Thermal control heat sink for power devices

Abstract

The application provides a temperature control heat sink for a power device, characterized by comprising: a top layer circuit board, a semiconductor refrigeration structure and a metal layer arranged in parallel from top to bottom, the semiconductor refrigeration structure comprises a bottom layer circuit board arranged on the top surface of the metal layer, and the top surface of the bottom layer circuit board is provided with a PN structure of semiconductor refrigeration; the bottom surface of the top layer circuit board is provided with a printed circuit connected with the PN structure, the power-on end of the PN structure is arranged on the top surface of the top layer circuit, and the top surface of the top layer circuit board is used for mounting the power device and its auxiliary circuit device; and the bottom surface of the metal layer is used for connecting a heat dissipation shell. The scheme increases the temperature control function in the heat sink, reduces the temperature fluctuation of the power device, improves the stability of product indexes, designs the printed circuit on the surface of the heat sink, avoids designing an additional circuit for the power device, simplifies the product structure, and is helpful for product miniaturization.

Description

Technical Field

[0001] This utility model belongs to the field of power device temperature control technology, and in particular relates to a temperature control heat sink for power devices. Background Technology

[0002] With technological advancements, the integration and output power of modern radar products are gradually increasing, leading to a corresponding increase in heat flux density. In traditional radar power device cooling solutions, to improve product reliability and achieve cooling, the power devices are typically fixed to a heat sink or heat sink housing using a thermal interface material. The heat sink is then further fixed to the heat sink housing using the same material. During operation, the heat sink housing cools the power devices. However, in these existing cooling solutions, the heat transfer path between the power devices and the heat sink housing is relatively long, and cooling is only possible through the external heat sink housing. This prevents the device's temperature from being raised and thus hinders timely and precise temperature control. When radar product specifications are significantly affected by temperature fluctuations in power devices such as crystal oscillators, linear power amplifier chips, low-noise amplifiers, and MOS chips, the stability of these specifications cannot be guaranteed. Furthermore, these solutions require additional circuit board design for the power devices to ensure proper operation, inevitably leading to complex product structures and hindering miniaturization. Utility Model Content

[0003] To address the shortcomings of existing technologies, this utility model provides a temperature-controlled heat sink for power devices. By adding a temperature control function to the heat sink, the temperature fluctuation of the power devices is reduced, thereby improving the stability of product performance. Furthermore, by designing printed circuits on the surface of the heat sink, the design of additional circuits for the power devices is avoided, simplifying the product structure and contributing to product miniaturization.

[0004] In order to achieve the purpose of this utility model, the following solution is proposed: A temperature-controlled heat sink for power devices includes: a top circuit board, a semiconductor cooling structure, and a metal layer arranged in parallel from top to bottom. The semiconductor cooling structure includes a bottom circuit board disposed on the top surface of a metal layer, and the top surface of the bottom circuit board is provided with a PN structure for semiconductor cooling. The bottom surface of the top circuit board is provided with a printed circuit connecting the PN structure. The power-on terminal of the PN structure is located on the top surface of the top circuit board. The top surface of the top circuit board is used to mount power devices and their auxiliary circuit devices. The bottom surface of the metal layer is used to connect the heat sink housing.

[0005] The advantages of this invention are as follows: it can heat or cool power devices without increasing the product's additional space, achieving temperature control of the power devices and avoiding the temperature control accuracy problems of traditional solutions. Simultaneously, through integrated design, the printed circuit design of the power devices can be implemented within the heat sink, simplifying product design, improving product integration, and facilitating product miniaturization. Attached Figure Description

[0006] The accompanying drawings described herein are merely illustrative of selected embodiments, not all possible implementations, and are not intended to limit the scope of this invention.

[0007] Figure 1 An exploded view of the temperature-controlled heat sink structure of this application is shown.

[0008] Figure 2 A schematic diagram of the overall structure of the temperature-controlled heat sink of this application is shown.

[0009] Figure 3 A schematic diagram of the installation structure of the temperature-controlled heat sink of this application is shown.

[0010] The diagram is labeled as follows: Top circuit board-1, Semiconductor cooling structure-2, Bottom circuit board-21, PN structure-22, Power-on terminal-23, Metal layer-3, Heat dissipation shell-4. Detailed Implementation

[0011] To make the objectives, technical solutions and advantages of the present utility model clearer, the implementation methods of the present utility model will be described in detail below with reference to the accompanying drawings. However, the embodiments described in the present utility model are only some embodiments of the present utility model, and not all embodiments.

[0012] like Figures 1 to 3 As shown, a temperature-controlled heat sink for power devices includes: a top circuit board 1, a semiconductor cooling structure 2, and a metal layer 3 arranged in parallel from top to bottom.

[0013] The semiconductor cooling structure 2 includes a bottom circuit board 21 disposed on the top surface of the metal layer 3. The top surface of the bottom circuit board 21 is provided with a semiconductor cooling PN structure 22. Specifically, the top surface of the bottom circuit board 21 is provided with printed circuits for electrical connection of the PN structure 22.

[0014] The bottom surface of the top circuit board 1 is provided with a printed circuit connecting the PN structure 22. The power-on terminal 23 of the PN structure 22 is located on the top surface of the top circuit board 1. Specifically, the power-on terminal 23 can be implemented by printed circuits passing through the top and bottom surfaces of the top circuit board 1, or it can be extended to the top surface of the top circuit board 1 using a metallized via structure. The top surface of the top circuit board 1 is used to mount power devices and their auxiliary circuit devices. The top circuit board 1 is assembled with power devices and their auxiliary circuit devices by means of gluing, soldering, etc. Specifically, the power devices and their auxiliary circuit devices can be electrically connected by means of wire bonding or soldering to ensure that each device can work normally after the product is powered on. When working, by applying power to the power-on terminal 23, the PN structure 22 is activated, thereby heating or cooling the top circuit board 1, and achieving the purpose of heating and cooling the power devices.

[0015] The bottom surface of the metal layer 3 is used to connect the heat sink housing 4. Preferably, the metal layer 3 is connected to the heat sink housing 4 by screws.

[0016] During operation, if the temperature of the power device is too low, positive power can be supplied to the power terminal 23 on the top surface of the top circuit board 1, so that the top circuit board 1 acts as the hot end of the semiconductor cooling structure 2 and the bottom circuit board 21 acts as the cold end of the semiconductor cooling structure 2, thereby heating the power device and increasing its operating temperature.

[0017] If the power device temperature is too high, the power supply to the top power terminal 23 on the top surface of the top circuit board 1 can be reversed, i.e., the positive and negative polarities of the power supply can be reversed. This makes the top circuit board 1 the cold end of the semiconductor cooling structure 2, and the bottom circuit board 21 the hot end of the semiconductor cooling structure 2, thereby cooling the power device and reducing its operating temperature. Furthermore, the heat exchange between the semiconductor cooling structure 2 and the heat sink 4 is achieved through the mounting contact between the metal transition layer 3 and the heat sink 4, thus realizing temperature control of the power device.

[0018] The temperature-controlled heat sink designed using this method can serve as part of the power device circuit board, realizing the circuit board function of the power device, and can also control the temperature of the power device, ensuring the stability of the temperature-sensitive device indicators of the radar product while increasing the product integration.

[0019] Preferably, both the top circuit board 1 and the bottom circuit board 21 are ceramic circuit board structures.

[0020] Preferably, the top circuit board 1 is a multi-layer circuit board structure, with printed circuits on both the top and inner layers, which facilitates the assembly of surface power devices in the later stage, and the printed circuits are copper-plated gold or copper-plated tin structure.

[0021] Preferably, the PN structure 22 is connected to the top circuit board 1 and the bottom circuit board 21 by soldering.

[0022] Preferably, the metal layer 3 is made of an alloy material with an expansion coefficient of no more than 11ppm / K, such as tungsten copper alloy, molybdenum copper alloy, diamond composite material, etc.

[0023] Preferably, the metal layer 3 is connected to the underlying circuit board 21 by soldering or adhesive bonding to achieve heat transfer between the metal layer 3 and the underlying circuit board 21.

[0024] The above description is merely a preferred embodiment of this utility model and does not imply its uniqueness or limitation. Those skilled in the art should understand that various changes or equivalent substitutions made to this utility model without departing from its scope are all within the protection scope of this utility model.

Claims

1. A temperature-controlled heat sink for power devices, characterized in that, include: The top circuit board (1), semiconductor cooling structure (2) and metal layer (3) are arranged in parallel from top to bottom. The semiconductor cooling structure (2) includes a bottom circuit board (21) disposed on the top surface of the metal layer (3), and the top surface of the bottom circuit board (21) is provided with a semiconductor cooling PN structure (22). The bottom surface of the top circuit board (1) is provided with a printed circuit that connects to the PN structure (22). The power-on terminal (23) of the PN structure (22) is located on the top surface of the top circuit board (1). The top surface of the top circuit board (1) is used to mount power devices and their auxiliary circuit devices. The bottom surface of the metal layer (3) is used to connect the heat sink housing (4).

2. The temperature-controlled heat sink for power devices according to claim 1, characterized in that, Both the top circuit board (1) and the bottom circuit board (21) are ceramic circuit board structures.

3. The temperature-controlled heat sink for power devices according to claim 1, characterized in that, The top circuit board (1) is a multi-layer circuit board structure, with printed circuits on both the top and inner layers.

4. A temperature-controlled heat sink for power devices according to claim 1, characterized in that, The top surface of the bottom circuit board (21) is provided with printed circuits for electrical connection of the PN structure (22).

5. A temperature-controlled heat sink for power devices according to claim 1, characterized in that, The PN structure (22) is connected to the top circuit board (1) and the bottom circuit board (21) by soldering.

6. A temperature-controlled heat sink for power devices according to claim 1, characterized in that, The metal layer (3) is made of an alloy material with an expansion coefficient of no more than 11ppm / K.

7. A temperature-controlled heat sink for power devices according to claim 1, characterized in that, The metal layer (3) is connected to the underlying circuit board (21) by soldering or gluing.

8. A temperature-controlled heat sink for power devices according to claim 1, characterized in that, The metal layer (3) is connected to the heat sink housing (4) by screws.

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