A photovoltaic power semiconductor module junction box assembly

Abstract

The utility model discloses a photovoltaic power semiconductor module terminal box subassembly, including N first terminal box and M second terminal box, N>=1, M>=1, the first terminal box includes first box body, first box cover and installs in the first terminal box first photovoltaic power semiconductor module, the second terminal box includes second box body, second box cover and installs in the second terminal box second photovoltaic power semiconductor module, install heat abstractor in the first terminal box, do not install heat abstractor in the second terminal box, make the first terminal box with second terminal box have same heat dissipation capacity, in the structure through the reasonable setting first terminal box and second terminal box, and install heat abstractor in the first terminal box, and do not install in the second terminal box, make the first terminal box with second terminal box can reach same heat dissipation capacity, and then ensure that the current maximization, avoided the current limited problem caused by the heat dissipation difference of different terminal boxes.

Description

Technical Field

[0001] This utility model relates to the field of photovoltaic power semiconductor module junction boxes, and in particular to a photovoltaic power semiconductor module junction box assembly. Background Technology

[0002] Photovoltaic power semiconductor modules are an important component of photovoltaic modules, primarily used to improve the reliability and efficiency of photovoltaic systems. When a cell in a photovoltaic string experiences current mismatch due to shading, damage, or performance degradation, the bypass module provides a low-resistance bypass path for that cell, allowing current to flow around the faulty cell. This reduces hot spot effects, protects other normally functioning cells from damage, and maintains the overall power generation efficiency of the photovoltaic module.

[0003] Photovoltaic power semiconductor modules are installed in photovoltaic power semiconductor module junction boxes. At present, multiple split junction boxes are used on photovoltaic modules. Each junction box is equipped with one or more bypass diodes, which are electrically connected to the module busbars to realize circuit transmission.

[0004] When using multiple split-type junction boxes, the heat dissipation of the bypass diodes in each junction box is different. For example, if a photovoltaic module has two junction boxes installed on a photovoltaic system, one junction box may have one bypass diode, while the other has two. The junction box with two bypass diodes has a lower heat dissipation capacity than the junction box with one bypass diode, thus affecting the current flowing through the entire bypass module. Even in the most commonly used three-part junction box design, the heat dissipation capacity of the middle junction box is less than that of the left and right side junction boxes.

[0005] Many companies add heat sinks, metal components, and metal blocks to all junction boxes to improve the heat dissipation capacity of the entire photovoltaic power semiconductor module, but this also increases the cost significantly. Utility Model Content

[0006] The technical problem solved by this utility model is to provide a photovoltaic power semiconductor module junction box assembly that can maximize current flow while saving costs.

[0007] The technical solution adopted by this utility model to solve its technical problem is: a photovoltaic power semiconductor module junction box assembly, including N first junction boxes and M second junction boxes, where N≥1 and M≥1;

[0008] The first junction box includes a first box body, a first box cover, and a first photovoltaic power semiconductor module installed inside the first junction box;

[0009] The second junction box includes a second box body, a second box cover, and a second photovoltaic power semiconductor module installed inside the second junction box;

[0010] The first junction box is equipped with a heat dissipation device, while the second junction box is not equipped with a heat dissipation device, so that the first junction box and the second junction box have the same heat dissipation capacity.

[0011] Furthermore, the first photovoltaic power semiconductor module includes a diode body, with a positive terminal and a negative terminal fixedly connected to both ends of the diode body, and the heat dissipation device is in contact with the positive terminal and / or the negative terminal.

[0012] Alternatively, the first photovoltaic power semiconductor module may include a diode body, with a positive electrode pin and a first conductor electrically connected to the positive electrode pin, and a negative electrode pin and a second conductor electrically connected to the negative electrode pin, the two ends of which are fixedly connected. The heat dissipation device is in contact with the first conductor and / or the second conductor.

[0013] Furthermore, the first photovoltaic power semiconductor module is an axial diode or a chip or MOSFET with a PN junction or a surface-mount diode.

[0014] Furthermore, the heat dissipation device is connected to the first photovoltaic power semiconductor module by welding, pressing, and snap-fitting.

[0015] Furthermore, the heat dissipation device is vertically connected to the first photovoltaic power semiconductor module, and the heat dissipation device is arranged along the vertical direction of the first housing.

[0016] Furthermore, the heat dissipation device is welded to the first photovoltaic power semiconductor module at its end edge.

[0017] Furthermore, the heat dissipation device is fixed between the first housing and the first photovoltaic power semiconductor module, the heat dissipation device is installed inside the first housing, and the heat dissipation device is in contact with the first photovoltaic power semiconductor module.

[0018] Furthermore, the first bottom of the heat dissipation device abuts against the second bottom of the first housing, the first sidewall of the heat dissipation device abuts against the second sidewall of the first housing or the support portion of the first power semiconductor module inside the first housing, and the top of the heat dissipation device is in close contact with the surface of the positive pin or negative pin or the first conductor or the second conductor.

[0019] Furthermore, the heat dissipation device has a hollow structure in the middle or a grid-like structure in the middle.

[0020] Furthermore, the heat dissipation device has a hollow structure in the middle or a grid-like structure in the middle.

[0021] Furthermore: there is one first junction box, which is the middle junction box; there are two second junction boxes, which are the left junction box and the right junction box; the second photovoltaic power semiconductor module includes a diode body, and the two ends of the diode body are fixedly connected with a positive terminal pin and a negative terminal pin.

[0022] The beneficial effects of this invention are as follows: By rationally arranging the first and second junction boxes and installing a heat dissipation device inside the first junction box while leaving the second junction box empty, both junction boxes achieve the same heat dissipation capacity. This arrangement ensures overall heat dissipation while eliminating the need for high-cost components such as heat sinks in all junction boxes, effectively saving costs. Furthermore, this structural optimization ensures maximum current flow, avoiding current limitation caused by differences in heat dissipation between different junction boxes, thus improving the overall efficiency and reliability of the photovoltaic power semiconductor module junction box assembly and ultimately enhancing the overall performance of the photovoltaic system. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of the structure of a photovoltaic power semiconductor module junction box assembly according to an embodiment of this application.

[0024] Figure 2 This is an exploded view of a photovoltaic power semiconductor module junction box assembly according to an embodiment of this application.

[0025] Figure 3 This is a cross-sectional view of the first junction box of a photovoltaic power semiconductor module junction box assembly according to an embodiment of this application.

[0026] Figure 4 This is a schematic diagram of the internal structure of the first junction box of a photovoltaic power semiconductor module junction box assembly according to an embodiment of this application.

[0027] Figure 5 This is a schematic diagram of the second internal structure of the first junction box of a photovoltaic power semiconductor module junction box assembly according to an embodiment of this application.

[0028] Figure 6 This is a schematic diagram of the internal structure of the first junction box of a photovoltaic power semiconductor module junction box assembly according to an embodiment of this application.

[0029] Figure 7 This is a schematic diagram of the third internal structure of the first junction box of a photovoltaic power semiconductor module junction box assembly according to an embodiment of this application.

[0030] Figure 8 This is a schematic diagram of the fourth internal structure of the first junction box of a photovoltaic power semiconductor module junction box assembly according to an embodiment of this application.

[0031] Figure 9 This is a schematic diagram of the structure of a heat dissipation device for a photovoltaic power semiconductor module junction box assembly in an embodiment of this application when it is hollowed out.

[0032] Figure 10 This is a schematic diagram of the structure of a second photovoltaic power semiconductor module in a photovoltaic power semiconductor module junction box assembly according to an embodiment of this application.

[0033] Figure 11 This is a schematic diagram of the structure of a second photovoltaic power semiconductor module from another perspective, representing an embodiment of the present application.

[0034] The components in the diagram are labeled as follows: First junction box 1, First box body 11, Second bottom 111, Support part 112, First box cover 12, First photovoltaic power semiconductor module 13, Diode body 131, Positive pin 132, Negative pin 133, First conductor 134, Second conductor 135, Second junction box 2, Second box body 21, Second box cover 22, Second photovoltaic power semiconductor module 23, Heat dissipation device 14, First bottom 141, First side wall 142, Top 143. Detailed Implementation

[0035] To make the above-mentioned objectives, features and advantages of this utility model more apparent and understandable, the specific embodiments of this utility model will be described in detail below with reference to the accompanying drawings.

[0036] like Figure 1 and Figure 2 As shown, an embodiment of this application discloses a photovoltaic power semiconductor module junction box assembly, including N first junction boxes 1 and M second junction boxes 2, where N≥1 and M≥1;

[0037] The first junction box 1 includes a first box body 11, a first box cover 12, and a first photovoltaic power semiconductor module 13 installed inside the first junction box 1;

[0038] The second junction box 2 includes a second box body 21, a second box cover 22, and a second photovoltaic power semiconductor module 23 installed inside the second junction box 2;

[0039] The first junction box 1 is equipped with a heat dissipation device 14, while the second junction box 2 is not equipped with a heat dissipation device 14, so that the first junction box 1 and the second junction box 2 have the same heat dissipation capacity.

[0040] Specifically, in the above structure, since the heat dissipation requirement of the first junction box 1 is greater than that of the second junction box 2, a heat dissipation device 14 is installed in the first junction box 1. This allows the heat generated when the first photovoltaic power semiconductor module 13 is working to be quickly dissipated through the heat dissipation device 14. For the second junction box 2, since its heat dissipation requirement is relatively smaller, no heat dissipation device 14 is installed. This allows the first junction box 1 and the second junction box 2 to achieve similar heat dissipation effects during operation.

[0041] This design avoids the increased cost associated with installing heat dissipation devices 14 in all junction boxes, while also ensuring the overall balance of heat dissipation performance.

[0042] In this embodiment, as Figure 4 and Figure 5 As shown, the first photovoltaic power semiconductor module 13 includes a diode body 131, with a positive pin 132 and a negative pin 133 fixedly connected to both ends of the diode body 131. The heat dissipation device 14 is in contact with the positive pin 132 and / or the negative pin 133.

[0043] It should be explained that the heat dissipation device 14 may only contact the pin that requires a lot of heat dissipation in the positive pin 132 or the negative pin 133, or two heat dissipation devices 14 may be designed to contact the positive pin 132 or the negative pin 133 respectively.

[0044] Specifically, the diode body 131 generates heat during operation, which is mainly conducted away through the positive terminal 132 and the negative terminal 133. By connecting the heat dissipation device 14 to the positive terminal 132 and / or the negative terminal 133, the heat dissipation device 14 can directly absorb the heat conducted from the diode body 131 and then quickly dissipate the heat outward, thereby effectively reducing the temperature of the first photovoltaic power semiconductor module 13 and ensuring its normal operation.

[0045] In this embodiment, the first photovoltaic power semiconductor module 13 includes a diode body 131. The diode body 131 is fixedly connected to a positive electrode pin 132 and a first conductor 134 electrically connected to the positive electrode pin 132, and a negative electrode pin 133 and a second conductor 135 electrically connected to the negative electrode pin 133. The heat dissipation device 14 is in contact with the first conductor 134 and / or the second conductor 135.

[0046] Specifically, in this structure, through the arrangement of the first and second conductors, in practical applications, the heat generated by the diode body 131 is first conducted to the positive terminal 132 and the negative terminal 133, and then further dispersed through the first conductor 134 and the second conductor 135 electrically connected to them. The design of the heat dissipation device 14 being in contact with the first conductor 134 and / or the second conductor 135 allows heat to be transferred more efficiently from the conductors to the heat dissipation device 14, and then quickly dissipated into the surrounding environment through the surface of the heat dissipation device 14.

[0047] In this embodiment, as Figures 6 to 8 As shown, the first photovoltaic power semiconductor module (13) is an axial diode or a chip or MOS transistor with PN level or a surface mount diode.

[0048] Specifically, during the design process, axial diodes, PN-level chip diodes, MOSFETs, or surface-mount diodes can be selected according to actual needs. For example, axial diodes are characterized by simple structure and low cost, while MOSFETs have advantages such as fast switching speed and high input impedance. Surface-mount diodes are characterized by small size and easy installation, making them suitable for use in junction boxes with limited space. Flexibly selecting different types of diode bodies (131) according to actual needs can better meet the performance requirements and operating environments of different photovoltaic systems.

[0049] In this embodiment, the heat dissipation device 14 is connected to the first photovoltaic power semiconductor module 13 by welding, pressing and snapping.

[0050] Specifically, when welding is used, a stable and reliable connection is ensured between the heat dissipation device 14 and the first photovoltaic power semiconductor module 13. This connection method is suitable for scenarios requiring high connection strength, long-term use, and relatively stable environments, effectively preventing poor heat dissipation due to loose connections. The press-fit method uses external force to tightly press the heat dissipation device 14 and the first photovoltaic power semiconductor module 13 together. Its advantage lies in convenient installation and disassembly, allowing for quick completion of operations when periodic maintenance or replacement of the heat dissipation device 14 is required, reducing maintenance time and costs. The snap-fit ​​method utilizes a specific snap-fit ​​structure to achieve rapid connection and fixation between the heat dissipation device 14 and the first photovoltaic power semiconductor module 13. This method features high installation efficiency and is particularly suitable for large-scale production processes, improving production efficiency and reducing production costs.

[0051] In this embodiment, the heat dissipation device 14 is vertically connected to the first photovoltaic power semiconductor module 13, and the heat dissipation device 14 is arranged along the vertical direction of the first housing 11.

[0052] Specifically, the heat dissipation device 14 is vertically connected to the first photovoltaic power semiconductor module 13 and arranged along the vertical direction of the first housing 11. This layout can make full use of the space inside the first housing 11 and maximize the contact area between the heat dissipation device 14 and the air. During the heat dissipation process, heat can be quickly dissipated into the surrounding environment along the vertical direction of the heat dissipation device 14, effectively improving the heat dissipation efficiency.

[0053] In this embodiment, the heat dissipation device 14 is welded to the first photovoltaic power semiconductor module 13 at the end edge.

[0054] Specifically, the heat dissipation device 14 is welded to the first photovoltaic power semiconductor module 13 at the end edge. This method facilitates welding and ensures both the stability of the installation and its aesthetic appeal.

[0055] In this embodiment, the heat dissipation device 14 is fixed between the first housing 11 and the first photovoltaic power semiconductor module 13. The heat dissipation device 14 is installed inside the first housing 11 and is attached to the first photovoltaic power semiconductor module 13.

[0056] Specifically, the heat dissipation device 14 is fixed between the first housing 11 and the first photovoltaic power semiconductor module 13. This design ensures that the heat dissipation device 14 is securely installed inside the first housing 11. Furthermore, the close contact between the heat dissipation device 14 and the first photovoltaic power semiconductor module 13 allows heat to be conducted more quickly from the first photovoltaic power semiconductor module 13 to the heat dissipation device 14, and then dissipated into the surrounding environment through the heat dissipation device 14. This structure not only improves heat dissipation efficiency but also ensures the temperature stability of the first photovoltaic power semiconductor module 13 during operation, contributing to improved performance and reliability of the entire photovoltaic power semiconductor module junction box assembly.

[0057] In this embodiment, the heat dissipation device 14 is fixed between the first housing 11 and the first photovoltaic power semiconductor module 13. The heat dissipation device 14 is installed inside the first housing 11 and is attached to the first photovoltaic power semiconductor module 13.

[0058] Specifically, the design of the heat dissipation device 14 being tightly fitted to the first photovoltaic power semiconductor module 13 in this structure allows heat to be transferred from the first photovoltaic power semiconductor module 13 to the heat dissipation device 14 via the shortest path, reducing thermal resistance loss. At the same time, the heat dissipation device 14 is firmly fixed inside the first housing 11, which not only prevents displacement caused by vibration during transportation or use, but also ensures structural stability for long-term use.

[0059] In this embodiment, the first bottom 141 of the heat dissipation device 14 abuts against the second bottom 111 of the first housing 11, the first sidewall 142 of the heat dissipation device 14 abuts against the second sidewall of the first housing 11 or the support portion 112 of the first power semiconductor module inside the first housing 11, and the top 143 of the heat dissipation device 14 is in close contact with the surface of the positive pin 132 or the negative pin 133 or the first conductor 134 or the second conductor 135.

[0060] Specifically, the first bottom 141 of the heat dissipation device 14 abuts against the second bottom 111 of the first housing 11, providing stable support and ensuring the vertical stability of the heat dissipation device 14. Its first sidewall 142 abuts against the second sidewall of the first housing 11 or the support portion 112 of the first power semiconductor module inside the first housing 11, further enhancing the horizontal stability of the heat dissipation device 14 and preventing displacement due to shaking or vibration during operation, thus affecting the heat dissipation effect. The top 143 of the heat dissipation device 14 is in close contact with the surface of the positive pin 132, negative pin 133, first conductor 134, or second conductor 135, ensuring that heat can be quickly conducted from the first photovoltaic power semiconductor module 13 to the heat dissipation device 14. This comprehensive, close-contact design maximizes heat transfer efficiency and ensures stable operation.

[0061] In this embodiment, as Figure 6 and Figure 9 As shown, the heat dissipation device 14 has a hollow structure in the middle or a grid-like structure in the middle.

[0062] Specifically, the two structural methods mentioned above can increase the contact area with air to achieve rapid heat dissipation, and save on the use of materials, making the heat dissipation device 14 lighter and more economical while meeting the heat dissipation requirements.

[0063] In this embodiment, the heat dissipation device 14 is made of aluminum, copper, or a high thermal conductivity ceramic material.

[0064] Specifically, aluminum, copper, or high thermal conductivity ceramic materials all have good thermal conductivity, which can improve the heat dissipation efficiency of the heat dissipation device 14, thereby ensuring the heat dissipation of the entire product.

[0065] In this embodiment, as Figure 1 , Figure 2 , Figure 10 and Figure 11As shown, there is one first junction box 1, which is the middle junction box. There are two second junction boxes 2, which are the left junction box and the right junction box. The second photovoltaic power semiconductor module 23 includes a diode body 231, and the two ends of the diode body 231 are fixedly connected to a positive electrode pin 232 and a negative electrode pin 233.

[0066] In this embodiment, since the left and right junction boxes dissipate more heat than the middle junction box during operation, heat dissipation devices 14 are installed in the left and right junction boxes, while no heat dissipation device 14 is installed in the middle junction box. This ensures that the left, right, and middle junction boxes achieve similar heat dissipation effects during operation. This design significantly reduces material and installation costs, thereby helping to improve the product's market competitiveness.

[0067] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of this utility model. It should be understood that the above descriptions are merely specific embodiments of this utility model and are not intended to limit this utility model. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this utility model should be included within the protection scope of this utility model.

Claims

1. A photovoltaic power semiconductor module junction box assembly, characterized in that: It includes N first junction boxes (1) and M second junction boxes (2), where N≥1 and M≥1; The first junction box (1) includes a first box body (11), a first box cover (12) and a first photovoltaic power semiconductor module (13) installed inside the first junction box (1). The second junction box (2) includes a second box body (21), a second box cover (22), and a second photovoltaic power semiconductor module (23) installed inside the second junction box (2). The first junction box (1) is equipped with a heat dissipation device (14), while the second junction box (2) is not equipped with a heat dissipation device (14), so that the first junction box (1) and the second junction box (2) have the same heat dissipation capacity.

2. The photovoltaic power semiconductor module junction box assembly as described in claim 1, characterized in that: The first photovoltaic power semiconductor module (13) includes a diode body, with a positive terminal pin and a negative terminal pin fixedly connected at both ends of the diode body, and the heat dissipation device (14) is in contact with the positive terminal pin and / or the negative terminal pin; Alternatively, the first photovoltaic power semiconductor module (13) may include a diode body, with a positive electrode pin and a first conductor (134) electrically connected to the positive electrode pin and a negative electrode pin and a second conductor (135) electrically connected to the negative electrode pin fixedly connected at both ends of the diode body, and the heat dissipation device (14) is in contact with the first conductor (134) and / or the second conductor (135).

3. The photovoltaic power semiconductor module junction box assembly as described in claim 2, characterized in that: The heat dissipation device (14) is connected to the first photovoltaic power semiconductor module (13) by welding, pressing and snapping.

4. The photovoltaic power semiconductor module junction box assembly as described in claim 3, characterized in that: The heat dissipation device (14) is vertically connected to the first photovoltaic power semiconductor module (13), and the heat dissipation device (14) is arranged along the vertical direction of the first box (11).

5. The photovoltaic power semiconductor module junction box assembly as described in claim 3, characterized in that: The heat dissipation device (14) is welded to the first photovoltaic power semiconductor module (13) at the end edge.

6. The photovoltaic power semiconductor module junction box assembly as described in claim 3, characterized in that: The heat dissipation device (14) is fixed between the first housing (11) and the first photovoltaic power semiconductor module (13). The heat dissipation device (14) is installed inside the first housing (11) and is attached to the first photovoltaic power semiconductor module (13).

7. The photovoltaic power semiconductor module junction box assembly as described in claim 6, characterized in that: The first bottom (141) of the heat dissipation device (14) abuts against the second bottom (111) of the first box (11), the first sidewall (142) of the heat dissipation device (14) abuts against the second sidewall of the first box (11) or the support part (112) of the first power semiconductor module inside the first box (11), and the top (143) of the heat dissipation device (14) is in close contact with the surface of the positive electrode pin (132) or the negative electrode pin (133) or the first conductor (134) or the second conductor (135).

8. The photovoltaic power semiconductor module junction box assembly as described in claim 1, characterized in that: The heat dissipation device (14) has a hollow structure in the middle or a grid-like structure in the middle.

9. The photovoltaic power semiconductor module junction box assembly as described in claim 1, characterized in that: The heat dissipation device (14) is made of aluminum, copper or high thermal conductivity ceramic material.

10. The photovoltaic power semiconductor module junction box assembly as described in claim 2, characterized in that: The first junction box (1) is one, and the first junction box (1) is the middle junction box. The second junction box (2) is two, and the second junction box (2) is the left junction box and the right junction box. The second photovoltaic power semiconductor module (23) includes a diode body, and the two ends of the diode body are fixedly connected with a positive electrode pin and a negative electrode pin.

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