A semiconductor power module

Abstract

The utility model provides a kind of semiconductor power module, comprising: substrate, and temperature acquisition component and multiple power semiconductor devices of high voltage power side fixedly spaced in substrate;Temperature acquisition component includes enclosure, heat conduction part and temperature sensor, enclosure is fixed on substrate, and enclosure and substrate are enclosed to form with accommodation cavity, heat conduction part is arranged in accommodation cavity, temperature sensor is fixed at one end of accommodation cavity away from substrate, temperature sensor is also electrically connected with low voltage side signal processing device outside accommodation cavity;The heat conductivity of heat conduction part is greater than the heat conductivity of air.In the present application scheme, the heat conduction structure passage is enclosed by the structure such as enclosure and heat conduction part, and then the heat of substrate is transmitted to temperature sensor through the heat conduction structure passage, so as to realize temperature detection, while meeting the safety isolation requirement between high voltage power side circuit and low voltage side circuit corresponding to temperature sensor, it is also beneficial to reduce the lateral dimension of module.

Description

Technical Field

[0001] This utility model belongs to the field of new energy technology, and in particular relates to a semiconductor power module. Background Technology

[0002] A semiconductor power module is an integrated electronic component mainly composed of semiconductor devices, used for processing and controlling high-power electrical signals, and is widely used in the field of power electronics. The main power conversion devices in a semiconductor power module are typically soldered onto a substrate. To monitor the operating status of the power devices, temperature sensing devices are often soldered onto the substrate to detect their temperature. However, in many applications, sufficient physical distance is required between the temperature sensing devices and the power semiconductor devices to meet safety regulations regarding creepage distances and clearances. In related technologies, the required safety distances are relatively large for potted semiconductor power modules. Although this problem can be solved by increasing the size of the ceramic substrate, it is not conducive to reducing the lateral dimensions of the device or improving its space utilization. Utility Model Content

[0003] The technical objective of this utility model is to provide a semiconductor power module that aims to solve the problem that semiconductor power modules in related technologies are difficult to combine excellent characteristics such as safety, reliability and small size.

[0004] To solve the above-mentioned technical problems, this utility model is implemented as follows: a semiconductor power module includes: a substrate, a temperature acquisition component and a plurality of power semiconductor devices fixed to the high-voltage power side of the substrate at intervals; the temperature acquisition component includes an enclosure, a heat-conducting part and a temperature sensor, the enclosure is fixed on the substrate, and the enclosure and the substrate enclose a receiving cavity, the heat-conducting part is disposed in the receiving cavity, the temperature sensor is fixed at the end of the receiving cavity away from the substrate, and the temperature sensor is also electrically connected to a low-voltage side signal processing device outside the receiving cavity; the thermal conductivity of the heat-conducting part is greater than the thermal conductivity of air.

[0005] Furthermore, the thermal conductivity of the heat-conducting part is 1.0 W / m·K to 30.0 W / m·K.

[0006] Furthermore, the material of the heat-conducting part is one of silicon-based thermal paste, metal-based thermal paste, or carbon-based thermal paste.

[0007] Furthermore, the height of the receiving cavity is 1.2cm to 1.5cm.

[0008] Furthermore, the end of the receiving cavity away from the substrate is an open end, and the low-voltage side signal processing device includes a circuit board fixed on the open end, with a temperature sensor fixedly connected to the side of the circuit board facing the receiving cavity.

[0009] Furthermore, the open end is provided with multiple mutually spaced limiting buckles, and the circuit board has a relief opening corresponding to the limiting buckle; the limiting buckle includes an abutting part and a connecting part connecting the abutting part and the open end; each connecting part passes through the corresponding relief opening, and each abutting part is used to form an abutment with the side of the circuit board away from the receiving cavity.

[0010] Furthermore, a guide ramp is provided on the contact part.

[0011] Furthermore, a fixing member is provided at the end of the receiving cavity away from the substrate. A lead hole is provided on the fixing member. The temperature sensor is fixed on the side of the fixing member facing the receiving cavity. The wire of the temperature sensor passes through the lead hole and is electrically connected to the low-voltage side signal processing device.

[0012] Furthermore, the temperature acquisition component is fixed in the middle region of the high-voltage power side of the substrate.

[0013] Furthermore, the material of the enclosure is one of plastic, ceramic, or glass fiber reinforced composite materials.

[0014] Compared with the prior art, the semiconductor power module of this utility model has the following advantages: a dedicated temperature acquisition component is designed, that is, a structural channel is constructed through the enclosure and the heat-conducting part, and the substrate and the temperature sensor are connected through the structural channel, so that heat can be smoothly conducted to the temperature sensor to realize temperature detection; this setting can meet the safety requirements, ensure the safety and reliability of the semiconductor power module, and does not require increasing the lateral dimension of the substrate, that is, it is conducive to reducing the size of the semiconductor power module and improving the space utilization of the semiconductor power module, thereby better meeting the user's requirements for small size. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the structure of a semiconductor power module in one embodiment of this utility model;

[0016] Figure 2 This is a cross-sectional schematic diagram of a semiconductor power module in one embodiment of this utility model;

[0017] Figure 3 This is a cross-sectional schematic diagram of the temperature acquisition component in one embodiment of this utility model.

[0018] In the accompanying drawings, the reference numerals indicate: 1. substrate; 2. temperature acquisition component; 21. enclosure; 221. connecting part; 222. abutting part; 223. guide slope; 22. heat-conducting part; 23. temperature sensor; 24. circuit board; 241. clearance port; 3. power semiconductor device. Detailed Implementation

[0019] The embodiments of this utility model are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this utility model, and should not be construed as limiting this utility model. All other embodiments obtained by those skilled in the art based on the embodiments of this utility model without inventive effort are within the scope of protection of this utility model.

[0020] In the description of this utility model, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "circumferential", "radial", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.

[0021] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this utility model, "a plurality of" means two or more, unless otherwise explicitly specified.

[0022] Example:

[0023] like Figure 1-3 As shown, in this embodiment, the semiconductor power module includes: a substrate 1, a temperature acquisition component 2 and a plurality of power semiconductor devices 3 fixed to the high-voltage power side of the substrate 1 at intervals; the temperature acquisition component 2 includes an enclosure portion 21, a heat-conducting portion 22 and a temperature sensor 23, the enclosure portion 21 is fixed on the substrate 1, and the enclosure portion 21 and the substrate 1 enclose a receiving cavity, the heat-conducting portion 22 is disposed in the receiving cavity, the temperature sensor 23 is fixed at the end of the receiving cavity away from the substrate 1, and the temperature sensor 23 is also electrically connected to a low-voltage side signal processing device outside the receiving cavity; the thermal conductivity of the heat-conducting portion 22 is greater than the thermal conductivity of air.

[0024] Specifically, the semiconductor power module in this embodiment can be used to construct an IPM module. The IPM module uses three-level switching technology, combined with corresponding software control strategies, to realize the DC-to-AC inverter power conversion function, and also the AC-to-DC charging power supply main transformer primary-side inverter function. The semiconductor power module in this embodiment can be a potted semiconductor power module or a plastic-encapsulated semiconductor power module, without limitation. The substrate 1 in this embodiment can be a ceramic substrate 1. In this embodiment, a dedicated temperature acquisition component 2 is designed, that is, a structural channel is constructed through the enclosure 21 and the heat-conducting part 22, and the structural channel connects the substrate 1 and the temperature sensor 23, so that heat can be smoothly conducted to the temperature sensor 23 to realize temperature detection. This setting can meet the safety requirements, ensure the safety and reliability of the semiconductor power module, and does not require increasing the lateral dimension of the substrate 1, which is conducive to reducing the size of the semiconductor power module, thereby better meeting the user's requirements for miniaturization.

[0025] In this embodiment, the thermal conductivity of the heat-conducting part 22 is 1.0 W / m·K to 30.0 W / m·K. The high thermal conductivity of the heat-conducting part 22 results in high heat transfer efficiency, which is beneficial for improving the accuracy of temperature acquisition. Further, in some specific embodiments, the material of the heat-conducting part 22 is one of silicon-based thermal grease, metal-based thermal grease, or carbon-based thermal grease. Silicon-based thermal grease has good insulation and buffering properties and is inexpensive; metal-based thermal grease, such as grease containing silver or aluminum particles, or grease filled with liquid metal microspheres, has a high thermal conductivity and high thermal efficiency; carbon-based thermal grease, such as grease filled with graphene or carbon nanotubes, has a relatively high thermal conductivity and is lightweight. Preferably, in this embodiment, the heat-conducting part 22 is formed by filling the receiving cavity with thermally conductive silicone grease.

[0026] In this embodiment, the height of the receiving cavity is 1.2cm to 1.5cm; exemplary, the height of the receiving cavity can be 1.20cm, 1.25cm, 1.30cm, 1.35cm, 1.40cm, 1.45cm, 1.50cm, etc., and is not limited here. The temperature sensor 23 is fixed to the top of the receiving cavity, so that the receiving cavity has an appropriate height dimension, which ensures that there is a sufficient safety distance between the temperature sensor 23 and the substrate 1, while also meeting the requirements of rapid heat conduction and improved temperature detection efficiency.

[0027] In this embodiment, as Figure 2As shown, the end of the receiving cavity furthest from the substrate 1 is an open end. The low-voltage side signal processing device includes a circuit board 24 fixed on the open end, and a temperature sensor 23 is fixedly connected to the side of the circuit board 24 facing the receiving cavity. The circuit board 24 can also be connected to a user terminal or a server, either via wired or wireless communication. This allows the circuit board 24 to control the temperature sensor 23 to acquire temperature data and feed it back to the user terminal or server.

[0028] In some implementations of this embodiment, such as Figure 2 and 3 As shown, the open end is also provided with multiple mutually spaced limiting buckles, and the circuit board 24 has a relief opening 241 corresponding to the limiting buckle; the limiting buckle includes an abutment part 222 and a connecting part 221 connecting the abutment part 222 and the open end; each connecting part 221 passes through the corresponding relief opening 241, and each abutment part 222 is used to form an abutment with the side of the circuit board 24 away from the receiving cavity. Specifically, the limiting buckle and the enclosure part 21 can be integrally formed structural components, the temperature sensor 23 can be soldered onto the circuit board 24, the enclosure part 21 and the circuit board 24 are detachably connected, and multiple limiting buckles can be provided at intervals along the top of the enclosure part 21, so that the circuit board 24 can be fixed to the enclosure part 21 by a snap-fit ​​connection, and the device assembly and disassembly operation is simple. Further, as Figure 3 As shown, in some more specific embodiments, the abutment portion 222 is provided with a guide slope 223. Due to the provision of the guide slope 223, when installing the circuit board 24 after the temperature sensor 23 has been soldered, after aligning the limiting buckle with the clearance opening 241, a gentle downward force is applied directly to the circuit board 24 from above, allowing the limiting buckle to pass through the clearance opening 241 and engage with the circuit board 24, further improving the ease of device assembly. It is understood that in some other embodiments, the circuit board 24 can also be directly fixed to the top of the receiving cavity by adhesive bonding, which is not limited here.

[0029] In other embodiments of this example, a fixing member is provided at the end of the receiving cavity away from the substrate 1. The fixing member has a lead hole, and the temperature sensor 23 is fixed to the side of the fixing member facing the receiving cavity. The wire of the temperature sensor 23 passes through the lead hole and is electrically connected to the low-voltage side signal processing device. Specifically, the low-voltage side signal processing device used to control the temperature sensor 23 and process temperature data can be entirely located outside the temperature acquisition assembly 2, or it can be directly located outside the potted semiconductor power module. The fixing member and the enclosure 21 can be an integrally formed structure, or the fixing member and the enclosure 21 can be two independent connection structures; no limitation is made here.

[0030] In this embodiment, the material of the enclosure 21 is one of plastic, ceramic, or glass fiber reinforced composite material. The enclosure 21 has good mechanical support strength, high temperature resistance, and thermal conductivity, and also has good insulation properties, which can ensure sufficient safety distance between the power semiconductor device 3 and the temperature sensor 23. The plastic used to form the enclosure 21 can be ordinary plastic or high-temperature engineering plastics such as PEEK and PTFE. The ceramic can refer to highly insulating and highly thermally conductive ceramic materials such as alumina (Al2O3) and aluminum nitride (AlN), and is not limited thereto. Preferably, in this embodiment, a low-cost ordinary plastic part can be used to form the enclosure 21.

[0031] In this embodiment, the temperature acquisition component 2 is fixed in the middle region of the high-voltage power side of the substrate 1. The temperature acquisition component 2 can be placed in the middle region where the power semiconductor devices 3 are concentrated, that is, in the region where heat generation is concentrated. While ensuring that the safety distance requirements are met, the temperature of the substrate 1 can be detected more efficiently and accurately.

[0032] The above are merely preferred embodiments of the present utility model and are not intended to limit the present utility model. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A semiconductor power module, characterized in that, The device includes a substrate, a temperature acquisition component and multiple power semiconductor devices fixed to the high-voltage power side of the substrate at intervals; the temperature acquisition component includes an enclosure, a thermally conductive part and a temperature sensor, the enclosure is fixed on the substrate and the enclosure and the substrate form a receiving cavity, the thermally conductive part is disposed in the receiving cavity, the temperature sensor is fixed at the end of the receiving cavity away from the substrate, and the temperature sensor is also electrically connected to a low-voltage side signal processing device outside the receiving cavity; the thermal conductivity of the thermally conductive part is greater than that of air.

2. The semiconductor power module according to claim 1, characterized in that, The thermal conductivity of the heat-conducting part is 1.0 W / m·K to 30.0 W / m·K.

3. The semiconductor power module according to claim 2, characterized in that, The material of the heat-conducting part is one of silicon-based thermal paste, metal-based thermal paste, and carbon-based thermal paste.

4. The semiconductor power module according to claim 1, characterized in that, The height of the receiving cavity is 1.2cm to 1.5cm.

5. The semiconductor power module according to claim 1, characterized in that, The end of the receiving cavity away from the substrate is an open end. The low-voltage side signal processing device includes a circuit board fixed on the open end, and the temperature sensor is fixedly connected to the side of the circuit board facing the receiving cavity.

6. The semiconductor power module according to claim 5, characterized in that, The open end is also provided with a plurality of mutually spaced limiting buckles, and the circuit board is provided with a relief opening corresponding to the limiting buckle; the limiting buckle includes an abutting part and a connecting part connecting the abutting part and the open end; each of the connecting parts passes through the corresponding relief opening, and each of the abutting parts is used to form an abutment with the side of the circuit board away from the receiving cavity.

7. The semiconductor power module according to claim 6, characterized in that, The contact portion is provided with a guide slope.

8. The semiconductor power module according to claim 1, characterized in that, A fixing member is provided at the end of the receiving cavity away from the substrate. A lead hole is provided on the fixing member. The temperature sensor is fixed on the side of the fixing member facing the receiving cavity. The wire of the temperature sensor passes through the lead hole and is electrically connected to the low-voltage side signal processing device.

9. The semiconductor power module according to claim 1, characterized in that, The temperature acquisition component is fixed in the middle region of the high-voltage power side of the substrate.

10. The semiconductor power module according to claim 1, characterized in that, The material of the enclosure is one of plastic, ceramic, or glass fiber reinforced composite material.

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