A gas uniform structure and deposition apparatus

Abstract

The application provides a gas distribution structure and a deposition device. The gas distribution structure comprises a sealingly connected body and a connecting head, and is configured to allow gas to flow out from the bottom and the sidewall of the body after entering the body from the connecting head. The inner wall of the body forms a flared structure with a cross-sectional area gradually expanding in the axial direction. The flared structure comprises a first part, a second part and a third part connected integrally, and a plurality of first channels and a plurality of second channels. The first part is connected to the connecting head. The sidewalls of the first part, the second part and the third part have different flared angles formed in the axial direction. The first channels pass through the sidewall of the first part. The second channels pass through the sidewalls of the first part, the second part and the third part simultaneously. The first channels and the second channels are distributed alternately. The gas distribution structure improves the uniformity of the distribution of the reaction gas on the wafer surface, thereby improving the uniformity of the thin film deposited on the wafer surface.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a gas uniform structure and deposition equipment. Background Technology

[0002] Flowable chemical vapor deposition (FCVD) is a process developed to fill trenches with high aspect ratios. The FCVD process includes a deposition step and a curing step, which are performed in a deposition chamber and a curing chamber, respectively. The wafer, after deposition in the deposition chamber, is transferred to the curing chamber by a robotic arm. The film deposited in the deposition step has good flowability; to ensure good uniformity of the deposited film, the reactant gases reaching the wafer surface should be as uniform as possible.

[0003] However, in practice, it has been found that some FCVD equipment exhibits poor uniformity in the thickness of the deposited film, particularly in the inner region of the wafer (where the thickness at the center is relatively too thin). The film thickness gradually increases from the inner to the outer edge of the wafer, with significant variations. The inner region refers to the area closer to the center of the wafer.

[0004] Therefore, it is necessary to improve the FCVD equipment to enhance the uniformity of film deposition. Utility Model Content

[0005] The purpose of this application is to provide a gas uniformity structure and deposition equipment to improve the uniformity of thin film deposition on wafer surfaces.

[0006] This application provides a gas equalization structure, including: a sealed main body and a connector. The gas equalization structure is configured such that gas enters the main body from the connector and can flow out from the bottom and sidewalls of the main body. The inner wall of the main body forms a flared structure with a cross-sectional area that gradually increases along the axial direction. It includes an integrally connected first part, a second part, and a third part, as well as a plurality of first channels and a plurality of second channels. The first part is connected to the connector, and the sidewalls of the first part, the second part, and the third part have different expansion angles with respect to the axial direction. The first channels penetrate the sidewalls of the first part, and the second channels simultaneously penetrate the sidewalls of the first part, the second part, and the third part. The first channels and the second channels are alternately distributed.

[0007] In some embodiments of this application, the first channel extends from the first portion to the second portion.

[0008] In some embodiments of this application, the area of ​​the hollowed-out region formed by the first channel and the second channel penetrating the sidewall of the first part accounts for 40% to 60% of the total surface area of ​​the main body.

[0009] In some embodiments of this application, the area of ​​the hollowed-out region formed by the first channel and the second channel penetrating the sidewalls of the second and third portions accounts for 20% to 30% of the total surface area of ​​the main body.

[0010] In some embodiments of this application, the expansion angle formed by the sidewall of the first portion and the axial direction ranges from 20 degrees to 40 degrees, and the expansion angle formed by the third portion and the axial direction ranges from 50 degrees to 70 degrees.

[0011] In some embodiments of this application, the inner diameter of the connection end of the first part and the connector is in the range of 14mm to 20mm, and the maximum inner diameter of the end of the third part is 43mm to 48mm.

[0012] In some embodiments of this application, the height of the main body along the axial direction is 20mm to 30mm.

[0013] This application also provides a deposition apparatus, including a reaction chamber, the aforementioned gas equalization structure, and a spray plate. The gas equalization structure is disposed at the top of the reaction chamber, and the spray plate is located inside the reaction chamber and below the gas equalization structure.

[0014] In some embodiments of this application, the spray plate includes: a plate body, wherein at least one end face of the plate body is provided with a first air hole ring and a second air hole ring arranged sequentially along the center of the end face towards the edge; any one of the first air hole rings is composed of a plurality of uniformly distributed first air outlets; any one of the second air hole rings is composed of a plurality of uniformly distributed second air outlets, wherein the cross-sectional area of ​​the second air outlets is larger than the cross-sectional area of ​​the first air outlets; wherein the total cross-sectional area of ​​the first air outlets accounts for 0.346% to 0.373% of the total cross-sectional area of ​​the plate body, and the total cross-sectional area of ​​the second air outlets accounts for 10.3% to 11.2% of the total cross-sectional area of ​​the plate body.

[0015] In some embodiments of this application, a plurality of second air outlets are arranged in a hexagonal pattern, and a plurality of first air outlets are arranged in a circular pattern.

[0016] In some embodiments of this application, the end face includes a first region, a second region, a third region, and a fourth region arranged sequentially from the center of the end face to its edge; the length ratio of the first region, the second region, and the third region along the radial direction of the end face is (0mm~83mm):(83mm~143mm):(143mm~233mm):(233mm~293mm); the cross-sectional area ratio of the first vent to the second vent in the second region is 3.8% to 4.9%, the cross-sectional area ratio of the first vent to the second vent in the third region is 3.6% to 4.3%, and the cross-sectional area ratio of the first vent to the second vent in the fourth region is 2.2% to 2.6%.

[0017] In some embodiments of this application, the diameter of the second vent is 6 mm to 8 mm, and the diameter of the first vent is 0.5 mm to 0.9 mm.

[0018] The gas uniformity structure and deposition equipment provided in this application further improve the uniformity of the distribution of reactive gases on the wafer surface, thereby improving the uniformity of the thin film deposited on the wafer surface. Attached Figure Description

[0019] The following accompanying drawings describe in detail the exemplary embodiments disclosed in this application. The same reference numerals denote similar structures in several views of the drawings. Those skilled in the art will understand that these embodiments are non-limiting and exemplary, and the drawings are for illustrative purposes only and are not intended to limit the scope of this application. Other embodiments may similarly fulfill the inventive intent of this application. It should be understood that the drawings are not drawn to scale. Wherein: Figure 1 This is a thickness distribution diagram of a thin film deposited using a deposition apparatus employing existing technology and a deposition apparatus employing some embodiments of this application; Figure 2 This is a schematic diagram of the structure of a deposition apparatus according to some embodiments of this application; Figure 3 A schematic diagram of the gas-uniform structure according to some embodiments of this application; and Figure 4 This is a schematic diagram of the structure of a spray plate according to some embodiments of this application. Detailed Implementation

[0020] The following description provides specific application scenarios and requirements for this application, intended to enable those skilled in the art to make and use the content of this application. Various partial modifications to the disclosed embodiments will be apparent to those skilled in the art, and the general principles defined herein can be applied to other embodiments and applications without departing from the spirit and scope of this application. Therefore, this application is not limited to the embodiments shown, but rather to the widest scope consistent with the claims.

[0021] This application provides a gas-uniforming structure, including: a sealed main body and a connector. The gas-uniforming structure is configured such that gas enters the main body from the connector and can flow out from the bottom and sidewalls of the main body. The inner wall of the main body forms a flared structure with a gradually increasing cross-sectional area along the axial direction, including an integrally connected first part, a second part, and a third part, as well as a plurality of first channels and a plurality of second channels. The first part is connected to the connector, and the sidewalls of the first part, the second part, and the third part have different expansion angles with respect to the axial direction. The first channels penetrate the sidewalls of the first part, and the second channels simultaneously penetrate the sidewalls of the first part, the second part, and the third part. The first channels and the second channels are alternately distributed. In this application embodiment, the gas-uniforming structure is used, for example, to uniformly mix NH3 and O2.

[0022] The spray plate provided in this application will be described in detail below with reference to the embodiments and accompanying drawings.

[0023] refer to Figure 3 The diagram shows a schematic of the gas equalization structure provided in this application embodiment, including a sealed main body 10 and a connector 11. The gas equalization structure is configured such that gas enters the main body 10 from the connector 11 and can flow out from the bottom and sidewalls of the main body 10. The inner wall of the main body 10 forms a flared structure with a cross-sectional area that gradually increases along the axial direction, including an integrally connected first part 101, a second part 102, and a third part 103, as well as multiple first channels 104 and multiple second channels 105. The first part 101 is connected to the connector 11, and the sidewalls of the first part 101, the second part 102, and the third part 103 have different expansion angles with the axial direction. The first channel 104 penetrates the sidewall of the first part, and the second channel 105 simultaneously penetrates the sidewalls of the first part 101, the second part 102, and the third part 103. The first channel 104 and the second channel 105 are alternately distributed. In this embodiment, the axial direction is... Figure 3 The direction of the dashed line X. The flared structure described is, for example, a trumpet-shaped flare.

[0024] In some embodiments of this application, the first channel 104 may also extend from the first portion 101 to the second portion 102.

[0025] In some embodiments of this application, the first channel 104 and the second channel 105 simultaneously penetrate the sidewall of the first portion 101, and the area of ​​the hollow region formed by the first channel 104 and the second channel 105 penetrating the sidewall of the first portion 101 accounts for 40% to 60% of the total surface area of ​​the main body. In some embodiments of this application, the first channel 104 may also penetrate a portion of the sidewall of the second portion 102, and the second channel 105 may penetrate the sidewalls of the second portion 102 and the third portion 103, wherein the area of ​​the hollow region formed by the first channel 104 and the second channel 105 penetrating the sidewalls of the second portion 102 and the third portion 103 accounts for 20% to 30% of the total surface area of ​​the main body 10. Figure 3 As shown, after the gas enters the main body 10 through the connector 11, it flows along the axial direction to the bottom and sidewalls of the main body. A portion of the gas flows out from the bottom of the main body, and the other portion flows out from the first channel 104 and the second channel 105. This structure can improve the situation where the overall thickness of the film is uneven from the inside to the outside during thin film deposition in FCVD equipment.

[0026] In some embodiments of this application, the expansion angle formed by the sidewall of the first portion 101 and the axial direction ranges from 20 degrees to 40 degrees, and the expansion angle formed by the third portion 103 and the axial direction ranges from 50 degrees to 70 degrees. The expansion angle at the connection end between the second portion 102 and the first portion 101 is the same as the expansion angle formed by the sidewall of the first portion 101 and the axial direction, and the expansion angle at the connection end between the second portion 102 and the third portion 103 is the same as the expansion angle formed by the sidewall of the third portion 101 and the axial direction.

[0027] In some embodiments of this application, the inner diameter of the connection end between the first portion 101 and the connector 11 ranges from 14 mm to 20 mm, and the maximum inner diameter of the end of the third portion 103 is from 43 mm to 48 mm. In some embodiments of this application, the axial height of the main body 10 is from 20 mm to 30 mm. The precise design of the gas uniformity structure, its expansion angle, diameter, and height allows for precise control of the flow direction and velocity of the gas flowing into the gas uniformity structure, thereby making the outflowing gas from different directions and positions as uniform as possible, thus achieving the purpose of improving the uniformity of the thin film structure formed in different areas.

[0028] This application also provides a deposition apparatus, as shown in the attached document. Figure 2 As shown, it includes a reaction chamber 210, the aforementioned gas equalization structure 220, and a spray plate 230. The gas equalization structure 220 is disposed on the top of the reaction chamber 210, and the spray plate 230 is located inside the reaction chamber 210 and below the gas equalization structure 220.

[0029] In some embodiments of this application, such as Figure 4 As shown, the spray plate 230 includes: a plate body 231, wherein at least one end face of the plate body is provided with a first air hole ring 232 and a second air hole ring 233 respectively distributed sequentially from the center to the edge of the end face; each of the first air hole rings 232 is composed of a plurality of uniformly distributed first air outlets; each of the second air hole rings 233 is composed of a plurality of uniformly distributed second air outlets, wherein the cross-sectional area of ​​the second air outlets is larger than the cross-sectional area of ​​the first air outlets; wherein the total cross-sectional area of ​​the first air outlets accounts for 0.346% to 0.373% of the total cross-sectional area of ​​the plate body 231, and the total cross-sectional area of ​​the second air outlets accounts for 10.3% to 11.2% of the total cross-sectional area of ​​the plate body. In some embodiments of this application, the first air hole rings 232 and the second air hole rings 233 are respectively uniformly distributed sequentially from the center to the edge of the end face.

[0030] In some embodiments of this application, a plurality of second vents are hexagonally distributed, and a plurality of first vents are circularly distributed. In some embodiments of this application, the diameter of the second vents is 6 mm to 8 mm, and the diameter of the first vents is 0.5 mm to 0.9 mm.

[0031] In some embodiments of this application, the end face includes a first region 1, a second region 2, a third region 3, and a fourth region 4 arranged sequentially from the center of the end face to its edge; the length ratio of the first region, the second region, the third region, and the fourth region along the radial direction of the end face is (0mm~83mm):(83mm~143mm):(143mm~233mm):(233mm~293mm); the cross-sectional area ratio of the first vent to the second vent in the second region is 3.8% to 4.9%, the cross-sectional area ratio of the first vent to the second vent in the third region is 3.6% to 4.3%, and the cross-sectional area ratio of the first vent to the second vent in the fourth region is 2.2% to 2.6%. Figure 1 The figures show the thickness distribution of thin films deposited using a prior art deposition apparatus (before improvement) and a deposition apparatus using some embodiments of this application (after improvement). As can be seen from the figures, the thickness uniformity of the thin films deposited using the deposition apparatus using some embodiments of this application is greatly improved.

[0032] It should be noted that different embodiments may produce different beneficial effects. In different embodiments, the beneficial effects may be any one or a combination of the above, or any other possible beneficial effects.

[0033] The basic concepts have been described above. Obviously, for those skilled in the art, the detailed disclosure above is merely illustrative and does not constitute a limitation of this specification. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements, and corrections to this application. Such modifications, improvements, and corrections are suggested in this specification, and therefore remain within the spirit and scope of the exemplary embodiments of this application.

[0034] It should be noted that, in the description of this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; a mechanical connection or an electrical connection; a rotating connection or a sliding connection; a direct connection or an indirect connection through an intermediate medium; or the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application in light of the specific circumstances.

[0035] Furthermore, when the terms "first," "second," "third," etc., are used in this application specification to describe various features, these terms are only used to distinguish these features and should not be construed as indicating or implying the correlation or relative importance between features or implicitly indicating the number of features indicated.

[0036] In addition, this application specification describes exemplary embodiments by referring to idealized exemplary cross-sectional views and / or plan views and / or perspective views. Therefore, differences from the illustrated shapes are foreseeable due to factors such as manufacturing techniques and / or tolerances. Therefore, exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but should include deviations in shape caused, for example, by manufacturing processes. Thus, the regions shown in the figures are substantially schematic, and their shapes are not intended to illustrate the actual shapes of the regions of the device, nor to limit the scope of the exemplary embodiments.

[0037] Furthermore, this application uses specific terms to describe embodiments of this specification. For example, "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic related to at least one embodiment of this application. Therefore, it should be emphasized and noted that "an embodiment," "one embodiment," or "an alternative embodiment" mentioned twice or more in different locations in this application do not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of this application can be appropriately combined.

[0038] Similarly, it should be noted that, in order to simplify the description of the present application and thus aid in the understanding of one or more embodiments of the invention, the foregoing description of the embodiments of the present application sometimes combines multiple features into a single embodiment, drawing, or description thereof. However, this disclosure method does not imply that the subject matter of the application requires more features than those mentioned in the claims. In fact, the embodiments contain fewer features than all the features of the single embodiments disclosed above.

[0039] Finally, it should be understood that the embodiments described in this application are merely illustrative of the principles of the embodiments of this application. Other modifications may also fall within the scope of this application. Therefore, alternative configurations of the embodiments of this application are considered as examples and not limitations, and are regarded as consistent with the teachings of this application. Accordingly, the embodiments of this application are not limited to the embodiments explicitly described and illustrated in this application.

Claims

1. A gas-uniform structure, characterized in that, include: The main body and connector are sealed together. The gas distribution structure is configured such that gas can flow out from the bottom and sidewalls of the main body after entering the main body from the connector. The inner wall of the main body forms a flared structure with a cross-sectional area that gradually increases along the axial direction. It includes an integrally connected first part, second part and third part, as well as a plurality of first channels and a plurality of second channels. The first part is connected to the connector, and the sidewalls of the first part, second part and third part have different expansion angles with the axial direction. The first channel penetrates the sidewall of the first part, and the second channel penetrates the sidewalls of the first part, second part and third part at the same time. The first channel and the second channel are alternately distributed.

2. The gas-uniform structure according to claim 1, characterized in that, The first channel extends from the first portion to the second portion.

3. The gas-uniform structure according to claim 2, characterized in that, The area of ​​the hollowed-out area formed by the first channel and the second channel penetrating the sidewall of the first part accounts for 40% to 60% of the total surface area of ​​the main body.

4. The gas-uniform structure according to claim 3, characterized in that, The area of ​​the hollowed-out area formed by the first channel and the second channel penetrating the sidewalls of the second and third parts accounts for 20% to 30% of the total surface area of ​​the main body.

5. The gas-uniform structure according to claim 1, characterized in that, The expansion angle formed by the sidewall of the first part and the axial direction ranges from 20 degrees to 40 degrees, and the expansion angle formed by the third part and the axial direction ranges from 50 degrees to 70 degrees.

6. The gas-uniform structure according to claim 1, characterized in that, The inner diameter of the first part and the connection end of the connector ranges from 14mm to 20mm, and the maximum inner diameter of the end of the third part ranges from 43mm to 48mm.

7. The gas-uniform structure according to claim 1, characterized in that, The height of the main body along the axial direction is 20mm to 30mm.

8. A deposition apparatus, characterized in that, It includes a reaction chamber, a gas equalization structure as described in any one of claims 1 to 7, and a spray plate, wherein the gas equalization structure is disposed at the top of the reaction chamber, and the spray plate is located inside the reaction chamber and disposed below the gas equalization structure.

9. The deposition apparatus according to claim 8, characterized in that, The spray plate includes: The plate body has at least one end face provided with a first vent ring and a second vent ring arranged sequentially from the center to the edge of the end face; any first vent ring is composed of a plurality of uniformly distributed first vent holes; any second vent ring is composed of a plurality of uniformly distributed second vent holes, and the cross-sectional area of ​​the second vent holes is larger than the cross-sectional area of ​​the first vent holes. The total cross-sectional area of ​​the first vent hole accounts for 0.346% to 0.373% of the total cross-sectional area of ​​the plate, and the total cross-sectional area of ​​the second vent hole accounts for 10.3% to 11.2% of the total cross-sectional area of ​​the plate.

10. The deposition apparatus according to claim 9, characterized in that, The multiple second air outlets are arranged in a hexagonal pattern, and the multiple first air outlets are arranged in a circular pattern.

11. The deposition apparatus according to claim 9, characterized in that, The end face includes a first region, a second region, a third region, and a fourth region arranged sequentially from the center of the end face to the edge; the length ratio of the first region, the second region, and the third region along the radial direction of the end face is (0mm~83mm):(83mm~143mm):(143mm~233mm):(233mm~293mm); the cross-sectional area ratio of the first vent to the second vent in the second region is 3.8% to 4.9%, the cross-sectional area ratio of the first vent to the second vent in the third region is 3.6% to 4.3%, and the cross-sectional area ratio of the first vent to the second vent in the fourth region is 2.2% to 2.6%.

12. The deposition apparatus according to claim 9, characterized in that, The diameter of the second vent is 6mm to 8mm, and the diameter of the first vent is 0.5mm to 0.9mm.

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