Semiconductor production apparatus and gas inlet structure
Patent Information
- Application Number
- CN202522194298.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-10-16
- Publication Date
- 2026-10-09
- Estimated Expiration
- 2035-10-16
AI Technical Summary
但是,在相关技术中,进气结构存在进气均匀性差、安装不便等技术缺陷,严重影响产品的良率
[0017]本实用新型还提供一种进气结构,用于半导体生产设备中,所述半导体生产设备包括反应器,所述反应器具有中轴线;所述进气结构包括至少两个进气管组,各所述进气管组被配置为能够在环绕所述中轴线的方向上等间隔地进行排布,各所述进气管组均包括至少两个进气管;同一所述进气管组中,至少存在两个所述进气管的长度不同。
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Figure CN224832841U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor manufacturing equipment technology, specifically to a semiconductor manufacturing equipment and an air intake structure. Background Technology
[0002] Semiconductor manufacturing equipment, such as equipment using Low Pressure Chemical Vapor Deposition (LPCVD) processes, typically incorporates an inlet structure to supply gas into the equipment through the furnace opening or tail during the production of intrinsic or doped polycrystalline silicon. However, in related technologies, this inlet structure suffers from technical drawbacks such as poor gas uniformity and inconvenient installation, severely impacting product yield.
[0003] Therefore, how to provide a solution to at least overcome or alleviate some of the aforementioned technical defects remains a technical problem that urgently needs to be solved by those skilled in the art. Utility Model Content
[0004] The purpose of this invention is to provide a semiconductor manufacturing equipment and an air intake structure. The air intake structure of the semiconductor manufacturing equipment has relatively good air intake uniformity, which can improve the product yield. The air intake structure can also be easily installed.
[0005] To solve the above-mentioned technical problems, this utility model provides a semiconductor manufacturing equipment, including a reactor and an air intake structure. The reactor has a central axis, and the air intake structure includes at least two air intake pipe groups. Each air intake pipe group is arranged at equal intervals in a direction surrounding the central axis, and each air intake pipe group includes at least two air intake pipes. In the same air intake pipe group, at least two air intake pipes have different lengths.
[0006] In this embodiment of the invention, the air intake structure includes at least two air intake pipe groups, each of which can extend into the reaction chamber to deliver process gas into the chamber. The air intake pipe groups are arranged at equal intervals in the direction surrounding the central axis. This arrangement of the air intake pipe groups better satisfies symmetry, allowing for relatively uniform air intake in the direction surrounding the central axis. This improves the flow field distribution within the reaction chamber, facilitating relatively sufficient and uniform contact between the process gas and the silicon wafer. Consequently, the film thickness and uniformity of the silicon wafer can reach relatively high standards, thereby improving product yield.
[0007] Furthermore, each air inlet assembly includes at least two air inlets, meaning that an air inlet assembly is an integration of multiple air inlets. Thus, installing one air inlet assembly effectively allows for the simultaneous installation of multiple air inlets, significantly improving installation convenience and efficiency. Simultaneously, it reduces the number of fixed structures required within the reactor, simplifying the reactor's internal structure and facilitating installation and subsequent maintenance.
[0008] For the same intake manifold assembly, at least two intake manifolds can have different lengths. In this way, the same intake manifold assembly can achieve air intake at different axial positions within the reaction chamber, so as to better achieve air replenishment to different regions within the reaction chamber along the axial direction.
[0009] Optionally, in the same intake manifold group, each intake manifold is interconnected.
[0010] Optionally, the reactor is provided with lifting rings for hoisting the air inlet pipe assembly.
[0011] Optionally, the ratio of the length to the outer diameter of the lifting ring is greater than or equal to 3.
[0012] Optionally, the intake structure further includes a manifold assembly, which includes at least two manifolds. The number of manifolds is consistent with the number of intake pipes in the intake pipe group, and the manifolds connect to the corresponding intake pipes in each intake pipe group.
[0013] Optionally, the air intake structure further includes an air supply pipe group, which includes at least two air supply pipes. The number of air supply pipes is consistent with the number of manifolds, and the air supply pipes are connected to the corresponding manifolds.
[0014] Optionally, the reactor is provided with a tail end plate, the tail end plate is provided with a connecting branch pipe and a sealing component, the air inlet pipe assembly is inserted into the reactor through the connecting branch pipe, and the sealing component can seal the air inlet pipe assembly and the connecting branch pipe.
[0015] Optionally, the sealing component includes a sealing end plate, a sealing clamp, and a sealing ring. The connecting branch pipe is provided with a connecting flange. The air intake pipe assembly passes through the sealing end plate. The sealing end plate is connected to the connecting flange through the sealing clamp. The sealing ring is disposed between the sealing end plate and the connecting flange.
[0016] Optionally, it also includes a temperature detection component that extends into the interior of the reactor through the tail end of the reactor.
[0017] This utility model also provides an air intake structure for use in a semiconductor manufacturing equipment, the semiconductor manufacturing equipment including a reactor having a central axis; the air intake structure includes at least two air intake pipe groups, each air intake pipe group being configured to be arranged at equal intervals in a direction surrounding the central axis, each air intake pipe group including at least two air intake pipes; in the same air intake pipe group, at least two of the air intake pipes have different lengths. Attached Figure Description
[0018] Figure 1 This is a simplified structural diagram of the semiconductor manufacturing equipment provided by this utility model;
[0019] Figure 2 This is a diagram showing the connection structure between the air intake structure and the furnace tail sealing plate.
[0020] Figure 3 This is a connection structure diagram of the intake manifold, connecting branch pipes, and sealing components.
[0021] Figure 4 This is a graph showing the uniformity of film thickness measured at different workstations in the semiconductor manufacturing equipment provided by this utility model.
[0022] Figure label:
[0023] 1000-Reactor; 1000A-Reaction Chamber; 1100-Furnace Body; 1200-Furnace Door; 1300-Furnace Tail Sealing Plate; 1400-Connecting Branch Pipe; 1410-Connecting Flange; 1500-Sealing Component; 1510-Sealing End Plate; 1520-Sealing Clamp; 1530-Sealing Ring; 1600-Temperature Detection Component; 1700-Lifting Ring;
[0024] 2000 - Furnace inlet air intake structure;
[0025] 3000 - Intake structure; 3100 - Intake manifold assembly; 3110 - Intake manifold; 3200 - Manifold assembly; 3210 - Manifold; 3300 - Air supply manifold assembly; 3310 - Air supply manifold. Detailed Implementation
[0026] To enable those skilled in the art to better understand the technical solution of this utility model, the present utility model will be further described in detail below with reference to the accompanying drawings and specific embodiments.
[0027] In the description of the embodiments of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation", "connection" and "linking" should be interpreted broadly. For example, "linking" can be a detachable connection or a non-detachable connection; it can be a direct connection or an indirect connection through an intermediate medium.
[0028] The directional terms mentioned in the embodiments of this utility model, such as "inner" and "outer", are only for reference to the direction of the accompanying drawings. Therefore, the directional terms used are for better and clearer explanation and understanding of the embodiments of this utility model, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this utility model.
[0029] In the description of embodiments of this utility model, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.
[0030] Please refer to Figures 1-3 , Figure 1 This is a simplified structural diagram of the semiconductor manufacturing equipment provided by this utility model; Figure 2 This is a diagram showing the connection structure between the air intake structure and the furnace tail sealing plate. Figure 3 This is a connection structure diagram of the intake manifold, connecting branch pipes, and sealing components.
[0031] This utility model provides a semiconductor manufacturing equipment, which may employ processes such as low-pressure chemical vapor deposition (LPCVD) or plasma-enhanced chemical vapor deposition (PECVD) to deposit films on the surface of substrates such as silicon wafers.
[0032] like Figure 1 As shown, the semiconductor manufacturing equipment includes a reactor 1000, a furnace inlet structure 2000, and an inlet structure 3000.
[0033] The reactor 1000 can be, for example, a tubular furnace, and may have a reaction chamber 1000A inside, which can be used to provide a reaction site for substrate processing. Specifically, the reactor 1000 may include a furnace body 1100, a furnace door 1200, and a furnace tail sealing plate 1300. The furnace body 1100 can be, for example, a quartz tube. The furnace door 1200 and the furnace tail sealing plate 1300 can be respectively disposed at both ends of the axial direction of the furnace body 1100. The furnace door 1200, the furnace tail sealing plate 1300, and the furnace body 1100 can enclose the aforementioned reaction chamber 1000A. The furnace door 1200 and the furnace tail sealing plate 1300 can both be installed on the furnace body 1100 by means of a certain sealing connection structure to ensure the sealing performance of the connection between the furnace door 1200 and the furnace body 1100, and the connection between the furnace tail sealing plate 1300 and the furnace body 1100. Here, the present invention does not limit the specific form of the sealing connection structure. In practical applications, those skilled in the art can refer to relevant technologies to determine the form, as long as it meets the requirements of use.
[0034] The reactor 1000 has a central axis P. In the embodiments of this application, the direction along the central axis P is the axial direction of the reactor 1000 and the reaction chamber 1000A, and the direction around the central axis P is the circumferential direction of the reactor 1000 and the reaction chamber 1000A.
[0035] Specifically, the furnace inlet air intake structure 2000 allows air to enter through the side of the reactor 1000 near the furnace door 1200. The specific structural form of the furnace inlet air intake structure 2000 is not limited here; in practical applications, those skilled in the art can determine its form by referring to relevant technologies, as long as it meets the requirements of use.
[0036] The air intake structure 3000 includes at least two air intake pipe groups 3100. Each air intake pipe group 3100 extends approximately along the central axis P and can extend into the reaction chamber 1000A to deliver process gas into the reaction chamber 1000A. Furthermore, the air intake pipe groups 3100 are equally spaced in the direction surrounding the central axis P (i.e., circumferentially). This arrangement of the air intake pipe groups 3100 better satisfies symmetry, allowing for relatively uniform air intake in the direction surrounding the central axis P. This improves the flow field distribution within the reaction chamber 1000A, facilitating relatively sufficient and uniform contact between the process gas and the silicon wafer. This results in a relatively high standard for silicon wafer film thickness and uniformity, thereby improving product yield.
[0037] In the implementation of the attached diagram, as follows: Figure 2As shown, the air intake structure 3000 may include two air intake pipe groups 3100. In this case, the two air intake pipe groups 3100 can be arranged in a horizontal direction, and the two air intake pipe groups 3100 can achieve symmetrical air intake on both sides in the horizontal direction. In addition, in some other implementations of this utility model embodiment, the number of air intake pipe groups 3100 can also be at least three, which is also feasible.
[0038] Each intake manifold assembly 3100 includes at least two intake manifolds 3110, meaning that the intake manifold assembly 3100 is an integration of multiple intake manifolds 3110. Thus, when installing one intake manifold assembly 3100, multiple intake manifolds 3110 can actually be installed simultaneously, which can greatly improve the convenience and efficiency of installation.
[0039] It is understood that if the air inlet pipes are arranged separately, installation and fixing structures need to be set at different locations within the reaction chamber to install each air inlet pipe. The number of installation and fixing structures is relatively large, and their locations are relatively dispersed. However, with the solution provided by this utility model embodiment, multiple air inlet pipes 3110 can be integrated into an air inlet pipe group 3100. During installation, only installation and fixing structures need to be configured for this air inlet pipe group 3100. The number of installation and fixing structures is relatively small, and their locations are relatively concentrated. This also simplifies the internal structure of the reactor 1000 and facilitates installation and subsequent maintenance.
[0040] For the same intake manifold group 3100, at least two intake manifolds 3110 can have different lengths. In this way, the same intake manifold group 3100 can achieve air intake at different axial positions within the reaction chamber 1000A, so as to better achieve air replenishment for different axial regions within the reaction chamber 1000A.
[0041] In the same intake manifold group 3100, the type and flow rate of the process gas in each intake manifold 3110 can be the same. Alternatively, in the same intake manifold group 3100, at least one of the type and flow rate of the process gas in each intake manifold 3110 can be different.
[0042] In some implementations, the intake pipes 3110 in the same intake pipe group 3100 can be connected to each other.
[0043] With this configuration, the intake pipes 3110 within the same intake pipe assembly 3100 can be combined to form a single unit, facilitating easier pipe installation within the assembly. Furthermore, the interconnected intake pipes 3110 result in a relatively high structural strength and rigidity for the assembly, extending the time during which each intake pipe 3110 remains undeformed. This, in turn, extends the equipment downtime maintenance cycle, enabling the equipment to operate relatively stably for a longer period, thereby improving both equipment utilization and production efficiency.
[0044] Here, the specific connection method of each intake pipe 3110 is not limited in this embodiment. In practical applications, those skilled in the art can choose according to specific needs, as long as it meets the requirements of use. For example, see [link to relevant documentation]. Figure 3 The intake pipes 3110 of the same intake pipe assembly 3100 can be fixed together by welding; for example, the intake pipes 3110 can be connected by intermittent welding. Alternatively, the intake pipes 3110 of the same intake pipe assembly 3100 can also be connected by other connection methods such as straps or retaining rings.
[0045] In some implementations, the intake structure 3000 may also include a manifold assembly 3200.
[0046] The manifold assembly 3200 may include at least two manifolds 3210. The number of manifolds 3210 is consistent with the number of intake pipes 3110 in the intake manifold assembly 3100, and the manifolds 3210 connect to the corresponding intake pipes 3110 in each intake manifold assembly 3100, so as to achieve unified air supply to the corresponding intake pipes 3110 in each intake manifold assembly 3100.
[0047] Accordingly, the air intake structure 3000 may also include an air supply pipe assembly 3300. The air supply pipe assembly 3300 includes at least two air supply pipes 3310, the number of which matches the number of manifolds 3210. Each air supply pipe 3310 is connected to a corresponding manifold 3210. The air supply pipes 3310 can be connected to an external air source to supply air to the manifolds 3210. The manifolds 3210 can then distribute the airflow to the corresponding air intake pipes 3110 in each air intake pipe assembly 3100. Thus, by configuring the manifold assembly 3200 and the air supply pipe assembly 3300, the number of pipes located outside the reactor 1000 in the air intake structure 3000 can be effectively reduced, simplifying the pipework structure and facilitating the connection between the air intake structure 3000 and the external air source.
[0048] It should be understood that, in addition to the above-mentioned implementation of manifold group 3200 and air supply group 3300, in some other implementations of this utility model, each air intake pipe 3110 in each air intake group 3100 can be supplied with air separately. In this case, the aforementioned manifold group 3200 is not required, which is also feasible.
[0049] In some implementations, such as Figure 2 As shown, the furnace tail sealing plate 1300 may be equipped with a connecting branch pipe 1400 and a sealing component 1500.
[0050] The connecting branch pipe 1400 can be located on the side of the furnace tail sealing plate 1300 away from the reaction chamber 1000A to reduce the space occupied inside the reaction chamber 1000A. The gas inlet pipe assembly 3100 can be inserted into the reactor 1000 via the connecting branch pipe 1400. The sealing member 1500 can seal the gas inlet pipe assembly 3100 and the connecting branch pipe 1400 to reduce the possibility of gas leakage between the gas inlet pipe assembly 3100 and the connecting branch pipe 1400.
[0051] In a specific solution, such as Figure 3 As shown, the sealing member 1500 may include a sealing end plate 1510, a sealing clamp 1520, and a sealing ring 1530.
[0052] The connecting branch pipe 1400 may be provided with a connecting flange 1410. Specifically, the connecting flange 1410 may be located on the radial outer side of the connecting branch pipe 1400, which can reduce the space occupied on the radial inner side of the connecting branch pipe 1400, thereby avoiding installation interference with the intake pipe assembly 3100.
[0053] The intake manifold assembly 3100 can be inserted into the sealing end plate 1510. The intake manifold assembly 3100 can be welded to the sealing end plate 1510 to simultaneously connect the intake manifold assembly 3100 and the sealing end plate 1510 and achieve a seal between them. Alternatively, the intake manifold assembly 3100 and the sealing end plate 1510 can also be sealed using interference fitting, sealing rings, or other methods. In short, any method that effectively achieves a reliable seal between the intake manifold assembly 3100 and the sealing end plate 1510 is acceptable.
[0054] The sealing end plate 1510 can be connected to the connecting flange 1410 via a sealing clamp 1520, making the connection and disassembly between the sealing end plate 1510 and the connecting flange 1410 relatively easy. Alternatively, the sealing end plate 1510 and the connecting flange 1410 can also be connected and fixed using other connection methods such as bolts.
[0055] The sealing ring 1530 can be, for example, a rubber ring. The sealing ring 1530 can be disposed between the sealing end plate 1510 and the connecting flange 1410 to achieve a seal between the sealing end plate 1510 and the connecting flange 1410.
[0056] It can be understood that each intake pipe group 3100 is arranged at equal intervals in the direction surrounding the central axis P. It can also be understood that each connecting branch pipe 1400 is arranged at equal intervals in the direction surrounding the central axis P, and the distance between the center line of each connecting branch pipe 1400 and the central axis P can be approximately the same.
[0057] In some implementations, the semiconductor manufacturing equipment provided in this embodiment of the present invention may further include a temperature detection component 1600.
[0058] The temperature detection component 1600 can be a thermocouple or the like. In specific installation, the temperature detection component 1600 can also extend into the interior of the reactor 1000 through the tail end (i.e., the furnace tail sealing plate 1300). The temperature detection component 1600 is used to detect the temperature inside the reactor 1000 in order to guide the implementation of the process.
[0059] The connection method between the temperature detection component 1600 and the furnace tail sealing plate 1300 can be the same as the connection method between the air inlet pipe assembly 3100 and the furnace tail sealing plate 1300, and will not be repeated here.
[0060] The number of temperature sensing components 1600 can be one or more, and this is not limited here.
[0061] In some implementations, a lifting ring 1700 may also be installed inside the reactor 1000.
[0062] The lifting ring 1700 is used to lift the air inlet pipe assembly 3100 and the temperature detection component 1600, and can limit the placement of the air inlet pipe assembly 3100 and the temperature detection component 1600 within the reactor 1000. At the same time, the lifting ring 1700 can also reliably support the air inlet pipe assembly 3100 and the temperature detection component 1600, reducing the possibility of damage such as bending or breakage to the air inlet pipe assembly 3100 and the temperature detection component 1600.
[0063] Here, the specific dimensions of the lifting ring 1700 are not limited in this embodiment. In practical applications, those skilled in the art can select according to specific needs, as long as the requirements of use are met.
[0064] In a specific design, the ratio of the length to the outer diameter of the lifting ring 1700 can be greater than or equal to 3. This allows for a relatively large size of the lifting ring 1700, facilitating its manufacturing. Furthermore, the lifting ring 1700 exhibits relatively good load-bearing capacity and reduces the number of rings required (generally, two to three are sufficient), facilitating its installation within the reaction chamber 1000A. During actual installation, for the same intake pipe assembly 3100 or the same temperature sensing component 1600, the various lifting rings 1700 used must meet certain concentricity requirements to avoid affecting the connection and support of the intake pipe assembly 3100 or the temperature sensing component 1600.
[0065] Please refer to Figure 4 , Figure 4 This is a graph showing the uniformity of film thickness measured at different workstations in the semiconductor manufacturing equipment provided by this utility model.
[0066] like Figure 4 As shown in the test, after adopting the air intake structure 3000 provided in the embodiment of this utility model, the uniformity of film thickness at different positions in the reaction chamber 1000A in the same batch of products can be less than or equal to 4%, and the product yield can be greatly improved.
[0067] The above are merely preferred embodiments of this utility model. It should be noted that, for those skilled in the art, several improvements and modifications can be made without departing from the principle of this utility model, and these improvements and modifications should also be considered within the scope of protection of this utility model.
Claims
1. A semiconductor manufacturing apparatus, characterized in that, The device includes a reactor and an air intake structure. The reactor has a central axis, and the air intake structure includes at least two air intake pipe groups. Each air intake pipe group is arranged at equal intervals in a direction surrounding the central axis, and each air intake pipe group includes at least two air intake pipes. In the same air intake pipe group, at least two air intake pipes have different lengths.
2. The semiconductor manufacturing equipment according to claim 1, characterized in that, In the same intake manifold group, the intake manifolds are interconnected.
3. The semiconductor manufacturing equipment according to claim 1, characterized in that, The reactor is equipped with lifting rings for hoisting the air inlet pipe assembly.
4. The semiconductor manufacturing equipment according to claim 3, characterized in that, The ratio of the length to the outer diameter of the lifting ring is greater than or equal to 3.
5. The semiconductor manufacturing equipment according to any one of claims 1-4, characterized in that, The intake structure further includes a manifold assembly, which includes at least two manifolds. The number of manifolds is consistent with the number of intake pipes in the intake pipe group. The manifolds connect to the corresponding intake pipes in each intake pipe group.
6. The semiconductor manufacturing equipment according to claim 5, characterized in that, The air intake structure also includes an air supply pipe group, which includes at least two air supply pipes. The number of air supply pipes is consistent with the number of manifolds, and the air supply pipes are connected to the corresponding manifolds.
7. The semiconductor manufacturing equipment according to any one of claims 1-4, characterized in that, The reactor is equipped with a tail end plate, which is provided with a connecting branch pipe and a sealing component. The air inlet pipe assembly is inserted into the reactor through the connecting branch pipe, and the sealing component can seal the air inlet pipe assembly and the connecting branch pipe.
8. The semiconductor manufacturing equipment according to claim 7, characterized in that, The sealing component includes a sealing end plate, a sealing clamp, and a sealing ring. The connecting branch pipe is provided with a connecting flange. The air intake pipe assembly passes through the sealing end plate. The sealing end plate is connected to the connecting flange through the sealing clamp. The sealing ring is disposed between the sealing end plate and the connecting flange.
9. The semiconductor manufacturing equipment according to any one of claims 1-4, characterized in that, It also includes a temperature detection component that extends into the interior of the reactor through the tail end of the reactor.
10. An air intake structure for use in a semiconductor manufacturing apparatus, the semiconductor manufacturing apparatus including a reactor having a central axis, characterized in that, The air intake structure includes at least two air intake pipe groups, each of which is configured to be arranged at equal intervals in a direction surrounding the central axis, and each air intake pipe group includes at least two air intake pipes; in the same air intake pipe group, at least two of the air intake pipes have different lengths.