Organic light emitting display device

Abstract

The utility model discloses an organic light emitting display device. Wherein, the organic light emitting display device includes the substrate, the anode of setting in the pixel area, fills the first insulating layer between the pixel area, sets on the second insulating layer of the first insulating layer, sets on the third insulating layer of the second insulating layer, sets on the fourth insulating layer of the third insulating layer and sets on the fifth insulating layer of the fourth insulating layer, and the material of second insulating layer and the material of third insulating layer are different. The organic light emitting display device provided by the utility model embodiment, in the process of etching and forming third insulating layer, fourth insulating layer and fifth insulating layer, can utilize second insulating layer to block etching, so that the first insulating layer is exempted from etching damage, improves the quality and flatness of the subsequent film layer deposited on the first insulating layer, improves the luminous efficiency and uniformity.

Description

[0001] This patent application claims priority to Chinese application No. 202411434045.X, filed on October 14, 2024, entitled "Organic Light Emitting Display Device and Method for Manufacturing the Same Thereof," the entire contents of which are incorporated herein by reference. Technical Field

[0002] This utility model relates to the field of display technology, and in particular to an organic light-emitting display device. Background Technology

[0003] Organic light-emitting diode (OLED) displays are devices that use organic light-emitting diodes (OLEDs) as display pixels. Compared to traditional liquid crystal displays, OLEDs are increasingly popular in the market due to their numerous advantages, such as self-illumination, low power consumption, good color performance, and applicability to flexible displays.

[0004] Figure 1 This is a partial cross-sectional structural diagram of an organic light-emitting display device in related technologies, such as... Figure 1 As shown, an array of pixels 20' is arranged on one side of the substrate 10'. The pixel 20' includes an anode 11', an organic light-emitting layer 18', and a cathode 19' stacked together. When electrons and holes are injected into the organic light-emitting layer 18' from the cathode 19' and the anode 11' respectively, the electrons and holes recombine in the organic light-emitting layer 18' and release energy to emit light. The material of the organic light-emitting layer 18' can determine the emission color of the pixel 20'.

[0005] A pixel definition layer 21' is provided on the upper layer of the anode 11'. The pixel definition layer 21' is located between adjacent pixels 20' and is used to divide and define each pixel region.

[0006] An organic light-emitting layer 18' is formed on top of the pixel definition layer 21'. The organic light-emitting layer 18' includes a first carrier adjustment layer 181', a light-emitting material layer 182', and a second carrier adjustment layer 183' stacked sequentially. Both the first carrier adjustment layer 181' and the second carrier adjustment layer 183' are integral layers, meaning that the first carrier adjustment layer 181' and the second carrier adjustment layer 183' are continuous film layers between each pixel 20'.

[0007] In this process, a leakage current is generated on the first carrier adjustment layer 181'. This leakage current flows through the light-emitting material layer 182' located above the pixel definition layer 21' to the cathode 19', causing light leakage at the corners of the pixel 20'. This leakage current also weakens the current required for the pixel 20' to emit light normally, thereby causing a decrease in the overall brightness of the pixel 20'. Utility Model Content

[0008] This invention provides an organic light-emitting display device to solve problems such as light leakage at the corners of pixels and uneven display within pixels.

[0009] This utility model provides an organic light-emitting display device, comprising:

[0010] A substrate, the substrate comprising a plurality of pixel regions spaced apart;

[0011] An anode is disposed within the pixel region;

[0012] A first insulating layer filling the spaces between the pixel regions;

[0013] A second insulating layer disposed on the first insulating layer;

[0014] A third insulating layer is disposed on the second insulating layer, wherein the material of the second insulating layer is different from the material of the third insulating layer;

[0015] A fourth insulating layer disposed on the third insulating layer;

[0016] A fifth insulating layer is disposed on the fourth insulating layer, the edge of the fifth insulating layer extending beyond the edge of the fourth insulating layer.

[0017] The organic light-emitting display device provided in this embodiment of the invention has a third, fourth, and fifth insulating layer stacked on a first insulating layer filling the pixel areas. The edge of the fifth insulating layer extends beyond the edge of the fourth insulating layer, thereby cutting off the first carrier adjustment layer in the organic light-emitting layer at the edge of the fifth insulating layer. This prevents the first carrier adjustment layer from forming longitudinal leakage current between adjacent pixel areas, improves the problem of light leakage at the corners of the pixels, and ensures the current required for normal pixel light emission, improving the accuracy of pixel brightness control. Furthermore, by setting a second insulating layer between the first and third insulating layers, and the material of the second insulating layer is different from that of the third insulating layer, the second insulating layer blocks the etching process during the formation of the third, fourth, and fifth insulating layers, thus protecting the first insulating layer from etching damage. This improves the quality and smoothness of subsequent films (e.g., organic light-emitting layers) deposited on the first insulating layer, and improves luminous efficiency and uniformity.

[0018] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of this utility model, nor is it intended to limit the scope of this utility model. Other features of this utility model will become readily apparent from the following description. Attached Figure Description

[0019] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 This is a schematic diagram of a partial cross-sectional structure of an organic light-emitting display device in related technologies;

[0021] Figure 2 A schematic diagram of the structure of an organic light-emitting display device provided in an embodiment of this utility model;

[0022] Figure 3 for Figure 2 A schematic diagram of the cross-sectional structure along the A-A' direction;

[0023] Figure 4 This is a partial cross-sectional structural diagram of an organic light-emitting display device provided in an embodiment of the present invention;

[0024] Figure 5 A schematic diagram of a pixel film structure provided for an embodiment of this utility model;

[0025] Figure 6 A schematic diagram of another pixel film structure provided in an embodiment of this utility model;

[0026] Figure 7 A schematic flowchart illustrating a method for manufacturing an organic light-emitting display device according to an embodiment of this utility model;

[0027] Figure 8 A schematic flowchart illustrating another method for manufacturing an organic light-emitting display device provided in an embodiment of this utility model;

[0028] Figure 9 A partial cross-sectional structural diagram of another organic light-emitting display device provided in an embodiment of this utility model;

[0029] Figure 10 A schematic flowchart illustrating a method for manufacturing an organic light-emitting display device according to an embodiment of the present invention;

[0030] Figure 11 A schematic diagram of another organic light-emitting display device provided in an embodiment of this utility model;

[0031] Figure 12 for Figure 11 A schematic diagram of the cross-sectional structure along the B-B' direction;

[0032] Figure 13A schematic diagram of a vapor deposition process provided for related technologies;

[0033] Figure 14 This is a schematic diagram of another vapor deposition process provided in an embodiment of the present invention;

[0034] Figure 15 A partial cross-sectional structural diagram of another organic light-emitting display device provided in this embodiment of the present invention;

[0035] Figure 16 A partial cross-sectional structural diagram of another organic light-emitting display device provided in this embodiment of the present invention;

[0036] Figure 17 A partial cross-sectional structural diagram of another organic light-emitting display device provided in this embodiment of the present invention;

[0037] Figure 18 A schematic flowchart illustrating a method for manufacturing an organic light-emitting display device according to an embodiment of the present invention;

[0038] Figure 19 A partial cross-sectional structural diagram of another organic light-emitting display device provided in this embodiment of the present invention;

[0039] Figure 20 A partial cross-sectional structural diagram of another organic light-emitting display device provided in this embodiment of the present invention;

[0040] Figure 21 A partial cross-sectional structural diagram of another organic light-emitting display device provided in this embodiment of the present invention;

[0041] Figure 22 A schematic flowchart illustrating a method for manufacturing an organic light-emitting display device according to an embodiment of the present invention;

[0042] Figures 23-33 A schematic flowchart illustrating a method for manufacturing an organic light-emitting display device according to an embodiment of this utility model. Detailed Implementation

[0043] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the protection scope of the present invention.

[0044] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this utility model are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the utility model described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0045] Figure 2 This is a schematic diagram of the structure of an organic light-emitting display device provided in an embodiment of the present invention. Figure 3 for Figure 2 A schematic diagram of the cross-sectional structure along the A-A' direction, as shown below. Figure 2 and Figure 3 As shown, the organic light-emitting display device provided in this embodiment of the present invention includes:

[0046] The substrate 10 includes a plurality of pixel regions 101 spaced apart.

[0047] An anode 11 is set within pixel region 101.

[0048] A first insulating layer 12 is filled between pixel regions 101.

[0049] The second insulating layer 13 is disposed on the first insulating layer 12.

[0050] A third insulating layer 14 is disposed on the second insulating layer 13, and the materials of the second insulating layer 13 and the third insulating layer 14 are different.

[0051] The fourth insulating layer 15 is disposed on the third insulating layer 14.

[0052] A fifth insulating layer 16 is disposed on the fourth insulating layer 15, and the edge of the fifth insulating layer 16 extends beyond the edge of the fourth insulating layer 15.

[0053] Specifically, such as Figure 2 and Figure 3 As shown, the substrate 10 can be a driving substrate, and multiple pixel regions 101 are defined on the substrate 10 in an array.

[0054] Figure 4 This is a partial cross-sectional structural diagram of an organic light-emitting display device provided in an embodiment of the present invention, as shown below. Figure 4As shown, optionally, the substrate 10 includes a substrate 31, on which a driving transistor T corresponding to the pixel region 101 is disposed. The driving transistor T is connected to the anode 11, and the driving transistor T can provide the pixel with a working signal corresponding to the light emission brightness through the anode 11 to drive the pixel to emit light.

[0055] The driving transistor T may include an active region T1, a gate T2 and a source / drain electrode layer T3 stacked together. The active region T1 may be formed in the substrate 31, but is not limited thereto. This embodiment of the present invention does not make specific limitations in this regard.

[0056] Continue to refer to Figures 2-4 An anode 11 is formed in the pixel region 101 on the substrate 10. The anodes 11 corresponding to each pixel region 101 are electrically isolated from each other. The anode 11 serves as an electrode of the pixel and can inject carriers (such as holes) into the pixel under the drive of a positive voltage from an external power supply.

[0057] Furthermore, such as Figure 3 and Figure 4 As shown, a first insulating layer 12 is filled between adjacent anodes 11. In the transverse direction, the first insulating layer 12 is located between two adjacent anodes 11. The first insulating layer 12 helps to ensure electrical insulation between two adjacent anodes 11. At the same time, since the anodes 11 have a certain thickness, a pit is formed between the two anodes 11. Filling the first insulating layer 12 between two adjacent anodes 11 also helps to reduce the height difference between the area where the anodes 11 are located and the area where the pit is located, so that the subsequent film layer can be prepared on a relatively flat surface, thereby ensuring the continuity of the subsequent film layer.

[0058] The material of the first insulating layer 12 may include at least one of silicon oxide (SiO) and silicon nitride (SiN). Both silicon oxide and silicon nitride have high resistivity and can play a good insulating role between adjacent anodes 11. At the same time, silicon oxide and silicon nitride also have strong chemical stability and excellent high temperature stability, and are not easily corroded by moisture, oxygen and other harmful gases in the environment. They can maintain good insulation performance in high temperature environments, which is conducive to extending the service life of the device.

[0059] Continue to refer to Figure 3 and Figure 4 A third insulating layer 14, a fourth insulating layer 15, and a fifth insulating layer 16 are stacked on the first insulating layer 12. The third insulating layer 14, the fourth insulating layer 15, and the fifth insulating layer 16 are all disposed around the pixel area 101. The area defined by them can be any shape such as rectangle, polygon, or circle. This embodiment of the utility model does not make specific limitations in this regard.

[0060] Furthermore, the fifth insulating layer 16 covers the fourth insulating layer 15, and the edge of the fifth insulating layer 16 extends beyond the edge of the fourth insulating layer 15. At this time, the distance between the vertical projection of the edge of the fifth insulating layer 16 on the substrate 10 and the vertical projection of the edge of the fourth insulating layer 15 on the substrate 10 is greater than 0. That is, the length of the fifth insulating layer 16 in the lateral direction is greater than the length of the fourth insulating layer 15 in the lateral direction, or in other words, the projected area of ​​the fifth insulating layer 16 on the substrate 10 is greater than the projected area of ​​the fourth insulating layer 15 on the substrate 10. The opening formed on the fifth insulating layer 16 is smaller than the opening formed on the fourth insulating layer 15, so that the opening edge of the fifth insulating layer 16 protrudes further into the light-emitting area of ​​the pixel than the opening edge of the fourth insulating layer 15. The opening edge of the fourth insulating layer 15 is recessed relative to the opening edge of the fifth insulating layer 16 towards the side away from the light-emitting area of ​​the pixel, thereby forming an eaves structure above the edge of the fourth insulating layer 15.

[0061] Continue to refer to Figure 3 and Figure 4 The pixel region 101 also includes an organic light-emitting layer 18 disposed on the anode 11. The organic light-emitting layer 18 includes a first carrier adjustment layer 181, a light-emitting material layer 182 and a second carrier adjustment layer 183 disposed in sequence.

[0062] During the fabrication of the organic light-emitting layer 18, the eaves structure at the edge of the fifth insulating layer 16 will block part of the upper surface of the third insulating layer 14, thereby forming a blocking area below the eaves structure at the edge of the fifth insulating layer 16. The first carrier adjustment layer 181, which is prone to leakage current in the organic light-emitting layer 18, is partially deposited on the upper surface of the fifth insulating layer 16 and partially deposited on the upper surface of the third insulating layer 14. However, the first carrier adjustment layer 181 cannot be deposited in the blocking area, so the first carrier adjustment layer 181 will be cut off at the blocking area, so that the first carrier adjustment layer 181 deposited on the upper surface of the fifth insulating layer 16 and the first carrier adjustment layer 181 deposited on the upper surface of the third insulating layer 14 cannot form a connection at the blocking area and are disconnected.

[0063] This configuration prevents the first carrier adjustment layer 181 from forming longitudinal leakage current between adjacent pixel regions 101, improves the problem of light leakage at the corners of the pixel, and ensures that the current required for the pixel to emit light normally is supplied, which is beneficial to improving the accuracy of pixel brightness control.

[0064] Figure 5 A schematic diagram of a pixel film structure provided for an embodiment of this utility model is shown below. Figure 5As shown, optionally, the organic light-emitting layer 18 is located between the anode 11 and the cathode 19, the first carrier adjustment layer 181 is located between the anode 11 and the light-emitting material layer 182, and the second carrier adjustment layer 183 is located between the cathode 19 and the light-emitting material layer 182. The first carrier adjustment layer 181 may include a hole injection layer HIL and a hole transport layer HTL, and the second carrier adjustment layer 183 may include an electron transport layer ETL and an electron injection layer EIL.

[0065] The hole injection layer HIL is located on the anode 11 and is used to reduce the energy barrier from the anode 11 to the organic light-emitting layer 18, so that the holes can be transferred from the anode 11 to the hole transport layer HTL more effectively, thereby improving the hole injection efficiency and thus improving the luminous efficiency and brightness of the pixel.

[0066] The hole transport layer HTL is located on the hole injection layer HIL and is used to effectively transport holes injected from the anode 11 to the light-emitting material layer 182, ensuring that holes and electrons in the light-emitting material layer 182 can effectively recombine to generate photons.

[0067] The electron transport layer (ETL) is located on the light-emitting material layer 182 and is used to efficiently transport electrons from the cathode 19 to the light-emitting material layer 182 to ensure that electrons can be quickly and efficiently transported to the light-emitting material layer 182 and recombine with holes to emit photons.

[0068] The electron injection layer (EIL) is located on the electron transport layer (ETL) and is used to reduce the energy barrier for electrons to be injected from the cathode 19 into the luminescent material layer 182, thereby improving the electron injection efficiency. At the same time, the electron injection layer (EIL) can ensure good interfacial contact and energy level matching with both the cathode 19 and the electron transport layer (ETL), ensuring that electrons can be easily injected into the luminescent material layer 182 to participate in the luminescence process.

[0069] Continue to refer to Figures 3-5 For example, the hole injection layer HIL and the hole transport layer HTL can be disconnected in the shielding area below the eaves structure at the edge of the fifth insulating layer 16 to prevent the hole injection layer HIL and the hole transport layer HTL from forming longitudinal leakage current between adjacent pixel regions 101, thereby improving the problem of light leakage at the corners of the pixel and ensuring the current required for the pixel to emit light normally, which is beneficial to improving the accuracy of pixel brightness control.

[0070] Figure 6 A schematic diagram of another pixel film structure provided in an embodiment of this utility model is shown below. Figure 6As shown, optionally, the pixel can adopt a tandem organic light-emitting diode (TANDEM) structure. The TANDEM connects two or more light-emitting material layers in series through a charge generation layer (CGL). The charge generation layer can reduce the driving voltage and generate new charge carriers. The multiple light-emitting material layers in series can increase the luminous efficiency of the pixel by a factor of two. At the same time, the current density of the TANDEM is reduced at the same brightness, which can significantly increase the lifetime of the device.

[0071] For example, such as Figure 6 As shown, the charge generation layer is composed of an N-type charge generation layer (N-CGL) and a P-type charge generation layer (P-CGL). The N-type charge generation layer can be an organic electron transport material doped with a metal. The P-type charge generation layer can be an organic hole transport material doped with a P-type luminescent dopant (p-dopant, PD).

[0072] Furthermore, such as Figure 6 As shown, taking two tandem light-emitting material layers as an example, the first carrier adjustment layer 181 may include a hole injection layer HIL and a hole transport layer HTL, and the second carrier adjustment layer 183 may include an electron transport layer ETL and an electron injection layer EIL. A hole blocking layer HBL, an N-type charge generation layer N-CGL, a P-type charge generation layer P-CGL, and a hole transport layer HTL may be stacked sequentially between the two light-emitting material layers 182, but it is not limited to this.

[0073] In this design, both the N-type charge generation layer (N-CGL) and the P-type charge generation layer (P-CGL) are continuous layers, meaning they are continuous between pixels. When the organic light-emitting display device is operating, leakage current can easily flow laterally through the N-type and P-type charge generation layers, leading to crosstalk problems.

[0074] Continue to refer to Figure 3 and Figure 6 Optionally, the N-type charge generation layer N-CGL, the P-type charge generation layer P-CGL, the hole blocking layer HBL, the light-emitting material layer 182, and the first carrier adjustment layer 181 located below the N-type charge generation layer N-CGL can be disconnected in the shielding area below the eaves structure at the edge of the fifth insulating layer 16 to prevent the N-type charge generation layer N-CGL, the P-type charge generation layer P-CGL, and their underlying film layers from forming leakage current between adjacent pixel regions 101, thereby improving the crosstalk problem.

[0075] In other embodiments, the specific film structure in the first carrier adjustment layer 181 and the second carrier adjustment layer 183, as well as the specific film structure separated by the eaves structure at the edge of the fifth insulating layer 16, can be set according to actual needs, and this utility model embodiment does not make specific limitations in this regard.

[0076] Figure 7 A schematic flowchart illustrating a method for manufacturing an organic light-emitting display device according to an embodiment of this utility model is shown below. Figure 7 As shown, in related technologies, when fabricating organic light-emitting display devices, such as Figure 7 As shown in (a), a third insulating material layer 140, a fourth insulating material layer 150, and a fifth insulating material layer 160 are sequentially deposited on the first insulating layer 12. Figure 7 As shown in (b), the third insulating material layer 140, the fourth insulating material layer 150, and the fifth insulating material layer 160 are etched to form the third insulating layer 14, the fourth insulating layer 15, and the fifth insulating layer 16. Figure 7 As shown in (c), the sidewalls of the fourth insulating layer 15 are etched so that the edge of the fifth insulating layer 16 extends beyond the edge of the fourth insulating layer 15.

[0077] The inventors discovered through research that the etching process can damage the first insulating layer 12 beneath the third insulating layer 14, thereby affecting the quality and smoothness of subsequent film layers (such as organic light-emitting layers) deposited thereon, and consequently affecting the luminous efficiency and uniformity.

[0078] Based on the above technical issues, such as Figure 3 and Figure 4 As shown, in this embodiment, a second insulating layer 13 is provided between the first insulating layer 12 and the third insulating layer 14.

[0079] Figure 8 A schematic flowchart illustrating another method for manufacturing an organic light-emitting display device according to an embodiment of this utility model is shown below. Figure 8 As shown in this embodiment, during the fabrication of the organic light-emitting display device, as follows: Figure 8 As shown in (a), a second insulating material layer 130, a third insulating material layer 140, a fourth insulating material layer 150, and a fifth insulating material layer 160 can be sequentially deposited on the first insulating layer 12. Figure 8 As shown in (b), the third insulating material layer 140, the fourth insulating material layer 150, and the fifth insulating material layer 160 are etched to form the third insulating layer 14, the fourth insulating layer 15, and the fifth insulating layer 16. Figure 8 As shown in (c), the sidewalls of the fourth insulating layer 15 are etched so that the edge of the fifth insulating layer 16 extends beyond the edge of the fourth insulating layer 15. Figure 8As shown in (d), the second insulating material layer 130 is etched to form the second insulating layer 13.

[0080] The material of the second insulating layer 13 is different from that of the third insulating layer 14, that is, the material of the second insulating material layer 130 is different from that of the fourth insulating material layer 150. During the etching process of the third insulating material layer 140, the fourth insulating material layer 150 and the fifth insulating material layer 160, the second insulating material layer 130 can protect the first insulating layer 12 below it due to its different material, so that the first insulating layer 12 is not damaged by etching, thereby improving the quality and smoothness of the subsequent film layer (such as the organic light-emitting layer) deposited on the first insulating layer 12, and improving the luminous efficiency and uniformity.

[0081] Optionally, the material of the fifth insulating layer 16 includes at least one of silicon nitride (SiN), silicon oxide (SiO), silicon oxynitride (SiON), and amorphous silicon (a-Si).

[0082] And / or,

[0083] The material of the fourth insulating layer 15 includes at least one of silicon nitride (SiN), silicon oxide (SiO), silicon oxynitride (SiON), and amorphous silicon (a-Si).

[0084] And / or,

[0085] The material of the third insulating layer 14 includes at least one of silicon nitride (SiN), silicon oxide (SiO), silicon oxynitride (SiON), and amorphous silicon (a-Si).

[0086] Among them, silicon nitride (SiN), silicon oxide (SiO), and silicon oxynitride (SiON) have high resistivity, which can provide good insulation for the first carrier adjustment layer 181 located on the upper surface of the third insulating layer 14. At the same time, silicon nitride (SiN), silicon oxide (SiO), and silicon oxynitride (SiON) also have good chemical and thermal stability, and can maintain good insulation performance in high-temperature environments, which is beneficial to extending the service life of the device.

[0087] Amorphous silicon (a-Si) can be deposited using various deposition methods (such as plasma-enhanced chemical vapor deposition, PECVD), exhibiting good process compatibility and mechanical stability. It can provide good structural support, which helps ensure the stability of the structure in subsequent processes.

[0088] In summary, the organic light-emitting display device provided by this utility model stacks a third, fourth, and fifth insulating layer on a first insulating layer filling the pixel areas, with the edge of the fifth insulating layer extending beyond the edge of the fourth insulating layer. This cuts off the first carrier adjustment layer in the organic light-emitting layer at the edge of the fifth insulating layer, preventing the first carrier adjustment layer from forming longitudinal leakage current between adjacent pixel areas, improving the problem of light leakage at the corners of the pixels, and ensuring the current required for normal pixel light emission, thus improving the accuracy of pixel brightness control. Furthermore, by setting a second insulating layer between the first and third insulating layers, and using a different material from the third insulating layer, the second insulating layer blocks etching during the etching process of forming the third, fourth, and fifth insulating layers, protecting the first insulating layer from etching damage. This improves the quality and smoothness of subsequent films (e.g., organic light-emitting layers) deposited on the first insulating layer, and enhances luminous efficiency and uniformity.

[0089] Continue to refer to Figure 8 Optionally, the material of the second insulating layer 13 is different from the material of the first insulating layer 12.

[0090] Specifically, such as Figure 8 As shown in (d), after forming the third insulating layer 14, the fourth insulating layer 15, and the fifth insulating layer 16, the second insulating material layer 130 is etched to remove the second insulating material layer 130 above the anode 11, forming the second insulating layer 13. The material of the second insulating layer 13 is different from the material of the first insulating layer 12; that is, the material of the second insulating material layer 130 is different from the material of the first insulating layer 12. Therefore, during the etching of the second insulating material layer 130, an etchant with high selectivity for the material of the second insulating material layer 130 can be selected, thereby reducing damage to the first insulating layer 12 during the etching of the second insulating layer 130.

[0091] Continue to refer to Figure 8 Optionally, the thickness of the second insulating layer 13 is 5nm to 50nm.

[0092] Wherein, the thickness of the second insulating layer 13 is greater than or equal to 5 nm. In this case, the second insulating material layer 130 used to form the second insulating layer 13 has sufficient thickness, so that during the etching of the third insulating material layer 140, the fourth insulating material layer 150 and the fifth insulating material layer 160, it can be ensured that the second insulating material layer 130 will not be completely removed during the etching process, thereby providing sufficient protection for the first insulating layer 12.

[0093] Furthermore, if the thickness of the second insulating layer 13 is less than or equal to 50 nm, then the thickness of the second insulating material layer 130 used to form the second insulating layer 13 will not be too thick. Therefore, during the process of etching the second insulating material layer 130 to form the second insulating layer 13, the etching will not be difficult or the process complexity will not be increased due to the second insulating material layer 130 being too thick.

[0094] Optionally, the material of the second insulating layer 13 includes at least one of aluminum oxide (Al2O3), titanium oxide (TiO2), zirconium oxide (ZrO2) or hafnium oxide (HfO2).

[0095] Wherein, the material of the second insulating layer 13 is different from that of the third insulating layer 14 and the first insulating layer 12, so that the second insulating material layer 130 used to form the second insulating layer 13 is different from that of the third insulating layer 14 and the first insulating layer 12, so as to achieve etching selectivity.

[0096] like Figure 8 As shown, during the etching of the third insulating material layer 140, the fourth insulating material layer 150, and the fifth insulating material layer 160, an etchant with high selectivity for the materials of the third insulating material layer 140, the fourth insulating material layer 150, and the fifth insulating material layer 160 can be selected. During the etching process, the second insulating material layer 130 can protect the first insulating layer 12 below it, reduce damage to the first insulating layer 12, and thus protect the integrity of the structure of the first insulating layer 12.

[0097] Meanwhile, aluminum oxide (Al2O3), titanium oxide (TiO2), zirconium oxide (ZrO2) and hafnium oxide (HfO2) have good chemical stability and mechanical strength, which helps to resist the corrosion of the external environment and extend the service life of the device.

[0098] Continue to refer to Figure 3 and Figure 4 Optionally, the vertical projection of the second insulating layer 13 on the substrate 10 covers the vertical projection of the third insulating layer 14 on the substrate 10.

[0099] Among them, such as Figure 3 and Figure 4 As shown, the edge of the second insulating layer 13 can extend beyond the edge of the third insulating layer 14, that is, the length of the second insulating layer 13 in the lateral direction can be greater than the length of the third insulating layer 14 in the lateral direction, or in other words, the projected area of ​​the second insulating layer 13 on the substrate 10 is greater than the projected area of ​​the third insulating layer 14 on the substrate 10.

[0100] With this configuration, when the first carrier adjustment layer 181 is fabricated, the first carrier adjustment layer 181 will be raised sequentially at the edge of the second insulating layer 13 and the edge of the third insulating layer 14. This can extend the transmission path length of the current on the first carrier adjustment layer 181, which is beneficial to reduce the leakage current between adjacent pixel regions 101.

[0101] Figure 9 A partial cross-sectional structural diagram of another organic light-emitting display device provided in an embodiment of this utility model is shown below. Figure 9 As shown, optionally, the vertical projection of the second insulating layer 13 on the substrate 10 and the vertical projection of the third insulating layer 14 on the substrate 10 coincide.

[0102] The second insulating layer 13 and the third insulating layer 14 are arranged so that their vertical projections on the substrate 10 coincide. When the second insulating layer 13 is prepared, the third insulating layer 14 can be directly used as a mask for etching.

[0103] Specifically, Figure 10 A schematic flowchart illustrating a method for manufacturing another organic light-emitting display device according to an embodiment of this utility model is shown below. Figure 10 As shown in (a), the second insulating material layer 130 is etched to form the second insulating layer 13. The third insulating layer 14 can be used directly as a mask to etch the second insulating material layer 130 without the need for an additional mask, thereby reducing manufacturing costs, simplifying the process, and improving production efficiency.

[0104] At the same time, such as Figure 10 As shown in (b), by using the third insulating layer 14 as a mask, higher etching accuracy can be provided, ensuring that the edge of the second insulating layer 13 is aligned with the edge of the third insulating layer 14, thereby reducing problems such as interlayer misalignment caused by process errors due to additional masking steps.

[0105] Figure 11 This is a schematic diagram of another organic light-emitting display device provided in an embodiment of the present invention. Figure 12 for Figure 11 A schematic diagram of the cross-sectional structure along the B-B' direction, as shown below. Figure 11 and Figure 12 As shown, optionally, the pixel region 101 also includes an organic light-emitting layer 18 disposed on the anode 11. The organic light-emitting layer 18 includes an organic light-emitting layer 18 that emits multiple colors of light. In the row or column direction, the light-emitting colors of the organic light-emitting layers 18 in adjacent pixel regions 101 are different.

[0106] Specifically, such as Figure 11 and Figure 12As shown, an organic light-emitting layer 18 is disposed on the anode 11, and a cathode 19 is disposed on the organic light-emitting layer 18. When electrons and holes are injected into the organic light-emitting layer 18 from the cathode 19 and the anode 11 respectively, the electrons and holes recombine in the organic light-emitting layer 18 to release energy and emit light.

[0107] The material of the organic light-emitting layer 18 determines the color of the light emitted by the organic light-emitting layer 18.

[0108] like Figure 11 and Figure 12 As shown, pixel region 101 can be divided into red pixel region 101R, green pixel region 101G, and blue pixel region 101B. Organic light-emitting layer 18 may include red organic light-emitting layer 18R disposed in red pixel region 101R, green organic light-emitting layer 18G disposed in green pixel region 101G, and blue organic light-emitting layer 18B disposed in blue pixel region 101B to realize color image display, but is not limited to this. In some embodiments, organic light-emitting layer 18 may also include white or other colored organic light-emitting layers in addition to the organic light-emitting layers of the above three colors.

[0109] In this organic light-emitting display device, the red organic light-emitting layer 18R includes a red light-emitting material layer 182R, the green organic light-emitting layer 18G includes a green light-emitting material layer 182G, and the blue organic light-emitting layer 18B includes a blue light-emitting material layer 182B. The organic materials of the red light-emitting material layer 182R, the green light-emitting material layer 182G, and the blue light-emitting material layer 182B are usually different.

[0110] In related technologies, the fabrication process of organic light-emitting display devices with the aforementioned light-emitting structure typically requires the use of fine metal masks (FMMs) to deposit red, green, and blue light-emitting material layers. Due to manufacturing deviations, alignment deviations, and thermal deformation issues inherent in the fine metal mask, problems such as significant deviations between the film deposition position of the organic light-emitting material layer and the preset position can occur. Furthermore, the high cost of fine metal masks leads to high manufacturing costs for organic light-emitting display devices. Moreover, for high-resolution microdisplays, due to the difficulty of the process, it is difficult for fine metal masks to achieve the size of ultra-small metal cutouts.

[0111] In this embodiment, organic light-emitting layers 18 of different colors can be formed in different pixel regions 101 through an etching process. At least a portion of the common film layers in the organic light-emitting layers 18 are divided by the fifth insulating layer 16 and the fourth insulating layer 15, so that at least a portion of the common film layers between adjacent pixel regions 101 are isolated from each other, thereby reducing leakage current between adjacent pixel regions 101. Notably, a fine metal mask (FMM) is not required, thus avoiding problems such as fabrication deviations, alignment deviations, and thermal deformation inherent in the fine metal mask itself, which can lead to significant deviations between the film formation position of the organic light-emitting material layer and the preset position. This helps meet users' high-resolution requirements for organic light-emitting display devices. Furthermore, eliminating the use of a fine metal mask also reduces the manufacturing cost of the organic light-emitting display device.

[0112] Continue to refer to Figure 3 and Figure 12 Optionally, the bottom surface of the fifth insulating layer 16 and the side surface of the fifth insulating layer 16 have a first included angle θ1, the first included angle θ1 being in the range of 20° to 60°.

[0113] Specifically, Figure 13 A schematic diagram of a vapor deposition process is provided for related technologies, such as... Figure 13 As shown, during the vapor deposition process, the evaporation source 40 and the substrate 10 have a certain relative movement. The vapor deposition material is heated and vaporized in the evaporation source 40, sprayed through the nozzle 41, and then evaporated onto the substrate 10 through the opening formed by the fifth insulating layer 16 to form the corresponding organic light-emitting layer 18. During the vapor deposition process, the vapor deposition material sprayed from the nozzle 41 is sprayed in a beam shape. The fifth insulating layer 16 will block the vapor deposition material. When the first included angle θ1 between the bottom surface and the side surface of the fifth insulating layer 16 toward the substrate 10 is large (for example, θ1≥90°), due to the certain thickness of the fifth insulating layer 16, the vertex 161 of the fifth insulating layer 16 near the evaporation source 40 will create a large blocking area 42. The vapor deposition material cannot be uniformly deposited in the blocking area 42, resulting in poor vapor deposition.

[0114] Continue to refer to Figure 3 and Figure 12 In this embodiment, the first included angle θ1 between the bottom surface of the fifth insulating layer 16 and the side surface of the fifth insulating layer 16 is less than or equal to 60°. The top surface of the fifth insulating layer 16 refers to the surface of the fifth insulating layer 16 away from the substrate 10, and the bottom surface of the fifth insulating layer 16 refers to the surface of the fifth insulating layer 16 close to the substrate 10.

[0115] like Figure 3 and Figure 12As shown, at this time, the width of the top surface of the fifth insulating layer 16 is smaller than the width of the bottom surface of the fifth insulating layer 16. That is, the length of the bottom surface of the fifth insulating layer 16 in the lateral direction is greater than the length of the top surface of the fifth insulating layer 16 in the lateral direction. In other words, the projected area of ​​the bottom surface of the fifth insulating layer 16 on the substrate 10 is greater than the projected area of ​​the top surface of the fifth insulating layer 16 on the substrate 10.

[0116] Figure 14 A schematic diagram of another vapor deposition process provided in an embodiment of this utility model is shown below. Figure 14 As shown, when the first included angle θ1 between the bottom surface of the fifth insulating layer 16 and the side surface of the fifth insulating layer 16 is less than or equal to 60°, the obstruction of the vapor-deposited material by the fifth insulating layer 16 can be reduced, allowing more vapor-deposited material to pass through the opening formed by the fifth insulating layer 16. This increases the area of ​​the organic light-emitting layer 18 deposited on the substrate 10, making the coverage area of ​​the organic light-emitting layer 18 closer to the designed area pattern and improving the vapor deposition accuracy of the organic light-emitting layer 18.

[0117] Furthermore, the top surface width of the fifth insulating layer 16 is a pre-determined design value based on specific requirements. The smaller the first included angle θ1 between the bottom surface and the side surface of the fifth insulating layer 16, the larger the bottom surface width of the fifth insulating layer 16 will be, and the larger the overall width of the fifth insulating layer 16 will be. Therefore, when preparing the organic light-emitting layer 18, the fifth insulating layer 16 will form a large area of ​​shielding on the material of the organic light-emitting layer 18, thereby reducing the coverage area of ​​the organic light-emitting layer 18 in the pixel region 101. This reduces the area in which the organic light-emitting layer 18 can effectively emit light, that is, the portion actually used for light emission within the pixel region 101 becomes smaller, affecting the overall brightness and energy efficiency of the display device.

[0118] In this embodiment, the first included angle θ1 between the bottom surface and the side surface of the fifth insulating layer 16 is set to be greater than or equal to 20°. This avoids the first included angle θ1 being too small, which would result in an excessively large overall width of the fifth insulating layer 16. This ensures that the overall width of the fifth insulating layer 16 is small. When preparing the organic light-emitting layer 18, the area of ​​the fifth insulating layer 16 blocking the material of the organic light-emitting layer 18 can be reduced, increasing the coverage area of ​​the organic light-emitting layer 18 in the pixel region 101. This, in turn, increases the area where the organic light-emitting layer 18 can effectively emit light, thereby improving the overall brightness and energy efficiency of the display device.

[0119] Meanwhile, the first included angle θ1 is greater than or equal to 20°, which can prevent the edge of the fifth insulating layer 16 from being too thin, thereby preventing edge damage of the fifth insulating layer 16 in subsequent processes and helping to ensure the integrity of the fifth insulating layer 16.

[0120] Continue to refer to Figure 3 and Figure 12Optionally, the thickness of the fifth insulating layer 16 is 10nm~100nm.

[0121] By setting the thickness of the fifth insulating layer 16 to be less than or equal to 100 nm, it is beneficial to reduce the obstruction of the vapor-deposited material by the fifth insulating layer 16, allowing more vapor-deposited material to pass through the opening formed by the fifth insulating layer 16. This increases the area of ​​the organic light-emitting layer 18 deposited on the substrate 10, making the coverage area of ​​the organic light-emitting layer 18 closer to the designed area pattern and improving the vapor deposition accuracy of the organic light-emitting layer 18.

[0122] Meanwhile, the thickness of the fifth insulating layer 16 is less than or equal to 100nm, which will not increase the thickness of the organic light-emitting display device too much, which is conducive to realizing the thin and light design of the organic light-emitting display device. In addition, the thinner fifth insulating layer 16 means that less material is used in the manufacturing process, which helps to reduce costs.

[0123] Furthermore, by setting the thickness of the fifth insulating layer 16 to be greater than or equal to 10 nm, the structural strength of the fifth insulating layer 16 can be ensured, thereby reducing the risk of edge damage or shape change of the fifth insulating layer 16. This helps to maintain the stability of the size and position of the shielding area formed by the fifth insulating layer 16, ensuring that the organic light-emitting layer 18 can be accurately deposited at the preset position, and improving the accuracy and reliability of the manufacturing process.

[0124] Continue to refer to Figure 3 and Figure 12 Optionally, the thickness of the fourth insulating layer 15 is 10nm~100nm.

[0125] By setting the thickness of the fourth insulating layer 15 to be greater than or equal to 10 nm, a sufficient height difference can be made between the bottom surface of the fifth insulating layer 16 and the top surface of the third insulating layer 14, thereby helping to at least partially disconnect the organic light-emitting layer 18 deposited on the upper surface of the fifth insulating layer 16 and the organic light-emitting layer 18 deposited on the upper surface of the third insulating layer 14, preventing crosstalk between adjacent pixels.

[0126] Meanwhile, setting the thickness of the fourth insulating layer 15 to be less than or equal to 100nm will not excessively increase the distance between the fifth insulating layer 16 and the substrate 10, which helps to reduce the shadow effect during the evaporation process, reduce the deviation between the actual evaporated organic light-emitting layer 18 pattern size and the design value, and improve the accuracy of the evaporation process.

[0127] Continue to refer to Figure 3 and Figure 12 Optionally, the edge of the third insulating layer 14 extends beyond the edge of the fourth insulating layer 15.

[0128] Among them, such as Figure 3 and Figure 12 As shown, the length of the third insulating layer 14 in the lateral direction can be greater than the length of the fourth insulating layer 15 in the lateral direction, or in other words, the projected area of ​​the third insulating layer 14 on the substrate 10 is greater than the projected area of ​​the fourth insulating layer 15 on the substrate 10.

[0129] With this configuration, when the first carrier adjustment layer 181 is fabricated, the first carrier adjustment layer 181 will be raised at the edge of the third insulating layer 14, which can extend the transmission path length of the current on the first carrier adjustment layer 181 and help reduce the leakage current between adjacent pixel regions 101.

[0130] Continue to refer to Figure 3 and Figure 12 Optionally, a second included angle θ2 is formed between the bottom surface of the third insulating layer 14 and the side surface of the third insulating layer 14, wherein the second included angle θ2 ranges from 20° to 60°.

[0131] Specifically, such as Figure 3 and Figure 12 As shown, the top surface of the fifth insulating layer 16 refers to the surface of the fifth insulating layer 16 away from the substrate 10, and the bottom surface of the fifth insulating layer 16 refers to the surface of the fifth insulating layer 16 close to the substrate 10.

[0132] In this embodiment, the second included angle θ2 between the bottom surface of the third insulating layer 14 and the side surface of the third insulating layer 14 is set to be less than or equal to 60°. At this time, a relatively smooth transition area is formed on the side surface of the third insulating layer 14, which makes it easier for the organic light-emitting layer 18 to adhere to the side surface of the third insulating layer 14 during deposition. This helps to reduce defects of the organic light-emitting layer 18 on the side surface of the third insulating layer 14, improve the uniformity of the organic light-emitting layer 18, and ensure that its thickness and performance are consistent throughout the entire pixel area 101.

[0133] Furthermore, the top surface width of the third insulating layer 14 is a pre-determined design value based on specific requirements. The smaller the second included angle θ2 between the bottom surface and the side surface of the third insulating layer 14, the larger the bottom surface width of the third insulating layer 14 will be, and the larger the overall width of the third insulating layer 14 will be. This makes the portion actually used for light emission within the pixel area 101 smaller, affecting the overall brightness and energy efficiency of the display device.

[0134] In this embodiment, the second included angle θ2 between the bottom surface of the third insulating layer 14 and the side surface of the third insulating layer 14 is set to be greater than or equal to 20°. This can prevent the second included angle θ2 from being too small, which would make the overall width of the third insulating layer 14 too large. This ensures that the overall width of the third insulating layer 14 is small, increases the area within the pixel region 101 that can effectively emit light, and improves the overall brightness and energy efficiency of the display device.

[0135] Figure 15 A partial cross-sectional structural diagram of another organic light-emitting display device provided in this embodiment of the present invention is shown below. Figure 15 As shown, optionally, the third insulating layer 14 includes a first insulating portion 141 located on the second insulating layer 13 and a second insulating portion 142 located on the first insulating portion 141. A third included angle θ3 is formed between the side surface of the first insulating portion 141 and the bottom surface of the third insulating layer 14, and a fourth included angle θ4 is formed between the side surface of the second insulating portion 142 and the bottom surface of the third insulating layer 14, wherein the fourth included angle θ4 is greater than the third included angle θ3.

[0136] Specifically, such as Figure 15 As shown, the third insulating layer 14 includes two stacked film layers, namely a first insulating portion 141 and a second insulating portion 142, with the first insulating portion 141 located between the second insulating layer 13 and the second insulating portion 142.

[0137] The top surface of the first insulating portion 141 refers to the surface of the first insulating portion 141 away from the substrate 10, and the bottom surface of the first insulating portion 141 refers to the surface of the first insulating portion 141 close to the substrate 10. The top surface of the second insulating portion 142 refers to the surface of the first insulating portion 141 away from the substrate 10, and the bottom surface of the second insulating portion 142 refers to the surface of the first insulating portion 141 close to the substrate 10.

[0138] In this embodiment, the third included angle θ3 between the side surface of the first insulating portion 141 and the bottom surface of the third insulating layer 14 is different from the fourth included angle θ4 between the side surface of the second insulating portion 142 and the bottom surface of the third insulating layer 14.

[0139] The included angle θ3 between the side surface of the first insulating portion 141 and the bottom surface of the third insulating layer 14 is relatively small, so as to form a smoother transition area on the side surface of the first insulating portion 141, making it easier for the organic light-emitting layer 18 to adhere to the side surface of the first insulating portion 141 during deposition, thereby being gently raised at the edge of the first insulating portion 141.

[0140] Meanwhile, the fourth included angle θ4 between the side surface of the second insulating portion 142 and the bottom surface of the third insulating layer 14 is relatively large, which can gradually increase the lifting range of the organic light-emitting layer 18. This can ensure the film quality of the organic light-emitting layer 18, while extending the transmission path length of the current on the first carrier adjustment layer 181 in the organic light-emitting layer 18, and reducing the leakage current between adjacent pixel regions 101.

[0141] Furthermore, at the edge of the second insulating portion 142, the larger fourth included angle θ4 can pre-thin or even cut off part of the film layer in the organic light-emitting layer 18, thereby reducing the continuity of the organic light-emitting layer 18 in this area, which helps to reduce the leakage current between adjacent pixel regions 101 and improve the electrical isolation effect between adjacent pixel regions.

[0142] It should be noted that the first insulating portion 141 and the second insulating portion 142 can be two parts of the same film layer. In this way, the preparation of the third insulating layer 14 can be completed in only one deposition process, which reduces the process steps and manufacturing process, thereby improving production efficiency and shortening the production cycle. At the same time, it is also beneficial to improve the material consistency and film uniformity of the first insulating portion 141 and the second insulating portion 142.

[0143] In this embodiment, the third included angle θ3 between the side surface of the first insulating portion 141 and the bottom surface of the third insulating layer 14 can be made different from the fourth included angle θ4 between the side surface of the second insulating portion 142 and the bottom surface of the third insulating layer 14 by setting the etching parameters. This embodiment does not make specific limitations in this regard.

[0144] In other embodiments, the first insulating portion 141 and the second insulating portion 142 may also be different film layers. In this way, the materials and etching parameters of the first insulating portion 141 and the second insulating portion 142 can be controlled independently, making the material selection and process parameter settings of the first insulating portion 141 and the second insulating portion 142 more flexible. This utility model embodiment does not make specific limitations in this regard.

[0145] Continue to refer to Figure 15 Optionally, the range of the third included angle θ3 is 20°~60°, and the range of the fourth included angle θ4 is 60°~90°.

[0146] Among them, such as Figure 15 As shown, the third included angle θ3 between the side surface of the first insulating portion 141 and the bottom surface of the third insulating layer 14 is set to be less than or equal to 60°, so as to form a smoother transition area on the side surface of the first insulating portion 141, making it easier for the organic light-emitting layer 18 to adhere to the side surface of the first insulating portion 141 during deposition, which helps to reduce defects of the organic light-emitting layer 18 on the side surface of the first insulating portion 141.

[0147] Meanwhile, the top surface width of the third insulating layer 14 is a pre-determined design value based on specific requirements. The third included angle θ3 between the side surface of the first insulating portion 141 and the bottom surface of the third insulating layer 14 is set to be greater than or equal to 20°. This can prevent the third included angle θ3 from being too small, which would make the overall width of the first insulating portion 141 too large. This ensures that the overall width of the third insulating layer 14 is small, increases the area within the pixel area 101 that can effectively emit light, and improves the overall brightness and energy efficiency of the display device.

[0148] Furthermore, the fourth included angle θ4 between the side surface of the second insulating portion 142 and the bottom surface of the third insulating layer 14 is set to be greater than or equal to 60°, so that the fourth included angle θ4 between the side surface of the second insulating portion 142 and the bottom surface of the third insulating layer 14 can be greater than the third included angle θ3 between the side surface of the first insulating portion 141 and the bottom surface of the third insulating layer 14, thereby gradually increasing the lifting range of the organic light-emitting layer 18. While ensuring the film quality of the organic light-emitting layer 18, the transmission path length of the current on the first carrier adjustment layer 181 in the organic light-emitting layer 18 is extended, and the leakage current between adjacent pixel regions 101 is reduced.

[0149] Meanwhile, at the edge of the second insulating portion 142, the larger fourth included angle θ4 can pre-thin or even cut off part of the film layer in the organic light-emitting layer 18, thereby reducing the continuity of the organic light-emitting layer 18 in this area, which helps to reduce the leakage current between adjacent pixel areas 101 and improve the electrical isolation effect between adjacent pixel areas.

[0150] Furthermore, the fourth included angle θ4 between the side surface of the second insulating portion 142 and the bottom surface of the third insulating layer 14 is set to be less than or equal to 90°, which makes it easier for the organic light-emitting layer 18 to adhere to the side surface of the second insulating portion 142 during deposition, which helps to reduce defects of the organic light-emitting layer 18 at the side surface of the second insulating portion 142; at the same time, it can also reduce the difficulty of the fabrication process of the second insulating portion 142 and make it easier to implement.

[0151] Continue to refer to Figure 15 Optionally, the thickness of the second insulating portion 142 is greater than or equal to 10 nm.

[0152] By setting the thickness of the second insulating portion 142 to be greater than or equal to 10 nm, the height of the organic light-emitting layer 18 can be effectively increased, which helps to extend the transmission path length of the current on the first carrier adjustment layer 181 in the organic light-emitting layer 18 and reduce the leakage current between adjacent pixel regions 101.

[0153] Continue to refer to Figure 3 Optionally, the top surface of the first insulating layer 12 is flush with the top surface of at least one anode 11.

[0154] Alternatively, the top surface of the first insulating layer 12 is higher than the top surface of the anode 11.

[0155] Alternatively, the top surface of the first insulating layer 12 may be lower than the top surface of the anode 11.

[0156] The top surface of the first insulating layer 12 refers to the surface of the first insulating layer 12 away from the substrate 10, and the top surface of the anode 11 refers to the surface of the anode 11 away from the substrate 10.

[0157] like Figure 3 As shown, the top surface of the first insulating layer 12 is flush with the top surface of at least one anode 11, that is, the top surface of the first insulating layer 12 and the top surface of at least one anode 11 are located on the same horizontal plane. At this time, the height of the top surface of the first insulating layer 12 is the same as the height of the top surface of the anode 11. In this way, the first insulating layer 12 can fill the pit formed between two different anodes 11, so that the subsequent film layer can be prepared on a relatively flat surface, thereby ensuring the continuity of the subsequent film layer.

[0158] Figure 16 A partial cross-sectional structural diagram of another organic light-emitting display device provided in this embodiment of the present invention is shown below. Figure 16 As shown, optionally, the top surface of the first insulating layer 12 is higher than the top surface of the anode 11, that is, the difference between the height of the top surface of the first insulating layer 12 and the height of the top surface of the anode 11 is a positive value. With this setting, when the first carrier adjustment layer 181 is prepared, the first carrier adjustment layer 181 will be raised sequentially by the first insulating layer 12, the second insulating layer 13 and the third insulating layer 14, thereby increasing the distance between the cathode 19 and the anode 11, avoiding the formation of high brightness at the pixel edge, and at the same time extending the transmission path length of the current on the first carrier adjustment layer 181, which is beneficial to reduce the leakage current between adjacent pixel regions 101.

[0159] Figure 17 A partial cross-sectional structural diagram of another organic light-emitting display device provided in this embodiment of the present invention is shown below. Figure 17 As shown, optionally, when the spacing between adjacent anodes 11 is large, the top surface of the first insulating layer 12 can be set to be lower than the top surface of the anode 11, that is, the difference between the height of the top surface of the first insulating layer 12 and the height of the top surface of the anode 11 is negative. This can reduce the amount of material used and help reduce manufacturing costs.

[0160] Continue to refer to Figure 3 , Figure 16 and Figure 17Optionally, the anode 11 includes a reflective anode layer 111 and a transparent anode layer 112 stacked together, with the transparent anode layer 112 located above the reflective anode layer 111. The top surface of the first insulating layer 12 is flush with the top surface of the reflective anode layer 111. Alternatively, the top surface of the first insulating layer 12 is higher than the top surface of the reflective anode layer 111.

[0161] Specifically, such as Figure 3 , Figure 16 and Figure 17 As shown, the reflective anode layer 111 is disposed within the pixel region 101. The reflective anode layer 111 can be made of a highly conductive metal material (such as silver, copper, etc.), thereby reducing the resistance of the anode 11 and improving the current transmission efficiency.

[0162] Furthermore, the thickness of the reflective electrode 14 in each pixel region 101 can be the same, thereby simplifying the manufacturing process and improving production efficiency.

[0163] Continue to refer to Figure 3 , Figure 16 and Figure 17 A transparent anode layer 112 is also provided on the reflective anode layer 111 of the pixel area 101. The transparent anode layer 112 is used to form a microcavity effect. By providing transparent anode layers 112 of different thicknesses in the pixel areas 101 that display different colors, the length of the microcavity can be adjusted to enhance the light of the displayed color, improve the luminous efficiency of the corresponding color light, and help improve the color purity.

[0164] Figure 18 A schematic flowchart illustrating a method for manufacturing another organic light-emitting display device according to an embodiment of this utility model is shown below. Figure 17 and Figure 18 As shown, optionally, the top surface of the first insulating layer 12 is flush with the top surface of the reflective anode layer 111, that is, the top surface of the first insulating layer 12 and the top surface of the reflective anode layer 111 are located on the same horizontal plane. In this case, the height of the top surface of the first insulating layer 12 is the same as the height of the top surface of the reflective anode layer 111. Here, the top surface of the first insulating layer 12 refers to the surface of the first insulating layer 12 away from the substrate 10, and the top surface of the reflective anode layer 111 refers to the surface of the reflective anode layer 111 away from the substrate 10.

[0165] With this setup, when fabricating organic light-emitting display devices, such as Figure 18 As shown in (a), a full layer of first insulating material 120 can be deposited on the reflective anode layer 111. As Figure 18As shown in (b), the first insulating material layer 120 can be etched by chemical mechanical polishing (CMP) to remove the first insulating material layer 120 on the reflective anode layer 111, while retaining the first insulating material layers 120 of the two adjacent reflective anode layers 111 to form the first insulating layer 12. This process not only makes the top surface of the first insulating layer 12 flush with the top surface of the reflective anode layer 111, but also makes the top surface of the first insulating layer 12 and the top surface of the reflective anode layer 111 form a flat and smooth surface, so that the subsequent film layer can be prepared on a relatively flat surface, thereby ensuring the film quality of the subsequent film layer.

[0166] It should be noted that the main working principle of chemical mechanical polishing is that, under certain pressure and in the presence of polishing slurry, the polished film layer moves relative to the polishing pad. Through the highly organic combination of the mechanical polishing action of nano-abrasives and the chemical action of various chemical reagents, the thickness of the polished film layer is reduced, and the surface of the polished film layer can achieve the requirements of high flatness, low surface roughness and low defects. The formation of the first insulating layer 12 using this process does not require the additional setting of a mask, thereby reducing manufacturing costs, simplifying the process flow and improving production efficiency.

[0167] Continue to refer to Figure 3 and Figure 16 Optionally, the top surface of the first insulating layer 12 is higher than the top surface of the reflective anode layer 111, that is, the difference between the height of the top surface of the first insulating layer 12 and the height of the top surface of the reflective anode layer 111 is a positive value. This setting helps to reduce the height difference between the area where the anode 11 is located and the area between adjacent anodes 11, so that the subsequent film layer can be prepared on a relatively flat surface, thereby improving the film formation quality of the subsequent film layer.

[0168] Figure 19 A partial cross-sectional structural diagram of another organic light-emitting display device provided in this embodiment of the present invention is shown below. Figure 19 As shown, optionally, the anode 11 includes a reflective anode layer 111 and a transparent anode layer 112 stacked together, with the transparent anode layer 112 located above the reflective anode layer 111. The anode 11 includes a first anode 11A, a second anode 11B, and a third anode 11C. The organic light-emitting layer 18 within the pixel region 101 where the first anode 11A, second anode 11B, and third anode 11C are located emits different colors. The thickness of the transparent anode layer 112 in the first anode 11A is less than the thickness of the transparent anode layer 112 in the second anode 11B, and the thickness of the transparent anode layer 112 in the second anode 11B is less than the thickness of the transparent anode layer 112 in the third anode 11C. The top surface of the first insulating layer 12 is flush with the top surface of the first anode 11A.

[0169] The arrangement of the reflective anode layer 111 and the transparent anode layer 112 can refer to any of the above embodiments, and will not be repeated here.

[0170] In this embodiment, the anode 11 includes a first anode 11A, a second anode 11B, and a third anode 11C located in different pixel regions 101.

[0171] like Figure 19 As shown, optionally, pixel region 101 may include red pixel region 101R, green pixel region 101G, and blue pixel region 101B. It can be understood that the light emission color of red pixel region 101R is red, the light emission color of green pixel region 101G is green, and the light emission color of blue pixel region 101B is blue. Then, the first anode 11A, the second anode 11B, and the third anode 11C can be anodes 11 located in blue pixel region 101B, green pixel region 101G, and red pixel region 101R, respectively.

[0172] The longer the cavity length of the microcavity formed by the transparent anode layer 112, the larger the wavelength of the output light.

[0173] In this embodiment, as Figure 19 As shown, taking the first anode 11A located in the blue pixel region 101B, the second anode 11B located in the green pixel region 101G, and the third anode 11C located in the red pixel region 101R as an example, the transparent anode layer 112 in the first anode 11A can be set to have a smaller thickness, so that the cavity length of the microcavity is shorter, thereby enhancing the output efficiency of blue light and improving the display color purity of blue light; the transparent anode layer 112 in the second anode 11B can have a moderate thickness, so that the cavity length of the microcavity is moderate, thereby enhancing the output efficiency of green light and improving the display color purity of green light; the transparent anode layer 112 in the third anode 11C can have a larger thickness, so that the cavity length of the microcavity is longer, thereby enhancing the output efficiency of red light and improving the display color purity of red light.

[0174] Furthermore, such as Figure 19 As shown, the top surface of the first insulating layer 12 is flush with the top surface of the first anode 11A, that is, the top surface of the first insulating layer 12 is flush with the top surface of the anode 11 with the smallest top surface height. On the one hand, this reduces the height difference between the area where the anode 11 is located and the area between adjacent anodes 11, so that subsequent film layers can be prepared on a relatively flat surface, thereby improving the film quality of subsequent film layers. On the other hand, during the etching process of the first insulating material layer to form the first insulating layer 12, the anodes 11 of all pixel areas 101 can be exposed by the first insulating layer 12 in one etching process, without the need for additional etching steps of the first insulating material layer through masking process, thereby simplifying the manufacturing process and improving production efficiency.

[0175] Figure 20 This is a partial cross-sectional structural diagram of another organic light-emitting display device provided in an embodiment of the present invention. Figure 21 A partial cross-sectional structural diagram of another organic light-emitting display device provided in this embodiment of the present invention is shown below. Figure 20 and Figure 21 As shown, optionally, in the case where the top surface of the first insulating layer 12 is higher than the top surface of the anode 11 (e.g.) Figure 20 (as shown), or, in the case where the top surface of the first insulating layer 12 is lower than the top surface of the anode 11 (as shown). Figure 21 As shown, transparent anode layers 112 of different thicknesses can also be set in pixel areas 101 that display different colors, thereby enhancing the light of the displayed color by adjusting the length of the microcavity and improving the color purity. This embodiment of the present invention does not specifically limit this.

[0176] Continue to refer to Figure 3 Optionally, the distance L0 from the edge of the top surface of the third insulating layer 14 to the edge of the top surface of the anode 11 is greater than or equal to 0.

[0177] The top surface of the third insulating layer 14 refers to the surface of the third insulating layer 14 away from the substrate 10, and the top surface of the anode 11 refers to the surface of the anode 11 away from the substrate 10.

[0178] like Figure 3 As shown, on the side of the fifth insulating layer 16 near the anode 11, the first carrier adjustment layer 181 has not yet been cut off by the fifth insulating layer 16. Therefore, the leakage current transmitted on the first carrier adjustment layer 181 will flow to the cathode 19 through the light-emitting material layer 182 located above the third insulating layer 14, causing stray light to form at the corner of the pixel.

[0179] In this embodiment, as Figure 3 As shown, in a direction parallel to the plane of the substrate 10, by setting the distance L0 from the edge of the top surface of the third insulating layer 14 to the edge of the top surface of the anode 11 to be greater than or equal to 0, the stray light formed by the organic light-emitting layer 18 above the third insulating layer 14 can be located in the gap region between two adjacent anodes 11. This region is farther away from the reflective anode layer 111, thereby reducing the reflection of the stray light and helping to weaken the output intensity of the stray light, thereby reducing the impact of the stray light on the display effect.

[0180] Meanwhile, the distance L0 from the edge of the top surface of the third insulating layer 14 to the edge of the top surface of the anode 11 is greater than or equal to 0, which can reduce the influence of the third insulating layer 14 on the microcavity length, thereby helping to improve the purity of the displayed color.

[0181] Optionally, the organic light-emitting display device is a silicon-based micro-OLED display.

[0182] Among them, the silicon-based micro organic light-emitting display device combines silicon-based integrated circuit (CMOS) technology and organic light-emitting diode (OLED) technology to directly integrate OLED pixel arrays onto silicon wafers to form micro displays.

[0183] Silicon-based micro organic light-emitting display devices are characterized by their small size, thinness, low power consumption, high brightness, fast response speed, and wide viewing angle. They are suitable for use in near-eye display devices, such as virtual reality (VR), augmented reality (AR) headsets, head-up display (HUD) systems, micro projectors, and other portable electronic products with stringent requirements for size, weight, and energy consumption.

[0184] In this embodiment of the present invention, the substrate 10 can be a silicon-based driving backplane. Corresponding organic light-emitting layers 18 can be formed on each pixel region 101 of the substrate 10 by etching process (e.g., photolithography process including exposure and development steps). The process error can be controlled within ±2μm. Compared with the use of traditional fine metal mask (FMM) to form organic light-emitting layers 18, smaller pixel size and higher resolution can be achieved, and the manufacturing cost is lower.

[0185] Based on the same inventive concept, this utility model embodiment also provides a method for manufacturing an organic light-emitting display device, used to prepare any of the organic light-emitting display devices provided in the above embodiments. The explanations of the same or corresponding structures and terms as in the above embodiments will not be repeated here.

[0186] Figure 22 This is a schematic flowchart illustrating a method for manufacturing an organic light-emitting display device according to an embodiment of the present invention. Figures 23-33 A schematic flowchart illustrating another method for manufacturing an organic light-emitting display device according to an embodiment of this utility model is shown below. Figures 22-33 As shown, the manufacturing method includes:

[0187] S101. A substrate is provided, the substrate including a plurality of pixel regions spaced apart.

[0188] Specifically, such as Figure 23 As shown, the substrate 10 can be a driving substrate, and multiple pixel regions 101 arranged in an array are defined on the substrate 10. In the row or column direction, adjacent pixel regions are pixels that emit different colors of light.

[0189] For example, such as Figure 23As shown, in the row direction, pixel region 101 can be divided into red pixel region 101R, green pixel region 101G and blue pixel region 101B, but it is not limited to this. In some embodiments, pixel region 101 can also be supplemented with white or other colored pixel regions.

[0190] Continue to refer to Figure 4 Optionally, the substrate 10 includes a substrate 31, on which a driving transistor T corresponding to the pixel region 101 is disposed. The driving transistor T is connected to the anode 11, and the driving transistor T can provide the pixel with a working signal corresponding to the light emission brightness through the anode 11 to drive the pixel to emit light.

[0191] The driving transistor T may include an active region T1, a gate T2 and a source / drain electrode layer T3 stacked together. The active region T1 may be formed in the substrate 31, but is not limited thereto.

[0192] S102, Form an anode within the pixel area.

[0193] Specifically, such as Figure 24 As shown, an anode 11 is formed in the pixel region 101 on the substrate 10. The anodes 11 corresponding to each pixel region 101 are electrically isolated from each other. The anode 11 serves as an electrode of the pixel and can inject carriers (such as holes) into the pixel under the drive of a positive voltage from an external power supply.

[0194] Optional, such as Figure 24 As shown, the anode 11 includes a reflective anode layer 111 and a transparent anode layer 112 stacked together. The transparent anode layer 112 is located on top of the reflective anode layer 111. By setting transparent anode layers 112 of different thicknesses in the pixel areas 101 that display different colors, the length of the microcavity can be adjusted to enhance the light of the displayed color, improve the luminous efficiency of the corresponding color light, and improve the color purity, but it is not limited to this.

[0195] S103. A first insulating material layer is formed on the upper layer of the anode.

[0196] Specifically, such as Figure 25 As shown, a first insulating material layer 120 is deposited on the anode 11.

[0197] The material of the first insulating layer 120 may include at least one of silicon oxide (SiO) and silicon nitride (SiN). Both silicon oxide and silicon nitride have high resistivity and can play a good insulating role between adjacent anodes 11. At the same time, silicon oxide and silicon nitride also have strong chemical stability and excellent high temperature stability, and are not easily corroded by moisture, oxygen and other harmful gases in the environment. They can maintain good insulation performance in high temperature environments, which is conducive to extending the service life of the device.

[0198] S104. Etch the first insulating material layer to form a first insulating layer, the first insulating layer being located between adjacent pixel regions.

[0199] Specifically, such as Figure 26 As shown, the first insulating material layer 120 can be etched by photolithography or chemical mechanical polishing (CMP) to remove the first insulating material layer 120 on the reflective anode layer 111, while retaining the first insulating material layer 120 of the two adjacent reflective anode layers 111, so as to form a first insulating layer 12 between the two adjacent pixel regions 101. The first insulating layer 12 helps to ensure electrical insulation between the two adjacent anodes 11. At the same time, since the anode 11 has a certain thickness, a pit is formed between the two anodes 11. Filling the pit between the two adjacent anodes 11 with the first insulating layer 12 also helps to reduce the height difference between the anode 11 region and the pit region, so that the subsequent film layer can be prepared on a relatively flat surface, thereby ensuring the continuity of the subsequent film layer.

[0200] S105. A second insulating material layer is formed on top of the first insulating layer.

[0201] Specifically, such as Figure 27 As shown, a second insulating material layer 130 is deposited on the first insulating layer 12.

[0202] S106. A third insulating material layer is formed on the second insulating material layer, wherein the materials of the second insulating material layer and the third insulating material layer are different.

[0203] Specifically, such as Figure 28 As shown, a third insulating material layer 140 is deposited on top of the second insulating material layer 130.

[0204] Optionally, the material of the third insulating layer 140 includes at least one of silicon nitride (SiN), silicon oxide (SiO), silicon oxynitride (SiON), and amorphous silicon (a-Si).

[0205] Among them, silicon nitride (SiN), silicon oxide (SiO), and silicon oxynitride (SiON) have high resistivity, which can provide good insulation for the first carrier adjustment layer 181 located on the upper surface of the third insulating layer 14. Simultaneously, silicon nitride (SiN), silicon oxide (SiO), and silicon oxynitride (SiON) also have good chemical and thermal stability, maintaining good insulation performance at high temperatures, which is beneficial for extending the device's lifespan. Amorphous silicon (a-Si) can be deposited through various deposition methods (such as plasma-enhanced chemical vapor deposition, PECVD), exhibiting good process compatibility and good mechanical stability, providing good structural support and ensuring the stability of the structure in subsequent processing steps.

[0206] S107. A fourth insulating material layer is formed on the third insulating material layer.

[0207] Specifically, such as Figure 29 As shown, a fourth insulating layer 150 is deposited on top of the third insulating layer 140.

[0208] Optionally, the material of the fourth insulating layer 150 includes at least one of silicon nitride (SiN), silicon oxide (SiO), silicon oxynitride (SiON), and amorphous silicon (a-Si), but is not limited thereto.

[0209] S108. A fifth insulating material layer is formed on the fourth insulating material layer.

[0210] Specifically, such as Figure 30 As shown, a fifth insulating layer 160 is deposited on top of the fourth insulating layer 150.

[0211] Optionally, the material of the fifth insulating layer 160 includes at least one of silicon nitride (SiN), silicon oxide (SiO), silicon oxynitride (SiON), and amorphous silicon (a-Si), but is not limited thereto.

[0212] S109. Etch the third insulating material layer, the fourth insulating material layer and the fifth insulating material layer to form the third insulating layer, the fourth insulating layer and the fifth insulating layer.

[0213] Specifically, such as Figure 31As shown, the third insulating material layer 140, the fourth insulating material layer 150, and the fifth insulating material layer 160 can be etched using photolithography or dry etching to form the third insulating layer 14, the fourth insulating layer 15, and the fifth insulating layer 16 located between adjacent pixel regions 101. The third insulating layer 14, the fourth insulating layer 15, and the fifth insulating layer 16 are all disposed around the pixel region 101. The defined region can be any shape such as rectangle, polygon, or circle. This embodiment of the present invention does not make specific limitations in this regard.

[0214] In particular, by etching the third insulating material layer 140, the fourth insulating material layer 150 and the fifth insulating material layer 160 in the same etching process to form the third insulating layer 14, the fourth insulating layer 15 and the fifth insulating layer 16, the process cycle can be shortened and the manufacturing cost reduced.

[0215] Furthermore, since the materials of the second insulating material layer 130 and the third insulating material layer 140 are different, during the etching process of the third insulating material layer 140, the fourth insulating material layer 150 and the fifth insulating material layer 160, the second insulating material layer 130, due to its different material, can protect the underlying first insulating layer 12, preventing the first insulating layer 12 from etching damage. This, in turn, improves the quality and smoothness of the subsequent film layer (e.g., organic light-emitting layer) deposited on the first insulating layer 12, and improves the luminous efficiency and uniformity.

[0216] S110. Etch the sidewalls of the fourth insulating layer so that the edge of the fifth insulating layer extends beyond the edge of the fourth insulating layer.

[0217] Specifically, such as Figure 32 As shown, the sidewall of the fourth insulating layer 15 is etched. A suitable etching gas or liquid can be selected for the fourth insulating layer 15 so that the etching rate of the fourth insulating layer 15 is much greater than the etching rate of the third insulating layer 14 and the fifth insulating layer 16. This results in the sidewall of the fourth insulating layer 15 being etched preferentially, causing the sidewall of the fourth insulating layer 15 to be recessed inward. This allows the edge of the fifth insulating layer 16 to extend beyond the edge of the fourth insulating layer 15. At this time, the edge portion of the fifth insulating layer 16 forms an eaves structure above the edge of the fourth insulating layer 15.

[0218] S111, Etch the second insulating material layer 130 to form the second insulating layer 13.

[0219] Specifically, such as Figure 33As shown, the second insulating material layer 130 can be etched by photolithography or dry etching to form a second insulating layer 13 located between adjacent pixel regions 101. The second insulating layer 13 surrounds the pixel region 101, and the defined region can be any shape such as rectangle, polygon or circle. This embodiment of the present invention does not make any specific limitation in this regard.

[0220] The method for manufacturing an organic light-emitting display device provided in this embodiment of the invention involves setting a second insulating material layer between a first insulating layer and a third insulating layer. The material of the second insulating material layer is different from the materials of the third, fourth, and fifth insulating material layers above it. During the etching process of the third, fourth, and fifth insulating material layers to form the third, fourth, and fifth insulating layers, the second insulating material layer blocks the etching, thus protecting the first insulating layer from etching damage. This improves the quality and smoothness of subsequent film layers (such as organic light-emitting layers) deposited on the first insulating layer, and enhances luminous efficiency and uniformity.

[0221] Optionally, etching the second insulating material layer includes:

[0222] The second insulating material layer is etched using the third insulating layer as a mask.

[0223] Specifically, such as Figure 10 As shown, during the etching process of the second insulating material layer 130 to form the second insulating layer 13, the third insulating layer 14 can be directly used as a mask to etch the second insulating material layer 130, eliminating the need for an additional mask. This reduces manufacturing costs, simplifies the process, and improves production efficiency. Furthermore, using the third insulating layer 14 as a mask provides higher etching precision, ensuring that the edges of the second insulating layer 13 are aligned with the edges of the third insulating layer 14, thereby reducing problems such as interlayer misalignment caused by process errors resulting from additional masking steps.

[0224] Optionally, the material of the second insulating layer is different from that of the first insulating layer.

[0225] Specifically, such as Figure 8 As shown in (d), after forming the third insulating layer 14, the fourth insulating layer 15, and the fifth insulating layer 16, the second insulating material layer 130 is etched to remove the second insulating material layer 130 above the anode 11, forming the second insulating layer 13. Since the material of the second insulating material layer 130 is different from the material of the first insulating layer 12, an etchant with high selectivity for the material of the second insulating material layer 130 can be selected during the etching process, thereby reducing damage to the first insulating layer 12 during the etching of the second insulating layer 130.

[0226] Optionally, the thickness of the second insulating material layer is 5nm to 50nm.

[0227] Among them, such as Figure 8 As shown, the thickness of the second insulating material layer 130 is greater than or equal to 5 nm. At this time, the second insulating material layer 130 has sufficient thickness, so that during the etching of the third insulating material layer 140, the fourth insulating material layer 150 and the fifth insulating material layer 160, it can be ensured that the second insulating material layer 130 will not be completely removed during the etching process, thereby providing sufficient protection for the first insulating layer 12.

[0228] Furthermore, the thickness of the second insulating material layer 130 is less than or equal to 50 nm. In this case, the thickness of the second insulating material layer 130 will not be too thick. Therefore, during the process of etching the second insulating material layer 130 to form the second insulating layer 13, the etching will not be difficult or the process complexity will not be increased due to the second insulating material layer 130 being too thick.

[0229] Optionally, the material of the second insulating layer includes at least one of aluminum oxide (Al2O3), titanium oxide (TiO2), zirconium oxide (ZrO2), or hafnium oxide (HfO2).

[0230] The second insulating material layer 130 is made of a different material than the third insulating layer 14 and the first insulating layer 12 in order to achieve etching selectivity.

[0231] like Figure 8 As shown, during the etching of the third insulating material layer 140, the fourth insulating material layer 150, and the fifth insulating material layer 160, an etchant with high selectivity for the materials of the third insulating material layer 140, the fourth insulating material layer 150, and the fifth insulating material layer 160 can be selected. During the etching process, the second insulating material layer 130 can protect the first insulating layer 12 below it, reduce damage to the first insulating layer 12, and thus protect the integrity of the structure of the first insulating layer 12.

[0232] Meanwhile, aluminum oxide (Al2O3), titanium oxide (TiO2), zirconium oxide (ZrO2) and hafnium oxide (HfO2) have good chemical stability and mechanical strength, which helps to resist the corrosion of the external environment and extend the service life of the device.

[0233] It should be understood that the various forms of the process shown above can be used, with steps reordered, added, or deleted. For example, the steps described in this utility model can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution of this utility model can be achieved, and this is not limited herein.

[0234] The specific embodiments described above do not constitute a limitation on the scope of protection of this utility model. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this utility model should be included within the scope of protection of this utility model.

Claims

1. An organic light-emitting display device, characterized in that, include: A substrate, the substrate comprising a plurality of pixel regions spaced apart; An anode is disposed within the pixel region; A first insulating layer filling the spaces between the pixel regions; A second insulating layer disposed on the first insulating layer; A third insulating layer is disposed on the second insulating layer, wherein the material of the second insulating layer is different from the material of the third insulating layer; A fourth insulating layer disposed on the third insulating layer; A fifth insulating layer is disposed on the fourth insulating layer, the edge of the fifth insulating layer extending beyond the edge of the fourth insulating layer.

2. The organic light-emitting display device according to claim 1, characterized in that, The material of the second insulating layer is different from that of the first insulating layer.

3. The organic light-emitting display device according to claim 1, characterized in that, The thickness of the second insulating layer is 5nm~50nm.

4. The organic light-emitting display device according to claim 1, characterized in that, The material of the second insulating layer includes at least one of aluminum oxide, titanium oxide, zirconium oxide, or hafnium oxide.

5. The organic light-emitting display device according to claim 1, characterized in that, The vertical projection of the second insulating layer on the substrate overlaps the vertical projection of the third insulating layer on the substrate.

6. The organic light-emitting display device according to claim 5, characterized in that, The vertical projection of the second insulating layer on the substrate and the vertical projection of the third insulating layer on the substrate coincide.

7. The organic light-emitting display device according to claim 1, characterized in that, The pixel region also includes an organic light-emitting layer disposed above the anode. The organic light-emitting layer includes an organic light-emitting layer that emits multiple colors of light. In the row or column direction, the organic light-emitting layers in adjacent pixel regions emit different colors.

8. The organic light-emitting display device according to claim 1, characterized in that, There is a first included angle between the bottom surface of the fifth insulating layer and the side surface of the fifth insulating layer, and the first included angle is in the range of 20° to 60°.

9. The organic light-emitting display device according to claim 1, characterized in that, The thickness of the fifth insulating layer is 10nm~100nm.

10. The organic light-emitting display device according to claim 1, characterized in that, The thickness of the fourth insulating layer is 10nm~100nm.

11. The organic light-emitting display device according to claim 1, characterized in that, The edge of the third insulating layer extends beyond the edge of the fourth insulating layer.

12. The organic light-emitting display device according to claim 1, characterized in that, There is a second included angle between the bottom surface of the third insulating layer and the side surface of the third insulating layer, and the second included angle ranges from 20° to 60°.

13. The organic light-emitting display device according to claim 1, characterized in that, The third insulating layer includes a first insulating portion located on the second insulating layer and a second insulating portion located on the first insulating portion; There is a third included angle between the side surface of the first insulating portion and the bottom surface of the third insulating layer; There is a fourth included angle between the side surface of the second insulating portion and the bottom surface of the third insulating layer; The fourth included angle is greater than the third included angle.

14. The organic light-emitting display device according to claim 13, characterized in that, The range of the third included angle is 20° to 60°; The range of the fourth included angle is 60° to 90°.

15. The organic light-emitting display device according to claim 13, characterized in that, The thickness of the second insulating portion is greater than or equal to 10 nm.

16. The organic light-emitting display device according to claim 1, characterized in that, The material of the fifth insulating layer includes at least one of silicon nitride, silicon oxide, silicon oxynitride, or amorphous silicon. And / or, The material of the fourth insulating layer includes at least one of silicon nitride, silicon oxide, silicon oxynitride, or amorphous silicon. And / or, The material of the third insulating layer includes at least one of silicon nitride, silicon oxide, silicon oxynitride, or amorphous silicon.

17. The organic light-emitting display device according to claim 1, characterized in that, The distance from the edge of the top surface of the third insulating layer to the edge of the top surface of the anode is greater than or equal to 0.

18. The organic light-emitting display device according to claim 1, characterized in that, The top surface of the first insulating layer is flush with the top surface of at least one of the anodes; or, The top surface of the first insulating layer is higher than the top surface of the anode; or, The top surface of the first insulating layer is lower than the top surface of the anode.

19. The organic light-emitting display device according to claim 7, characterized in that, The anode includes a reflective anode layer and a transparent anode layer stacked together, with the transparent anode layer located above the reflective anode layer; The top surface of the first insulating layer is flush with the top surface of the reflective anode layer; or, The top surface of the first insulating layer is higher than the top surface of the reflective anode layer.

20. The organic light-emitting display device according to claim 7, characterized in that, The anode includes a reflective anode layer and a transparent anode layer stacked together, with the transparent anode layer located above the reflective anode layer; The anode includes a first anode, a second anode, and a third anode; The organic light-emitting layer within the pixel region containing the first anode, the second anode, and the third anode emits different colors. The thickness of the transparent anode layer in the first anode is less than the thickness of the transparent anode layer in the second anode, and the thickness of the transparent anode layer in the second anode is less than the thickness of the transparent anode layer in the third anode; The top surface of the first insulating layer is flush with the top surface of the first anode.

21. The organic light-emitting display device according to claim 1, characterized in that, The organic light-emitting display device is a silicon-based micro organic light-emitting display device.

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