A sampling device for dephosphorization of high-phosphorus silicon-manganese alloy

Abstract

The utility model discloses a kind of sampling devices for high phosphorus silicon manganese alloy reduction dephosphorization, specifically related to high phosphorus silicon manganese alloy reduction technical field, including support frame, high phosphorus silicon manganese alloy reduction dephosphorization sampling processing device is set in the upper and lower ends of the support frame, the high phosphorus silicon manganese alloy reduction dephosphorization sampling processing device includes: sampling assembly and high phosphorus silicon manganese alloy reduction component.The utility model is through a kind of sampling devices for high phosphorus silicon manganese alloy reduction dephosphorization, compared with prior art, the first sampling pipeline and the second sampling pipeline are different in length and position inside high phosphorus silicon manganese alloy reduction dephosphorization reactor body, different height and position inside high phosphorus silicon manganese alloy reduction dephosphorization reactor body can be extracted respectively, greatly improve the extraction efficiency and convenience of entire device, and the device can be supplemented inside gas after extraction by the gas processor set in upper end, further improve the entire device processing extraction convenience.

Description

Technical Field

[0001] This utility model relates to the field of high-phosphorus silicon-manganese alloy reduction technology, and more specifically, to a sampling device for dephosphorization of high-phosphorus silicon-manganese alloy reduction. Background Technology

[0002] The reduction dephosphorization process of high-phosphorus silicon-manganese alloys is usually carried out at high temperatures (such as around 1400℃). During the dephosphorization process, the melt needs to be stirred regularly to promote the dephosphorization reaction. The sampling device can be equipped with an automated stirring system, stirring every 5 to 10 minutes.

[0003] Currently, many sampling devices cannot sample different locations in the reactor during the sampling process, resulting in incomplete experimental data and low sampling flexibility. Utility Model Content

[0004] In order to overcome the above-mentioned defects of the prior art, the present invention provides a sampling device for the reduction and dephosphorization of high phosphorus silicon-manganese alloy, so as to solve the problems mentioned in the background art.

[0005] To achieve the above objectives, the present invention provides the following technical solution: a sampling device for dephosphorization of high-phosphorus silicon-manganese alloy, comprising a support frame, wherein a high-phosphorus silicon-manganese alloy dephosphorization sampling and processing device is provided at both ends of the support frame, the high-phosphorus silicon-manganese alloy dephosphorization sampling and processing device comprising: a sampling component and a high-phosphorus silicon-manganese alloy reduction component, wherein the sampling component is disposed at the lower end of the support frame.

[0006] In a preferred embodiment, the high-phosphorus silicon-manganese alloy reduction assembly includes: a reduction treatment chamber, a high-phosphorus silicon-manganese alloy reduction dephosphorization reactor body, a discharge pipe, a collector, a feeder, an exhaust pipe, and a positioning frame. The positioning frame is disposed on the inner wall of the reduction treatment chamber, and the lower end of the high-phosphorus silicon-manganese alloy reduction dephosphorization reactor body is mounted on the upper end of the positioning frame.

[0007] In a preferred embodiment, the sampling assembly includes: a first sampling pipe, a second sampling pipe, a first sampling collector, a second sampling collector, a gas transmitter, a gas processor, a sealing mounting joint, a drive motor, and a stirrer. The lower end of the stirrer is mounted on the output end of the drive motor, and the lower end of the drive motor is mounted on the inner side of the lower end of the reduction treatment chamber. A positioning bracket is mounted on the side of the sealing mounting joint.

[0008] In a preferred embodiment, the upper end of the discharge pipe of the high-phosphorus silicon-manganese alloy reduction dephosphorization reactor body is installed at the lower end, and the lower end of the discharge pipe is installed at the upper end of the collector.

[0009] In a preferred embodiment, the lower end of the discharge pipe is installed on the upper end of the high-phosphorus silicon-manganese alloy reduction dephosphorization reactor body, the upper end of the discharge pipe is installed on the lower end of the feeder, and the lower end of the feeder is connected to the upper and lower ends inside the support frame.

[0010] In a preferred embodiment, the lower end of the gas transmitter is installed inside the upper part of the high-phosphorus silicon-manganese alloy reduction dephosphorization reactor body, and the upper end of the gas transmitter is installed at the lower end of the gas processor.

[0011] In a preferred embodiment, the lower ends of the first sampling pipe and the second sampling pipe are installed through the upper and lower ends of the sealed installation joint inside the body of the high-phosphorus silicon-manganese alloy reduction dephosphorization reactor. The length of the first sampling pipe is greater than the length of the second sampling pipe. The other end of the second sampling pipe is installed on the upper end of the second sampling collector, and the other end of the first sampling pipe is installed on the upper end of the first sampling collector.

[0012] The technical effects and advantages of this utility model are as follows:

[0013] A sampling device for the reduction and dephosphorization of high-phosphorus silicon-manganese alloy is disclosed. Compared with the prior art, the first and second sampling pipes have different lengths and positions inside the high-phosphorus silicon-manganese alloy reduction and dephosphorization reactor body. This allows for extraction at different heights and positions inside the reactor body, greatly improving the extraction efficiency and convenience of the entire device. Furthermore, after extraction, the internal gas can be replenished by a gas processor installed at the upper end, further enhancing the ease of processing and extraction. Attached Figure Description

[0014] Figure 1 This is a schematic diagram of the overall structure of this utility model.

[0015] Figure 2 This is a schematic diagram of the high-phosphorus silicon-manganese alloy reduction dephosphorization sampling and treatment device of this utility model.

[0016] Figure 3 This is a schematic diagram of the high-phosphorus silicon-manganese alloy reduction component of this utility model.

[0017] Figure 4 This is a schematic diagram of the sampling component structure of this utility model.

[0018] The attached figures are labeled as follows: 1. Support frame; 2. High-phosphorus silicon-manganese alloy reduction dephosphorization sampling and processing device; 21. High-phosphorus silicon-manganese alloy reduction component; 211. Feeder; 212. Discharge pipe; 213. Reduction processing chamber; 214. Collector; 215. Discharge pipe; 216. High-phosphorus silicon-manganese alloy reduction dephosphorization reactor body; 217. Positioning frame; 22. Sampling component; 221. Sealing installation joint; 222. Positioning bracket; 223. First sampling pipe; 224. First sampling collector; 225. Second sampling pipe; 226. Second sampling collector; 227. Gas transmitter; 228. Gas processor; 229. Stirrer; 220. Drive motor. Detailed Implementation

[0019] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0020] As attached Figure 1-4 As shown, this utility model provides a sampling device for high phosphorus silicon-manganese alloy reduction dephosphorization, including a support frame 1. The support frame 1 is provided with a high phosphorus silicon-manganese alloy reduction dephosphorization sampling and processing device 2 at both ends. The high phosphorus silicon-manganese alloy reduction dephosphorization sampling and processing device 2 includes a sampling component 22 and a high phosphorus silicon-manganese alloy reduction component 21. The sampling component 22 is located at the lower end of the support frame 1.

[0021] The high-phosphorus silicon-manganese alloy reduction assembly 21 includes: a reduction treatment chamber 213, a high-phosphorus silicon-manganese alloy reduction dephosphorization reactor body 216, a discharge pipe 215, a collector 214, a feeder 211, an exhaust pipe 212, and a positioning frame 217. The positioning frame 217 is located on the inner wall of the reduction treatment chamber 213. The lower end of the high-phosphorus silicon-manganese alloy reduction dephosphorization reactor body 216 is installed on the upper end of the positioning frame 217. The upper end of the discharge pipe 215 of the high-phosphorus silicon-manganese alloy reduction dephosphorization reactor body 216 is installed on the lower end. The lower end of the discharge pipe 215 is installed on the upper end of the collector 214. The lower end of the exhaust pipe 212 is installed on the upper end of the high-phosphorus silicon-manganese alloy reduction dephosphorization reactor body 216. The upper end of the exhaust pipe 212 is installed on the lower end of the feeder 211. The lower end of the feeder 211 is connected to the upper and lower ends inside the support frame 1.

[0022] Sampling assembly 22 includes: a first sampling pipe 223, a second sampling pipe 225, a first sampling collector 224, a second sampling collector 226, a gas transmitter 227, a gas processor 228, a sealing mounting joint 221, a drive motor 220, and a stirrer 229. The lower end of the stirrer 229 is mounted on the output end of the drive motor 220, and the lower end of the drive motor 220 is mounted on the inner side of the lower end of the reduction treatment chamber 213. A positioning bracket 222 is mounted on the side of the sealing mounting joint 221, and the lower end of the gas transmitter 227 is mounted on the high-phosphorus silicon-manganese alloy reducing agent. Inside the original dephosphorization reactor body 216, the upper end of the gas transmitter 227 is installed at the lower end of the gas processor 228. The lower ends of the first sampling pipe 223 and the second sampling pipe 225 are installed through the sealing installation joint 221. The upper and lower ends are installed inside the high phosphorus silicon manganese alloy reduction dephosphorization reactor body 216. The length of the first sampling pipe 223 is greater than the length of the second sampling pipe 225. The other end of the second sampling pipe 225 is installed at the upper end of the second sampling collector 226, and the other end of the first sampling pipe 223 is installed at the upper end of the first sampling collector 224.

[0023] The specific implementation method is as follows: When using this utility model, after the drive motor 220 is started, it drives the stirrer 229 installed at the output end to perform mixing and stirring. After the reaction separation is completed inside the high-phosphorus silicon-manganese alloy reduction dephosphorization reactor body 216, the first sampling pipe 223 and the second sampling pipe 225 set inside can be started to extract the sample. After the first sampling pipe 223 and the second sampling pipe 225 complete the extraction, the sample can be collected into the first sampling collector 224 and the second sampling collector 226 respectively. The first sampling pipe 223 and the second sampling pipe 225 have different lengths and positions inside the high-phosphorus silicon-manganese alloy reduction dephosphorization reactor body 216, which can extract the sample at different heights and positions inside the high-phosphorus silicon-manganese alloy reduction dephosphorization reactor body 216, greatly improving the extraction efficiency and convenience of the entire device. After extraction, the gas processor 228 set at the upper end can be used to replenish the internal gas, further improving the processing and extraction convenience of the entire device.

[0024] The working principle of this utility model is as follows: When using this utility model, after the drive motor 220 is started, it drives the stirrer 229 installed at the output end to perform mixing and stirring. After the reaction separation is completed inside the high-phosphorus silicon-manganese alloy reduction dephosphorization reactor body 216, the first sampling pipe 223 and the second sampling pipe 225 set inside can be activated to perform extraction. After the first sampling pipe 223 and the second sampling pipe 225 complete the extraction, they can be collected into the first sampling collector 224 and the second sampling collector 226 respectively. The first sampling pipe 223 and the second sampling pipe 225 have different lengths and positions inside the high-phosphorus silicon-manganese alloy reduction dephosphorization reactor body 216, which can extract at different heights and positions inside the high-phosphorus silicon-manganese alloy reduction dephosphorization reactor body 216, greatly improving the extraction efficiency and convenience of the entire device.

[0025] Finally, the following points should be noted: First, in the description of this application, it should be noted that, unless otherwise specified and limited, the terms "installation", "connection", and "linkage" should be interpreted broadly, and can be mechanical or electrical connections, or internal connections between two components, or direct connections. "Up", "down", "left", "right", etc. are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may change.

[0026] Secondly: The accompanying drawings of the embodiments disclosed in this utility model only involve the structures involved in the embodiments disclosed in this utility model. Other structures can refer to the general design. In the absence of conflict, the same embodiment and different embodiments of this utility model can be combined with each other.

[0027] Finally: The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A sampling device for dephosphorization of high-phosphorus silicon-manganese alloy, comprising a support frame (1), characterized in that: The support frame (1) is equipped with a high-phosphorus silicon-manganese alloy reduction dephosphorization sampling and treatment device (2) at both the upper and lower ends. The high-phosphorus silicon-manganese alloy reduction dephosphorization sampling and processing device (2) includes: a sampling component (22) and a high-phosphorus silicon-manganese alloy reduction component (21). The sampling component (22) is located at the lower end of the support frame (1). The high-phosphorus silicon-manganese alloy reduction component (21) includes: a reduction processing chamber (213), a high-phosphorus silicon-manganese alloy reduction dephosphorization reactor body (216), a discharge pipe (215), a collector (214), a feeder (211), a discharge pipe (212), and a positioning frame (217). The side of the positioning frame (217) is located on the inner wall of the reduction processing chamber (213). The lower end of the high-phosphorus silicon-manganese alloy reduction dephosphorization reactor body (216) is installed on the upper end of the positioning frame (217). The sampling component (22) includes: a first sampling pipe (223), a second sampling pipe (225), a first sampling collector (224), a second sampling collector (226), and a gas transmitter ( 227), gas processor (228), sealing installation joint (221), drive motor (220) and stirrer (229). The lower end of the stirrer (229) is installed at the output end of the drive motor (220). The lower end of the drive motor (220) is installed inside the lower end of the reduction treatment chamber (213). A positioning bracket (222) is installed on the side of the sealing installation joint (221). The lower ends of the first sampling pipe (223) and the second sampling pipe (225) are installed through the sealing installation joint (221). Both ends are installed inside the body (216) of the high phosphorus silicon manganese alloy reduction dephosphorization reactor. The length of the first sampling pipe (223) is greater than the length of the second sampling pipe (225). The other end of the second sampling pipe (225) is installed on the upper end of the second sampling collector (226). The other end of the first sampling pipe (223) is installed on the upper end of the first sampling collector (224).

2. The sampling device for reduction dephosphorization of high-phosphorus silicon-manganese alloy according to claim 1, characterized in that: The upper end of the discharge pipe (215) of the high-phosphorus silicon-manganese alloy reduction dephosphorization reactor body (216) is installed at the lower end, and the lower end of the discharge pipe (215) is installed at the upper end of the collector (214).

3. The sampling device for reduction dephosphorization of high-phosphorus silicon-manganese alloy according to claim 1, characterized in that: The lower end of the discharge pipe (212) is installed on the upper end of the high phosphorus silicon manganese alloy reduction dephosphorization reactor body (216), the upper end of the discharge pipe (212) is installed on the lower end of the feeder (211), and the lower end of the feeder (211) is connected to the upper and lower ends inside the support frame (1).

4. The sampling device for reduction dephosphorization of high-phosphorus silicon-manganese alloy according to claim 2, characterized in that: The lower end of the gas transmitter (227) is installed inside the upper end of the high-phosphorus silicon-manganese alloy reduction dephosphorization reactor body (216), and the upper end of the gas transmitter (227) is installed at the lower end of the gas processor (228).

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