A control electrode voltage dynamic adjustment system

Abstract

The application discloses a control electrode voltage dynamic adjustment system, belongs to the technical field of power device control, and relates to a power module, wherein the power module comprises at least two cascaded voltage sources; a plurality of groups of switch assemblies, each group of switch assemblies comprising a first end and a second end, and the second end of each group of switch assemblies being connected to a power semiconductor device; wherein the two ends of the power module are connected to the first end of one group of switch assemblies, and the connection end between two adjacent voltage sources is connected to the first end of one group of switch assemblies. The application can realize more than the number of power supply control electrode voltage output by changing the switching state of the switch tube in the switch assembly without changing the original power supply network, and has the advantages of simple circuit, fast adjustment speed, high efficiency, low cost and the like.

Description

Technical Field

[0001] This application relates to the field of power device control technology, and in particular to a control electrode voltage dynamic adjustment system. Background Technology

[0002] The electrical characteristics of power semiconductor devices are significantly affected by the drive gate voltage. By adjusting the drive gate voltage, the core performance of power devices can be optimized, including reducing conduction losses, regulating switching speed, suppressing voltage spikes, and limiting short-circuit current. Therefore, developing a drive circuit with dynamically adjustable gate voltage is of significant practical importance and application value for improving the operating efficiency and long-term reliability of power semiconductor devices. However, existing gate voltage adjustment schemes either have slow voltage response speeds during adjustment or require increasing the number of power supplies and modifying the original power network to achieve multiple gate voltage outputs, resulting in complex circuits, low efficiency, and high costs. Utility Model Content

[0003] This application provides a control electrode voltage dynamic adjustment system that can solve the problem of slow control electrode voltage regulation response speed and difficulty in matching the dynamic control requirements under high frequency operating conditions. Without changing the original power network, the system can achieve control electrode voltage output exceeding the number of power supplies by changing the switching state of the switching transistors in the switching assembly.

[0004] To achieve the above objectives, in a first aspect, a control electrode voltage dynamic adjustment system is provided, comprising:

[0005] Power module 10, which includes at least two cascaded voltage sources;

[0006] Multiple sets of switching components 20, each set of switching components 20 includes a first end and a second end, and the second end is respectively connected to a power semiconductor device;

[0007] The two ends of the power module 10 are respectively connected to the first end of a set of switching components 20, and the connection end between two adjacent voltage sources is connected to the first end of the set of switching components 20.

[0008] In some embodiments, the positive terminal of the voltage source in the power module 10 is connected to the negative terminal of the preceding voltage source, and the negative terminal of the voltage source is connected to the positive terminal of the following voltage source.

[0009] In some embodiments, the switching assembly 20 includes at least one switching transistor.

[0010] In some embodiments, the switching transistor is one or more of a MOSFET, an IGBT, or a transistor.

[0011] In some embodiments, the power module 10 includes a first voltage source and a second voltage source;

[0012] The positive terminal of the first voltage source is connected to the first terminal of the first switching assembly 20, the negative terminal of the first voltage source and the positive terminal of the second voltage source are both connected to the first terminal of the second switching assembly 20, the negative terminal of the second voltage source is connected to the first terminal of the third switching assembly 20, and the second terminals of the first switching assembly 20, the second switching assembly 20 and the third switching assembly 20 are all connected to the power semiconductor device.

[0013] In some embodiments, at least one set of switching components 20 includes two switching transistors.

[0014] In some embodiments, the first switching assembly 20 includes a first switching transistor and a second switching transistor, the second switching assembly 20 includes a third switching transistor and a fourth switching transistor, and the third switching assembly 20 includes a fifth switching transistor and a sixth switching transistor; the first terminals of both the first and second switching transistors are connected to the positive terminal of the first voltage source, the second terminal of the first switching transistor is connected to the low-potential terminal of the power semiconductor device, and the second terminal of the second switching transistor is connected to the control terminal of the power semiconductor device; the first terminals of both the third and fourth switching transistors are connected to the positive terminal of the second voltage source, the second terminal of the third switching transistor is connected to the control terminal of the power semiconductor device, and the second terminal of the fourth switching transistor is connected to the low-potential terminal of the power semiconductor device; the first terminals of both the fifth and sixth switching transistors are connected to the negative terminal of the second voltage source, the second terminal of the fifth switching transistor is connected to the control terminal of the power semiconductor device, and the second terminal of the sixth switching transistor is connected to the low-potential terminal of the power semiconductor device.

[0015] In some embodiments, the sum of the forward voltage amplitudes of all voltage sources in the power module 10 when connected in series is less than the maximum withstand forward voltage between the control electrode and the low potential electrode of the power semiconductor device.

[0016] In some embodiments, the absolute value of the sum of the negative voltage amplitudes of all voltage sources in the power module 10 when they are connected in series is less than the absolute value of the highest withstand positive and negative voltages between the control electrode and the low potential electrode of the power semiconductor device.

[0017] In some embodiments, a control unit 30 is also included, which is connected to the control terminal of the switch assembly 20.

[0018] This application does not change the original power network of the driver. By changing the switching state of the switching transistors in the switching assembly, the power module outputs a control electrode voltage that is greater than the number of power supplies. The circuit is simple, the cost is lower, and the efficiency is higher. The switching method of the switching transistors enables the control electrode voltage regulation circuit to have fast response characteristics. Attached Figure Description

[0019] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0020] Figure 1 This is a schematic diagram of the control electrode voltage dynamic adjustment system provided in the embodiments of this application;

[0021] Figure 2 This is a schematic diagram of one embodiment of the control electrode voltage dynamic adjustment system provided in this application.

[0022] Figure 3 This is a schematic diagram of one embodiment of the control electrode voltage dynamic adjustment system provided in this application.

[0023] Figure 4 This is a schematic diagram of one embodiment of the control electrode voltage dynamic adjustment system provided in this application.

[0024] Figure 5 This is a schematic diagram of one embodiment of the control electrode voltage dynamic adjustment system provided in this application.

[0025] Figure 6 This is a schematic diagram of one embodiment of the control electrode voltage dynamic adjustment system provided in this application.

[0026] Figure 7 This is a schematic diagram of one embodiment of the control electrode voltage dynamic adjustment system provided in this application.

[0027] Figure 8 This is a schematic diagram of one embodiment of the control electrode voltage dynamic adjustment system provided in this application.

[0028] Figure 9 This is a schematic diagram of one embodiment of the control electrode voltage dynamic adjustment system provided in this application.

[0029] Reference numerals: 10-Power module, 20-Switch assembly, 30-Control unit. Detailed Implementation

[0030] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0031] Furthermore, descriptions involving "first," "second," etc., in the embodiments of this application are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, features defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. If the combination of technical solutions is contradictory or impossible to implement, such a combination of technical solutions should be considered non-existent and not within the scope of protection claimed in this application.

[0032] The inventors have discovered that current control electrode voltage adjustment schemes generally suffer from significant technical bottlenecks: on the one hand, the response speed of the control electrode voltage is slow, making it difficult to match the dynamic adjustment requirements under high-frequency operating conditions; on the other hand, some schemes require increasing the number of power supplies to output multiple control electrode voltages, necessitating structural modifications to the original power network. This not only increases system complexity but also reduces circuit conversion efficiency and raises circuit costs. Therefore, this application provides a dynamic control electrode voltage adjustment system. This application does not alter the original driving power network and achieves control electrode voltage outputs exceeding the number of power supplies through switching. The system features fast response speed, simple circuitry, low cost, and high efficiency.

[0033] The power semiconductor devices applicable to the dynamic adjustment system and control method for the control electrode voltage provided in this application include insulated gate bipolar transistors (hereinafter referred to as IGBTs), metal-oxide-semiconductor field-effect transistors (hereinafter referred to as MOSFETs) or bipolar junction transistors (hereinafter referred to as BJTs).

[0034] An IGBT consists of a gate (G), a collector (C), and an emitter (E). The gate (G) is the control electrode, and the emitter (E) is a low-potential electrode, typically connected to the negative terminal of the power supply or grounded during operation. The control electrode voltage represents the voltage between the emitter (E) and the gate (G). A MOSFET consists of a source (S), a drain (D), and a gate (G), with the gate (G) serving as the control electrode. For an N-channel MOSFET, the source (S) is a low-potential electrode, typically connected to the negative terminal of the power supply or grounded during operation. The control electrode voltage represents the voltage between the source (S) and the gate (G). For a P-channel MOSFET, the drain (D) is a low-potential electrode, typically connected to the negative terminal of the power supply or grounded during operation. The control electrode voltage represents the voltage between the drain (D) and the gate (G). A BJT consists of a base (B), a collector (C), and an emitter (E). The base (B) is the control electrode. For an NPN BJT, the emitter (E) is a low-potential electrode and is typically connected to the negative terminal of the power supply or grounded during operation. The control electrode voltage represents the voltage between the emitter (E) and the base (B). For a PNP BJT, the collector (C) is a low-potential electrode and is typically connected to the negative terminal of the power supply or grounded during operation. The control electrode voltage represents the voltage between the collector (C) and the base (B).

[0035] on the one hand, Figure 1 This is a schematic diagram of the control electrode voltage dynamic adjustment system provided in the embodiments of this application, such as... Figure 1 As shown, the control electrode voltage dynamic adjustment system provided in this embodiment includes a power supply module 10 and multiple sets of switching components 20. The power supply module 10 includes at least two cascaded voltage sources. Each set of switching components 20 includes a first terminal and a second terminal. Both ends of the power supply module 10 are connected to the first terminal of a set of switching components 20. The connection terminal between two adjacent voltage sources is connected to the first terminal of a set of switching components 20. The second terminal of each set of switching components 20 is connected to a power semiconductor device. The control electrode voltage output exceeds the number of power sources through switching.

[0036] It may also include a control unit 30, which is connected to the control terminal of the switching assembly 20. The control unit 30 can send control commands to the switching assembly 20 to control the switching on or off in the switching assembly 20, thereby automatically providing different voltage values ​​to the power semiconductor device.

[0037] In some embodiments, the voltage sources in the power module 10 are cascaded, that is, the positive terminal of one voltage source is connected to the negative terminal of the preceding voltage source, and the negative terminal of the voltage source is connected to the positive terminal of the following voltage source.

[0038] In some embodiments, the switching assembly 20 includes at least one switching transistor, specifically, there may be one or two switching transistors. The switching transistors in multiple sets of switching assemblies 20 cooperate with each other to generate different voltage values.

[0039] In some embodiments, the switching transistor is one or more of a MOSFET, an IGBT, or a transistor.

[0040] In some embodiments, at least one set of switching components in the control electrode voltage dynamic adjustment system includes two of the aforementioned switching transistors.

[0041] In some embodiments, the control electrode voltage dynamic adjustment system includes a power supply module 10 and three sets of switching components 20, wherein the power supply module 10 includes a first voltage source V1 and a second voltage source V2; the positive terminal of the first voltage source V1 is connected to the first terminal of the first switching component, the negative terminal of the first voltage source V1 and the positive terminal of the second voltage source V2 are both connected to the first terminal of the second switching component 20, the negative terminal of the second voltage source V2 is connected to the first terminal of the third switching component 20, and the second terminals of the first switching component 20, the second switching component 20 and the third switching component 20 are all connected to power semiconductor devices.

[0042] Specifically, the first switching assembly 20 includes a first switching transistor S1 and a second switching transistor S2; the second switching assembly 20 includes a third switching transistor S3 and a fourth switching transistor S4; the third switching assembly 20 includes a fifth switching transistor S5 and a sixth switching transistor S6; the first terminals of the first switching transistor S1 and the second switching transistor S2 are both connected to the positive terminal of the first voltage source V1; the second terminal of the first switching transistor S1 is connected to the low-potential terminal of the power semiconductor device; the second terminal of the second switching transistor S2 is connected to the control terminal of the power semiconductor device; the first terminals of the third switching transistor S3 and the fourth switching transistor S4 are both connected to the positive terminal of the second voltage source V2; the second terminal of the third switching transistor S3 is connected to the control terminal of the power semiconductor device; the second terminal of the fourth switching transistor S4 is connected to the low-potential terminal of the power semiconductor device; the first terminals of the fifth switching transistor S5 and the sixth switching transistor S6 are both connected to the negative terminal of the second voltage source V2; the second terminal of the fifth switching transistor S5 is connected to the control terminal of the power semiconductor device; the second terminal of the sixth switching transistor S6 is connected to the low-potential terminal of the power semiconductor device. In this embodiment, the power semiconductor device used is an IGBT.

[0043] Depending on the combination of different switching transistors, the power module 10 can output different voltage values. Table 1 shows the relationship between the switching transistor state and the output voltage of the power module 10 in this embodiment.

[0044] Table 1

[0045]

[0046]

[0047] In Table 1, 0 indicates that the switching transistor is in the off state, and 1 indicates that the switching transistor is in the on state. The "-" indicates the voltage direction. The meanings of "0", "1" and "-" in the following table are the same as those in Table 1.

[0048] When the second switch S2 and the fourth switch S4 are turned on, and the first switch S1, the third switch S3, the fifth switch S5, and the sixth switch S6 are turned off, the positive terminal of the first voltage source V1 is connected to the gate (G) of the IGBT, and the negative terminal of the first voltage source V1 is connected to the emitter (E) of the IGBT. At this time, the first voltage source V1 provides a voltage between the gate and emitter of the IGBT, that is, the voltage value V between the gate and emitter is... ge Let v1 be the voltage value output by the first voltage source V1.

[0049] When the third switch S3 and the sixth switch S6 are turned on, and the first switch S1, the second switch S2, the fourth switch S4, and the fifth switch S5 are turned off, the positive terminal of the second voltage source V2 is connected to the gate (G) of the IGBT, and the negative terminal of the second voltage source V2 is connected to the emitter (E) of the IGBT. At this time, the second voltage source V2 provides a voltage between the gate and emitter of the IGBT, that is, the voltage value V between the gate and emitter is... ge v2 represents the voltage output of the second voltage source V2.

[0050] When the second switch S2 and the sixth switch S6 are turned on, and the first switch S1, the third switch S3, the fourth switch S4, and the fifth switch S5 are turned off, the positive terminal of the first voltage source V1 is connected to the gate (G) of the IGBT, the negative terminal of the second voltage source V2 is connected to the emitter (E) of the IGBT, and the negative terminal of the first voltage source V1 is connected to the positive terminal of the second voltage source V2. At this time, the series-connected first voltage source V1 and second voltage source V2 provide a voltage between the gate (G) and emitter (E) of the IGBT, i.e., the voltage value V between the gate (G) and emitter (E) is... ge It is v1+v2.

[0051] When only two switching transistors in the same switching assembly 20 are turned on, the gate (G) of the IGBT is equivalent to ground. For example, when the first switching transistor S1 and the second switching transistor S2 are turned on, and the third switching transistor S3, the fourth switching transistor S4, the fifth switching transistor S5, and the sixth switching transistor S6 are turned off, the gate (G) and the emitter (E) of the IGBT are connected, so the voltage between the gate and the emitter is 0.

[0052] When the first switch S1 and the third switch S3 are turned on, and the second switch S2, the fourth switch S4, the fifth switch S5, and the sixth switch S6 are turned off, the positive terminal of the first voltage source V1 is connected to the emitter (E) of the IGBT, and the negative terminal of the first voltage source V1 is connected to the gate (G) of the IGBT. At this time, the first voltage source V1 provides a reverse voltage between the gate (G) and emitter (E) of the IGBT, that is, the voltage value V between the gate (G) and emitter (E) is... ge It is -v1.

[0053] When the fourth switch S4 and the fifth switch S5 are turned on, and the first switch S1, the second switch S2, the third switch S3, and the sixth switch S6 are turned off, the positive terminal of the second voltage source V2 is connected to the emitter (E) of the IGBT, and the negative terminal of the second voltage source V2 is connected to the gate (G) of the IGBT. At this time, the second voltage source V2 provides a reverse voltage between the gate (G) and emitter (E) of the IGBT, that is, the voltage value V between the gate (G) and emitter (E) is... ge It is -v2.

[0054] When the first switch S1 and the fifth switch S5 are turned on, and the second switch S2, the third switch S3, the fourth switch S4, and the sixth switch S6 are turned off, the positive terminal of the first voltage source V1 is connected to the emitter (E) of the IGBT, the negative terminal of the second voltage source V2 is connected to the gate (G) of the IGBT, and the negative terminal of the first voltage source V1 is connected to the positive terminal of the second voltage source V2. At this time, the series-connected first voltage source V1 and second voltage source V2 provide a reverse voltage between the gate (G) and emitter (E) of the IGBT, i.e., the voltage value V between the gate (G) and emitter (E) is... ge It is -v1-v2.

[0055] In this embodiment, by controlling different switching transistors to perform switching combinations, the power module 10 can output seven different voltage values ​​after passing through the switching assembly 20: -v1-v2, -v1, -v2, 0V, v2, v1, and v1+v2, so that the gate voltage of the power semiconductor device can be dynamically adjusted.

[0056] In some embodiments, the sum of the forward voltage amplitudes of all voltage sources in the power module 10 when connected in series is less than the maximum withstand forward voltage between the control electrode and the low potential electrode of the power semiconductor device. For example, the power module 10 includes two voltage sources connected in series, and the voltage amplitude V of the first voltage source V1 is V 1m The voltage amplitude V of the second voltage source V2 2m The sum of these values ​​is less than the highest withstand forward voltage V between the control electrode and the low potential electrode of the power semiconductor device. s V 1m +V 2m <V s .

[0057] In some embodiments, the absolute value of the sum of the negative voltage amplitudes of all voltage sources in the power module 10 when connected in series is less than the absolute value of the highest withstand negative voltage between the control electrode and the low potential electrode of the power semiconductor device. For example, the power module 10 includes two voltage sources connected in series, and the negative voltage amplitude of the first voltage source V1 is -V 1m The negative voltage amplitude of the second voltage source V2 -V 2m The absolute values ​​of the sums are less than the maximum withstand negative voltage -V between the control electrode and the low-potential electrode of the power semiconductor device. s The absolute value of |-V 1m -V 2m |<|-V s |

[0058] In some embodiments, the control electrode voltage dynamic adjustment system has two sets of switching components 20, each including two switching transistors.

[0059] Figure 2 This is a schematic diagram of one embodiment of the control electrode voltage dynamic adjustment system provided in this application; as shown. Figure 2 As shown, the first switching assembly 20 includes a first switching transistor S1, the second switching assembly 20 includes a second switching transistor S2 and a third switching transistor S3, and the third switching assembly 20 includes a fourth switching transistor S4 and a fifth switching transistor S5. The first terminal of the first switching transistor S1 is connected to the positive terminal of the first voltage source V1, and the second terminal of the first switching transistor S1 is connected to the control terminal of the power semiconductor device. The first terminals of the second switching transistors S2 and S3 are both connected to the positive terminal of the second voltage source V2, the second terminal of the second switching transistor S2 is connected to the control terminal of the power semiconductor device, and the second terminal of the third switching transistor S3 is connected to the low-potential terminal of the power semiconductor device. The first terminals of the fourth switching transistor S4 and S5 are both connected to the negative terminal of the second voltage source V2, the second terminal of the fourth switching transistor S4 is connected to the control terminal of the power semiconductor device, and the second terminal of the fifth switching transistor S5 is connected to the low-potential terminal of the power semiconductor device.

[0060] Depending on the combination of different switching transistors, the power module 10 can output different voltage values. Table 2 shows the relationship between the switching transistor state and the output voltage of the power module 10 in this embodiment.

[0061] Table 2

[0062]

[0063] When the first switch S1 and the third switch S3 are turned on, and the second switch S2, the fourth switch S4, and the fifth switch S5 are turned off, the positive terminal of the first voltage source V1 is connected to the gate (G) of the IGBT, and the negative terminal of the first voltage source V1 is connected to the emitter (E) of the IGBT. At this time, the first voltage source V1 provides a voltage between the gate and emitter of the IGBT, that is, the voltage value V between the gate and emitter is... ge Let v1 be the voltage value output by the first voltage source V1.

[0064] When the third switch S3 and the fifth switch S5 are turned on, and the first switch S1, the second switch S2, and the fourth switch S4 are turned off, the positive terminal of the second voltage source V2 is connected to the gate (G) of the IGBT, and the negative terminal of the second voltage source V2 is connected to the emitter (E) of the IGBT. At this time, the second voltage source V2 provides a voltage between the gate and emitter of the IGBT, that is, the voltage value V between the gate and emitter is... ge v2 represents the voltage output of the second voltage source V2.

[0065] When the first switch S1 and the fifth switch S5 are turned on, and the second switch S2, the third switch S3, and the fourth switch S4 are turned off, the positive terminal of the first voltage source V1 is connected to the gate (G) of the IGBT, the negative terminal of the second voltage source V2 is connected to the emitter (E) of the IGBT, and the negative terminal of the first voltage source V1 is connected to the positive terminal of the second voltage source V2. At this time, the series-connected first voltage source V1 and second voltage source V2 provide a voltage between the gate (G) and emitter (E) of the IGBT, i.e., the voltage value V between the gate (G) and emitter (E) is... ge It is v1+v2.

[0066] When the third switch S3 and the fourth switch S4 are turned on, and the first switch S1, the second switch S2, and the fifth switch S5 are turned off, the positive terminal of the second voltage source V2 is connected to the emitter (E) of the IGBT, and the negative terminal of the second voltage source V2 is connected to the gate (G) of the IGBT. At this time, the second voltage source V2 provides a reverse voltage between the gate (G) and emitter (E) of the IGBT, that is, the voltage value V between the gate (G) and emitter (E) is... ge It is -v2.

[0067] Therefore, in this embodiment, by controlling different switching transistors to switch in combination, the power module 10 can output five different voltage values ​​-v2, 0V, v2, v1, and v1+v2 after passing through the switching assembly 20, so as to dynamically adjust the gate voltage of the power semiconductor device.

[0068] Figure 3 This is a schematic diagram of one embodiment of the control electrode voltage dynamic adjustment system provided in this application; as shown. Figure 3As shown, the first switching assembly 20 includes a first switching transistor S1, the second switching assembly 20 includes a second switching transistor S2 and a third switching transistor S3, and the third switching assembly 20 includes a fourth switching transistor S4 and a fifth switching transistor S5. The first terminal of the first switching transistor S1 is connected to the positive terminal of the first voltage source V1, and the second terminal of the first switching transistor S1 is connected to the low-potential electrode of the power semiconductor device. The first terminals of the second switching transistor S2 and the third switching transistor S3 are both connected to the positive terminal of the second voltage source V2. The second terminal of the second switching transistor S2 is connected to the control electrode of the power semiconductor device, and the second terminal of the third switching transistor S3 is connected to the low-potential electrode of the power semiconductor device. The first terminals of the fourth switching transistor S4 and the fifth switching transistor S5 are both connected to the negative terminal of the second voltage source V2. The second terminal of the fourth switching transistor S4 is connected to the control electrode of the power semiconductor device, and the second terminal of the fifth switching transistor S5 is connected to the low-potential electrode of the power semiconductor device.

[0069] Depending on the combination of different switching transistors, the power module 10 can output different voltage values. Table 3 shows the relationship between the switching transistor states and the output voltage of the power module 10 in this embodiment. As shown in Table 3, in this embodiment, by controlling different switching transistors to switch in combination, the power module 10 can output five different voltage values—-v1, -v2, -v1, -v2, 0V, and v2—after passing through the switching assembly 20, so that the gate voltage of the power semiconductor device can be dynamically adjusted.

[0070] Table 3

[0071]

[0072]

[0073] Figure 4 This is a schematic diagram of one embodiment of the control electrode voltage dynamic adjustment system provided in this application; as shown. Figure 4 As shown, the first switching assembly 20 includes a first switching transistor S1 and a second switching transistor S2; the second switching assembly 20 includes a third switching transistor S3; the third switching assembly 20 includes a fourth switching transistor S4 and a fifth switching transistor S5; the first terminals of the first switching transistor S1 and the second switching transistor S2 are both connected to the positive terminal of the first voltage source V1; the second terminal of the first switching transistor S1 is connected to the low-potential electrode of the power semiconductor device; the second terminal of the second switching transistor S2 is connected to the control electrode of the power semiconductor device; the first terminal of the third switching transistor S3 is connected to the positive terminal of the second voltage source V2; the second terminal of the third switching transistor S3 is connected to the low-potential electrode of the power semiconductor device; the first terminals of the fourth switching transistor S4 and the fifth switching transistor S5 are both connected to the negative terminal of the second voltage source V2; the second terminal of the fourth switching transistor S4 is connected to the control electrode of the power semiconductor device; the second terminal of the fifth switching transistor S5 is connected to the low-potential electrode of the power semiconductor device.

[0074] Depending on the combination of different switching transistors, the power module 10 can output different voltage values. Table 4 shows the relationship between the switching transistor states and the output voltage of the power module 10 in this embodiment. As shown in Table 4, in this embodiment, by controlling different switching transistors to switch in combination, the power module 10 can output five different voltage values—-v1, -v2, -v1, -v2, 0V, and v2—after passing through the switching assembly 20, so that the gate voltage of the power semiconductor device can be dynamically adjusted.

[0075] Table 4

[0076]

[0077] Figure 5 This is a schematic diagram of one embodiment of the control electrode voltage dynamic adjustment system provided in this application; as shown. Figure 5 As shown, the first switching assembly 20 includes a first switching transistor S1 and a second switching transistor S2; the second switching assembly 20 includes a third switching transistor S3; the third switching assembly 20 includes a fourth switching transistor S4 and a fifth switching transistor S5; the first terminals of the first switching transistor S1 and the second switching transistor S2 are both connected to the positive terminal of the first voltage source V1; the second terminal of the first switching transistor S1 is connected to the low potential terminal of the power semiconductor device; the second terminal of the second switching transistor S2 is connected to the control terminal of the power semiconductor device; the first terminal of the third switching transistor S3 is connected to the positive terminal of the second voltage source V2; the second terminal of the third switching transistor S3 is connected to the control terminal of the power semiconductor device; the first terminals of the fourth switching transistor S4 and the fifth switching transistor S5 are both connected to the negative terminal of the second voltage source V2; the second terminal of the fourth switching transistor S4 is connected to the control terminal of the power semiconductor device; the second terminal of the fifth switching transistor S5 is connected to the low potential terminal of the power semiconductor device.

[0078] Depending on the combination of different switching transistors, the power module 10 can output different voltage values. Table 5 shows the relationship between the switching transistor states and the output voltage of the power module 10 in this embodiment. As shown in Table 5, in this embodiment, by controlling different switching transistors to perform switching combinations, the power module 10 can output five different voltage values—-v1-v2, -v1, 0V, v2, and v1+v2—after passing through the switching assembly 20, so that the gate voltage of the power semiconductor device can be dynamically adjusted.

[0079] Table 5

[0080]

[0081] Figure 6 This is a schematic diagram of one embodiment of the control electrode voltage dynamic adjustment system provided in this application; as shown. Figure 6As shown, the first switching assembly 20 includes a first switching transistor S1 and a second switching transistor S2, the second switching assembly 20 includes a third switching transistor S3 and a fourth switching transistor S4, and the third switching assembly 20 includes a fifth switching transistor S5. The first terminals of the first switching transistor S1 and the second switching transistor S2 are both connected to the positive terminal of the first voltage source V1, the second terminal of the first switching transistor S1 is connected to the low-potential electrode of the power semiconductor device, and the second terminal of the second switching transistor S2 is connected to the control electrode of the power semiconductor device. The first terminals of the third switching transistor S3 and the fourth switching transistor S4 are both connected to the positive terminal of the second voltage source V2, the second terminal of the third switching transistor S3 is connected to the control electrode of the power semiconductor device, and the second terminal of the fourth switching transistor S4 is connected to the low-potential electrode of the power semiconductor device. The first terminal of the fifth switching transistor S5 is connected to the negative terminal of the second voltage source V2, and the second terminal of the fifth switching transistor S5 is connected to the low-potential electrode of the power semiconductor device.

[0082] Depending on the combination of different switching transistors, the power module 10 can output different voltage values. Table 6 shows the relationship between the switching transistor states and the output voltage of the power module 10 in this embodiment. As shown in Table 6, in this embodiment, by controlling different switching transistors to switch in combination, the power module 10 can output five different voltage values—-V1, 0V, V2, V1, and V1+V2—after passing through the switching assembly 20, so that the gate voltage of the power semiconductor device can be dynamically adjusted.

[0083] Table 6

[0084]

[0085] Figure 7 This is a schematic diagram of one embodiment of the control electrode voltage dynamic adjustment system provided in this application; as shown. Figure 7 As shown, the first switching assembly 20 includes a first switching transistor S1 and a second switching transistor S2, the second switching assembly 20 includes a third switching transistor S3 and a fourth switching transistor S4, and the third switching assembly 20 includes a fifth switching transistor S5. The first terminals of the first switching transistor S1 and the second switching transistor S2 are both connected to the positive terminal of the first voltage source V1, the second terminal of the first switching transistor S1 is connected to the low potential terminal of the power semiconductor device, and the second terminal of the second switching transistor S2 is connected to the control terminal of the power semiconductor device. The first terminals of the third switching transistor S3 and the fourth switching transistor S4 are both connected to the positive terminal of the second voltage source V2, the second terminal of the third switching transistor S3 is connected to the control terminal of the power semiconductor device, and the second terminal of the fourth switching transistor S4 is connected to the low potential terminal of the power semiconductor device. The first terminal of the fifth switching transistor S5 is connected to the negative terminal of the second voltage source V2, and the second terminal of the fifth switching transistor S5 is connected to the control terminal of the power semiconductor device.

[0086] Depending on the combination of different switching transistors, the power module 10 can output different voltage values. Table 7 shows the relationship between the switching transistor states and the output voltage of the power module 10 in this embodiment. As shown in Table 7, in this embodiment, by controlling different switching transistors to switch in combination, the power module 10 can output five different voltage values—-v1, -v2, -v1, -v2, 0V, and v1—after passing through the switching assembly 20, so that the gate voltage of the power semiconductor device can be dynamically adjusted.

[0087] Table 7

[0088]

[0089] In some embodiments, the control electrode voltage dynamic adjustment system has only one set of switching components 20, which includes two switching transistors.

[0090] Figure 8 This is a schematic diagram of one embodiment of the control electrode voltage dynamic adjustment system provided in this application; as shown. Figure 8 As shown, the first switching assembly 20 includes a first switching transistor S1, the second switching assembly 20 includes a second switching transistor S2, and the third switching assembly 20 includes a third switching transistor S3 and a fourth switching transistor S4. One end of the first switching transistor S1 is connected to the positive terminal of the first voltage source V1, and the other end of the first switching transistor S1 is connected to the control electrode of the power semiconductor device. One end of the second switching transistor S2 is connected to the negative terminal of the first voltage source, and the other end of the second switching transistor S2 is connected to the low-potential electrode of the power semiconductor device. One end of both the third switching transistor S3 and the fourth switching transistor S4 is connected to the negative terminal of the second voltage source V2, and the other end of the third switching transistor S3 is connected to the control electrode of the power semiconductor device. The other end of the fourth switching transistor S4 is connected to the low-potential electrode of the power semiconductor device.

[0091] Depending on the combination of different switching transistors, the power module 10 can output different voltage values. Table 8 shows the relationship between the switching transistor states and the output voltage of the power module 10 in this embodiment. As shown in Table 8, in this embodiment, by controlling different switching transistors to switch in combination, the power module 10 can output four different voltage values—v1, v1+v2, 0V, and -v2—after passing through the switching assembly 20, so that the gate voltage of the power semiconductor device can be dynamically adjusted.

[0092] Table 8

[0093]

[0094]

[0095] Figure 9 This is a schematic diagram of one embodiment of the control electrode voltage dynamic adjustment system provided in this application; as shown. Figure 9As shown, the first switching assembly 20 includes a first switching transistor S1 and a second switching transistor S2, the second switching assembly 20 includes a third switching transistor S3, and the third switching assembly 20 includes a fourth switching transistor S4. One end of the first switching transistor S1 and the second switching transistor S2 are both connected to the positive terminal of the first voltage source V1, the other end of the second switching transistor S2 is connected to the control electrode of the power semiconductor device, and the other end of the first switching transistor S1 is connected to the low-potential electrode of the power semiconductor device. One end of the third switching transistor S3 is connected to the negative terminal of the first voltage source and the low-potential electrode of the power semiconductor device. One end of the fourth switching transistor S4 is connected to the negative terminal of the second voltage source, and the other end of the fourth switching transistor S4 is connected to the control electrode of the power semiconductor device.

[0096] Depending on the combination of different switching transistors, the power module 10 can output different voltage values. Table 9 shows the relationship between the switching transistor states and the output voltage of the power module 10 in this embodiment. As shown in Table 9, in this embodiment, by controlling different switching transistors to switch in combination, the power module 10 can output four different voltage values—v1, 0V, -v2, and -v1-v2—after passing through the switching assembly 20, so that the gate voltage of the power semiconductor device can be dynamically adjusted.

[0097] Table 9

[0098]

[0099] The above description is merely an optional embodiment of this application and does not limit the patent scope of this application. Any equivalent structural transformations made based on the inventive concept of this application and the contents of the specification and drawings of this application, or direct / indirect applications in other related technical fields, are included within the patent protection scope of this application.

Claims

1. A system for dynamically adjusting the control electrode voltage, characterized in that, include: A power module (10) comprising at least two cascaded voltage sources; Multiple sets of switching components (20), each set of switching components (20) includes a first end and a second end, the second end of which is respectively connected to a power semiconductor device; The two ends of the power module (10) are respectively connected to the first end of a set of switching components (20), and the connection end between two adjacent voltage sources is connected to the first end of the set of switching components (20).

2. The control electrode voltage dynamic adjustment system according to claim 1, characterized in that, The positive terminal of the voltage source of the power module (10) is connected to the negative terminal of the preceding voltage source, and the negative terminal of the voltage source is connected to the positive terminal of the following voltage source.

3. The control electrode voltage dynamic adjustment system according to claim 1, characterized in that, The switching assembly (20) includes at least one switching transistor.

4. The control electrode voltage dynamic adjustment system according to claim 3, characterized in that, The switching transistor is one or more of the following: MOSFET, IGBT, or triode.

5. The control electrode voltage dynamic adjustment system according to claim 1, characterized in that, The power module (10) includes a first voltage source and a second voltage source; The positive terminal of the first voltage source is connected to the first terminal of the first switching assembly (20), the negative terminal of the first voltage source and the positive terminal of the second voltage source are both connected to the first terminal of the second switching assembly (20), the negative terminal of the second voltage source is connected to the first terminal of the third switching assembly (20), and the second terminals of the first switching assembly (20), the second switching assembly (20) and the third switching assembly (20) are all connected to the power semiconductor device.

6. The control electrode voltage dynamic adjustment system according to claim 1, characterized in that, At least one set of the switching assemblies (20) includes two switching transistors.

7. The control electrode voltage dynamic adjustment system according to claim 5, characterized in that, The first switching assembly (20) includes a first switching transistor and a second switching transistor; the second switching assembly (20) includes a third switching transistor and a fourth switching transistor; the third switching assembly (20) includes a fifth switching transistor and a sixth switching transistor; the first ends of the first switching transistor and the second switching transistor are both connected to the positive terminal of the first voltage source; the second end of the first switching transistor is connected to the low potential terminal of the power semiconductor device; the second end of the second switching transistor is connected to the control terminal of the power semiconductor device; the first ends of the third switching transistor and the fourth switching transistor are both connected to the positive terminal of the second voltage source; the second end of the third switching transistor is connected to the control terminal of the power semiconductor device; the second end of the fourth switching transistor is connected to the low potential terminal of the power semiconductor device; the first ends of the fifth switching transistor and the sixth switching transistor are both connected to the negative terminal of the second voltage source; the second end of the fifth switching transistor is connected to the control terminal of the power semiconductor device; the second end of the sixth switching transistor is connected to the low potential terminal of the power semiconductor device.

8. The control electrode voltage dynamic adjustment system according to claim 1, characterized in that, The sum of the positive voltage amplitudes of all the power module (10) voltage sources in series is less than the maximum withstand positive voltage between the control electrode and the low potential electrode of the power semiconductor device.

9. The control electrode voltage dynamic adjustment system according to claim 1, characterized in that, The absolute value of the sum of the negative voltage amplitudes of all the power modules (10) voltage sources in series is less than the absolute value of the highest withstand positive and negative voltages between the control electrode and the low potential electrode of the power semiconductor device.

10. The control electrode voltage dynamic adjustment system according to claim 1, characterized in that, The system also includes a control unit (30) which is connected to the control terminal of the switch assembly (20).

Images