Conductive film and perovskite solar cell

Abstract

This invention discloses a conductive film and a perovskite solar cell. The conductive film includes a substrate layer. A transparent conductive layer and a hole transport layer are sequentially stacked on one side of the substrate layer, and a water vapor barrier layer is disposed on the other side of the substrate layer. The hole transport layer is any one of nickel oxide plating, molybdenum oxide plating, copper oxide plating, and tungsten oxide plating, or a mixed plating of at least two of these. The water vapor barrier layer is any one of silicon oxide plating, silicon nitride plating, aluminum oxide plating, titanium nitride plating, and titanium oxide plating. The conductive film of this invention has a high hole mobility, which can improve the carrier transport efficiency in perovskite solar cell devices. Furthermore, the designed film structure has a good water vapor barrier effect, which can extend the service life of perovskite solar cell devices to a certain extent.

Description

Technical Field

[0001] This invention belongs to the field of conductive film technology, specifically relating to a conductive film and a perovskite solar cell. Background Technology

[0002] Perovskite solar cells, as an emerging photovoltaic technology, possess excellent characteristics such as low thickness, small mass, and flexibility. This technology not only exhibits superior photoelectric performance and high energy conversion efficiency, but also, due to its unique flexibility, breaks through the application limitations of traditional solar cells, demonstrating enormous industrialization potential and market prospects.

[0003] Perovskite solar cells typically consist of six functional structural layers: a substrate, a transparent bottom electrode, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, and a top electrode. The substrate is usually glass or a flexible polymer, its main function being to support the entire cell structure and allow light to pass through. The transparent bottom electrode collects and transports current while allowing most of the light to pass through and illuminate the light-absorbing layer. The hole transport layer selectively extracts and transports holes generated by the perovskite layer, blocking electrons and preventing charge recombination. The perovskite light-absorbing layer absorbs sunlight, generating photogenerated carriers (electrons and holes) to transport charge; the perovskite material itself can transport both electrons and holes. The electron transport layer selectively extracts and transports electrons generated by the perovskite layer, blocking holes and preventing charge recombination at the interface, thereby improving efficiency. The top electrode collects electrons from the electron transport layer, completing the entire circuit.

[0004] Currently, perovskite solar cells are typically fabricated using solution methods on transparent conductive glass or flexible substrates. The core process involves: first, forming a hole transport layer on the substrate through spin coating and annealing; then, sequentially depositing a perovskite light-absorbing layer, an electron transport layer, and a metal top electrode, thereby constructing a complete device structure capable of achieving efficient photoelectric conversion.

[0005] The performance limitations of existing perovskite solar cells stem primarily from two aspects: Firstly, the hole transport layer (typically a transition metal oxide, such as nickel oxide or molybdenum oxide) prepared by solution methods forms a nanocrystalline or porous structure with numerous grain boundaries. Since carrier transport is constrained by grain boundary scattering, it must proceed in a hopping mode, resulting in generally low mobility. Furthermore, the solution method easily introduces carbon impurities, affecting material purity. Secondly, the perovskite light-absorbing layer itself lacks chemical stability and is highly sensitive to moisture in the environment. Long-term outdoor operation can easily lead to hydrolysis and structural damage, potentially causing a continuous decline in device efficiency. Utility Model Content

[0006] The purpose of this invention is to provide a conductive film and a perovskite solar cell. The conductive film has a high hole mobility, which can improve the carrier transport efficiency in perovskite solar cell devices.

[0007] To achieve the above objectives, the technical solution provided by a specific embodiment of this utility model is as follows:

[0008] A conductive film includes a substrate layer, on one side of which a transparent conductive layer and a hole transport layer are sequentially stacked, and on the other side of which a water vapor barrier layer is disposed.

[0009] The hole transport layer is any one of nickel oxide plating, molybdenum oxide plating, copper oxide plating, and tungsten oxide plating, or a mixed plating of at least two of nickel oxide, molybdenum oxide, copper oxide, and tungsten oxide.

[0010] The water vapor barrier layer is any one of silicon oxide coating, silicon nitride coating, aluminum oxide coating, titanium nitride coating, and titanium oxide coating.

[0011] In one or more embodiments of this utility model, the thickness of the water vapor barrier layer is 30nm-200nm.

[0012] In one or more embodiments of this utility model, the thickness of the hole transport layer is 10nm-80nm.

[0013] In one or more embodiments of this utility model, the transparent conductive layer is either an ITO coating or an FTO coating.

[0014] In one or more embodiments of this utility model, the thickness of the transparent conductive layer is 3nm-400nm.

[0015] In one or more embodiments of the present invention, a first hardening layer is further provided between the substrate layer and the transparent conductive layer. The first hardening layer is an acrylic resin layer with a thickness of 1μm-5μm.

[0016] In one or more embodiments of this utility model, a second hardening layer is further provided between the base layer and the water vapor barrier layer. The second hardening layer is an acrylic resin layer with a thickness of 1μm-5μm.

[0017] In one or more embodiments of this utility model, the substrate layer is any one of PET layer, TAC layer, PMMA layer, PC layer, COP layer, and CPI layer, with a thickness of 23μm-250μm.

[0018] The technical solution provided by another specific embodiment of this utility model is as follows:

[0019] A perovskite solar cell, wherein the perovskite solar cell has at least the aforementioned conductive film.

[0020] Compared with the prior art, the present invention has the following beneficial effects:

[0021] 1. A transparent conductive metal layer and a hole transport layer are continuously deposited by magnetron sputtering. The high-quality hole transport thin film prepared by this process can provide more stable and higher carrier mobility compared with the solution method.

[0022] 2. The conductive film structure in this utility model includes a water vapor barrier layer, which can significantly reduce the impact of water and oxygen on the stability of photovoltaic devices.

[0023] 3. In this invention, the transparent conductive layer and the hole transport layer in the conductive film structure can be prepared simultaneously during magnetron sputtering, which can simplify the manufacturing process of perovskite solar cell devices and improve production efficiency. Attached Figure Description

[0024] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a schematic diagram of the conductive film structure in one embodiment of the present invention;

[0026] Figure 2 This is a schematic diagram of the structure of a conductive film with a first hardening layer and a second hardening layer in one embodiment of the present invention.

[0027] Explanation of key figure labels:

[0028] 1. Substrate layer; 2. Transparent conductive layer; 3. Hole transport layer; 4. Moisture barrier layer; 51. First hardening layer; 52. Second hardening layer. Detailed Implementation

[0029] To enable those skilled in the art to better understand the technical solutions in this disclosure, the technical solutions in the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. Based on the embodiments in this disclosure, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of this disclosure.

[0030] A specific embodiment of this utility model provides a conductive film, such as... Figure 1 As shown, it includes a base layer 1, a transparent conductive layer 2 and a hole transport layer 3 are stacked sequentially on one side of the base layer 1, and a water vapor barrier layer 4 is disposed on the other side of the base layer 1.

[0031] Furthermore, the substrate layer 1 can be any one of the following: PET layer, TAC layer, PMMA layer, PC layer, COP layer, and CPI layer. Choosing a transparent material with high light transmittance ensures that the conductive film has good light transmittance. The thickness of the substrate layer 1 is 23μm-250μm, specifically 23μm, 60μm, 100μm, 180μm, 200μm, and 250μm.

[0032] Furthermore, the transparent conductive layer 2 can be either an ITO coating or an FTO coating. ITO (indium tin oxide) and FTO (fluorine-doped tin oxide) are chosen because they have good light transmittance and excellent conductivity, which can improve the conductivity of the conductive film. The thickness of the transparent conductive layer 2 is 3nm-400nm, specifically 3nm, 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, and 400nm.

[0033] Furthermore, the hole transport layer 3 is any one of nickel oxide plating, molybdenum oxide plating, copper oxide plating, and tungsten oxide plating, or a mixed plating of at least two of nickel oxide, molybdenum oxide, copper oxide, and tungsten oxide. The hole transport layer 3 is formed by sputtering transition metal oxides such as nickel oxide, molybdenum oxide, copper oxide, and tungsten oxide or mixtures thereof using a magnetron sputtering process.

[0034] Simultaneously, the transparent conductive layer 2 is also formed using magnetron sputtering. During magnetron sputtering, the sputtered particles have high kinetic energy and can migrate to the lowest energy position on the substrate surface, thus forming a dense, flat, and highly crystalline thin film. The resulting thin film has the advantages of large grains and few grain boundaries, effectively promoting the rapid transport of charge carriers. Furthermore, since the transparent conductive layer 2 and the hole transport layer 3 are prepared by continuous sputtering, the interlayer gap is extremely small. This structural characteristic further significantly improves the interfacial mobility of charge carriers.

[0035] Furthermore, the thickness of the hole transport layer 3 is 10nm-80nm, specifically 10nm, 30nm, 50nm, 60nm, or 80nm.

[0036] Furthermore, the water vapor barrier layer 4 can be any one of a silicon oxide coating, a silicon nitride coating, an aluminum oxide coating, a titanium nitride coating, or a titanium oxide coating. As a high-performance barrier layer, the water vapor barrier layer 4 can significantly improve the overall water vapor barrier capability of the device, fundamentally preventing the erosion of the perovskite active layer by water and oxygen in the environment, and providing a reliable guarantee for the efficient and long-term stable operation of the device.

[0037] Furthermore, the thickness of the water vapor barrier layer 4 is 30nm-200nm, specifically 30nm, 80nm, 100nm, 130nm, 170nm, or 200nm.

[0038] Furthermore, such as Figure 2 As shown, a first hardening layer 51 is also provided between the substrate layer 1 and the transparent conductive layer 2. The first hardening layer 51 is an acrylic resin layer with a thickness of 1μm-5μm, specifically 1μm, 3μm, or 5μm.

[0039] Furthermore, such as Figure 2 As shown, a second hardening layer 52 is also provided between the base layer 1 and the water vapor barrier layer 4. The second hardening layer 52 is an acrylic resin layer with a thickness of 1μm-5μm, specifically 1μm, 3μm, or 5μm.

[0040] Both the first hardening layer 51 and the second hardening layer 52 are formed by coating with a hardening resin (such as Shin-Etsu Chemical SY-5228), which can improve the hardness of the substrate coating and avoid damage to the substrate surface before substrate coating, thereby affecting the continuity of the conductive layer coating.

[0041] Another specific embodiment of this utility model provides a perovskite solar cell, which includes at least the above-mentioned conductive film.

[0042] Specifically, the conductive film in this invention has a high hole mobility, which can improve the carrier transport efficiency in perovskite solar cell devices, and the designed film structure has a good water vapor barrier effect, which can extend the service life of photo-perovskite solar cell devices to a certain extent.

[0043] The present invention will be further described in detail below with reference to specific embodiments.

[0044] Example 1

[0045] In this embodiment, the conductive film structure includes a base layer. On one side of the base layer, a first hardening layer, a transparent conductive layer, and a hole transport layer are stacked in sequence. On the other side of the base layer, a second hardening layer and a water vapor barrier layer are stacked in sequence.

[0046] The substrate is PET with a thickness of 125 μm. Both the first and second hardening layers are made of acrylic resin-based curing resin with a thickness of approximately 2 μm. The transparent conductive layer is ITO sputtered by magnetron sputtering with a thickness of approximately 150 nm. The hole transport layer is nickel oxide sputtered by magnetron sputtering with a thickness of approximately 40 nm. The moisture barrier layer is silicon oxide sputtered by magnetron sputtering with a thickness of 150 nm.

[0047] Example 2

[0048] In this embodiment, the conductive film structure includes a base layer. On one side of the base layer, a first hardening layer, a transparent conductive layer, and a hole transport layer are stacked in sequence. On the other side of the base layer, a second hardening layer and a water vapor barrier layer are stacked in sequence.

[0049] The substrate is PET with a thickness of 125 μm. Both the first and second hardening layers are made of acrylic resin-based curing resin with a thickness of approximately 2 μm. The transparent conductive layer is ITO sputtered by magnetron sputtering with a thickness of approximately 150 nm. The hole transport layer is nickel oxide sputtered by magnetron sputtering with a thickness of approximately 10 nm. The moisture barrier layer is silicon oxide sputtered by magnetron sputtering with a thickness of 150 nm.

[0050] Example 3

[0051] In this embodiment, the conductive film structure includes a base layer. On one side of the base layer, a first hardening layer, a transparent conductive layer, and a hole transport layer are stacked in sequence. On the other side of the base layer, a second hardening layer and a water vapor barrier layer are stacked in sequence.

[0052] The substrate is PET with a thickness of 125 μm. Both the first and second hardening layers are made of acrylic resin-based curing resin with a thickness of approximately 2 μm. The transparent conductive layer is ITO sputtered by magnetron sputtering with a thickness of approximately 150 nm. The hole transport layer is nickel oxide sputtered by magnetron sputtering with a thickness of approximately 80 nm. The moisture barrier layer is silicon oxide sputtered by magnetron sputtering with a thickness of 150 nm.

[0053] Example 4

[0054] In this embodiment, the conductive film structure includes a base layer. On one side of the base layer, a first hardening layer, a transparent conductive layer, and a hole transport layer are stacked in sequence. On the other side of the base layer, a second hardening layer and a water vapor barrier layer are stacked in sequence.

[0055] The substrate is PET with a thickness of 125 μm. Both the first and second hardening layers are made of acrylic resin-based hardened resin with a thickness of approximately 2 μm. The transparent conductive layer is ITO sputtered by magnetron sputtering with a thickness of approximately 150 nm. The hole transport layer is nickel oxide sputtered by magnetron sputtering with a thickness of approximately 40 nm. The moisture barrier layer is aluminum oxide sputtered by magnetron sputtering with a thickness of 100 nm.

[0056] Comparative Example 1

[0057] In this comparative example, the conductive film structure includes a base layer, on one side of which a first hardening layer, a transparent conductive layer, and a hole transport layer are stacked sequentially, and on the other side of the base layer a second hardening layer and a water vapor barrier layer are stacked sequentially.

[0058] The substrate is PET with a thickness of 125 μm. Both the first and second hardening layers are made of acrylic resin-based curing resin with a thickness of approximately 2 μm. The transparent conductive layer is ITO sputtered by magnetron sputtering with a thickness of approximately 150 nm. The hole transport layer is nickel oxide, prepared using a conventional solution spin-coating method, with a thickness of approximately 40 nm. The moisture barrier layer is silicon oxide sputtered by magnetron sputtering with a thickness of 150 nm.

[0059] Comparative Example 2

[0060] In this comparative example, the conductive film structure includes a base layer, on one side of which a first hardening layer, a transparent conductive layer, and a hole transport layer are stacked sequentially, and on the other side of the base layer a second hardening layer is disposed.

[0061] The substrate is PET with a thickness of 125 μm. Both the first and second hardening layers are made of a hardened resin primarily composed of acrylic resin, with a thickness of approximately 2 μm. The transparent conductive layer is ITO sputtered by magnetron sputtering, with a thickness of approximately 150 nm. The hole transport layer is nickel oxide sputtered by magnetron sputtering, with a thickness of approximately 40 nm.

[0062] Performance tests were conducted on the conductive films in each embodiment and comparative example:

[0063] Mobility test: The test method is the Hall effect test method, and the test instrument is the Ecopia HMS-3000 Hall effect tester.

[0064] Water vapor barrier effect test: refer to GB / T 1037-2021.

[0065] Table 1 Test results of conductive film performance

[0066]

[0067] Comparing Example 1 and Comparative Example 1, it can be seen that the nickel oxide thin film formed by magnetron sputtering with ITO integral deposition has high film quality, fewer grain boundaries, and relatively low defect density, providing a smoother transport path for charge carriers, and its mobility can reach 8.9 cm⁻¹. 2 / (V·s), which is much higher than the 0.9 cm⁻¹ of nickel oxide thin films prepared by solution method. 2 / (V·s), and the high-quality nickel oxide film also improves the overall water vapor barrier performance.

[0068] Comparing Example 1 and Comparative Example 2, it can be seen that adding a water vapor barrier layer can significantly improve the water vapor barrier performance of the film, which provides a key guarantee for the long-term stable and efficient operation of the device.

[0069] It will be apparent to those skilled in the art that this disclosure is not limited to the details of the exemplary embodiments described above, and that this disclosure can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of this disclosure is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within this disclosure. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0070] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A conductive film, characterized in that, The conductive film includes a base layer, on one side of which a transparent conductive layer and a hole transport layer are stacked sequentially, and on the other side of which a water vapor barrier layer is disposed. The hole transport layer is any one of nickel oxide plating, molybdenum oxide plating, copper oxide plating, and tungsten oxide plating, or a mixed plating of at least two of nickel oxide, molybdenum oxide, copper oxide, and tungsten oxide. The water vapor barrier layer is any one of silicon oxide coating, silicon nitride coating, aluminum oxide coating, titanium nitride coating, and titanium oxide coating.

2. The conductive film according to claim 1, characterized in that, The thickness of the water vapor barrier layer is 30nm-200nm.

3. The conductive film according to claim 1, characterized in that, The thickness of the hole transport layer is 10nm-80nm.

4. The conductive film according to claim 1, characterized in that, The transparent conductive layer is either an ITO coating or an FTO coating.

5. The conductive film according to claim 4, characterized in that, The thickness of the transparent conductive layer is 3nm-400nm.

6. The conductive film according to claim 1, characterized in that, A first hardening layer is further disposed between the base layer and the transparent conductive layer. The first hardening layer is an acrylic resin layer with a thickness of 1μm-5μm.

7. The conductive film according to claim 1, characterized in that, A second hardening layer is provided between the base layer and the moisture barrier layer. The second hardening layer is an acrylic resin layer with a thickness of 1μm-5μm.

8. The conductive film according to claim 1, characterized in that, The substrate layer is any one of PET layer, TAC layer, PMMA layer, PC layer, COP layer, and CPI layer, with a thickness of 23μm-250μm.

9. A perovskite solar cell, characterized in that, The perovskite solar cell includes at least the conductive film as described in any one of claims 1-8.

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