An integrated chip heat dissipation cover plate structure

Abstract

The utility model relates to an integrated chip heat dissipation cover plate structure, including base plate and its above connection installation's top cap, wherein, the base plate and the top cap between the enclosure form sealed heat exchange chamber, the top surface integration of base plate is provided with a plurality of rib columns or fins, the top surface of base plate covers the porous layer, and the rib column or fin is worn into the porous layer, and the surface of porous layer is provided with a plurality of micro recess, and the top cap is connected and installed with the heat sink joint for cooling working medium inflow and outflow. Compared with the prior art, in the utility model, heat is introduced into the heat exchange chamber by the base plate to realize efficient heat exchange, the integrated chip heat dissipation cover plate can effectively reduce the thermal resistance, rely on phase change cooling can efficiently take away the heat of chip high-frequency work, and the heat dissipation system is integrated in the heat dissipation cover plate inside, has small volume, simple structure and the like advantages.

Description

Technical Field

[0001] This utility model relates to the field of chip heat dissipation technology, and in particular to an integrated chip heat dissipation cover structure. Background Technology

[0002] With the rapid development of microelectronic systems and integrated circuits, the integration of electronic devices is becoming increasingly higher, and miniaturization of electronic devices is becoming an inevitable trend. However, as transistor sizes continue to shrink and approach physical limits, it is becoming increasingly difficult to improve computing power simply by advancing manufacturing processes. Advanced packaging technology using 3D stacking can integrate more transistors or chips per unit area, but the stacking of multiple chips also brings about a concentration of high heat flux density and unpredictable hot spots per unit area. This poses a severe challenge to chip packaging thermal management. The continuous increase in chip integration means that more work needs to be done in a smaller space, which will generate more heat. Therefore, efficient thermal management technology is crucial for the stable operation of electronic chips.

[0003] Traditionally, heat dissipation mainly relies on air cooling and heat pipes. Air cooling improves heat dissipation through irregularly shaped fins and fan aerodynamic design, while heat pipes use copper-diamond tubing, micro heat pipes, etc. to enhance thermal conductivity. However, these heat dissipation methods have problems such as multiple thermal interfaces, high thermal resistance, and low heat exchange efficiency, which can no longer meet the heat dissipation needs of current highly integrated and high-computing-power chips. At the same time, traditional heat dissipation methods require additional auxiliary heat dissipation components such as fans and heat pipes, resulting in a large space occupation volume, making them unsuitable for space-constrained scenarios. Utility Model Content

[0004] The purpose of this invention is to overcome the defects of the prior art by providing an integrated chip heat dissipation cover structure that can meet the high heat dissipation requirements of miniaturized chips while occupying a small space.

[0005] The objective of this utility model can be achieved through the following technical solution: an integrated chip heat dissipation cover structure, including a substrate and a top cover connected and installed above it, the substrate and the top cover enclose a sealed heat exchange chamber, the top surface of the substrate is integrally provided with a number of ribs or fins, the top surface of the substrate is covered with a porous layer, the ribs or fins penetrate into the porous layer, the surface of the porous layer is provided with a number of micro-holes, and a heat sink connector for the inflow and outflow of cooling working fluid is connected and installed on the top cover.

[0006] The top cover has inlet and outlet ports for connecting and installing radiator connectors. The bottom of the top cover has a cavity area, and the base plate is located in the cavity area. The connection between the base plate and the top cover includes welding, adhesive bonding and screw connection. The upper surface of the ribs or fins on the top surface of the base plate is in direct contact with the bottom of the top cover or there is a gap. The upper surface of the ribs or fins is either in gap or in direct contact with the top cover. When there is a gap, "pool boiling" is achieved. When there is direct contact, "flow boiling" is achieved.

[0007] Furthermore, the porous layer is specifically a micro-nano porous structure, which is selected from one or more of the following: metal powder porous structure, metal wire porous structure, metal mesh porous structure, or metal foam multilayer structure. The porous layer achieves a stable porous structure through sintering, pressing, bonding, stacking, chemical deposition, or chemical etching methods.

[0008] Furthermore, the horizontal cross-sectional shape of the rib includes one or more of the following arrangements and combinations: rectangle, rounded rectangle, arc shape, circle, semicircle, triangle, trapezoid, parallelogram, ellipse, sector, T-shape, I-shape, crescent shape, teardrop shape, polygon, and pentagon.

[0009] The circumcircle diameter D1 of the horizontal projection profile of the rib is between 0 and 30 mm, including deformations with a size of 0; the height H1 of the rib is greater than 10 micrometers.

[0010] The shape features of the ribs include one or more arrangements of straight lines and wavy lines; the shape of the wavy ribs includes square waves, trapezoidal waves, triangular waves, and sine waves; the amplitude and the size of the peaks and troughs of the wavy ribs are designed and adjusted according to the local heat flux density.

[0011] The thickness Z of the rib is between 10 and 30 millimeters, and the height H2 of the rib is greater than 10 micrometers.

[0012] Furthermore, the ribs or ribs are arranged in different ways on the substrate to form multiple minimum unit regions;

[0013] The ribs are arranged in a straight line or staggered pattern on the substrate, and the two-dimensional closed space formed by connecting the centers of adjacent ribs constitutes the first minimum unit region.

[0014] The ribs on the substrate are arranged in a spaced or cross arrangement. When the ribs are spaced, the space formed by the spacing between adjacent ribs constitutes the second minimum unit region. When the ribs are cross arrangement, the two-dimensional closed space formed by the intersection of ribs in different directions constitutes the third minimum unit region.

[0015] When the ribs are wavy, the relative orientation of any ribs includes one or a combination of periodic placement and mirror placement.

[0016] The spacing between the ribs and rib plates includes uniform spacing and non-uniform spacing.

[0017] It is understandable that when the ribs are arranged in a straight line, several ribs are first arranged in a horizontal line at intervals, and then several ribs are arranged in a vertical line at intervals, forming the first smallest unit area as a rectangle with an included angle α of 90°.

[0018] When the ribs are arranged in an alternating manner, firstly, several ribs are arrayed in the horizontal direction, and then several ribs are arrayed in a staggered manner in the vertical direction to form the first smallest unit area as a parallelogram, with its acute angle α between 0° and 90°.

[0019] When the ribs are arranged in an alternating manner, specifically, several ribs are arranged in an alternating array along the same direction, the space formed by the spacing between adjacent ribs is the second smallest unit region;

[0020] When the ribs are arranged in a cross pattern, specifically, several ribs are arranged in a spaced array along two different directions. There is an arrangement spacing between adjacent ribs in the same direction. The two-dimensional closed space formed by the intersection of ribs in different directions is the third minimum unit region. This third minimum unit region is a rectangle or a parallelogram. The included angle β of the rectangle is 90°, and the acute angle β of the parallelogram is between 0° and 90°.

[0021] Preferably, the spacing between the ribs A1 and A2 is greater than 10 micrometers, and the spacing between the ribs B1 and B2 is greater than 10 micrometers. When the spacing between the ribs or ribs is uniform, A1 and A2 are equal or B1 and B2 are equal; when the spacing between the ribs or ribs is non-uniform, A1 and A2 are not equal or B1 and B2 are not equal.

[0022] Furthermore, the micro-holes are located inside or at the boundary of the smallest unit region, and the number of micro-holes in the smallest unit region is zero or one or more.

[0023] Furthermore, when there are multiple micro-holes in the smallest unit area, the arrangement of the micro-holes in the first smallest unit area includes one or more combinations of uniform array arrangement, gradually varying spacing arrangement, random arrangement, and specific pattern arrangement.

[0024] The arrangement of the micro-holes in the second smallest unit region includes one or more combinations of uniform array arrangement, gradually varying spacing arrangement, random arrangement, and specific linear arrangement.

[0025] The arrangement of the micro-holes in the third smallest unit region includes one or more combinations of uniform array arrangement, gradient spacing arrangement, random arrangement, and specific pattern arrangement.

[0026] Preferably, the minimum spacing P between the micro-holes is greater than 10 micrometers.

[0027] Furthermore, the uniform array arrangement specifically refers to the fact that the spacing P1 and P2 between two adjacent micro-holes are equal in any direction;

[0028] The gradient spacing arrangement specifically refers to the micro-hole spacing P1, P2 along different directions with the central concave hole or a designated concave hole as the origin, gradually increasing or decreasing with a set rate of change γ, where the rate of change γ ranges from 0.2 to 5.

[0029] The random arrangement specifically refers to the irregular distribution of micro-holes within the smallest unit area, forming a microstructure surface that resembles a natural distribution.

[0030] The specific pattern arrangement refers to the geometric shape formed by the lines connecting adjacent micro-holes, which adopts one or more of the following combinations: circle, ellipse, semicircle, U-shape, straight line, rectangle, triangle, trapezoid, parallelogram, polygon, H-shape, S-shape, T-shape, Z-shape, grid shape, I-shape, cross shape, and fan shape.

[0031] The specific linear arrangement refers to the number of rows of micro-holes, which may be one or more rows. The specific linear pattern includes straight lines and wavy lines. The wavy lines include one or more arrangements and combinations of square wavy lines, trapezoidal wavy lines, triangular wavy lines, and sine wavy lines. The relative orientation of any wavy lines includes one or a combination of periodic placement and mirror placement.

[0032] Preferably, the circumcircle diameter D2 of the horizontal projection shape of the micro-hole needs to be greater than 10 micrometers.

[0033] Preferably, when the micro-holes are arranged in a specific linear pattern, the minimum spacing between rows of micro-holes is greater than 10 micrometers.

[0034] Furthermore, the geometric shape of the micro-hole is one or more of the following: circle, ellipse, semicircle, arc, rectangle, rounded rectangle, triangle, trapezoid, parallelogram, polygon, S-shape, T-shape, Z-shape, X-shape, I-shape, cross-shape, pentagon, and teardrop-shaped.

[0035] Furthermore, the thickness of the porous layer is C, the height of the rib column is H1, and the height of the rib plate is H2;

[0036] When C is less than H1 or H2, the upper surface of the porous layer is lower than the upper surface of the rib column or rib sheet;

[0037] When C equals H1 or H2, the upper surface of the porous layer is flush with the upper surface of the rib column or rib sheet;

[0038] When C is greater than H1 or H2, the upper surface of the porous layer is higher than the upper surface of the rib column or rib sheet.

[0039] Understandably, the relative height of the porous layer to the fins / pillars significantly affects its heat transfer performance under different heat flux densities and operating conditions. When the porous layer height is lower than the fins / pillars, the porous layer promotes rapid transport of the working fluid through capillary action, effectively preventing localized drying. On the other hand, the fins / pillars significantly improve heat transfer efficiency by increasing the heat transfer surface area, enhancing fluid turbulence, and providing more vaporization nuclei. When the porous layer height exceeds the fins / pillars, the fins / pillars primarily function as heat conduction channels, efficiently transferring heat to the porous layer. This structural feature shortens the bubble nucleation time, thereby enhancing the phase change heat transfer capacity of the porous layer.

[0040] Furthermore, the depth of the micro-hole is N, and the thickness of the porous layer is C;

[0041] When N is less than C, the micro-hole is located inside the porous layer, and the endpoint of the micro-hole is higher than the top surface of the substrate.

[0042] When N equals C, the micro-hole passes through the porous layer, and the endpoint of the micro-hole is located on the top surface of the substrate;

[0043] When N is greater than C, the micro-holes pass through the porous layer and the top surface of the substrate, and the endpoint of the micro-holes is located inside the substrate.

[0044] It is understandable that the thickness of the porous layer in the local area will vary depending on the depth of the micropores. Deeper micropores dominate the formation of bubbles, while a thicker porous layer promotes the rewetting of the liquid in the dry area. The interaction between the two can effectively improve the heat exchange efficiency.

[0045] The above-mentioned heat dissipation cover structure is connected and installed with the chip, mainly including a lateral heat dissipation layer, a chip, a chip carrier structure, and a heat dissipation cover structure; wherein, the lateral heat dissipation layer is located between the substrate and the chip; the lateral heat dissipation layer is connected to the contact surface between the substrate and the chip by welding or by providing a thermal interface material; the connection between the top cover and the chip carrier structure includes welding, adhesive bonding, and screw connection.

[0046] The transverse heat spreader can be made of heat spreader plate, high thermal conductivity graphite film, graphene film, diamond film, boron nitride nanosheets, copper-graphite composite layer, or carbon fiber reinforced composite material.

[0047] The lateral heat dissipation layer can promote the rapid lateral diffusion of heat from local high-temperature points, which helps to solve the problems of uneven temperature and local overheating caused by high integration.

[0048] Compared with the prior art, the present invention has the following advantages:

[0049] This invention proposes a heat dissipation cover structure, including a substrate and a top cover connected and installed above it. A sealed heat exchange chamber is formed by the substrate and the top cover. Several ribs or fins are integrally formed on the top surface of the substrate, and a porous layer covers the top surface of the substrate. The ribs or fins penetrate the porous layer, and the surface of the porous layer has several micro-holes. A heat sink connector for the inflow and outflow of cooling fluid is also connected and installed on the top cover. This integrates heat dissipation function within the cover, offering advantages such as small size and simple structure. Heat from the chip is conducted to the heat exchange chamber through the substrate and carried away by the cooling fluid flowing within the chamber. The ribs or fins on the substrate and the porous layer with micro-holes effectively reduce thermal resistance, and phase change cooling efficiently removes the heat dissipated by the chip during high-frequency operation.

[0050] This invention features an integrally formed rib or fin structure on a substrate, and a porous layer with micro-recesses covering the top surface of the substrate. This enhances the heat transfer surface. The rib, fin, and micro-recessed structure effectively increase the vaporization nucleation sites of the cooling medium and accelerate bubble nucleation. It also disrupts the fluid structure and breaks down the thermal and velocity boundary layers, thereby improving the heat transfer coefficient. Furthermore, the micro-nano porous structure of the porous layer effectively accelerates liquid rewetting, reduces liquid flow resistance, and speeds up bubble detachment, preventing drying and thus increasing the critical heat flux density.

[0051] In this invention, the design of ribs or fins and micro-holes can adopt different shapes, quantities, arrangement positions and arrangements, which is conducive to realizing a multi-structure composite enhanced heat transfer surface on the substrate, thereby improving the heat transfer performance of boiling. Attached Figure Description

[0052] Figure 1 A schematic diagram of an integrated chip heat dissipation cover structure;

[0053] Figure 2 An exploded view of the integrated chip heat dissipation cover structure;

[0054] Figure 3 This is a schematic diagram of the top cover structure in this utility model;

[0055] Figure 4 This is a schematic diagram of the substrate structure in this utility model;

[0056] Figure 5This is a schematic diagram of the horizontal cross-sectional shape of the rib column in this utility model;

[0057] Figure 6 This is a schematic diagram of the shape and structure of the rib column in this utility model;

[0058] Figure 7 This is a schematic diagram of the rib arrangement in this utility model;

[0059] Figure 8 This is a schematic diagram of the rib shape and structure of the present invention;

[0060] Figure 9 This is a schematic diagram showing the relative orientation of the ribs in the present invention, which are wavy in shape.

[0061] Figure 10 This is a schematic diagram of the rib arrangement in this utility model;

[0062] Figure 11 This is a schematic diagram of the micro-recessed hole in this utility model;

[0063] Figure 12 This is a schematic diagram showing the arrangement of the micro-recesses in this utility model;

[0064] Figure 13 This is a schematic diagram of a specific pattern arrangement in this utility model;

[0065] Figure 14 This is a schematic diagram of a specific linear arrangement in this utility model;

[0066] Figure 15 This is a schematic diagram showing the relative height of the ribs or rib plates and the porous layer in this utility model;

[0067] Figure 16 This is a schematic diagram showing the micro-holes at different depths in the porous layer in this utility model;

[0068] Figure 17 This is a cross-sectional view of the integrated chip heat dissipation cover structure.

[0069] Figure 18 This is an exploded view of the integrated chip heat sink cover and chip mounting example structure in Example 2;

[0070] Figure 19 This is a cross-sectional view of the integrated chip heat sink cover and chip mounting example structure in Example 2;

[0071] Figure 20 This is an exploded view of the integrated chip heat sink cover and another example of chip mounting structure in Example 3;

[0072] Figure 21 This is a cross-sectional view of the integrated chip heat sink cover and another example of chip mounting structure in Embodiment 3;

[0073] The markings in the diagram are as follows: 1. Substrate; 11. Rib; 12. Rib; 2. Porous layer; 21. Micro-hole; 22. First smallest unit region; 23. Second smallest unit region; 24. Third smallest unit region; 3. Top cover; 31. Cooling medium inlet and outlet; 32. Cavity region; 33. Heat exchange chamber; 4. Heat sink connector; 5. Chip; 6. Chip carrier structure; 7. Lateral heat dissipation layer. Detailed Implementation

[0074] The present invention will now be described in detail with reference to the accompanying drawings and specific embodiments.

[0075] Example 1

[0076] like Figure 1-2 As shown, an integrated chip heat dissipation cover includes a substrate 1, a porous layer 2, a top cover 3, and a heat sink connector 4. The top surface of the substrate is provided with ribs 11 or ribs 12, and the surface of the porous layer 2 is provided with a plurality of micro-holes 21 and covers the top surface of the substrate 1.

[0077] like Figure 3 As shown, the top surface of the top cover 3 is provided with a cooling medium inlet and outlet 31, and the bottom of the top cover 3 is provided with a cavity area 32. The radiator connector 4 is connected to the top cover 3 through the cooling medium inlet and outlet 31, serving as the inlet and outlet of the cooling medium. In practical applications, the radiator connector 4 is selected from one of the following: a standard threaded quick-connect fitting, a pagoda fitting, a compression fitting, or a quick-tight fitting. Correspondingly, the cooling medium inlet and outlet 31 are selected as threaded holes or through holes depending on the type of radiator connector 4.

[0078] like Figure 4 As shown, the substrate 1 and the ribs 11 or fins 12 are an integral structure. The substrate 1 is located in the cavity region 32 inside the top cover 3. The sealed space formed between the substrate 1 and the top cover 3 is the heat exchange chamber 33. The connection between the substrate 1 and the top cover 3 can be achieved by welding, adhesive bonding, or screw connection. The porous layer 2 is a micro / nano porous structure covering the top surface of the substrate 1. The upper surface of the ribs 11 or fins 12 has a gap or direct contact with the top cover 3.

[0079] The structure of porous layer 2 is selected from one or more of the following: metal powder porous structure, metal wire porous structure, metal mesh porous structure or metal foam multilayer structure. The porous layer 2 structure is a stable porous structure achieved by methods such as sintering, pressing, bonding, stacking, chemical deposition, and chemical etching.

[0080] like Figure 5-6As shown, the horizontal cross-sectional shape of the rib 11 includes one or more of the following arrangements and combinations: rectangle, rounded rectangle, arc shape, circle, semicircle, triangle, trapezoid, parallelogram, ellipse, sector shape, T shape, I shape, crescent shape, teardrop shape, polygon, and pentagon.

[0081] The shape features of the rib 11 include rectangular cross-section prisms, rectangular cross-section cones, rectangular cross-section frustums, trapezoidal cross-section prisms, trapezoidal cross-section cones, trapezoidal cross-section frustums, parallelogram cross-section prisms, parallelogram cross-section cones, parallelogram cross-section frustums, triangular cross-section prisms, triangular cross-section cones, triangular cross-section frustums, circular cross-section prisms, circular cross-section cones, circular cross-section frustums, elliptical cross-section prisms, elliptical cross-section cones, elliptical cross-section frustums, and one or more arrangements of hemispherical and T-shaped shapes.

[0082] The circumcircle diameter D1 of the horizontal projected profile of rib 11 is between 0 and 30 mm, including deformations of size 0; the height H1 of rib 11 is greater than 10 micrometers.

[0083] Furthermore, the arrangement of the ribs 11 on the substrate 1 can be either linear or staggered, such as... Figure 7 As shown, the straight arrangement involves first arranging several ribs 11 at intervals along the horizontal direction, and then arranging several ribs 11 at intervals along the vertical direction to form the first minimum unit area 22, which is a rectangle with an included angle α of 90°; the staggered arrangement involves first arranging several ribs 11 at intervals along the horizontal direction, and then arranging several ribs 11 at staggered intervals along the vertical direction to form the first minimum unit area 22, which is a parallelogram with an acute angle α between 0° and 90°.

[0084] like Figure 8 As shown, the shape characteristics of the fin 12 include one or more arrangements of straight and wavy shapes; the shape of the wavy fin 12 includes square waves, trapezoidal waves, triangular waves, and sine waves. The amplitude of the wavy fin 12 is W1, the crest width is W2, and the trough width is W3. The amplitude and crest / trough sizes of the wavy fin 12 are adjusted according to the local heat flux density. The thickness Z of the fin 12 is between 10 and 30 mm, and the height H2 of the fin is greater than 10 micrometers. Figure 9 As shown, when the rib 12 is wavy, the relative orientation of any rib 12 includes one or a combination of periodic placement and mirror placement.

[0085] Furthermore, the arrangement of the ribs 12 on the substrate 1 can be either spaced apart or crossed, such as... Figure 10As shown, the spaced arrangement consists of several ribs 12 arranged in the same direction, with the space between adjacent ribs 12 forming the second minimum unit region 23; the cross arrangement consists of several ribs 12 arranged in two different directions, with the space between adjacent ribs 12 in the same direction, and the two-dimensional closed space formed by the intersection of ribs 12 in different directions forming the third minimum unit region 24. The third minimum unit region 24 is a rectangle or a parallelogram, with the included angle β of the rectangle being 90°, and the acute angle β of the parallelogram being between 0° and 90°.

[0086] In practical applications, if ribs 11 are provided on substrate 1, the spacing between the ribs 11, A1 and A2, is greater than 10 micrometers. If ribs 12 are provided on substrate 1, the spacing between the ribs 12, B1 and B2, is greater than 10 micrometers. The spacing between the ribs 11 and ribs 12 includes uniform spacing and non-uniform spacing. When the spacing between the ribs 11 or ribs 12 is uniform, A1 and A2 are equal or B1 and B2 are equal. When the spacing between the ribs 11 or ribs 12 is non-uniform, A1 and A2 are not equal or B1 and B2 are not equal.

[0087] like Figure 11 As shown, the geometric shape of the micro-hole 21 is one or more of the following: circle, ellipse, semicircle, arc, rectangle, rounded rectangle, triangle, trapezoid, parallelogram, polygon, S-shape, T-shape, Z-shape, X-shape, I-shape, cross-shape, pentagon, and teardrop-shaped.

[0088] The number, location, and arrangement of micro-holes 21 in the porous layer 2 are independent in different minimum unit regions. For example, the number of micro-holes 21 in the minimum unit regions 22, 23, and 24 can be zero or one or more. The micro-holes 21 can be located inside or on the boundary of the minimum unit regions 22, 23, and 24.

[0089] like Figure 12 As shown, when multiple micro-holes 21 are provided in the smallest unit regions 22, 23, and 24 of the porous layer 2, the arrangement of the micro-holes 21 in the first smallest unit region 22 includes one or more combinations of uniform array arrangement, gradient spacing arrangement, random arrangement, and specific pattern arrangement; the arrangement of the micro-holes 21 in the second smallest unit region 22 includes one or more combinations of uniform array arrangement, gradient spacing arrangement, random arrangement, and specific line arrangement; the arrangement of the micro-holes 21 in the third smallest unit region 24 includes one or more combinations of uniform array arrangement, gradient spacing arrangement, random arrangement, and specific pattern arrangement.

[0090] When the micro-holes 21 are arranged in a uniform array, the distances P1 and P2 between two adjacent micro-holes in any direction are equal.

[0091] When the arrangement of the micro-holes 21 is a gradually varying spacing arrangement, with the central hole or a designated hole as the origin, the hole spacing P1 and P2 along different directions gradually increase or decrease with a certain rate of change γ. The rate of change in different directions is independent of each other, and the value of the rate of change γ is between 0.2 and 5.

[0092] When the micro-holes 21 are arranged randomly, they are distributed irregularly within the smallest unit area, forming a microstructure surface that resembles a natural distribution.

[0093] like Figure 13 As shown, when the arrangement of the micro-holes 21 is a specific pattern arrangement, the geometric shape formed by the lines connecting adjacent micro-holes 21 is one or more of the following combinations: circle, ellipse, semicircle, U-shape, straight line, rectangle, triangle, trapezoid, parallelogram, polygon, H-shape, S-shape, T-shape, Z-shape, grid shape, I-shape, cross shape, and fan shape.

[0094] like Figure 14 As shown, when the arrangement of the micro-holes 21 is a specific linear arrangement, the number of rows of micro-holes 21 can be one or more; the specific linear arrangement includes straight lines and wavy lines, and the wavy lines include one or more of the following arrangements: square wavy lines, trapezoidal wavy lines, triangular wavy lines and sine wavy lines; the relative orientation of any wavy lines includes one or a combination of periodic placement and mirror placement.

[0095] In practical applications, the minimum spacing P between the micro-holes 21 is greater than 10 micrometers, and the circumcircle diameter D2 of the horizontal projection shape of the micro-holes 21 needs to be greater than 10 micrometers. When the micro-holes 21 are arranged in a specific linear pattern, the minimum spacing between rows of micro-holes 21 is greater than 10 micrometers.

[0096] like Figure 15 As shown, the thickness of the porous layer 2 is C, the height of the rib 11 is H1, and the height of the rib 12 is H2. When C is less than H1 or H2, the upper surface of the porous layer 2 is lower than the upper surface of the rib 11 or the rib 12. When C is equal to H1 or H2, the upper surface of the porous layer 2 is flush with the upper surface of the rib 11 or the rib 12. When C is greater than H1 or H2, the upper surface of the porous layer 2 is higher than the upper surface of the rib 11 or the rib 12.

[0097] like Figure 16As shown, the depth of the micro-hole 21 is N, and the thickness of the porous layer 2 is C. When N is less than C, the micro-hole 21 is located inside the porous layer 2, and the endpoint of the micro-hole 21 is higher than the top surface of the substrate 1. When N equals C, the micro-hole 21 passes through the porous layer 2, and the endpoint of the micro-hole 21 is located on the top surface of the substrate 1. When N is greater than C, the micro-hole 21 passes through both the porous layer 2 and the top surface of the substrate 1, and the endpoint of the micro-hole 21 is located inside the substrate 1.

[0098] It should be noted that the thickness of the porous layer 2 can be less than, equal to, or greater than the height of the ribs 11 or fins 12. Under different heat flux densities and operating conditions, the relative height between the porous layer 2 and the ribs 11 / fins 12 will significantly affect its heat transfer performance. When the height of the porous layer 2 is lower than that of the ribs 11 / fins 12, the porous layer promotes the rapid transport of the working fluid through capillary action, effectively avoiding localized drying. On the other hand, the ribs 11 / fins 12 significantly improve heat transfer efficiency by increasing the heat exchange surface area, enhancing fluid turbulence, and providing more vaporization nuclei. When the height of the porous layer 2 exceeds that of the ribs 11 / fins 12, the ribs 11 / fins 12 mainly function as heat conduction channels, efficiently transferring heat to the porous layer 2. This structural feature can shorten the bubble nucleation time, thereby enhancing the phase change heat transfer capacity of the porous layer.

[0099] The depth of the micro-holes 21 can be less than, equal to or greater than the thickness of the porous layer 2. The thickness of the porous layer 2 in the local area will also be different at different micro-hole depths 21. Deeper micro-holes 21 dominate the formation of bubbles, and thicker porous layer 2 promotes the rewetting of liquid in the dry area. The interaction between the two can effectively improve the heat exchange efficiency.

[0100] Furthermore, the porous layer 2 can achieve good heat exchange efficiency when the height of the cooling working fluid liquid level is higher than, parallel to, or lower than the height of the porous layer.

[0101] like Figure 17 As shown, the working principle of the integrated chip heat dissipation cover is as follows: the cooling medium enters the heat exchange chamber 33 from the heat sink connector 4 at one end, and the heat exchange efficiency is improved by the micro-reinforcement structure of the heat exchange surface on the top surface of the substrate 1. Efficient heat exchange is achieved in the heat exchange chamber 33, which removes the heat dissipated by the chip. After heat exchange, the cooling medium flows out from the heat sink connector 4 at the other end to the external pipeline, and the cycle repeats.

[0102] In the specific application of this solution, the materials of substrate 1, porous layer 2, top cover 3, and heat sink connector 4 can be selected from one of the following: copper, aluminum, aluminum alloy, stainless steel, aluminum nitride, silicon carbide, gallium nitride, plastic, ceramic, or glass. The cooling medium can be selected from one or more mixtures of water, alcohols, ammonia, hydrocarbons, refrigerants, mineral oil, transformer oil, or fluorinated liquid. In addition, the geometric features of ribs 11, fins 12, and micro-recesses 21 are not limited to the shapes mentioned above; various other shapes are also possible. The geometric features of specific pattern arrangements and specific line arrangements are also not limited to the shapes mentioned above; various other shapes are also possible.

[0103] Example 2

[0104] This embodiment applies the heat dissipation cover structure proposed in Embodiment 1, connecting and installing the heat dissipation cover structure with the chip, such as... Figures 18-19 As shown, an example of mounting an integrated chip heat sink cover and a chip is as follows, including a substrate 1, a porous layer 2, a top cover 3, a heat sink connector 4, a chip 5, and a chip carrier structure 6; the top surface of the substrate 1 is provided with ribs 11 or ribs 12, and the surface of the porous layer 2 is provided with a plurality of micro-holes 21 and covers the top surface of the substrate 1; the chip 5 is connected to the chip carrier structure 6; the chip carrier structure 6 is provided with electrical connection lines inside.

[0105] A thermal interface material is provided between chip 5 and substrate 1 to achieve tight contact between the two surfaces.

[0106] The chip carrier structure 6 and the top cover 3 can be connected by welding, adhesive bonding and screw connection.

[0107] Example 3

[0108] This embodiment applies the heat dissipation cover structure proposed in Embodiment 1, connecting and installing the heat dissipation cover structure with another chip, such as... Figures 20-21 As shown, another example of the installation of an integrated chip heat sink cover and a chip is as follows, characterized in that it includes a substrate 1, a porous layer 2, a top cover 3, a heat sink connector 4, a chip 5, a chip carrier structure 6, and a lateral heat dissipation layer 7; considering that the chip 5 has a small area, a lateral heat dissipation layer 7 can be provided between the chip 5 and the substrate 1 so that the heat emitted from the surface of the chip 5 is first evenly dispersed through the lateral heat dissipation layer 7, and then the heat is guided to the substrate 1, thereby improving the heat exchange efficiency.

[0109] A lateral heat dissipation layer 7 is disposed between the substrate 1 and the chip 5. The contact surface between the lateral heat dissipation layer 7 and the substrate 1 and the chip 5 can be connected by welding or by providing a thermal interface material.

[0110] The transverse heat spreader includes a heat spreader plate, a high thermal conductivity graphite film, a graphene film, a diamond film, boron nitride nanosheets, a copper-graphite composite layer, and a carbon fiber reinforced composite material.

[0111] In summary, this solution proposes a heat dissipation structure that integrates a heat dissipation system into the cover plate. Compared with the passive heat dissipation method of traditional package top cover, this heat dissipation cover plate can reduce thermal resistance. At the same time, through the phase change heat transfer mechanism, it can more efficiently remove the heat dissipated by the chip by utilizing the latent heat energy of phase change. It is small in size, simple in structure, and easy to maintain. This is of great practical significance for solving the high heat dissipation requirements of current miniaturized chips while reducing the size of the heat sink.

Claims

1. An integrated chip heat dissipation cover structure, characterized in that, The system includes a substrate (1) and a top cover (3) connected and installed on top of it. The substrate (1) and the top cover (3) enclose a sealed heat exchange chamber (33). The top surface of the substrate (1) is integrally provided with a number of ribs (11) or fins (12). The upper surface of the ribs (11) or fins (12) is in direct contact with the top cover (3) or there is a gap between them. The top surface of the substrate (1) is covered with a porous layer (2). The ribs (11) or fins (12) penetrate into the porous layer (2). The surface of the porous layer (2) is provided with a number of micro-holes (21). A radiator connector (4) for cooling working fluid to flow in and out is connected and installed on the top cover (3).

2. The integrated chip heat dissipation cover structure according to claim 1, characterized in that, The porous layer (2) is specifically a micro-nano porous structure. The porous layer (2) is selected from one or more of the following: metal powder porous structure, metal wire porous structure, metal mesh porous structure or metal foam multilayer structure. The porous layer (2) achieves a stable porous structure through sintering, pressing, bonding, stacking, chemical deposition or chemical etching methods.

3. The integrated chip heat dissipation cover structure according to claim 1, characterized in that, The horizontal cross-sectional shape of the rib (11) includes one or more of the following: rectangle, rounded rectangle, arc shape, circle, semicircle, triangle, trapezoid, parallelogram, ellipse, fan shape, T shape, I shape, crescent shape, teardrop shape, polygon, and pentagon. The shape features of the rib (12) include one or more arrangements of straight and wavy shapes; the shape of the wavy rib (12) includes square wave, trapezoidal wave, triangular wave and sine wave; the amplitude and the size of the peaks and valleys of the wavy rib (12) are designed and adjusted according to the local heat flux density.

4. The integrated chip heat dissipation cover structure according to claim 3, characterized in that, The ribs (11) or ribs (12) are arranged in different ways on the substrate (1) to form multiple minimum unit regions. The ribs (11) are arranged in a straight line or staggered pattern on the substrate (1), and the two-dimensional closed space formed by connecting the centers of adjacent ribs (11) constitutes the first minimum unit region (22). The ribs (12) on the substrate (1) are arranged in a spaced or cross arrangement. When the ribs (12) are arranged in a spaced arrangement, the space formed by the arrangement spacing between adjacent ribs (12) constitutes the second minimum unit region (23). When the ribs (12) are arranged in a cross arrangement, the two-dimensional closed space formed by the cross of ribs (12) in different directions constitutes the third minimum unit region (24). When the rib (12) is wavy, the relative orientation of any rib (12) includes one or a combination of periodic placement and mirror placement; The spacing between the ribs (11) and ribs (12) includes uniform spacing and non-uniform spacing.

5. The integrated chip heat dissipation cover structure according to claim 4, characterized in that, When the ribs (11) are arranged in a straight line, several ribs (11) are first arranged in a horizontal line at intervals, and then several ribs (11) are arranged in a vertical line at intervals, forming the first minimum unit area (22) as a rectangle with an included angle α of 90°. When the ribs (11) are arranged in an alternating manner, several ribs (11) are first arrayed in the horizontal direction, and then several ribs (11) are staggered in the vertical direction to form the first minimum unit area (22) which is a parallelogram with an acute angle α between 0° and 90°. When the ribs (12) are arranged in an intermittent manner, specifically, several ribs (12) are arranged in an intermittent array along the same direction, the space formed by the arrangement spacing between adjacent ribs (12) is the second smallest unit region (23); When the ribs (12) are arranged in a cross pattern, specifically, several ribs (12) are arranged in a spaced array along two different directions. There is a spacing between adjacent ribs (12) in the same direction. The two-dimensional closed space formed by the intersection of ribs (12) in different directions is the third minimum unit region (24). The third minimum unit region (24) is a rectangle or a parallelogram. The included angle β of the rectangle is 90°, and the acute angle β of the parallelogram is between 0° and 90°.

6. The integrated chip heat dissipation cover structure according to claim 4, characterized in that, The micro-holes (21) are located inside or at the boundary of the smallest unit region, and the number of micro-holes (21) in the smallest unit region is zero or one or more; When there are multiple micro-holes (21) in the minimum unit area, the arrangement of the micro-holes (21) in the first minimum unit area (22) includes one or more of the following arrangements: uniform array arrangement, gradually varying spacing arrangement, random arrangement, and specific pattern arrangement. The arrangement of the micro-holes (21) in the second smallest unit region (23) includes one or more combinations of uniform array arrangement, gradually varying spacing arrangement, random arrangement, and specific linear arrangement. The arrangement of the micro-holes (21) in the third minimum unit region (24) includes one or more combinations of uniform array arrangement, gradient spacing arrangement, random arrangement and specific pattern arrangement.

7. The integrated chip heat dissipation cover structure according to claim 6, characterized in that, The uniform array arrangement specifically refers to the fact that the spacing P1 and P2 between two adjacent micro-holes (21) in any direction are equal. The gradual spacing arrangement specifically refers to the spacing P1, P2 of the micro-holes (21) along different directions with the central concave hole or the designated concave hole as the origin, gradually increasing or decreasing with a set rate of change γ, wherein the value of the rate of change γ is between 0.2 and 5. The random arrangement specifically refers to the irregular distribution of micro-holes (21) within the smallest unit area, forming a microstructure surface similar to a natural distribution; The specific pattern arrangement refers to the geometric shape formed by the lines connecting adjacent micro-holes (21) using one or more of the following combinations: circle, ellipse, semicircle, U-shape, straight line, rectangle, triangle, trapezoid, parallelogram, polygon, H-shape, S-shape, T-shape, Z-shape, grid shape, I-shape, cross shape, and fan shape. The specific linear arrangement specifically refers to the number of rows of micro-holes (21), including one row and multiple rows. The specific linear type includes straight lines and wavy lines. The wavy lines include one or more arrangements of square wavy lines, trapezoidal wavy lines, triangular wavy lines and sine wavy lines. The relative orientation of any wavy lines includes one or a combination of periodic placement and mirror placement.

8. The integrated chip heat dissipation cover structure according to claim 1, characterized in that, The geometric shape of the micro-hole (21) is one or more of the following: circle, ellipse, semicircle, arc, rectangle, rounded rectangle, triangle, trapezoid, parallelogram, polygon, S-shape, T-shape, Z-shape, X-shape, I-shape, cross-shape, pentagon, and teardrop-shaped.

9. The integrated chip heat dissipation cover structure according to claim 1, characterized in that, The thickness of the porous layer (2) is C, the height of the rib column (11) is H1, and the height of the rib plate (12) is H2; When C is less than H1 or H2, the upper surface of the porous layer (2) is lower than the upper surface of the rib (11) or rib (12); When C equals H1 or H2, the upper surface of the porous layer (2) is flush with the upper surface of the rib column (11) or rib plate (12); When C is greater than H1 or H2, the upper surface of the porous layer (2) is higher than the upper surface of the rib column (11) or rib plate (12); The depth of the micro-hole (21) is N, and the thickness of the porous layer (2) is C; When N is less than C, the micro-hole (21) is located inside the porous layer (2), and the endpoint of the micro-hole (21) is higher than the top surface of the substrate (1); When N equals C, the micro-hole (21) passes through the porous layer (2), and the end point of the micro-hole (21) is located on the top surface of the substrate (1); When N is greater than C, the micro-hole (21) passes through the porous layer (2) and the top surface of the substrate (1), and the end point of the micro-hole (21) is located inside the substrate (1).

10. The integrated chip heat dissipation cover structure according to claim 1, characterized in that, The heat dissipation cover structure is connected and installed with the chip (5). A transverse heat dissipation layer (7) is provided between the substrate (1) and the chip (5). The transverse heat dissipation layer (7) is connected to the contact surface of the substrate (1) and the chip (5) by welding or by providing a thermal interface material. The transverse heat spreader (7) is made of heat spreader plate, high thermal conductivity graphite film, graphene film, diamond film, boron nitride nanosheets, copper-graphite composite layer or carbon fiber reinforced composite material.

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