A novel half-bridge silicon carbide module

Abstract

The utility model discloses a novel half bridge silicon carbide module, include: heat dissipation bottom plate, the upper surface fixed connection of heat dissipation bottom plate has power module and casing, the casing surrounds power module setting, the upper portion buckle connection of casing has upper cover, the upper cover is used for protecting power module, the space formed by heat dissipation bottom plate, casing and upper cover fills with silica gel, through the reasonable layout of heat dissipation bottom plate, power module, casing and upper cover, make the circuit path shorter and more regular, shorter circuit path can effectively reduce the generation of stray inductance, this helps to reduce the voltage peak of module in switching process, reduces switching loss, improves the efficiency and reliability of module.

Description

Technical Field

[0001] This utility model belongs to the field of power module technology, and specifically relates to a novel half-bridge silicon carbide module. Background Technology

[0002] Most high-current half-bridge modules on the market are packaged in ED3, but this package has excessively large stray inductance and a large overall structure, making it unsuitable for silicon carbide (SiC) chip packaging. The ED3 package was originally designed to meet the requirements of medium-to-high power levels, high reliability, and good heat dissipation. Its larger physical dimensions (e.g., its DBC carrier is approximately 260mm long and 170mm wide) provide space for internal wiring, parallel connection of multiple chips, and integrated heat dissipation structures (such as copper base plates), which is beneficial for handling high currents and heat dissipation, but also results in a large stray inductance and package size. The long current loop path inside the ED3 package leads to a high loop stray inductance. This might be acceptable for traditional silicon-based IGBTs. However, SiC MOSFETs have extremely fast switching speeds (several times faster than IGBTs), and excessively high stray inductance will generate larger voltage overshoots during rapid switching. This not only increases the voltage stress on the device and affects reliability, but also leads to greater switching losses, thus partially offsetting the high-frequency, low-loss advantages of SiC itself.

[0003] Therefore, this application provides a novel half-bridge silicon carbide module, which aims to improve the space utilization of power devices and increase power density. Utility Model Content

[0004] This invention provides a novel half-bridge silicon carbide module, which aims to solve the problems mentioned in the background art.

[0005] To solve the above-mentioned technical problems, the present invention adopts the following technical solution: A novel half-bridge silicon carbide module includes: a heat dissipation base plate, a power module and a housing fixedly connected to the upper surface of the heat dissipation base plate, the housing surrounding the power module, a top cover snapped onto the upper part of the housing, the top cover for protecting the power module, and silicone gel filling the space formed by the heat dissipation base plate, the housing and the top cover.

[0006] Furthermore, the power module includes: an AMB ceramic substrate, on the upper surface of which a current loop is etched and a plurality of chips are sintered and connected, the upper surface of each chip is sintered with DTS copper foil, the chips and the current loop are connected by bonding wires, a plurality of signal terminals are soldered and connected to the upper surface of the AMB ceramic substrate, the signal terminals are perpendicular to the AMB ceramic substrate, an AC terminal is soldered and connected to the rear side of the AMB ceramic substrate, and a DC terminal is soldered and connected to the front side. A temperature measuring circuit is provided on the current circuit, and the temperature measuring circuit includes an NTC thermistor and two signal terminals that cooperate with it.

[0007] Furthermore, the front and rear sides of the housing are provided with mating grooves, which are respectively mated with the AC terminal and the DC terminal.

[0008] Furthermore, the upper surface of the cover is provided with a plurality of clearance holes, which are used to avoid the signal terminals.

[0009] Furthermore, the lower surface edge of the housing is provided with several clamping plates, which are used to clamp the edge of the heat dissipation base plate, and the housing is glued to the heat dissipation base plate; The upper surface of the housing is provided with several claws, and the edge of the cover is provided with a groove that engages with the claws. The housing and the cover are snapped together.

[0010] Compared with the prior art, the present invention has the following technical effects: 1. The novel half-bridge silicon carbide module described in this utility model achieves a shorter and more organized circuit path through a rational layout of the heat dissipation base plate, power module, housing, and top cover. The shorter circuit path effectively reduces stray inductance, which helps reduce voltage spikes during switching, decreases switching losses, and improves module efficiency and reliability. Integrating the power module within the space formed by the heat dissipation base plate, housing, and top cover achieves a high degree of integration. This integrated design not only reduces the module's external dimensions but also improves the utilization of internal space. Compared to the loose structure of the ED3 package, this novel module has a more compact and rational structure, better meeting the needs of silicon carbide chips in high-power-density applications. Attached Figure Description

[0011] Figure 1 This is an exploded view of a novel half-bridge silicon carbide module as described in this utility model; Figure 2 This is an overall isometric view of a novel half-bridge silicon carbide module as described in this utility model; Figure 3 This is a schematic diagram of the power module of a novel half-bridge silicon carbide module as described in this utility model; Figure 4 This is a schematic diagram of the housing and top cover of a novel half-bridge silicon carbide module according to this utility model. Figure 5 This is a vertical cross-sectional schematic diagram of the heat dissipation base plate of a novel half-bridge silicon carbide module as described in this utility model; Figure 6 This is a schematic diagram of the horizontal cross-section of the heat dissipation base plate of a novel half-bridge silicon carbide module as described in this utility model; Figure 7 This is a schematic diagram of the turbulence component of a novel half-bridge silicon carbide module according to this utility model; Figure 8 This is a schematic diagram of the second rotating rod of a novel half-bridge silicon carbide module described in this utility model.

[0012] In the picture: 1. Heat dissipation base plate; 101. Cooling chamber; 102. Heat dissipation plate; 103. Mounting slot; 104. Coolant inlet; 105. Coolant outlet; 2. Power module; 201. AMB ceramic substrate; 202. Chip; 203. DTS copper foil; 204. Bonding wire; 205. Signal terminal; 206. AC terminal; 207. DC terminal; 208. NTC thermistor; 3. Housing; 301. Claw; 302. Clamping plate; 4. Top cover; 401. Clearance hole; 402. Slot; 5. Spoiler assembly; 501. T-shaped mounting bracket; 502. Telescopic groove; 503. Thermal telescopic component; 504. First rotating rod; 505. First rotating shaft; 506. First sliding groove; 507. Second rotating shaft; 508. Second rotating rod; 509. Second sliding groove; 510. Arc-shaped spoiler; 511. Third rotating shaft. Detailed Implementation

[0013] To make the objectives, technical solutions, and advantages of this utility model clearer, the technical solutions of this utility model will be clearly and completely described below with reference to specific embodiments of this application and the accompanying drawings.

[0014] like Figure 1-2 As shown, a novel half-bridge silicon carbide module includes: a heat dissipation base plate 1, a power module 2 and a housing 3 fixedly connected to the upper surface of the heat dissipation base plate 1, the housing 3 surrounding the power module 2, and a top cover 4 snapped onto the upper part of the housing 3 for protecting the power module 2. The space formed by the heat dissipation base plate 1, the housing 3 and the top cover 4 is filled with silicone gel.

[0015] The rational layout of the heat sink 1, power module 2, housing 3, and top cover 4 results in a shorter and more organized circuit path. A shorter circuit path effectively reduces stray inductance, which helps reduce voltage spikes during switching, decreases switching losses, and improves module efficiency and reliability. Integrating the power module 2 within the space formed by the heat sink 1, housing 3, and top cover 4 achieves a high degree of integration. This integrated design not only reduces the module's external dimensions but also improves the utilization of internal space. Compared to the loose structure of the ED3 package, this new module has a more compact and rational structure, better meeting the needs of silicon carbide chips in high-power-density applications.

[0016] like Figure 3 As shown, the power module 2 includes: an AMB ceramic substrate 201, on which a current loop is etched and a plurality of chips 202 are sintered and connected. A DTS copper foil 203 is sintered on the upper surface of each chip 202. The chips 202 and the current loop are connected by bonding wires 204. A plurality of signal terminals 205 are welded to the upper surface of the AMB ceramic substrate 201. The signal terminals 205 are perpendicular to the AMB ceramic substrate 201. An AC terminal 206 is welded to the rear side of the AMB ceramic substrate 201 and a DC terminal 207 is welded to the front side. A temperature measuring circuit is provided on the current circuit, and the temperature measuring circuit includes an NTC thermistor 208 and two signal terminals 205 that cooperate with it.

[0017] The AMB ceramic substrate 201 has a current loop etched onto its upper surface. This method allows for precise control of the current path, reducing disordered current flow and lowering resistance and inductance. Compared to traditional wiring methods, etching enables a finer circuit layout, thereby improving the electrical performance of the power module, reducing energy loss, and increasing module efficiency. Simultaneously, the precise current loop design helps reduce electromagnetic interference, improving module stability and reliability. Chip 202 is connected to the current loop via bonding wire 204. Bonding wire 204 possesses excellent conductivity and flexibility, accommodating thermal expansion differences between chip 202 and the substrate while ensuring electrical connection. This connection method effectively transmits current, reduces connection resistance, lowers power loss, and improves overall module performance. Furthermore, the bonding wire 204 connection method is a mature technology, facilitating mass production.

[0018] like Figure 2As shown, the front and rear sides of the housing 3 have pre-drilled grooves, which mate with the AC terminal 206 and the DC terminal 207, respectively. The design of these grooves allows the AC terminal 206 and the DC terminal 207 to fit perfectly into the housing 3, preventing the terminals from extending arbitrarily outside the housing. This results in a more compact module structure. This compact structure not only reduces the space occupied by the module, meeting the miniaturization needs of electronic devices, but also facilitates the installation and layout of the module within a limited space.

[0019] like Figure 4 As shown, the upper surface of the upper cover 4 is provided with several clearance holes 401, which are used to avoid the signal terminal 205. The design of the clearance holes 401 allows the upper cover 4 to fit tightly against the housing 3 without affecting the normal function of the signal terminal 205, maintaining the compactness of the overall module structure and improving the module's heat dissipation performance and mechanical stability.

[0020] like Figure 4 As shown, the lower surface edge of the housing 3 is provided with several clamping plates 302, which are used to clamp the edge of the heat dissipation base plate 1, and the housing 3 is glued to the heat dissipation base plate 1. The upper surface of the housing 3 is provided with a plurality of claws 301, and the edge of the upper cover 4 is provided with a groove 402 that cooperates with the claws 301. The housing 3 and the upper cover 4 are snap-fit ​​connected.

[0021] The design of the clamping plate 302 allows for quick positioning and initial fixation during the installation of the housing 3, followed by gluing. This simplifies the assembly process, improves production efficiency, and allows workers to more easily and accurately place the heat dissipation base plate in the appropriate position, reducing errors and adjustment time during assembly. The clamping plate 302 clamps the edge of the heat dissipation base plate 1, providing additional fixing force from a physical structure perspective, preventing horizontal relative displacement between the heat dissipation base plate 1 and the housing 3. This is crucial for maintaining the overall stability of the module structure in working environments with vibration or impact. The snap-fit ​​connection between the claw 301 and the slot 402 tightly fixes the top cover 4 to the housing 3, providing reliable vertical fixing force and preventing the top cover 4 from accidentally falling off during normal use.

[0022] like Figure 5-8 As shown, in another specific embodiment of this application, a cooling cavity 101 is provided inside the heat dissipation base plate 1. A coolant inlet 104 and a coolant outlet 105 are respectively opened on the front and rear sides of the cooling cavity 101. A plurality of heat dissipation plates 102 are provided on the upper surface of the cooling cavity 101. The heat dissipation plates 102 are arranged parallel to each other at intervals, and their arrangement direction is the same as the coolant flow direction.

[0023] Furthermore, the heat sink 102 is provided with a plurality of mounting slots 103, and a turbulence 5 is installed in the mounting slots 103. The turbulence 5 is used to adjust the degree of turbulence on the coolant according to the temperature of the installation location.

[0024] like Figure 7-8 The aforementioned turbulence component 5 includes: a T-shaped mounting bracket 501 installed in the mounting groove 103, the horizontal part of the T-shaped mounting bracket 501 having a telescopic groove 502, a thermally sensitive telescopic component 503 being provided in the telescopic groove 502, one end of the thermally sensitive telescopic component 503 being rotatably connected to one end of the telescopic groove 502, and the other end being rotatably connected to one end of the first rotating rod 504; The first rotating rod 504 has a first sliding groove 506 on its upper part, and the vertical part of the T-shaped mounting bracket 501 has a first rotating shaft 505. The first sliding groove 506 cooperates with the first rotating shaft 505. The lower end of the first rotating rod 504 is provided with a second rotating shaft 507. The lower end of the vertical part of the T-shaped mounting bracket 501 is rotatably connected to a second rotating rod 508 through a third rotating shaft 511. A second sliding groove 509 is provided on the second rotating rod 508. The second rotating shaft 507 cooperates with the second sliding groove 509. An arc-shaped spoiler 510 is provided on one side of the second rotating rod 508.

[0025] The heat dissipation base plate 1 has a cooling chamber 101 inside, with a coolant inlet 104 and a coolant outlet 105 on the front and rear sides respectively, allowing coolant to flow within the cooling chamber. As a heat exchange medium, the coolant continuously absorbs the heat generated by the power module during its flow, and then carries the heat away through the coolant outlet, effectively reducing the temperature of the power module and ensuring its normal and stable operation.

[0026] The thermal expansion member 503 in the turbulence assembly 5 can expand and contract according to the temperature change at the installation location. When the local temperature rises, the thermal expansion member 503 extends, causing the arc-shaped turbulence vane 510 to retract into the mounting groove 103 in the heat sink 102, reducing the disturbance to the coolant and accelerating the coolant flow rate. When the temperature drops, the thermal expansion member 503 shortens, causing the arc-shaped turbulence vane 510 to extend out of the mounting groove 103, reducing the coolant flow rate and creating stronger turbulence in the coolant, thereby increasing the heat exchange time between the coolant and the heat sink 102 and improving the utilization rate of the coolant.

[0027] This thermal sensitivity allows the turbulence component 5 to automatically adjust the degree of turbulence on the coolant according to the actual temperature conditions, preventing the coolant from flowing out of the cooling chamber 101 before sufficient heat exchange and preventing the local temperature in the cooling chamber 101 from being too high and the coolant flow rate from being too slow to carry away heat in time.

[0028] The above description is only a preferred embodiment of the present utility model. It should be noted that for those skilled in the art, several modifications and improvements can be made without departing from the inventive concept of the present utility model, and these all fall within the protection scope of the present utility model.

Claims

1. A novel half-bridge silicon carbide module, characterized in that, include: A heat dissipation base plate (1) is fixedly connected to a power module (2) and a housing (3) on its upper surface. The housing (3) is arranged around the power module (2). A top cover (4) is snapped onto the upper part of the housing (3). The top cover (4) is used to protect the power module (2). The space formed by the heat dissipation base plate (1), the housing (3) and the top cover (4) is filled with silicone gel. The power module (2) includes: an AMB ceramic substrate (201), on which a current loop is etched and a plurality of chips (202) are sintered and connected. DTS copper foil (203) is sintered on the upper surface of each chip (202). The chip (202) is connected to the current loop by a bonding wire (204). A plurality of signal terminals (205) are welded to the upper surface of the AMB ceramic substrate (201). The signal terminals (205) are perpendicular to the AMB ceramic substrate (201). An AC terminal (206) is welded to the rear side of the AMB ceramic substrate (201), and a DC terminal (207) is welded to the front side. A temperature measuring circuit is provided on the current circuit, and the temperature measuring circuit includes an NTC thermistor (208) and two signal terminals (205) that cooperate with it.

2. The novel half-bridge silicon carbide module according to claim 1, characterized in that, The housing (3) has pre-drilled grooves on its front and rear sides, which are respectively matched with the AC terminal (206) and the DC terminal (207).

3. The novel half-bridge silicon carbide module according to claim 1, characterized in that, The upper surface of the cover (4) is provided with a plurality of clearance holes (401), which are used to avoid the signal terminal (205).

4. A novel half-bridge silicon carbide module according to claim 1, characterized in that, The lower surface edge of the housing (3) is provided with several clamping plates (302), which are used to clamp the edge of the heat dissipation base plate (1), and the housing (3) is glued to the heat dissipation base plate (1). The upper surface of the housing (3) is provided with a plurality of claws (301), and the edge of the upper cover (4) is provided with a groove (402) that cooperates with the claws (301). The housing (3) and the upper cover (4) are snap-fit ​​connected.

Images