Phase-modulated element structure and phase-modulated array structure

Abstract

The application relates to the field of wireless communication, in particular to a phase modulation and shaping unit structure and a phase modulation and shaping array structure. The phase modulation and shaping unit structure comprises a top metal layer, a first dielectric layer, a conducting layer, a second dielectric layer, a grounding layer, a third dielectric layer and a feed network layer which are sequentially stacked from top to bottom. The top metal layer comprises a center patch and four diagonal patches, and through the connection of PIN diodes and the design of the conducting layer, orthogonal and isolated +45° and -45° polarization regulation channels are formed. By controlling the on-off state of the diodes, each polarization channel can independently generate four reflection phases of 0°, 90°, 180° and 270°, realizing 2bit phase regulation. By introducing the conducting layer and the double-center patch structure, the application realizes double-polarization 2bit high-precision phase modulation in a single unit structure, significantly improves the beam shaping precision and reduces the sidelobe. The multi-layer integrated design ensures the performance while being compact in structure, easy to process and easy to integrate into a large-scale array.

Description

Technical Field

[0001] This utility model relates to the field of wireless communication, and in particular to a phase modulation shaping unit structure and a phase modulation shaping array structure. Background Technology

[0002] In the field of wireless communication, especially for sixth-generation mobile communication technology, massive MIMO is one of the key technologies for achieving high capacity and high coverage. Traditional phase-modulated arrays typically use digital channels or phase shifters to achieve phase modulation, thereby performing beamforming. However, with the increase in antenna size, the number of radio frequency channels has surged, bringing huge cost and power consumption challenges.

[0003] In recent years, smart metasurface technology has attracted widespread attention as a potential low-cost solution. Smart metasurfaces consist of periodically arranged subwavelength units. By integrating tunable components in each unit, the phase, amplitude, and other characteristics of electromagnetic waves can be dynamically controlled, thereby achieving beamforming and reducing reliance on expensive digital channels.

[0004] However, the performance of existing intelligent metasurface phase modulation units is limited by phase modulation accuracy and polarization method. Currently, the most common solutions in the industry are dual-polarized 1-bit phase modulation units or 2-bit single-polarized phase modulation units. 1-bit phase modulation units suffer from high beam sidelobes and poor modulation accuracy due to low phase quantization accuracy; while 2-bit phase modulation units can significantly improve beamforming capability, they often have a narrow operating bandwidth, and implementing a dual-polarization design makes the unit structure extremely complex, doubling the number of adjustable components, posing significant challenges in structural design and control. Utility Model Content

[0005] This application provides a phase modulation shaping unit structure and a phase modulation shaping array structure to solve the defects of traditional intelligent metasurface phase modulation units whose performance is limited by phase modulation accuracy and polarization mode, so as to achieve high-precision phase modulation and independent dual polarization control at the same time, and the structure is compact and easy to integrate.

[0006] One embodiment of this application provides a phase modulation shaping unit structure, including a top metal layer, a first dielectric layer, a conductive layer, a second dielectric layer, a ground layer, a third dielectric layer, and a power supply network layer stacked sequentially from top to bottom.

[0007] The top metal layer includes a first central patch, a first diagonal patch, a second diagonal patch, a third diagonal patch, and a fourth diagonal patch. The first diagonal patch and the second diagonal patch are symmetrically arranged on both sides of the first central patch along a first direction, and the third diagonal patch and the fourth diagonal patch are symmetrically arranged on both sides of the first central patch along a second direction.

[0008] The first center patch is connected to the ground layer. The first diagonal patch, the second diagonal patch, the third diagonal patch, and the fourth diagonal patch are respectively connected to the feed network layer. The first diagonal patch and the second diagonal patch are respectively connected to the first center patch through diodes. The third diagonal patch is connected to the second center patch through diodes. The fourth diagonal patch is connected to the third center patch through diodes. The second center patch and the third center patch are respectively connected to the conductive layer and connected to the feed network layer through the conductive layer.

[0009] In one embodiment, the first direction and the second direction are perpendicular, so that the connecting lines of the first diagonal patch and the second diagonal patch and the connecting lines of the third diagonal patch and the fourth diagonal patch form a cross-shaped structure.

[0010] In one embodiment, the first dielectric layer, the second dielectric layer, and the third dielectric layer are all insulating dielectric layers. The first dielectric layer is formed as the printed substrate of the top metal layer, the second dielectric layer is formed as the printed substrate of the conductive layer and the ground layer, and the third dielectric layer is formed as the printed substrate of the power supply network layer.

[0011] The conductive layer is a rectangular metal patch used to separate surface currents with different polarization directions in the top metal layer.

[0012] The grounding layer is printed with metal and is used to reflect electromagnetic waves and provide a DC reference ground.

[0013] There is a voltage difference between the power supply network layer and the ground layer, which is used to provide a bias voltage for the top metal layer.

[0014] In one embodiment, the first center patch is connected to the ground layer through a first metal via. The center of the conductive layer is provided with a first through hole. The inner diameter of the first through hole is larger than the outer diameter of the first metal via. The first metal via passes through the first dielectric layer, the first through hole, and the second dielectric layer in sequence.

[0015] In one embodiment, a plurality of metal microstrip lines are formed on the power supply network layer. The first diagonal patch is connected to the metal microstrip lines of the power supply network layer through a second metal via, the second diagonal patch is connected to the metal microstrip lines of the power supply network layer through a third metal via, the third diagonal patch is connected to the metal microstrip lines of the power supply network layer through a fourth metal via, and the fourth diagonal patch is connected to the metal microstrip lines of the power supply network layer through a fifth metal via.

[0016] The grounding layer has a plurality of second through holes distributed thereon. The inner diameter of the second through holes is larger than the outer diameter of the second metal via, the third metal via, the fourth metal via, and the fifth metal via. The second metal via, the third metal via, the fourth metal via, and the fifth metal via all pass through the first dielectric layer, the conductive layer, the second dielectric layer, the second through hole, and the third dielectric layer in sequence.

[0017] In one embodiment, the second center patch is connected to the conductive layer through a sixth metal via, and is also connected to the power supply network layer through the conductive layer; the third center patch is connected to the conductive layer through a seventh metal via, and is also connected to the power supply network layer through the conductive layer; a plurality of third vias are also distributed on the ground layer, the inner diameter of the third vias being larger than the outer diameters of the sixth and seventh metal vias, and the sixth and seventh metal vias respectively pass through the first dielectric layer, the conductive layer, the second dielectric layer, the third vias, and the third dielectric layer in sequence.

[0018] In one embodiment, the first diagonal patch and the second diagonal patch are configured to have the same width and different lengths, and the third diagonal patch and the fourth diagonal patch are also configured to have the same width and different lengths.

[0019] In one embodiment, the length range of the first central patch is: ~ Width range is ~ The length range of the second center patch and the third center patch is... ~ Width range is ~ The length range of the first diagonal patch and the third diagonal patch is... ~ The length range of the second diagonal patch and the fourth diagonal patch is ~ The width range of the first diagonal patch, the second diagonal patch, the third diagonal patch, and the fourth diagonal patch is... ~ ,in The operating frequency wavelength of the phase-modulation shaping unit structure.

[0020] Another embodiment of this application also provides a phase-modulation shaping array structure, including a plurality of phase-modulation shaping unit structures as described in any of the above embodiments, wherein the plurality of phase-modulation shaping unit structures are arranged in a two-dimensional periodic pattern.

[0021] In one embodiment, the range of the arrangement period of the multiple phase modulation shaping unit structures is: ~ .

[0022] The phase-modulation array structure provided in this application utilizes the on / off combinations of PIN diodes to achieve 2-bit independent phase modulation of two polarization waves. When an electromagnetic wave is incident, a bias voltage is applied to the corresponding diagonal patches through the feed network layer to control the ON / OFF state of each PIN diode. For +45° polarization, the four state combinations of the two diodes can change the surface current path in that direction, generating four reflection phases: 0°, 90°, 180°, and 270°. Meanwhile, the -45° polarization wave mainly flows through a dedicated path formed by the second and third center patches and the conductive layer. By controlling the diode states along this path, the same four-phase states can be independently generated, and the presence of the conductive layer effectively isolates the current coupling between the two polarizations, avoiding mutual interference. This application achieves high-precision 2-bit dual-polarization phase modulation within a single unit structure by introducing a conductive layer and a dual-center patch structure, which significantly improves beamforming accuracy and reduces sidelobes. Its multi-layer integrated design ensures performance while being compact, easy to process and integrate into large-scale arrays, providing a low-cost and high-efficiency beam control solution for smart metasurfaces. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 This is a top view schematic diagram of the phase modulation shaping unit structure provided in the embodiments of this application.

[0025] Figure 2 yes Figure 1 A schematic diagram of the AA cross-section.

[0026] Figure 3 yes Figure 1 A schematic diagram of the BB cross-section.

[0027] Figure 4 This is a schematic diagram of the reflection coefficient amplitude curve of +45° polarization in an embodiment of this application.

[0028] Figure 5 This is a schematic diagram of the reflection coefficient phase curve of the +45° polarization embodiment of this application.

[0029] Figure 6This is a schematic diagram of the reflection coefficient amplitude curve of -45° polarization in an embodiment of this application.

[0030] Figure 7 This is a schematic diagram of the reflection coefficient phase curve of a -45° polarized embodiment of this application.

[0031] Figure 8 This is a planar schematic diagram of the phase-modulated shading array structure provided in the embodiments of this application.

[0032] Figure 9 This is the main lobe pattern of the phase-modulated shaped array structure provided in this application for a 30° target reflection beam with ±45° dual-polarized plane electromagnetic waves incident perpendicularly.

[0033] Figure 10 This is the main lobe pattern of the dual-polarized component of the phase-modulated shaped array structure provided in this application for perpendicular incidence of a ±45° dual-polarized plane electromagnetic wave.

[0034] Reference numerals: 1. Top metal layer; 11. First center patch; 12. First diagonal patch; 13. Second diagonal patch; 14. Third diagonal patch; 15. Fourth diagonal patch; 16. Second center patch; 17. Third center patch; 2. First dielectric layer; 3. Conductive layer; 4. Second dielectric layer; 5. Ground layer; 6. Third dielectric layer; 7. Power supply network layer; 81. First metal via; 82. Second metal via; 83. Third metal via; 84. Fourth metal via; 85. Fifth metal via; 86. Sixth metal via; 87. Seventh metal via. Detailed Implementation

[0035] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0036] The following is combined with Figures 1 to 10 This application describes the phase modulation shaping unit structure and the phase modulation shaping array structure.

[0037] One embodiment of this application provides a phase modulation shaping unit structure, combined with... Figure 1 and Figure 2As shown, the phase-modulation shaping unit structure includes a top metal layer 1, a first dielectric layer 2, a conductive layer 3, a second dielectric layer 4, a ground layer 5, a third dielectric layer 6, and a feed network layer 7, stacked sequentially from top to bottom. The top metal layer 1 includes a first central patch 11, a first diagonal patch 12, a second diagonal patch 13, a third diagonal patch 14, and a fourth diagonal patch 15. The first diagonal patch 12 and the second diagonal patch 13 are symmetrically arranged on both sides of the first central patch 11 along a first direction, and the third diagonal patch 14 and the fourth diagonal patch 15 are symmetrically arranged on both sides of the first central patch 11 along a second direction. The first center patch 11 is connected to the ground layer 5. The first diagonal patches 12, the second diagonal patches 13, the third diagonal patches 14, and the fourth diagonal patches 15 are respectively connected to the feed network layer 7. The first diagonal patches 12 and the second diagonal patches 13 are respectively connected to the first center patch 11 through diodes. The third diagonal patch 14 is connected to the second center patch 16 through diodes. The fourth diagonal patch 15 is connected to the third center patch 17 through diodes. The second center patch 16 and the third center patch 17 are respectively connected to the conductive layer 3 and are connected to the feed network layer 7 through the conductive layer 3.

[0038] It is understood that the phase-modulation shaping unit structure of this embodiment adopts a compact multi-layer stacked design, specifically including, from top to bottom, a top metal layer 1, a first dielectric layer 2, a conductive layer 3, a second dielectric layer 4, a ground layer 5, a third dielectric layer 6, and a feed network layer 7. The top metal layer 1 includes a first central patch 11 and four diagonal patches arranged around it: the first diagonal patch 12, the second diagonal patch 13 along a first direction (e.g., ... Figure 1 The third diagonal patch 14 and the fourth diagonal patch 15 are symmetrically distributed along a second direction perpendicular to it (as shown in the +45° direction). Figure 1 The four diagonal patches are symmetrically distributed (in the -45° direction shown). The first center patch 11 is directly connected to the ground layer 5 through a metal via, serving as a current reference point. The four diagonal patches are connected to the bottom feed network layer 7 through independent metal vias to receive bias voltage. Crucially, the first diagonal patch 12 and the second diagonal patch 13 are connected to the first center patch 11 through PIN diodes, forming a +45° polarization control path. The third diagonal patch 14 and the fourth diagonal patch 15 are connected to the second center patch 16 and the third center patch 17 through PIN diodes, respectively. The latter are then connected to the middle conductive layer 3 through vias, forming an independent -45° polarization control channel.

[0039] The phase-shaping unit structure utilizes the on / off combinations of PIN diodes to achieve 2-bit independent phase modulation of two polarization waves. When an electromagnetic wave is incident, a bias voltage is applied to the corresponding diagonal patches through the feed network layer 7, controlling the ON / OFF state of each PIN diode. For +45° polarization, the four state combinations of the two diodes (FF, FO, OF, OO) can change the surface current path in that direction, generating four reflection phases: 0°, 90°, 180°, and 270°. Meanwhile, the -45° polarization wave mainly flows through a dedicated path formed by the second center patch 16, the third center patch 17, and the conductive layer 3. By controlling the diode states along this path, the same four-phase states can be independently generated. The presence of the conductive layer 3 effectively isolates the current coupling between the two polarizations, avoiding mutual interference.

[0040] Compared to the problems of insufficient 1-bit precision in traditional dual-polarization or the complexity and difficulty in independent control of 2-bit single-polarization structures, this embodiment achieves high-precision 2-bit phase modulation of dual-polarization within a single unit structure by introducing a conductive layer 3 and a dual-center patch structure. This significantly improves beamforming accuracy and reduces sidelobes. Its multi-layer integrated design ensures performance while being compact, easy to process and integrate into large-scale arrays, providing a low-cost and high-efficiency beam control solution for smart metasurfaces.

[0041] In one embodiment of the phase modulation shaping unit structure of this application, see again Figure 1 As shown, the first direction and the second direction are perpendicular, so that the connecting lines of the first diagonal patch 12 and the second diagonal patch 13 and the connecting lines of the third diagonal patch 14 and the fourth diagonal patch 15 form a cross structure.

[0042] It is understood that the spatial architecture of the top metal patch 1 in this embodiment is designed by layout design as follows: the first diagonal patch 12 and the second diagonal patch 13 are along... Figure 1 The elements are symmetrically distributed on both sides of the first central patch 11 at a +45° angle, and the connecting line between them forms the first spatial diagonal; at the same time, the third diagonal patch 14 and the fourth diagonal patch 15 are along... Figure 1 The components are symmetrically arranged on both sides of the first central patch 11 at a -45° angle, forming a second spatial diagonal. By setting these two connecting lines as a mutually perpendicular cross configuration, a strictly orthogonal physical channel is formed in the unit structure plane, so that the branch formed by the first diagonal patch 12 and the second diagonal patch 13 is completely decoupled from the branch formed by the third diagonal patch 14 and the fourth diagonal patch 15 in space.

[0043] The orthogonal cross-shaped architecture allows for the excitation of independent current paths when electromagnetic waves of different polarization directions are incident: the +45° polarized wave primarily excites the patch group in the first direction, while the -45° polarized wave primarily excites the patch group in the second direction perpendicular to it. This inherent orthogonality of the structure, combined with the integrated PIN diode control in each branch, effectively avoids energy coupling and mutual interference between the two polarization modes, enabling independent operation of dual polarizations. This allows for independent and precise 2-bit control of the reflection phase in the two orthogonal polarization directions, significantly improving the beamforming flexibility and signal coverage quality of the smart metasurface in complex communication scenarios.

[0044] In one embodiment, the first dielectric layer 2, the second dielectric layer 4, and the third dielectric layer 6 are all insulating dielectric layers. The first dielectric layer 2 is formed as the printed substrate of the top metal layer 1, the second dielectric layer 4 is formed as the printed substrate of the conductive layer 3 and the ground layer 5, and the third dielectric layer 6 is formed as the printed substrate of the feed network layer 7. The conductive layer 3 is a rectangular metal patch used to separate surface currents of different polarization directions in the top metal layer 1. The ground layer 5 is a printed metal layer used to reflect electromagnetic waves and provide a DC reference ground. A voltage difference exists between the feed network layer 7 and the ground layer 5 to provide a bias voltage for the top metal layer 1.

[0045] It is understandable that the first dielectric layer 2, the second dielectric layer 4, and the third dielectric layer 6 are insulating dielectric layers, which can be F4B dielectric boards, used to achieve structural support and electrical isolation. Specifically, the first dielectric layer 2 serves as the printed substrate for the top metal layer 1, directly supporting the core radiating structure, including the center patch and diagonal patches; the second dielectric layer 4 simultaneously acts as a shared substrate for the conductive layer 3 and the ground layer 5, ensuring the precise relative position of the intermediate functional layer and the ground layer 5; and the third dielectric layer 6, located at the bottom, is the carrier of the power supply network layer 7. This layered design of the phase-modulation shaping unit structure not only constitutes the physical skeleton of the unit, but the selected insulating dielectric layers also effectively isolate the various metal layers, avoiding unnecessary electrical short circuits and electromagnetic coupling, and providing stable mechanical support and electromagnetic environment for the entire unit.

[0046] In this embodiment, the conductive layer 3, ground layer 5, and feed network layer 7 work together to realize the core electromagnetic function and reconfigurable characteristics of the structural unit. The conductive layer 3 can be a rectangular metal patch, its core function being to physically separate the surface current paths for +45° and -45° polarization directions, thereby avoiding polarization conversion effects at the source and ensuring the independence of dual-polarization control. The ground layer 5, on the one hand, acts as a complete metal reflector, efficiently reflecting electromagnetic wave energy back, forming a reflective metasurface operating mode; on the other hand, it provides a unified DC reference ground (0V potential) for the entire structural unit. The feed network layer 7 can establish a controllable voltage difference between itself and the ground layer 5 through its metal microstrip lines. This voltage difference is precisely applied to the corresponding patch and PIN diode at the top through a metal via system, thereby controlling the diode's on / off state. This embodiment achieves flexible and precise reconfiguration of the phase state of the top-level radiating unit through independent voltage control at the bottom layer. Simultaneously, the feed network is effectively shielded by the ground layer, and its introduced metal traces do not interfere with the unit's radiation performance, ensuring a high degree of consistency between design simulation and actual performance.

[0047] In one embodiment, combined Figure 2 and Figure 3 As shown, the first center patch 11 is connected to the ground layer 5 through the first metal via 81. The center of the conductive layer 3 is provided with a first through hole. The inner diameter of the first through hole is larger than the outer diameter of the first metal via 81. The first metal via 81 passes through the first dielectric layer 2, the first through hole, and the second dielectric layer 4 in sequence.

[0048] Multiple metal microstrip lines are formed on the feed network layer 7. The first diagonal patch 12 is connected to the metal microstrip line of the feed network layer 7 through the second metal via 82. The second diagonal patch 13 is connected to the metal microstrip line of the feed network layer 7 through the third metal via 83. The third diagonal patch 14 is connected to the metal microstrip line of the feed network layer 7 through the fourth metal via 84. The fourth diagonal patch 15 is connected to the metal microstrip line of the feed network layer 7 through the fifth metal via 85. Multiple second vias are distributed on the ground layer 5. The inner diameter of the second via is larger than the outer diameter of the second metal via 82, the third metal via 83, the fourth metal via 84, and the fifth metal via 85. The second metal via 82, the third metal via 83, the fourth metal via 84, and the fifth metal via 85 pass through the first dielectric layer 2, the conductive layer 3, the second dielectric layer 4, the second via, and the third dielectric layer 6, respectively.

[0049] The second center patch 16 is connected to the conductive layer 3 through the sixth metal via 86, and is also connected to the feed network layer 7 through the conductive layer 3; the third center patch 17 is connected to the conductive layer 3 through the seventh metal via 87, and is also connected to the feed network layer 7 through the conductive layer 3; multiple third vias are also distributed on the ground layer 5, the inner diameter of the third vias is larger than the outer diameter of the sixth metal via 86 and the seventh metal via 87, and the sixth metal via 86 and the seventh metal via 87 pass through the first dielectric layer 2, the conductive layer 3, the second dielectric layer 4, the third via and the third dielectric layer 6 in sequence.

[0050] It is understood that this embodiment constructs a sophisticated vertical interconnect system that achieves electrical connection and isolation between functional layers through multiple sets of metal vias. It mainly includes three key paths: First, the first center patch 11 directly penetrates the insulating vias (first vias) reserved in the center of each dielectric layer and the conductive layer 3 through the first metal via 81 to establish a DC reference ground connection with the ground layer 5; Second, the four diagonal patches penetrate the corresponding insulating vias (second vias) on the conductive layer 3 and the ground layer 4 through the second metal via 82, the third metal via 83, the fourth metal via 84, and the fifth metal via 85 respectively, and finally connect to the independent metal microstrip line of the bottom feed network layer 7; At the same time, the second center patch 16 and the third center patch 17 establish a vertical interconnect between the top metal layer 1 and the conductive layer 3 through the sixth metal via 86 and the seventh metal via 87. After the sixth metal via 86 and the seventh metal via 87 are connected to the conductive layer 3, they pass through the corresponding insulating vias (third vias) on the ground layer 4 and finally connect to the independent metal microstrip line of the bottom feed network layer 7. This layered via design in this embodiment ensures effective transmission of DC bias voltage and high-frequency signals while achieving electrical isolation between conductive layers by strictly controlling the relationship between the inner and outer diameters of the vias between different metal layers.

[0051] It is important to understand that the exclusive path of the first metal via 81 provides a stable ground for the first center patch 11, forming a phase reference for +45° polarization control. The cooperation of the second metal via 82, third metal via 83, fourth metal via 84, and fifth metal via 85 with the insulating vias in the ground layer 5 effectively blocks interference from the feed network to the radiation field while achieving bias voltage transmission, ensuring the purity of the unit's electromagnetic performance. The sixth metal via 86 and the seventh metal via 87 electrically integrate the second center patch 16 and the third center patch 17 with the conductive layer 3, constructing a complete -45° polarization control channel. Ultimately, this achieves physical isolation of the dual polarization control path, concealed deployment of the bias network, and optimization of unit performance, providing a reliable hardware foundation for high-precision beamforming.

[0052] In one embodiment, the first diagonal patch 12 and the second diagonal patch 13 are configured to have the same width and different lengths, and the third diagonal patch 14 and the fourth diagonal patch 15 are also configured to have the same width and different lengths.

[0053] It is understood that this embodiment constructs an efficient phase control structure through the differentiated size design of the diagonal patches. The first diagonal patch 12 and the second diagonal patch 13, arranged along the first direction (e.g., the +45° direction), are set to have the same width but different lengths; similarly, the third diagonal patch 14 and the fourth diagonal patch 15, arranged along the second direction (e.g., the -45° direction), also adopt the same width and different lengths. This symmetrical design of "equal width and different lengths" makes the current path formed by the two symmetrical diagonal patches and the first central patch 11 (or through the second central patch 16 and the third central patch 17) in the same polarization direction have different electrical lengths.

[0054] When two PIN diodes in the same polarization direction are in different on / off state combinations, the current selectively flows through patch paths of different lengths. The difference in patch length directly alters the equivalent electrical length of the path, resulting in four different reflection phase states macroscopically. This design transforms the physical size difference of diagonal patches into a precise phase difference, which is the core mechanism for achieving 2-bit phase modulation (generating four phases: 0°, 90°, 180°, and 270°). Without increasing structural complexity or the number of diodes, a simple geometric change doubles the phase quantization accuracy, significantly improving beamforming accuracy and effectively suppressing sidelobe levels.

[0055] Specifically, in one example, the length range of the first central patch 11 is [missing information]. ~ Width range is ~ The length range of the second center patch 16 and the third center patch 17 is as follows: ~ Width range is ~ The length range of the first diagonal patch 12 and the third diagonal patch 14 is as follows: ~ The length range of the second diagonal patch 13 and the fourth diagonal patch 15 is as follows: ~ The width range of the first diagonal patch 12, the second diagonal patch 13, the third diagonal patch 14, and the fourth diagonal patch 15 is as follows: ~ The range of values ​​for the radius of the metal via is: ~ The radius of the first via at the center of conductive layer 2 and the radii of the second and third vias on ground layer 5 are within the range of... ~ The conductive layer 3 has the same dimensions as the first central patch 11. Both dielectric layers are insulating dielectric substrates with a dielectric constant ranging from 2.2 to 2.8. The thickness of the first dielectric layer 2 ranges from [value missing]. ~ The thickness of the second dielectric layer 4 ranges from [value missing]. ~ The thickness of the third dielectric layer 6 ranges from [value missing]. ~ ,in The operating frequency wavelength of the phase-modulation shaping unit structure.

[0056] Understandably, in this example, the size design of the first center patch 11 establishes the basic electrical dimensions of the cell structure; the second center patch 16 and the third center patch 17 use shorter lengths than the first center patch 11 to serve specific current regulation; the four diagonal patches achieve phase quantization through differentiated lengths and uniform widths; the vertical interconnect system balances mechanical strength and high-frequency performance by limiting the radius of metal vias and the radius of the center vias in the conductive layers; all dielectric layers use low-loss insulating substrates with dielectric constants between 2.2 and 2.8, and the electromagnetic coupling strength is regulated by precisely controlling the thickness of each layer. This wavelength-calibrated parameterization process ensures that the cell structure achieves optimal electromagnetic response within the target frequency band. By precisely controlling the patch size, the accuracy of 2-bit phase modulation and the uniform spacing of the four phase states are ensured. Through the optimized combination of dielectric layer material and thickness, surface waves and resonant modes are effectively suppressed while achieving the required electromagnetic wave modulation, thereby broadening the operating bandwidth. All dimensions and material parameters are designed based on λ0, giving the unit structure excellent frequency scaling characteristics. By simply adjusting all dimensions proportionally, the entire design can be ported to different operating frequency bands, greatly enhancing the portability and application flexibility of the structural design. This provides a universal design paradigm for the application of intelligent metasurfaces in different frequency bands and devices.

[0057] The following simulation experiments further illustrate the phase modulation shaping unit structure of this application.

[0058] Unit Simulation: The structural parameters of the phase-modulation shaping unit for the metasurface were optimized using electromagnetic simulation software, and a phase-modulation unit with 2-bit independent polarization control was designed. Simulation results are as follows: Figures 4 to 7 As shown, Figure 4 This diagram illustrates the amplitude curve of the reflection coefficient for +45° polarization. Figure 5 This diagram illustrates the phase curve of the reflection coefficient for +45° polarization. Figure 6 This diagram illustrates the amplitude curve of the reflection coefficient for -45° polarization. Figure 7 A schematic diagram of the reflection coefficient phase curve for -45° polarization is shown. Simulation results show that in the 6.4~6.8 GHz frequency band, the reflection coefficient amplitudes for +45° and -45° polarization ( Figure 4 and Figure 6 The values ​​are all above -5dB, indicating that the phase-modulation shaping unit structure has the characteristic of reflecting electromagnetic waves of two polarizations. And based on... Figure 5 and Figure 7 The schematic reflection phase curves show that different combinations of ON / OFF states (FF, FO, OF, OO) of the unit diode correspond to four equal-phase-interval reflection phases (0°, 90°, 180°, 270°), indicating that the phase modulation shaping unit structure has good 2-bit phase modulation capability in the frequency band.

[0059] Another embodiment of this application also provides a phase modulation and shaping array structure, including a plurality of phase modulation and shaping unit structures as described in any of the above embodiments, see [link to relevant documentation]. Figure 8 As shown, multiple phase-modulation shaping units are arranged in a two-dimensional periodic pattern, with the period ranging from [value missing]. ~ .

[0060] It is understood that the phase-modulation shaping array structure in this embodiment uses the aforementioned phase-modulation shaping unit structure with independent dual-polarization 2-bit phase modulation capability as the basic radiating element, and arranges them on a large scale and periodically on a two-dimensional plane to form a macroscopic intelligent metasurface. In specific implementation, each unit follows a strict spatial period (its value is usually within...). ~ The units are arranged at equal intervals in the row and column directions to form a regular planar array. Each unit is controlled by its underlying independent power supply network, so that thousands or even tens of thousands of units in the array can receive a unified control signal and be set to their respective required phase states according to the beamforming algorithm.

[0061] It's important to understand that by independently assigning a specific reflection phase to each element in the array, the entire metasurface can precisely reshape the wavefront of incident electromagnetic waves. This allows for the dynamic generation of directional reflected beams, enabling flexible beam scanning, multi-beam generation, or shaping of specific beamforms. The arrangement period is limited to subwavelength scales (less than...). This design aims to satisfy the "grating lobe suppression" condition in array theory, ensuring that all radiated energy is concentrated in the preset main beam direction and avoiding energy dispersion to unwanted sidelobes, thereby greatly improving antenna gain and beam control efficiency. This array-based design in this embodiment allows the characteristics of originally microscopic units to be displayed on a macroscopic scale, providing a crucial hardware foundation for realizing the high-gain, reconfigurable intelligent reflectors required for future 6G communication.

[0062] The phase-modulation shaped array structure of this application will be further explained below with reference to specific simulation experiments.

[0063] Array simulation: Multiple phase-modulated beamforming unit structures are arranged periodically on a two-dimensional plane to expand into an array. Based on the incident wave direction and the target outgoing beam direction, the corresponding phase matrix is ​​calculated. Each unit is set to operate in accordance with the phase. The beamforming performance of the phase-modulated beamforming array structure is verified by electromagnetic simulation.

[0064] Figure 9 The diagram illustrates the main lobe pattern of the reflected beam from a 30° target with a phase-modulated shaped array structure and a ±45° dual-polarized plane electromagnetic wave incident perpendicularly. (See diagram for example.) Figure 9 As shown, when ±45° dual-polarized plane electromagnetic waves are incident perpendicularly on the array, by configuring a unified phase matrix pointing to the 30° target direction for all units, the simulated far-field radiation pattern clearly shows that its main lobe peak is precisely located at the 30° azimuth. This result directly confirms that the array can coordinate the energy of the incident dual-polarized electromagnetic waves to the preset physical space direction, and has the basic beam deflection and shaping capabilities as a smart metasurface.

[0065] To further demonstrate its advanced control performance, Figure 10 It presents a more complex dual-polar independent shaping scene. Figure 10 The simulation illustrates the main lobe pattern of the dual-polarized components of a phase-modulated beamforming array structure for a ±45° dual-polarized plane electromagnetic wave incident perpendicularly. In this simulation, two different target reflection beam directions were set at 30° and 45° for the incident +45° and -45° polarized waves, respectively. The simulation results successfully show that the main lobe of the +45° polarized component of the outgoing wave appears at 30°, while the main lobe of the -45° polarized component is independently located at 45°. This result verifies the core advantage of the phase-modulated beamforming array structure proposed in this application: it can not only achieve beam deflection, but also, through the separate dual-polarization control channels within the unit, perform completely independent beamforming operations on electromagnetic waves with two orthogonal polarization directions, thus demonstrating its enormous application potential in advanced communication scenarios such as multi-user access and polarization multiplexing.

[0066] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A phase modulation shaping unit structure, characterized in that, It includes a top metal layer (1), a first dielectric layer (2), a conductive layer (3), a second dielectric layer (4), a ground layer (5), a third dielectric layer (6), and a power supply network layer (7) stacked from top to bottom. The top metal layer (1) includes a first central patch (11), a first diagonal patch (12), a second diagonal patch (13), a third diagonal patch (14), and a fourth diagonal patch (15). The first diagonal patch (12) and the second diagonal patch (13) are symmetrically arranged on both sides of the first central patch (11) along a first direction, and the third diagonal patch (14) and the fourth diagonal patch (15) are symmetrically arranged on both sides of the first central patch (11) along a second direction. The first center patch (11) is connected to the ground layer (5). The first diagonal patch (12), the second diagonal patch (13), the third diagonal patch (14), and the fourth diagonal patch (15) are respectively connected to the feed network layer (7). The first diagonal patch (12) and the second diagonal patch (13) are respectively connected to the first center patch (11) through diodes. The third diagonal patch (14) is connected to the second center patch (16) through diodes. The fourth diagonal patch (15) is connected to the third center patch (17) through diodes. The second center patch (16) and the third center patch (17) are respectively connected to the conductive layer (3) and connected to the feed network layer (7) through the conductive layer (3).

2. The phase modulation shaping unit structure according to claim 1, characterized in that, The first direction and the second direction are perpendicular to each other, so that the connecting line between the first diagonal patch (12) and the second diagonal patch (13) and the connecting line between the third diagonal patch (14) and the fourth diagonal patch (15) form a cross structure.

3. The phase modulation shaping unit structure according to claim 1, characterized in that, The first dielectric layer (2), the second dielectric layer (4) and the third dielectric layer (6) are all insulating dielectric layers. The first dielectric layer (2) is formed as the printed substrate of the top metal layer (1), the second dielectric layer (4) is formed as the printed substrate of the conductive layer (3) and the ground layer (5), and the third dielectric layer (6) is formed as the printed substrate of the power supply network layer (7). The conductive layer (3) is a rectangular metal patch used to separate the surface currents of the top metal layer (1) in different polarization directions; The grounding layer (5) is printed with metal and is used to reflect electromagnetic waves and provide a DC reference ground; There is a voltage difference between the power supply network layer (7) and the ground layer (5) to provide a bias voltage for the top metal layer (1).

4. The phase modulation shaping unit structure according to claim 3, characterized in that, The first center patch (11) is connected to the ground layer (5) through the first metal via (81). The center of the conductive layer (3) is provided with a first through hole. The inner diameter of the first through hole is larger than the outer diameter of the first metal via (81). The first metal via (81) passes through the first dielectric layer (2), the first through hole, and the second dielectric layer (4) in sequence.

5. The phase modulation shaping unit structure according to claim 3, characterized in that, Multiple metal microstrip lines are formed on the power supply network layer (7). The first diagonal patch (12) is connected to the metal microstrip line of the power supply network layer (7) through the second metal via (82). The second diagonal patch (13) is connected to the metal microstrip line of the power supply network layer (7) through the third metal via (83). The third diagonal patch (14) is connected to the metal microstrip line of the power supply network layer (7) through the fourth metal via (84). The fourth diagonal patch (15) is connected to the metal microstrip line of the power supply network layer (7) through the fifth metal via (85). The grounding layer (5) is distributed with a plurality of second through holes. The inner diameter of the second through holes is larger than the outer diameter of the second metal via (82), the third metal via (83), the fourth metal via (84), and the fifth metal via (85). The second metal via (82), the third metal via (83), the fourth metal via (84), and the fifth metal via (85) all pass through the first dielectric layer (2), the conductive layer (3), the second dielectric layer (4), the second through hole, and the third dielectric layer (6) in sequence.

6. The phase modulation shaping unit structure according to claim 5, characterized in that, The second center patch (16) is connected to the conductive layer (3) through the sixth metal via (86) and is connected to the power supply network layer (7) through the conductive layer (3); the third center patch (17) is connected to the conductive layer (3) through the seventh metal via (87) and is connected to the power supply network layer (7) through the conductive layer (3). The grounding layer (5) is also distributed with a plurality of third through holes. The inner diameter of the third through holes is larger than the outer diameter of the sixth metal via (86) and the seventh metal via (87). The sixth metal via (86) and the seventh metal via (87) pass through the first dielectric layer (2), the conductive layer (3), the second dielectric layer (4), the third through hole and the third dielectric layer (6) in sequence.

7. The phase modulation shaping unit structure according to any one of claims 1 to 6, characterized in that, The first diagonal patch (12) and the second diagonal patch (13) are configured to have the same width and different lengths, and the third diagonal patch (14) and the fourth diagonal patch (15) are also configured to have the same width and different lengths.

8. The phase modulation shaping unit structure according to claim 7, characterized in that, The length range of the first center patch (11) is ~ Width range is ~ The length range of the second center patch (16) and the third center patch (17) is as follows: ~ Width range is ~ The length range of the first diagonal patch (12) and the third diagonal patch (14) is as follows: ~ The length range of the second diagonal patch (13) and the fourth diagonal patch (15) is... ~ The width range of the first diagonal patch (12), the second diagonal patch (13), the third diagonal patch (14), and the fourth diagonal patch (15) is as follows: ~ ,in The operating frequency wavelength of the phase-modulation shaping unit structure.

9. A phase-modulated shaped array structure, characterized in that, It includes multiple phase-modulation shaping unit structures as described in any one of claims 1 to 8, wherein the multiple phase-modulation shaping unit structures are arranged in a two-dimensional periodic pattern.

10. The phase-modulation shaping array structure according to claim 9, characterized in that, The range of values ​​for the arrangement period of multiple phase-modulation shaping unit structures is: ~ .

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