A high purity elemental silicon processing apparatus
Patent Information
- Application Number
- CN202522482584.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-24
- Publication Date
- 2026-10-09
- Estimated Expiration
- 2035-11-24
AI Technical Summary
[0003]本申请的目的在于提供一种高纯度元素硅处理装置，用于解决相关技术中元素硅筛分过程中，会对筛网正对与进料口的位置产生局部冲击，并会堆积在堆积该位置，降低筛分效率的问题
[0020]与现有技术相比，本申请所达到的有益效果：本申请中，小颗粒元素硅通过物料进口进入筛分腔，并落在重分布件上，并通过下料口落至筛网。通过在筛网和物料进口之间设置重分布件，减少元素硅落差。从而减少减小了物料对筛网的冲击。此外，本申请中顶壁成型为锥形面的至少一部分。这意味这元素硅在与顶壁接触后，能够沿锥形面滑落分散。滑落分散的元素硅能够通过分布于顶壁不同位置的多个下料口落出，实现元素硅的分散下落，避免造成堆积，有利于元素硅的充分筛分，提高了筛分效率。
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Figure CN224823436U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of elemental silicon sieving technology, and in particular to a high-purity elemental silicon processing device. Background Technology
[0002] In related technologies, small-particle elemental silicon needs to be sieved through a product sieve before entering a grinding mill to remove lumps or impurities. However, when the silicon is fed through the product sieve's inlet, it tends to concentrate at the position directly opposite the inlet, causing significant impact on the sieve. Since the sieves used for elemental silicon production are generally quite fine and have relatively low overall strength, this localized impact can lead to deformation and damage. Furthermore, the silicon falling onto the sieve accumulates at the position directly opposite the inlet, greatly reducing sieving efficiency. Summary of the Invention
[0003] The purpose of this application is to provide a high-purity elemental silicon processing device to solve the problem in the related technology that during the elemental silicon screening process, the screen will be subjected to local impact at the position directly opposite the feed inlet, and the material will accumulate at that position, reducing the screening efficiency.
[0004] To solve the above-mentioned technical problems, this application adopts the following technical solution:
[0005] This application provides a high-purity elemental silicon processing apparatus, comprising:
[0006] The body has a screening chamber inside, a material inlet connected to the screening chamber at the top of the body, and a material outlet connected to the screening chamber at the bottom of the body.
[0007] A redistributor is disposed in the screening chamber and separates the screening chamber. The material inlet and the material outlet are respectively located on both sides of the redistributor. The redistributor includes a top wall on the side opposite to the material inlet. The top wall is formed as at least a portion of a conical surface. A plurality of discharge ports are provided on the top wall. The discharge ports penetrate the redistributor in the direction of gravity.
[0008] A screen is disposed in the screening chamber and located between the redistribution member and the material outlet. The screen is used to screen elemental silicon.
[0009] In this design, small-particle elemental silicon enters the screening chamber through the material inlet, falls onto the redistributor, and then drops onto the screen through the discharge port. By placing the redistributor between the screen and the material inlet, the drop height of the elemental silicon is reduced, thus minimizing the impact of the material on the screen. Furthermore, at least a portion of the top wall in this design is formed as a conical surface. This means that after contacting the top wall, the elemental silicon will slide and disperse along the conical surface. The dispersed elemental silicon can then fall through multiple discharge ports distributed at different locations on the top wall, achieving a dispersed drop of elemental silicon. This results in a uniform distribution of elemental silicon in all areas of the upper part of the screen, facilitating thorough screening and improving screening efficiency.
[0010] Optionally, the top wall is conical, and the plurality of discharge ports are arranged in an array. Multiple rings of discharge port groups are distributed axially on the top wall. Each ring of discharge port groups includes a plurality of discharge ports that are spaced apart circumferentially along the top wall. The multiple rings of discharge port groups are spaced apart radially along the conical shape.
[0011] Optionally, the cone-shaped cone apex is provided with the discharge port.
[0012] In this design, the top wall is conical, ensuring that the elemental silicon falling through the material inlet falls entirely onto the conical surface. Furthermore, multiple concentric rings of feed inlets are distributed axially along the top wall. Each ring includes multiple feed inlets spaced circumferentially along the top wall, and these rings are radially spaced along the conical surface. This design optimizes the distribution of the feed inlets, ensuring that the elemental silicon falls evenly through each inlet, thereby guaranteeing a more uniform distribution of elemental silicon in all areas of the upper part of the screen.
[0013] Optionally, the taper of the conical surface is 5°-15°.
[0014] Optionally, the material inlet, material outlet, and the cone-shaped surface are coaxial.
[0015] Optionally, the inner wall of the body is provided with a buffer layer.
[0016] Optionally, the buffer layer is a polyurethane layer.
[0017] Optionally, the redistribution component is made of polyurethane material.
[0018] Optionally, the screen has multiple sieve holes formed throughout in the direction of gravity.
[0019] Optionally, the discharge port is a circular hole, and the diameter of the discharge port is larger than the diameter of the sieve hole.
[0020] Compared with the prior art, the beneficial effects achieved by this application are as follows: In this application, small-particle elemental silicon enters the screening chamber through the material inlet, falls onto the redistributor, and then falls onto the screen through the discharge port. By setting the redistributor between the screen and the material inlet, the drop height of the elemental silicon is reduced, thereby reducing the impact of the material on the screen. Furthermore, in this application, the top wall is formed as at least a portion of a conical surface. This means that after contacting the top wall, the elemental silicon can slide and disperse along the conical surface. The dispersed elemental silicon can fall out through multiple discharge ports distributed at different positions on the top wall, achieving dispersed falling of the elemental silicon, avoiding accumulation, facilitating thorough screening of the elemental silicon, and improving screening efficiency. Attached Figure Description
[0021] To more clearly illustrate the technical solutions in the embodiments or related technologies of this disclosure, the accompanying drawings used in the description of the embodiments or prior art will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0022] Figure 1 These are cross-sectional schematic diagrams of some embodiments provided in this application;
[0023] Figure 2 This is an enlarged schematic diagram of the structure of part A in some embodiments provided in this application.
[0024] Explanation of reference numerals in the attached drawings: 1-Main body; 2-Redistribution component; 3-Screen; 4-Buffer layer; 11-Material inlet; 12-Material outlet; 21-Top wall; 22-Discharge port; 31-Screen hole. Detailed Implementation
[0025] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure / application, and not all embodiments. The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit this application or its application or use.
[0026] Example 1
[0027] This embodiment describes a high-purity elemental silicon processing device, referencing... Figure 1 and Figure 2 The high-purity elemental silicon processing device in this embodiment includes: a body 1, a screening chamber inside the body 1, a material inlet 11 connected to the screening chamber at the top of the body 1, and a material outlet 12 connected to the screening chamber at the bottom of the body 1. During screening, elemental silicon enters the screening chamber through the material inlet 11 and exits through the material outlet 12.
[0028] Furthermore, a redistributor 2 is provided in the screening chamber. The redistributor 2 can divide the screening chamber. The material inlet 11 and the material outlet 12 are located on opposite sides of the redistributor 2. The redistributor 2 includes a top wall 21 on the side opposite to the material inlet 11, and the top wall 21 is formed as at least a portion of a conical surface. For example, it can be a conical surface or a frustoconical surface. In some embodiments, the top wall 21 is formed as a frustoconical surface, and the vertical projection of the material outlet 12 on the top wall 21 intersects the conical surface of the frustoconical surface. When elemental silicon falls through the material inlet 11, it can fall onto the conical surface. The conical surface can disperse the elemental silicon, preventing the elemental silicon from accumulating in the position of the redistributor 2 below the material inlet 11. Furthermore, a plurality of discharge ports 22 are provided on the top wall 21, and the discharge ports 22 penetrate the redistributor 2 in the direction of gravity. The scattered elemental silicon can continue to fall through the feed port 22 onto the screen 3 located between the redistribution member 2 and the material outlet 12 in the screening chamber, and be screened through multiple screen holes 31 formed in the direction of gravity of the screen 3.
[0029] In some embodiments, the distance between the top end of the redistributor 2 and the bottom end of the material inlet 11 is the same as the distance between the bottom end of the redistributor 2 and the top end of the screen 3.
[0030] During screening, small particles of elemental silicon enter the screening chamber through material inlet 11, fall onto the redistributor 2, and then fall onto the screen 3 through discharge port 22. By setting the redistributor 2 between the screen 3 and the material inlet 11, the drop height of elemental silicon is reduced, thereby reducing the impact of the material on the screen 3. In some embodiments, to enhance the buffering effect of the redistributor 2, the redistributor 2 is made of polyurethane material.
[0031] Furthermore, at least a portion of the top wall 21 is formed as a conical surface. This means that after contacting the top wall 21, the elemental silicon can slide and disperse along the conical surface. The dispersed elemental silicon can fall out through multiple discharge ports 22 distributed at different positions on the top wall 21, achieving dispersed falling of the elemental silicon, avoiding accumulation, facilitating thorough screening of the elemental silicon, and improving screening efficiency.
[0032] Example 2
[0033] Based on the same inventive concept as Embodiment 1, refer to Figure 1 and Figure 2 In this embodiment, the top wall 21 is conical. Elemental silicon falling through the material inlet 11 will fall completely onto the conical surface and disperse by sliding down the surface. Furthermore, the material inlet 11, the material outlet 12, and the conical surface are coaxial. This ensures that the elemental silicon falling through the material inlet 11 can be uniformly dispersed on the top wall 21.
[0034] Furthermore, multiple discharge ports 22 are arranged in an array on the conical surface. Multiple rings of discharge ports are distributed axially along the top wall 21, each ring including multiple discharge ports 22 spaced circumferentially along the top wall 21. These rings are also spaced radially along the conical surface, with a discharge port 22 located at the apex of the conical surface. This embodiment optimizes the distribution of the discharge ports 22, ensuring that elemental silicon can fall evenly through each discharge port 22, thereby guaranteeing a more uniform distribution of elemental silicon in the upper region of the screen 3.
[0035] Furthermore, the taper of the conical surface is 5°-15°. In practical applications, the specific taper of the conical surface can be determined based on factors such as the arrangement density of the feed inlets 22 and the size of the openings. This ensures that after the elemental silicon falls onto the conical surface, it can slide evenly into the feed inlets 22 at each radial position. This avoids excessive accumulation of elemental silicon at the bottom of the top wall 21 due to excessively rapid sliding, or accumulation at the top of the cone due to excessively slow sliding. In some embodiments, the taper of the conical surface can be 5°, 6°, 7°, 8°, 9°, 10°, 11°, 12°, 13°, 14°, 15°, etc.
[0036] In some embodiments, the body 1 is made of metal. To prevent falling silicon elements from bouncing and impacting the body 1, a buffer layer 4 is provided on the inner wall of the body 1. The buffer layer 4 may be made of polyurethane.
[0037] The above description is only a preferred embodiment of this application. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of this disclosure / application, and these improvements and modifications should also be considered within the protection scope of this disclosure / application.
Claims
1. A high-purity elemental silicon processing device, characterized in that, include: The main body (1) has a screening chamber inside, a material inlet (11) connected to the screening chamber at the top of the main body (1), and a material outlet (12) connected to the screening chamber at the bottom of the main body (1). A redistribution member (2) is disposed in the screening chamber and separates the screening chamber. The material inlet (11) and the material outlet (12) are located on both sides of the redistribution member (2). The redistribution member (2) includes a top wall (21) on the side opposite to the material inlet (11). The top wall (21) is formed into at least a portion of a conical surface. A plurality of discharge ports (22) are provided on the top wall (21). The discharge ports (22) penetrate the redistribution member (2) in the direction of gravity. Screen (3), the screen (3) is disposed in the screening chamber and located between the redistribution member (2) and the material outlet (12), the screen (3) is used to screen element silicon.
2. The high-purity elemental silicon processing device according to claim 1, characterized in that, The top wall (21) is conical, and the multiple discharge ports (22) are arranged in an array. Multiple rings of discharge ports are distributed along the axial direction of the top wall (21). Each ring of discharge ports includes multiple discharge ports (22) that are circumferentially spaced along the top wall (21). The multiple rings of discharge ports are radially spaced along the conical shape.
3. The high-purity elemental silicon processing device according to claim 2, characterized in that, The cone-shaped cone apex has the discharge port (22).
4. The high-purity elemental silicon processing device according to claim 2, characterized in that, The taper of the conical surface is 5°-15°.
5. The high-purity elemental silicon processing apparatus according to claim 2, characterized in that, The material inlet (11), the material outlet (12), and the material outlet are coaxial with the conical surface.
6. The high-purity elemental silicon processing apparatus according to claim 1, characterized in that, The inner wall of the body (1) is provided with a buffer layer (4).
7. The high-purity elemental silicon processing apparatus according to claim 6, characterized in that, The buffer layer (4) is a polyurethane layer.
8. The high-purity elemental silicon processing apparatus according to claim 1, characterized in that, The redistribution component (2) is made of polyurethane material.
9. The high-purity elemental silicon processing apparatus according to claim 1, characterized in that, The screen (3) has multiple sieve holes (31) formed through it in the direction of gravity.
10. The high-purity elemental silicon processing apparatus according to claim 9, characterized in that, The discharge port (22) is a circular hole, and the diameter of the discharge port (22) is larger than the diameter of the sieve hole (31).