Gas dispersion device and reaction chamber

Abstract

The utility model discloses a kind of gas dispersing device and reaction chamber, belong to the field of semiconductors, the gas dispersing device at least includes: plate body;Center shaft, set on the plate body;Multi-ring air hole, through the plate body is set, and each ring the air hole includes multiple array distribution's hole;Cover plate, movably set on each hole;And telescopic rod, connect the center shaft and the cover plate.The gas dispersing device and reaction chamber provided by the utility model can freely adjust the concentration distribution of gas, improve the quality of semiconductor process.

Description

Technical Field

[0001] This utility model belongs to the field of semiconductor technology, and specifically relates to a gas dispersion device and a reaction chamber. Background Technology

[0002] In the semiconductor etching process, etching gas diffuses through holes in a gas dispersion device onto the wafer for etching. The uniformity of the etching gas distribution on the gas dispersion device determines the uniformity of the etching rate, and thus the quality of the wafer. However, due to differences in diffusion paths, the etching gas is prone to uneven distribution in the center and around the dispersion device. The dispersion device cannot adjust the uniformity of the etching gas, which will disrupt the uniformity of the etching rate. Utility Model Content

[0003] The purpose of this invention is to provide a gas dispersion device and a reaction chamber that can freely adjust the gas concentration distribution and improve the quality of semiconductor manufacturing processes.

[0004] To solve the above-mentioned technical problems, this utility model is achieved through the following technical solution:

[0005] This utility model provides a gas dispersion device, comprising:

[0006] plate body;

[0007] A central axis is disposed on the plate.

[0008] Multiple rings of air holes are provided throughout the plate, and each ring of air holes contains multiple arrayed holes;

[0009] Cover plate, movably disposed on each of the holes; and

[0010] A telescopic rod connects the central shaft and the cover plate.

[0011] In one embodiment of this utility model, all the cover plates and the telescopic rods are allowed to rotate and move synchronously around the central axis.

[0012] In one embodiment of this utility model, all the telescopic rods are spaced apart by their orthogonal projections on the plate.

[0013] In one embodiment of the present invention, for a cover plate over a hole, the telescopic rod allows the cover plate to extend and retract in the direction of the hole along the central axis.

[0014] In one embodiment of this utility model, the size of the cover plate is greater than or equal to the size of the hole.

[0015] In one embodiment of this utility model, the distance between two adjacent rings of air holes is greater than or equal to the size of the cover plate.

[0016] In one embodiment of this utility model, the shape of the hole is circular or polygonal.

[0017] In one embodiment of this utility model, the array distribution is a circular array distribution or a rectangular array distribution.

[0018] In one embodiment of this utility model, the telescopic rod includes a first telescopic rod, a second telescopic rod, and a third telescopic rod. One end of the first telescopic rod is connected to the central shaft, the other end of the first telescopic rod is connected to one end of the second telescopic rod, the other end of the second telescopic rod is connected to one end of the third telescopic rod, and the other end of the third telescopic rod is connected to the cover plate.

[0019] This utility model also provides a reaction chamber, comprising at least:

[0020] Cavity; and

[0021] At least one of the aforementioned gas dispersion devices is disposed within the cavity.

[0022] In summary, this utility model provides a gas dispersion device and a reaction chamber. By improving the structure of the gas dispersion device, the unexpected technical effect of this application is that the concentration distribution of the gas in the reaction chamber can be freely adjusted, thereby improving the quality of semiconductor processes such as deposition or etching. Moreover, the gas dispersion device and reaction chamber provided by this utility model can improve the flexibility of the gas dispersion device in adjusting the gas concentration distribution in the reaction chamber, making it suitable for large-scale application. Attached Figure Description

[0023] To more clearly illustrate the technical solutions of the embodiments of this utility model, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 This is a schematic diagram of the reaction chamber.

[0025] Figure 2 for Figure 1 A schematic diagram of a gas dispersion device.

[0026] Figure 3 for Figure 2 A magnified schematic diagram of the second ring of stomata.

[0027] Label Explanation:

[0028] 11. Cavity; 111. Top; 112. Bottom; 113. Side; 12. First medium source; 13. First dispersion device; 131. Plate; 132. Central shaft; 133. First ring of vents; 134. Second ring of vents; 135. Hole; 136. Cover plate; 137. Telescopic rod; 1371. First section of telescopic rod; 1372. Second section of telescopic rod; 1373. Third section of telescopic rod; 14. Second dispersion device; 15. Substrate; 16. Through hole. Detailed Implementation

[0029] The following specific examples illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. This utility model can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this utility model. It should be noted that, unless otherwise specified, the following embodiments and features described therein can be combined with each other.

[0030] It should be understood that this invention can be embodied in various forms and should not be construed as being limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of this invention to those skilled in the art.

[0031] The technical solution of this utility model will be further described in detail below with reference to the embodiments and accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.

[0032] Please see Figures 1 to 3As shown, this utility model provides a reaction chamber, including, for example, a chamber 11 and a gas dispersion device. The gas dispersion device is disposed within the chamber 11, and a substrate 15 is placed on one side of the gas dispersion device. By providing the gas dispersion device, the concentration distribution of the gas on the substrate 15 can be changed, thereby adjusting the etching rate or deposition rate of the gas at different positions on the substrate 15, to improve the quality of semiconductor processes such as etching or deposition. The gas dispersion device includes, for example, a plate 131, a central shaft 132, multiple rings of air holes, a cover plate 136, and a telescopic rod 137. The central shaft 132 is disposed on the plate 131, the multiple rings of air holes penetrate the plate 131, and each ring of air holes contains multiple arrayed holes 135. The cover plate 136 is movably disposed on each hole 135, and the telescopic rod 137 connects the central shaft 132 and the cover plate 136. In the gas dispersion device provided by this utility model, the cover plate 136 and the telescopic rod 137 can rotate and move around the central axis 132, and the telescopic rod 137 can drive the cover plate 136 to move in a telescopic manner to adjust the coverage range of the cover plate 136 over the hole 135, thereby adjusting the concentration distribution of gas on the plate 131 and improving the quality of semiconductor processes such as etching or deposition.

[0033] Please see Figure 1 As shown, in one embodiment of this utility model, the reaction chamber can be used for processes such as etching or deposition. In this embodiment, plasma etching is used as an example to illustrate the reaction chamber. Specifically, the shape and size of the cavity 11 in the reaction chamber can be selected according to actual conditions. In this embodiment, the cavity 11 is a cylinder as an example to illustrate the reaction chamber. The cavity 11 includes, for example, a top 111, a bottom 112, and a side 113. The top 111 and the bottom 112 are arranged opposite to each other, and the side 113 is arranged around the top 111 and the bottom 112. The substrate 15 is placed inside the cavity 11. By providing the cavity 11 to accommodate the gas dispersion device and the substrate 15, a space is provided for semiconductor processes such as etching or deposition.

[0034] Please see Figure 1 As shown, in one embodiment of this utility model, a first medium source 12 is provided outside the cavity 11. The first medium source 12 is connected to the top 111 and is used to introduce a first medium into the cavity 11. The first medium may be in the form of plasma, for example, or be a fluorine-containing gas or a chlorine-containing gas. The fluorine-containing gas may include at least one of carbon tetrafluoride, hexafluoroethane, or sulfur hexafluoride, and the chlorine-containing gas may include at least one of chlorine or boron trifluoride.

[0035] Please see Figure 1As shown, in one embodiment of this utility model, a second medium source is further provided outside the cavity 11. The second medium source is connected to the side portion 113 and is used to introduce a second medium into the cavity 11. After the second medium and the first medium are mixed in the cavity 11, they flow onto the substrate 15 to etch the substrate 15. The second medium is, for example, at least one of auxiliary gases such as oxygen, argon, or nitrogen, which can compensate for the limitations of the first medium in etching, thereby improving the etching rate or enhancing etching selectivity.

[0036] Please see Figure 1 As shown, in one embodiment of the present invention, a through hole 16 is provided around the side portion 113 between the top 111 and the substrate 15. The inlet of the through hole 16 is connected to the second medium source, and the outlet is connected to the cavity 11, so as to achieve the purpose of introducing the second medium into the cavity 11.

[0037] Please see Figures 1 to 3 As shown, in one embodiment of this utility model, a gas dispersion device is disposed within a cavity 11 between the top 111 and the substrate 15. The gas dispersion device may be at least one. In this embodiment, for example, there are two gas dispersion devices, including a first dispersion device 13 and a second dispersion device 14. The first dispersion device 13 is disposed within the cavity 11 between the top 111 and the through hole 16, and the second dispersion device 14 is disposed within the cavity 11 between the through hole 16 and the substrate 15. The first dispersion device 13 and the second dispersion device 14 have the same structure. In this embodiment, the structure of the dispersion device is described using the first dispersion device 13 as an example.

[0038] Please see Figures 1 to 3 As shown, in one embodiment of this utility model, the first dispersing device 13 includes, for example, a plate 131, a central shaft 132, multiple air holes, a cover plate 136, and a telescopic rod 137. The shape and size of the plate 131 are the same as those of the top 111, and the plate 131 is disposed in the cavity 11 between the top 111 and the through hole 16.

[0039] Please see Figures 1 to 3 As shown, in one embodiment of this utility model, a central shaft 132 is disposed on the plate 131 to support the telescopic rod 137 and the cover plate 136. Specifically, in this embodiment, the central shaft 132 is disposed, for example, at the center of the plate 131 on the side near the top 111.

[0040] Please see Figures 1 to 3As shown, in one embodiment of this utility model, multiple rings of air holes are disposed through the plate 131 and are spaced apart around the central axis 132. In this embodiment, a two-ring air hole configuration is used as an example. The two rings of air holes are, for example, a first ring of air holes 133 and a second ring of air holes 134, with the second ring of air holes 134 located between the first ring of air holes 133 and the central axis 132. Each ring of air holes contains multiple arrayed holes 135, which may be arranged in a circular or rectangular array, and the shape of the holes 135 may be, for example, circular or polygonal. In this embodiment, in each ring of air holes, the multiple holes 135 are arranged in a circular array, and the shape of the holes 135 is, for example, a regular hexagon.

[0041] Please see Figures 1 to 3 As shown, in one embodiment of this utility model, a cover plate 136 is movably disposed on each hole 135, that is, a cover plate 136 is disposed on each hole 135. The size of the cover plate 136 is, for example, larger than the size of the hole 135. By providing the cover plate 136 to block the hole 135, the concentration distribution of the etching gas on the first dispersion device 13 can be adjusted, thereby changing the etching rate of the gas at different locations on the surface of the substrate 15.

[0042] Please see Figures 1 to 3 As shown, in one embodiment of this utility model, there are, for example, multiple telescopic rods 137, each telescopic rod 137 connected to a central shaft 132 and a cover plate 136. Furthermore, all the telescopic rods 137 and the cover plate 136 can rotate synchronously around the central shaft 132, thereby adjusting the coverage area of ​​the cover plate 136 over the holes 135, and thus adjusting the concentration distribution of etching gas on the plate 131, ultimately improving the quality of semiconductor processes such as etching or deposition. Moreover, the telescopic rods 137 are spaced apart from each other on the orthographic projections onto the plate 131, i.e., staggered, to prevent the telescopic rods 137 on the first ring of air holes 133 from covering the holes 135 in the second ring of air holes 134. Furthermore, since the telescopic rod 137 can extend and retract, when the telescopic rod on the first ring of air holes 133 rotates to the hole 135 in the second ring of air holes 134, blocking the hole 135 in the second ring of air holes 134, the telescopic rod 137 can be retracted in the direction of the central axis 132 to prevent the telescopic rod 137 from blocking the hole 135 in the second ring of air holes 134. Furthermore, the width of the telescopic rod 137 is, for example, smaller than the diameter of the hole 135. Therefore, even when the telescopic rod on the first ring of air holes 133 rotates to the hole 135 in the second ring of air holes 134, the telescopic rod can only block a portion of one hole 135 in the second ring of air holes 134, and will not completely cover the hole 135. Gas can still enter the cavity 11 through the unblocked area of ​​the hole 135.

[0043] Please see Figures 1 to 3As shown, in one embodiment of this utility model, for each hole 135, the cover plate 136 and the telescopic rod 137 can drive the cover plate 136 to move telescopically along the central axis 132 of the hole 135. This can also adjust the coverage area of ​​the cover plate 136 over the hole 135, thereby adjusting the concentration distribution of etching gas on the plate 131 and ultimately improving the quality of semiconductor processes such as etching or deposition. Moreover, the distance between two adjacent rings of air holes, that is, the distance between the first ring of air holes 133 and the second ring of air holes 134, is, for example, greater than or equal to the size of the cover plate 136, so as to prevent the cover plate 136 from blocking the hole 135 in the second ring of air holes 134 when the telescopic rod 137 on the first ring of air holes 133 drives the cover plate 136 to retract and move in the direction of the central axis 132. Therefore, the rotational and telescopic movements of the cover plate 136 can both adjust the coverage range of the hole 135, thereby improving the flexibility of adjustment and enabling the gas dispersion device to be widely used.

[0044] Please see Figures 1 to 3 As shown, in one embodiment of this utility model, each telescopic rod 137 is, for example, multi-segmented. In this embodiment, the telescopic rod 137 is, for example, three-segmented, specifically including a first telescopic rod 1371, a second telescopic rod 1372, and a third telescopic rod 1373. One end of the first telescopic rod 1371 is connected to the central shaft 132, the other end of the first telescopic rod 1371 is connected to one end of the second telescopic rod 1372, the other end of the second telescopic rod 1372 is connected to one end of the third telescopic rod 1373, and the other end of the third telescopic rod 1373 is connected to the cover plate 136. By setting the multi-segmented telescopic rod 137, the flexibility of the telescopic rod 137 in driving the cover plate 136 to telescopically move can be improved, thus improving the practicality of the gas dispersion device.

[0045] In summary, this utility model provides a gas dispersion device and a reaction chamber. By setting a cover plate on the holes, the unexpected technical effect of this application is that the concentration distribution of gas in the reaction chamber can be freely adjusted, thereby improving the quality of semiconductor processes such as deposition or etching. Moreover, the cover plate of the gas dispersion device and reaction chamber provided by this utility model can not only rotate but also extend and retract, thereby improving the flexibility of the gas dispersion device in adjusting the gas concentration distribution in the reaction chamber, making it suitable for large-scale application.

[0046] The embodiments of this utility model disclosed above are merely illustrative of the present utility model. The embodiments do not exhaustively describe all details, nor do they limit the utility model to the specific implementations described. Obviously, many modifications and variations can be made based on the content of this specification. This specification selects and specifically describes these embodiments to better explain the principles and practical applications of this utility model, thereby enabling those skilled in the art to better understand and utilize it. This utility model is limited only by the claims and their full scope and equivalents.

Claims

1. A gas dispersion device, characterized in that, At least including: plate body; A central axis is disposed on the plate. Multiple rings of air holes are provided throughout the plate, and each ring of air holes contains multiple arrayed holes. Cover plate, movably disposed on each of the holes; and A telescopic rod connects the central shaft and the cover plate.

2. The gas dispersion device according to claim 1, characterized in that, All the cover plates and the telescopic rods are allowed to rotate and move synchronously around the central axis.

3. The gas dispersion device according to claim 1, characterized in that, All the telescopic rods are spaced apart by their orthogonal projections onto the plate.

4. The gas dispersion device according to claim 1, characterized in that, For a cover plate over one of the holes, the telescopic rod allows the cover plate to extend or retract in the hole along the direction of the central axis.

5. The gas dispersion device according to claim 1, characterized in that, The size of the cover plate is greater than or equal to the size of the hole.

6. The gas dispersion device according to claim 1, characterized in that, The spacing between two adjacent rings of air holes is greater than or equal to the size of the cover plate.

7. The gas dispersion device according to claim 1, characterized in that, The hole is circular or polygonal in shape.

8. The gas dispersion device according to claim 1, characterized in that, The array distribution can be either a circular array distribution or a rectangular array distribution.

9. The gas dispersion device according to claim 1, characterized in that, The telescopic rod includes a first telescopic rod, a second telescopic rod, and a third telescopic rod. One end of the first telescopic rod is connected to the central shaft, the other end of the first telescopic rod is connected to one end of the second telescopic rod, the other end of the second telescopic rod is connected to one end of the third telescopic rod, and the other end of the third telescopic rod is connected to the cover plate.

10. A reaction chamber, characterized in that, At least including: cavity; as well as At least one gas dispersion device as described in any one of claims 1-9 is disposed within the cavity.

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