Air-tight double-sided heat dissipating component

Abstract

The utility model discloses a kind of air-tight double-sided heat dissipation components, it is related to component packaging technical field, and it includes: component chip, the first surface of component chip is connected with heat dissipation plate, heat dissipation plate has first copper-clad surface and second copper-clad surface, copper foil conductor on first copper-clad surface surface is set to step surface, step surface is connected with first surface, the second surface of component chip is connected with electrode plate, electrode plate has third copper-clad surface and fourth copper-clad surface, third copper-clad surface surface is equipped with the convex surface of copper foil material, convex surface is connected with second surface, third copper-clad surface is equipped with the frame that is outward convex to surface, frame is set at the periphery of convex surface, after packaging is finished, component chip is located in the inside of frame and frame is contacted with step surface connection.The utility model even when in complex severe environment application, no greater stress is generated, heat dissipation plate and electrode plate both sides can play the role of heat dissipation, improve the reliability degree of packaging and the service life of component.

Description

Technical Field

[0001] This utility model relates to the field of component packaging technology, specifically to an air-sealed double-sided heat dissipation component. Background Technology

[0002] Currently, most double-sided heat dissipation power devices on the market are packaged in plastic, meaning they are sealed and insulated using epoxy injection molding. During packaging, the molding compound fills the entire device. Since different materials inevitably have different coefficients of thermal expansion, they are prone to generating significant stress when subjected to harsh environments such as high temperature and high pressure. This can lead to damage to the device itself or its interconnects, and in severe cases, cracks can form, allowing moisture and oxygen to penetrate and cause corrosion. Therefore, in applications such as aerospace, plastic packaging has lower reliability. Utility Model Content

[0003] In view of this, the present invention provides a vacuum-sealed double-sided heat dissipation component to solve the problem of low reliability of plastic-encapsulated components in the aerospace field.

[0004] According to a first aspect, this utility model provides a sealed double-sided heat dissipation component, comprising: The component chip has a first side and a second side. The first side of the component chip is connected to a heat sink. The heat sink has a first copper-clad surface and a second copper-clad surface. The copper foil conductor on the surface of the first copper-clad surface is configured as a stepped surface protruding outward from the surface. The stepped surface is connected to the first side. The second side of the component chip is connected to an electrode plate. The electrode plate has a third copper-clad surface and a fourth copper-clad surface. The surface of the third copper-clad surface is provided with a raised surface made of copper foil. The raised surface is connected to the second side. The third copper-clad surface is provided with a frame protruding outward from the surface. The frame is located around the raised surface. After encapsulation, the component chip is located inside the frame and the frame is in contact with the stepped surface.

[0005] In conjunction with the first aspect, in the first embodiment of the first aspect, the component chip is a MOS transistor chip.

[0006] In conjunction with the first embodiment of the first aspect, in the second embodiment of the first aspect, the first surface of the component chip is provided with a MOS transistor drain, and the MOS transistor drain is connected to the stepped surface.

[0007] In conjunction with the first embodiment of the first aspect, in the third embodiment of the first aspect, the second side of the component chip is provided with a MOS source stage and a MOS gate stage, and the MOS source stage and the MOS gate stage are connected to the raised surface.

[0008] In conjunction with the second embodiment of the first aspect, in the fourth embodiment of the first aspect, the drain of the MOS transistor is connected to the stepped surface by solder.

[0009] In conjunction with the third embodiment of the first aspect, in the fifth embodiment of the first aspect, the source stage and gate stage of the MOS transistor are connected to the raised surface by solder.

[0010] In conjunction with the first aspect, in the sixth embodiment of the first aspect, the component chip, the heat sink, and the electrode plate are assembled by welding or sintering processes.

[0011] In conjunction with the first aspect, in the seventh embodiment of the first aspect, a via is provided on the electrode plate, the via penetrating the third copper-clad surface and the fourth copper-clad surface.

[0012] In conjunction with the seventh embodiment of the first aspect, in the eighth embodiment of the first aspect, a sealing plug is provided at the through hole.

[0013] In conjunction with the first aspect, in the ninth embodiment of the first aspect, the stepped surface has at least one step, and the cross-sectional area of ​​the step is gradually reduced from the side closer to the first copper-clad surface to the side farther away from the first copper-clad surface.

[0014] This utility model discloses a vacuum-sealed double-sided heat dissipation component. It uses a ceramic copper-clad substrate to fabricate a heat sink on the back of the component chip and an electrode plate on the front. One side of the back heat sink has a copper foil conductor that protrudes outwards as a stepped surface. This stepped surface is interconnected with the drain of the MOSFET using welding or sintering processes. One side of the front electrode plate is etched or electroplated to create a raised surface and a surrounding frame. This raised surface is used to interconnect with the source and gate of the MOSFET. Vias on the electrode plate lead out the source, drain, and gate of the MOSFET to form surface-mount electrodes. This structural design ensures that the packaged component and its interconnections do not experience significant stress even in complex and harsh environments. Simultaneously, both the back heat sink and the front electrode plate contribute to heat dissipation, improving the reliability of the package and the lifespan of the component. This design is particularly suitable for aerospace applications. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] in: Figure 1This invention provides a schematic diagram of the structure of a sealed double-sided heat dissipation component. Figure 2 This is the second schematic diagram of the structure of the air-sealed double-sided heat dissipation component provided by this utility model; Figure 3 One of the exploded schematic diagrams of the air-sealed double-sided heat dissipation component provided by this utility model is shown; Figure 4 The second exploded view of the air-sealed double-sided heat dissipation component provided by this utility model is shown.

[0017] In the diagram: 10 - Component chip; 20 - Heat sink; 21 - Stepped surface; 30 - Electrode plate; 31 - Raised surface; 32 - Solder; 33 - Frame; 34 - Via; 40 - Sealing plug. Detailed Implementation

[0018] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.

[0019] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. Furthermore, the terms "first," "second," "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0020] In the description of this application, it should also be noted that, unless otherwise expressly specified and limited, the terms "set up," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0021] Currently, most double-sided heat dissipation power devices on the market are packaged in plastic, meaning they are sealed and insulated using epoxy injection molding. During packaging, the molding compound fills the entire device. Since different materials inevitably have different coefficients of thermal expansion, they are prone to generating significant stress when subjected to harsh environments such as high temperature and high pressure. This can lead to damage to the device itself or its interconnects, and in severe cases, cracks can form, allowing moisture and oxygen to penetrate and cause corrosion. Therefore, in applications such as aerospace, plastic packaging has lower reliability.

[0022] To address the aforementioned issues, this specification provides a sealed double-sided heat dissipation component. For example... Figures 1 to 4 As shown, the component includes: The component chip 10 has a first side and a second side. The first side of the component chip 10 is connected to a heat sink 20. The heat sink 20 has a first copper-clad surface and a second copper-clad surface. The copper foil conductor on the surface of the first copper-clad surface is configured as a stepped surface 21 protruding outward from the surface. The stepped surface 21 is connected to the first side. The second side of the component chip 10 is connected to an electrode plate 30. The electrode plate 30 has a third copper-clad surface and a fourth copper-clad surface. The surface of the third copper-clad surface is provided with a raised surface 31 made of copper foil. The raised surface 31 is connected to the second side. The third copper-clad surface is provided with a frame 33 protruding outward from the surface. The frame 33 is located outside the raised surface 31. After encapsulation, the component chip 10 is located inside the frame 33 and the frame 33 is in contact with the stepped surface 21.

[0023] The heat sink 20 and the electrode plate 30 can both dissipate heat for the packaged component chips, effectively improving the heat dissipation performance of the package structure.

[0024] In this embodiment, both the heat sink 20 and the electrode plate 30 are made of ceramic copper-clad substrate. Taking the component chip 10 as a MOS transistor chip as an example, more specifically, the first side of the component chip 10 has a MOS transistor drain. The MOS transistor drain is connected to the stepped surface 21 to achieve interconnection. The stepped surface 21 serves a sealing function during sealing. Since the stepped surface 21 is set to protrude from the surface of the first copper-clad surface, the protruding stepped surface 21 also serves a positioning function when the electrode plate 30 and the heat sink 20 are assembled. The second copper-clad surface of the heat sink 20 is not subjected to any other processing. The second copper-clad surface only serves to balance stress and dissipate heat, and has no electrical properties. The second side of the component chip 10 has a MOS transistor source and a MOS transistor gate. The MOS transistor source and the MOS transistor gate are connected to the raised surface 31. The raised surface 31 can be made by etching or electroplating. A frame 33 is set around the raised surface 31, which can protect the packaged component chip 10 and also serve a positioning function during assembly. The frame 33 can be made of Kovar alloy. The raised surface 31 and the frame 33 can also be made by etching or electroplating.

[0025] Preferably, the periphery around the raised surface 31 can also be configured as a frame pad or frame ring that protrudes outward from the surface.

[0026] In this embodiment, the electrode plate 30 is provided with a via 34, which penetrates the third copper cladding surface and the fourth copper cladding surface. The MOSFET chip source, drain and gate can be led out to form the surface mount assembly electrode.

[0027] Preferably, a sealing plug 40 is provided at the through hole 34. The sealing plug 40 is used to seal the through hole 34. The sealing plug 40 can be selected and used according to the assembly situation.

[0028] In this embodiment, the drain of the MOS transistor is connected to the stepped surface 21 via solder 32, and the source and gate of the MOS transistor are connected to the raised surface 31 via solder (not shown in the figure). The component chip 10, the heat sink 20, and the electrode plate 30 are assembled through a welding process or a sintering process. Detailed explanation follows: 1. Assembly using welding process: First, place the heat sink 20 on the heating plate of the vacuum furnace. Place a solder sheet on the stepped surface 21 of the heat sink 20, and place a solder ring below the stepped surface 21. Place the component chip 10 on the solder sheet, and then place another solder sheet on the component chip 10. Finally, install the electrode plate 30 upside down, using the stepped surface 21 on the heat sink 20 for positioning during assembly to prevent the electrode plate 30 from shifting. Fill the gap between the frame 33 of the electrode plate 30 and the stepped surface 21 of the heat sink 20 to achieve a seal. After assembly, heat and weld in a high-purity nitrogen atmosphere to complete chip welding and sealing in one step.

[0029] 2. Assembly using sintering process: First, sinter the component chip 10 onto the corresponding position on the heat sink 20, then sinter the electrode plate 30 onto the component chip 1010, and finally, use solder 32 to fill the gap between the frame 33 of the electrode plate 30 and the stepped surface 21 of the heat sink 20 under a high-purity nitrogen atmosphere to achieve sealing.

[0030] Preferably, the solder sheet used when the drain of the MOS transistor is connected to the stepped surface 21 of the first copper-clad surface, and the block-shaped solder used when the source and gate of the MOS transistor are connected to the raised surface 31 of the third copper-clad surface.

[0031] In this embodiment, the step surface 21 has at least one step, and the cross-sectional area of ​​the step gradually decreases from the side closer to the first copper-clad surface to the side farther away from the first copper-clad surface. If the step surface 21 has multiple steps, each step is positioned and encapsulated with different components.

[0032] This utility model discloses a vacuum-sealed double-sided heat dissipation component. It uses a ceramic copper-clad substrate to fabricate a heat sink 20 on the back of the component chip 10 and an electrode plate 30 on the front. One side of the back heat sink 20 has a copper foil conductor that is configured as a stepped surface 21 protruding outwards. The stepped surface 21 is interconnected with the drain of the MOS transistor using a welding or sintering process. One side of the front electrode plate 30 is etched or electroplated to create a raised surface 31 and a surrounding frame 33. The raised surface 31 is used to interconnect with the source and gate of the MOS transistor using a welding or sintering process. Vias 34 on the electrode plate 30 allow the source, drain, and gate of the MOS transistor to be led out to form surface mount electrodes. This structural design ensures that the packaged component and its interconnections do not experience significant stress even in complex and harsh environments. Simultaneously, both the back heat sink 20 and the front electrode plate 30 provide heat dissipation, improving the reliability of the package and the lifespan of the component. This design is particularly suitable for aerospace applications.

[0033] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this utility model, and not to limit it. Although this utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this utility model.

Claims

1. A sealed double-sided heat dissipation component, characterized in that, include: The component chip has a first side and a second side. The first side of the component chip is connected to a heat sink. The heat sink has a first copper-clad surface and a second copper-clad surface. The copper foil conductor on the surface of the first copper-clad surface is configured as a stepped surface protruding outward from the surface. The stepped surface is connected to the first side. The second side of the component chip is connected to an electrode plate. The electrode plate has a third copper-clad surface and a fourth copper-clad surface. The surface of the third copper-clad surface is provided with a raised surface made of copper foil. The raised surface is connected to the second side. The third copper-clad surface is provided with a frame protruding outward from the surface. The frame is located around the raised surface. After encapsulation, the component chip is located inside the frame and the frame is in contact with the stepped surface.

2. The air-sealed double-sided heat dissipation component according to claim 1, characterized in that, The component chip is a MOS transistor chip.

3. The air-sealed double-sided heat dissipation component according to claim 2, characterized in that, The first side of the component chip is provided with a MOS transistor drain, and the MOS transistor drain is connected to the stepped surface.

4. The air-sealed double-sided heat dissipation component according to claim 2, characterized in that, The second side of the component chip is provided with a MOS source stage and a MOS gate stage, which are connected to the raised surface.

5. The air-sealed double-sided heat dissipation component according to claim 3, characterized in that, The drain of the MOS transistor is connected to the stepped surface by solder.

6. The air-sealed double-sided heat dissipation component according to claim 4, characterized in that, The MOS transistor source and gate are connected to the raised surface by solder.

7. The air-sealed double-sided heat dissipation component according to claim 1, characterized in that, The component chip, the heat sink, and the electrode plate are assembled using a welding or sintering process.

8. The air-sealed double-sided heat dissipation component according to claim 1, characterized in that, The electrode plate is provided with vias that penetrate the third copper-clad surface and the fourth copper-clad surface.

9. The air-sealed double-sided heat dissipation component according to claim 8, characterized in that, A sealing plug is provided at the through hole.

10. The air-sealed double-sided heat dissipation component according to claim 1, characterized in that, The stepped surface has at least one step, and the cross-sectional area of ​​the step gradually decreases from the side closer to the first copper-clad surface to the side farther away from the first copper-clad surface.

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