Welding clip drive circuit and apparatus

Abstract

The application belongs to the field of welding devices and relates to a welding wire clamp driving circuit and device, which comprises a communication control module, a high-voltage DAC conversion module and a power output module. The high-voltage DAC conversion module is connected with the communication control module and comprises a first resistor unit, a second resistor unit and a level switching circuit unit. The resistors in the first resistor unit have the same resistance value, the resistors in the second resistor unit have the same resistance value, the resistance value of the resistors in the first resistor unit is twice that of the resistors in the second resistor unit, the first resistor unit is connected with the second resistor unit, the level switching circuit unit is connected with the first resistor unit, and the power output module is connected with the second resistor unit. The application can effectively realize flexible adjustment of the output voltage of the high-voltage conversion module and effectively save costs.

Description

Technical Field

[0001] This application relates to the field of welding equipment technology, and in particular to a welding wire clamp drive circuit and device. Background Technology

[0002] In various industrial control applications, wire clamp drives, as a typical type of load driving device, primarily function to generate and output a stable, adjustable high-voltage signal to drive loads such as piezoelectric ceramics, special display units, or other high-voltage loads. Currently, the mainstream technology for achieving this function generally relies on an architecture of a digital-to-analog converter (DAC) + a high-voltage linear operational amplifier. However, this traditional approach has significant and pressing shortcomings in terms of output voltage adjustment flexibility and overall system cost control.

[0003] Firstly, regarding flexibility, the existing workflow is as follows: the microcontroller unit sends the digital code of the target voltage to a dedicated DAC converter chip via a digital bus (such as SPI or I2C). The DAC chip converts this digital signal into a lower voltage range analog signal. Subsequently, this weak signal is sent to a high-voltage linear operational amplifier for power and voltage amplification, ultimately outputting the high voltage required to drive the load. The fundamental problem with this process is that any change in output voltage must be recalculated and a new digital code sent by the microcontroller. This not only increases the complexity of software development but also makes real-time, dynamic voltage adjustment heavily reliant on the computing and communication resources of the main control unit, making independent, rapid hard response impossible. This architecture's bottleneck is particularly pronounced when dynamic adjustment of complex voltage sequences or high-frequency responses is required, as the adjustment mechanism is neither intuitive nor flexible.

[0004] Secondly, in order to achieve higher output accuracy and stability, the system usually needs to select multi-channel, high-resolution DAC conversion chips and high-voltage linear operational amplifiers, which leads to an increase in system cost and is not conducive to later production use. Summary of the Invention

[0005] The purpose of this application is to provide a welding clamp drive circuit, device, computer equipment, and storage medium to solve the problems of insufficient flexibility and high cost when adjusting the output voltage of a high-voltage conversion module.

[0006] To address the aforementioned technical problems, this application provides a welding wire clamp driving circuit, employing the following technical solution:

[0007] The welding clamp driving circuit includes:

[0008] Communication control module, high-voltage DAC conversion module, power output module;

[0009] The high-voltage DAC conversion module is connected to the communication control module and includes a first resistor unit, a second resistor unit, and a level switching circuit unit. The resistance values ​​of all resistors in the first resistor unit are the same, the resistance values ​​of all resistors in the second resistor unit are the same, and the resistance value of the resistors in the first resistor unit is twice the resistance value of the resistors in the second resistor unit. The first resistor unit and the second resistor unit are connected, the level switching circuit unit is connected to the first resistor unit, and the power output module is connected to the second resistor unit.

[0010] Furthermore, the first resistor unit includes a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, and a sixth resistor, and the second resistor unit includes a seventh resistor, an eighth resistor, a ninth resistor, and a tenth resistor;

[0011] One end of the first resistor is grounded, the other end of the second resistor is connected to the first resistor, the second resistor unit is connected to the electrical connection point between the first resistor and the second resistor, the third resistor is connected to the electrical connection point between the seventh resistor and the eighth resistor, the fourth resistor is connected to the electrical connection point between the eighth resistor and the ninth resistor, the fifth resistor is connected to the electrical connection point between the ninth resistor and the tenth resistor, and the sixth resistor is connected to the electrical connection point between the tenth resistor and the power output module.

[0012] Furthermore, the seventh resistor is connected to the electrical connection point between the first resistor and the second resistor, the eighth resistor is connected in series with the seventh resistor, the ninth resistor is connected in series with the eighth resistor, the tenth resistor is connected in series with the ninth resistor, and the power output module is connected to the tenth resistor.

[0013] Furthermore, the level switching circuit unit includes at least five switching circuit element groups, and the second resistor, the third resistor, the fourth resistor, the fifth resistor, and the sixth resistor are each connected to one of the switching circuit element groups;

[0014] The switching circuit component group includes a first transistor, a second transistor, a third transistor, a first resistor, a second resistor, and a power supply. The first transistor is connected to the communication control module. The second transistor and the third transistor are connected to form a complementary emitter follower and are connected to the first transistor. The first resistor is connected in series between the first transistor and the communication control module, and the second resistor is connected in parallel between the second transistor and the power supply.

[0015] Furthermore, the base of the first transistor is connected to the first resistor, the collector of the first transistor is connected to the second resistor, and the emitter of the first transistor and the collector of the third transistor are connected to the ground terminal.

[0016] Furthermore, the base of the second transistor and the second resistor are electrically connected to the collector of the first transistor, the collector of the second transistor is connected to the power supply, and the emitter of the second transistor is connected to the emitter of the third transistor.

[0017] Furthermore, the base of the third transistor and the second resistor are electrically connected to the collector of the first transistor, the collector of the third transistor is connected to the ground terminal, and the emitter of the third transistor is connected to the emitter of the second transistor.

[0018] Furthermore, the second resistor, the third resistor, the fourth resistor, the fifth resistor, and the sixth resistor are all connected to the electrical connection point between the emitter of the second transistor and the emitter of the third transistor in the corresponding switching circuit element group.

[0019] Furthermore, the first and second transistors are NPN transistors, and the third transistor is a PNP transistor.

[0020] To address the aforementioned technical problems, this application also provides a welding wire clamp driving device, which employs the following technical solution:

[0021] The welding wire clamp driving device includes a welding wire clamp driving circuit and a wire clamp device. The welding wire clamp driving circuit is used to drive the piezoelectric ceramic part of the wire clamp device to extend and retract according to the voltage change, so as to drive the wire clamp arm of the wire clamp device to open, close or hold. The welding wire clamp driving circuit adopts the welding wire clamp driving circuit as described above.

[0022] Compared with the prior art, the embodiments of this application have the following main advantages:

[0023] This application establishes a welding clamp drive circuit comprising a communication control module, a high-voltage DAC conversion module, and a power output module. It connects the high-voltage DAC conversion module and the communication control module, which include a first resistor unit, a second resistor unit, and a level switching circuit unit. The resistance values ​​of all resistors in the first resistor unit and the second resistor unit are set to be identical, and the resistance value of the resistors in the first resistor unit is twice that of the resistors in the second resistor unit, thus effectively forming an R-2R network structure. By connecting the first and second resistor units, the level switching circuit unit, and the power output module, an integrated structure of DAC conversion and high-voltage output is achieved through the combination of the R-2R resistor network and the level switching circuit unit. This allows for flexible adjustment of the high-voltage conversion module's output voltage and effectively saves costs. Attached Figure Description

[0024] To more clearly illustrate the solutions in this application, the accompanying drawings used in the description of the embodiments of this application will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a schematic diagram of a circuit module of one embodiment of the welding clamp driving circuit of this application;

[0026] Figure 2 This is a circuit diagram of a high-voltage DAC conversion module according to an embodiment of the welding clamp driving method of this application.

[0027] Reference numerals: Communication control module 1, High-voltage DAC conversion module 2, Power output module 3, First resistor unit 21, Second resistor unit 22, Level switching circuit unit 23, First resistor R1, Second resistor R2, Third resistor R3, Fourth resistor R4, Fifth resistor R5, Sixth resistor R6, Seventh resistor R7, Eighth resistor R8, Ninth resistor R9, Tenth resistor R10, Switching circuit element group 221, First transistor Q1, Second transistor Q2, Third transistor Q3, First resistor element R11, Second resistor element R12, Power supply V, Ground terminal AGND. Detailed Implementation

[0028] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein in the specification of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the terms "comprising" and "having," and any variations thereof, in the specification, claims, and foregoing drawings of this application, are intended to cover non-exclusive inclusion. The terms "first," "second," etc., in the specification, claims, or foregoing drawings of this application are used to distinguish different objects, not to describe a particular order.

[0029] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0030] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings.

[0031] refer to Figure 1 The welding clamp driving circuit of this application includes:

[0032] Communication control module 1, high voltage DAC conversion module 2, power output module 3;

[0033] The high-voltage DAC conversion module 2 is connected to the communication control module 1 and includes a first resistor unit 21, a second resistor unit 22, and a level switching circuit unit 23. The resistance values ​​of all resistors in the first resistor unit 21 are the same, the resistance values ​​of all resistors in the second resistor unit 22 are the same, and the resistance value of the resistors in the first resistor unit 21 is twice the resistance value of the resistors in the second resistor unit 22. The first resistor unit 21 and the second resistor unit 22 are connected, the level switching circuit unit 23 is connected to the first resistor unit 21, and the power output module 3 is connected to the second resistor unit 22.

[0034] In this embodiment, the communication control module 1 includes an MCU chip (e.g., STM32H562RGT6) and a communication chip (e.g., ADM2582EBRWZ), as well as their peripheral circuit components. Multiple I / O ports of the MCU chip are connected to the high-voltage DAC conversion module via wires. The power output module 3 consists of a field-effect transistor (FET) and its driving circuit. The gate of the FET is directly connected to the output terminal of the high-voltage DAC conversion module via a wire.

[0035] This application establishes a welding clamp drive circuit comprising a communication control module 1, a high-voltage DAC conversion module 2, and a power output module 3. The high-voltage DAC conversion module 2, comprising a first resistor unit 21, a second resistor unit 22, and a level switching circuit unit 23, is connected to the communication control module 1. The resistance values ​​of all resistors in the first resistor unit 21 and the second resistor unit 22 are set to be the same, and the resistance value of the resistors in the first resistor unit 21 is twice that of the resistors in the second resistor unit 22. This effectively forms an R-2R network structure. The first resistor unit 21 and the second resistor unit 22 are connected, the level switching circuit unit 23 is connected to the first resistor unit 21, and the power output module 3 is connected to the second resistor unit 22. Thus, by combining the R-2R resistor network and the level switching circuit unit 23, an integrated structure for DAC conversion and high-voltage output is achieved. This allows for flexible adjustment of the output voltage of the high-voltage conversion module and effectively saves costs.

[0036] In an optional embodiment of this example, the first resistor unit 21 includes a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, and a sixth resistor R6, and the second resistor unit 22 includes a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, and a tenth resistor R10.

[0037] One end of the first resistor R1 is grounded, the other end of the second resistor R2 is connected to the first resistor R1, the second resistor unit 22 is connected to the electrical connection point between the first resistor R1 and the second resistor R2, the third resistor R3 is connected to the electrical connection point between the seventh resistor R7 and the eighth resistor R8, the fourth resistor R4 is connected to the electrical connection point between the eighth resistor R8 and the ninth resistor R9, the fifth resistor R5 is connected to the electrical connection point between the ninth resistor R9 and the tenth resistor R10, and the sixth resistor R6 is connected to the electrical connection point between the tenth resistor R10 and the power output module 3.

[0038] In this embodiment, the resistance values ​​of the first resistor R1, second resistor R2, third resistor R3, fourth resistor R4, fifth resistor R5, and sixth resistor R6 are all 54KΩ, and the resistance values ​​of the seventh resistor R7, eighth resistor R8, ninth resistor R9, and tenth resistor R10 are all 27KΩ. The resistors of the first resistor unit 21 and the second resistor unit 22 are connected through circuit board wiring to form an R-2R network structure. The R-2R resistor network is a ladder circuit constructed using resistors with two resistance values ​​(R and 2R), which can efficiently and accurately convert digital signals into analog signals (voltage or current).

[0039] This embodiment sets up a first resistor unit 21 including a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, and a sixth resistor R6, and a second resistor unit 22 including a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, and a tenth resistor R10, thereby forming an R-2R network structure through their circuit connection, effectively converting digital signals into corresponding analog signals.

[0040] In another optional embodiment of this example, the seventh resistor R7 is connected to the electrical connection point between the first resistor R1 and the second resistor R2, the eighth resistor R8 is connected in series with the seventh resistor R7, the ninth resistor R9 is connected in series with the eighth resistor R8, the tenth resistor R10 is connected in series with the ninth resistor R9, and the power output module 3 is connected to the tenth resistor R10.

[0041] In this embodiment, the seventh resistor R7, the eighth resistor R8, the ninth resistor R9, and the tenth resistor R10 are connected in series. The tenth resistor R10 is connected to the output terminal of the high-voltage DAC conversion module 2, which is connected to the power output module 3.

[0042] In this embodiment, the seventh resistor R7, the eighth resistor R8, the ninth resistor R9, and the tenth resistor R10 are connected in series, which effectively and conveniently arranges each resistor in the first resistor unit 21 to the two ends of the seventh resistor R7, the eighth resistor R8, the ninth resistor R9, and the tenth resistor R10 to form an R-2R network structure.

[0043] In another optional embodiment of this example, the level switching circuit unit 23 includes at least five switching circuit element groups 221, and the second resistor R2, the third resistor R3, the fourth resistor R4, the fifth resistor R5, and the sixth resistor R6 are each connected to one of the switching circuit element groups 221.

[0044] The switching circuit element group 221 includes a first transistor Q1, a second transistor Q2, a third transistor Q3, a first resistor R11, a second resistor R12, and a power supply V. The first transistor Q1 is connected to the communication control module 1. The second transistor Q2 and the third transistor Q3 are connected to form a complementary emitter follower and are connected to the first transistor Q1. The first resistor R11 is connected in series between the first transistor Q1 and the communication control module 1. The second resistor R12 is connected in parallel between the second transistor Q2 and the power supply V.

[0045] In this embodiment, the level switching circuit unit 23 includes five switching circuit element groups 221. Each switching circuit element group 221 includes a first transistor Q1, a second transistor Q2, a third transistor Q3, a first resistor R11, a second resistor R12, and a power supply V. The resistance of the first resistor R11 is 10KΩ, the resistance of the second resistor R12 is 100KΩ, and the voltage of the power supply V is 120V. The base of the first transistor Q1 in each switching circuit element group 221 is connected to the IO port (DAC-D0 to DAC-D4) of the MCU of the communication control module 1 through the first resistor R11.

[0046] This embodiment sets up a level switching circuit unit 23 with at least five switching circuit element groups 221, thereby effectively controlling the switching of transistors in multiple circuit element groups 221 through the combination of MCU IO port levels, so that the resistor network of the high voltage DAC conversion module outputs a high voltage from 0.7V to 119.3V.

[0047] In another optional embodiment of this example, the base of the first transistor Q1 is connected to the first resistor R11, the collector of the first transistor Q1 is connected to the second resistor R12, and the emitter of the first transistor Q1 and the collector of the third transistor Q3 are connected to the ground terminal AGND.

[0048] This embodiment effectively enables the first transistor Q1 to respond to the level control output by the communication control module 1 by setting the connection method of the base, emitter and collector of the first transistor Q1, and enables the switching of the first transistor Q1 to effectively affect the complementary emitter follower composed of the second transistor Q3 and the third transistor Q3.

[0049] In another optional embodiment of this example, the base of the second transistor Q2 and the electrical connection point between the second resistor R12 and the collector of the first transistor Q1 are connected, the collector of the second transistor Q2 is connected to the power supply V, and the emitter of the second transistor Q2 is connected to the emitter of the third transistor Q3.

[0050] In this embodiment, the second transistor Q2 and the third transistor Q3 are NPN and PNP transistors, respectively, forming a complementary emitter follower. The emitter follower itself is a common-collector amplifier circuit, characterized by: voltage gain ≈ 1, high input impedance, and low output impedance. "Complementary" refers to the use of two transistors with complementary characteristics: an NPN transistor and a PNP transistor. The core operation involves each transistor amplifying half of the signal. During the positive half-cycle (input voltage > 0): the base-emitter voltage of the NPN transistor (Q1) becomes forward biased, and Q1 conducts; the base-emitter voltage of the PNP transistor (Q2) is reverse biased, and Q2 is cut off; current flows from +Vcc through Q1 to the load, forming the positive half-cycle of the output. At this time, Q1 operates as an emitter follower. During the negative half-cycle (input voltage < 0): the base-emitter voltage of the PNP transistor (Q2) becomes forward biased, and Q2 conducts; the base-emitter voltage of the NPN transistor (Q1) is reverse biased, and Q1 is cut off; current flows from the load through Q2 to -Vee (or ground), forming the negative half-cycle of the output. At this time, Q2 operates as an emitter follower.

[0051] This embodiment effectively connects the second transistor Q2 and the third transistor Q3 to form a complementary emitter follower by setting the connection method of the base, emitter, and collector of the second transistor Q2, thereby effectively amplifying the current signal passing through the first transistor Q1.

[0052] In another optional embodiment of this example, the base of the third transistor Q3 and the electrical connection point between the second resistor R12 and the collector of the first transistor Q1 are connected, the collector of the third transistor Q3 and the ground terminal AGND are connected, and the emitter of the third transistor Q3 and the emitter of the second transistor Q2 are connected.

[0053] In this embodiment, the second transistor Q2 and the third transistor Q3 are NPN and PNP type transistors, respectively, and this combination effectively forms a complementary emitter follower. The second resistor R12 is a current-limiting resistor.

[0054] This embodiment effectively connects the second transistor Q2 and the third transistor Q3 to form a complementary emitter follower by setting the connection method of the base, emitter, and collector of the third transistor Q3, thereby effectively amplifying the current signal passing through the first transistor Q1.

[0055] In another optional embodiment of this example, the second resistor R2, the third resistor R3, the fourth resistor R4, the fifth resistor R5, and the sixth resistor R6 are all connected to the electrical connection point between the emitter of the second transistor Q2 and the emitter of the third transistor Q3 in the corresponding switching circuit element group 221.

[0056] In this embodiment, the second resistor R2, the third resistor R3, the fourth resistor R4, the fifth resistor R5, and the sixth resistor R6 each correspond to a switching circuit element group. This correspondence is one-to-one. If the number of switching circuit element groups increases, the number of the second resistor R2, the third resistor R3, the fourth resistor R4, the fifth resistor R5, and the sixth resistor R6 will also increase to the corresponding number. Similarly, the resistance of the second resistor unit 22 will also increase accordingly. In this embodiment, the number of resistances of the second resistor unit 22 = the number of switching circuit element groups - 1.

[0057] In this embodiment, the second resistor R2, the third resistor R3, the fourth resistor R4, the fifth resistor R5, and the sixth resistor R6 are configured to correspond one-to-one with the switching circuit element group 221, and each resistor is configured to be connected to the electrical connection point between the emitter of the second transistor Q2 and the emitter of the third transistor Q3. This effectively connects the level switching circuit unit 23 and the R-2R resistor network, enabling the high-voltage DAC conversion module to output the corresponding high voltage.

[0058] In another optional embodiment of this example, the first transistor Q1 and the second transistor Q2 are NPN transistors, and the third transistor Q3 is a PNP transistor.

[0059] In this embodiment, the first transistor Q1 can be an MMBTA42, the second transistor Q2 can be an MMBTA92, and the third transistor Q3 can be an MMBTA42.

[0060] In this embodiment, the first transistor Q1 and the second transistor Q2 are set as NPN transistors, and the third transistor Q3 is set as a PNP transistor, so as to effectively arrange the transistor network in the level switching circuit unit 23, so that the transistors in the transistor network can work together effectively.

[0061] In this embodiment, the communication control module 1 includes an MCU chip U1 (STM32H562RGT6) and a communication chip U2 (ADM2582EBRWZ), as well as peripheral components such as capacitors and resistors. These components are soldered onto a circuit board, and the MCU's I / O ports (DAC-D0 to DAC-D4) are connected to the high-voltage DAC conversion module 2 through PCB wires.

[0062] The high-voltage DAC conversion module 2 consists of a 5-bit R-2R resistor network (composed of R11 and R22) and a level switching circuit unit. The resistor network is formed on the circuit board by arranging 54KΩ resistors (first resistor unit 21) and 27KΩ resistors (second resistor unit 22) in an R-2R ratio. The level switching circuit unit includes five identical switching circuit element groups, each corresponding to one DAC input. Taking the most significant bit as an example, it includes NPN transistors Q1 and Q3 (MMBTA42), PNP transistor Q2 (MMBTA92), a first resistor R11 (10KΩ), and a second resistor R12 (100KΩ). The base of Q1 is connected to the MCU's I / O port (e.g., DAC-D4) through R11, and the collector of Q1 is connected to a 120V high-voltage power supply through R12. Q2 and Q3 form a complementary emitter follower, and their outputs are connected to the resistor network nodes. By combining the I / O port levels of the MCU, the transistor switch in the level switching circuit unit is controlled, so that the resistor network outputs 32 levels of high voltage from 0.7V to 119.3V.

[0063] The power output module 3 uses a field-effect transistor Q20 (such as IRF840), whose gate is directly connected to the output terminal of the high-voltage DAC conversion module 2, whose drain is connected to a piezoelectric ceramic element via a clamp, and whose source is grounded. The high input impedance of the field-effect transistor matches the high output impedance of the high-voltage DAC module 2, eliminating the need for additional buffering.

[0064] This application embodiment also provides a welding wire clamp driving device, which includes a welding wire clamp driving circuit and a wire clamp device. The welding wire clamp driving circuit is used to drive the piezoelectric ceramic part of the wire clamp device to extend and retract according to the voltage change, so as to drive the wire clamp arm of the wire clamp device to open, close or hold. The welding wire clamp driving circuit adopts the welding wire clamp driving circuit as described in any of the above.

[0065] This embodiment, by employing an atomizing device with a welding clamp drive circuit as described in any of the above embodiments, can effectively achieve flexible adjustment of the output voltage of the high-voltage conversion module and effectively save costs.

[0066] Obviously, the embodiments described above are only some embodiments of this application, not all embodiments. The accompanying drawings show preferred embodiments of this application, but do not limit the patent scope of this application. This application can be implemented in many different forms; rather, the purpose of providing these embodiments is to provide a more thorough and comprehensive understanding of the disclosure of this application. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing specific embodiments, or make equivalent substitutions for some of the technical features. Any equivalent structures made using the content of this application's specification and drawings, directly or indirectly applied to other related technical fields, are similarly within the scope of patent protection of this application.

Claims

1. A welding wire clamp driving circuit, characterized in that, The welding clamp driving circuit includes: Communication control module, high-voltage DAC conversion module, power output module; The high-voltage DAC conversion module is connected to the communication control module and includes a first resistor unit, a second resistor unit, and a level switching circuit unit. The resistance values ​​of all resistors in the first resistor unit are the same, the resistance values ​​of all resistors in the second resistor unit are the same, and the resistance value of the resistors in the first resistor unit is twice the resistance value of the resistors in the second resistor unit. The first resistor unit and the second resistor unit are connected, the level switching circuit unit is connected to the first resistor unit, and the power output module is connected to the second resistor unit.

2. The welding clamp driving circuit according to claim 1, characterized in that, The first resistor unit includes a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, and a sixth resistor; the second resistor unit includes a seventh resistor, an eighth resistor, a ninth resistor, and a tenth resistor. One end of the first resistor is grounded, the other end of the second resistor is connected to the first resistor, the second resistor unit is connected to the electrical connection point between the first resistor and the second resistor, the third resistor is connected to the electrical connection point between the seventh resistor and the eighth resistor, the fourth resistor is connected to the electrical connection point between the eighth resistor and the ninth resistor, the fifth resistor is connected to the electrical connection point between the ninth resistor and the tenth resistor, and the sixth resistor is connected to the electrical connection point between the tenth resistor and the power output module.

3. The welding clamp driving circuit according to claim 2, characterized in that, The seventh resistor is connected to the electrical connection point between the first resistor and the second resistor. The eighth resistor is connected in series with the seventh resistor. The ninth resistor is connected in series with the eighth resistor. The tenth resistor is connected in series with the ninth resistor. The power output module is connected to the tenth resistor.

4. The welding clamp driving circuit according to claim 3, characterized in that, The level switching circuit unit includes at least five switching circuit element groups, and the second resistor, the third resistor, the fourth resistor, the fifth resistor, and the sixth resistor are each connected to one of the switching circuit element groups; The switching circuit component group includes a first transistor, a second transistor, a third transistor, a first resistor, a second resistor, and a power supply. The first transistor is connected to the communication control module. The second transistor and the third transistor are connected to form a complementary emitter follower and are connected to the first transistor. The first resistor is connected in series between the first transistor and the communication control module, and the second resistor is connected in parallel between the second transistor and the power supply.

5. The welding clamp driving circuit according to claim 4, characterized in that, The base of the first transistor is connected to the first resistor, the collector of the first transistor is connected to the second resistor, and the emitter of the first transistor and the collector of the third transistor are connected to the ground terminal.

6. The welding clamp driving circuit according to claim 5, characterized in that, The base of the second transistor and the second resistor are electrically connected to the collector of the first transistor. The collector of the second transistor is connected to the power supply. The emitter of the second transistor is connected to the emitter of the third transistor.

7. The welding clamp driving circuit according to claim 6, characterized in that, The base of the third transistor and the second resistor are electrically connected to the collector of the first transistor. The collector of the third transistor is connected to the ground terminal. The emitter of the third transistor is connected to the emitter of the second transistor.

8. The welding clamp driving circuit according to claim 7, characterized in that, The second resistor, the third resistor, the fourth resistor, the fifth resistor, and the sixth resistor are all connected to the electrical connection point between the emitter of the second transistor and the emitter of the third transistor in the corresponding switching circuit element group.

9. The welding clamp driving circuit according to claim 8, characterized in that, The first and second transistors are NPN transistors, and the third transistor is a PNP transistor.

10. A welding wire clamp driving device, characterized in that, The welding wire clamp driving device includes a welding wire clamp driving circuit and a wire clamp device. The welding wire clamp driving circuit is used to drive the piezoelectric ceramic part of the wire clamp device to extend and retract according to the voltage change, so as to drive the wire clamp arm of the wire clamp device to open, close or hold. The welding wire clamp driving circuit adopts the welding wire clamp driving circuit as described in any one of claims 1-9.

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