Device packaging and electronic devices
Patent Information
- Application Number
- CN202522216067.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Priority Date
- 2024-11-13
- Filing Date
- 2025-10-20
- Publication Date
- 2026-10-09
- Estimated Expiration
- 2035-10-20
Smart Images
Figure CN224840585U_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to a device package and electronic device. Background Technology
[0002] Device packages (e.g., semiconductor die packages) may include one or more integrated circuit (IC) dies bonded to a package substrate. Examples of IC dies include system-on-chip (SoC) IC dies, dynamic random access memory (DRAM) IC dies, logic IC dies, photonic IC dies (e.g., semiconductor photonic devices), and / or high bandwidth memory (HBM) IC dies, and other examples. Interposers can be used to redistribute contact areas from the IC die to a larger area of the interposer. Interposers can enable three-dimensional (3D) packaging and / or other advanced semiconductor packaging technologies.
[0003] Semiconductor packages may include one or more semiconductor die packages bonded to a package substrate. The semiconductor die packages may be electrically interconnected via one or more redistribution structures on the package substrate. This allows semiconductor packages to include semiconductor die packages providing different functionalities, such as memory, processing, communication, and / or input / output (I / O), and other examples. Utility Model Content
[0004] Some embodiments described herein include device packages. The device package includes a package substrate and an optical connector package within the package substrate. The optical connector package includes a dielectric structure and a first optical fiber within the dielectric structure. The device package further includes an integrated circuit die attached to the package substrate, wherein a grating coupler is adjacent to the end of the first optical fiber.
[0005] Some embodiments described herein include device packages. The device package includes a package substrate and an optical connector package within the package substrate. The optical connector package includes a dielectric structure and an optical fiber within the dielectric structure, wherein the end of the optical fiber faces the top of the package substrate. The device package further includes an integrated circuit die attached to the package substrate, wherein a grating coupler is adjacent to the end of the optical fiber.
[0006] Some embodiments described herein include electronic devices. The electronic devices include a device substrate and a device package attached to the device substrate. The device substrate includes a first optical connector package, the first optical connector package including a first dielectric structure and a first segment of an optical fiber in the first dielectric structure. The device package includes a package substrate and a second optical connector package within the package substrate. The second optical connector package includes a second dielectric structure and a second segment of an optical fiber in the second dielectric structure. The device package further includes an integrated circuit die attached to the package substrate. The integrated circuit die includes a grating coupler adjacent to the second segment of the optical fiber. Attached Figure Description
[0007] The features disclosed herein are best understood when studied in conjunction with the accompanying figures, and are described in the following detailed description. It should be noted that, in accordance with industry standards, the features are not drawn to scale. In fact, the dimensions of the features may be arbitrarily increased or decreased for clarity of explanation.
[0008] Figures 1A to 1C This is a schematic diagram of an example embodiment of the device package described herein;
[0009] Figures 2A to 2F This is a schematic diagram of an example embodiment of the device package described herein;
[0010] Figure 3A and Figure 3B This is a schematic diagram of an example embodiment of the device package described herein;
[0011] Figure 4 This is a schematic diagram of an example embodiment of the device package described herein;
[0012] Figure 5 This is a schematic diagram of an example embodiment of the electronic device described herein;
[0013] Figure 6 This is a schematic diagram of an example embodiment of the electronic device described herein;
[0014] Figure 7 This is a schematic diagram of an example embodiment of the electronic device described herein;
[0015] Figure 8 This is a schematic diagram of an example embodiment of the electronic device described herein;
[0016] Figure 9 This is a flowchart of an example process associated with forming the semiconductor device described herein.
[0017] [Symbol Explanation]
[0018] 100: Example Implementation
[0019] 102: Device Packaging
[0020] 104: Packaging substrate
[0021] 106: Semiconductor die packaging
[0022] 108: Reinforcing Component Structure
[0023] 110~112: IC die
[0024] 114: Connection Structure
[0025] 116: Bottom filling material
[0026] 118: Insulating layer
[0027] 120~122: Passivation layer
[0028] 124: Metallization layer
[0029] 126: Interconnection Layer
[0030] 128: Encapsulation connection pad
[0031] 130: Encapsulation connection structure / Connection structure
[0032] 132: Grating Coupler
[0033] 134: Optical connector package
[0034] 136: Dielectric Structure
[0035] 138: Fiber Optic
[0036] 138a~138b: Optical fiber
[0037] 140: End
[0038] 142: End
[0039] 144: Section
[0040] 146: Transition Section
[0041] 148: Covering layer
[0042] 150: Reflective Structure
[0043] 152: Offset Section
[0044] 200: Example Implementation
[0045] 202: Carrier substrate
[0046] 204: Groove
[0047] 300: Example Implementation
[0048] 400: Example Implementation
[0049] 500: Example Implementation
[0050] 502: Electronic device
[0051] 504:Device substrate
[0052] 506: Insulator Structure
[0053] 508: Conductive Structure
[0054] 510: Optical connector package
[0055] 512: Dielectric Structure
[0056] Sections 514-516
[0057] 518: Transition Section
[0058] 520: Interface
[0059] 600: Example Implementation
[0060] 700: Example Implementation
[0061] 800: Example Implementation
[0062] 900: Process
[0063] 910~950: Square
[0064] x, y, z: axes Detailed Implementation
[0065] The following disclosure provides numerous different embodiments or examples of various features for the subject matter provided in the embodiments. Specific examples of components and configurations are described below to simplify this disclosure. Of course, these are merely examples and are not intended to be limiting. For example, the formation of a first feature above or on a second feature in the following description may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where additional features may be formed between the first and second features such that the first and second features are not in direct contact. Furthermore, reference numerals and / or letters may be repeated in various examples in this disclosure. This repetition is for simplicity and clarity and does not, in itself, indicate any relationship between the various embodiments and / or configurations discussed.
[0066] Furthermore, for ease of description, spatial relative terms such as “below,” “under,” “lower,” “above,” “upper,” and the like are used herein to describe the relationship between one element or feature illustrated in the figures and another element(s). Spatial relative terms are intended to cover different orientations of the device during use or operation, other than those depicted in the figures. Devices may be oriented in other ways (rotated 90 degrees or otherwise), and the spatial relative descriptors used herein can be interpreted similarly accordingly.
[0067] The integrated circuit (IC) die in the device package may include a grating coupler for receiving optical signals (e.g., laser signals or incident light) and directing the optical signals toward a photodetector in the semiconductor device. The photodetector can convert the optical signals into electrical signals, which can be processed by an IC device (e.g., an electronic IC device) of another IC die included in the device package.
[0068] In some cases, the reception of optical signals at the grating couplers of an IC die may be interfered with for various reasons. For example, an IC die may include multiple grating couplers positioned close to each other, and the optical signals directed to these grating couplers may interfere with each other (a phenomenon known as optical crosstalk), which can lead to increased conversion errors when converting the optical signals to electrical signals. The grating couplers may be further spaced to reduce the likelihood of optical crosstalk; this increases the lateral dimensions of the IC die. As another example, optical signals may propagate through multiple layers of the device package before reaching the grating couplers of the IC die, and the longer the distance traveled through these layers, the greater the scattering of the optical signal.
[0069] In some embodiments described herein, the device package includes a package substrate, and an optical connector package may be included within the package substrate. The optical connector package may include an optical fiber embedded within the package, and the optical fiber may be oriented to optically couple an optical signal to a grating coupler included in an IC die on the package substrate. The optical fiber may be configured to receive optical signals from a side of the package substrate, the top of the package substrate, and / or another portion of the package substrate.
[0070] The optical fiber in the optical connector package defines the optical signal path, through which the optical signal propagates to the grating coupler. The fiber reduces the likelihood of optical signal scattering into the layers surrounding the grating coupler within the IC die, thereby increasing the intensity of the received optical signal at the grating coupler. Additionally and / or otherwise, the fiber reduces the likelihood of optical signal interference from other optical signals by minimizing scattering and / or diffusion, thus reducing optical crosstalk within the IC die. In this way, the optical connector package reduces optical signal scattering and / or interference, which reduces the likelihood and / or rate of conversion errors when converting the optical signal to an electrical signal.
[0071] Figures 1A to 1C This is a schematic diagram of an example embodiment 100 of the device package 102 described herein. Figure 1A The diagram shows a cross-sectional view of the device package 102 in the x-direction. Figure 1A As shown, device package 102 includes a packaged semiconductor device, which includes a package substrate 104 and one or more semiconductor die packages 106, which are bonded, attached, mounted, and / or otherwise secured to the package substrate 104. Device package 102 may be referred to as a 3D package, a 2.5D package, and / or another type of semiconductor package.
[0072] like Figure 1A As shown, a reinforcing structure 108 may be included above and / or on the package substrate 104. Multiple semiconductor die packages 106 may be positioned within the periphery of the reinforcing structure 108 and may be spaced apart from the reinforcing structure 108. The reinforcing structure 108 may be included to reduce warpage and bending and maintain the planarity of the package substrate 104. The reinforcing structure 108 may include active circuitry, inactive structures, or a combination thereof. The reinforcing structure 108 may include one or more metallic materials, one or more dielectric materials, and / or one or more materials of another type.
[0073] like Figure 1A As further shown, the semiconductor die package 106 may include one or more integrated circuit (IC) dies, such as IC die 110 and IC die 112 that are bonded, attached, mounted, and / or otherwise secured to IC die 110. IC dies 110 and 112 may be stacked in the z-direction and vertically arranged in the semiconductor die package 106. Figure 1A The number and configuration of IC chips in the semiconductor chip package 106 shown are merely examples; other numbers and configurations are also within the scope of this disclosure. In some embodiments, the semiconductor chip package 106 may include a single IC chip.
[0074] IC die 110 is a semiconductor device that includes one or more photonic components, such as grating couplers, waveguides, photodiodes, shunts, polarizers, optical modulators, optical resonators, and / or edge couplers, as well as other examples. IC die 110 can be used to receive and / or transmit optical signals, process optical signals, and / or perform other functions associated with optical signals. In some embodiments, IC die 110 is used to convert optical signals into electrical signals, and / or convert electrical signals into optical signals.
[0075] IC die 112 may include the active integrated circuit of semiconductor die package 106 and may be used to perform various processing functions of semiconductor die package 106. For example, IC die 112 may be used to process electrical signals converted from optical signals by IC die 110. As another example, IC die 112 may generate electrical signals that will be converted into optical signals by IC die 110. Examples of IC chips 112 include logic IC chips, memory IC chips, high bandwidth memory (HBM) IC chips, input / output (I / O) chips, system-on-chip (SoC) IC chips, dynamic random access memory (DRAM) IC chips, complementary metal-oxide-semiconductor (CMOS) image sensor IC chips, silicon photonics IC chips, central processing unit (CPU) IC chips, graphics processing unit (GPU) IC chips, digital signal processing (DSP) IC chips, application-specific integrated circuit (ASIC) IC chips, and / or another type of active IC chip.
[0076] In some embodiments, the semiconductor die package 106 may include one or more inactive dies. Examples of inactive dies include dummy dies and / or other types of inactive dies. Dummy dies may also be referred to as insert dies, filler dies, and / or another type of die that does not perform electrical and / or processing functions of the semiconductor die package 106. The number and / or location of inactive dies in a top view of the semiconductor die package 106 (e.g., the horizontal arrangement of inactive dies in the top view) may be determined and / or selected to achieve and / or satisfy one or more parameters of the semiconductor die package 106. Unused areas in the horizontal arrangement of IC dies in the semiconductor die package 106 (e.g., areas not occupied by at least one IC die) may result in reduced flexibility and / or reduced stiffness of the semiconductor die package 106. This may increase the likelihood of the semiconductor die package 106 bending, warping, and / or physical damage. Therefore, the number and / or location of non-active dies can be determined and / or selected to reduce and / or minimize unused areas in the horizontal arrangement of IC dies in the top view. Thus, non-active dies can be located in unused areas between two or more active IC dies, in unused areas adjacent to (or close to) one or more active IC dies, or combinations thereof, to minimize unused areas in the horizontal arrangement of IC dies in the top view of the semiconductor die package 106.
[0077] The semiconductor die package 106 can be attached to the package substrate 104 of the device package 102 via a plurality of connection structures 114. Connection structures 114 may include bolts, pillars, bumps, solder balls, microbumps, under-bump metallization (UBM) structures, and / or other types of connection structures, and other examples. Connection structures 114 may include one or more materials, such as gold (Au), copper (Cu), silver (Ag), nickel (Ni), tin (Sn), lead (Pb), or palladium (Pd), and other examples. In some embodiments, one or more materials may be lead-free.
[0078] Underfill material 116 may be present below semiconductor die package 106 and between the connection structures 114 of semiconductor die package 106. Underfill material 116 may include a polymer, one or more fillers dispersed in a resin, epoxy resin, and / or another type of insulating material. Underfill material 116 may extend outward from semiconductor die package 106 toward reinforcement structure 108. For example, underfill material 116 may extend outward in a tapered or inclined manner. As another example, underfill material 116 may extend outward in a concave or convex manner.
[0079] like Figure 1AAs further shown, the package substrate 104 of the device package 102 includes an insulating layer 118, which may be sandwiched in the z-direction between passivation layers 120 and 122 on opposite sides of the package substrate 104. Passivation layer 120 may be included on the bottom of the package substrate 104, and passivation layer 122 may be included on the top of the package substrate 104. Passivation layers 120 and 122 may each include a solder resist (SR) mask, which allows connection structures to selectively attach to conductive structures in the package substrate 104. In some embodiments, passivation layers 120 and 122 include one or more polymer materials and one or more dielectric materials (e.g., silicon oxide (SiO2)). x ), silicon nitride (Si x N y ), silicon carbide (SiC) x ), silicon carbonitride (SiCN), and / or silicon oxynitride (SiON), and / or another suitable electrical insulating material.
[0080] The insulating layer 118 may include polyimide, polybenzoxazole (PBO), benzocyclobutene (BCB), ajinomoto buildup film (ABF), solder resist (SR) film, prepreg, nonwoven glass fabric, and / or another suitable insulating material. Multiple conductive structures may be included in the insulating layer 118 and may be configured in a plurality of vertically stacked layers in the z-direction. The conductive structure layer may extend between the top side of the package substrate 104 facing the semiconductor die package 106 and the bottom side of the package substrate 104 perpendicular to the top side in the z-direction. The conductive structure layer may include a plurality of alternating layers of metallization layer 124 and interconnect layer 126. The metallization layer 124 and interconnect layer 126 are electrically interconnected to provide signal and / or power distribution paths throughout the package substrate 104.
[0081] Metallization layer 124 may include trenches, metallization layers, conductive traces, and / or combinations of other types of conductive structures. Interconnect layer 126 may include vias, interconnects, and / or combinations of other types of conductive structures. Metallization layer 124 and interconnect layer 126 may each include one or more conductive materials, such as tungsten (W), cobalt (Co), ruthenium (Ru), titanium (Ti), aluminum (Al), copper (Cu), gold (Au), and / or combinations thereof, and other examples of conductive materials.
[0082] like Figure 1AAs further shown, at the bottom of the package substrate 104, a layer of the package connection pad 128 is located in the passivation layer 120 and electrically coupled to the bottom layer of the conductive structure of the package substrate 104 (e.g., the bottom metallization layer 124, the bottom interconnect layer 126). The package connection pad 128 can electrically couple the conductive structure of the package substrate 104 to the package connection structure 130 of the device package 102. In some embodiments, the package connection pad 128 includes a conductive material (e.g., aluminum (Al), aluminum copper (AlCu)) different from the conductive material of the bottom conductive pad (e.g., copper (Cu)) to facilitate the adhesion of the package connection structure 130 to the package connection pad 128. The package connection structure 130 may include solder balls, BGA ball grid array (BGA) balls, LGA planar grid array (LGA) pads, PGA pin grid array (PGA) pins, and / or another type of connection structure that enables the device package 102 to be attached (e.g., soldered, bonded, sleeved) to another device or layer, such as bonding. Figure 5 The device substrate 504 of the electronic device 502 shown and described.
[0083] like Figure 1A As further shown, the IC die 110 includes one or more grating couplers 132. The grating coupler 132 includes photonic devices for coupling optical signals from an optical fiber to one or more other photonic devices (e.g., waveguides, splitters, polarizers, modulators, demodulators, resonators, photodetectors) included in the IC die 110. The grating coupler 132 can be used to receive optical signals along a first direction (e.g., the z-direction) and redirect optical signals along a second direction (e.g., the x-direction, the y-direction).
[0084] The grating coupler 132 may include a plurality of gratings. In some embodiments, the gratings of the grating coupler 132 may be periodic, and the period of the gratings may be selected to achieve diffraction of one or more wavelengths of the optical signal. In some embodiments, the period of the gratings of the grating coupler 132 may be selected based on the wavelength(s) to be used for optical communication, may be selected based on the wavelength(s) to be used for wavelength division multiplexing (WDM), and / or may be selected for another purpose.
[0085] In some embodiments, the grating coupler 132 is formed of a semiconductor material, such as silicon (Si), germanium (Ge), and / or silicon-germanium (SiGe), and other examples. In some embodiments, the grating coupler 132 is formed of a dielectric material, such as silicon nitride (SiGe). x N y Such as Si3N4) and / or silicon oxide (SiO)x (such as SiO2), and other examples. In some embodiments, the grating coupler 132 is a hybrid grating coupler structure, which includes a two-layer structure having dielectric and semiconductor portions.
[0086] Multiple grating couplers 132 may be located in a portion or region of IC die 110, which extends laterally over the optical connector package 134 included in the package substrate 104. This provides an unobstructed optical propagation path for optical signals to propagate from the optical connector package 134 to the multiple grating couplers 132.
[0087] The optical connector package 134 is a structure used to couple optical signals from an external source to (multiple) grating couplers 132 with minimal optical loss and minimal optical crosstalk. The optical connector package 134 may include a dielectric structure 136 and one or more optical fibers 138 included in the dielectric structure 136. The dielectric structure 136 may include one or more polymer materials, one or more dielectric materials (e.g., silicon oxide (SiO2)). x ), silicon nitride (Si x N y ), silicon carbide (SiC) x The optical fiber 138 may include silica (e.g., SiO2), plastic optical fibers (POF), polymethyl methacrylate (PMMA), and / or another suitable optical fiber material.
[0088] Optical fiber 138 may be oriented such that a first end of optical fiber 138 faces an associated grating coupler 132 in IC die 110, and a second opposing end of optical fiber 138 faces an outer edge of package substrate 104, such as a side of package substrate 104. This allows optical signals to be provided to optical fiber 138 via the second end, and optical signals can propagate from the second end to the first end via optical fiber 138, where the optical signal is coupled to the associated grating coupler 132 in IC die 110. The grating couplers 132 may be oriented downwards (e.g., the gratings of the grating couplers 132 may face the optical connector package 134 in package substrate 104) to facilitate optical signal coupling from optical fiber 138 to the grating couplers 132.
[0089] The optical fiber 138 may include various segments, bends, transitions, and / or other components to facilitate the distribution of the optical fiber 138 within the dielectric structure 136 of the optical connector package 134. Additionally and / or otherwise, the optical fiber 138 may be configured and / or distributed in the dielectric structure 136 of the optical connector package 134 in one or more directions, including in the x-direction (e.g., the optical fiber 138 may be laterally configured in the x-direction), and / or in the y-direction (e.g., the optical fiber 138 may be laterally configured in the y-direction), and / or in the z-direction (e.g., the optical fiber 138 may be vertically configured in the z-direction).
[0090] The optical connector package 134 may be included (e.g., embedded) in the insulating layer 118 of the package substrate 104. Embedding the optical connector package 134 in the package substrate 104 saves space, and the enable device package 102 achieves a reduced size compared to including the optical connector package 134 as a separate structure on or next to the semiconductor die package 106. Additionally and / or otherwise, the optical fiber 138 confines the optical signal, which reduces the scattering and / or diffusion of the optical signal. This reduces the crosstalk volume (and / or the possibility of crosstalk) between the optical signals of adjacent grating couplers 132 in the IC die 110, allowing the grating couplers 132 to be positioned closer together to achieve a lower device pitch and higher device density in the IC die 110.
[0091] Figure 1B The diagram shows a detailed view of the optical connector package 134. (See attached image.) Figure 1B As shown, optical fiber 138 can be separated by dielectric structure 136 to optically isolate optical fiber 138. Optical fiber 138 may include an end 140 (e.g., facing the top of package substrate 104) facing the grating coupler 132 in the z-direction and an opposing end 142 facing the side of package substrate 104. As described above, optical fiber 138 may include various segments, including segment 144 (e.g., a substantially straight segment), transition segment 146 (e.g., a curved segment), and / or another segment.
[0092] Segment 144 may be provided for the propagation of optical signals along a specific direction. For example, segment 144 of optical fiber 138 may be provided for the propagation of optical signals along the x-direction within device package 102.
[0093] The transition section 146 can provide a transition between a first direction and a second direction to facilitate the propagation of optical signals from the first direction to the second direction. As an example, the transition section 146 can provide a transition between the propagation of optical signals in the x-direction and the propagation of optical signals in the z-direction.
[0094] like Figure 1BAs further shown, a cladding layer 148 may be included on the sidewall of the optical fiber 138. The cladding layer 148 may surround the optical fiber 138 and may be included to further increase optical confinement within the optical fiber 138. This reduces the possibility of light leakage from the optical fiber 138 and / or reduces the possibility of optical crosstalk between the optical fiber 138 and another optical fiber 138.
[0095] The cladding layer 148 may comprise one or more materials that promote internal reflection of optical signals in the associated optical fiber 138 and suppress diffraction of optical signals through the cladding layer 148. For example, the cladding layer 148 may be formed of a dielectric material having a lower refractive index than the material of the associated optical fiber 138. Due to total internal reflection of the optical signal at the interface between the optical fiber 138 and the cladding layer 148, the lower refractive index of the cladding layer 148 causes light to be confined within the optical fiber 138. Examples of such low-refractive-index materials include various fluoropolymers, such as poly(hexafluoropropylene oxide) and / or poly(pentadecanofluorooctyl acrylate), and / or non-fluorinated polymers, such as poly(methylhydrosiloxane) and / or hydroxypropyl cellulose, and other examples.
[0096] like Figure 1B As further shown, in some embodiments, the reflective structure 150 may be included in the IC die 110 above the grating coupler 132. The reflective structure 150 may be formed of a reflective material such as one or more metals and may be included to suppress the propagation of optical signals through the IC die 110.
[0097] Figure 1C The illustration shows a top view of the optical connector package 134, and an example top view layout of the optical fiber 138 within the optical connector package 134. Figure 1C As shown, optical fiber 138 can be configured or distributed in the y-direction and can extend primarily in the x-direction. The end 142 of optical fiber 138 can face the side of dielectric structure 136 in the x-direction. However, other configurations are also within the scope of this disclosure.
[0098] like Figure 1C As further illustrated, fiber 138 can be extended in the y-direction to provide an increased spacing between ends 142 compared to the spacing between ends 140, thereby facilitating optical signal coupling from the external connector to ends 142 while minimizing optical crosstalk. The extension of fiber 138 in the y-direction can be achieved by including an offset segment 152 between ends 140 and 142 of fiber 138. The offset segment 152 can be angled relative to the x-direction, such that the offset segment 152 is not parallel to the x-direction. The offset segments 152 of two or more fibers 138 can be at different angles relative to the x-direction. Additionally and / or otherwise, the offset segments 152 of two or more fibers 138 can be at approximately the same angle relative to the x-direction.
[0099] As mentioned above, Figures 1A to 1C Provided as an example only. Other examples may be provided. Figures 1A to 1C The descriptions differ from those in the text.
[0100] Figures 2A to 2F This is a schematic diagram of an example embodiment 200 forming the device package 102 described herein. (In conjunction with...) Figures 2A to 2F The one or more operations described may be performed using one or more of the following semiconductor processing tools: deposition tools, exposure tools (e.g., optical lithography tools), development tools, etching tools, planarization tools (e.g., chemical-mechanical planarization (CMP) tools, wafer polishing tools), pick and place tools, soldering tools, bonding tools, and / or another semiconductor processing tool.
[0101] like Figure 2A As shown, the packaging substrate 104 of the device package 102 can be formed on the carrier substrate 202. The carrier substrate 202 can facilitate the layer-by-layer construction of the packaging substrate 104, thereby forming a plurality of vertically arranged layers (e.g., metallization layer 124, interconnect layer 126) of conductive structure.
[0102] Forming the package substrate 104 may include forming a first portion of an insulating layer 118 of the package substrate 104 on a carrier substrate 202, forming a groove in the first portion of the insulating layer 118, and forming a first layer of conductive structure of the package substrate 104 (e.g., a first metallization layer 124, a first interconnect layer 126) in the groove. A second portion of the insulating layer 118 may be formed on the first portion, the groove may be formed in the second portion of the insulating layer 118, and a second layer of conductive structure (e.g., a second metallization layer 124, a second interconnect layer 126) may be formed in the second portion of the insulating layer 118, such that the second layer of conductive structure is electrically coupled and / or physically coupled to the first layer of conductive structure. Additional layers of conductive structure of the package substrate 104 may be formed in a similar manner. Additionally and / or otherwise, a layer of conductive structure may be formed first, and a portion of the insulating layer 118 may be formed around the layer of conductive structure.
[0103] The deposition tool can be used to deposit the insulating layer 118 using chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), and / or another suitable deposition technique. Additionally and / or otherwise, the material of the insulating layer 118 can be dispersed onto the carrier substrate 202 and cured.
[0104] In some embodiments, the insulating layer 118 is etched to form a groove using a pattern in the photoresist layer. In these embodiments, a deposition tool can be used to form the photoresist layer on the insulating layer 118 (e.g., using spin-on coating and / or another suitable deposition technique). An exposure tool can be used to expose the photoresist layer to a radiation source to pattern the photoresist layer. A developing tool can be used to develop and remove portions of the photoresist layer to expose the pattern. An etching tool can be used to etch the insulating layer 118 based on the pattern to form a groove. In some embodiments, the etching operation includes dry etching operations (e.g., plasma-based etching operations, gas-based etching operations), wet chemical etching operations, and / or another type of etching operation. In some embodiments, a photoresist removal tool can be used to remove the remaining portions of the photoresist layer (e.g., using chemical strippers, plasma ashing, and / or another technique). In some embodiments, a hard mask layer is used as an alternative technique for pattern-based etching of the insulating layer 118.
[0105] Deposition tools can be used to deposit layers of conductive structures (e.g., metallization layer 124 and / or interconnect layer 126) using CVD, PVD, ALD, electroplating, and / or other suitable deposition techniques. The conductive structure layer can be deposited in one or more deposition operations. In some embodiments, a seed layer is first deposited, and a layer of the conductive structure is deposited on the seed layer. In some embodiments, a liner is first deposited in a trench, and a layer of the conductive structure is deposited on the liner. The liner may include a barrier liner, an adhesive liner, and / or another type of liner. Examples of liner materials may include tantalum nitride (TaN), titanium nitride (TiN), and / or another suitable liner material. In some embodiments, a planarization operation (e.g., CMP operation) is performed after the deposition of the conductive structure layer using a planarization tool to planarize the conductive structure layer.
[0106] like Figure 2BAs shown, a recess 204 may be formed in the front side of the package substrate 104. The recess 204 may be formed in the insulating layer 118. In some embodiments, the insulating layer 118 is etched using a pattern in the photoresist layer to form the recess 204. In these embodiments, a photoresist layer may be formed on the insulating layer 118 using a deposition tool (e.g., using spin-on coating and / or another suitable deposition technique). The photoresist layer may be exposed to a radiation source using an exposure tool to pattern the photoresist layer. A development tool may be used to develop and remove portions of the photoresist layer to expose the pattern. The insulating layer 118 may be etched based on the pattern using an etching tool to form the recess 204. In some embodiments, the etching operation includes a dry etching operation (e.g., plasma-based etching, gas-based etching), a wet chemical etching operation, and / or another type of etching operation. In some embodiments, a photoresist removal tool may be used to remove the remaining portions of the photoresist layer (e.g., using a chemical stripper, plasma ashing, and / or another technique). In some embodiments, a hard mask layer is used as an alternative to pattern-etched insulating layer 118.
[0107] like Figure 2C As shown, an optical connector package 134 may be provided in a recess 204. In some embodiments, the optical connector package 134 is placed in the recess 204 using a pick-and-place tool. In some embodiments, a bonding tool is used to bond the dielectric structure 136 of the optical connector package 134 to the insulating layer 118.
[0108] In some embodiments, the optical connector package 134 is provided as a pre-fabricated component in the recess 204. In some embodiments, the optical connector package 134 may be formed in the recess 204. Forming the optical connector package 134 may include providing an optical fiber 138 and forming a dielectric structure 136 around the optical fiber 138. In some embodiments, the optical fiber 138 may be placed in a mold, and material of the dielectric structure 136 may be deposited around the optical fiber 138. In some embodiments, a first portion of the dielectric structure 136 is formed, the optical fiber 138 is placed on the first portion of the dielectric structure 136, and a second portion of the dielectric structure 136 is deposited over the optical fiber 138, such that the optical fiber 138 is encapsulated in the dielectric structure 136.
[0109] like Figure 2DAs shown, a layer of package connection pad 128 may be formed on the back side of package substrate 104. Deposition tools may be used to deposit the layer of package connection pad 128 using CVD, PVD, ALD, electroplating, and / or another suitable deposition technique. The layer of package connection pad 128 may be deposited in one or more deposition operations. In some embodiments, a seed layer is first deposited, and then the layer of package connection pad 128 is deposited on the seed layer. In some embodiments, a liner is first deposited in a groove, and then the layer of package connection pad 128 is deposited on the liner. The liner may include a barrier liner, an adhesive liner, and / or another type of liner. Examples of liner materials may include tantalum nitride (TaN), titanium nitride (TiN), and / or another suitable liner material. In some embodiments, a planarization tool is used to perform a planarization operation (e.g., CMP operation) to planarize the package connection pad 128.
[0110] like Figure 2D As further shown, passivation layers 120 and 122 may be formed over opposite sides of the package substrate 104. Deposition tools may be used to deposit passivation layers 120 and 122 using CVD, PVD, ALD, and / or other suitable deposition techniques. In some embodiments, planarization tools may be used to perform planarization operations (e.g., CMP operations) to planarize passivation layers 120 and 122.
[0111] In some embodiments, an encapsulation connection pad 128 is first formed, and a passivation layer 120 is formed around the encapsulation connection pad 128. In some embodiments, a passivation layer 120 is first formed, and the encapsulation connection pad 128 is formed within the passivation layer 120. In these embodiments, an opening through the passivation layer 120 can be formed by forming a sacrificial structure, forming the passivation layer 120 around the sacrificial structure, and subsequently removing the sacrificial structure, and the encapsulation connection pad 128 is formed in the opening in the passivation layer 120 left by the sacrificial structure.
[0112] like Figure 2E As shown, one or more semiconductor die packages 106 can be placed on the packaging substrate 104 of the device package 102 using a pick-and-place tool. For example, one or more semiconductor die packages 106 can be placed on the metallization layer 124 of the packaging substrate 104, and a soldering tool can be used to perform a soldering operation (e.g., wave soldering, reflow soldering) to attach one or more semiconductor die packages 106 to the packaging substrate 104. As another example, a bonding tool can be used to perform a bonding operation to bond the connection structure 114 of one or more semiconductor die packages 106 to the metallization layer 124 of the packaging substrate 104.
[0113] The semiconductor die package 106 can be placed on the package substrate 104 such that one or more grating couplers 132 of the IC die 110 of the semiconductor die package 106 are positioned above (and aligned with) the ends 140 of one or more optical fibers 138 included in the optical connector package 134 in the package substrate 104. An underfill material 116 can be dispersed around the connection structure 114 of the semiconductor die package 106 to encapsulate the connection structure 114.
[0114] like Figure 2E As further shown, the reinforcing structure 108 can be placed on the packaging substrate 104. The reinforcing structure 108 can be positioned such that the semiconductor die package 106 is located within the periphery of the reinforcing structure 108. The reinforcing structure 108 can be attached to the packaging substrate 104 using epoxy resin, adhesive, and / or can be fixed to the packaging substrate 104 in other ways.
[0115] like Figure 2F As shown, the package connection structure 130 can be attached to the package connection pad 128 at the bottom of the package substrate 104 of the device package 102. For example, solder balls or UBM structures can be attached to the package connection pad 128 on the rear side of the package substrate 104. The package connection structure 130 can be attached to the bottom of the package substrate 104 using a passivation layer 120 as a solder mask.
[0116] As mentioned above, Figures 2A to 2F Provided as an example only. Other examples may be provided. Figures 2A to 2F The descriptions differ from those in the text.
[0117] Figure 3A and Figure 3B This is a schematic diagram of an example embodiment 300 of the device package 102 described herein. For example... Figure 3A and Figure 3B As shown, Figure 3A and Figure 3B Example embodiment 300 of the device package 102 shown is similar to Figures 1A to 1C Example embodiment 100 of the device package 102 shown.
[0118] However, as Figure 3B As shown, in example embodiment 300 of device package 102, the ends 142 (e.g., outer ends) of one or more first optical fibers 138 in optical connector package 134 face different directions from the ends 142 of one or more second optical fibers 138 in optical connector package 134, and therefore face different sides of optical connector package 134. This provides greater flexibility for coupling optical signals to the ends 142 of optical fibers 138 and allows the ends 142 of optical fibers 138 to be further spread out to reduce optical crosstalk.
[0119] For example, the ends 142 of one or more first optical fibers 138 in the optical connector package 134 may face a first side of the optical connector package 134 in the y-direction, and the ends 142 of one or more second optical fibers 138 may face a second side of the optical connector package 134 in the x-direction. Therefore, the ends 142 of the one or more first optical fibers 138 and the ends 142 of the one or more second optical fibers 138 face adjacent and perpendicular sides of the optical connector package 134.
[0120] As another example, the ends 142 of one or more first optical fibers 138 in the optical connector package 134 may face a first side of the optical connector package 134 in the y-direction, and the ends 142 of one or more second optical fibers 138 may face a second side of the optical connector package 134 in the x-direction. Therefore, the ends 142 of the one or more first optical fibers 138 and the ends 142 of the one or more second optical fibers 138 face opposite and parallel sides of the optical connector package 134.
[0121] In some embodiments, the ends 142 (e.g., outer ends) of one or more first optical fibers 138 in the optical connector package 134, the ends 142 of one or more second optical fibers 138 in the optical connector package 134, and the ends 142 of one or more third optical fibers 138 in the optical connector package 134 face different directions, and thus face different sides of the optical connector package 134.
[0122] For example, the ends 142 of one or more first optical fibers 138 in the optical connector package 134 may face a first side of the optical connector package 134 in the y-direction, the ends 142 of one or more second optical fibers 138 may face a second side of the optical connector package 134 in the x-direction, and the ends 142 of one or more third optical fibers 138 in the optical connector package 134 may face a third side of the optical connector package 134 in the y-direction. Therefore, the ends 142 of the first optical fibers 138 and the ends 142 of the second optical fibers 138 face adjacent and perpendicular sides of the optical connector package 134, the ends 142 of the second optical fibers 138 and the ends 142 of the third optical fibers 138 face adjacent and perpendicular sides of the optical connector package 134, and the ends 142 of the first optical fibers 138 and the ends 142 of the third optical fibers 138 face adjacent and perpendicular sides of the optical connector package 134.
[0123] While example embodiments 100 and 300 include examples of lateral orientation and distribution of the end 142 of the optical fiber 138 in the optical connector package 134, other examples of lateral orientation and distribution of the end 142 of the optical fiber 138 in the optical connector package 134 are also within the scope of this disclosure. Additionally and / or otherwise, example embodiments 100 and 300 (and other examples of lateral orientation and distribution) of the end 142 of the optical fiber 138 may be implemented in another optical connector package described herein, such as in combination with... Figure 5 The diagram and description show the optical connector package 510.
[0124] As shown above, Figure 3A and Figure 3B Provided as an example only. Other examples may be provided. Figure 3A and Figure 3B The descriptions differ from those in the text.
[0125] Figure 4 This is a schematic diagram of an example embodiment 400 of the device package 102 described herein. For example... Figure 4 As shown, Figure 4 Example embodiment 400 of the device package 102 shown is similar to Figures 1A to 1C The example embodiment 100 of the device package 102 is shown. However, in the example embodiment 400 of the device package 102, the end 142 (e.g., the outer end) of the optical fiber 138 in the optical connector package 134 faces the top of the package substrate 104. Therefore, the end 140 (e.g., the inner end 140) faces approximately the same direction as the end 142 and is oriented in the same direction (e.g., in the z-direction). This allows optical signals to be coupled to the optical fiber 138 at the top of the device package 102, rather than (or except) to the optical fiber 138 on the side of the package substrate 104.
[0126] In some embodiments, the optical fiber 138 extends below the reinforcing structure 108, such as... Figure 4 The example shown. In these embodiments, the end 140 of the optical fiber 138 is located within the periphery of the reinforcement structure 108, and the end 142 of the optical fiber 138 is located outside the periphery of the reinforcement structure 108.
[0127] In some embodiments, the ends 140 and 142 may be located within the periphery of the reinforcing structure 108, such that the entire fiber 138 is located within the periphery of the reinforcing structure 108.
[0128] In some embodiments, the ends 140 and 142 of the first optical fiber 138 are located within the periphery of the reinforcing structure 108, the end 140 of the second optical fiber 138 is located within the periphery of the reinforcing structure 108, and the end 142 of the second optical fiber 138 is located outside the periphery of the reinforcing structure 108.
[0129] As shown above, Figure 4 Provided as an example only. Other examples may be provided. Figure 4 The descriptions differ from those in the text.
[0130] Figure 5 This is a schematic diagram of an example embodiment 500 of the electronic device 502 described herein. For example... Figure 5 As shown, electronic device 502 is a semiconductor device including device package 102, which is included (e.g., bonded to, attached to, soldered to) device substrate 504. Device substrate 504 may include circuit board, printed circuit board (PCB), socket (e.g., BGA socket, LGA socket), and / or another type of substrate, which includes one or more layers of insulating structure 506 and conductive structure 508 included in insulating structure 506. Connection structure 130 of device package 102 may be electrically coupled and / or physically coupled to conductive structure 508 of device substrate 504.
[0131] Figure 5 The device package 102 shown is similar to Figures 1A to 1C The example embodiment 100 of the device package 102 shown is illustrated. However, in the example embodiment 500 of the electronic device 502, the optical fiber 138 extends in the z-direction through the dielectric structure 136 and through the bottom of the package substrate 104. Furthermore, the optical fiber 138 extends into the device substrate 504, thus spanning both the package substrate 104 and the device substrate 504.
[0132] like Figure 5 As shown, device substrate 504 also includes another optical connector package 510. Optical connector package 510 may be positioned below optical connector package 134 such that optical connector packages 134 and 510 are perpendicularly adjacent (e.g., in the z-direction) within electronic device 502. Optical connector package 510 may include dielectric structure 512 and another portion of optical fiber 138 within dielectric structure 512. A cladding layer 148 may be included around the portion of optical fiber 138 within dielectric structure 512.
[0133] Dielectric structure 512 may include one or more polymer materials, one or more dielectric materials (e.g., silicon oxide (SiO2)). x ), silicon nitride (Si x N y ), silicon carbide (SiC) x Silicon carbonitride (SiCN) and / or silicon oxynitride (SiON), polyimide, polybenzoxazole (PBO), benzocyclobutene (BCB), quinone stacked film (ABF), solder resist (SR) film, prepreg composite optical fiber (prepreg), nonwoven glass fabric, / or another suitable insulating material.
[0134] like Figure 5 As shown, the end 140 of the optical fiber 138 is included in the optical connector package 134 and faces the grating coupler 132 in the IC die 110. A segment 514 of the optical fiber 138 extends through the dielectric structure 136. For example, the segment 514 may extend in the z-direction between the top and bottom of the package substrate 104. In some embodiments, the segment 514 may extend in another direction within the dielectric structure 136.
[0135] like Figure 5 As further shown, the end 142 of the optical fiber 138 is included in the optical connector package 510 and faces the side of the device substrate 504. Additionally and / or, one or more of the ends 142 face the bottom of the device substrate 504, and / or one or more of the ends 142 may face the top of the device substrate 504. A segment 516 of the optical fiber 138 extends through the dielectric structure 512 of the optical connector package 510. For example, the segment 516 may extend in the x-direction within the dielectric structure 512 of the optical connector package 510. In some embodiments, the segment 516 may extend in another direction within the dielectric structure 136.
[0136] like Figure 5 As further shown, the optical fiber 138 may include a transition segment 518 that transitions between the direction in which segment 516 extends and the direction in which segment 514 extends. An interface 520 between the transition segment 518 and segment 514 may be located between the encapsulation substrate 104 and the device substrate 504. Additionally and / or otherwise, the interface 520 between the transition segment 518 and segment 514 may be located within the optical connector package 134. Additionally and / or otherwise, the interface 520 between the transition segment 518 and segment 514 may be located within the optical connector package 510. The interface 520 may include an optical fiber connector, such as a fusion splice (e.g., an interface where the transition segment 518 and segment 514 are fused together), a mechanical connector (e.g., an interface where the end of the transition segment 518 is held together with segment 514 by a sleeve or connector), and / or another type of optical fiber connector.
[0137] In some embodiments, the device substrate 504 can be used in conjunction with Figures 2A to 2F The packaging substrate 104 described is formed using a similar processing technique. In some embodiments, the optical connector package 510 is used in conjunction with... Figures 2A to 2F The optical connector package 134 described is formed using a similar processing technique. In some embodiments, the optical connector package 510 is used in conjunction with... Figures 2A to 2F The optical connector package 134 described herein is provided with similar processing techniques in and / or on the device substrate 504.
[0138] In some embodiments, the electronic device 502 can be formed by providing a device package 102 on a device substrate 504. In some embodiments, the connection structure 130 of the device package 102 can be soldered to a conductive structure 508 in the electronic device 502. In some embodiments, the connection structure 130 of the device package 102 can be coupled to a conductive structure 508 in the electronic device 502.
[0139] As shown above, Figure 5 Provided as an example only. Other examples may be provided. Figure 5 The descriptions differ from those in the text.
[0140] Figure 6 This is a schematic diagram of an example embodiment 600 of the electronic device 502 described herein. Figure 6 As shown, Figure 6 The example embodiment 600 of the electronic device 502 shown is similar to Figure 5 Example embodiment 500 of the electronic device 502 shown.
[0141] However, in example embodiment 600 of electronic device 502, one or more optical fibers 138a are completely contained within optical connector package 134, and one or more optical fibers 138b span both optical connector package 134 and optical connector package 510. In other words, optical fiber 138a is included in optical connector package 134 and extends only through optical connector package 134, while optical fiber 138b is included in both optical connector package 134 and optical connector package 510 and extends through both. This provides greater flexibility for coupling optical signals to the ends 142 of optical fibers 138a and 138b, and allows the ends 142 of optical fibers 138a and 138b to be further spread out to reduce optical crosstalk.
[0142] The ends 140 and 142 of the (multiple) optical fibers 138a are located in the optical connector package 134. End 140 faces the top of the package substrate 104 and faces one or more grating couplers 132 in the z-direction. End 142 faces the lateral direction (e.g., the x-direction, y-direction) and the side of the package substrate 104.
[0143] The ends 140 of the plurality of optical fibers 138b are located in the optical connector package 134, while the ends 142 of the plurality of optical fibers 138b are located in the optical connector package 510. The ends 140 face the top of the package substrate 104 and face one or more grating couplers 132 in the z-direction. The ends 142 face the lateral direction (e.g., the x-direction, the y-direction) and face the side of the package substrate 104. Each of the plurality of optical fibers 138b includes a segment 514 in the optical connector package 134, a segment 516 in the optical connector package 510, a transition segment 518 in the optical connector package 510, and an interface 520 between the segment 514 and the transition segment 518.
[0144] As shown above, Figure 6 Provided as an example only. Other examples may be provided. Figure 6 The descriptions differ from those in the text.
[0145] Figure 7 This is a schematic diagram of an example embodiment 700 of the electronic device 502 described herein. For example... Figure 7 As shown, Figure 7 The example embodiment 700 of the electronic device 502 shown is similar to Figure 6 The electronic device 502 shown is an example embodiment 600. However, in an example embodiment 700 of the electronic device 502, the ends 142 (e.g., outer ends) of one or more optical fibers 138a contained within the optical connector package 134 face the top of the package substrate 104. Therefore, the ends 140 (e.g., inner ends 140) of the optical fibers 138a face approximately the same direction as the ends 142 and are oriented in the same direction (e.g., in the z-direction). This allows optical signals to be coupled to the optical fibers 138a at the top of the package substrate 104, rather than (or except) to the optical fibers 138a at the sides of the package substrate 104.
[0146] In some embodiments, the optical fiber 138a extends below the reinforcing structure 108, such as... Figure 7 The example shown. In these embodiments, the end 140 of the optical fiber 138a is located within the periphery of the reinforcement structure 108, and the end 142 of the optical fiber 138a is located outside the periphery of the reinforcement structure 108.
[0147] In some embodiments, the ends 140 and 142 may be located within the periphery of the reinforcing structure 108, such that the entire fiber 138a is located within the periphery of the reinforcing structure 108.
[0148] In some embodiments, the ends 140 and 142 of the first optical fiber 138a are located within the periphery of the reinforcing structure 108, the end 140 of the second optical fiber 138a is located within the periphery of the reinforcing structure 108, and the end 142 of the second optical fiber 138a is located outside the periphery of the reinforcing structure 108.
[0149] As mentioned above, Figure 7 Provided as an example only. Other examples may be provided. Figure 7 The descriptions differ from those in the text.
[0150] Figure 8 This is a schematic diagram of an example embodiment 800 of the electronic device 502 described herein. (As follows) Figure 8 As shown, Figure 8 The example embodiment 800 of the electronic device 502 shown is similar to Figure 6The electronic device 502 shown is an example embodiment 600. However, in an example embodiment 800 of the electronic device 502, the ends 142 (e.g., outer ends) of segments 516 of one or more optical fibers 138b in the optical connector package 134 face the top of the device substrate 504. Therefore, the ends 140 (e.g., inner ends 140) of the optical fibers 138b face approximately the same direction as the ends 142 and are oriented in the same direction (e.g., in the z-direction). This allows optical signals to be coupled to the optical fibers 138b at the top of the device substrate 504, rather than (or except) to the optical fibers 138b on the sides of the device substrate 504.
[0151] In some embodiments, the optical fiber 138b extends below the reinforcing structure 108, such as... Figure 8 The example shown. In these embodiments, the end 140 of the optical fiber 138b is located within the periphery of the reinforcement structure 108, and the end 142 of the optical fiber 138b is located outside the periphery of the reinforcement structure 108.
[0152] In some embodiments, the ends 140 and 142 may be located within the periphery of the reinforcing structure 108, such that the entire fiber 138b is located within the periphery of the reinforcing structure 108.
[0153] In some embodiments, the ends 140 and 142 of the first optical fiber 138b are located within the periphery of the reinforcing structure 108, the end 140 of the second optical fiber 138b is located within the periphery of the reinforcing structure 108, and the end 142 of the second optical fiber 138b is located outside the periphery of the reinforcing structure.
[0154] As mentioned above, Figure 8 Provided as an example only. Other examples may be provided. Figure 8 The descriptions differ from those in the text.
[0155] Figure 9 This is a flowchart of an example process 900 associated with forming the semiconductor device described herein. In some embodiments, one or more semiconductor processing tools (such as deposition tools, exposure tools, development tools, etching tools, planarization tools, ion implantation tools, annealing tools, wafer / die transfer tools, and / or another type of semiconductor processing tool) are used to perform... Figure 9 One or more process blocks.
[0156] like Figure 9 As shown, process 900 may include forming an insulating layer (block 910) of a package substrate. For example, one or more semiconductor processing tools may be used to form an insulating layer (e.g., insulating layer 118) of a package substrate (e.g., package substrate 104), as described herein.
[0157] like Figure 9As further shown, process 900 may include a plurality of vertically arranged layers (block 920) forming conductive structures in an insulating layer. For example, a plurality of vertically arranged layers (e.g., metallization layer 124, interconnect layer 126) forming conductive structures in an insulating layer may be formed using one or more semiconductor processing tools, as described herein.
[0158] like Figure 9 As further illustrated, process 900 may include forming a groove (block 930) in the insulating layer. For example, one or more semiconductor processing tools may be used to form a groove (e.g., groove 204) in the insulating layer, as described herein.
[0159] like Figure 9 As further illustrated, process 900 may include providing an optical connector package (block 940) in a recess. For example, one or more semiconductor processing tools may be used to provide the optical connector package (e.g., optical connector package 134) in the recess, as described herein. In some embodiments, the optical connector package includes a dielectric structure (e.g., dielectric structure 136) and an optical fiber (e.g., optical fiber 138) within the dielectric structure.
[0160] like Figure 9 As further illustrated, process 900 may include providing an IC die (block 950) on a packaging substrate over an optical connector package. For example, one or more semiconductor processing tools may be used to provide an IC die (e.g., IC die 110) on a packaging substrate over an optical connector package, as described herein.
[0161] Process 900 may include additional embodiments, such as any single embodiment or any combination of embodiments associated with one or more other processes described elsewhere herein.
[0162] In a first embodiment, providing an IC die on top of an optical connector package includes providing an IC die such that a grating coupler (e.g., grating coupler 132) included in the IC die is positioned on the optical fiber of the optical connector package.
[0163] In the second embodiment, alone or in combination with the first embodiment, providing an IC die on the optical connector package includes providing an IC die such that the grating coupler is positioned on the top end (e.g., end 140) of the optical fiber facing the package substrate.
[0164] In the third embodiment, alone or in combination with one or more of the first and second embodiments, process 900 includes attaching a packaging substrate to a device substrate (e.g., device substrate 504) such that an optical fiber is coupled to another optical connector package (e.g., optical connector package 510) in the device substrate.
[0165] although Figure 9 Example blocks of process 900 are shown, but in some embodiments, process 900 includes... Figure 9 Compared to the blocks depicted, there may be additional blocks, fewer blocks, different blocks, or blocks with different configurations. Alternatively, two or more blocks in process 900 can be executed in parallel.
[0166] In this manner, the device package includes a package substrate, and the optical connector package may be included within the package substrate. The optical connector package may include an optical fiber embedded within the optical connector package, and the optical fiber may be oriented to optically couple an optical signal to a grating coupler included in an IC die on the package substrate. The optical fiber may be configured to receive optical signals from the side of the package substrate, the top of the package substrate, and / or from a portion of the package substrate.
[0167] As described in more detail herein, some embodiments described herein include a device package. The device package includes a package substrate and an optical connector package within the package substrate. The optical connector package includes a dielectric structure and an optical fiber within the dielectric structure. The device package further includes an integrated circuit die attached to the package substrate, wherein a grating coupler is adjacent to the end of the optical fiber. In some embodiments, the end of the optical fiber faces the top of the package substrate. In some embodiments, the end of the optical fiber is a first end of the optical fiber, wherein a second end of the optical fiber opposite to the first end faces a side of the package substrate. In some embodiments, the optical fiber is a first optical fiber, and the optical connector package includes a second optical fiber within the dielectric structure, the first end of the second optical fiber facing the top of the package substrate, the second end of the first optical fiber opposite to the first end of the first optical fiber facing a first side of the package substrate, and the second end of the second optical fiber opposite to the first end of the second optical fiber facing a second side of the package substrate different from the first side. In some embodiments, the first side and the second side are multiple adjacent sides of the package substrate. In some embodiments, the first side and the second side are multiple opposite sides of the package substrate. In some embodiments, the end of the optical fiber is a first end, and the second end of the optical fiber opposite to the first end faces that portion of the encapsulation substrate. In some embodiments, the end of the optical fiber is the first end, and the second end of the optical fiber opposite to the first end faces the bottom of the encapsulation substrate.
[0168] As described in more detail herein, some embodiments described herein include a device package. The device package includes a package substrate and an optical connector package within the package substrate. The optical connector package includes a dielectric structure and a first optical fiber within the dielectric structure. The device package further includes an integrated circuit die attached to the package substrate, wherein a grating coupler is adjacent to the end of the first optical fiber. In some embodiments, the end of the first optical fiber faces the top of the package substrate. In some embodiments, the end of the first optical fiber is a first end of the first optical fiber, wherein a second end of the first optical fiber opposite to the first end faces a side of the package substrate. In some embodiments, the optical connector package includes a second optical fiber within the dielectric structure, the first end of the second optical fiber facing the top of the package substrate, the second end of the first optical fiber opposite to the first end of the first optical fiber facing a first side of the package substrate, and the second end of the second optical fiber opposite to the first end of the second optical fiber facing a second side of the package substrate different from the first side.
[0169] As described in more detail herein, some embodiments described herein include a device package. The device package includes a package substrate and an optical connector package within the package substrate. The optical connector package includes a dielectric structure and an optical fiber within the dielectric structure, wherein the end of the optical fiber faces the top of the package substrate. The device package further includes an integrated circuit die attached to the package substrate, wherein a grating coupler is adjacent to the end of the optical fiber.
[0170] As described in more detail herein, some embodiments described herein include an electronic device. The electronic device includes a device substrate and a device package attached to the device substrate. The device substrate includes a first optical connector package, the first optical connector package including a first dielectric structure and a first segment of an optical fiber in the first dielectric structure. The device package includes a package substrate and a second optical connector package within the package substrate. The second optical connector package includes a second dielectric structure and a second segment of an optical fiber in the second dielectric structure. The device package further includes an integrated circuit die attached to the package substrate. The integrated circuit die includes a grating coupler adjacent to the second segment of the optical fiber. In some embodiments, the first segment and the second segment of the optical fiber are coupled together between the first optical connector package and the second optical connector package. In some embodiments, a first end of the optical fiber in the first optical connector package faces a side of the device substrate, and a second end of the optical fiber in the second optical connector package faces the grating coupler. In some embodiments, the first end of the optical fiber in the first optical connector package faces a first direction, and the second end of the optical fiber in the second optical connector package faces a second direction approximately perpendicular to the first direction. In some embodiments, the optical fiber is a first optical fiber in an electronic device, and the second optical connector package includes the second optical fiber within a second dielectric structure. In some embodiments, the first end of the second optical fiber faces another grating coupler in an integrated circuit die, and the second end of the second optical fiber faces a side of the package substrate. In some embodiments, the first end of the first optical fiber faces the grating coupler, and the second end of the first optical fiber faces a top of the device substrate. In some embodiments, the first end of the second optical fiber faces another grating coupler in an integrated circuit die, the second end of the second optical fiber faces the top of the package substrate, the first end of the first optical fiber faces the grating coupler, and the second end of the first optical fiber faces the top of the device substrate.
[0171] As described in more detail herein, some embodiments described herein include a method of forming a device package. The method includes forming an insulating layer of a package substrate. The method includes forming a plurality of vertically arranged layers of a conductive structure in the insulating layer. The method includes forming a recess in the insulating layer. The method includes providing an optical connector package in the recess, wherein the optical connector package includes a dielectric structure and an optical fiber in the dielectric structure. The method includes providing an integrated circuit die on the package substrate, on top of the optical connector package. In some embodiments, the step of providing the integrated circuit die on top of the optical connector package includes providing the integrated circuit die such that a grating coupler included in the integrated circuit die is positioned over the optical fiber of the optical connector package. In some embodiments, the step of providing the integrated circuit die on top of the optical connector package includes providing the integrated circuit die such that a grating coupler is positioned over the top end of the optical fiber facing the package substrate. In some embodiments, the method further includes attaching the package substrate to a device substrate such that the optical fiber is coupled to another optical connector package in the device substrate.
[0172] The terms “approximately” and “substantially” can mean that a given quantity varies within 5% of that value (e.g., ±1%, ±2%, ±3%, ±4%, ±5%). These values are merely examples and are not intended to be limiting. It should be understood that, according to this disclosure, the terms “approximately” and “substantially” can refer to a percentage of the value of a given quantity.
[0173] The foregoing outlines the features of several embodiments to enable those skilled in the art to better understand the nature of this disclosure. Those skilled in the art will understand that this disclosure can be readily used as a basis for designing or modifying other processes and structures for implementing the embodiments introduced herein and / or achieving the same objectives and / or advantages. Those skilled in the art will also recognize that such equivalent constructions do not depart from the spirit and scope of this disclosure, and that such equivalent constructions can be modified, substituted, and replaced herein without departing from the spirit and scope of this disclosure.
Claims
1. A device package, characterized in that, Include: One packaging substrate; An optical connector package, wherein the optical connector package comprises, on the package substrate: A dielectric structure; and A first optical fiber, in the dielectric structure; and An integrated circuit die is attached to the packaging substrate. The integrated circuit die contains: A grating coupler is adjacent to one end of the first optical fiber.
2. The device packaging as described in claim 1, characterized in that, The end of the first optical fiber faces the top of the packaging substrate.
3. The device packaging as described in claim 2, characterized in that, Wherein, the end of the first optical fiber is a first end of the first optical fiber; and The second end of the first optical fiber, which is opposite to the first end, faces one side of the packaging substrate.
4. The device packaging as described in claim 2, characterized in that, The optical connector package includes a second optical fiber within the dielectric structure; One first end of the second optical fiber faces the top of the encapsulation substrate; A second end of the first optical fiber, opposite to the first end of the first optical fiber, faces a first side of the packaging substrate; and The second end of the second optical fiber, which is opposite to the first end of the second optical fiber, faces a second side of the packaging substrate that is different from the first side.
5. A device package, characterized in that, Include: One packaging substrate; An optical connector package, wherein the optical connector package comprises, on the package substrate: A dielectric structure; and An optical fiber, in the dielectric structure, wherein one end of the optical fiber faces a top of the packaging substrate; and An integrated circuit die is attached to the packaging substrate. The integrated circuit die contains: A grating coupler is located adjacent to the end of the optical fiber.
6. An electronic device, characterized in that, Include: A device substrate, comprising: A first optical connector package, comprising: A first dielectric structure; and A first segment of an optical fiber, in the first dielectric structure; and A device package is attached to the device substrate, the device package comprising: One packaging substrate; A second optical connector package, wherein the second optical connector package comprises, in the package substrate: A second dielectric structure; and A second segment of the optical fiber, within the second dielectric structure; and An integrated circuit die is attached to the packaging substrate. The integrated circuit die contains: A grating coupler is adjacent to the second segment of the optical fiber.
7. The electronic device as claimed in claim 6, characterized in that, The first segment and the second segment of the optical fiber are coupled together between the first optical connector package and the second optical connector package.
8. The electronic device as claimed in claim 6, characterized in that, The optical fiber is a first optical fiber in the electronic device; and The second optical connector package includes: A second optical fiber is incorporated within the second dielectric structure.
9. The electronic device as claimed in claim 8, characterized in that, One first end of the second optical fiber faces another grating coupler in the integrated circuit die; and One of the second ends of the second optical fiber faces one side of the packaging substrate.
10. The electronic device as claimed in claim 8, characterized in that, One first end of the second optical fiber faces another grating coupler in the integrated circuit die; A second end of the second optical fiber faces a top of the encapsulation substrate; One end of the first optical fiber faces the grating coupler; and The second end of the first optical fiber faces the top of the device substrate.