Imaging device and spectral modulation structure

Abstract

The utility model discloses an imaging device and spectral modulation structure, imaging device includes camera lens, spectral modulation structure and imaging sensor, wherein, spectral modulation structure includes first modulation structure and second modulation structure, and the light absorption layer of first modulation structure and the light absorption layer of second modulation structure mutually abut. Two cut-off wavelengths of first modulation structure are respectively lambda 1 and lambda 2, and lambda 1 is greater than 600nm, and lambda 2 is less than 450nm. Two cut-off wavelengths of second modulation structure are respectively lambda 3 and lambda 4, and 380nm is less than lambda 4 is less than lambda 2 is less than lambda 1 is less than lambda 3 is less than 660nm. So that one cut-off wavelength of spectral modulation structure is located at lambda 1~lambda 3, and another cut-off wavelength is located at lambda 4~lambda 2, for effectively cutting off infrared radiation of wavelength greater than 600nm, while effectively cutting off ultraviolet light of wavelength less than lambda 4~lambda 2, for improving imaging quality.

Description

Technical Field

[0001] This application relates to the field of camera technology, and in particular to an imaging device and a spectral modulation structure. Background Technology

[0002] Steel production involves many high-temperature and high-brightness operations, such as heating steel billets in furnaces. These operations require real-time monitoring to ensure safety and efficiency. However, when removing the steel billet from the furnace, which can reach temperatures as high as 1300℃, the intense infrared radiation emitted by the billet or furnace (with wavelengths greater than 600nm) and the superposition of infrared and visible light creates a large area of ​​red interference halo. This makes it difficult for cameras to effectively capture the flame, the billet's outline, and its color.

[0003] In addition, the surface of the steel billet reflects ultraviolet light from the environment, forming a purple halo. The wavelength range of ultraviolet light is 380nm to 450nm. This also adversely affects the imaging quality of the camera. To ensure the imaging quality of the camera, it is often necessary to cut off the above-mentioned wavelength band. However, the current technology has poor cutoff effect on the above-mentioned wavelength band, resulting in generally poor imaging quality of the camera.

[0004] Therefore, how to cut off ultraviolet light within a specific wavelength range while also cutting off infrared radiation within a specific wavelength range to effectively improve the imaging quality of a camera has become a problem that urgently needs to be solved by those skilled in the art. Utility Model Content

[0005] This invention provides an imaging device that can block ultraviolet light within a specific wavelength range while also blocking infrared radiation within a specific wavelength range, thereby effectively improving imaging quality.

[0006] In a first aspect, this utility model provides an imaging device, including a lens, a spectral modulation structure, and an imaging sensor. Incident light propagates sequentially through the lens and the spectral modulation structure to the imaging sensor. The spectral modulation structure includes a first modulation structure and a second modulation structure. The first modulation structure includes a first light-absorbing layer, and the second modulation structure includes a second light-absorbing layer, with the first and second light-absorbing layers in contact with each other. The two cutoff wavelengths of the first modulation structure are λ1 and λ2, where λ1 > 600 nm and λ2 < 450 nm. The two cutoff wavelengths of the second modulation structure are λ3 and λ4, where λ1, λ2, λ3, and λ4 satisfy the following condition: 380 nm < λ4 < λ2 < λ1 < λ3 < 660 nm.

[0007] The imaging device provided by this invention, since the first light-absorbing layer of the first modulation structure and the second light-absorbing layer of the second modulation structure are in contact with each other, and the cutoff wavelength of the first modulation structure is λ1 > 600nm and the cutoff wavelength is λ2 < 450nm, while the two cutoff wavelengths λ3 and λ4 of the second modulation structure satisfy: 380nm < λ4 < λ2 < λ1 < λ3 < 660nm, one cutoff wavelength of the spectral modulation structure (hereinafter referred to as the first cutoff wavelength) can be controlled between λ1 and λ3 to effectively cut off infrared radiation with wavelengths greater than λ1 to λ3, as well as wavelengths in the range of 600nm to (λ1 to λ3); the other cutoff wavelength of the spectral modulation structure (hereinafter referred to as the second cutoff wavelength) is controlled between λ4 and λ2 to cut off ultraviolet light with wavelengths less than λ4 to λ2, and to partially cut off ultraviolet light in the range of (λ4 to λ2) to 450nm, thereby effectively improving the imaging quality.

[0008] In one possible implementation of the utility model, 615nm≤λ1≤635nm is used to cut off light within a specific wavelength range.

[0009] In one possible implementation of the utility model, 636nm≤λ3≤655nm is used to cut off light within a specific wavelength range.

[0010] In one possible implementation of the utility model, 427nm≤λ2≤447nm is used to cut off light within a specific wavelength range.

[0011] In one possible implementation of the utility model, 405nm≤λ4≤425nm is used to cut off light within a specific wavelength range.

[0012] In one possible implementation of the utility model, the thickness of the first modulation structure is a, and a satisfies: 0.21mm≤a≤0.3mm, so as to reduce costs while achieving the cutoff of light in a specific wavelength range.

[0013] In one possible implementation of the utility model, the thickness of the second modulation structure is b, and b satisfies: 0.45mm≤b≤0.6mm, so as to reduce costs while achieving the cutoff of light in a specific wavelength range.

[0014] In one possible implementation of the utility model, the first modulation structure further includes a first substrate and a first reflective layer, with the first substrate located between the first reflective layer and the first light-absorbing layer. The second modulation structure further includes a second substrate and a second reflective layer, with the second substrate located between the second reflective layer and the second light-absorbing layer, thereby simplifying the structure while achieving cutoff of light within a specific wavelength range.

[0015] In one possible implementation of the utility model, the first modulation structure further includes a first substrate and a first reflective layer, with the first substrate located between the first reflective layer and the first light-absorbing layer. The second modulation structure further includes a second substrate and a third light-absorbing layer, with the second substrate located between the second and third light-absorbing layers. The spectral modulation structure further includes a third modulation structure located on the side of the second modulation structure opposite to the first modulation structure. The third modulation structure includes a third substrate, a fourth light-absorbing layer, and a third reflective layer; the third substrate is located between the fourth and third light-absorbing layers; the fourth and third light-absorbing layers abut against each other. The two cutoff wavelengths of the third modulation structure are λ5 and λ6, respectively, and 380nm < λ5 < λ6 < 660nm. Thus, when the combination of the first and second modulation structures cannot meet the requirements of a specific range of cutoff wavelengths, a more precise cutoff wavelength range for infrared radiation and a more precise cutoff wavelength range for ultraviolet light can be obtained by combining the first, second, and third modulation structures. This further improves the accuracy of the imaging device in cutting off different wavelengths, thereby effectively improving the imaging quality.

[0016] Secondly, the utility model provides a spectral modulation structure, including a first modulation structure and a second modulation structure. The first modulation structure includes a first light-absorbing layer, and the second modulation structure includes a second light-absorbing layer, with the first and second light-absorbing layers in contact with each other. The first modulation structure has two cutoff wavelengths, λ1 and λ2, where λ1 > 600 nm and λ2 < 450 nm. The second modulation structure has two cutoff wavelengths, λ3 and λ4, where λ1, λ2, λ3, and λ4 satisfy the following condition: 380 nm < λ4 < λ2 < λ1 < λ3 < 660 nm.

[0017] By using the imaging device provided by this utility model, users can quickly combine multiple adjustment structures with different cutoff wavelengths to obtain new cutoff wavelengths to meet the cutoff requirements for light in a specific wavelength range. Attached Figure Description

[0018] Figure 1 A schematic diagram of the imaging device provided by this utility model;

[0019] Figure 2 for Figure 1 Exploded view of the first modulation structure of the provided imaging device;

[0020] Figure 3 This is a spectral curve of the first modulation structure;

[0021] Figure 4 This is a spectral curve of the second modulation structure 22;

[0022] Figure 5 The spectral curve of the spectral modulation structure provided by this utility model;

[0023] Figure 6 A schematic diagram of a spectral modulation structure provided by this utility model.

[0024] Reference numerals: 1-Lens; 2-Spectral modulation structure; 21-First modulation structure; 211-First light-absorbing layer; 212-First substrate; 213-First reflective layer; 22-Second modulation structure; 221-Second light-absorbing layer; 222-Second substrate; 223-Second reflective layer; 23-Third modulation structure; 3-Imaging sensor. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings. However, the exemplary embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein. The same reference numerals in the figures denote the same or similar structures, and therefore repeated descriptions of them will be omitted. The terms expressing position and direction described in the embodiments of this application are illustrative based on the accompanying drawings, but changes can be made as needed, and all such changes are included within the scope of protection of this application. The accompanying drawings of the embodiments of this application are only for illustrating relative positional relationships and do not represent actual scale.

[0026] It should be noted that specific details are set forth in the following description to facilitate understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar extensions without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0027] Steel production involves many high-temperature and high-brightness operations, such as heating steel billets in furnaces. These operations require real-time monitoring to ensure safety and efficiency. However, when removing the steel billet from the furnace, its temperature can reach as high as 1300℃. The intense infrared radiation emitted by the high-temperature billet or furnace, with wavelengths greater than 600nm, combined with visible light, creates a large area of ​​red interference halo. This makes it difficult for cameras to effectively capture the flame, the billet's outline, and its color.

[0028] In addition, the surface of the steel billet reflects ultraviolet light from the environment, forming a purple halo. The wavelength range of ultraviolet light is 380nm to 450nm. This also adversely affects the imaging quality of the camera. To ensure the imaging quality of the camera, it is often necessary to cut off the above-mentioned wavelength band. However, the current technology has poor cutoff effect on the above-mentioned wavelength band, resulting in generally poor imaging quality of the camera.

[0029] In view of this, the imaging apparatus provided in this application sets up a spectral modulation structure between the lens and the imaging sensor to cut off infrared radiation and ultraviolet light within a specific range, thereby effectively improving image quality. To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0030] refer to Figure 1 , Figure 1 This is a schematic diagram of an imaging device provided by the present invention. The imaging device includes a housing and a viewing window, with the viewing window located at the opening of the housing. Additionally, the imaging device includes a lens 1, a spectral modulation structure 2, and an imaging sensor 3. The lens 1, spectral modulation structure 2, and imaging sensor 3 are all located within the housing, with the lens 1 positioned closer to the viewing window than the imaging sensor 3. The spectral modulation structure 2 is located between the lens 1 and the imaging sensor 3. Incident light propagates sequentially through the lens 1 and the spectral modulation structure 2 to the imaging sensor 3.

[0031] When specifically configuring the spectral modulation structure 2, the spectral modulation structure 2 includes a first modulation structure 21 and a second modulation structure 22, which are referred to together. Figure 1 and Figure 2 , Figure 2 For display Figure 1 An exploded view of the first modulation structure 21 of the provided imaging device. The first modulation structure 21 includes a first light-absorbing layer 211, and the second modulation structure 22 includes a second light-absorbing layer 221, with the first light-absorbing layer 211 and the second light-absorbing layer 221 abutting against each other.

[0032] It is understandable that the first light-absorbing layer 211 and the second light-absorbing layer 221 are seamlessly bonded together. This avoids the risk of light being reflected within the air layer due to the formation of an air layer between the first light-absorbing layer 211 and the second light-absorbing layer 221, thereby generating stray light.

[0033] refer to Figure 3 , Figure 3 This is a spectral curve of the first modulation structure 21. Figure 3The horizontal axis represents wavelength, and the vertical axis represents transmittance. In the spectral curve, the wavelength corresponding to 50% transmittance is the cutoff wavelength of the spectral modulation structure 2. The two cutoff wavelengths of the first modulation structure 21 are λ1 and λ2, respectively, where λ1 > 600 nm and λ2 < 450 nm.

[0034] It should be noted that, as Figure 3 As shown, wavelengths with transmittance in the range of 0-50% experience a rapid drop in transmittance to 0, making it difficult for light in this band to pass effectively through the spectral modulation structure 2; that is, most of the light in this band is blocked by the spectral modulation structure. However, wavelengths with transmittance in the range of 50%-100% mostly pass through the spectral modulation structure 2.

[0035] refer to Figure 4 , Figure 4 This is a spectral curve of the second modulation structure 22. The two cutoff wavelengths of the second modulation structure 22 are λ3 and λ4, and λ1, λ2, λ3, and λ4 satisfy: λ4 < λ2 < λ1 < λ3.

[0036] The imaging device provided by this invention, since the first light-absorbing layer 211 of the first modulation structure 21 and the second light-absorbing layer 221 of the second modulation structure 22 are in contact with each other, and the cutoff wavelength λ1 of the first modulation structure 21 is greater than 600nm and the cutoff wavelength λ2 is less than 450nm, while the two cutoff wavelengths λ3 and λ4 of the second modulation structure 22 satisfy: 380nm < λ4 < λ2 < λ1 < λ3 < 660nm, one cutoff wavelength of the spectral modulation structure 2 (hereinafter referred to as the first cutoff wavelength) can be controlled between λ1 and λ3 to effectively cut off infrared radiation with wavelengths greater than λ1 to λ3, and wavelengths in the range of 600nm to (λ1 to λ3); the other cutoff wavelength of the spectral modulation structure 2 (hereinafter referred to as the second cutoff wavelength) is controlled between λ4 and λ2 to effectively cut off ultraviolet light with wavelengths less than λ4 to λ2, and partially cut off ultraviolet light in the range of (λ4 to λ2) to 450nm, thereby effectively improving the imaging quality.

[0037] It is understood that by using the imaging device provided by this utility model, users can quickly combine multiple adjustment structures with different cutoff wavelengths to obtain new cutoff wavelengths. This can not only improve the imaging quality of the imaging device, but also enhance the versatility of the imaging device and reduce production costs.

[0038] In the specific configuration of the first modulation structure 21, in one optional implementation, such as Figure 2As shown, the first modulation structure 21 also includes a first substrate 212 and a first reflective layer 213. The first substrate 212 is located between the first reflective layer 213 and the first light-absorbing layer 211, so as to simplify the first modulation structure 21 while meeting the cutoff wavelength requirements of the first modulation structure 21.

[0039] It should be noted that this utility model does not limit the shape and material of the substrate. For example, the first substrate 212 can be a plate structure made of blue glass, with a first reflective layer attached to one side of the plate structure and a first light-absorbing layer 211 attached to the opposite side. The first reflective layer is, for example, an AR film, i.e., an anti-reflection film, used to reduce reflected light and improve the transmittance of the spectral modulation structure 2. The first light-absorbing layer 211 is, for example, an IR film, used to filter infrared light while allowing visible and ultraviolet light to pass through.

[0040] Furthermore, the settings parameters of the AR film and IR film can be selected according to the actual situation, and this utility model does not impose specific limitations. Moreover, the thickness of the first modulation structure 21 can be selected according to actual needs. For example, the thickness of the first modulation structure 21 can be 'a', where 'a' satisfies: 0.21mm ≤ a ≤ 0.3mm, in order to meet the cutoff wavelength requirements of the first modulation structure 21 while reducing costs.

[0041] In the specific configuration of the second modulation structure 22, the second modulation structure 22 further includes a second substrate 222 and a second reflective layer 223. The second substrate 222 is located between the second reflective layer 223 and the second light-absorbing layer 221, so as to simplify the second modulation structure 22 while meeting the cutoff wavelength requirements. The second substrate 222, the second reflective layer 223 and the second light-absorbing layer 221 can be referred to the first substrate 212, the first reflective layer 213 and the first light-absorbing layer 211, and will not be described in detail here.

[0042] In addition, the thickness of the second modulation structure 22 can be selected according to actual needs. For example, the thickness of the second modulation structure 22 can be b, and b satisfies: 0.45mm≤b≤0.6mm, so as to meet the cutoff wavelength requirements of the second modulation structure 22 and reduce costs.

[0043] It is worth mentioning that the imaging device provided by this invention suppresses halo diffusion through the asymmetric spectral modulation effect of multi-layer media, achieving multi-level modulation of short-wavelength ultraviolet light and near-wavelength infrared radiation while maintaining transmittance in the visible light band. Furthermore, it enhances the physical absorption of long-wavelength infrared light, thereby effectively improving the imaging device's capture rate of flames, steel billet outlines, colors, etc., in complex working scenarios.

[0044] In an alternative embodiment, since the wavelength of infrared radiation generated during steel production is typically greater than 600 nm, while the wavelength of reflected ultraviolet light is mainly concentrated between 380 nm and 450 nm, the λ1 of the first modulation structure 21 and the λ3 of the second modulation structure 22 can satisfy: 615 nm ≤ λ1 ≤ 635 nm, and λ1 < λ3 < 660 nm. This ensures that the first cutoff wavelength of the spectral modulation structure 2 is between 615 nm and λ3. During the imaging process of the imaging device, infrared radiation greater than the first cutoff wavelength, as well as infrared radiation within the range of 615 nm to the first cutoff wavelength, are effectively cut off by the spectral modulation structure 2 to reduce the generation of red halos, thereby improving the imaging quality of the imaging device.

[0045] It is understandable that when the cutoff wavelength is 615nm, the transmittance of the band with wavelengths between 600nm and 615nm is close to 50%, for example, between 50% and 55%. Thus, the spectral modulation structure 2 can also effectively cut off the wavelength of this band.

[0046] It is worth mentioning that λ1 of the first modulation structure 21 can satisfy: 615nm ≤ λ1 < 635nm, and λ3 of the second modulation structure 22 can satisfy: 640nm ≤ λ3 ≤ 655nm, as shown below. Figure 5 As shown, Figure 5 The spectral curve of the spectral modulation structure 2 provided by this invention is used to illustrate the first cutoff wavelength of the spectral modulation structure 2, which is 615nm to 640nm. Since the wavelength of infrared radiation generated during the steel production process is greater than 600nm, the imaging device provided by this invention can obtain a more precise cutoff wavelength within a specific range for cutting off infrared wavelengths by combining the first modulation structure 21 with the second modulation structure 22. This further improves the accuracy of the imaging device in cutting off different wavelengths, thereby effectively improving the imaging quality.

[0047] It is understandable that, such as Figure 5 As shown, the transmittance of wavelengths in the range of 600nm to 628nm is between 50% and 55%, meaning that the spectral modulation structure 2 provided by this invention can cut off 50% to 45% of wavelengths in this range, while the transmittance of wavelengths greater than the cutoff wavelength will decrease rapidly, thereby achieving effective cutoff of infrared radiation in a specific wavelength band.

[0048] In an alternative embodiment, the λ2 of the first modulation structure 21 can satisfy: 427nm≤λ2≤447nm, and 380nm<λ4<λ2, so that the second cutoff wavelength of the spectral modulation structure 2 is between λ4 and 447nm. Then, during the imaging process of the imaging device, ultraviolet light smaller than the second cutoff wavelength is cut off by the spectral modulation structure 2, and a portion of ultraviolet light from the second cutoff wavelength to 450nm is also cut off by the spectral modulation structure 2, in order to reduce the generation of purple halo, thereby improving the imaging quality of the imaging device.

[0049] It is worth mentioning that the λ2 of the first modulation structure 21 can satisfy: 427nm≤λ2≤447nm, and the λ4 of the second modulation structure 22 can satisfy: 405nm≤λ4≤425nm. Therefore, the second cutoff wavelength of the spectral modulation structure 2 is 420nm~436nm. Since the wavelength of ultraviolet light generated during steel production is between 380nm and 450nm, the imaging device provided by this invention can obtain a more precise cutoff wavelength for a specific range of infrared radiation and a more precise cutoff wavelength for a specific range of ultraviolet light by combining the first modulation structure 21 and the second modulation structure 22. This further improves the accuracy of the imaging device in cutting off different wavelengths, thereby effectively improving the imaging quality.

[0050] Preferably, λ1 = 625nm and λ3 = 645nm, so the first cutoff wavelength is 628nm; at the same time, λ4 = 415nm and λ2 = 436nm, so the second cutoff wavelength is 432nm, and wavelengths in the range of 432nm to 450nm can also be effectively cut off.

[0051] In one alternative implementation, such as Figure 6 As shown, Figure 6 A schematic diagram illustrating the spectral modulation structure 2. The spectral modulation structure 2 may further include a third modulation structure 23, which is located on the side of the second modulation structure 22 away from the first modulation structure 21. The third modulation structure 23 includes a third substrate, a fourth light-absorbing layer, and a third reflective layer, with the third substrate located between the fourth light-absorbing layer and the third reflective layer.

[0052] The second modulation structure 22 may include a second substrate 222, a second light-absorbing layer 221, and a third light-absorbing layer. The second substrate 222 is located between the second light-absorbing layer 221 and the third light-absorbing layer, and the second light-absorbing layer 221 abuts against the first light-absorbing layer 211 of the first substrate 212. The third light-absorbing layer abuts against the fourth light-absorbing layer of the third modulation structure 23. Furthermore, the third modulation structure 23 has two cutoff wavelengths, λ5 and λ6, where 380nm < λ5 < λ6 < 660nm. Thus, when combining the first modulation structure 21 and the second modulation structure 22 cannot meet the requirements for a specific range of cutoff wavelengths, the combination of the first modulation structure 21, the second modulation structure 22, and the third modulation structure 23 can obtain a more precise cutoff wavelength for both infrared and ultraviolet light, thereby further improving the accuracy of the imaging device in cutting off different wavelengths and effectively improving image quality.

[0053] It is understood that the imaging device provided by this utility model can also be provided with multiple mutually abutting modulation structures to meet the cutoff requirements of a specific band.

[0054] In addition, the third modulation structure 23 can be referred to the first modulation structure 21, and will not be described in detail here.

[0055] In summary, the imaging device provided by this utility model, since the first light-absorbing layer 211 of the first modulation structure 21 and the second light-absorbing layer 221 of the second modulation structure 22 are in contact with each other, and the first modulation structure 21 has λ1 > 600nm and λ2 < 450nm, while the two cutoff wavelengths of the second modulation structure 22 satisfy: λ4 < λ2 < λ1 < λ3, the first cutoff wavelength of the spectral modulation structure 2 can be controlled between λ1 and λ3 to effectively cut off infrared radiation with wavelengths greater than λ1 to λ3, and wavelengths in the range of 600nm to (λ1 to λ3); the second cutoff wavelength is controlled between λ4 and λ2 to effectively cut off ultraviolet light with wavelengths less than λ4 to λ2, and (λ4 to λ2) to 450nm, thereby effectively improving the imaging quality.

[0056] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application. Therefore, if such modifications and variations fall within the scope of the claims of this application and their equivalents, this application also intends to include such modifications and variations.

Claims

1. An imaging device, characterized in that, The system includes a lens, a spectral modulation structure, and an imaging sensor. Incident light propagates sequentially through the lens and the spectral modulation structure to the imaging sensor, wherein: The spectral modulation structure includes a first modulation structure and a second modulation structure. The first modulation structure includes a first light-absorbing layer, and the second modulation structure includes a second light-absorbing layer, with the first light-absorbing layer and the second light-absorbing layer abutting against each other. The two cutoff wavelengths of the first modulation structure are λ1 and λ2, where λ1 > 600 nm and λ2 < 450 nm. The two cutoff wavelengths of the second modulation structure are λ3 and λ4, and λ1, λ2, λ3 and λ4 satisfy: 380nm < λ4 < λ2 < λ1 < λ3 < 660nm.

2. The imaging device according to claim 1, characterized in that, 615nm≤λ1≤635nm.

3. The imaging device according to claim 2, characterized in that, 636nm≤λ3≤655nm.

4. The imaging apparatus according to any one of claims 1-3, characterized in that, 427nm≤λ2≤447nm.

5. The imaging device according to claim 4, characterized in that, 405nm≤λ4≤425nm.

6. The imaging apparatus according to claim 5, characterized in that, The thickness of the first modulation structure is a, and a satisfies: 0.21mm≤a≤0.3mm.

7. The imaging apparatus according to claim 5, characterized in that, The thickness of the second modulation structure is b, and b satisfies: 0.45mm≤b≤0.6mm.

8. The imaging device according to claim 1, characterized in that, The first modulation structure further includes a first substrate and a first reflective layer, wherein the first substrate is located between the first reflective layer and the first light-absorbing layer; The second modulation structure further includes a second substrate and a second reflective layer, wherein the second substrate is located between the second reflective layer and the second light-absorbing layer.

9. The imaging device according to claim 1, characterized in that, The first modulation structure further includes a first substrate and a first reflective layer, wherein the first substrate is located between the first reflective layer and the first light-absorbing layer; The second modulation structure further includes a second substrate and a third light-absorbing layer, wherein the second substrate is located between the second light-absorbing layer and the third light-absorbing layer; The spectral modulation structure further includes a third modulation structure, which is located on the side of the second modulation structure that is away from the first modulation structure. The third modulation structure includes a third substrate, a fourth light-absorbing layer, and a third reflective layer; the third substrate is located between the fourth light-absorbing layer and the third reflective layer; the fourth light-absorbing layer abuts against the third light-absorbing layer; The two cutoff wavelengths of the third modulation structure are λ5 and λ6, respectively, and 380nm < λ5 < λ6 < 660nm.

10. A spectral modulation structure, characterized in that, It includes a first modulation structure and a second modulation structure, wherein: The first modulation structure includes a first light-absorbing layer, and the second modulation structure includes a second light-absorbing layer, wherein the first light-absorbing layer and the second light-absorbing layer abut against each other; The first modulation structure has two cutoff wavelengths, λ1 and λ2, where λ1 > 600 nm and λ2 < 450 nm. The second modulation structure has two cutoff wavelengths, λ3 and λ4, and λ1, λ2, λ3 and λ4 satisfy: 380nm < λ4 < λ2 < λ1 < λ3 < 660nm.

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