Semiconductor growth apparatus

Abstract

The utility model provides a kind of semiconductor growth equipment, including light source module, preheating module, beam splitter module, front photoelectric detection module, controller and reaction cavity;Preheating module includes inductive heating device to heat light source module;Beam splitter module is used to the light received is split and transmission to emit first light beam, second light beam and third light beam;Front photoelectric detection module is located on the emergent light path of first light beam and second light beam, for outputting first detection signal and second detection signal according to the light information received;Controller is communicatively connected front photoelectric detection module and preheating module, to heat control preheating module according to first detection signal and second detection signal;Reaction cavity is provided with light channel for light beam to pass through and rear photoelectric detection module, and rear photoelectric detection module is located on the feedback light path of light channel and third light beam.The present application is favorable to reduce or avoid the influence of temperature drift on reflectivity measurement accuracy.

Description

Technical Field

[0001] This utility model relates to the field of reflectivity measurement technology, and in particular to a semiconductor growth device. Background Technology

[0002] Semiconductor growth equipment is used to grow semiconductor material layers. During the reaction process, process gases are introduced into the reaction chamber, where the reaction takes place on the substrate to generate the desired thin film material. In the process of controlling material growth in semiconductor growth equipment, the measurement and control system is one of the core components. It provides process quality detection and feedback control for the growth process and is a key device for material production quality control. Measuring reflectivity and temperature are common methods in optical measurement.

[0003] Taking reflectivity measurement as an example, the purpose of reflectivity measurement in semiconductor growth equipment is to calculate the change in the thickness of the grown thin film through the reflectivity curve. The principle is to continuously measure the periodic change in the overall reflectivity caused by multiple reflections and interferences of light of a certain wavelength between the layers of the grown thin film material, thereby calculating the thickness of the grown thin film. Since the detector cannot directly measure the reflectivity, it can only directly measure the reflected power (energy), and the reflectivity is calculated by the ratio of reflected energy to incident energy. Therefore, the measurement accuracy of this system is directly related to the stability of the light source's emission power.

[0004] Currently, semiconductor growth equipment typically uses high-power LED devices as the light source. However, the spectral power curve of LED devices often drifts with temperature, and this drift can significantly impact measurement accuracy in narrow-spectrum light source systems. Current reflectivity measurement systems for semiconductor growth equipment do not yet consider the temperature-dependent peak power drift of LED devices or semiconductor laser sources. This is primarily because semiconductor growth equipment is often required to operate in a constant-temperature environment, and the range of ambient temperature variation is controlled. While the temperature of a cleanroom is generally controlled, this control precision is set based on the overall environmental requirements of the semiconductor growth equipment, and may not meet the environmental temperature stability required by the reflectivity measurement system, thus affecting measurement accuracy. Utility Model Content

[0005] The purpose of this invention is to provide a semiconductor growth device that helps to reduce or avoid the impact of temperature drift on the accuracy of reflectivity measurement, thereby improving the accuracy of reflectivity measurement.

[0006] To achieve the above objectives, the semiconductor growth apparatus of this utility model includes a light source module, a preheating module, a beam splitting module, a pre-detector module, a controller, and a reaction chamber. The light source module emits test light. The preheating module includes an induction heating device to heat the light source module. The beam splitting module is located on the optical path of the test light emitted by the light source module and is used to split and transmit the received light to emit a first beam, a second beam, and a third beam. The pre-detector module is located on the output optical paths of the first beam and the second beam and is used to output a first detection signal and a second detection signal based on the received light information. The controller is communicatively connected to the pre-detector module and the preheating module to control the heating of the preheating module based on the first detection signal and the second detection signal. The reaction chamber has an optical channel for the beam to pass through and a post-detector module, and a base is provided inside. The substrate bearing surface of the optical channel and the base is on the optical path of the third beam, and the post-detector module is located on the feedback optical path of the optical channel and the third beam.

[0007] Preferably, the front-end photoelectric detection module includes a first photoelectric detection device and a second photoelectric detection device. The first photoelectric detection device is disposed on the outgoing optical path of the first beam and is used to receive the first beam and output the first detection signal after photoelectric conversion. The second photoelectric detection device is disposed on the outgoing optical path of the second beam and is used to receive the second beam and output the second detection signal after photoelectric conversion.

[0008] Preferably, the first photoelectric detection device includes a first filter, the center wavelength of which is configured to be less than the peak emission wavelength of the light source module at the target temperature; the second photoelectric detection device includes a second filter, the center wavelength of which is configured to be greater than the peak emission wavelength of the light source module at the target temperature.

[0009] Preferably, the maximum wavelength in the first light transmission bandwidth range of the first filter is less than the peak emission wavelength of the light source module at the target temperature, and the minimum wavelength in the second light transmission bandwidth range of the second filter is greater than the peak emission wavelength of the light source module at the target temperature.

[0010] Preferably, the difference between the peak emission wavelength of the light source module at the target temperature and the center wavelength of the first filter is equal to the difference between the center wavelength of the second filter and the peak emission wavelength of the light source module at the target temperature.

[0011] Preferably, the beam splitting module includes a focusing device, a first low-reflection device, and a second low-reflection device. The focusing device is disposed in the optical path of the test light emitted from the light source module to receive and converge the test light. The first low-reflection device is disposed in the optical path of the light emitted by the focusing device to reflect the light to form the first beam and transmit it to form a first transmitted beam, and controls the energy ratio of the first beam and the first transmitted beam to not exceed 1:9. The second low-reflection device is disposed in the optical path of the first transmitted beam to reflect the light to form the second beam and transmit it to form the third beam, and controls the energy ratio of the second beam and the third beam to not exceed 1:9.

[0012] Preferably, the beam splitting module includes a hollow device body and an incident light channel, a first optical feedback channel, a second optical feedback channel, and a third optical feedback channel respectively disposed on the four side walls of the device body; the focusing device is disposed within the incident light channel; the first optical feedback channel and the second optical feedback channel respectively penetrate the first and second opposite side walls of the device body and are staggered; the incident light channel and the third optical feedback channel respectively penetrate the third side wall adjacent to the first side wall and the fourth side wall adjacent to the second side wall of the device body and are arranged opposite to each other; the first low-reflection device is disposed within the device body and is inclined relative to the light-incident axis of the incident light channel and the first optical feedback channel; the second low-reflection device is disposed within the device body and is inclined relative to the light-incident axis of the second optical feedback channel and the third optical feedback channel.

[0013] Preferably, the semiconductor growth apparatus further includes a substrate, and the light source module is disposed on the top of the substrate; the preheating module further includes a thermally conductive insulating component, the induction heating device includes an induction heating component and a circuit loop composed of an induction coil and an alternating power supply, the thermally conductive insulating component is disposed on the bottom of the substrate, the circuit loop is disposed opposite to the bottom of the thermally conductive insulating component, and the induction heating component is disposed on the bottom surface of the thermally conductive insulating component and opposite to the circuit loop.

[0014] Preferably, the thermally conductive insulating component includes a thermally conductive insulating layer, a thermally conductive heat storage layer, and a thermally conductive outer shell, wherein the thermally conductive outer shell, the thermally conductive heat storage layer, and the thermally conductive insulating layer are sequentially fitted from the outside to the inside, and the induction heating component is disposed on the side of the thermally conductive insulating layer facing the circuit loop; the thermally conductive heat storage layer includes a thermally conductive skeleton and a heat storage medium filled within the thermally conductive skeleton.

[0015] Preferably, the circuit loop includes an on / off control device, and the semiconductor growth equipment further includes an over-temperature protection component and a drive control device. The drive control device is electrically connected to the output terminal of the controller and the input terminal of the on / off control device, and the on / off control device is connected in series with the circuit loop. The over-temperature protection component includes a control signal generation device, a software over-temperature protection circuit including a temperature sensor, and a hardware over-temperature protection circuit including a temperature switch. The input terminal of the control signal generation device is electrically connected to the output terminal of the controller and the output terminal of the hardware over-temperature protection circuit. The output terminal of the control signal generation device is electrically connected to the drive control device, and the software over-temperature protection circuit is electrically connected to the input terminal of the controller. The temperature sensor and the temperature switch are located between the induction heating device and the light source module.

[0016] Preferably, the software over-temperature protection circuit further includes a first voltage divider resistor, the temperature sensor and the first voltage divider resistor are connected in series, and the input terminal of the controller is electrically connected between the temperature sensor and the first voltage divider resistor.

[0017] Preferably, the hardware over-temperature protection circuit further includes a second voltage divider resistor and a hysteresis comparator, wherein the second voltage divider resistor and the temperature switch are connected in series, and the hysteresis comparator is electrically connected between the second voltage divider resistor and the temperature switch.

[0018] The beneficial effects of the semiconductor growth apparatus of this invention are as follows: (1) This application adds a preheating module, a beam splitting module, a pre-photoelectric detection module and a controller to the light source module to control the temperature of the light source module, thereby avoiding the decrease in the overall radiation power amplitude caused by the temperature drift of the light source module and the energy loss caused by the right shift of the radiation spectrum, which leads to the reflectivity error. This solves the problem of the peak emission power of the light source module drifting with temperature, which helps to reduce or avoid the impact of temperature drift on the reflectivity measurement accuracy and improves the measurement accuracy of the reflectivity of the substrate in the semiconductor growth equipment.

[0019] (2) This application eliminates the method of using a temperature sensor to detect the current working temperature of the light source module. Instead of relying on temperature for control, it uses the first detection signal and the second detection signal output by the light information of the first beam and the second beam in the test light as feedback parameters to achieve heating control of the preheating module and realize real-time control of the temperature of the light source module. This is more accurate than temperature control by a temperature sensor and is beneficial to improving the accuracy of reflectivity measurement.

[0020] (3) This application uses a single induction heating device to generate heat, which is then transferred to the light source module to heat the light source module. Compared with the traditional method of using both heating and cooling to control temperature, the temperature control of the light source module in this application is simpler and less expensive. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of the structure of the semiconductor growth apparatus according to an embodiment of the present invention. Figure 1 .

[0022] Figure 2 This is a schematic diagram of the structure of the semiconductor growth apparatus according to an embodiment of the present invention. Figure 2 .

[0023] Figure 3 This is a schematic diagram of the structure of the light source module and the preheating module in the semiconductor growth equipment of this utility model embodiment.

[0024] Figure 4 This is a schematic diagram of the beam splitting module in the semiconductor growth equipment according to an embodiment of the present invention.

[0025] Figure 5 This is a schematic diagram showing the relationship between the light transmission bandwidth of the first and second filters and the emission wavelength of the light source module at the target temperature in the semiconductor growth apparatus of this utility model embodiment.

[0026] Figure 6 This is a schematic diagram showing the relationship between the normalized emission power of the light source module and the casing temperature in the semiconductor growth equipment of this utility model embodiment.

[0027] Figure 7 This is a schematic diagram showing the circuit connections of the software over-temperature protection circuit and the hardware over-temperature protection circuit in the semiconductor growth equipment of this utility model embodiment.

[0028] Figure 8 This is a schematic diagram of the beam path of the semiconductor growth apparatus according to an embodiment of the present invention.

[0029] Explanation of reference numerals in the attached figures: 1. Light source module; 2. Preheating module; 21. Induction heating element; 22. Alternating power supply; 23. Induction coil; 24. Thermally conductive insulating element; 3. Beam splitting module; 301. First beam; 302. Second beam; 303. Third beam; 31. Focusing device; 32. First low-reflection device; 33. Second low-reflection device; 34. Device body; 35. Incident light channel; 36. First optical feedback channel; 37. Second optical feedback channel; 38. Third optical feedback channel; 41. First filter; 411. First optical bandwidth; 42. First photodetector; 43. Second filter; 431. 44. Second optical bandwidth; 45. Second photodetector; 46. Controller; 47. First plano-convex lens; 58. Second plano-convex lens; 59. Rear photodetector module; 50. Third photodetector; 51. Third filter; 62. Temperature sensor; 63. Temperature switch; 64. Hysteresis comparator; 65. Drive control device; 66. Control signal generation device; 67. First voltage divider resistor; 68. Second voltage divider resistor; 69. Software over-temperature protection circuit; 602. Hardware over-temperature protection circuit; 7. Substrate; 100. Reaction chamber; 110. Substrate; 120. Base; 130. Window. Detailed Implementation

[0030] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions in the embodiments of this utility model will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art to which this utility model pertains. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but does not exclude other elements or objects.

[0031] To overcome the problems existing in the prior art, this utility model provides a semiconductor growth apparatus that helps to reduce or avoid the impact of temperature drift on the accuracy of reflectivity measurement, thereby improving the accuracy of reflectivity measurement.

[0032] In some embodiments of this utility model, reference is made to Figures 1 to 4 , Figure 8The semiconductor growth equipment includes a light source module 1, a preheating module 2, a beam splitting module 3, a pre-detector module (not shown in the figure), a controller 45, and a reaction chamber 100. The light source module 1 is used to emit test light. The preheating module 2 includes an induction heating device to heat the light source module 1. The beam splitting module 3 is located on the optical path of the test light emitted from the light source module 1 and is used to split and transmit the received light to emit a first beam 301, a second beam 302, and a third beam 303. The pre-detector module (not shown in the figure) is located on the output optical paths of the first beam 301 and the second beam 302 and is used to output a first detection signal and a second detection signal based on the received light information. The controller 45 is communicatively connected to the front photoelectric detection module (not shown in the figure) and the preheating module 2 to control the heating of the preheating module 2 according to the first detection signal and the second detection signal; the reaction chamber 100 is provided with an optical channel for the light beam to pass through and a rear photoelectric detection module, and a base 120 is provided inside. The optical channel and the substrate bearing surface of the base 120 are on the optical path of the third light beam 303, so that the third light beam 303 reaches the substrate bearing surface through the optical channel; the rear photoelectric detection module 5 is located outside the reaction chamber 100, on the feedback optical path of the optical channel and the third light beam 303, to receive and perform optical testing according to the feedback light information of the third light beam 303.

[0033] The relationship between the emission power of light source module 1 and ambient temperature is as follows: It is generally assumed that the peak emission wavelength of light source module 1 is based on room temperature. As the casing temperature of light source module 1 increases, the peak emission power of light source module 1 decreases, and the overall spectrum shifts to the right (e.g., ...). Figure 6 (As shown). During measurement, to ensure the uniformity of light wavelength and obtain a stable phase difference, a filter is added to the front end of the photodetector to select specific wavelengths of light. Therefore, the reflectivity error caused by temperature increase consists of two parts: first, a decrease in the overall radiated power, and second, energy loss due to the rightward shift of the radiation spectrum. Generally, as the temperature shift increases, the second type of loss increases rapidly and non-linearly, becoming the main component of the measurement error.

[0034] This application adds a preheating module 2, a beam splitting module 3, a pre-photoelectric detection module, and a controller 45 to the light source module 1 to control its temperature. This ensures that the light source module 1 maintains a constant temperature or a narrow temperature range when emitting the incident light required for measurement, thus guaranteeing the stability of the output measurement beam wavelength range. This avoids the overall radiation power amplitude decrease caused by temperature drift of the light source module 1, as well as the energy loss caused by the rightward shift of the radiation spectrum, which leads to reflectivity errors. It solves the problem of peak emission power drift of the light source module 1 with temperature, making it easier to reduce or avoid the impact of temperature drift on reflectivity measurement accuracy and improving the accuracy of reflectivity measurement. Moreover, this application eliminates the method of using a temperature sensor to detect the current operating temperature of the light source module 1, and no longer relies on temperature for control. Instead, it uses the first and second detection signals output from the light information of the first beam 301 and the second beam 302 in the test light as feedback parameters to achieve heating control of the preheating module 2, thereby achieving real-time temperature control of the light source module 1. This is more accurate than temperature sensor control and helps improve the reflectivity measurement accuracy.

[0035] Furthermore, compared to existing technologies that use alternating cooling and heating methods to control the temperature of the light source module 1 in semiconductor growth equipment between 20ºC and 28ºC, resulting in high system complexity, this application uses a single induction heating device to generate heat, which is then transferred to the light source module 1 to heat it. Compared to the traditional method of simultaneously using both heating and cooling for temperature control, the temperature control of the light source module 1 in this application is simpler and less costly.

[0036] In some embodiments of this utility model, reference is made to Figure 1 The pre-mounted photoelectric detection module includes a first photoelectric detection device and a second photoelectric detection device. The first photoelectric detection device is disposed on the outgoing optical path of the first beam 301, and is used to receive the first beam 301 and output the first detection signal after photoelectric conversion. The second photoelectric detection device is disposed on the outgoing optical path of the second beam 302, and is used to receive the second beam 302 and output the second detection signal after photoelectric conversion. This allows the preheating module to be heated and controlled in real time by using the first and second detection signals output from the light information of the first and second beams in the test light as feedback parameters. This is more accurate than temperature control by a temperature sensor and helps improve the accuracy of reflectivity measurement.

[0037] In some embodiments of this utility model, reference is made to Figure 1The first photoelectric detection device includes a first filter 41, the center wavelength of which is configured to be less than the peak emission wavelength of the light source module 1 at the target temperature; the second photoelectric detection device includes a second filter 43, the center wavelength of which is configured to be greater than the peak emission wavelength of the light source module 1 at the target temperature. This allows for a wider range of target temperature variations that the light source module 1 can adapt to.

[0038] In some specific embodiments of this invention, the target temperature is higher than the ambient temperature of the light source module 1. By making the outer shell temperature of the light source module 1, i.e., the target temperature when emitting the measurement beam, higher than the ambient temperature of the light source module 1, it is made unaffected by the external ambient temperature, reducing the dependence of the light source module 1 on room temperature, improving the stability of the measurement, and enabling this measurement system to be suitable for reflectivity measurement in a wider range of room temperature environments.

[0039] In this embodiment, specifically, refer to Figure 5 Taking the peak emission wavelength of the light source module 1 at the target temperature as 940nm as an example, the center wavelength of the first filter 41 is smaller than the peak emission wavelength of the light source module 1 at the target temperature, that is, the first light transmission bandwidth 411 of the first filter 41 is located to the left of 940nm. For example, the center wavelength of the first filter 41 can be selected as 920nm. The center wavelength of the second filter 43 is larger than the peak emission wavelength of the light source module 1 at the target temperature, that is, the second light transmission bandwidth 431 of the second filter 43 is located to the right of 940nm. For example, the center wavelength of the second filter 43 can be selected as 970nm.

[0040] When the current operating temperature of the light source module 1, i.e., the shell temperature, is lower than the set target temperature of 25°C, the emission spectrum of the light source module 1 shifts to the left. The light signal, i.e., the light intensity, passing through the first filter 41 increases, and the corresponding first detection signal, i.e., the voltage signal, converted by the first photodetector 42 also increases. The light signal passing through the second filter 43 changes in the opposite way. The controller 45 can determine that the current operating temperature of the light source module 1 is lower than the target temperature based on the changes in the first and second detection signals. The controller 45 automatically calculates the required control quantity based on the difference between the first detection signal and the predetermined value, and transmits the signal to the alternating power supply 22. The alternating power supply 22 then outputs the corresponding power to control the heating temperature of the induction heating element 21, thereby heating the light source module 1 to the target temperature.

[0041] When the current operating temperature of the light source module 1, i.e., the shell temperature, is higher than the set target temperature of 25°C, the emission spectrum of the light source module 1 shifts to the right. The light signal, i.e., the light intensity, passing through the first filter 41 decreases, and correspondingly, the first detection signal, i.e., the voltage signal, converted by the first photodetector 42 also decreases. The light signal passing through the second filter 43 changes in the opposite way. Based on the changes in the first and second detection signals, the controller 45 can determine that the current operating temperature of the light source module 1 is higher than the target temperature. The controller 45 will turn off the switch of the alternating power supply 22 to cut off the power supply circuit between the alternating power supply 22 and the induction coil 23, causing the induction heating element 21 to stop heating. There is a temperature difference between the light source module 1 and the room temperature. Through heat exchange with the ambient temperature, the light source module 1 passively cools down until the set target temperature of 25°C is reached. This process repeats to achieve a relatively stable temperature for the light source module 1, so that constant temperature control of the light source module 1 can be achieved using only the single induction heating element 21.

[0042] In some embodiments of this utility model, reference is made to Figure 2 and Figure 3 The first photoelectric detection device further includes a first photodetector 42, with the first filter 41 located in front of the first photodetector 42. The first photodetector 42 is used to receive the first light beam 301 and output a first detection signal after photoelectric conversion. The second photoelectric detection device further includes a second photodetector 44, with the second filter 43 located in front of the second photodetector 44. The second photodetector 44 is used to receive the second light beam 302 and output a second detection signal after photoelectric conversion.

[0043] In some embodiments of this utility model, reference is made to Figure 2 and Figure 3 The induction heating device includes an induction heating element 21 and a circuit loop consisting of an induction coil 23 and an alternating power supply 22. In this application, the alternating power supply 22 is connected to the induction coil 23 to provide alternating current to the induction coil 23. The alternating current flowing through the induction coil 23 generates an alternating magnetic field through the induction heating element 21. This magnetic field generates eddy currents within the induction heating element 21, thereby heating the induction heating element 21. Induction heating improves heating speed and efficiency, allowing the light source module 1 to reach the target temperature within seconds. Furthermore, the unique non-contact heating method extends the lifespan of the entire heating system. By adjusting the frequency, power, and heating time, precise temperature control within 0.1℃ can be achieved to meet diverse needs. Simultaneously, induction heating eliminates the need for the induction heating element 21 to contact the induction coil 23 structure, facilitating assembly.

[0044] In some embodiments of this invention, the controller 45 includes a PWM generator. Specifically, the voltage signals output by the first photodetector 42 and the second photodetector 44 are sent to the controller 45. The controller 45 compares the received voltage signal with a predetermined value. This difference can accurately track the change in the main wavelength of the light source module 1 (i.e., the direction and amount of shift in the emission spectrum of the light source module 1). The controller 45 automatically calculates the required control quantity based on the above difference and sends a PWM control signal to the alternating power supply 22 according to a preset program. The alternating power supply 22 then outputs corresponding power, thereby adjusting the temperature of the induction heating element 21 to achieve real-time temperature control of the light source module 1, thus heating the light source module 1 to the target temperature. Specifically, the controller 45 controlling the output power of the alternating power supply 22 to adjust the heating temperature of the induction heating element 21 is a conventional technique in the art and will not be elaborated further here. Under conditions of slow change in ambient temperature, this device can achieve a control accuracy within 0.1ºC.

[0045] In some embodiments of this utility model, the induction heating element 21 is a stainless steel heating workpiece.

[0046] In some embodiments of this utility model, reference is made to Figure 2 , Figure 8 The rear photoelectric detection module 5 includes a third photoelectric detector 51 and a third filter 52 located in front of the third photoelectric detector 51. The third photoelectric detector 51 is used to receive and perform optical testing based on the feedback light information of the third beam.

[0047] In some embodiments of this utility model, reference is made to Figure 8 The substrate 110 is supported on the substrate bearing surface of the base 120 of the reaction chamber 100. The third photodetector 51 is used to receive the reflected light of the third beam reflected by the surface of the substrate 110 and obtain the reflectivity. This helps to reduce or avoid the influence of temperature drift on the reflectivity measurement accuracy and improves the measurement accuracy of the reflectivity of the substrate in the semiconductor growth equipment.

[0048] In some embodiments of this utility model, reference is made to Figure 1The third light beam 303 enters the surface of the substrate 110 inside the reaction cavity 100 through the window 130. The substrate 110 is placed on the base 120 inside the reaction cavity 100. The light beam is reflected by the surface of the substrate 110, and the reflected light passes through the window 130 of the reaction cavity 100 and then through the third filter 52. Finally, the light signal of a specific wavelength band after passing through the third filter 52 is detected by the third photodetector 51. The third photodetector 51 calculates the reflectivity based on the ratio of the reflected energy of the reflected light to the incident energy of the incident light. The specific photodetector detecting the reflected light and obtaining the reflectivity is a conventional technique in the art and will not be described in detail here. The filter is used to allow specific wavelengths to pass through, which greatly suppresses strong background thermal radiation interference and ensures that the photodetector measures the true reflected signal.

[0049] In some embodiments of this utility model, reference is made to Figure 1 , Figure 2 and Figure 4 The beam splitting module 3 includes a focusing device 31, a first low-reflection device 32, and a second low-reflection device 33. The focusing device 31 is disposed in the optical path of the test light emitted from the light source module 1 to receive and focus the test light. The first low-reflection device 32 is disposed in the optical path of the light emitted from the focusing device 31 to reflect the light to form the first beam 301 and to transmit the light to form the first transmitted beam, and to control the energy ratio of the first beam 301 and the first transmitted beam to not exceed 1:9. The second low-reflection device 33 is disposed in the optical path of the first transmitted beam to reflect the light to form the second beam 302 and to transmit the light to form the third beam 303, and to control the energy ratio of the second beam 302 and the third beam 303 to not exceed 1:9. The beam splitting module 3 can split the incident light emitted by the light source module 1 into multiple paths. One beam, namely the third beam 303, is used for reflectivity measurement, and the other two beams, namely the first beam 301 and the second beam 302, are used to achieve stable control of the operating temperature of the light source module 1. This allows the application to no longer rely on temperature for control, but to directly use the beam as the detection and comparison object, which is more accurate than temperature control by temperature sensor and helps to improve the measurement accuracy of reflectivity.

[0050] In this embodiment, the ratio of the energy of the reflected light to the energy of the transmitted light in both the first low-reflection device 32 and the second low-reflection device 33 is less than or equal to 1:9. A ratio of 1:9 means that the energy of the reflected light accounts for 10% of the total incident light energy, and the energy of the transmitted light accounts for 90% of the total incident light energy. This ensures that 1 / 10 of the light reaching the first low-reflection device 32 is reflected by the first low-reflection device 32, and 9 / 10 of the light is transmitted by the first low-reflection device 32. Similarly, 1 / 10 of the light reaching the second low-reflection device 33 is reflected by the second low-reflection device 33, and 9 / 10 of the light is transmitted by the second low-reflection device 33. This avoids excessive use of the first beam 301 and the second beam 302 for feedback, which could affect the reflectivity measurement using the third beam 303.

[0051] In this embodiment, reference Figure 1 The light emitted by the light source module 1 is focused by the focusing device 31 and reaches the first low-reflection device 32. The first beam 301, which is partially reflected by the first low-reflection device 32, passes through the first filter 41 and is detected by the first photodetector 42. The remaining part is transmitted by the first low-reflection device 32 to the second low-reflection device 33. The second beam 302, which is partially reflected by the second low-reflection device 33, passes through the second filter 43 and is detected by the second photodetector 44. The remaining part of the transmitted light, which is the third beam 303, is transmitted to the reaction chamber for reflectivity measurement.

[0052] In some specific embodiments of this utility model, reference is made to Figure 1 , Figure 2 and Figure 4 The focusing device 31 is a plano-convex lens, and the convex surface of the plano-convex lens is disposed facing the first low-reflection device 32. The first photodetector 42 is located in the reflected light path of the first low-reflection device 32 to receive the first light beam 301 reflected by the first low-reflection device 32. The second low-reflection device 33 is located in the transmitted light path of the first low-reflection device 32. The second photodetector 44 is located in the reflected light path of the second low-reflection device 33 to receive the second light beam 302 reflected by the second low-reflection device 33. The object under test is located in the transmitted light path of the second low-reflection device 33 to reflect the third light beam 303 transmitted by the second low-reflection device 33.

[0053] In some embodiments of this utility model, reference is made to Figure 4The beam splitting module 3 includes a hollow device body 34 and incident light channels 35, a first optical feedback channel 36, a second optical feedback channel 37, and a third optical feedback channel 38 respectively disposed on the four side walls of the device body 34; the focusing device 31 is disposed within the incident light channel 35; the first optical feedback channel 36 and the second optical feedback channel 37 respectively penetrate the opposite first and second side walls of the device body 34 and are staggered; the incident light channel 35 penetrates the device body 34 adjacent to the first side wall. The third sidewall of the device body 34 has a third optical feedback channel 38 that penetrates the fourth sidewall of the device body 34 adjacent to the second sidewall, and the incident light channel 35 and the third optical feedback channel 38 are arranged opposite to each other; the first low-reflection device 32 is disposed in the device body 34 and is inclined relative to the light-incident axis of the incident light channel 35 and the first optical feedback channel 36; the second low-reflection device 33 is disposed in the device body 34 and is inclined relative to the light-incident axis of the second optical feedback channel 37 and the third optical feedback channel 38.

[0054] In this embodiment, the first optical feedback channel 36 is located on the reflected optical path of the first low-reflection device 32, the second optical feedback channel 37 is located on the reflected optical path of the second low-reflection device 33, and the third optical feedback channel 38 is located on the transmitted optical path of the second low-reflection device 33. The first beam 301 passes through the first optical feedback channel 36 and then reaches the first filter 41 via the optical path; the second beam 302 passes through the second optical feedback channel 37 and then reaches the second filter 43 via the optical path; and the third beam 303 passes through the third optical feedback channel 38 and then reaches the reaction chamber via the optical path. The beam splitting module has a reasonable and compact structure, which helps to reduce the volume occupied by the beam splitting module 3.

[0055] In some embodiments of this utility model, reference is made to Figure 4 The first low-reflection device 32 and the second low-reflection device 33 are spaced apart within the receiving cavity of the device body 34 and are arranged in a figure-eight shape.

[0056] In some embodiments of this utility model, reference is made to Figure 1 and Figure 2 The first beam 301 and the second beam 302 fed back by the beam splitting module 3 are respectively transmitted to the first photoelectric detection device and the second photoelectric detection device through Y-shaped optical fiber.

[0057] In some embodiments of this utility model, the first photoelectric detection device is connected to the first optical feedback channel 36; the second photoelectric detection device is connected to the second optical feedback channel 37.

[0058] In some embodiments of this utility model, the third optical feedback channel 38 is located above the cavity where the object under test is located and is positioned opposite to the object under test.

[0059] In some embodiments of this utility model, reference is made to Figure 1 The first photoelectric detection device further includes a first plano-convex lens 46, which is disposed between the first photoelectric detector 42 and the first filter 41, with the convex surface of the first plano-convex lens 46 facing the first filter 41.

[0060] In some embodiments of this utility model, reference is made to Figure 1 The second photoelectric detection device further includes a second plano-convex lens 47, which is disposed between the second photoelectric detector 44 and the second filter 43, with the convex surface of the second plano-convex lens 47 facing the second filter 43.

[0061] In some embodiments of this utility model, the center wavelength of the third filter 52 is adapted to the emission wavelength of the light source module 1 at the target temperature. This corrects the center frequency of the traditionally designed detection filter based on the peak standard of room temperature 25ºC and adapts to the target temperature set by the light source module 1. This is beneficial to improving the accuracy and detection efficiency of the reflected light detected by the third photodetector 51 and improving the signal-to-noise ratio of the measuring device.

[0062] In this embodiment, as the current operating temperature of the light source module 1, i.e., the casing temperature, increases, the peak emission power of the light source module 1 decreases, and the overall spectrum shifts to the right (e.g., Figure 6 As shown), in order to make the light source module 1 unaffected by the external ambient temperature, this application reduces the dependence of the light source module 1 on room temperature, or sets the shell temperature of the light source module 1 during operation, i.e., the target temperature, to be higher than the ambient temperature where the light source module 1 is located. Therefore, the center wavelength of the third filter 52 is adapted to the emission wavelength of the light source module 1 at the target temperature, so as to ensure the accuracy of the reflected light detected by the third photodetector 51.

[0063] In some embodiments of this invention, the center wavelength of the third filter 52 is consistent with the emission wavelength of the light source module 1 at the target temperature, which helps to improve the accuracy of the reflected light detected by the third photodetector 51.

[0064] In some embodiments of this utility model, the difference between the peak value of the emission wavelength of the light source module 1 at the target temperature and the center wavelength of the first filter 41 is equal to the difference between the center wavelength of the second filter 43 and the peak value of the emission wavelength of the light source module 1 at the target temperature, thereby making the target temperature variation range of the light source module 1 more adaptable.

[0065] In some embodiments of this utility model, reference is made to Figure 5 The maximum wavelength within the first light-transmitting bandwidth 411 of the first filter 41 is less than the peak emission wavelength of the light source module 1 at the target temperature, and the minimum wavelength within the second light-transmitting bandwidth 431 of the second filter 43 is greater than the peak emission wavelength of the light source module 1 at the target temperature. Furthermore, the first light-transmitting bandwidth 411 of the first filter 41 is equal to the second light-transmitting bandwidth 431 of the second filter 43, making the adaptable target temperature variation range of the light source module 1 larger. That is, the first light-transmitting bandwidth 411 of the first filter 41 and the second light-transmitting bandwidth 431 of the second filter 43 are symmetrically arranged with the peak emission wavelength of the light source module 1 at the target temperature as the center line.

[0066] In some embodiments of this invention, the third filter 52 is a narrowband filter. Specifically, the bandwidth of the third filter 52 is set according to parameters such as the target temperature of the light source module 1. If the bandwidth of the bandpass filter is too wide, it is easy to introduce more noise and affect the measurement accuracy. Under high-temperature measurement, the intensity of thermal radiation is high enough to limit the bandwidth of the third filter 52 to a suitable narrow range, which can ensure that the emitted effective light signal is sufficient and minimize or avoid the influence of noise. If the operating wavelength range of the photodetector is too narrow, it is not easy to fully utilize the effective signal transmitted by the third filter 52, thereby affecting the measurement accuracy.

[0067] In some embodiments of this utility model, the light source module 1 includes an LED lamp or a semiconductor laser.

[0068] In some embodiments of this utility model, reference is made to Figure 2 and Figure 3 The semiconductor growth apparatus further includes a substrate 7, and the light source module 1 is disposed on top of the substrate 7. The heat generated by the induction heating element 21 is transferred to the light source module 1 through the substrate 7, and the light source module 1 can also dissipate heat through the substrate 7 when it is passively cooled. The substrate 7 performs both heat transfer and heat dissipation functions.

[0069] In some embodiments of this utility model, the substrate 7 is a circuit board, and the controller 45 and other circuits are disposed on the circuit board and electrically connected.

[0070] In some embodiments of this utility model, reference is made to Figures 2 to 3The preheating module 2 further includes a thermally conductive insulating component 24, which is disposed at the bottom of the substrate 7. The circuit loop is disposed opposite to the bottom of the thermally conductive insulating component 24, and the induction heating component 21 is disposed on the bottom surface of the thermally conductive insulating component 24 and opposite to the circuit loop. That is, the induction heating component 21 is disposed on the side of the thermally conductive insulating component 24 away from the substrate 7, which is beneficial to improving the heating effect and heat transfer efficiency of the preheating module 2 on the light source module 1 and reducing heat loss.

[0071] In some embodiments of this invention, the light source module 1 is located within the orthographic projection structure of the thermally conductive insulating member 24 on the substrate 7. That is, the preheating module 2 is located directly below the light source module 1, which improves the heating effect and heat transfer efficiency of the preheating module 2 on the light source module 1 and reduces heat loss.

[0072] In some embodiments of this utility model, the thermally conductive insulating component 24 includes a thermally conductive insulating layer, a thermally conductive heat storage layer, and a thermally conductive outer shell. The thermally conductive outer shell, the thermally conductive heat storage layer, and the thermally conductive insulating layer are sequentially arranged from the outside to the inside. The induction heating component 21 is disposed on the side of the thermally conductive insulating layer facing the circuit loop. The heat generated by the induction heating component 21 is transferred to the light source module 1 in sequence through the thermally conductive insulating layer, the thermally conductive heat storage layer, the thermally conductive outer shell, and the substrate 7.

[0073] In this embodiment, the thermally conductive insulating layer is used to efficiently transfer heat while maintaining electrical insulation. The thermally conductive and heat-storing layer has high thermal conductivity and high heat storage capacity, meaning it can quickly transfer the heat generated by the induction heating element 21 to the light source module 1, and can also absorb and store a large amount of heat, releasing it slowly when needed. The thermally conductive and heat-storing layer helps solve the time-space mismatch problem of the heat generated by the induction heating element 21, achieving temperature smoothing, thermal management, and energy recovery. For example, when the power of the induction heating element 21 is greater than the heat dissipation power or there is excess heat, the layer absorbs and stores the excess heat, preventing a sharp rise in the temperature of the light source module 1. When the power of the induction heating element 21 decreases or the heat is insufficient, the layer releases the stored heat, preventing a sharp drop in the temperature of the light source module 1. The thermally conductive outer shell provides support for the preheating module 2 and provides a rapid heat conduction path. This application helps ensure the efficient transfer of heat generated by the induction heating element 21 to the light source module 1, thereby improving the heating effect and heat transfer efficiency of the preheating module 2 on the light source module 1 and reducing heat loss.

[0074] In some embodiments of this invention, the thermally conductive and heat-storing layer includes a thermally conductive framework and a heat-storing medium filled within the framework. The heat-storing medium includes a phase change material, paraffin wax, or fatty acid. The thermally conductive framework provides a rapid heat conduction path, i.e., quickly transferring heat in and out, while the phase change material or heat-storing medium provides a high heat storage capacity, i.e., absorbing and releasing heat.

[0075] In some embodiments of this utility model, the thermally conductive skeleton is made of metal or high thermal conductivity non-metallic material. The metal can be aluminum or copper foam or fin structure, and the high thermal conductivity non-metal can be graphene, carbon nanotubes, expanded graphite, aluminum nitride (AlN), etc.

[0076] In some embodiments of this invention, the bottom of the thermally conductive outer shell, the bottom of the thermally conductive heat storage layer, and the bottom of the thermally conductive insulating layer all include receiving grooves. Further, the thermally conductive outer shell, the thermally conductive heat storage layer, and the thermally conductive insulating layer are all rectangular structures with receiving grooves, wherein the thermally conductive heat storage layer is disposed within the receiving groove of the thermally conductive outer shell, and the thermally conductive insulating layer is disposed within the receiving groove of the thermally conductive heat storage layer.

[0077] In some embodiments of this utility model, the thermally conductive shell is made of metal or a high thermal conductivity non-metallic material; the metal can be aluminum or copper, and the high thermal conductivity non-metal can be graphene, carbon nanotubes, expanded graphite, aluminum nitride (AlN), etc.

[0078] In some embodiments of this utility model, the thermally conductive insulating layer includes a thermally conductive silicone tube, a thermally conductive ceramic tube, a polymer composite tube, or a high thermal conductivity tube, etc.; the thermally conductive silicone tube is made of thermally conductive silicone, the thermally conductive ceramic tube is made of thermally conductive ceramic, the polymer composite tube is made of materials such as polyimide, and the high thermal conductivity tube is made of materials such as alumina ceramic or aluminum nitride ceramic.

[0079] In some embodiments of this invention, thermally conductive adhesive is provided between the thermally conductive insulating layer and the thermally conductive heat storage layer, and between the thermally conductive heat storage layer and the thermally conductive outer shell. This facilitates the efficient transfer of heat generated by the induction heating element 21 to the light source module 1, thereby improving the heating effect and heat transfer efficiency of the preheating module 2 on the light source module 1 and reducing heat loss.

[0080] In some embodiments of this utility model, reference is made to Figure 7The circuit loop includes an on / off control device (not shown in the figure), and the semiconductor growth equipment also includes a drive control device 64 and an over-temperature protection component. The drive control device 64 is electrically connected to the output terminal of the controller 45 and the input terminal of the on / off control device (not shown in the figure), and the on / off control device is connected in series with the circuit loop. The over-temperature protection component includes a control signal generation device 65, a software over-temperature protection circuit 601 including a temperature sensor 61, and a hardware over-temperature protection circuit 602 including a temperature switch 62. The input terminal of the control signal generation device 65 is electrically connected to the output terminal of the controller 45 and the output terminal of the hardware over-temperature protection circuit 602. The output terminal of the control signal generation device 65 is electrically connected to the drive control device 64, and the software over-temperature protection circuit 601 is electrically connected to the input terminal of the controller 45. The temperature sensor 61 and the temperature switch 62 are located between the induction heating device and the light source module 1.

[0081] In this embodiment, the temperature sensor 61 is used to collect the current operating temperature of the light source module 1. The controller 45 is connected to the temperature sensor 61 and is used to acquire the current operating temperature. After determining that the current operating temperature exceeds the preset temperature threshold, the controller 45 outputs a corresponding control signal to the control signal generation device 65, causing the control signal generation device 65 to output a low-level signal. This causes the drive control device 64 to respond and control the on / off control device to disconnect, thereby cutting off the circuit loop between the alternating power supply 22 and the induction coil 23. The response speed is fast, and the preset temperature threshold can be flexibly set according to actual application requirements and ambient temperature. This effectively prevents the preheating module 2 from experiencing large currents that could damage the device, and provides soft over-temperature protection for the preheating module 2.

[0082] In this embodiment, the temperature switch 62 is an independent, passive mechanical or shape memory alloy switch (e.g., a normally closed thermal protector). The temperature switch 62 can be selected to use the desired preset temperature threshold. The temperature switch 62 is connected to the control signal generation device 65, the drive control device 64, the on / off control device, and the circuit loop. That is, the temperature switch 62 and the circuit loop are connected to form a hardware over-temperature protection circuit, enabling it to function without relying on software, power supply, or controller 45, even if the main control system completely crashes, ensuring high safety. Furthermore, the structure is simple; detection and execution can be completed simultaneously with a single temperature switch 62, resulting in low cost and high reliability.

[0083] In this embodiment, a dual over-temperature protection system is formed, comprising a software over-temperature protection circuit 601 and a hardware over-temperature protection circuit 602. The software over-temperature protection circuit 601 is responsible for handling rapid and minor temperature rise anomalies, while the hardware layer is responsible for severe and uncontrolled overheating faults, ensuring full coverage from abnormal to dangerous conditions. Through the redundant design of the software over-temperature protection circuit 601 and the hardware over-temperature protection circuit 602, high reliability is achieved. Even if the software over-temperature protection circuit 601 or the controller of the heating control circuit fails, the hardware over-temperature protection circuit can still provide safety protection.

[0084] The temperature sensor of the software over-temperature protection circuit and the temperature switch of the hardware over-temperature protection circuit in this application are both located between the induction heating device and the light source module, which can ensure the accuracy of temperature judgment by the software over-temperature protection circuit and the hardware over-temperature protection circuit.

[0085] In some embodiments of this utility model, the temperature sensor 61 is disposed within the preheating module 2 and close to the induction heating element 21, so as to accurately monitor whether the induction heating element 21 is overheated and prevent the temperature sensor 61 from responding late due to uneven heat conduction between the preheating module 2 and the substrate 7.

[0086] In some other embodiments of this invention, the temperature sensor 61 is disposed on the substrate 7 and close to the light source module 1, which is beneficial for accurately collecting the current operating temperature of the light source module 1.

[0087] In some embodiments of this utility model, the temperature switch 62 includes a temperature sensing part and a switching part. The temperature sensing part is in contact with the preheating module 2 or the substrate 7. The switching part, i.e., the contact, consists of two electrical terminals (pins or leads) sealed in a housing. The temperature switch 62 is connected to the circuit loop. Specifically, the live wire of the main power supply circuit is first led to one electrical terminal of the temperature switch 62, and then a wire is led from the other electrical terminal of the temperature switch 62 to the circuit loop. This ensures that all current flowing to the alternating power supply 22 must flow through the internal contact of the temperature switch 62. When the temperature exceeds a preset temperature threshold, the contact opens, and the entire circuit is cut off. The temperature switch 62 does not rely on any electronic signals or programs. Regardless of the state of the controller 45, as long as the temperature at the location of the temperature switch 62 reaches or exceeds its preset temperature threshold, the temperature switch 62 will automatically and forcibly disconnect the circuit connected in series with it using purely physical principles such as bimetallic strip deformation and shape memory alloy contraction. This disconnection is fundamental. Even if the controller 45 crashes or the software has a bug, it can ensure that the circuit loop between the alternating power supply 22 and the induction coil 23 is de-energized.

[0088] In some embodiments of this utility model, reference is made to Figure 7The software over-temperature protection circuit 601 further includes a first voltage divider resistor 66. The temperature sensor 61 and the first voltage divider resistor 66 are connected in series. The input terminal of the controller 45 is electrically connected between the temperature sensor 61 and the first voltage divider resistor 66, which helps to improve the temperature measurement accuracy.

[0089] In some embodiments of this utility model, reference is made to Figure 7 The hardware over-temperature protection circuit 602 further includes a second voltage divider resistor 67 and a hysteresis comparator 63. The second voltage divider resistor 67 and the temperature switch 62 are connected in series, and the hysteresis comparator 63 is electrically connected between the second voltage divider resistor 67 and the temperature switch 62, which helps to improve the accuracy of temperature measurement. The hysteresis comparator 63 effectively prevents system oscillation, improves stability, and avoids the vicious cycle of "protection-cooling-restart-reprotection" at the critical temperature point of the preheating module 2. It eliminates the "jitter" phenomenon, which is beneficial for improving the protection of the preheating module 2 and the entire power system, and can greatly extend the equipment lifespan. The hysteresis comparator 63 forces the temperature control system to undergo a sufficient cooling process before restarting, ensuring that the root cause of the overheating fault (such as poor heat dissipation) has been eliminated, rather than just a temporary decrease in surface temperature, thus improving safety. Furthermore, the hysteresis comparator 63 upgrades a passive, automatically reset hardware over-temperature protection circuit into an intelligent over-temperature protection system with "memory" and "judgment" capabilities, reducing the burden on the controller 45. The controller 45 does not need to use complex software algorithms to determine when it is safe to restart; it only needs to follow the explicit instructions given by the hysteresis comparator 63, simplifying software design and improving response reliability. The specific structure and working principle of the hysteresis comparator 63 are common knowledge in the art and will not be elaborated here.

[0090] In this embodiment, the hysteresis comparator 63 sets upper and lower thresholds to ensure that once protection is triggered, the temperature must drop to a sufficiently low level before resetting, preventing the controller 45 from repeatedly triggering protection, which could lead to system instability or even damage to the equipment. Specifically, the hysteresis comparator 63 monitors the state (on or off) of the temperature switch 62 and treats it as a digital signal. When the temperature switch 62 disconnects due to overheating, the system enters a protection state. At this time, even if the temperature of the preheating module 2 or the substrate 7 drops, causing the temperature switch 62 to automatically reset and close, the hysteresis comparator 63 will not immediately output a "heating allowed" signal. Only when the temperature drops sufficiently and stably to a "safe temperature" far below its operating point (i.e., crossing the entire hysteresis window of the hysteresis comparator 63) will the hysteresis comparator 63 change its output state, notifying the controller 45 that "danger has been eliminated." The controller 45 will only reconnect the power supply circuit between the alternating power supply and the induction coil after receiving a "safe" signal from the hysteresis comparator 63.

[0091] In some embodiments of this utility model, the temperature switch 62 is a temperature-sensitive switch.

[0092] In some embodiments of this invention, the on / off control device is a MOS transistor.

[0093] In some embodiments of this utility model, the control signal generating device 65 is an AND gate.

[0094] In some embodiments of this utility model, the temperature sensor 61 and the temperature switch 62 are fixedly mounted on the heat-conducting shell of the preheating module 2 or on the part of the substrate 7 near the light source module 1 by thermally conductive adhesive, fixing clamps or screws, that is, the surface is tightly attached, which is simple and convenient to install.

[0095] In some other embodiments of this utility model, the preheating module 2 or the substrate 7 has a slot near the light source module 1, and the temperature sensor 61 and the temperature switch 62 are inserted into the slot. That is, the temperature sensor 61 and the temperature switch 62 are installed in an embedded manner to ensure the best heat conduction effect.

[0096] In some embodiments of this invention, the temperature control component further includes a power amplifier circuit integrated in the controller 45 and connected to the temperature sensor 61 and the temperature switch 62. This amplifies the power of the electrical signals from the temperature sensor 61 and the temperature switch 62 without distortion, thereby improving the accuracy of temperature information acquisition.

[0097] Although the embodiments of this utility model have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of this utility model as described in the claims. Moreover, the utility model described herein may have other embodiments and can be implemented or realized in various ways.

Claims

1. A semiconductor growth apparatus, characterized in that, include: The light source module is used to emit test light; The preheating module includes an induction heating device for heating the light source module; The beam splitting module is located in the optical path of the test light emitted by the light source module, and is used to split and transmit the received light to emit a first beam, a second beam, and a third beam. A front-mounted photoelectric detection module is disposed on the outgoing optical path of the first beam and the second beam, and is used to output a first detection signal and a second detection signal according to the received optical information; The controller is communicatively connected to the front-end photoelectric detection module and the preheating module to control the heating of the preheating module according to the first detection signal and the second detection signal; The reaction chamber is provided with an optical channel for the light beam to pass through and a rear photoelectric detection module. A base is provided inside. The substrate bearing surface of the optical channel and the base is on the optical path of the third light beam. The rear photoelectric detection module is located on the feedback optical path of the optical channel and the third light beam.

2. The semiconductor growth apparatus according to claim 1, characterized in that, The front-end photoelectric detection module includes: A first photoelectric detection device is disposed on the outgoing optical path of the first beam, and is used to receive the first beam and output the first detection signal after photoelectric conversion; The second photoelectric detection device is located on the output optical path of the second beam and is used to receive the second beam and output the second detection signal after photoelectric conversion.

3. The semiconductor growth apparatus according to claim 2, characterized in that: The first photoelectric detection device includes a first filter, the center wavelength of which is configured to be less than the peak emission wavelength of the light source module at the target temperature; The second photoelectric detection device includes a second filter, the center wavelength of which is configured to be greater than the peak emission wavelength of the light source module at the target temperature.

4. The semiconductor growth apparatus according to claim 3, characterized in that: The maximum wavelength in the first light-transmitting bandwidth of the first filter is less than the peak emission wavelength of the light source module at the target temperature, and the minimum wavelength in the second light-transmitting bandwidth of the second filter is greater than the peak emission wavelength of the light source module at the target temperature, and / or: The difference between the peak emission wavelength of the light source module at the target temperature and the center wavelength of the first filter is equal to the difference between the center wavelength of the second filter and the peak emission wavelength of the light source module at the target temperature.

5. The semiconductor growth apparatus according to claim 1, characterized in that, The beam splitting module includes: A focusing device is provided in the optical path of the test light emitted from the light source module to receive and focus the test light; A first low-reflection device is disposed in the optical path of the light emitted by the focusing device to reflect the light to form the first beam and to transmit the light to form the first transmitted beam, and to control the energy ratio of the first beam and the first transmitted beam to not exceed 1:

9. A second low-reflection device is disposed in the optical path of the first transmitted beam to reflect and form the second beam, and to transmit and form the third beam, and to control the energy ratio of the second beam and the third beam to not exceed 1:

9.

6. The semiconductor growth apparatus according to claim 5, characterized in that, The beam splitting module includes a hollow device body and an incident light channel, a first light feedback channel, a second light feedback channel and a third light feedback channel respectively disposed on the four side walls of the device body; The focusing device is disposed within the incident light channel; The first optical feedback channel and the second optical feedback channel respectively penetrate the first and second sidewalls opposite to each other of the device body and are arranged in a staggered manner; The incident light channel and the third light feedback channel respectively penetrate the third sidewall adjacent to the first sidewall and the fourth sidewall adjacent to the second sidewall of the device body, and are arranged opposite to each other. The first low-reflection device is disposed within the device body and is inclined relative to the light-incident axis of the incident light channel and the first light feedback channel; The second low-reflection device is disposed within the device body and is inclined relative to the light-inlet axis of the second optical feedback channel and the third optical feedback channel.

7. The semiconductor growth apparatus according to claim 1, characterized in that, It also includes a substrate, with the light source module disposed on the top of the substrate; The preheating module also includes a thermally conductive insulating component. The induction heating device includes an induction heating component and a circuit circuit consisting of an induction coil and an alternating power supply. The thermally conductive insulating component is disposed at the bottom of the substrate. The circuit circuit is disposed opposite to the bottom of the thermally conductive insulating component. The induction heating component is disposed on the bottom surface of the thermally conductive insulating component and is opposite to the circuit circuit.

8. The semiconductor growth apparatus according to claim 7, characterized in that, The thermally conductive insulating component includes a thermally conductive insulating layer, a thermally conductive heat storage layer, and a thermally conductive outer shell. The thermally conductive outer shell, the thermally conductive heat storage layer, and the thermally conductive insulating layer are sequentially fitted from the outside to the inside. The induction heating component is disposed on the side of the thermally conductive insulating layer facing the circuit loop. The thermally conductive heat storage layer includes a thermally conductive frame and a heat storage medium filled within the thermally conductive frame.

9. The semiconductor growth apparatus according to claim 7, characterized in that, The circuit loop includes an on / off control device; The semiconductor growth equipment also includes an over-temperature protection component and a drive control device. The drive control device is electrically connected to the output terminal of the controller and the input terminal of the on / off control device. The on / off control device is connected in series with the circuit loop. The over-temperature protection component includes a control signal generation device, a software over-temperature protection circuit including a temperature sensor, and a hardware over-temperature protection circuit including a temperature switch. The input terminal of the control signal generation device is electrically connected to the output terminal of the controller and the output terminal of the hardware over-temperature protection circuit. The output terminal of the control signal generation device is electrically connected to the drive control device, and the software over-temperature protection circuit is electrically connected to the input terminal of the controller. The temperature sensor and the temperature switch are located between the induction heating device and the light source module.

10. The semiconductor growth apparatus according to claim 9, characterized in that, The software over-temperature protection circuit also includes a first voltage divider resistor, the temperature sensor and the first voltage divider resistor are connected in series, and the input terminal of the controller is electrically connected between the temperature sensor and the first voltage divider resistor. The hardware over-temperature protection circuit also includes a second voltage divider resistor and a hysteresis comparator. The second voltage divider resistor and the temperature switch are connected in series, and the hysteresis comparator is electrically connected between the second voltage divider resistor and the temperature switch.

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