded wafers to obtain device wafers and carrier wafers. The debonding recycling unit is used to store the carrier wafers. The debonding transfer unit is used to transfer the carrier wafers separated from the laser debonding unit to the debonding recycling unit. The third unit is equipped with a Plasma cleaning unit, which is used to clean the device wafers separated from the laser debonding unit. The fourth unit is equipped with a solvent cleaning unit, which is used to clean the device wafers that have been treated by the Plasma cleaning unit again with cleaning solvent.

[0006] The debonding and cleaning integrated equipment of this application can optimize the overall layout of the equipment and place the debonding and recycling unit at the rear so that a single robot loading and unloading unit can handle all loading and unloading stations while avoiding cross-contamination caused by recycling the wafers. The laser debonding unit is set up independently and integrated with the Plasma cleaning unit. Thus, by optimizing the overall layout, debonding and cleaning are integrated, and the debonding and cleaning of the device wafers are achieved efficiently and quickly, effectively removing residual adhesive layers from the device wafers. Attached Figure Description

[0007] Figure 1 This is a schematic diagram of the layout of an integrated debonding and cleaning device provided in an embodiment of this application.

[0008] Figure 2 This is a schematic diagram of the structure of an integrated debonding and cleaning device provided in an embodiment of this application.

[0009] Figure 3 This is a schematic diagram of the debonding stage module provided in one embodiment of this application.

[0010] Figure 4 This is a schematic diagram of the structure of a Plasma cleaning unit provided in an embodiment of this application.

[0011] Figure 5 A schematic diagram of the structure of a first cleaning subunit is provided for one embodiment of this application. Detailed Implementation

[0012] The present application will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the embodiments of the present application and are not intended to limit the scope of the present application. Furthermore, it should be noted that, for ease of description, the accompanying drawings only show the parts relevant to the embodiments of the present application, and not all structures. Those skilled in the art, after reading this specification, should be able to deduce that any combination of technical features can constitute an optional implementation method, provided that the technical features do not contradict each other.

[0013] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects, not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class, not limited in number; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship. In the description of this application, "multiple" means two or more, and "several" means one or more.

[0014] In packaging processes, to meet the requirements of TSV (Through-Silicon Via) and 3D stacked integrated manufacturing, the back of the wafer is thinned. However, ultra-thin device wafers have reduced mechanical strength and are prone to warping, which can lead to reduced device performance and poor uniformity. Therefore, the industry usually temporarily bonds the device wafer to the carrier wafer and then debonds it after the relevant processes are completed.

[0015] Temporary bonding forms a bonded wafer by bonding a device wafer coated with temporary bonding adhesive and a carrier wafer coated with photothermal release adhesive under high temperature and pressure in a vacuum environment. The temporary bonding layer consists of the temporary bonding adhesive and photothermal release adhesive between the device wafer and the carrier wafer. However, when detaching the carrier wafer via laser debonding, the laser beam passes through the carrier wafer, focuses on the temporary bonding layer, and scans and heats it. The photothermal release adhesive layer between the device wafer and the carrier wafer decomposes and melts due to heat, causing the device wafer and the carrier wafer to debond and detach. Adhesive residue remains on both surfaces. The carrier wafer can be recycled and reused, while the device wafer needs to be placed in a cleaning device to remove residual adhesive. However, the cleaning equipment provided by related technologies still has adhesive residue after cleaning the device wafer. Therefore, the equipment of related technologies cannot efficiently complete the debonding and cleaning operations, resulting in adhesive residue remaining on the device wafer.

[0016] In response, this application provides an integrated debonding and cleaning device. The device is divided into multiple unit compartments through an internal layout design, and corresponding unit modules are set in different unit compartments to perform different operations in each unit compartment. This allows the bonded wafer to be moved between different unit compartments to complete the debonding and cleaning operations on the bonded wafer.

[0017] Figure 1 This is a schematic diagram of the layout of an integrated debonding and cleaning device provided in an embodiment of this application, with reference to... Figure 1 In one embodiment, the debonding and cleaning integrated device (hereinafter referred to as the device) is divided into a first unit compartment 110, a second unit compartment 120, a third unit compartment 130, and a fourth unit compartment 140 by partitions. The second unit compartment 120, the third unit compartment 130, and the fourth unit compartment 140 are sequentially arranged on the first, second, and third sides of the first unit compartment 110, respectively. That is, the other unit compartments are arranged around the first unit compartment 110. Furthermore, a sealing door is provided on the partition. It is conceivable that this sealing door can be opened or closed to control the communication state between the different unit compartments. For example, when the sealing door on the partition between the first unit compartment 110 and the second unit compartment 120 is open, the first unit compartment 110 and the second unit compartment 120 are connected; when the sealing door on the partition between the first unit compartment 110 and the second unit compartment 120 is closed, the first unit compartment 110 and the second unit compartment 120 are not connected. Furthermore, by using partitions, the equipment can effectively isolate the impact of unit modules in different unit compartments on other unit compartments during operation.

[0018] Figure 2 The figure shows a schematic diagram of the integrated debonding and cleaning device provided in an embodiment of this application. A wafer loading / unloading unit 210 is provided on the fourth side of the first unit compartment 110. The wafer loading / unloading unit 210 is used to receive bonding wafers, that is, the bonded wafer formed after the device wafer and the carrier wafer are bonded is received into the device by the wafer loading / unloading unit 210. Furthermore, a robot loading / unloading unit 220 is provided in the first unit compartment 110. This robot loading / unloading unit 220 is used to transfer device wafers and / or carrier wafers between the unit compartments. It is conceivable that the robot loading / unloading unit 220 can also receive bonding wafers from the wafer loading / unloading unit 210 and then transfer the bonding wafers to another unit compartment for further processing, such as transferring them to the second unit compartment 120 for debonding processing.

[0019] The second unit compartment 120 is sequentially equipped with a wafer scanning and alignment unit 230, a laser debonding unit 240, a debonding transfer unit 250, and a debonding recycling unit 260. The wafer scanning and alignment unit 230 is located on one side of the wafer loading and unloading unit 210 to facilitate the rapid transfer of bonded wafers to the wafer scanning and alignment unit 230. The debonding recycling unit 260 is located away from the wafer loading and unloading unit 210 and the robot loading and unloading unit 220 to avoid cross-contamination caused by uncleaned carrier wafers.

[0020] The wafer scanning and alignment unit 230 is used to scan and align the bonded wafer to align it with the laser debonding unit 240. The laser debonding unit 240 is used to separate the bonded wafer to obtain the device wafer and the carrier wafer. The debonding recycling unit 260 is used to store the carrier wafer. The debonding transfer unit 250 is used to transfer the carrier wafer separated from the laser debonding unit 240 to the debonding recycling unit 260.

[0021] Understandably, within the second unit compartment 120, the wafer scanning and alignment unit 230, the laser debonding unit 240, the debonding transfer unit 250, and the debonding recycling unit 260 are arranged sequentially. This allows the bonded wafers to enter the second unit compartment 120, be aligned by the wafer scanning and alignment unit 230, be separated by the laser debonding unit 240, and then transferred to the debonding recycling unit 260 for storage via the debonding transfer unit 250. Furthermore, the wafers are transferred to the Robot loading / unloading unit 220, which then transfers the separated device wafers to the third unit compartment 130.

[0022] Moreover, the distance between the laser debonding unit 240 and the wafer scanning and alignment unit 230, the debonding transfer unit 250, and the inner wall of the second unit chamber 120 is greater than the first preset value. That is, the laser debonding unit 240 is set independently and is not directly rigidly connected to other unit modules, thereby effectively isolating the vibration generated during the operation of other unit modules, which helps to ensure the stability of the laser debonding and peeling process.

[0023] A Plasma cleaning unit 270 is installed in the third unit compartment 130. The Plasma cleaning unit 270 is used to clean the device wafers separated from the laser debonding unit 240. It can be understood that the Robot loading and unloading unit 220 can transfer the device wafers separated from the laser debonding unit 240 to the Plasma cleaning unit 270. Then, the Plasma cleaning unit 270 uses plasma to clean the device wafers. For example, sufficient energy is applied to the gas to make it into a plasma state. The plasma bombards the surface of the product being cleaned, that is, it bombards the residual adhesive layer on the surface of the device wafer, thereby achieving the effect of cleaning the device wafer.

[0024] After the device wafer is cleaned by the Plasma cleaning unit 270, it can be transferred to the fourth unit compartment 140 by the Robot loading / unloading unit 220. The fourth unit compartment 140 is equipped with a solvent cleaning unit 280, which is used to clean the device wafer treated by the Plasma cleaning unit 270 again with a cleaning solvent. The cleaning solvent, acting as a solvent to react with residual adhesive layers and remove them from the device wafer, can be configured according to the adhesive layers used during bonding. In actual use, the solvent cleaning unit 280 can spray the cleaning solvent onto the surface of the device wafer through a nozzle to remove the adhesive layers, thereby achieving a better cleaning effect.

[0025] To address this, the device employs an internal layout design that allows the Robot loading / unloading unit 220 to transfer device wafers between different unit compartments by performing loading / unloading operations within the first unit compartment 110. These wafers are then processed according to their respective process steps within the corresponding unit compartment. For example, after the Robot loading / unloading unit 220 is activated, it receives the bonding wafer from the wafer loading / unloading unit 210 and transfers it to the wafer scanning and alignment unit 230 in the second unit compartment 120 for scanning and alignment. After scanning and alignment, the wafer is then transferred to the laser debonding unit 240 for laser debonding and stripping operations, thereby obtaining the device wafer and the carrier wafer. The debonding transfer unit 250 transfers the carrier wafers to the debonding recycling unit 260 for recycling. Simultaneously, the robot loading / unloading unit 220 conveys the device wafers to the Plasma cleaning unit 270 in the third unit compartment 130, where the Plasma cleaning unit 270 performs plasma cleaning on the carbon black layer adhering to the surface of the device wafers. Then, the robot loading / unloading unit 220 conveys the Plasma-cleaned device wafers to the solvent cleaning unit 280 for solvent cleaning to ensure that the adhesive layer on the device wafers is completely removed.

[0026] As can be seen from the above scheme, this equipment can optimize the overall layout of the equipment and place the debonding and recycling unit at the rear so that a set of robot loading and unloading units can take care of all loading and unloading stations while avoiding cross-contamination caused by recycling the carrier wafers. The laser debonding unit is set up independently and integrated with the Plasma cleaning unit, thereby efficiently realizing the debonding and rapid cleaning of the device wafers and effectively removing the residual adhesive layer on the device wafers.

[0027] Bonded wafers can be categorized into different product types by using different types of carrier wafers, such as carrier wafers with and without frames. This results in two main types: wafer-level products (including bonded wafers with carrier wafers without frames) and frame-level products (including bonded wafers with carrier wafers with frames). Different structures are incorporated into the wafer loading and unloading units to accommodate these different types of bonded wafers.

[0028] Specifically, refer to Figure 2 In one embodiment, the wafer loading / unloading unit 210 includes a first loading / unloading subunit 211 and a second loading / unloading subunit 212, which are arranged side-by-side on the fourth side of the first unit compartment 110. The second loading / unloading subunit 212 is located near the wafer scanning and alignment unit 230, allowing the first and second loading / unloading subunits 211 and 212 to respectively handle different types of bonded wafers. For example, the first loading / unloading subunit 211 handles wafer-level products, while the second loading / unloading subunit 212 handles frame-level products. By using the first and second loading / unloading subunits 211 and 212 to handle different types of bonded wafers, the device can adapt to different types of bonded wafers, thereby expanding the device's application range for wafer debonding.

[0029] Optionally, the robot loading / unloading unit includes a first upper arm, a second upper arm, and a robotic arm. Both the first and second upper arms are located at the end of the robotic arm, and both are used to handle different types of bonded wafers, such as handling wafer-level products via the first upper arm and frame-level products via the second upper arm. It is understood that the robot loading / unloading unit is used to transfer wafers on the first or second upper arm between different unit compartments via the robotic arm. For example, before debonding, bonded wafers (such as wafer-level products) handled by the wafer loading / unloading unit can be carried by the first upper arm on the robot loading / unloading unit. Then, as the robotic arm rotates and opens, the first upper arm can transfer the bonded wafer from the wafer loading / unloading unit to the wafer scanning and alignment unit in the second unit compartment. Therefore, the equipment can adapt to different types of bonded wafers through different components on the robot loading / unloading unit, thereby enabling the transfer of different products and helping to expand the scope of application for wafer debonding.

[0030] In one embodiment, the laser debonding unit includes a debonding platform module, a debonding stage module, a debonding optical path module, and a debonding stripping module. The debonding platform module provides a platform for placing the debonding stage module, the debonding optical path module, and the debonding stripping module. The debonding stage module supports the bonded wafer. The debonding optical path module generates and emits a laser beam to heat the adhesive layer on the bonded wafer. The debonding stripping module adsorbs the carrier wafer from the bonded wafer, separating the carrier wafer from the device wafer.

[0031] Optionally, Figure 3 This is a schematic diagram of the debonding stage module provided in one embodiment of this application. As shown in the figure, the debonding stage module includes a lifting platform 310, a platform lifting base plate 320, a support member 330, a platform adsorption base plate 340, a wafer chuck stage 350, a suction cup 360, and multiple support rod modules 370. A tension sensor 380 is provided between the lifting platform and the platform lifting base plate. The platform lifting base plate 320 is connected to the platform adsorption base plate 340 via the support member 330. The platform adsorption base plate 340 is provided with two sets of vacuum channels. The wafer chuck stage 350 is disposed on the platform adsorption base plate 340, and the suction cup 360 is disposed on the wafer chuck stage 350. Therefore, one set of vacuum channels on the platform adsorption base plate 340 is used to adsorb and fix the wafer chuck stage 350, while the other set of vacuum channels is used to connect to the suction cup 360 so that the suction cup 360 can adsorb and fix the bonded wafer. Understandably, the stage adsorption base plate 340 adsorbs the wafer chuck stage 350, and the chuck 360 adsorbs and fixes the bonded wafer. Vacuum adsorption allows the bonded wafer to be fixed without damage or the addition of other components. Optionally, multiple vacuum channels can be provided in each group to increase the adsorption force on the wafer adsorption stage and the bonded wafer. The tension sensor 380 is used to monitor the peeling force on the carrier wafer after laser debonding to prevent damage to the wafer during the peeling process, thus forming a closed-loop control. The lifting stage 310 is used to move the bonded wafer and control the distance between the bonded wafer and the field lens in the laser debonding unit, so as to focus the laser beam on the photothermal release adhesive layer in the temporary bonding layer of the wafer, thereby causing the photothermal release adhesive layer to decompose and melt due to heat, and the device wafer to debond and detach from the carrier wafer.

[0032] Furthermore, multiple support rod modules 370 are mounted on the stage adsorption base plate 340 and distributed around the periphery of the wafer chuck stage 350. The support rod modules 370 are used to fix the outer frame during debonding of bonded wafers with an outer frame. Specifically, for frame-level products, the support rod modules 370 can fix the outer frame, thus pressing it down during debonding and stripping. Therefore, the equipment provided in this solution can adapt to different types of bonded wafers through its debonding stage modules, achieving debonding and subsequent cleaning operations compatible with both frame-level and wafer-level products.

[0033] In addition, the photothermal release adhesive in the temporary bonding layer is melted by the laser beam during the bonding process and carbonized at high temperature. After peeling, the device wafer surface will not only have the temporary bonding adhesive layer, but also a carbon black layer formed after carbonization. This can be addressed by the Plasma cleaning unit in the equipment provided in this solution.

[0034] Figure 4The figure shows a schematic diagram of a Plasma cleaning unit according to an embodiment of this application. In one embodiment, the Plasma cleaning unit includes a Plasma rack module 410, a gas control module (not shown), a cleaning chamber module 420, an upper electrode module 430, a lower electrode module 440, and a vacuum pipe 450. The Plasma rack module 410 is used to house the vacuum pipe 450, the gas control module, the cleaning chamber module 420, the upper electrode module 430, and the lower electrode module 440. Corresponding mounting positions are provided on the Plasma rack module 410 to hold these modules, such as by constructing the mounting positions using a metal frame. The cleaning chamber module 420 provides a cleaning chamber for placing device wafers. The gas control module is connected to the cleaning chamber via a pipe to control the working gas introduced into the cleaning chamber, such as O2, N2, Ar, He, or CF4, to remove the carbon black layer on the wafer. The vacuum pipe 450 is connected to the cleaning chamber and is used to connect an external vacuum pump to create a vacuum environment in the cleaning chamber. The vacuum pump can extract gas from the cleaning chamber to create a vacuum environment in the cleaning chamber, for example, by extracting gas before and after the cleaning process, thereby creating a vacuum environment in the cleaning chamber.

[0035] Furthermore, the upper electrode module 430 and the lower electrode module 440 are located on the upper and lower sides of the cleaning chamber, respectively. These modules seal the cleaning chamber and create a high-voltage DC electric field within it. The high-energy electrons generated by this field collide with the working gas molecules, forming a conductive gas filled with high-energy active particles—plasma—comprising ions, electrons, free radicals, and excited-state neutral particles. Through the combined effects of oxidation decomposition, physical bombardment, and UV pyrolysis, the Plasma cleaning unit can efficiently and non-destructively remove stubborn carbon black layers, ensuring the integrity of the device wafer and the reliability of subsequent processes.

[0036] Optionally, the cleaning chamber module includes a transfer valve, a lifting cylinder, a circulating water-cooled tray, an electrostatic chuck, and multiple pins. The transfer valve is located on one side of the cleaning chamber and is used to control the opening and closing of the cleaning chamber during the loading and unloading of device wafers by the Robot loading and unloading unit. Both the circulating water-cooled tray and the electrostatic chuck are located within the cleaning chamber, with the electrostatic chuck positioned above the circulating water-cooled tray. The electrostatic chuck is used to hold the device wafers, and the circulating water-cooled tray is used to cool the electrostatic chuck. It is understood that the electrostatic chuck needs to maintain a constant temperature during the cleaning process, and there is a risk of temperature rise. To address this, the circulating water-cooled tray cools the electrostatic chuck in real time to maintain a constant temperature, thereby preventing thermal stress from causing warping of the ultra-thin device wafers.

[0037] Multiple pins are mounted on the end support of the piston rod of the lifting cylinder. The circulating water-cooling plate and the electrostatic chuck both have multiple through holes adapted to the pins. The lifting cylinder drives the pins through these through holes to receive the device wafer and place it on the electrostatic chuck. Therefore, after the robot loading / unloading unit transfers the device wafer into the third unit chamber, the multiple pins, driven by the lifting cylinder, rise through the circulating water-cooling plate and the electrostatic chuck to receive the device wafer. Then, driven by the lifting cylinder, they descend and place the device wafer on the electrostatic chuck, facilitating subsequent Plasma cleaning.

[0038] After cleaning the device wafer using the Plasma cleaning unit, to avoid any remaining adhesive layer, the equipment further cleans the device wafer using a solvent cleaning unit. This is done to accommodate the carbon black layer and temporary bonding layer formed during the debonding process, as per [reference needed]. Figure 1 The solvent cleaning unit 280 includes a first cleaning subunit 281 and a second cleaning subunit 282. The first cleaning subunit 281 and the second cleaning subunit 282 are arranged side by side in the fourth unit chamber 140. The first cleaning subunit 281 and the second cleaning subunit 282 are respectively used to clean the device wafers after they have been processed by the Plasma cleaning unit 270. The first cleaning subunit 281 and the second cleaning subunit 282 correspond to two cleaning processes. The device wafers after being processed by the first cleaning subunit 281 and the second cleaning subunit 282 can have different adhesive layers cleaned.

[0039] Optionally, Figure 5 A schematic diagram of the structure of a first cleaning subunit is provided for an embodiment of this application. As shown in the figure, both the first and second cleaning subunits include a cleaning chamber module 510, a first swing arm module 520, a second swing arm module 530, and a solvent recovery module 540. The cleaning chamber module 510 provides a cleaning chamber for placing device wafers. The solvent recovery module 540 is located below the cleaning chamber module 510 and is connected to the cleaning chamber module 510 via a pipe. The solvent recovery module 540 is used to recover waste liquid within the cleaning chamber. The first swing arm module 520 and the second swing arm module 530 are respectively located on both sides of the cleaning chamber module 510. Both the first and second swing arm modules 520 and 530 are equipped with nozzles, which are used to swing the nozzles to spray cleaning solvent onto the surface of the device wafers.

[0040] Understandably, during the cleaning process, the first swing arm module 520 and the second swing arm module 530 spray cleaning solvent onto the surface of the device wafer through their nozzles to remove the adhesive layer. Furthermore, the first and second swing arm modules 520 and 530 can continuously swing the nozzles during the cleaning process to ensure the cleaning solvent is evenly sprayed onto the surface of the device wafer, achieving a better cleaning effect. The waste liquid generated after spraying flows through pipes into the solvent recovery module 540 for waste liquid recovery. It is conceivable that after cleaning, water can also be sprayed through the nozzles to clean any residual solvent on the device wafer, and this water will ultimately flow through pipes into the solvent recovery module 540.

[0041] It should be noted that the first cleaning subunit and the second cleaning subunit have the same structure, but the cleaning solvents they are configured with are different. That is, the first cleaning subunit and the second cleaning subunit are configured with different cleaning solvents. Optionally, the cleaning solvent used by the first cleaning subunit and the cleaning solvent used by the second cleaning subunit are used to clean the carbon black layer and the temporary bonding adhesive layer attached to the device wafer, respectively.

[0042] In one embodiment, the cleaning chamber module includes a lifting and rotating module, an adapter flange, and a vacuum suction cup. Specifically, the lifting and rotating module is mounted on the bottom substrate of the cleaning chamber, the adapter flange is mounted on the rotating shaft of the lifting and rotating module, and a vacuum channel is provided inside the adapter flange. The vacuum suction cup is mounted on the adapter flange and communicates with the vacuum channel. The vacuum suction cup is used to adsorb device wafers, and the lifting and rotating module is used to drive the device wafers adsorbed by the vacuum suction cup to move up and down and / or rotate within the cleaning chamber. Therefore, after the lifting and rotating module adsorbs the device wafers via the vacuum suction cup, it can move the device wafers through any operation of lifting or rotating, so that the nozzles on the first and second swing arm modules can better spray the cleaning solvent onto the surface of the device wafers, thus improving the cleaning effect.

[0043] It should also be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0044] Note that the above description is merely a preferred embodiment and the technical principles employed in this application. Those skilled in the art will understand that this application is not limited to the specific embodiments described herein, and various obvious changes, readjustments, and substitutions can be made without departing from the scope of protection of this application. Therefore, although this application has been described in detail through the above embodiments, this application is not limited to the above embodiments. Many other equivalent embodiments may be included without departing from the concept of this application, and the scope of this application is determined by the scope of the appended claims.

Claims

1. A debonding and cleaning integrated device, characterized in that, It includes a first unit compartment, a second unit compartment, a third unit compartment, and a fourth unit compartment formed by partitions. The second unit compartment, the third unit compartment, and the fourth unit compartment are sequentially arranged on the first side, the second side, and the third side of the first unit compartment, and a sealing door is provided on the partition to control the communication state between the different unit compartments. A wafer loading and unloading unit is located on the fourth side of the first unit compartment. The wafer loading and unloading unit is used to receive bonding wafers, which are wafers formed by bonding a device wafer and a carrier wafer. The first unit compartment is equipped with a Robot loading and unloading unit, which is used to transfer the device wafer and / or the carrier wafer between the unit compartments; The second unit compartment is sequentially equipped with a wafer scanning and alignment unit, a laser debonding unit, a debonding transfer unit, and a debonding recycling unit. The distances between the laser debonding unit and the wafer scanning and alignment unit, the debonding transfer unit, and the inner wall of the second unit compartment are all greater than a first preset value. The wafer scanning and alignment unit is located on the side closer to the wafer loading and unloading unit. The wafer scanning and alignment unit is used to scan and align the bonded wafers so that the bonded wafers are aligned with the laser debonding unit. The laser debonding unit is used to separate the bonded wafers to obtain the device wafer and the carrier wafer. The debonding recycling unit is used to store the carrier wafer. The debonding transfer unit is used to transfer the carrier wafer separated from the laser debonding unit to the debonding recycling unit. The third unit compartment is equipped with a Plasma cleaning unit, which is used to clean the device wafers separated from the laser debonding unit. The fourth unit compartment is equipped with a solvent cleaning unit, which is used to clean the device wafers that have been treated by the Plasma cleaning unit again using a cleaning solvent.

2. The integrated debonding and cleaning device according to claim 1, characterized in that, The wafer loading and unloading unit includes a first loading and unloading subunit and a second loading and unloading subunit. The first loading and unloading subunit and the second loading and unloading subunit are arranged side by side. The second loading and unloading subunit is located on the side close to the wafer scanning and alignment unit. The first loading and unloading subunit and the second loading and unloading subunit are respectively used to access different types of bonding wafers.

3. The integrated debonding and cleaning device according to claim 2, characterized in that, The Robot loading and unloading unit includes a first upper arm, a second upper arm, and a robotic arm. The first upper arm and the second upper arm are both located at the end of the robotic arm. The Robot loading and unloading unit is used to transfer bonded wafers and / or debonded device wafers on the first upper arm or the second upper arm between the various unit compartments via the robotic arm.

4. The integrated debonding and cleaning device according to claim 1, characterized in that, The debonding stage module in the laser debonding unit includes a lifting stage, a stage lifting base plate, a support component, a stage adsorption base plate, a wafer chuck stage, a chuck, and multiple support rod modules. A tension sensor is provided between the lifting platform and the platform lifting base plate. The tension sensor is used to monitor the peeling force value of the wafer after laser debonding. The platform lifting base plate is connected to the platform adsorption base plate through the support member. The wafer chuck stage is mounted on the stage adsorption base plate, and the chuck is mounted on the wafer chuck stage. The stage adsorption base plate is provided with two sets of vacuum channels. One set of vacuum channels is used to adsorb and fix the wafer chuck stage, and the other set of vacuum channels is used to connect the chuck so that the chuck can adsorb and fix the bonding wafer. The lifting platform is used to move the bonding wafer and control the distance between the bonding wafer and the field mirror in the laser debonding unit. Multiple support rod modules are disposed on the stage adsorption base plate and distributed around the periphery of the wafer chuck stage. The support rod modules are used to fix the outer frame when performing debonding processing on bonded wafers with an outer frame.

5. The integrated debonding and cleaning device according to claim 1, characterized in that, The Plasma cleaning unit includes a Plasma frame module, vacuum pipeline, gas control module, cleaning chamber module, upper electrode module, and lower electrode module. The Plasma rack module is used to house the vacuum pipe, the gas control module, the cleaning chamber module, the upper electrode module, and the lower electrode module. The cleaning chamber module is used to provide a cleaning chamber for placing the device wafer, and the gas control module is connected to the cleaning chamber through a pipeline to control the working gas introduced into the cleaning chamber; The upper electrode module and the lower electrode module are located on the upper and lower sides of the cleaning chamber, respectively, and the upper electrode module and the lower electrode module are used to seal the cleaning chamber and form a high-voltage DC electric field inside the cleaning chamber; The vacuum pipe is connected to the cleaning chamber, and the vacuum pipe is used to connect an external vacuum pump so that the vacuum pump can create a vacuum environment in the cleaning chamber.

6. The integrated debonding and cleaning device according to claim 5, characterized in that, The cleaning chamber module includes a transfer valve, a lifting cylinder, a circulating water cooling plate, an electrostatic chuck, and multiple pins; The transfer valve is located on one side of the cleaning chamber and is used to control the opening and closing of the cleaning chamber during the process of the Robot loading and unloading unit picking up and placing the device wafer. Both the circulating water cooling plate and the electrostatic chuck are disposed in the clean chamber. The electrostatic chuck is located above the circulating water cooling plate. The electrostatic chuck is used to place the device wafer, and the circulating water cooling plate is used to cool the electrostatic chuck. Multiple pins are disposed on the end support of the piston rod of the lifting cylinder. The circulating water cooling plate and the electrostatic chuck are each provided with multiple through holes adapted to the pins. The lifting cylinder is used to drive the pins through the through holes to receive the device wafer and place the device wafer on the electrostatic chuck.

7. The integrated debonding and cleaning device according to claim 1, characterized in that, The solvent cleaning unit includes a first cleaning subunit and a second cleaning subunit, which are arranged side by side in the fourth unit chamber. The first cleaning subunit and the second cleaning subunit are respectively used to clean the device wafers after they have been processed by the Plasma cleaning unit.

8. The integrated debonding and cleaning device according to claim 7, characterized in that, Both the first cleaning subunit and the second cleaning subunit include a cleaning chamber module, a first swing arm module, a second swing arm module, and a solvent recovery module; The cleaning chamber module is used to provide a cleaning chamber for placing the device wafer. The solvent recovery module is located below the cleaning chamber module and is connected to the cleaning chamber module through a pipe. The solvent recovery module is used to recover the waste liquid in the cleaning chamber. The first swing arm module and the second swing arm module are respectively disposed on both sides of the cleaning chamber module. Both the first swing arm module and the second swing arm module are provided with nozzles. The first swing arm module and the second swing arm module are used to swing the nozzles to spray cleaning solvent on the surface of the device wafer.

9. The integrated debonding and cleaning device according to claim 8, characterized in that, The cleaning chamber module includes a lifting and rotating module, an adapter flange, and a vacuum suction cup; The lifting and rotating module is mounted on the bottom substrate of the cleaning chamber. The adapter flange is mounted on the rotating shaft of the lifting and rotating module, and a vacuum channel is provided inside the adapter flange. The vacuum suction cup is mounted on the adapter flange and communicates with the vacuum channel. The vacuum suction cup is used to adsorb the device wafer. The lifting and rotating module is used to drive the device wafer adsorbed by the vacuum suction cup to lift and / or rotate within the cleaning chamber.

10. The integrated debonding and cleaning device according to any one of claims 7-9, characterized in that, The first cleaning subunit and the second cleaning subunit are respectively equipped with different cleaning solvents. The cleaning solvents used by the first cleaning subunit and the second cleaning subunit are used to clean the carbon black layer and the temporary bonding adhesive layer attached to the device wafer, respectively.

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