A multifunctional cleaning and heating platform for semiconductors

Abstract

The utility model discloses a multifunctional cleaning heating platform for semiconductor, including box, the box top fixed mounting has remote plasma source and gas shower head, and the output of remote plasma source is fixedly linked with gas shower head, and the input of remote plasma source is fixedly linked with first air inlet pipe, and the one side of gas shower head is fixedly linked with second air inlet pipe, the heating disc is vertically movably installed to the box bottom, the box bottom side is fixedly linked with the exhaust pipe, and the exhaust pipe is successively installed with wet scrubber, dry adsorber, catalytic converter and air pump along the airflow direction. In the utility model, the exhaust gas is successively through wet scrubber and is neutralized with lye to acid gas, dry adsorber adsorbs the residual toxic gas, catalytic converter converts the harmful gas into harmless component under the action of catalyst, and air pump provides power, makes the box keep negative pressure state, prevents gas leakage.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor processing technology, and in particular to a multifunctional cleaning heating platform for semiconductors. Background Technology

[0002] With rapid economic development, the demand for electronic products is increasing, driving the rapid development of the semiconductor industry. As a key material in semiconductor manufacturing, wafers undergo various processes during production, many of which require heat treatment. For example, in plasma cleaning, the uniformity of heating on the wafer directly affects the activity of surface oxides and organic matter, thus impacting the cleaning effect.

[0003] The existing Chinese utility model patent CN220456365U, entitled "A Surface Cleaning Device for Wafers," discloses that "the surface cleaning device further includes: a pump connected to the lower part of the cavity for extracting the used process gas from the cavity. The process gas includes a nitrogen-containing hydrogen substance, a fluorine-containing substance, and a carrier gas; the first inlet introduces the nitrogen-containing hydrogen substance, which is any one of NH3 and N2H4; the second inlet introduces the fluorine-containing substance, which is any one of HF, CF4, CHF3, CH2F2, CH3F, NF3, and SF6; the carrier gas is any one of Ar, He, and Xe." Although these gases play an important role in the wafer surface cleaning process, most of them are reactive or toxic, especially the fluorine-containing substances. Directly emitting these waste gases not only pollutes the environment but also threatens human health. Utility Model Content

[0004] The purpose of this utility model is to provide a multifunctional cleaning and heating platform for semiconductors in order to solve the technical problems mentioned in the background art.

[0005] To achieve the above objectives, the present invention adopts the following technical solution: A multifunctional cleaning and heating platform for semiconductors includes a housing. A remote plasma source and a gas spray head are fixedly installed on the top of the housing. The output end of the remote plasma source is fixedly connected to the gas spray head, and the input end of the remote plasma source is fixedly connected to a first air inlet pipe. A second air inlet pipe is fixedly connected to one side of the gas spray head. Heating jackets are fixedly fitted on both sets of air inlet pipes. A heating plate for placing wafers is movably installed vertically at the bottom of the housing. An exhaust pipe is fixedly connected to the bottom side of the housing. A wet scrubber, a dry adsorber, a catalytic converter, and a vacuum pump are sequentially installed on the exhaust pipe along the airflow direction.

[0006] As a further description of the above technical solution: Guide rods passing through the heating plate are fixedly connected to both sides of the box, and a first electric telescopic rod for driving the heating plate to rise and fall is fixedly installed at the bottom of the box.

[0007] As a further description of the above technical solution: The free end of the first electric telescopic rod is fixedly connected to a first lifting plate that is movably sleeved on the guide rod, and the heating plate and the first lifting plate are fixedly connected by a guide sleeve that is movably sleeved on the guide rod.

[0008] As a further description of the above technical solution: A second electric telescopic rod is fixedly installed on the first lifting plate, and the free end of the second electric telescopic rod is fixedly connected to the second lifting plate. A top rod passing through the heating plate is fixedly connected to the top of the second lifting plate.

[0009] As a further description of the above technical solution: The top rod is a rubber column.

[0010] As a further description of the above technical solution: The gas spray head and the housing are fixedly connected by fixing rods arranged around its top.

[0011] In summary, due to the adoption of the above technical solution, the beneficial effects of this utility model are: 1. In this utility model, the discharged exhaust gas passes sequentially through a wet scrubber to neutralize the acidic gas with alkaline solution, a dry adsorber to adsorb the residual toxic gas, and a catalytic converter to convert the harmful gas into harmless components under the action of a catalyst. The exhaust pump provides power to keep the box under negative pressure and prevent gas leakage.

[0012] 2. In this utility model, the first electric telescopic rod drives the first lifting plate to lift the guide sleeve, heating plate and wafer together, which facilitates temperature control and flow field control to remove the oxide layer on the wafer surface. The second electric telescopic rod drives the second lifting plate to lift the top rod to lift the wafer away from the heating plate. The distance between the wafer and the heating plate is controlled to control the temperature of the wafer, so that the reaction gas reacts with the natural oxide layer on the wafer surface to generate intermediate by-products. Attached Figure Description

[0013] Figure 1 A three-dimensional structural schematic diagram of a multifunctional cleaning heating platform for semiconductors provided according to an embodiment of the present invention is shown; Figure 2 A schematic diagram of the internal structure of the box provided according to an embodiment of the present invention is shown; Figure 3 A schematic diagram of the connection structure of two sets of lifting plates according to an embodiment of the present utility model is shown.

[0014] Legend: 1. Housing; 2. First air inlet pipe; 3. Heating jacket; 4. Wet scrubber; 5. Dry adsorber; 6. Catalytic converter; 7. Exhaust pipe; 8. Air pump; 9. Second air inlet pipe; 10. Remote plasma source; 11. Gas spray head; 12. Fixing rod; 13. Guide rod; 14. Guide sleeve; 15. Wafer; 16. Heating plate; 17. First lifting plate; 18. First electric telescopic rod; 19. Second electric telescopic rod; 20. Top rod; 21. Second lifting plate. Detailed Implementation

[0015] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of the present utility model.

[0016] Please see Figure 1-3This utility model provides a technical solution: a multifunctional cleaning and heating platform for semiconductors, including a housing 1. A remote plasma source 10 and a gas spray head 11 are fixedly installed on the top of the housing 1. The gas spray head 11 and the housing 1 are fixedly connected by fixing rods 12 arranged around its top. The remote plasma source 10 ionizes the input process gas (such as Ar, He, etc., carrier gas) into a plasma state, and then introduces it into the housing 1 through the gas spray head 11. High-energy electrons and active free radicals react with the oxide layer and organic contaminants on the surface of the wafer 15, decomposing them into volatile organic compounds. The material is emitted and discharged with the gas; the output end of the remote plasma source 10 is fixedly connected to the gas spray head 11, and the input end of the remote plasma source 10 is fixedly connected to the first air inlet pipe 2. A second air inlet pipe 9 is fixedly connected to one side of the gas spray head 11. The first air inlet pipe 2 inputs nitrogen- and hydrogen-containing gases (such as NH3 or N2H4), and the second air inlet pipe 9 inputs fluorine-containing gases (such as HF, CF4, etc.). After being mixed in the gas spray head 11, the mixture is evenly sprayed onto the surface of the wafer 15. Working synergistically with the plasma, it removes oxides and organic contaminants from the surface of the wafer 15, such as nitrogen- and hydrogen-containing gases reacting with surface oxides. The reaction produces volatile products, while fluorine-containing gases further enhance the cleaning effect, suitable for removing metal oxides and silicon oxides. Heating jackets 3 are fixedly fitted onto both sets of inlet pipes to ensure that the process gas reaches the required temperature before entering the chamber 1. Appropriate temperature can increase the chemical reaction rate and enhance the cleaning effect. A heating plate 16 is installed at the bottom of the chamber 1 for placing the wafer 15. The heating plate 16 provides controllable heating to the wafer 15, raising its surface temperature, thereby enhancing the chemical reaction rate and plasma interaction efficiency, and also helping to remove highly adsorbed contaminants. The bottom of the chamber 1... The exhaust pipe 7 is fixedly connected to the side. A wet scrubber 4, a dry adsorber 5, a catalytic converter 6, and a vacuum pump 8 are installed sequentially on the exhaust pipe 7 along the airflow direction. The exhaust gas contains unreacted process gases and their byproducts. The gas passes through the wet scrubber 4 to neutralize acidic gases (such as HF) with alkaline solution, the dry adsorber 5 to adsorb residual toxic gases (such as NH3, CHF3, etc.), and the catalytic converter 6 to convert harmful gases into harmless components (such as N2, CO2, H2O) under the action of a catalyst. The vacuum pump 8 provides power to keep the housing 1 under negative pressure to prevent gas leakage.

[0017] Specifically, such as Figure 2 and Figure 3As shown, guide rods 13 passing through the heating plate 16 are fixedly connected to both sides of the housing 1. A first lifting plate 17 movably sleeved on the guide rod 13 is fixedly connected to the free end of the first electric telescopic rod 18. The heating plate 16 and the first lifting plate 17 are fixedly connected by a guide sleeve 14 movably sleeved on the guide rod 13. The first electric telescopic rod 18 drives the first lifting plate 17 to move the guide sleeve 14, the heating plate 16, and the wafer 15 together to rise, which facilitates temperature control and flow field control to remove the oxide layer on the surface of the wafer 15. A second electric telescopic rod 19 is fixedly installed on the first lifting plate 17. A second lifting plate 21 is fixedly connected to the free end, and a rubber rod 20 passing through the heating plate 16 is fixedly connected to the top of the second lifting plate 21. The rubber material has a certain degree of softness and elasticity, which allows it to provide a buffer when in contact with the wafer 15, avoiding damage or scratches that may be caused to the surface of the wafer 15 by direct contact with hard materials. The second lifting plate 21 is driven by the second electric telescopic rod 19 to drive the rod 20 to push the wafer 15 away from the heating plate 16. The distance between the wafer 15 and the heating plate 16 is controlled to control the temperature of the wafer 15, so that the reaction gas reacts with the natural oxide layer on the surface of the wafer 15 to generate intermediate by-products.

[0018] Working principle: In use, firstly, nitrogen- and hydrogen-containing gases are introduced into the first air inlet pipe 2, and fluorine-containing gases are introduced into the second air inlet pipe 9. After being mixed in the gas spray head 11, they are evenly sprayed onto the surface of the wafer 15. The remote plasma source 10 ionizes the input process gases into a plasma state, and then introduces them into the chamber 1 through the gas spray head 11. High-energy electrons and active free radicals react with the oxide layer and organic pollutants on the surface of the wafer 15, decomposing them into volatile substances, which are discharged with the gas through the exhaust pipe 7. The discharged exhaust gas passes through the wet scrubber 4 to neutralize acidic gases with alkaline solution, the dry adsorber 5 to adsorb residual toxic gases, and the catalytic converter 6 to convert harmful gases into harmless components under the action of a catalyst. The vacuum pump 8 provides power to keep the chamber 1 under negative pressure to prevent gas leakage. Secondly, the first electric telescopic rod 18 drives the first lifting plate 17 to lift the guide sleeve 14, heating plate 16 and wafer 15 together, which facilitates temperature control and flow field control to remove the oxide layer on the surface of wafer 15. The second electric telescopic rod 19 drives the second lifting plate 21 to lift the top rod 20 to lift wafer 15 away from heating plate 16, and controls the distance between wafer 15 and heating plate 16 to control the temperature of wafer 15, so that the reaction gas reacts with the natural oxide layer on the surface of wafer 15 to generate intermediate by-products.

[0019] The above description is only a preferred embodiment of the present utility model, but the protection scope of the present utility model is not limited thereto. Any equivalent substitutions or changes made by those skilled in the art within the technical scope disclosed in the present utility model, based on the technical solution and the inventive concept of the present utility model, should be included within the protection scope of the present utility model.

Claims

1. A multifunctional cleaning and heating platform for semiconductors, comprising a housing (1), characterized in that, The top of the housing (1) is fixedly equipped with a remote plasma source (10) and a gas spray head (11). The output end of the remote plasma source (10) is fixedly connected to the gas spray head (11). The input end of the remote plasma source (10) is fixedly connected to a first air inlet pipe (2). The side of the gas spray head (11) is fixedly connected to a second air inlet pipe (9). Both sets of air inlet pipes are fixedly fitted with heating jackets (3). The bottom of the housing (1) is vertically movably equipped with a heating plate (16) for placing wafers (15). The bottom side of the housing (1) is fixedly connected to an exhaust pipe (7). The exhaust pipe (7) is sequentially equipped with a wet scrubber (4), a dry adsorber (5), a catalytic converter (6), and a vacuum pump (8) along the airflow direction.

2. The multifunctional cleaning and heating platform for semiconductors according to claim 1, characterized in that, The box (1) has guide rods (13) fixedly connected to both sides of the heating plate (16), and a first electric telescopic rod (18) for driving the heating plate (16) to rise and fall is fixedly installed at the bottom of the box (1).

3. The multifunctional cleaning and heating platform for semiconductors according to claim 2, characterized in that, The free end of the first electric telescopic rod (18) is fixedly connected to a first lifting plate (17) that is movably sleeved on the guide rod (13). The heating plate (16) and the first lifting plate (17) are fixedly connected by a guide sleeve (14) that is movably sleeved on the guide rod (13).

4. A multifunctional cleaning and heating platform for semiconductors according to claim 3, characterized in that, A second electric telescopic rod (19) is fixedly installed on the first lifting plate (17). The free end of the second electric telescopic rod (19) is fixedly connected to the second lifting plate (21). A top rod (20) passing through the heating plate (16) is fixedly connected to the top of the second lifting plate (21).

5. A multifunctional cleaning and heating platform for semiconductors according to claim 4, characterized in that, The top rod (20) is a rubber column.

6. A multifunctional cleaning and heating platform for semiconductors according to claim 5, characterized in that, The gas spray head (11) and the housing (1) are fixedly connected by fixing rods (12) arranged around its top.

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