Heating chamber and reaction chamber

Abstract

The application provides a heating chamber and a reaction chamber, and relates to the technical field of semiconductors. The heating chamber comprises an air inlet, an air outlet, a transmission port, a wafer transmission channel and a gas transmission growth chamber. The wafer transmission channel is located on one side of the gas transmission growth chamber in a first direction. The air inlet and the air outlet are respectively in communication with two sides of the gas transmission growth chamber opposite to each other in a second direction. The transmission port is in communication with one side of the wafer transmission channel in the second direction. The transmission port and the air inlet are located on the same side in the second direction. The first direction and the second direction intersect. When the heating chamber is in use, a wafer can enter the wafer transmission channel through the transmission port. Since the transmission port and the air inlet are located on the same side in the second direction, that is, the wafer enters the heating chamber through the upstream side without passing through the area where the dust-like by-products are formed. This can reduce the risk of defects on the wafer surface caused by the dust-like by-products, thereby reducing the risk of product quality decline or even scrapping.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a heating chamber and a reaction chamber. Background Technology

[0002] Epitaxial growth refers to the growth of a single crystal layer with specific requirements and the same crystal orientation as the substrate on a single crystal substrate. The reaction chamber used for epitaxial growth generally includes a heating chamber, which usually has an inlet and an outlet. The side where the inlet is located is the upstream side, and the side where the outlet is located is the downstream side. The wafer is usually placed into the heating chamber through the downstream side. The reaction gas enters the heating chamber through the inlet and reacts with the wafer. After the reaction is completed, it flows to the exhaust assembly through the outlet.

[0003] However, during the process of the reactant gas flowing from the outlet to the extraction component, the reactant gas undergoes a chemical reaction to generate dust-like byproducts. When the wafer is placed into the heating chamber downstream, the wafer passes through the area where the dust-like byproducts are formed. During this process, the falling dust-like byproducts can cause defects on the surface of the wafer, which in turn leads to a decrease in product quality or even scrapping. Utility Model Content

[0004] In view of this, this application provides a heating chamber and a reaction chamber to solve, to some extent, the problem that during the process of placing the wafer into the heating chamber from the downstream side, the wafer passes through an area where dusty byproducts are formed. In this process, the falling dusty byproducts can cause defects on the surface of the wafer, which in turn leads to a decline in product quality or even scrapping.

[0005] According to another aspect of this application, a heating chamber is provided, the heating chamber including an air inlet, an air outlet, a transmission port, a wafer transmission channel, and a gas transmission growth cavity. The wafer transmission channel is located on one side of the gas transmission growth cavity in a first direction. The air inlet and the air outlet are respectively connected to opposite sides of the gas transmission growth cavity in a second direction. The transmission port is connected to one side of the wafer transmission channel in the second direction. The transmission port and the air inlet are located on the same side in the second direction. The first direction and the second direction intersect.

[0006] Preferably, the heating chamber includes a heating chamber body and a partition assembly. The partition assembly includes a first partition plate and a second partition plate. The heating chamber body encloses a receiving cavity. The first partition plate and the second partition plate are spaced apart within the receiving cavity along the first direction. The first partition plate abuts against the inner wall of the heating chamber body on both sides of the third direction. The second partition plate abuts against the inner wall of the heating chamber body on both sides of the third direction. The gas transmission growth cavity is located between the first partition plate and the second partition plate. The third direction intersects the plane defined by the first direction and the second direction.

[0007] Preferably, the partition assembly further includes an installation mechanism, which includes two first mounting plates, which are spaced apart along the third direction, and the first mounting plates abut against the first partition plate and the second partition plate on their respective sides in the first direction.

[0008] Preferably, the first partition plate, on the side opposite to the second partition plate in the first direction, forms the wafer transfer channel with the inner wall of the heating chamber body.

[0009] Preferably, the second partition plate, on the side opposite to the first partition plate in the first direction, forms the wafer transfer channel with the inner wall of the heating chamber body.

[0010] Preferably, the heating chamber includes a plurality of mounting mechanisms, wherein the two first mounting plates in each mounting mechanism are of equal size in the first direction, and the size of the first mounting plate in one mounting mechanism in the first direction is not equal to the size of the first mounting plate in another mounting mechanism in the first direction, and the plurality of mounting mechanisms are alternatively mounted in the receiving cavity.

[0011] Preferably, the heating chamber further includes a heat insulation component that covers the heating chamber body, and the thermal conductivity of the heat insulation component is less than that of the heating chamber body.

[0012] Preferably, the heating chamber includes a first heat insulation component, a second heat insulation component, and a third heat insulation component. The first heat insulation component and the second heat insulation component are respectively disposed on both sides of the heating chamber body in the second direction, and the third heat insulation component surrounds the heating chamber. The first heat insulation component has a first communication port, and the air inlet and the transmission port are both connected to the first communication port. The second heat insulation component has a second communication port, and the air outlet is connected to the second communication port.

[0013] Preferably, the heating chamber further includes a drive assembly and a tray, the tray being used to support the wafer, the separating assembly having a moving port, and the wafer transport channel and the gas transport growth chamber being connected through the moving port; The driving component can drive the tray to move along the first direction so that the wafer can move between the wafer transport channel and the gas transport growth chamber through the moving port, and the driving component can drive the tray to rotate. Alternatively, the drive assembly may only be able to drive the tray to move along the first direction so that the wafer can move between the wafer transport channel and the gas transport growth chamber through the movement port.

[0014] Preferably, the tray includes a support portion and an outer edge portion, the outer edge portion having a mounting hole extending through the outer edge portion, the support portion being detachably mounted in the mounting hole, and the support portion being connected to the drive assembly.

[0015] According to another aspect of this application, a reaction chamber is provided, the reaction chamber including a first flange, a sealing assembly, a housing and the aforementioned heating chamber, the housing having two openings opposite each other in a second direction, the first flange and the sealing assembly respectively covering the two openings, and the heating chamber disposed inside the housing.

[0016] Preferably, the reaction chamber further includes an exhaust pipe, an air inlet assembly, and an air outlet assembly. The air inlet assembly and the air outlet assembly are both disposed inside the outer shell. The air inlet assembly surrounds an air inlet channel, and the air outlet assembly surrounds an air outlet channel. The first flange has an air inlet chamber, and the exhaust pipe is fixed to the outer wall of the sealing assembly. The two ends of the air intake channel are connected to the air inlet and the air intake chamber, respectively, and the two ends of the exhaust channel are connected to the air outlet and the exhaust pipe, respectively.

[0017] Preferably, the reaction chamber further includes a gas equalization assembly, which is disposed between the gas inlet assembly and the first flange; The gas equalization component includes multiple gas equalization plates, which are arranged at intervals along the second direction. Each gas equalization plate has multiple gas equalization grooves, which are arranged at intervals along the first direction. The gas equalization grooves on two adjacent gas equalization plates are staggered in the first direction.

[0018] Preferably, the reaction chamber includes a first support assembly, which includes two first support plates and a plurality of first support rods. The two first support plates are spaced apart along the second direction. The first support plates abut against the inner sidewall of the outer shell. The two ends of the first support rods in the second direction are respectively connected to the two first support plates. The plurality of first support rods support the heating chamber.

[0019] Preferably, the reaction chamber further includes a heating coil wound around the outer wall of the heating chamber. The heating coil is energized to induce heating in the heating chamber, and the span of the heating coil in the second direction covers the heating chamber.

[0020] When the heating chamber of this application is used, the wafer can enter the wafer transport channel through the transport port. Since the transport port and the air inlet are located on the same side in the second direction, that is, the wafer enters the heating chamber through the upstream side and no longer passes through the area where dusty by-products are formed. This can reduce the risk of defects on the wafer surface caused by dusty by-products, thereby reducing the risk of product quality degradation or even scrap. Attached Figure Description

[0021] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 A three-dimensional structural diagram of the heating chamber is shown; Figure 2 A cross-sectional view of the heating chamber is shown; Figure 3 A schematic diagram of the structure of the heating chamber body is shown; Figure 4 A schematic diagram of the separator component is shown; Figure 5 A schematic diagram of the first partition plate is shown; Figure 6 A schematic diagram of the second mounting plate is shown. Figure 7 A schematic diagram of the tray structure is shown; Figure 8 A schematic diagram of the reaction chamber is shown. Figure 9 A cross-sectional view of the reaction chamber is shown; Figure 10 A partial structural schematic diagram of the reaction chamber is shown; Figure 11A schematic diagram of the third support component is shown; Figure 12 A schematic diagram of the air outlet assembly is shown. Figure 13 A three-dimensional structural diagram of the intake assembly is shown; Figure 14 A cross-sectional view of the intake assembly is shown.

[0023] Icons: 1-Heating chamber; 11-Wafer transport channel; 12-Gas transport growth chamber; 13-Heating chamber body; 131-Limiting groove; 14-Separation assembly; 141-First partition plate; 1411-Main body; 1412-Extension; 1413-Protrusion; 142-Second partition plate; 143-First mounting plate; 144-Moving port; 15-Second mounting plate; 151-Slot; 16-Tray; 161-Bracket; 162-Support; 163-Outer edge; 171-First heat insulation component; 172-Second heat insulation component; 173-Third heat insulation component; 1731-First wrapping part; 1732-Second wrapping part; 174-First connecting port; 175-Second connecting port; 181-Connecting hole; 182-Temperature measuring hole; 2-First flange; 21-Air inlet chamber; 3-Sealing assembly; 31-Second flange; 32-Third flange; 41-Outer shell; 42-Air inlet assembly; 421-First side plate; 4211-First plate part; 4212-Second 4213-Third plate; 422-Second side plate; 4221-Fourth plate; 4222-Fifth plate; 4223-Sixth plate; 423-Intake channel; 43-Outtake assembly; 431-First exhaust component; 432-Second exhaust component; 433-Exhaust channel; 44-Air distribution plate; 45-Conveying assembly; 451-First enclosure; 452-Second enclosure; 453-Pick-up and drop-off channel; 46-Exhaust pipe; 51-First support assembly; 511-First support Plate; 512-First support rod; 513-Stabilizing plate; 514-Stabilizing rod; 515-Limiting hole; 52-Second support assembly; 521-Second support plate; 522-Second support rod; 53-Third support assembly; 531-Third support plate; 532-Third support rod; 54-Adapter assembly; 541-Support ring; 542-Abutting plate; 6-First sealing ring; 7-Heating coil; 81-Transmission rod; L1-First direction; L2-Second direction; L3-Third direction. Detailed Implementation

[0024] The following detailed embodiments are provided to help the reader gain a comprehensive understanding of the methods, apparatus, and / or systems described herein. However, various changes, modifications, and equivalents of the methods, apparatus, and / or systems described herein will be apparent after understanding the disclosure of this application. For example, the order of operations described herein is merely illustrative and is not limited to the order set forth herein; changes that will be apparent after understanding the disclosure of this application are possible, except for operations that must occur in a specific order. Furthermore, for clarity and brevity, descriptions of features known in the art may be omitted.

[0025] The features described herein may be implemented in different forms and should not be construed as being limited to the examples described herein. Rather, the examples described herein have been provided merely to illustrate some of the many feasible ways of implementing the methods, apparatus, and / or systems described herein that will be apparent upon understanding the disclosure of this application.

[0026] Throughout the specification, when an element (such as a layer, region, or substrate) is described as being "on" another element, "connected to" another element, "bonded to" another element, "on" another element, or "covering" another element, it may be directly "on" another element, "connected to" another element, "bonded to" another element, "on" another element, or "covering" another element, or there may be one or more other elements in between. In contrast, when an element is described as being "directly on" another element, "directly connected to" another element, "directly bonded to" another element, "directly on" another element, or "directly covering" another element, there may be no other elements in between.

[0027] As used herein, the term “and / or” includes any one of the relevant items listed and any combination of any two or more items.

[0028] Although terms such as “first,” “second,” and “third” may be used herein to describe individual components, assemblies, regions, layers, or parts, these components, assemblies, regions, layers, or parts are not limited by these terms. Rather, these terms are used only to distinguish one component, assembly, region, layer, or part from another. Therefore, without departing from the teachings of the examples described herein, the first component, assembly, region, layer, or part referred to as the second component, assembly, region, layer, or part may also be referred to as the second component, assembly, region, layer, or part.

[0029] For ease of description, spatial relation terms such as “above,” “upper,” “below,” and “lower” are used herein to describe the relationship between one element and another, as shown in the accompanying drawings. Such spatial relation terms are intended to include not only the orientation depicted in the drawings but also different orientations of the device during use or operation. For example, if the device in the drawings is flipped, an element described as being “above” or “upper” relative to another element will subsequently be “below” or “lower” relative to that other element. Therefore, the term “above” includes both “above” and “below” orientations depending on the spatial orientation of the device. The device may also be positioned in other ways (e.g., rotated 90 degrees or in other orientations), and the spatial relation terms used herein will be interpreted accordingly.

[0030] The terminology used herein is for the purpose of describing various examples only and is not intended to limit this disclosure. Unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. The terms “comprising,” “including,” and “having” enumerate the stated features, quantities, operations, components, elements, and / or combinations thereof, but do not exclude the presence or addition of one or more other features, quantities, operations, components, elements, and / or combinations thereof.

[0031] Variations in the shapes shown in the accompanying drawings may occur due to manufacturing techniques and / or tolerances. Therefore, the examples described herein are not limited to the specific shapes shown in the accompanying drawings, but include changes in shape that may occur during manufacturing.

[0032] The features of the examples described herein can be combined in various ways that will be apparent upon understanding the disclosure of this application. Furthermore, although the examples described herein have a wide variety of constructions, other constructions are possible, as will be apparent upon understanding the disclosure of this application.

[0033] The following will combine Figures 1 to 12 The heating chamber 1 and the reaction chamber are described below. Figures 1 to 12 In the middle, the first direction L1 intersects with the second direction L2, and the third direction L3 intersects with the plane determined by the first direction L1 and the second direction L2. The intersection is preferably perpendicular. The following will describe the heating chamber 1 and the reaction chamber in combination with the case that the first direction L1, the second direction L2 and the third direction L3 are perpendicular to each other.

[0034] According to one aspect of this application, a heating chamber 1 is provided, such as... Figures 1 to 7As shown, the heating chamber 1 includes an air inlet, an air outlet, a transfer port, a wafer transfer channel 11, and a gas transfer growth chamber 12. The wafer transfer channel 11 is located on one side of the gas transfer growth chamber 12 in the first direction L1. The air inlet and air outlet are respectively connected to opposite sides of the gas transfer growth chamber 12 in the second direction L2. The transfer port is connected to one side of the wafer transfer channel 11 in the second direction L2, and the transfer port and the air inlet are located on the same side of the second direction L2. When the heating chamber 1 is in use, the wafer can enter the wafer transfer channel 11 through the transfer port. Since the transfer port and the air inlet are located on the same side of the second direction L2, that is, the wafer enters the heating chamber 1 from the upstream side and no longer passes through the area where dusty by-products are formed. This can reduce the risk of defects on the wafer surface caused by dusty by-products, thereby reducing the risk of product quality degradation or even scrap.

[0035] It should be noted that the upstream side here, as well as the downstream side below which is opposite to the upstream side, are determined based on the flow direction of the reactant gas. The side through which the reactant gas flows first is the upstream side, and the other side is the downstream side.

[0036] In addition, the dimensions of the gas outlet and gas inlet on the third-direction L3 are both larger than the dimensions of the wafer on the third-direction L3, to ensure that all parts of the wafer can fully react with the reactive gas.

[0037] In an embodiment of this application, the heating chamber 1 includes a heating chamber body 13 and a partition assembly 14. The partition assembly 14 includes a first partition plate 141 and a second partition plate 142. The heating chamber body 13 encloses a receiving cavity. The first partition plate 141 and the second partition plate 142 are spaced apart within the receiving cavity along a first direction L1. The first partition plate 141 is located above the second partition plate 142. Both sides of the first partition plate 141 abut against the inner sidewall of the heating chamber body 13 in a third direction L3. Both sides of the second partition plate 142 abut against the inner sidewall of the heating chamber body 13 in a third direction L3. The gas transmission growth chamber 12 is located between the first partition plate 141 and the second partition plate 142. Optionally, both the first partition plate 141 and the second partition plate 142 are graphite plates.

[0038] Furthermore, the wafer transport channel 11 can be located below or above the gas transport growth chamber 12, and the relative position of the wafer transport channel 11 and the gas transport growth chamber 12 can be selected based on requirements. When the wafer transport channel 11 is located above the gas transport growth chamber 12, the first partition plate 141, on the side facing away from the second partition plate 142 in the first direction L1, and the inner wall of the heating chamber body 13 enclose the wafer transport channel 11; when the wafer transport channel 11 is located below the gas transport growth chamber 12, such as Figure 2As shown, the second partition plate 142, on the side opposite to the first partition plate 141 in the first direction L1, forms a wafer transfer channel 11 with the inner wall of the heating chamber body 13.

[0039] In the heating chamber 1 of this application, the partition assembly 14 may or may not include an installation mechanism. When the partition assembly 14 does not include an installation mechanism, the first partition plate 141, the second partition plate 142, and the inner wall of the heating chamber body 13 enclose a gas transmission growth chamber 12. When the partition assembly 14 includes an installation mechanism, such as... Figure 3 and Figure 4 As shown, the mounting mechanism includes two first mounting plates 143, which are spaced apart along a third direction L3. The first mounting plates 143 abut against the first partition plate 141 and the second partition plate 142 on both sides of the first direction L1, respectively. At this time, the first partition plate 141, the second partition plate 142 and the two first mounting plates 143 enclose a gas transmission growth chamber 12.

[0040] Optionally, two embedding slots are provided on the inner side wall of the heating chamber body 13. The two embedding slots face each other on the third direction L3. The second partition plate 142 is inserted into the two embedding slots on both sides of the third direction L3, thereby fixing the second partition plate 142.

[0041] Furthermore, the distance between the first partition plate 141 and the second partition plate 142 can be adjusted to meet different wafer processing requirements. When the partition assembly 14 includes mounting mechanisms, the heating chamber 1 can be matched with multiple mounting mechanisms. In each mounting mechanism, the two first mounting plates 143 have equal dimensions in the first direction L1, but the dimensions of the first mounting plates 143 in one mounting mechanism are not equal to those in another mounting mechanism. Thus, by changing different mounting mechanisms, the position of the first partition plate 141 can be adjusted, causing the distance between the first partition plate 141 and the second partition plate 142 to change, thereby adjusting the cross-sectional area of ​​the reaction gas flow in the gas transport growth chamber 12 to meet different wafer processing requirements. Optionally, multiple mounting mechanisms may correspond to one first partition plate 141, or each mounting mechanism may correspond to one first partition plate 141. For example, when the cross-section of the heating chamber body 13 perpendicular to the second direction L2 is circular, each mounting mechanism corresponds to one second partition plate 142, and different first partition plates 141 have different dimensions in the third direction L3; as another example, when the cross-section of the heating chamber body 13 perpendicular to the second direction L2 is rectangular, multiple mounting mechanisms correspond to one first partition plate 141.

[0042] When the partition assembly 14 does not include the mounting mechanism, multiple limiting grooves 131 are provided on the inner sidewall of the heating chamber body 13. These limiting grooves 131 are divided into multiple groups, each group including two limiting grooves 131. The two limiting grooves 131 in each group are opposite each other in the third direction L3. The multiple groups of limiting grooves 131 are arranged at intervals along the first direction L1. The two ends of the first partition plate 141 in the third direction L3 are respectively inserted into two limiting grooves 131 in the corresponding group. Thus, by inserting the first partition plate 141 into different groups of limiting grooves 131, the distance between the first partition plate 141 and the second partition plate 142 can be adjusted, thereby adjusting the cross-sectional area of ​​the reaction gas flow in the gas transmission growth chamber 12 to meet different wafer processing requirements. Optionally, multiple mounting mechanisms may correspond to one first partition plate 141, or each mounting mechanism may correspond to one first partition plate 141. For example, when the section of the heating chamber body 13 perpendicular to the second direction L2 is circular, each mounting mechanism corresponds to one first partition plate 141, and different first partition plates 141 have different dimensions in the third direction L3; as another example, when the section of the heating chamber body 13 perpendicular to the second direction L2 is rectangular, multiple mounting mechanisms correspond to one first partition plate 141.

[0043] Optionally, such as Figure 5 As shown, the first partition plate 141 may include a main body 1411 and two extensions 1412. The two extensions 1412 are respectively connected to the two sides of the main body 1411 in the third direction L3. The extensions 1412 are disposed on the side of the main body 1411 in the second direction L2 near the air outlet. The two extensions 1412 are respectively disposed in two limiting grooves 131. The entire first partition plate 141 is integrally formed.

[0044] In addition, the heating chamber 1 may also include two second mounting plates 15. Two support plates may be provided on the inner sidewall of the heating chamber body 13 near the air inlet, and two support plates may also be provided on the end near the air outlet, thereby supporting the two second mounting plates 15. For example... Figure 6 As shown, at least one second mounting plate 15 has multiple slots 151, which are spaced apart along the first direction L1. The end of the first mounting plate 143 in the second direction L2 is inserted into one slot 151. When the first partition plate 141 is installed in different positions, it can be inserted into different slots 151 to fix the first partition plate 141 in the second direction L2. Optionally, slots 151 can be provided only on the second mounting plate 15 near the air inlet, only on the second mounting plate 15 near the air outlet, or on both second mounting plates 15. Preferably, slots 151 are provided only on the second mounting plate 15 near the air inlet.

[0045] When the slot 151 is opened only on the second mounting plate 15 on the side where the air inlet is located, the first mounting plate 143 also includes a protrusion 1413, which protrudes from the main body 1411 on one side in the second direction L2 and is inserted into the slot 151.

[0046] Furthermore, when the partition assembly 14 includes a mounting mechanism, the two first mounting plates 143 in the mounting mechanism can support the first partition plate 141, and the first partition plate 141 can be fixed without the slot 151. In this case, the heating chamber 1 may not be provided with a second mounting plate 15, and the first partition plate 141 does not include the protrusion 1413.

[0047] In the embodiments of this application, such as Figure 1 , Figure 2 , Figure 4 and Figure 7 As shown, the heating chamber 1 also includes a drive assembly and a tray 16. The tray 16 supports the wafer. The separator assembly 14 has a moving port 144. The wafer transport channel 11 and the gas transport growth chamber 12 are connected through the moving port 144. The drive assembly can drive the tray 16 to move, allowing the wafer to move between the wafer transport channel 11 and the gas transport growth chamber 12 through the moving port 144. Thus, when the tray 16 is located in the wafer transport channel 11, a robot can place the wafer in the tray 16. Then, the drive assembly can drive the tray 16 to move along the first direction L1, so that the wafer can enter the gas transport growth chamber 12 through the moving port 144, thereby allowing the wafer to react with the reaction gas in the gas transport growth chamber 12. After the reaction is completed, the drive assembly can drive the tray 16 to move along the first direction L1, so that the wafer can enter the wafer transport channel 11 through the moving port 144. At this time, the wafer can be removed by the robot.

[0048] Optionally, the drive assembly may only be able to drive the tray 16 to move along the first direction L1, or the drive assembly may be able to rotate while driving the tray 16 to move along the first direction L1. The tray 16 can rotate while carrying the wafer, allowing the wafer to react with the reactive gas within the gas transport growth chamber 12. This can improve the uniformity of the reaction between the wafer and the reactive gas.

[0049] Alternatively, the drive component can be a robotic arm.

[0050] When the wafer transport channel 11 is above the gas transport growth chamber 12, a transport port is provided on the first partition plate 141. At this time, a clearance notch can be provided on the second partition plate 142. When the tray 16 moves into the clearance notch, the tray 16 stops moving, allowing the wafer to react with the reactive gas in the gas transport growth chamber 12. When the wafer transport channel 11 is below the gas transport growth chamber 12, a moving port 144 is provided on the second partition plate 142. When the tray 16 moves to the point where it is within the moving port 144, the tray 16 stops moving, allowing the wafer to react with the reactive gas in the gas transport growth chamber 12.

[0051] like Figure 2 As shown, the heating chamber 1 has a connection hole 181 that penetrates the bottom of the heating chamber body 13 and the second enclosure portion 1732 described below. The tray 16 includes a bracket 161, a support portion 162, and an outer edge portion 163. The outer edge portion 163 has a mounting hole that penetrates the outer edge portion 163. The support portion 162 is detachably installed in the mounting hole and is connected to the bracket 161. The transmission rod 81 of the drive assembly is connected to the bracket 161. Since the edge of the tray 16 is easily contaminated by the epitaxial growth gas during the wafer epitaxial growth process, when the edge of the tray 16 is contaminated, the outer edge portion 163 can be replaced without replacing the support portion 162, which can reduce the cost of wafer processing.

[0052] In addition, the support portion 162 and the outer edge portion 163 can also be integrally formed.

[0053] In embodiments of this application, the heating chamber 1 further includes a heat insulation component that covers the heating chamber body 13. The thermal conductivity of the heat insulation component is lower than that of the heating chamber body 13. Thus, the heat insulation component reduces the rate at which heat generated within the heating chamber body 13 diffuses to the outside, thereby ensuring that the wafer reacts with the reactive gas at high temperatures.

[0054] Furthermore, such as Figure 1 and Figure 2As shown, the heating chamber 1 includes a first heat insulation component 171, a second heat insulation component 172, and a third heat insulation component 173. The first heat insulation component 171 and the second heat insulation component 172 are respectively disposed on both sides of the heating chamber body 13 in the second direction L2, and the third heat insulation component 173 surrounds the heating chamber 1. The first heat insulation component 171 has a first connecting port 174, and both the air inlet and the transmission port are connected to the first connecting port 174. The second heat insulation component 172 has a second connecting port 175, and the air outlet is connected to the second connecting port 175. In this way, the air intake component 42 enters into the first connecting port 174, thereby connecting the air intake channel 423 formed by the air intake component 42 with the air inlet of the gas transmission growth chamber 12 to supply reaction gas into the gas transmission growth chamber 12. The robot can enter and exit the wafer transmission channel 11 through the first connecting port 174 and the transmission port to realize the picking and placing of wafers.

[0055] Optionally, the third heat insulation component 173 includes a first wrapping portion 1731 and a second wrapping portion 1732. The first wrapping portion 1731 and the second wrapping portion 1732 respectively cover the heating chamber body 13 from both sides in the first direction L1. The first wrapping portion 1731 has a first connecting end and a second connecting end, and the second wrapping portion 1732 has a third connecting end and a fourth connecting end. One of the first connecting end and the third connecting end has a notch, and the other has a protrusion, which is embedded in the notch. Similarly, one of the second connecting end and the fourth connecting end has a notch, and the other has a protrusion, which is embedded in the notch. In this way, the first wrapping portion 1731 and the second wrapping portion 1732 cooperate in the form of a protrusion and a notch, which can improve the ease of installation between the first wrapping portion 1731 and the second wrapping portion 1732.

[0056] Optionally, the first wrapping part 1731, the second wrapping part 1732, the first heat insulation member 171, and the second heat insulation member 172 are all made of graphite felt.

[0057] Furthermore, the heating chamber 1 has at least one temperature measuring hole 182, which extends from the end of the heating chamber 1 in the second direction L2 into the heating chamber body 13. The temperature measuring hole 182 is used to cooperate with an infrared temperature sensor mounted on the first flange 2 described below to detect the temperature of the heating chamber body 13.

[0058] Optionally, the temperature measuring hole 182 consists of a hole penetrating the first heat insulation member 171 and a hole extending from the end face of the self-heating chamber body 13 to the middle of the heating chamber body 13.

[0059] According to another aspect of this application, a reaction chamber is provided, such as... Figures 8 to 12As shown, the reaction chamber includes a first flange 2, a sealing assembly 3, a housing 41, and the aforementioned heating chamber 1. The housing 41 has two openings that are opposite to each other in the second direction L2. The first flange 2 and the sealing assembly 3 are respectively covered on the two openings. The heating chamber 1 is disposed inside the housing 41.

[0060] In addition, the sealing assembly 3 includes a second flange 31 and a third flange 32. The second flange 31 is fixed to the end of the housing 41 opposite to the first flange 2 in the second direction L2, and the side of the second flange 31 opposite to the first flange 2 is open. The third flange 32 is fixed to the side of the second flange 31 opposite to the housing 41 in the second direction L2.

[0061] like Figure 9 As shown, the reaction chamber also includes an exhaust pipe 46, an inlet assembly 42, and an outlet assembly 43. Both the inlet assembly 42 and the outlet assembly 43 are located inside the outer casing 41. The inlet assembly 42 surrounds an inlet channel 423, and the outlet assembly 43 surrounds an exhaust channel 433. The first flange 2 has an inlet chamber 21, and the exhaust pipe 46 is fixed to the outer wall of the second flange 31. The two ends of the inlet channel 423 are connected to the inlet port and the inlet chamber 21, respectively, and the two ends of the exhaust channel 433 are connected to the outlet port and the exhaust pipe 46, respectively. Thus, gas enters the gas transport growth chamber 12 through the inlet channel 423 and then flows to the exhaust pipe 46 through the exhaust channel 433. This minimizes the escape of reactive gas to the outside of the gas transport growth chamber 12, thereby further reducing the risk of wafer surface defects caused by dusty byproducts.

[0062] like Figure 10 As shown, the intake assembly 42 includes two first side plates 421 and two second side plates 422. The two first side plates 421 are arranged at intervals along the first direction L1. One end of the first side plate 421 in the second direction L2 extends into the first connecting port 174 and abuts against the first partition plate 141. The other end of the first side plate 421 in the second direction L2 abuts against the first flange 2. One end of the second side plate 421 in the second direction L2 extends into the first connecting port 174 and abuts against the second partition plate 142. The other end of the second side plate 421 in the second direction L2 abuts against the first flange 2. Two second side plates 422 are arranged at intervals along the third direction L3. The two sides of the second side plates 422 abut against the two first side plates 421 respectively in the first direction L1. One end of the second side plate 422 abuts against the first flange 2 in the second direction L2. The other end of the second side plate 422 abuts against the first mounting plate 143 in the second direction L2. The two first side plates 421 and the two second side plates 422 form an air intake channel 423.

[0063] Optionally, such as Figure 13 and Figure 14As shown, the first side plate 421 includes a first plate portion 4211, a second plate portion 4212, and a third plate portion 4213 connected in sequence. A notch is formed at one end of the first plate portion 4211 near the second plate portion 4212, and a protrusion is formed at one end of the second plate portion 4212 near the first plate portion 4211, the protrusion being embedded in the notch. A notch is formed at one end of the second plate portion 4212 near the third plate portion 4213, and a protrusion is formed at one end of the third plate portion 4213 near the second plate portion 4212, the protrusion being disposed within the notch. A notch is formed on the side of the third plate portion 4213 near the partition assembly 14. Protrusions are formed at the ends of the first partition plate 141 and the second partition plate 142 near the air intake assembly 42, and the protrusions on the first partition plate 141 and the second partition plate 142 are respectively disposed within the notches on the two third plate portions 4213. The second side plate 422 includes a fourth plate portion 4221, a fifth plate portion 4222, and a sixth plate portion 4223 connected in sequence. A notch is formed at the end of the fourth plate portion 4221 near the fifth plate portion 4222, and a protrusion is formed at the end of the fifth plate portion 4222 near the fourth plate portion 4221, the protrusion being embedded in the notch. A notch is formed at the end of the fifth plate portion 4222 near the sixth plate portion 4223, and a protrusion is formed at the end of the sixth plate portion 4223 near the fifth plate portion 4222, the protrusion being disposed within the notch. A notch is formed on the side of the sixth plate portion 4223 near the partition assembly 14, and protrusions are formed at the ends of the first mounting plate 143 near the air intake assembly 42, the first mounting plate 143 being disposed within the notch on the sixth plate portion 4223.

[0064] Preferably, the first plate portion 4211, the second plate portion 4212, the fourth plate portion 4221 and the fifth plate portion 4222 are quartz plates, and the third plate portion 4213 and the sixth plate portion 4223 are graphite plates.

[0065] Furthermore, the reaction chamber also includes a gas equalization assembly, which is disposed between the inlet assembly 42 and the first flange 2. The gas equalization assembly includes multiple gas equalization plates 44, which are arranged at intervals along the second direction L2. Each gas equalization plate 44 has multiple gas equalization grooves, which are arranged at intervals along the first direction L1. The gas equalization grooves on two adjacent gas equalization plates 44 are staggered in the first direction L1. Thus, when the reaction gas flows through the gas equalization plates 44, the reaction gas passes through multiple gas equalization grooves, and the staggered positions of the gas equalization grooves on two adjacent gas equalization plates 44 in the first direction L1 can improve the uniformity of the reaction gas flowing into the inlet channel 423.

[0066] Optionally, the reaction chamber further includes a conveying assembly 45, which includes a first enclosure plate 451 and two second enclosure plates 452. One end of the first enclosure plate 451 in the second direction L2 abuts against the first heat insulation member 171, and the other end of the first enclosure plate 451 in the second direction L2 abuts against the first flange 2. The two ends of the second enclosure plates 452 in the first direction L1 abut against the air intake assembly 42 and the first enclosure plate 451, respectively. The two second enclosure plates 452 are arranged at intervals along the third direction L3. The first enclosure plate 451, the two second enclosure plates 452 and the air intake assembly 42 form a pick-and-place channel 453. The first flange 2 has a placement port. One end of the pick-and-place channel 453 is connected to the placement port, and the other end is connected to the wafer transport channel 11.

[0067] In the embodiments of this application, such as Figure 9 As shown, the exhaust assembly 43 includes a first mounting end and a second mounting end. The first mounting end abuts against the second heat insulation member 172, and the second mounting end is connected to the exhaust pipe 46. The first mounting end has a connecting port. The size of the connecting port in the third direction L3 is larger than the size of the second connecting port 175 in the third direction L3. The size of the connecting port in the first direction L1 is larger than the size of the second connecting port 175 in the first direction L1, so as to ensure that the exhaust assembly 43 can completely cover the second connecting port 175, thereby reducing the overflow of the reaction gas.

[0068] like Figure 12 As shown, the gas outlet assembly 43 includes a first gas outlet 431 and a second gas outlet 432 connected to each other. The first mounting end is the end of the first gas outlet 431 facing away from the second gas outlet 432, and the second mounting end is the end of the second gas outlet 432 facing away from the first gas outlet 431. The first gas outlet 431 abuts against the second heat insulation member 172, and the second gas outlet 432 is connected to the exhaust pipe 46. In the direction from the air inlet to the air outlet, the size of the first gas outlet 431 gradually decreases in the third direction L3, and the second gas outlet 432 is cylindrical. In this way, the first gas outlet 431 gradually narrows, and the transition between the first gas outlet 431 and the second gas outlet 432 is smooth, which can improve the smoothness of the reaction gas outflow.

[0069] Preferably, the second venting member 432 extends along the first direction L1, and the first venting member 431 includes an abutting section and a bending section. The abutting section extends along the second direction L2, and the bending section is connected to the second venting member 432. In this way, the extending direction of the venting assembly 43 is changed by the bending section, which can reduce the space occupied by the venting assembly 43 in the second direction L2, thereby reducing the size of the entire reaction chamber in the second direction L2.

[0070] In the embodiments of this application, such as Figure 9 and Figure 10As shown, the reaction chamber also includes a first support assembly 51, which includes two first support plates 511 and multiple first support rods 512. The two first support plates 511 are spaced apart along the second direction L2 and abut against the inner sidewall of the outer shell 41. The two ends of the first support rods 512 in the second direction L2 are respectively connected to the two first support plates 511. The multiple first support rods 512 support the heating chamber 1. In this way, the heating chamber 1 can be supported by the first support rods 512.

[0071] Furthermore, the first support assembly 51 also includes a stabilizing plate 513, with its two ends in the second direction L2 connected to two first support plates 511 respectively, to further enhance the strength of the first support assembly 51 and thus improve the stability of the support for the heating chamber 1. The stabilizing plate 513 has a limiting hole 515 extending along the first direction L1, through which the transmission rod 81 passes, and the limiting hole 515 can limit the movement of the transmission rod 81.

[0072] Optionally, the first support assembly 51 further includes a plurality of stabilizer bars 514, the two ends of which are connected to two first support plates 511 in the second direction L2, and the stabilizer bars 514 are located below the first support bars 512.

[0073] Optionally, the size of the first support plate 511 near the air inlet in the first direction L1 is larger than the size of the first support plate 511 near the air outlet in the first direction L1. The first support plate 511 near the air inlet abuts against the side of the first heat insulation member 171 opposite to the second heat insulation member 172 in the second direction L2. A fixing port is provided on the first support plate 511 near the air inlet. The position of the fixing port corresponds to the position of the first connecting port 174, so that the fixing port is connected to the first connecting port 174. The first support plate 511 near the air outlet is located at the bottom of the heating chamber 1.

[0074] like Figure 9 and Figure 10 As shown, the reaction chamber also includes a second support assembly 52, which includes two second support plates 521 and a second support rod 522. The two second support plates 521 are arranged at intervals along the second direction L2. The two ends of any second support rod 522 are connected to the two second support plates 521 respectively in the second direction L2. Both second support plates 521 have a first clearance opening for the air intake assembly 42 and the conveying assembly 45 to pass through. The second support assembly 52 can support the air intake assembly 42 and the conveying assembly 45.

[0075] Furthermore, the reaction chamber also includes a transition assembly 54, which includes a support ring 541 and an abutment plate 542. One end of the support ring 541 in the second direction L2 is connected to the abutment plate 542. The abutment plate 542 has a second clearance opening, and the support ring 541 has a third clearance opening. The first mounting end and the second mounting end of the gas outlet assembly 43 pass through the second clearance opening and the third clearance opening, respectively.

[0076] like Figure 9 and Figure 11 As shown, the reaction chamber also includes a third support assembly 53, which includes two third support plates 531 and a third support rod 532. The two third support plates 531 are arranged at intervals along the second direction L2. The two ends of the third support rod 532 are respectively connected to the two third support plates 531 in the second direction L2. Both third support plates 531 abut against the bottom of the gas outlet assembly 43, thereby supporting the gas outlet assembly 43.

[0077] Optionally, a first sealing ring 6 is provided between the first flange 2 and the outer shell 41, and a second sealing ring is provided between the second flange 31 and the outer shell 41. By providing the first sealing ring 6 and the second sealing ring, the sealing effect between the outer shell 41 and the first flange 2, and between the outer shell 41 and the second flange 31, is ensured, ensuring that the reaction chamber is always in a vacuum environment.

[0078] Furthermore, the first flange 2 has a hollow structure to form a first cooling chamber filled with coolant. This prevents the temperature of the first flange 2 from becoming too high, thus preventing the first sealing ring 6 from being damaged by excessive heat. The second flange 31 has a hollow structure to form a second cooling chamber filled with coolant. This prevents the temperature of the second flange 31 from becoming too high, thus preventing the second sealing ring from being damaged by excessive heat. The third flange 32 has a hollow structure to form a third cooling chamber filled with coolant. This prevents the temperature of the third flange 32 from becoming too high, thus preventing the third sealing ring from being damaged by excessive heat. The outer casing 41 can also have a hollow structure to form a fourth cooling chamber filled with coolant. This prevents the temperature of the outer casing 41 from becoming too high.

[0079] Furthermore, the reaction chamber also includes a heating coil 7, which is wound around the outer wall of the outer casing 41. The heating coil 7 is energized to induce heating in the heating chamber body 13. The span of the heating coil 7 in the second direction L2 covers the heating chamber 1. In this way, the heating coil 7 can perform non-contact heating of the heating chamber body 13 to meet the requirements of wafer processing. In addition, the induced heating of the heating chamber body 13 by the heating coil 7 can improve the uniformity of heating of the heating chamber body 13.

[0080] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this utility model, and are not intended to limit it. Although the utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this utility model.

Claims

1. A heating chamber, characterized in that, The heating chamber includes an air inlet, an air outlet, a transmission port, a wafer transmission channel, and a gas transmission growth chamber. The wafer transmission channel is located on one side of the gas transmission growth chamber in a first direction. The air inlet and the air outlet are respectively connected to opposite sides of the gas transmission growth chamber in a second direction. The transmission port is connected to one side of the wafer transmission channel in the second direction. The transmission port and the air inlet are located on the same side in the second direction. The first direction and the second direction intersect.

2. The heating chamber according to claim 1, characterized in that, The heating chamber includes a heating chamber body and a partition assembly. The partition assembly includes a first partition plate and a second partition plate. The heating chamber body encloses a receiving cavity. The first partition plate and the second partition plate are spaced apart within the receiving cavity along the first direction. The first partition plate abuts against the inner wall of the heating chamber body on both sides of the third direction. The second partition plate abuts against the inner wall of the heating chamber body on both sides of the third direction. The gas transmission growth chamber is located between the first partition plate and the second partition plate. The third direction intersects the plane defined by the first direction and the second direction.

3. The heating chamber according to claim 2, characterized in that, The partition assembly further includes an installation mechanism, which includes two first mounting plates. The two first mounting plates are spaced apart along the third direction, and the first mounting plates abut against the first partition plate and the second partition plate on their respective sides in the first direction.

4. The heating chamber according to claim 2 or 3, characterized in that, The first partition plate, on the side opposite to the second partition plate in the first direction, and the inner wall of the heating chamber body form the wafer transport channel.

5. The heating chamber according to claim 2 or 3, characterized in that, The second partition plate, on the side opposite to the first partition plate in the first direction, forms the wafer transport channel with the inner wall of the heating chamber body.

6. The heating chamber according to claim 3, characterized in that, The heating chamber includes a plurality of mounting mechanisms, wherein the two first mounting plates in each mounting mechanism are of equal size in the first direction, and the size of the first mounting plate in one mounting mechanism in the first direction is not equal to the size of the first mounting plate in another mounting mechanism in the first direction, and the plurality of mounting mechanisms are alternatively mounted in the receiving cavity.

7. The heating chamber according to claim 2 or 3, characterized in that, The heating chamber also includes a heat insulation component that covers the heating chamber body. The thermal conductivity of the heat insulation component is less than that of the heating chamber body.

8. The heating chamber according to claim 7, characterized in that, The heating chamber includes a first heat insulation component, a second heat insulation component, and a third heat insulation component. The first heat insulation component and the second heat insulation component are respectively disposed on both sides of the heating chamber body in the second direction, and the third heat insulation component surrounds the heating chamber. The first heat insulation component has a first communication port, and the air inlet and the transmission port are both connected to the first communication port. The second heat insulation component has a second communication port, and the air outlet is connected to the second communication port.

9. The heating chamber according to claim 2, characterized in that, The heating chamber also includes a drive assembly and a tray, the tray being used to support the wafer, the separation assembly having a movable opening, and the wafer transport channel and the gas transport growth chamber being connected through the movable opening; The driving component can drive the tray to move along the first direction so that the wafer can move between the wafer transport channel and the gas transport growth chamber through the moving port, and the driving component can drive the tray to rotate. Alternatively, the drive assembly may only be able to drive the tray to move along the first direction so that the wafer can move between the wafer transport channel and the gas transport growth chamber through the movement port.

10. The heating chamber according to claim 9, characterized in that, The tray includes a support portion and an outer edge portion, the outer edge portion having a mounting hole extending through the outer edge portion, the support portion being detachably mounted in the mounting hole, and the support portion being connected to the drive assembly.

11. A reaction chamber, characterized in that, The reaction chamber includes a first flange, a sealing assembly, a housing, and a heating chamber according to any one of claims 1 to 10, the housing having two openings opposite each other in the second direction, the first flange and the sealing assembly respectively covering the two openings, and the heating chamber disposed inside the housing.

12. The reaction chamber according to claim 11, characterized in that, The reaction chamber further includes an exhaust pipe, an air inlet assembly, and an air outlet assembly. The air inlet assembly and the air outlet assembly are both disposed inside the outer shell. The air inlet assembly surrounds an air inlet channel, and the air outlet assembly surrounds an air outlet channel. The first flange has an air inlet chamber, and the exhaust pipe is fixed to the outer wall of the sealing assembly. The two ends of the air intake channel are connected to the air inlet and the air intake chamber, respectively, and the two ends of the exhaust channel are connected to the air outlet and the exhaust pipe, respectively.

13. The reaction chamber according to claim 12, characterized in that, The reaction chamber further includes a gas equalization component, which is disposed between the gas inlet component and the first flange; The gas equalization component includes multiple gas equalization plates, which are arranged at intervals along the second direction. Each gas equalization plate has multiple gas equalization grooves, which are arranged at intervals along the first direction. The gas equalization grooves on two adjacent gas equalization plates are staggered in the first direction.

14. The reaction chamber according to claim 11, characterized in that, The reaction chamber includes a first support assembly, which includes two first support plates and a plurality of first support rods. The two first support plates are spaced apart along the second direction. The first support plates abut against the inner sidewall of the outer shell. The two ends of the first support rods in the second direction are respectively connected to the two first support plates. The plurality of first support rods support the heating chamber.

15. The reaction chamber according to claim 11, characterized in that, The reaction chamber also includes a heating coil, which is wound around the outer wall of the outer shell. The heating coil is energized to induce heat in the heating chamber, and the span of the heating coil in the second direction covers the heating chamber.

Images