Three-electrode semiconductor igniter tip

Abstract

The utility model discloses a three electrode semiconductor ignition electric mouth, including shell electrode, the coaxial setting of center electrode is arranged at the center of shell electrode, the first end of center electrode is externally provided with high temperature porcelain pipe, the external sleeve of high temperature porcelain pipe is provided with leading arc electrode, and the cavity is left between leading arc electrode and shell electrode, the lateral wall on the cavity is provided with the heat dissipation hole that communicates with the cavity, the external sleeve of center electrode is provided with the temperature -resistant insulation portion that extends to the second end of center electrode, the utility model discloses adopting three electrode structure, can produce longer more stable electric arc stably and efficiently, and then realizes the ignition operation of low current impact, high discharge efficiency.

Description

Technical Field

[0001] This utility model belongs to the technical field of ignition nozzles, specifically relating to a three-electrode semiconductor ignition nozzle. Background Technology

[0002] An ignition nozzle is a component used to instantaneously release an electric arc spark when energized to ignite a combustion medium. In the prior art, ignition nozzles are generally divided into two types: semiconductor ignition nozzles and non-semiconductor ignition nozzles.

[0003] Semiconductor ignition nozzles suffer from short lifespans due to excessive instantaneous current surges during discharge, while non-semiconductor ignition nozzles exhibit low discharge efficiency due to small electrode gaps. Therefore, to address the aforementioned shortcomings of existing semiconductor and non-semiconductor ignition nozzles, this invention discloses a three-electrode semiconductor ignition nozzle. Utility Model Content

[0004] This utility model discloses a three-electrode semiconductor ignition nozzle, which adopts a three-electrode structure and can stably and efficiently generate a longer and more stable electric arc, thereby achieving ignition operation with low current impact and high discharge efficiency.

[0005] This utility model is achieved through the following technical solution:

[0006] A three-electrode semiconductor ignition nozzle includes a housing electrode, a center electrode coaxially disposed at the center of the housing electrode, a high-temperature ceramic tube sleeved on the first end of the center electrode, an arc-initiating electrode sleeved on the outside of the high-temperature ceramic tube, a cavity between the arc-initiating electrode and the housing electrode, heat dissipation holes communicating with the cavity are provided on the side wall of the cavity, and a heat-resistant insulating part extending to the second end of the center electrode is sleeved on the outside of the center electrode.

[0007] The center electrode, arc-initiating electrode, and outer shell electrode constitute a three-electrode ignition structure. Applying a high-voltage, high-energy electrical pulse to the center and outer shell electrodes first creates an arc between them. This arc then crosses the arc-initiating electrode and forms an arc between the center and outer shell electrodes. At this point, the high-voltage, high-energy electrical pulse is released through the center electrode, creating an electric spark. The presence of the arc-initiating electrode ensures that the arc can cross from the outer shell electrode to the center electrode while simultaneously extending the distance between them, effectively lengthening the arc. This facilitates better contact between the arc and the combustion cutoff point, improving the ignition reliability of the ignition nozzle.

[0008] To better realize this utility model, the arc-starting electrode further includes an iridium alloy substrate and a semiconductor layer. The iridium alloy substrate is sleeved on the outside of the high-temperature ceramic tube, and a semiconductor layer is provided on the end face of the first end of the iridium alloy substrate.

[0009] To better realize this utility model, the thickness of the semiconductor layer is less than or equal to 2 mm, and the resistance value of the semiconductor layer is 1 kΩ-10 kΩ.

[0010] To better realize this utility model, at least two sets of heat dissipation holes are evenly distributed along the circumference on the side wall of the cavity.

[0011] To better realize this utility model, the temperature-resistant insulating part further includes a second ceramic tube, a sealing insulator, and a first ceramic tube. The first ceramic tube is sleeved on the outside of the high-temperature ceramic tube, and the second ceramic tube is sleeved on the outside of the second end of the central electrode. A sealing cavity is formed between the first ceramic tube and the second ceramic tube, and a sealing insulator is provided inside the sealing cavity.

[0012] To better realize this utility model, the sealing insulator further includes a glass crystal and a locking nut. The center electrode is provided with an external thread, and the locking nut is threadedly fitted onto the outside of the center electrode. The first end of the locking nut abuts against the second end of the first ceramic tube. The second end of the locking nut is provided with a glass crystal, and the glass crystal fills the sealing cavity.

[0013] To better realize this utility model, the second end of the central electrode is provided with a contact block, which abuts against the second end of the second ceramic tube.

[0014] To better realize this utility model, a locking ring is further installed on the internal thread of the second end of the outer shell electrode, and the locking ring abuts against the second end face of the second ceramic tube.

[0015] Compared with the prior art, this utility model has the following advantages and beneficial effects:

[0016] (1) This utility model adopts a three-electrode structure consisting of a shell electrode, a center electrode, and an arc-initiating electrode, which makes the arc distance farther, reduces the circuit conduction loss, makes the ignition energy conversion efficiency higher, and is more conducive to the contact between the arc and the combustion medium, thereby improving the reliability and success rate of ignition.

[0017] (2) This utility model adopts a three-electrode structure of shell electrode, center electrode and arc-starting electrode. When the arc is excited, it does not affect the semiconductor layer located between the center electrode and the arc-starting electrode. Therefore, the semiconductor layer will not be damaged by the impact of the arc, thus extending the service life of the semiconductor. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the internal structure of a three-electrode semiconductor ignition nozzle.

[0019] Figure 2A schematic diagram of the structure of the first end of a three-electrode semiconductor ignition nozzle;

[0020] Figure 3 This is a schematic diagram of the structure of the second end of a three-electrode semiconductor ignition nozzle.

[0021] Wherein: 1-locking ring; 2-washer; 3-outer electrode; 4-second ceramic tube; 5-glass crystal; 6-first ceramic tube; 7-arc-starting electrode; 8-high-temperature ceramic tube; 9-center electrode; 10-locking nut; 11-contact block; 12-heat dissipation hole; 71-iridium alloy substrate; 100-cavity; 200-semiconductor layer. Detailed Implementation

[0022] Example 1:

[0023] This embodiment discloses a three-electrode semiconductor ignition nozzle, such as... Figures 1-3 As shown, the device includes a housing electrode 3, a central electrode 9 coaxially disposed at the center of the housing electrode 3, a high-temperature ceramic tube 8 sleeved on the first end of the central electrode 9, an arc-initiating electrode 7 sleeved on the outside of the high-temperature ceramic tube 8, a cavity 100 between the arc-initiating electrode 7 and the housing electrode 3, a heat dissipation hole 12 communicating with the cavity 100 on the side wall of the cavity 100, and a temperature-resistant insulating part extending to the second end of the central electrode 9 sleeved on the outside of the central electrode 9.

[0024] The second end of the center electrode 9 is used for quick contact connection with the cable. A high-voltage, high-energy electrical pulse is applied to the center electrode 9 through the cable, thereby forming an electric arc between the center electrode 9 and the outer shell electrode 3. The specific process is as follows:

[0025] Arc-excited state: First, an electric arc is formed between the arc-initiating electrode 7 and the outer shell electrode 3.

[0026] Arc transition state: After an arc is formed between the arc-initiating electrode 7 and the outer shell electrode 3, the resistance between the arc-initiating electrode 7 and the outer shell electrode 3 drops to about 50Ω. At this time, the voltage of the high-voltage, high-energy electric pulse will be applied to the arc-initiating electrode 7 and the center electrode 9. Because the arc-initiating electrode 7 is metal, its resistance can be considered zero.

[0027] Arc crossing state: An electric arc is formed at one end of the outer shell electrode 3 and the arc-initiating electrode 7, and the electric arc crosses over to the center electrode 9, thereby forming an electric arc between the center electrode 9 and the outer shell electrode 3.

[0028] Energy Release State: After an electric arc is formed between the central electrode 9 and the outer shell electrode 3, the energy of the high-voltage, high-energy electric pulse is released through the arc, forming a high-energy electric spark ejected outward. Because the distance between the central electrode 9 and the outer shell electrode 3 is longer, the resulting arc is longer and the equivalent resistance is greater, thereby reducing circuit conduction losses and increasing conversion efficiency. Furthermore, a longer arc is more conducive to contact between the arc and the combustion medium, improving ignition reliability.

[0029] Furthermore, the gap between the first end of the center electrode 9 and the first end of the outer shell electrode 3 is greater than or equal to 3mm, which is much larger than the 1-2mm discharge distance of existing dual-electrode nozzles. Because the discharge spacing at the nozzle end is greatly improved, the arc distance is longer, the internal resistance of the arc increases, the discharge current decreases when the discharge voltage remains unchanged, and the cable transmission loss decreases when the cable internal resistance remains unchanged, thereby increasing the energy conversion efficiency of the ignition nozzle; the contact area between the arc and the combustion medium is greatly increased, thereby improving the reliability of ignition; the semiconductor will not be damaged too quickly due to the excessive instantaneous current of the arc, thus extending the service life of the nozzle.

[0030] Furthermore, at least two sets of heat dissipation holes 12 are evenly distributed along the circumference on the side wall of the cavity 100. By evenly distributing the heat dissipation holes 12 along the circumference, the electrodes can be quickly cooled, avoiding damage to the electrodes due to high temperature.

[0031] Example 2:

[0032] This embodiment discloses a three-electrode semiconductor ignition nozzle, which is an improvement on Embodiment 1, such as... Figure 1 As shown, the arc-starting electrode 7 includes an iridium alloy substrate 71 and a semiconductor layer 200. The iridium alloy substrate 71 is sleeved on the outside of the high-temperature ceramic tube 8, and the semiconductor layer 200 is disposed on the end face of the first end of the iridium alloy substrate 71.

[0033] The iridium alloy substrate 71 is made of iridium alloy material, which ensures that the arc-starting electrode 7 can withstand high temperatures, thereby reducing the ablation rate of the arc-starting electrode 7 and extending its lifespan. A semiconductor layer 200 with a thickness of less than or equal to 2 mm is plated on the end face of the first end of the iridium alloy substrate 71, and the resistance of the semiconductor layer 200 is 1 kΩ-10 kΩ.

[0034] The working principle is as follows:

[0035] Arc-excited state: Since a semiconductor layer 200 is connected between the center electrode 9 and the arc-initiating electrode 7, and the resistance between the arc-initiating electrode 7 and the inner wall of the outer shell electrode 3 can be considered to be infinite, an arc is first formed between the arc-initiating electrode 7 and the outer shell electrode 3.

[0036] Arc transition state: After an arc is formed between the arc-initiating electrode 7 and the outer shell electrode 3, the resistance between the arc-initiating electrode 7 and the outer shell electrode 3 drops to about 50Ω. At this time, the voltage of the high-voltage, high-energy electric pulse will be applied to the arc-initiating electrode 7, the semiconductor layer 200, and the center electrode 9. Because the arc-initiating electrode 7 is metal, its resistance can be considered zero, so one end of the arc will pass over the arc-initiating electrode 7 and transition to the contact point between the arc-initiating electrode 7 and the semiconductor layer 200.

[0037] Arc crossing state: An arc is formed between the outer shell electrode 3 and one end of the semiconductor layer 200. Therefore, the voltage of the high voltage and high energy electric pulse will be applied to the semiconductor layer 200. Since the semiconductor layer 200 can be regarded as an infinite number of series and parallel resistors, one end of the arc will instantly cross the surface of the semiconductor layer 200 to reach the central electrode 9, thereby forming an arc between the central electrode 9 and the outer shell electrode 3.

[0038] Energy Release State: After an electric arc is formed between the central electrode 9 and the outer shell electrode 3, the energy of the high-voltage, high-energy electric pulse is released through the arc, forming a high-energy electric spark ejected outward. Because the distance between the central electrode 9 and the outer shell electrode 3 is longer, the resulting arc is longer and the equivalent resistance is greater, thereby reducing circuit conduction losses and increasing conversion efficiency. Furthermore, a longer arc is more conducive to contact between the arc and the combustion medium, improving ignition reliability.

[0039] The rest of this embodiment is the same as that of Embodiment 1, so it will not be described again.

[0040] Example 3:

[0041] This embodiment discloses a three-electrode semiconductor ignition nozzle, which is optimized based on Embodiment 1 or 2, such as... Figure 1 , Figure 2 As shown, the heat-resistant insulating part includes a second ceramic tube 4, a sealing insulator, and a first ceramic tube 6. The first ceramic tube 6 is sleeved on the outside of the high-temperature ceramic tube 8, and the second ceramic tube 4 is sleeved on the outside of the second end of the central electrode 9. A sealed cavity is formed between the first ceramic tube 6 and the second ceramic tube 4, and a sealing insulator is provided inside the sealed cavity.

[0042] The high-temperature ceramic tube 8 is made of high-temperature resistant ceramic, enabling it to withstand the high temperatures during the electric arcing process. A semiconductor layer 200 is sintered and plated on the first end face of the high-temperature ceramic tube 8, connecting the first end of the central electrode 9 and the first end of the arc-starting electrode 7. The first ceramic tube 6 is disposed inside the outer shell electrode 3. The central groove at the first end of the first ceramic tube 6 is inserted into and fits with the second end of the high-temperature ceramic tube 8, clamping and fixing the arc-starting electrode 7, thus fixing the arc-starting electrode 7. At the same time, the first ceramic tube 7 and the high-temperature ceramic tube 8 form an insulating structure, preventing the central electrode 9 and the arc-starting electrode 7 from conducting within the outer shell electrode 3. By setting a sealing insulator, the sealing of the portion of the central electrode 9 and the arc-starting electrode 7 located inside the outer shell electrode 3 is ensured. The second ceramic tube 4 further ensures the insulation of the portion of the central electrode 9 and the arc-starting electrode 7 located inside the outer shell electrode 3.

[0043] The rest of this embodiment is the same as that of embodiment 1 or 2, so it will not be described again.

[0044] Example 4:

[0045] This embodiment discloses a three-electrode semiconductor ignition nozzle, which is optimized based on any one of embodiments 1-3, such as... Figure 1 As shown, the sealing insulator includes a glass crystal 5 and a locking nut 10. The center electrode 9 has an external thread, and the locking nut 10 is threadedly fitted onto the outside of the center electrode 9. The first end of the locking nut 10 abuts against the second end of the first ceramic tube 6. The second end of the locking nut 10 is provided with a glass crystal 5, which fills the sealing cavity.

[0046] The sealed cavity is filled with glass crystal powder, which melts and sintersects at high temperature to form dense glass crystals 5, thereby effectively sealing the inside of the outer shell electrode 3. The locking nut 10 is threadedly engaged with the external thread of the center electrode 9. By tightening the locking nut 10, the center electrode 9 is locked and fixed inside the outer shell electrode 3.

[0047] Furthermore, a contact block 11 is provided at the second end of the central electrode 9. The contact block 11 abuts against the second end of the second ceramic tube 4. The contact block 11 is used for quick contact connection with the cable, and a high voltage and high energy electrical pulse is applied to the central electrode 9 through the cable and the contact block 11.

[0048] The rest of this embodiment is the same as that of embodiment 1 or 2, so it will not be described again.

[0049] Example 4:

[0050] This embodiment discloses a three-electrode semiconductor ignition nozzle, which is optimized based on any one of embodiments 1-3, such as... Figure 1 , Figure 3 As shown, a locking ring 1 is installed on the internal thread of the second end of the outer shell electrode 3, and the locking ring 1 abuts against the second end face of the second ceramic tube 4.

[0051] An internal thread is provided on the inner wall of the second end of the outer casing electrode 3, and an external thread is provided on the outer wall of the locking ring 1 that corresponds to the internal thread. By screwing the locking ring 1, the second ceramic tube 4 at the first end of the locking ring 1 is pressed and fixed. At the same time, a washer 2 is provided between the locking ring 1 and the second end of the second ceramic tube 4. By installing washers 2 of different thicknesses, the degree of compression of the locking ring 1 on the second ceramic tube 4 can be adjusted.

[0052] The rest of the content of this embodiment is the same as any one of embodiments 1-3, so it will not be repeated here.

[0053] The above description is merely a preferred embodiment of the present utility model and is not intended to limit the present utility model in any way. Any simple modifications or equivalent changes made to the above embodiments based on the technical essence of the present utility model shall fall within the protection scope of the present utility model.

Claims

1. A three-electrode semiconductor ignition nozzle, characterized in that, The device includes a shell electrode (3), a center electrode (9) is coaxially disposed at the center of the shell electrode (3), a high-temperature ceramic tube (8) is sleeved on the first end of the center electrode (9), an arc-starting electrode (7) is sleeved on the outside of the high-temperature ceramic tube (8), a cavity (100) is left between the arc-starting electrode (7) and the shell electrode (3), a heat dissipation hole (12) communicating with the cavity (100) is disposed on the side wall of the cavity (100), and a heat-resistant insulating part extending to the second end of the center electrode (9) is sleeved on the outside of the center electrode (9).

2. The three-electrode semiconductor ignition nozzle according to claim 1, characterized in that, The arc-starting electrode (7) includes an iridium alloy substrate (71) and a semiconductor layer (200). The iridium alloy substrate (71) is sleeved on the outside of the high-temperature ceramic tube (8), and the semiconductor layer (200) is disposed on the end face of the first end of the iridium alloy substrate (71).

3. The three-electrode semiconductor ignition nozzle according to claim 2, characterized in that, The thickness of the semiconductor layer (200) is less than or equal to 2 mm, and the resistance of the semiconductor layer (200) is 1 kΩ-10 kΩ.

4. The three-electrode semiconductor ignition nozzle according to claim 3, characterized in that, At least two sets of heat dissipation holes (12) are evenly distributed circumferentially on the side wall of the cavity (100).

5. A three-electrode semiconductor ignition nozzle according to any one of claims 1-4, characterized in that, The heat-resistant insulating part includes a second ceramic tube (4), a sealing insulator, and a first ceramic tube (6). The first ceramic tube (6) is sleeved on the outside of the high-temperature ceramic tube (8), and the second ceramic tube (4) is sleeved on the outside of the second end of the center electrode (9). A sealing cavity is formed between the first ceramic tube (6) and the second ceramic tube (4), and a sealing insulator is provided inside the sealing cavity.

6. A three-electrode semiconductor ignition nozzle according to claim 5, characterized in that, The sealing insulator includes a glass crystal (5) and a locking nut (10). The center electrode (9) is provided with an external thread. The locking nut (10) is threaded and sleeved on the outside of the center electrode (9). The first end of the locking nut (10) abuts against the second end of the first ceramic tube (6). The second end of the locking nut (10) is provided with a glass crystal (5), which fills the sealing cavity.

7. A three-electrode semiconductor ignition nozzle according to claim 6, characterized in that, The second end of the central electrode (9) is provided with a contact block (11), which abuts against the second end of the second ceramic tube (4).

8. A three-electrode semiconductor ignition nozzle according to claim 7, characterized in that, A locking ring (1) is installed on the internal thread of the second end of the outer shell electrode (3), and the locking ring (1) abuts against the second end face of the second ceramic tube (4).

Images