An anti-sparking circuit, a PCB board and an electronic device
Patent Information
- Application Number
- CN202522237358.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-10-23
- Publication Date
- 2026-10-09
- Estimated Expiration
- 2035-10-23
AI Technical Summary
[0002]传统防打火花电路多仅采用RC缓冲结构抑制插拔瞬间的浪涌电流,但在实际应用中,当电源极性反接时,反向电流会直接流经防火花单元的限流电阻等元件,导致其过热烧毁而丧失防火花功能;若输入电压过压,过高的电压又会击穿防火花单元的电容,破坏RC缓冲结构的完整性,使防打火花机制失效
[0013]本实用新型第二方面实施例提供一种PCB板,包括如上任一项所述的防打火花电路。
Smart Images

Figure CN224843106U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of electronic technology, and in particular to an anti-sparking circuit, PCB board and electronic equipment. Background Technology
[0002] Traditional spark protection circuits often rely solely on RC buffer structures to suppress surge currents during insertion and removal. However, in practical applications, when the power supply polarity is reversed, the reverse current flows directly through components such as the current-limiting resistor in the spark protection unit, causing them to overheat and burn out, thus losing their spark protection function. Furthermore, if the input voltage is too high, the excessive voltage can damage the capacitor in the spark protection unit, compromising the integrity of the RC buffer structure and rendering the spark protection mechanism ineffective. This problem of spark protection circuit malfunction due to reverse and overvoltage inputs makes traditional solutions unreliable in complex power usage scenarios. Utility Model Content
[0003] The present invention aims to improve at least one technical problem in the background art.
[0004] The first aspect of this utility model provides a spark-proof circuit, comprising: a reverse phase protection unit, a spark-proof unit, an overvoltage protection unit, and a switching unit; the reverse phase protection unit, the spark-proof unit, the overvoltage protection unit, and the switching unit are electrically connected to each other; the reverse phase protection unit is used to block reverse input current, the spark-proof unit is used to suppress transient circuits, the overvoltage protection unit is used to monitor overcurrent voltage, and the switching unit is used to control the circuit on / off according to the monitoring result of the overvoltage protection unit.
[0005] The beneficial effects of this utility model are as follows: The anti-sparking circuit provided by this utility model first cuts off the reverse current path through a unidirectional conduction mechanism, preventing reverse current from flowing through the anti-sparking unit and protecting its components from being burned out at the source, ensuring that the anti-sparking function can still be maintained when the polarity is reversed; then, the overvoltage protection unit monitors the input voltage in real time and forms a linkage protection with the switching unit, quickly cutting off the main circuit in case of overvoltage to prevent overvoltage impact from damaging the anti-sparking unit; finally, the anti-sparking unit suppresses the surge current at the moment of insertion and removal, thereby eliminating the conditions for spark generation; this utility model solves the problem of interference of reverse and overvoltage inputs on the anti-sparking function through the triple synergy of reverse blocking, over-limit protection and spark suppression, enabling the anti-sparking circuit to provide effective protection even in complex power usage scenarios.
[0006] As some sub-solutions of the above technical solution, the reverse protection unit includes a power input terminal and a first diode D1; the anode of the first diode D1 is connected to the power input terminal, and the cathode of the first diode D1 is connected to the overvoltage protection unit, the anti-sparking unit and the switching unit.
[0007] As some sub-solutions of the above technical solution, the overvoltage protection unit includes a first Zener diode ZD1 and a first transistor Q1; the cathode of the first diode ZD1 is connected to the cathode of the first Zener diode ZD1, the base of the first transistor Q1, and the emitter of the first transistor Q1; the anode of the first Zener diode ZD1 is grounded; and the collector of the first transistor Q1 is connected to the anti-sparking unit.
[0008] As a sub-solution of the above technical solution, the first transistor Q1 is a PNP type transistor.
[0009] As some sub-solutions of the above technical solution, the overvoltage protection unit further includes a first resistor R1 and a second resistor R2; one end of the first resistor R1 is connected to the cathode of the first diode D1, the other end of the first resistor R1 is connected to the cathode of the first Zener diode ZD1 and one end of the second resistor R2, and the other end of the second resistor R2 is connected to the base of the first transistor Q1.
[0010] As a sub-solution of the above technical solution, the resistance values of the first resistor R1 and the second resistor R2 are equal.
[0011] As some sub-solutions of the above technical solution, the anti-sparking unit includes a third resistor R3, a fourth resistor R4, and a first capacitor C1; one end of the fourth resistor R4 is connected to the cathode of the first diode D1, one end of the first capacitor C1, and the switching unit; the other end of the fourth resistor R4 is connected to the other end of the first capacitor C1, one end of the third resistor R3, the collector of the first transistor Q1, and the switching unit; the other end of the third resistor R3 is grounded.
[0012] As some sub-solutions of the above technical solution, the switching unit includes a first field-effect transistor MOS1 and a power output terminal; the source of the first field-effect transistor MOS1 is connected to the cathode of the first diode D1, the gate of the first field-effect transistor MOS1 is connected to the collector of the first transistor Q1, and the drain of the first field-effect transistor MOS1 is connected to the power output terminal.
[0013] A second aspect of this utility model provides a PCB board including the anti-sparking circuit as described in any of the preceding claims.
[0014] The PCB board according to the second aspect embodiment of this utility model has corresponding beneficial effects because it includes the anti-sparking circuit of the above-mentioned technical solution.
[0015] A third aspect of this utility model provides an electronic device, including the anti-sparking circuit as described in any of the preceding claims.
[0016] The chip according to the third aspect embodiment of this utility model has corresponding beneficial effects because it includes the anti-sparking circuit of the above-mentioned technical solution. Attached Figure Description
[0017] The above and / or additional aspects and advantages of this utility model will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which: Figure 1 A circuit block diagram of the anti-sparking circuit provided by this utility model; Figure 2 The circuit diagram of the anti-sparking circuit provided by this utility model.
[0018] In the attached diagram: 1-Reverse phase protection unit; 2-Overvoltage protection unit; 3-Spark prevention unit; 4-Switch unit. Detailed Implementation
[0019] The embodiments of this utility model are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this utility model, and should not be construed as limiting this utility model.
[0020] In the description of this utility model, it should be understood that the directional descriptions, such as up, down, front, back, left, right, etc., indicate the directional or positional relationship based on the directional or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.
[0021] In the description of this utility model, "several" means an indefinite quantity, "multiple" means two or more, "greater than," "less than," and "exceeding" are understood to exclude the stated number, while "above," "below," and "within" are understood to include the stated number. The use of "first" and "second" in the description is merely for distinguishing technical features and should not be construed as indicating or implying relative importance, the quantity of indicated technical features, or the order of the indicated technical features. The use of "and / or" throughout the text indicates three parallel solutions; for example, A and / or B indicates a solution satisfied by A, a solution satisfied by B, or a solution satisfied by both A and B.
[0022] In the description of this utility model, if there is a short phrase containing multiple parallel features, the modifier in the phrase defines the closest feature. For example, "B, C, and E connected to D are set on A" means that B is set on A, E is connected to D, and C is not defined. However, modifiers indicating the relationship between features, such as "interval setting" or "circular arrangement," do not fall into this category. Modifiers preceded by "all" define all features in the short phrase. For example, "B, C, and D are all set on A" means that B, C, and D are all set on A. In statements where the subject is omitted, the omitted subject is the subject of the preceding statement. That is, "A has B and includes C" means that A has B and A includes C.
[0023] In the description of this utility model, unless otherwise explicitly defined, terms such as "setting," "installation," and "connection" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this utility model in conjunction with the specific content of the technical solution.
[0024] The following is combined with Figures 1 to 2 The embodiments of this utility model are described below.
[0025] A spark protection circuit in this embodiment includes: a reverse phase protection unit 1, a spark protection unit 3, an overvoltage protection unit 2, and a switching unit 4; the reverse phase protection unit 1, the spark protection unit 3, the overvoltage protection unit 2, and the switching unit 4 are electrically connected to each other; the reverse phase protection unit 1 is used to block reverse input current, the spark protection unit 3 is used to suppress transient circuits, the overvoltage protection unit 2 is used to monitor overcurrent voltage, and the switching unit 4 is used to control the circuit on / off according to the monitoring result of the overvoltage protection unit 2.
[0026] The anti-sparking circuit provided by this utility model first cuts off the reverse current path through a unidirectional conduction mechanism, preventing reverse current from flowing through the anti-sparking unit 3, thus protecting its components from being burned out from the source and ensuring that the anti-sparking function can still be maintained when the polarity is reversed; then, the overvoltage protection unit 2 monitors the input voltage in real time and forms a linkage protection with the switching unit 4, quickly cutting off the main circuit in case of overvoltage to prevent overvoltage impact from damaging the anti-sparking unit 3; finally, the anti-sparking unit 3 suppresses the surge current at the moment of insertion and removal, thereby eliminating the conditions for spark generation. This invention solves the problem of interference from reverse and overvoltage inputs on the anti-sparking function by working in synergy with reverse blocking, over-limit protection and spark suppression, so that the anti-sparking circuit can provide effective protection even in complex power usage scenarios.
[0027] Specifically, the reverse protection unit 1 includes a power input terminal and a first diode D1; the anode of the first diode D1 is connected to the power input terminal, and the cathode of the first diode D1 is connected to the overvoltage protection unit 2, the anti-sparking unit 3, and the switching unit 4.
[0028] In this embodiment, the reverse protection unit protects the power input terminal and the first diode D1; the first diode D1 can be an SS36; when the external adapter is connected in the forward direction, the anode of the first diode D1 is connected to the power input terminal, and its cathode is connected to the protection voltage terminal, and power is supplied to the subsequent units through the protection voltage terminal. At this time, the voltage of the protection voltage terminal is consistent with that of the power input terminal, ensuring normal current flow; if the external adapter is connected in the reverse direction, the first diode D1 is reverse cut off, the voltage of the protection voltage terminal is 0V, blocking the reverse current path and preventing the components in the subsequent units from burning out.
[0029] Specifically, the overvoltage protection unit 2 includes a first Zener diode ZD1 and a first transistor Q1; the cathode of the first diode ZD1 is connected to the cathode of the first Zener diode ZD1, the base of the first transistor Q1, and the emitter of the first transistor Q1; the anode of the first Zener diode ZD1 is grounded; and the collector of the first transistor Q1 is connected to the anti-sparking unit 3.
[0030] Specifically, the first transistor Q1 is a PNP type transistor.
[0031] Specifically, the overvoltage protection unit 2 further includes a first resistor R1 and a second resistor R2; one end of the first resistor R1 is connected to the cathode of the first diode D1, the other end of the first resistor R1 is connected to the cathode of the first Zener diode ZD1 and one end of the second resistor R2, and the other end of the second resistor R2 is connected to the base of the first transistor Q1.
[0032] Specifically, the resistance values of the first resistor R1 and the second resistor R2 are equal.
[0033] In this embodiment, the overvoltage protection unit 2 includes a first Zener diode ZD1, a first transistor Q1, a first resistor R1, and a second resistor R2; The first Zener diode ZD1 is used to monitor the input power supply. When the voltage exceeds 24V, it breaks down and conducts, triggering the overvoltage protection mechanism. The first transistor Q1 is used as a signal amplification element. Its base receives the breakdown signal of the first Zener diode ZD1, and its collector is connected to the first field-effect transistor MOS1 of the switching unit 4. The two work together to cut off the main circuit of the circuit. The first resistor R1 is connected in series between the cathodes of the first Zener diode ZD1 and the first diode D1, serving as a current-limiting resistor in the overvoltage sampling circuit to limit the breakdown current; the second resistor R2 is connected in series between the first resistor R1 and the base of the first transistor Q1 to provide a bias voltage to the base of the first transistor Q1; the resistance values of the first resistor R1 and the second resistor R2 are equal, and they form a symmetrical voltage divider network to ensure that the first Zener diode ZD1 conducts under an appropriate voltage. When the voltage is at normal operating level (24V), the first Zener diode ZD1 is not broken down and is in the off state. At this time, the base voltage of the first transistor Q1 is approximately 24V, while the emitter voltage of the first transistor Q1 is the voltage at the protection voltage terminal, which is 24V. Since the conduction of an NPN transistor requires the emitter voltage to be greater than the base voltage + 0.7V, the first transistor Q1 is off. At this time, the gate of the first field-effect transistor MOS1 is grounded through the third resistor R3, and the source of the first field-effect transistor MOS1 is connected to the protection voltage terminal. Therefore, the gate-source voltage of the first field-effect transistor MOS1 is 24V, which is much greater than the threshold voltage, and the first field-effect transistor MOS1 is turned on. The power supply output terminal outputs a normal 24V voltage. When the voltage is abnormal (greater than 24V), the first Zener diode ZD1 breaks down and conducts. The anode potential of the first Zener diode ZD1 is clamped at 0V, while its cathode potential is clamped at its regulated value. At this time, the base of the first transistor Q1 is connected to the cathode of the first Zener diode ZD1 through the second resistor R2, and its voltage is 24V. The emitter voltage of the first transistor Q1 is greater than 24V, and the emitter voltage is greater than the base voltage, so the first transistor Q1 conducts. At this time, the gate of the first field-effect transistor MOS1 is connected to the collector of the first transistor Q1, and the source of the first field-effect transistor MOS1 is connected to the protection voltage terminal. Since their potentials are equal, the first field-effect transistor MOS1 is cut off, cutting off the output of the power supply output terminal. As can be seen, the overvoltage protection unit 2 monitors the overvoltage through the first Zener diode ZD1 and controls the conduction of the first field-effect transistor MOS1 through the first transistor Q1 to achieve overvoltage shutdown.
[0034] Specifically, the anti-sparking unit 3 includes a third resistor R3, a fourth resistor R4, and a first capacitor C1; one end of the fourth resistor R4 is connected to the cathode of the first diode D1, one end of the first capacitor C1, and the switching unit 4; the other end of the fourth resistor R4 is connected to the other end of the first capacitor C1, one end of the third resistor R3, the collector of the first transistor Q1, and the switching unit 4; the other end of the third resistor R3 is grounded.
[0035] In this embodiment, one end of the first capacitor C1 is electrically connected to the cathode of the first diode D1 and directly receives the voltage signal after the reverse protection; the other end is connected to the gate of the first field-effect transistor MOS1, the collector of the first transistor Q1 and one end of the third resistor R3 of the switching unit 4. When the first transistor Q1 is turned off, the third resistor R3 pulls the gate potential of the first field-effect transistor MOS1 down to ground potential, thus turning on the first field-effect transistor MOS1. The first capacitor C1 and the fourth resistor R4 form an RC snubber circuit. When the power supply is plugged in or unplugged, the cathode voltage of the first diode D1 changes suddenly, which will generate a large instantaneous current. At this time, the RC snubber circuit can absorb the instantaneous surge current, slow down the current rise rate, and thus suppress the generation of sparks. The working principle of the first capacitor C1 and the fourth resistor R4 is as follows: When the power is plugged in, the first capacitor C1 is equivalent to a short circuit. The current is limited by the fourth resistor R4 and gradually charges the first capacitor C1, suppressing the surge current. When the power is unplugged, the charge stored in the first capacitor C1 is discharged through the fourth resistor R4 to avoid voltage sudden change.
[0036] Specifically, the switching unit 4 includes a first field-effect transistor MOS1 and a power output terminal; the source of the first field-effect transistor MOS1 is connected to the cathode of the first diode D1, the gate of the first field-effect transistor MOS1 is connected to the collector of the first transistor Q1, and the drain of the first field-effect transistor MOS1 is connected to the power output terminal.
[0037] In this embodiment, the on / off state of the first field-effect transistor MOS1 is controlled by the first transistor Q1. When the input voltage is normal, the first transistor Q1 is off, the gate of the first field-effect transistor MOS1 is grounded through the third resistor R3, VGS=-24V, MOS1 is on, and 24-2V is output normally. When the input voltage is overvoltage, the first transistor Q1 is on, the gate of the first field-effect transistor MOS1 is pulled high to 24-1V, VGS=0V, the first field-effect transistor MOS1 is off, the output is cut off, and overvoltage protection is achieved.
[0038] A second aspect of this utility model provides a PCB board including the anti-sparking circuit as described in any of the preceding claims.
[0039] A third aspect of this utility model provides an electronic device, including the anti-sparking circuit as described in any of the preceding claims.
[0040] The preferred embodiments of the present invention have been described in detail above, but the present disclosure is not limited to the embodiments described. Those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present invention, and these equivalent modifications or substitutions are all included within the scope defined by the claims of the present disclosure.
Claims
1. A spark-proof circuit, characterized in that, include: Reverse phase protection unit, spark prevention unit, overvoltage protection unit, and switching unit; The reverse phase protection unit, the spark prevention unit, the overvoltage protection unit, and the switching unit are electrically connected to each other; the reverse phase protection unit is used to block reverse input current, the spark prevention unit is used to suppress transient circuits, the overvoltage protection unit is used to monitor overcurrent voltage, and the switching unit is used to control the circuit on / off based on the monitoring result of the overvoltage protection unit.
2. The anti-sparking circuit according to claim 1, characterized in that: The reverse phase protection unit includes a power input terminal and a first diode D1; the anode of the first diode D1 is connected to the power input terminal, and the cathode of the first diode D1 is connected to the overvoltage protection unit, the anti-sparking unit, and the switching unit.
3. The anti-sparking circuit according to claim 2, characterized in that: The overvoltage protection unit includes a first Zener diode ZD1 and a first transistor Q1; the cathode of the first diode ZD1 is connected to the cathode of the first Zener diode ZD1, the base of the first transistor Q1, and the emitter of the first transistor Q1; the anode of the first Zener diode ZD1 is grounded; and the collector of the first transistor Q1 is connected to the anti-sparking unit.
4. The anti-sparking circuit according to claim 3, characterized in that: The first transistor Q1 is a PNP type transistor.
5. The anti-sparking circuit according to claim 3, characterized in that: The overvoltage protection unit further includes a first resistor R1 and a second resistor R2; one end of the first resistor R1 is connected to the cathode of the first diode D1, the other end of the first resistor R1 is connected to the cathode of the first Zener diode ZD1 and one end of the second resistor R2, and the other end of the second resistor R2 is connected to the base of the first transistor Q1.
6. The anti-sparking circuit according to claim 5, characterized in that: The resistance values of the first resistor R1 and the second resistor R2 are equal.
7. The anti-sparking circuit according to claim 3, characterized in that: The spark-proof unit includes a third resistor R3, a fourth resistor R4, and a first capacitor C1; one end of the fourth resistor R4 is connected to the cathode of the first diode D1, one end of the first capacitor C1, and the switching unit; the other end of the fourth resistor R4 is connected to the other end of the first capacitor C1, one end of the third resistor R3, the collector of the first transistor Q1, and the switching unit; the other end of the third resistor R3 is grounded.
8. The anti-sparking circuit according to claim 7, characterized in that: The switching unit includes a first field-effect transistor MOS1 and a power output terminal; the source of the first field-effect transistor MOS1 is connected to the cathode of the first diode D1, the gate of the first field-effect transistor MOS1 is connected to the collector of the first transistor Q1, and the drain of the first field-effect transistor MOS1 is connected to the power output terminal.
9. A PCB board, characterized in that, Including the anti-sparking circuit as described in any one of claims 1 to 8.
10. An electronic device, characterized in that, Including the anti-sparking circuit as described in any one of claims 1 to 8.