Variable resistance heater for seed crystal bonding

CN224844067UActive Publication Date: 2026-10-09JIANGSU STARLIGHT TECH CO LTD
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Patent Information

Application Number
CN202522354241.2
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-11-06
Publication Date
2026-10-09
Estimated Expiration
2035-11-06

AI Technical Summary

Technical Problem

由于中心处较边缘处散热慢,在碳化硅籽晶粘接时加热器的中心与边缘存在一个径向的温度梯度,导致中心温度比边缘温度高出20-30℃,难以满足碳化硅籽晶粘接的工艺要求

Benefits of technology

[0015]由于上述技术方案的运用,本实用新型与现有技术相比具有下列优点:本实用新型用于籽晶粘接的变电阻加热器,将依次串联的多条第一弧形部和依次串联的多条第二弧形部相互串联得到多圈电阻,并设置各圈电阻的横截面积由外向内依次递增,从而能够由外向内逐圈进行温度补偿,降低粘接的碳化硅籽晶中心处和边缘处的温度差,进而能够满足碳化硅籽晶粘接温度均匀性的工艺要求。

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Abstract

The utility model discloses a variable resistance heater for seed crystal bonding, including resistance strip, resistance strip includes first end and second end, the concentricity of a section from first end to middle is bent and coiled and forms a plurality of first arc sections who are connected head to tail in turn in plane, the concentricity of a section from second end to middle is bent and coiled and forms a plurality of second arc sections who are connected head to tail in turn, a plurality of first arc sections are arranged in turn and are spaced apart along the direction of circumferentially pointing to the center of circle, a plurality of second arc sections are arranged in turn and are spaced apart along the direction of circumferentially pointing to the center of circle, and the number of turns of first arc section and second arc section is same and radius corresponds equal, and both are used for mutually matchedly surrounding and forming multi-turn resistance, the cross -sectional area of each turn resistance is increased in turn from outside to inside. The utility model discloses a variable resistance heater for seed crystal bonding, can carry out temperature compensation from outside to inside turn by turn, reduces the temperature difference of center and edge, satisfies the process requirement of silicon carbide seed crystal bonding.
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Description

Technical Field

[0001] This utility model relates to the field of silicon carbide seed bonding technology, and in particular to a variable resistance heater for seed bonding. Background Technology

[0002] Existing heaters used for seed crystal bonding are generally flat-plate equal-resistance heaters with a uniform cross-sectional area. Because heat dissipation is slower at the center than at the edges, a radial temperature gradient exists between the center and edge of the heater during silicon carbide seed crystal bonding. This results in the center temperature being 20-30°C higher than the edge temperature, making it difficult to meet the process requirements for silicon carbide seed crystal bonding. Utility Model Content

[0003] The purpose of this invention is to provide a variable resistance heater for seed crystal bonding, which can perform temperature compensation ring by ring from the outside to the inside, reduce the temperature difference between the center and the edge, and thus meet the process requirements of silicon carbide seed crystal bonding.

[0004] To achieve the above objectives, the technical solution adopted by this utility model is as follows:

[0005] A variable resistance heater for seed crystal bonding includes a resistance strip, which comprises a first end and a second end, multiple concentrically arranged and sequentially connected first arc-shaped portions formed by bending and coiling a section from the first end to the middle in a plane, and multiple concentrically arranged and sequentially connected second arc-shaped portions formed by bending and coiling a section from the second end to the middle in a plane. The multiple first arc-shaped portions are arranged at intervals along the circumference towards the center, and the multiple second arc-shaped portions are arranged at intervals along the circumference towards the center. The number of turns of the first arc-shaped portions and the radii of the second arc-shaped portions are the same and correspondingly equal, and they are used to cooperate to form multiple turns of resistance; the cross-sectional area of ​​each turn of resistance increases sequentially from the outside to the inside.

[0006] Preferably, the first arcuate portion and the corresponding second arcuate portion are spaced apart along their circumference.

[0007] More preferably, the first end and the second end are spaced apart, the first arc-shaped portion and the corresponding second arc-shaped portion of the innermost ring have a first interval along their circumference, and the first arc-shaped portion and the corresponding second arc-shaped portion of each of the remaining rings have two first intervals along their circumference.

[0008] More preferably, the width of the first interval in each circle is the same.

[0009] Preferably, the width of each resistor ring is the same, and its thickness increases sequentially from the outside to the inside.

[0010] Preferably, the thickness of each resistor ring is the same, and its width increases sequentially from the outside to the inside.

[0011] Preferably, the width and thickness of each resistor ring increase sequentially from the outside to the inside.

[0012] Preferably, the plurality of first arc-shaped portions are arranged at equal intervals along the circumference towards the center, and the plurality of second arc-shaped portions are arranged at equal intervals along the circumference towards the center, and the spacing between any two of the plurality of first arc-shaped portions is the same as the spacing between any two of the plurality of second arc-shaped portions.

[0013] Preferably, the first end is parallel to the radial direction of the outermost first arc-shaped portion, and the second end is parallel to the radial direction of the outermost second arc-shaped portion.

[0014] More preferably, the first end is parallel to the second end.

[0015] Due to the application of the above technical solution, this utility model has the following advantages compared with the prior art: The variable resistance heater of this utility model for seed crystal bonding connects multiple first arc-shaped parts and multiple second arc-shaped parts connected in series to obtain multiple turns of resistance, and sets the cross-sectional area of ​​each turn of resistance to increase sequentially from the outside to the inside, thereby enabling temperature compensation from the outside to the inside turn by turn, reducing the temperature difference between the center and the edge of the bonded silicon carbide seed crystal, and thus meeting the process requirements of uniform temperature of silicon carbide seed crystal bonding. Attached Figure Description

[0016] Appendix Figure 1 This is a schematic diagram of the structure of a variable resistance heater used for seed crystal bonding according to a specific embodiment of the present invention;

[0017] Appendix Figure 2 For the appendix Figure 1 A schematic diagram of the cross-sectional structure along line AA.

[0018] Wherein: 1. First end; 2. Second end; 3. First arc-shaped portion; 4. Second arc-shaped portion; 5. First interval;

[0019] S1, First cross section; S2, Second cross section; S3, Third cross section; S4, Fourth cross section; S5, Fifth cross section; S6, Sixth cross section. Detailed Implementation

[0020] The technical solution of this utility model will be further described below with reference to specific embodiments and accompanying drawings.

[0021] In the following description, only certain exemplary embodiments are briefly described. As those skilled in the art will recognize, the described embodiments can be modified in various ways without departing from the spirit or scope of the present invention. Therefore, the drawings and description are considered to be exemplary in nature and not restrictive.

[0022] In the description of the embodiments of this utility model, it should be understood that the terms "length", "inner", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the embodiments of this utility model and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the embodiments of this utility model.

[0023] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of embodiments of this utility model, "a plurality of" means two or more, unless otherwise explicitly specified.

[0024] In this embodiment of the invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a communication connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this embodiment of the invention according to the specific circumstances.

[0025] In this embodiment of the invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0026] The following disclosure provides many different implementations or examples for different structures of the embodiments of the present invention. To simplify the disclosure of the embodiments of the present invention, specific examples of components and arrangements are described below. Of course, these are merely examples and are not intended to limit the embodiments of the present invention. Furthermore, reference numerals and / or reference letters may be repeated in different examples of the embodiments of the present invention; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various implementations and / or arrangements discussed.

[0027] See Figure 1-2 As shown, this embodiment provides a variable resistance heater for seed crystal bonding, including a resistance strip. The resistance strip includes a first end 1 and a second end 2, multiple concentrically arranged and sequentially connected first arc-shaped portions 3 formed by bending and coiling a section from the first end 1 to the middle in a plane, and multiple concentrically arranged and sequentially connected second arc-shaped portions 4 formed by bending and coiling a section from the second end 2 to the middle in a plane. The multiple first arc-shaped portions 3 are arranged at intervals along the circumference pointing towards the center, and the multiple second arc-shaped portions 4 are arranged at intervals along the circumference pointing towards the center.

[0028] The middle part can be the center of the resistor bar, or it can be a position slightly offset from the first end 1, or it can be a position slightly offset from the second end 2.

[0029] The first arc-shaped portion 3 and the second arc-shaped portion 4 have the same number of turns and the radii of the corresponding turns are equal. They are used to cooperate with each other to form a multi-turn resistor.

[0030] See Figure 1 As shown, the first arc-shaped portion 3 and the second arc-shaped portion 4 each have six rings, which, counting from the outside in, are the first ring of resistors, the second ring of resistors, the third ring of resistors, the fourth ring of resistors, the fifth ring of resistors, and the sixth ring of resistors. The radii of the first arc-shaped portion 3 and the second arc-shaped portion 4 corresponding to the first ring of resistors are equal; the radii of the first arc-shaped portion 3 and the second arc-shaped portion 4 corresponding to the second ring of resistors are equal; the radii of the first arc-shaped portion 3 and the second arc-shaped portion 4 corresponding to the third ring of resistors are equal; the radii of the first arc-shaped portion 3 and the second arc-shaped portion 4 corresponding to the fourth ring of resistors are equal; the radii of the first arc-shaped portion 3 and the second arc-shaped portion 4 corresponding to the fifth ring of resistors are equal; and the radii of the first arc-shaped portion 3 and the second arc-shaped portion 4 corresponding to the sixth ring of resistors are equal.

[0031] See Figure 2As shown, the cross-sectional area of ​​each resistor ring increases sequentially from the outside to the inside, i.e., the area of ​​the first cross-section S1 < the area of ​​the second cross-section S2 < the area of ​​the third cross-section S3 < the area of ​​the fourth cross-section S4 < the area of ​​the fifth cross-section S5 < the area of ​​the sixth cross-section S6. This arrangement allows for temperature compensation ring by ring from the outside in, reducing the temperature difference between the center and edge of the bonded silicon carbide seed crystal (which can be controlled within 5-10℃), thereby meeting the process requirements for uniform temperature during silicon carbide seed crystal bonding.

[0032] In this embodiment, the width of each resistor loop is the same, and its thickness increases sequentially from the outside to the inside.

[0033] In Example 2, the thickness of each resistor ring is the same, and its width increases sequentially from the outside to the inside.

[0034] In Example 3, the width and thickness of each resistor loop increase sequentially from the outside to the inside.

[0035] See Figure 1 As shown, the first arc-shaped portion 3 and the corresponding second arc-shaped portion 4 are spaced apart along their circumference. The first end portion 1 and the second end portion 2 are spaced apart, the innermost first arc-shaped portion 3 and the corresponding second arc-shaped portion 4 have a first interval 5 along their circumference, and the remaining first arc-shaped portions 3 and the corresponding second arc-shaped portions 4 each have two first intervals 5 along their circumference.

[0036] Multiple first arc-shaped portions 3 and multiple second arc-shaped portions 4 are connected in series through the innermost first arc-shaped portion 3 and the second arc-shaped portion 4; the interval between the first end portion 1 and the second end portion 2 belongs to one of the two first intervals 5 between the outermost first arc-shaped portion 3 and the corresponding second arc-shaped portion 4.

[0037] In this embodiment, the width of the first interval 5 in each ring is the same.

[0038] See Figure 1 As shown, multiple first arc-shaped portions 3 are arranged at equal intervals along the circumference towards the center, and multiple second arc-shaped portions 4 are arranged at equal intervals along the circumference towards the center. The spacing between any two first arc-shaped portions 3 is the same as the spacing between any two second arc-shaped portions 4.

[0039] In this embodiment, the first end 1 is parallel to the radial direction of the outermost first arc-shaped portion 3, and the second end 2 is parallel to the radial direction of the outermost second arc-shaped portion 4, with the first end 1 being parallel to the second end 2. The first end 1 and the second end 2 are used to connect the positive and negative terminals of the power supply, respectively.

[0040] The above embodiments are only for illustrating the technical concept and features of this utility model, and are intended to enable those skilled in the art to understand the content of this utility model and implement it accordingly. They should not be construed as limiting the scope of protection of this utility model. All equivalent changes or modifications made in accordance with the spirit and essence of this utility model should be included within the scope of protection of this utility model.

Claims

1. A variable resistance heater for seed crystal bonding, characterized in that: The device includes a resistor strip comprising a first end and a second end, multiple concentrically arranged and sequentially connected first arc-shaped sections formed by bending and coiling a section from the first end to the middle in a plane, and multiple concentrically arranged and sequentially connected second arc-shaped sections formed by bending and coiling a section from the second end to the middle in a plane. The multiple first arc-shaped sections are arranged at intervals along the circumference towards the center, and the multiple second arc-shaped sections are arranged at intervals along the circumference towards the center. The number of turns of the first arc-shaped sections and the second arc-shaped sections are the same and their radii are correspondingly equal. They are used to cooperate with each other to form a multi-turn resistor. The cross-sectional area of ​​each turn of the resistor increases sequentially from the outside to the inside.

2. The variable resistance heater for seed crystal bonding according to claim 1, characterized in that: The first arc-shaped portion and the corresponding second arc-shaped portion are spaced apart along their circumference.

3. The variable resistance heater for seed crystal bonding according to claim 2, characterized in that: The first end and the second end are spaced apart. The first arc-shaped portion and the corresponding second arc-shaped portion of the innermost circle have a first interval along their circumference, and the first arc-shaped portion and the corresponding second arc-shaped portion of each of the remaining circles have two first intervals along their circumference.

4. The variable resistance heater for seed crystal bonding according to claim 3, characterized in that: The width of the first interval in each circle is the same.

5. The variable resistance heater for seed crystal bonding according to claim 1, characterized in that: The resistors described in each loop have the same width, and their thickness increases sequentially from the outside to the inside.

6. The variable resistance heater for seed crystal bonding according to claim 1, characterized in that: The thickness of each resistor is the same, and its width increases sequentially from the outside to the inside.

7. The variable resistance heater for seed crystal bonding according to claim 1, characterized in that: The width and thickness of the resistors in each ring increase sequentially from the outside to the inside.

8. The variable resistance heater for seed crystal bonding according to claim 1, characterized in that: Multiple first arc-shaped portions are arranged at equal intervals along the circumference towards the center, and multiple second arc-shaped portions are arranged at equal intervals along the circumference towards the center. The spacing between any two first arc-shaped portions is the same as the spacing between any two second arc-shaped portions.

9. The variable resistance heater for seed crystal bonding according to claim 1, characterized in that: The first end is parallel to the radial direction of the outermost first arc-shaped portion, and the second end is parallel to the radial direction of the outermost second arc-shaped portion.

10. The variable resistance heater for seed crystal bonding according to claim 9, characterized in that: The first end is parallel to the second end.