A multi-base island package module

Abstract

The application relates to the technical field of semiconductor packaging, in particular to a multi-base-island packaging module which comprises a packaging body, a first base island, a second base island and a third base island; the first base island, the second base island and the third base island are arranged in the packaging body; a power device is attached to the first base island, a driving chip is attached to the second base island, and a voltage boosting device is arranged on the third base island, the voltage boosting device is used for boosting the voltage of the gate of the power device; the first base island has a heat dissipation surface on the side away from the power device; and the heat dissipation surface is exposed on one side of the packaging body. The heat dissipation surface can effectively improve the heat dissipation performance of the device and meet the heat dissipation requirement.

Description

Technical Field

[0001] This application relates to the field of semiconductor packaging technology, and more specifically, to a multi-island packaging module. Background Technology

[0002] Currently, most mainstream three-phase IPM modules on the market adopt traditional leadframe packaging technology. Their power devices, driver chips, and other control components typically share a base island or are arranged in the same plane through complex interconnect structures. Due to the concentrated arrangement of multiple heat-generating components, heat sources interfere with each other, resulting in a single heat dissipation path, high overall thermal resistance, and impacting the module's long-term reliability and power output capability. Existing technologies primarily rely on natural conduction from the front and back of the plastic package and the sides of the leads, which has limited heat dissipation capacity, especially under high load conditions where temperature rise is significant. This also leads to low device utilization and difficulty in increasing power density. Furthermore, to meet heat dissipation requirements, existing technologies often require additional heat sinks or complex packaging processes, increasing the overall cost of the module. Utility Model Content

[0003] The purpose of this application is to provide a multi-base island package module, which can effectively improve the heat dissipation performance of the device and meet the heat dissipation requirements through the arrangement of heat dissipation surfaces.

[0004] This application is implemented as follows: This application provides a multi-island package module, including a package body, a first island, a second island, and a third island; the first island, the second island, and the third island are disposed in the package body; a power device is mounted on the first island, a driver chip is mounted on the second island, and a boost device is provided on the third island, the boost device being used to boost the gate voltage of the power device; the projections of the first island, the second island, and the third island on a reference plane have gaps; the package body fills the gaps to electrically isolate the first island, the second island, and the third island; the first island has a heat dissipation surface on the side facing away from the power device; the heat dissipation surface is exposed on one side of the package body.

[0005] As an optional implementation, the first base island, the second base island, and the third base island are located in parallel and spaced apart in the plane; the first base island is located at a first height, the second base island is located at a second height, and the third base island is located at a third height; wherein, the third height is greater than the first height and less than the second height.

[0006] As an alternative implementation, there are two first base islands, arranged on either side of the third base island.

[0007] As an optional implementation, the first base island has a base island side parallel to the outer side of the package body, and the distance between the base island side and the outer side of the package body is less than 1 / 2 of the package body thickness.

[0008] As an optional implementation, the edge of the heat dissipation surface is provided with a recess to form a stepped surface at the edge of the first base island; the package covers the stepped surface and is flush with the heat dissipation surface.

[0009] As an optional implementation, the package body is further provided with signal pins; the first base island is provided with connecting ribs exposed outside the package body; the minimum creepage distance between the connecting ribs and the signal pins is greater than 3mm.

[0010] As an optional implementation, the first base island is provided with connection pins; the connection pins and the signal pins are respectively disposed on opposite sides of the package body, and the width of the connection pins is greater than that of the signal pins.

[0011] As an optional implementation, the first base island is provided with two of the power devices.

[0012] As an optional implementation, the power device includes any one of an insulated-gate bipolar transistor, a reverse-biased insulated-gate bipolar transistor, an enhancement-gallium nitride transistor, a silicon carbide field-effect transistor, and a fast recovery field-effect transistor.

[0013] The beneficial effects of this application include: The multi-island packaging module provided in this application achieves physical isolation and layout optimization of different functional chips by placing power devices, driver chips, and boost devices on independent first, second, and third islands, respectively. This effectively reduces mutual interference between heat sources and improves the internal heat distribution of the module. Specifically, the heat dissipation surface of the first island facing away from the power device is exposed in the package, significantly enhancing the direct heat dissipation capability of the power device, reducing overall thermal resistance, and improving the module's heat dissipation efficiency and long-term operational reliability. Simultaneously, this structure helps improve device utilization and power density, and reduces reliance on additional heat sinks or complex packaging processes, thereby improving performance while reducing system costs. Attached Figure Description

[0014] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0015] Figure 1This is one of the structural schematic diagrams of the multi-base island packaging module in an embodiment of this application; Figure 2 This is a second schematic diagram of the structure of the multi-base island packaging module according to an embodiment of this application; Figure 3 This is the third schematic diagram of the structure of the multi-base island packaging module in this application embodiment; Figure 4 This is the fourth schematic diagram of the structure of the multi-base island packaging module in the embodiments of this application; Figure 5 This is the fifth schematic diagram of the structure of the multi-base island packaging module in the embodiments of this application; Figure 6 This is the sixth schematic diagram of the structure of the multi-base island packaging module in the embodiments of this application.

[0016] icon: 100 - Package; 101 - First base island; 102 - Second base island; 103 - Third base island; 104 - Power device; 105 - Driver chip; 106 - Boost device; 107 - Heat dissipation surface; 108 - Side of base island; 109 - Signal pin; 110 - Connecting rib; 111 - Connecting pin. Detailed Implementation

[0017] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0018] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0019] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. Furthermore, the terms "first," "second," "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0020] In the description of this application, it should also be noted that, unless otherwise expressly specified and limited, the terms "set up," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0021] Currently, most mainstream three-phase IPM modules on the market adopt traditional leadframe packaging technology. Their power devices, driver chips, and other control components typically share a base island or are arranged in the same plane through complex interconnect structures. Due to the concentrated arrangement of multiple heat-generating components, heat sources interfere with each other, resulting in a single heat dissipation path, high overall thermal resistance, and impacting the module's long-term reliability and power output capability. Existing technologies primarily rely on natural conduction from the front and back of the plastic package and the sides of the leads, which has limited heat dissipation capacity, especially under high load conditions where temperature rise is significant. This also leads to low device utilization and difficulty in increasing power density. Furthermore, to meet heat dissipation requirements, existing technologies often require additional heat sinks or complex packaging processes, increasing the overall cost of the module.

[0022] To solve the above technical problems, refer to Figure 1 , Figure 2 As shown, this application provides a multi-base island package module, including a package body 100, a first base island 101, a second base island 102, and a third base island 103; the first base island 101, the second base island 102, and the third base island 103 are disposed in the package body 100; a power device 104 is mounted on the first base island 101, a driver chip 105 is mounted on the second base island 102, and a boost device 106 is provided on the third base island 103, the boost device 106 being used for the voltage of the gate of the power device 104.

[0023] Reference Figure 3 , Figure 4 As shown, the first base island 101 has a heat dissipation surface 107 on the side away from the power device 104; the heat dissipation surface 107 is exposed on the side of the package 100.

[0024] It should be noted that, in this embodiment, the first base island 101 is used to support the power device 104, and a heat dissipation surface 107 exposed to the package 100 is provided on the side facing away from the power device 104. This heat dissipation surface 107 serves as the main heat conduction path when the power device 104 is working, and can directly contact the external heat sink or the copper-clad metal layer on the printed circuit board to achieve efficient heat conduction.

[0025] The principle of this embodiment is as follows: by designing the heat dissipation surface 107 of the first base island 101 as an exposed structure, the thermal resistance path of heat from the power device 104 through the chip mounting layer and the base island metal material to the outside of the module is significantly shortened, thereby improving the overall heat dissipation efficiency. Simultaneously, since the power device 104 is typically the component with the highest heat generation in the module, concentrating it on the first base island 101 with the exposed heat dissipation surface 107 enables targeted thermal management. During operation, the heat generated by the power device 104 during switching is rapidly conducted to the first base island 101 through the mounting material and efficiently dissipated to the external environment via the exposed heat dissipation surface 107, preventing heat accumulation inside the module, thereby reducing the chip operating temperature and improving the module's power density and long-term operational reliability. This structure enhances heat dissipation while maintaining electrical isolation from other base islands (such as the second base island 102 where the driver chip 105 is located), balancing thermal performance and electrical safety.

[0026] During operation, the boost converter 106, located on the third base island 103, provides the required drive voltage to the gate of the power device 104; the driver chip 105, located on the second base island 102, receives control signals and drives the power device 104 to switch on and off; the power device 104, located on the first base island 101, performs the power conversion of the main circuit. Since the power device 104 is the main heat source, its base island has an exposed heat dissipation surface 107, which can directly contact an external heat sink, forming a highly efficient and low thermal resistance heat dissipation path. The driver chip 105 and the boost converter 106 generate relatively little heat, and their respective base islands also have independent heat dissipation capabilities. This structure, through functional partitioning, heat source separation, and directional heat dissipation design, improves the overall thermal management efficiency and electrical reliability of the module.

[0027] It should be noted that, in terms of structural design, the first base island 101 can use a thicker metal lead frame material (such as copper or copper alloy) to enhance thermal conductivity and mechanical strength. One side of the first base island 101 is used to mount power devices 104, while the other side is designed as a flat, large-area metal surface as a heat dissipation surface 107. This heat dissipation surface 107 is not covered by the package body 100 after encapsulation, and is completely exposed on the bottom of the package body 100, facilitating direct contact with the PCB or heat sink in the future.

[0028] For example, the exposed heat dissipation surface 107 may be treated to resist oxidation and enhance adhesion, such as by silver plating, tin plating, or electroless nickel-gold plating, to reduce contact thermal resistance and improve thermal conductivity with thermally conductive adhesive, solder, or heat dissipation structure.

[0029] The multi-island packaging module provided in this application embodiment achieves physical isolation and layout optimization of different functional chips by setting the power device 104, driver chip 105 and boost device 106 on independent first, second and third base islands 103 respectively, effectively reducing mutual interference between heat sources and improving the heat distribution inside the module. Among them, the heat dissipation surface 107 of the first base island 101 facing away from the power device 104 is exposed to the package body 100, which significantly enhances the direct heat dissipation capability of the power device 104, reduces the overall thermal resistance, and improves the heat dissipation efficiency and long-term operational reliability of the module. At the same time, this structure is conducive to improving device utilization and power density, and can reduce the dependence on additional heat sinks or complex packaging processes, thereby improving performance while reducing system cost.

[0030] The projections of the first base island 101, the second base island 102, and the third base island 103 onto the reference plane have gaps; the package 100 fills the gaps to electrically isolate the first base island 101, the second base island 102, and the third base island 103.

[0031] It should be noted that, in this embodiment, a multi-base-island lead frame structure is adopted to mount the power device 104, the driver chip 105, and the boost device 106 on the electrically isolated first, second, and third base islands 103, respectively, and the gaps between the base islands are filled by the package 100, thereby achieving effective physical and electrical isolation between the functional units. It should also be noted that the reference plane is defined as a plane parallel to the plane containing the first base island 101, the second base island 102, and the third base island 103.

[0032] It should be noted that, in terms of physical structure design, the first, second, and third base islands 103 are designed as independent metal platforms on the reference plane of the lead frame, with a certain gap (typically tens to hundreds of micrometers) maintained between each base island. This discontinuous layout fundamentally cuts off the electrical connection path where all chips share the same conductive platform in a traditional single base island, avoiding common ground impedance and direct metal conduction paths. In terms of packaging technology, highly insulating encapsulation materials such as epoxy molding compound (EMC) are used to fill the gaps between the base islands and cover the entire internal structure of the module to form the package 100. This encapsulation material has high insulation resistance and high withstand voltage characteristics (typically reaching hundreds of volts or even thousands of volts), which can form a reliable dielectric barrier between adjacent base islands, effectively preventing lateral current leakage or breakdown, and ensuring complete electrical isolation between the base islands.

[0033] The boost device 106 can employ a bootstrap circuit, which includes a bootstrap diode and a bootstrap capacitor. It periodically charges and stores energy using switching operations, providing a gate drive voltage higher than the bus voltage when the high-side power transistor is turned on.

[0034] It should be noted that the bootstrap diode not only serves as the charging path for the bootstrap capacitor in the circuit, but also has unidirectional conduction characteristics, effectively blocking external transient high voltage or electrostatic discharge (ESD) from flowing backwards from the driver side or gate line into the control chip or low-voltage power supply circuit. When electrostatic discharge or voltage spikes occur, the bootstrap diode reverse-biased cutoff, limiting the propagation path of abnormal current, thereby protecting the sensitive driver chip and control circuit. Therefore, the bootstrap diode in this embodiment of the application enhances the module's protection against electrostatic discharge and voltage surges while achieving normal boost function, improving system reliability.

[0035] For example, one or two power devices 104 are provided on the first base island 101. The power device 104 includes any one or two of the following: insulated-gate bipolar transistors (IGBTs), reverse-biased IGBTs, enhancement-mode gallium nitride transistors (GaN transistors), silicon carbide field-effect transistors (SFETs), and fast recovery field-effect transistors (FFETs). See details for further information. Figure 2 , Figure 5 as well as Figure 6 As shown.

[0036] Reference Figure 3 As shown, in one optional implementation, the first base island 101, the second base island 102, and the third base island 103 are located in parallel and spaced apart in the plane; the first base island 101 is located at a first height, the second base island 102 is located at a second height, and the third base island 103 is located at a third height; wherein, the third height is greater than the first height and less than the second height.

[0037] It should be noted that, in the embodiments of this application, the first base island 101, the second base island 102 and the third base island 103 are arranged in a layered manner with parallel structures at different heights in space. That is, the three are located on reference planes that are parallel to each other but at different heights. Specifically, the third base island 103 is at the middle height (third height), which is higher than the first base island 101 (first height) where the power device 104 is located, but lower than the second base island 102 (second height) where the driver chip 105 is located.

[0038] This application embodiment optimizes the electrical isolation and interconnect reliability within the module through a highly differentiated layout. During operation, the boost device 106 is located on the third base island 103, and its output needs to be connected to the gate of the driver chip 105 or the power device 104 via bonding wires. Setting the third base island 103 at the middle height can shorten the lead span between it and the chips above and below, reduce the bonding wire length and arc height, thereby reducing parasitic inductance and resistance, improving signal transmission quality, and reducing the risk of wire breakage due to vibration or thermal stress.

[0039] This stepped height arrangement in the embodiments of this application helps to avoid short circuits between metal frames during the packaging process, improving mold alignment accuracy and packaging yield. Furthermore, the lower first base island 101 facilitates the exposure of its back heat dissipation surface 107 and good contact with the PCB, while the higher second base island 102 provides the driver chip 105 with more space away from the heat source, enhancing thermal isolation. The overall structure achieves an optimized balance between improving heat dissipation performance, reducing parasitic parameters, and enhancing reliability.

[0040] Reference Figure 1 , Figure 2 As shown, as an optional implementation, there are two first base islands 101, which are arranged on both sides of the third base island 103.

[0041] It should be noted that in this embodiment, two first base islands 101 are provided, respectively arranged on both sides of the third base island 103, and each first base island 101 is equipped with a power device 104. This embodiment achieves symmetry of the power circuit and a low parasitic inductance design by symmetrically distributing the power devices 104 on both sides of the boost device 106 (located on the third base island 103). During operation, the two power devices 104 (such as the upper and lower transistors in a half-bridge structure) are electrically connected and cooled through their respective first base islands 101, while the boost device 106 on the third base island 103 provides a floating power supply for driving the high-side power transistor. Since the boost device 106 is located in the center, the bonding wire length from its output terminal to the gate and source of the power devices 104 on both sides tends to be symmetrical and minimized, effectively reducing the loop area and parasitic inductance of the drive circuit, and suppressing voltage ringing and electromagnetic interference during switching. Simultaneously, the symmetrical physical layout helps to balance the thermal stress distribution, improve the mechanical reliability of the module under temperature cycling, and enhance the overall current distribution balance. In addition, this structure facilitates the formation of a natural antiparallel path for the power current, further offsetting the magnetic field, reducing the total inductance of the system, and improving switching speed and energy efficiency. It is suitable for the packaging requirements of high-frequency, high-power-density smart power modules.

[0042] Reference Figure 3 As shown, in one optional implementation, the first base island 101 has a base island side surface 108 parallel to the outer side surface of the package 100, and the distance between the base island side surface 108 and the outer side surface of the package 100 is less than 1 / 2 the thickness of the package 100. This effectively increases the area of ​​the first base island 101, ensuring a larger heat dissipation surface 107.

[0043] It should be noted that, in this embodiment, the first base island 101 has a base island side surface 108 parallel to the outer side surface of the package 100, and the distance between the base island side surface 108 and the outer side surface of the package 100 is less than half the thickness of the package 100. By reducing this distance, while ensuring the insulation performance and electrical safety distance of the package 100, the first base island 101 is brought closer to the edge of the package in the horizontal direction, thereby effectively expanding its usable area inside the package.

[0044] Within a limited package size, increasing the planar area of ​​the first base island 101 not only accommodates a larger power device 104, but more importantly, significantly increases its cross-sectional area as a heat conduction path and the area of ​​the rear heat dissipation surface 107, thereby improving overall heat conduction capability. During operation, the heat generated by the power device 104 is rapidly diffused laterally through the larger base island and conducted to the exposed heat dissipation surface 107 on the back of the base island, achieving efficient heat dissipation. At the same time, the larger base island area also helps to reduce current density, reduce local hot spots, and improve the module's current carrying capacity and thermal stability. Therefore, this design achieves a synergistic improvement in heat dissipation capability, electrical performance, and structural compactness by optimizing the base island layout space without increasing the package volume 100.

[0045] As an optional implementation, the edge of the heat dissipation surface 107 is provided with a recess so that the edge of the first base island 101 forms a stepped surface; the package 100 covers the stepped surface and is flush with the heat dissipation surface 107.

[0046] It should be noted that, in this embodiment, a recessed structure is provided at the edge of the heat dissipation surface 107 of the first base island 101, forming a stepped surface at the edge of the base island. The material of the package 100 fills and covers this stepped surface, and the bottom of the package 100 remains flush with the exposed heat dissipation surface 107. This application achieves mechanical interlocking and interface enhancement between the package 100 and the first base island 101 through the stepped surface structure. During operation, the encapsulation material, such as epoxy molding compound, flows into the recessed area during injection molding. After curing, it forms a physical bond with the metal base island, significantly increasing the bonding area and adhesion between the two. This effectively suppresses interface delamination or peeling caused by differences in thermal expansion coefficients, improving the structural reliability and sealing of the module under harsh conditions such as high temperature, high humidity, and thermal cycling. At the same time, the design that the bottom of the package 100 is flush with the heat dissipation surface 107 ensures that the exposed heat dissipation surface 107 is flat and intact, without affecting its contact with the PCB or heat sink, maintaining efficient heat dissipation performance. This structure enhances packaging strength and environmental resistance while also addressing thermal management requirements, thereby improving the long-term operational stability and lifespan of the smart power module.

[0047] The recess can be set on one or both sides of the first base island 101, or it can surround the entire perimeter as needed.

[0048] Reference Figure 1 As shown, as an optional implementation, the package 100 is further provided with signal pins 109; the first base island 101 is provided with connecting ribs 110 exposed outside the package 100; the minimum creepage distance between the connecting ribs 110 and the signal pins 109 is greater than 3mm.

[0049] In this embodiment, the package 100 contains signal pins 109, and a connecting rib 110 exposed outside the package 100 is provided on the first base island 101 for electrical connection of the power circuit. To meet the high-voltage application requirements of bus voltage ≥650V, the minimum creepage distance between the connecting rib 110 and the adjacent signal pin 109 is specified to be greater than 3mm.

[0050] Through structured layout and insulation design, sufficient electrical isolation between power terminals and sensitive signal lines is ensured under high voltage. Creepage distance is a key parameter determining high-voltage insulation performance. Under high-voltage operating conditions, insufficient creepage distance can easily lead to surface leakage, arcing, or insulation breakdown, causing module failure. This design, by precisely controlling the position of metal components and the packaging process, ensures that a sufficiently long insulation path is maintained between the connecting rib 110 and the signal pin 109 on the surface of the package 100. Combined with high CTI-value packaging materials, surface discharge channels are effectively blocked under high-voltage environments. This design not only meets the insulation requirements of IEC and other safety standards for applications of 650V and above, but also maintains stable insulation performance in harsh environments such as high temperature and high humidity, significantly improving the safety and reliability of the module.

[0051] It should be noted that the minimum creepage distance between the edge of the heat dissipation surface 107 and the exposed connecting rib 110 and the signal pin 109 is also greater than 3mm, in order to meet the requirements of high voltage applications with voltage ≥650V.

[0052] Reference Figure 1 As shown, as an optional implementation, the first base island 101 is provided with a connection pin 111; the connection pin 111 and the signal pin 109 are respectively disposed on opposite sides of the package body 100, and the width of the connection pin 111 is greater than that of the signal pin 109.

[0053] For example, the width of connection pin 111 is 1.2 to 12 times the width of signal pin 109.

[0054] It should be noted that the first base island 101 is provided with a connection pin 111 for carrying high current. This connection pin 111 and the signal pin 109 are respectively arranged on opposite sides of the package 100, and the width of the connection pin 111 is greater than that of the signal pin 109. Through physical separation and structural differentiation design, spatial isolation and functional optimization of the power circuit and the signal circuit are achieved. Placing the high-current connection pin 111 and the sensitive signal pin 109 on opposite sides of the package 100 can significantly increase the electrical clearance and creepage distance between them, effectively suppressing electromagnetic interference of high-noise power current to the control signal, and improving the module's anti-interference capability and signal integrity. At the same time, the wider design of the connection pin 111 can reduce its resistance and current density, improve current carrying capacity, reduce heat generation, and facilitate low-impedance connection with external circuits; while the narrower width of the signal pin 109 is suitable for low-current, high-density wiring requirements. This layout not only optimizes the internal electromagnetic environment but also enhances thermal management and electrical safety, making it particularly suitable for high-voltage, high-current intelligent power module applications.

[0055] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A multi-base island packaged module, characterized in that, The package includes a package body (100), a first base island (101), a second base island (102), and a third base island (103); the first base island (101), the second base island (102), and the third base island (103) are disposed in the package body (100); a power device (104) is mounted on the first base island (101), a driver chip (105) is mounted on the second base island (102), and a boost device (106) is provided on the third base island (103), the boost device (106) being used to boost the voltage of the gate of the power device (104); the first base island (101) has a heat dissipation surface (107) on the side away from the power device (104); the heat dissipation surface (107) is exposed on one side of the package body (100).

2. The multi-base island packaging module according to claim 1, characterized in that, The projections of the first base island (101), the second base island (102), and the third base island (103) onto the reference plane have gaps; the package (100) fills the gaps so that the first base island (101), the second base island (102), and the third base island (103) are electrically isolated.

3. The multi-base island packaging module according to claim 1, characterized in that, The first base island (101), the second base island (102), and the third base island (103) are located in parallel planes; the first base island (101) is located at a first height, the second base island (102) is located at a second height, and the third base island (103) is located at a third height; wherein, the third height is greater than the first height and the third height is less than the second height.

4. The multi-base island packaging module according to any one of claims 1-3, characterized in that, There are two first base islands (101), which are arranged on both sides of the third base island (103).

5. The multi-base island packaging module according to any one of claims 1-3, characterized in that, The first base island (101) has a base island side surface (108) parallel to the outer side surface of the package (100), and the distance between the base island side surface (108) and the outer side surface of the package (100) is less than 1 / 2 of the thickness of the package (100).

6. The multi-base island packaging module according to any one of claims 1-3, characterized in that, The edge of the heat dissipation surface (107) is provided with a recess so that the edge of the first base island (101) forms a stepped surface; the package (100) covers the stepped surface and is flush with the heat dissipation surface (107).

7. The multi-base island packaging module according to any one of claims 1-3, characterized in that, The package (100) is also provided with signal pins (109); the first base island (101) is provided with connecting ribs (110) exposed to the package (100); the minimum creepage distance between the connecting ribs (110) and the signal pins (109) is greater than 3mm.

8. The multi-island packaging module according to claim 7, characterized in that, The first base island (101) is provided with a connection pin (111); the connection pin (111) and the signal pin (109) are respectively disposed on opposite sides of the package (100), and the width of the connection pin (111) is greater than that of the signal pin (109).

9. The multi-base island packaging module according to any one of claims 1-3, characterized in that, Two power devices (104) are provided on the first base island (101).

10. The multi-base island packaging module according to claim 9, characterized in that, The power device (104) includes any one of an insulated gate bipolar transistor, a reverse-biased insulated gate bipolar transistor, an enhancement-gallium nitride transistor, a silicon carbide field-effect transistor, and a fast recovery field-effect transistor.

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