Dual glass color photovoltaic module
Patent Information
- Application Number
- CN202521961732.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-12
- Publication Date
- 2026-10-09
- Estimated Expiration
- 2035-09-12
AI Technical Summary
[0005]本实用新型的目的是提供一种双玻彩色光伏组件,解决了现有光伏组件重量过大,离子扩散,以及光电层与彩色镀膜层的热膨胀系数差异显著的问题,总重可减25%以上,适用于轻钢屋顶和工商业彩钢瓦
1、本实用新型组件的总重可减25%以上,运输、吊装及屋顶荷载要求同步降低,尤其适用于轻钢屋顶和工商业彩钢瓦。
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Figure CN224844622U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to a photovoltaic module, specifically a double-glass color photovoltaic module. Background Technology
[0002] Traditional colored photovoltaic modules typically employ a three-layer laminated glass structure, consisting of a front glass panel, an intermediate glass panel, and a back glass panel. The colored coating layer is applied to the inner surface of the front glass panel, while the photovoltaic layer is applied to the inner surface of the intermediate glass panel. While this technology allows for customized building exterior colors, it has significant drawbacks: firstly, the three-layer glass structure results in excessive module weight, approximately 25 kg / m². 2 ~30kg / m 2 This not only increases installation difficulty and cost but also places excessive structural load on lightweight walls, making it unsuitable for lightweight wall applications such as industrial plants. Secondly, under high-temperature processing conditions, metal ions in the colored coating layer easily diffuse to the photoelectric layer, affecting power generation efficiency by approximately 5% to 8% and causing the coating layer to fade. Furthermore, the significant difference in thermal expansion coefficients between the photoelectric layer and the colored coating layer (approximately 3 × 10⁻⁶) further complicates the process. -6 At / ℃, long-term use can easily generate interfacial stress, leading to component cracking and shortening the service life to less than 15 years.
[0003] Existing document 1 (Chinese Patent Application No. CN113421932B) discloses a colored photovoltaic module and its preparation method. The colored photovoltaic module includes a front glass layer, a power generation glass layer, and a back glass layer. The power generation glass layer has adhesive on both sides. The front glass of the front glass layer has a pattern composed of several colored glaze dots with a diameter of 10μm to 100μm and a gap of 50μm to 200μm between adjacent colored glaze dots. The thickness of the front glass is 5mm to 6mm.
[0004] However, Reference 1 still suffers from the three major shortcomings mentioned above: weight, ion diffusion, and thermal mismatch. It cannot fundamentally solve the problems of bulky structure, ion contamination, and thermal stress, and often leads to an increase in production costs of 20% to 30%, which seriously restricts the commercial application of the product. Utility Model Content
[0005] The purpose of this invention is to provide a double-glass colored photovoltaic module that solves the problems of excessive weight, ion diffusion, and significant differences in the thermal expansion coefficients of the photoelectric layer and the colored coating layer in existing photovoltaic modules. The total weight can be reduced by more than 25%, and it is suitable for light steel roofs and industrial and commercial color steel tiles.
[0006] To achieve the above objectives, this utility model provides a double-glass color photovoltaic module, which includes: The backplate, located at the bottom of the assembly, has its upper surface tightly bonded to the outer bottom surface of the film layer; the core structure layer, located between the film layer and the barrier layer, has its lower surface tightly bonded to the inner bottom surface of the film layer, and from bottom to top includes a photoelectric layer, a substrate layer, and a stress buffer layer; the photoelectric layer is the core part of the core structure layer, and from bottom to top includes a back electrode, a photoelectric conversion layer, and a transparent electrode layer; the substrate layer, located between the stress buffer layer and the transparent electrode layer, has its lower surface tightly bonded to the upper surface of the transparent electrode layer; the stress buffer layer, located between the barrier layer and the substrate layer, has its lower surface tightly bonded to the upper surface of the substrate layer; the barrier layer, located between the colored enamel layer and the stress buffer layer, has its lower surface tightly bonded to the upper surface of the stress buffer layer; the colored enamel layer, located between the front panel and the barrier layer, has its lower surface tightly bonded to the barrier layer; the front panel, located at the top of the assembly, has its lower surface tightly bonded to the upper surface of the colored enamel layer.
[0007] Preferably, the film layer has a U-shaped vertical cross-section, wrapping the bottom surface and sidewalls of the core structure layer; the upper edge of the film layer is flush with the upper surface of the stress buffer layer and is tightly bonded to the barrier layer; the back electrode is located between the photoelectric conversion layer and the film layer, and its lower surface is tightly bonded to the inner bottom surface of the film layer, serving as a back electrode to collect photogenerated carriers, forming a closed current loop with the transparent electrode layer, and simultaneously reflecting unabsorbed photons back to the photoelectric conversion layer, improving light utilization; the photoelectric conversion layer is located between the transparent electrode layer and the back electrode, and its lower surface is tightly attached to the upper surface of the back electrode; the p2 non-power-generating region is uniformly disposed throughout the photoelectric conversion layer, located between the p1 and p3 non-power-generating regions, and is used to fill conductive... The material transmits electrical signals; the p3 non-power generation region is uniformly disposed throughout the back electrode and the photoelectric conversion layer, blocking the lateral leakage current on the back electrode side and ensuring that the current must be transmitted longitudinally through the p2 non-power generation region; the transparent electrode layer is located between the substrate layer and the photoelectric conversion layer, and its lower surface is closely attached to the upper surface of the photoelectric conversion layer to achieve effective output of photogenerated current; the p1 non-power generation region is uniformly disposed throughout the photoelectric conversion layer and the transparent electrode layer, blocking the lateral leakage current and preventing crosstalk between adjacent photovoltaic sub-cells; the non-power generation region refers to the area between the p1 non-power generation region and the p3 non-power generation region in a photovoltaic sub-cell; the power generation region is the area between the p3 non-power generation region of the preceding photovoltaic sub-cell and the p1 non-power generation region of the following photovoltaic sub-cell.
[0008] Preferably, the current direction starts from the back electrode, passes through the p2 non-power generation region in the photoelectric conversion layer to the transparent electrode layer, and then returns to the back electrode of the adjacent next photovoltaic cell through the power generation region between the adjacent previous photovoltaic cell and the adjacent next photovoltaic cell, and so on in a cycle.
[0009] Preferably, the upper surface of the stress buffer layer is uniformly provided with grooves, which are embedded in the corresponding grooves on the lower surface of the barrier layer to enhance the stress release effect.
[0010] Preferably, the position of the stress buffer layer protrusion corresponds to the non-power generation area of a photovoltaic sub-cell, and the width of the protrusion is the same as the width of the non-power generation area of a photovoltaic sub-cell, ensuring that stress is concentrated in the non-power generation area and avoiding adverse effects on the power generation area.
[0011] Preferably, the sidewalls of the photoelectric layer, substrate layer and stress buffer layer are aligned and cleaned, and the film layer is used to firmly encapsulate the photoelectric layer, substrate layer and stress buffer layer through hot pressing or lamination process, while providing buffering, moisture protection and insulation protection.
[0012] Preferably, the bottom surface of the film layer is tightly bonded to the back plate, its inner bottom surface is tightly bonded to the bottom surface of the photoelectric layer, and its inner sidewalls are tightly bonded to the sidewalls of the photoelectric layer, the substrate layer, and the stress buffer layer from bottom to top.
[0013] Preferably, the non-power generation region p1 extends into the substrate layer without penetrating it, thereby improving the adhesion between the substrate layer and the transparent electrode layer. At the same time, it forms a local high-resistance region within the substrate layer 23, blocking the lateral leakage current and carrier diffusion in that region.
[0014] Preferably, the colored glaze layer is embedded into the barrier layer in segments without penetrating the barrier layer, and the upper surfaces of the colored glaze layer and the barrier layer are flush.
[0015] Preferably, each segment of the colored glaze layer is aligned with the non-power-generating area of two adjacent photovoltaic sub-cells, the interval between two adjacent segments of the colored glaze layer corresponds to the power-generating area between two adjacent photovoltaic sub-cells, and this interval fills the blocking layer to reduce shading, reduce reflection, and improve light transmittance and power generation efficiency.
[0016] Preferably, the edges from the photoelectric layer to the colored glaze layer are aligned, and the film layer is directly bonded to the front panel, while the edges from the photoelectric layer to the colored glaze layer are sealed to improve the fixing effect.
[0017] Preferably, the barrier layer is made of silicon nitride with a thickness of 20-100 nm; the stress buffer layer is made of TiO2 with a thickness of 50-100 nm; and the substrate layer is made of silicon dioxide with a thickness of 200-500 nm.
[0018] Preferably, several buffer grooves are drawn on the barrier layer and filled with a stress buffer layer; the p1 non-power generation area and the p3 non-power generation area are both filled with insulating material, and the p2 is filled with conductive material.
[0019] This invention relates to a double-glass colored photovoltaic module, which solves the problems of excessive weight, ion diffusion, and significant differences in the thermal expansion coefficients between the photoelectric layer and the colored coating layer in existing photovoltaic modules. It offers the following advantages: 1. The total weight of the components of this utility model can be reduced by more than 25%, and the requirements for transportation, hoisting and roof load are reduced accordingly, making it especially suitable for light steel roofs and industrial and commercial color steel tiles.
[0020] 2. The components of this utility model have lower cost, thinner thickness, smaller bending radius, shorter optical path, and improved light transmission and power generation efficiency. Reliability is increased rather than decreased, reducing the risk of delamination. The film layer wraps the core layer in a U-shape, which is equivalent to double glass, and the probability of microcracks is reduced simultaneously. Attached Figure Description
[0021] Figure 1 This is a schematic diagram of the structure of the double-glass colored photovoltaic module of this utility model. Figure 1 .
[0022] Figure 2 This is a schematic diagram of the structure of the double-glass colored photovoltaic module of this utility model. Figure 2 .
[0023] Figure 3 This is a schematic diagram of the photoelectric layer of the double-glass color photovoltaic module of this utility model.
[0024] Figure 4 This is a schematic diagram of the structure of the double-glass colored photovoltaic module of this utility model. Figure 3 .
[0025] Notes: 1. Backplate; 2. Core structure layer; 20. Back electrode; 21. Photoelectric conversion layer; 211. p1 non-power generation area; 212. p2 non-power generation area; 213. p3 non-power generation area; 22. Transparent electrode layer; 23. Substrate layer; 24. Stress buffer layer; 3. Barrier layer; 4. Color enamel layer; 5. Front plate; 6. Film layer. Detailed Implementation
[0026] The technical solutions in the embodiments of this utility model will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.
[0027] A double-glass colored photovoltaic module, reference Figures 1-4 The component includes: The module comprises a backplate 1, a core structure layer 2, a film layer 6, a back electrode 20, a photoelectric conversion layer 21, a p1 non-power generation area 211, a p2 non-power generation area 212, a p3 non-power generation area 213, a transparent electrode layer 22, a substrate layer 23, a stress buffer layer 24, a barrier layer 3, a colored enamel layer 4, and a front panel 5. The backplate 1 is located at the bottom of the entire module and is tightly bonded to the film layer 6, providing moisture protection, insulation, and weather resistance on the back side of the module.
[0028] The core structural layer 2 is located between the backplate 1 and the barrier layer 3, with its upper surface tightly bonded to the barrier layer 3. From bottom to top, it comprises a photoelectric layer, a substrate layer 23, and a stress buffer layer 24. The film layer 6 has a U-shaped vertical cross-section, wrapping the bottom and sidewalls of the core structural layer 2: its lower bottom surface is tightly bonded to the backplate 1, its inner bottom surface is tightly bonded to the lower bottom surface of the photoelectric layer, and its inner sidewalls, from bottom to top, are tightly bonded to the sidewalls of the photoelectric layer, substrate layer 23, and stress buffer layer 24. The sidewalls of the photoelectric layer, substrate layer 23, and stress buffer layer 24 are aligned, and the film layer 6 securely encapsulates the photoelectric layer, substrate layer 23, and stress buffer layer 24 through hot pressing or lamination processes, providing cushioning, moisture protection, and insulation. The upper edge of the film layer 6 is flush with the upper surface of the stress buffer layer 24 and is tightly bonded to the barrier layer 3.
[0029] The photoelectric layer is the core component of core structure layer 2, and from bottom to top, it includes a back electrode 20, a photoelectric conversion layer 21, and a transparent electrode layer 22. The back electrode 20 is located between the photoelectric conversion layer 21 and the film layer 6. Its upper surface is in direct electrical contact with the photoelectric conversion layer 21, and its lower surface is bonded to the inner bottom surface of the film layer 6. As a rear electrode, it collects photogenerated carriers, forming a closed current loop with the transparent electrode layer 22. Simultaneously, it reflects unabsorbed photons back to the photoelectric conversion layer 21, improving light utilization. The photoelectric conversion layer 21 is located between the transparent electrode layer 22 and the back electrode 20. Its upper surface is in close contact with the lower surface of the transparent electrode layer 22, and its lower surface is in close contact with the back electrode 20. It absorbs photons to generate electron-hole pairs, completing the photoelectric conversion, and is the core of the entire module's power generation. The transparent electrode layer 22 is located between the barrier layer 3 and the photoelectric conversion layer 21. Its upper surface is attached to the substrate layer 23 and its lower surface is attached to the photoelectric conversion layer 21. As a front electrode, it collects another type of charge carrier while maintaining high light transmittance, thereby achieving effective extraction of photogenerated current.
[0030] The p1 non-power-generating region 211 is uniformly disposed throughout the photoelectric conversion layer 21 and the transparent electrode layer 22, forming a high-resistance isolation band to block lateral leakage current and prevent crosstalk between adjacent photovoltaic cells. The p3 non-power-generating region 213 is uniformly disposed throughout the back electrode 20 and the photoelectric conversion layer 21, forming a high-resistance isolation band to block lateral leakage current on the back electrode side and avoid electrical short circuits between power-generating regions; at the same time, it ensures that the current must be transmitted longitudinally through the p2 non-power-generating region 212, thereby maintaining a unidirectional and efficient photogenerated carrier collection path. The p2 non-power-generating region 212 is uniformly disposed throughout the photoelectric conversion layer 21 and is the only active region in the module with complete photoelectric conversion function. It absorbs photons and generates electron-hole pairs, separates carriers through a built-in electric field, drives electrons to migrate to the transparent electrode layer 22 and holes to migrate to the back electrode 20, thereby forming and outputting photogenerated current; at the same time, the p2 non-power-generating region 212 is located between the p1 non-power-generating region 211 and the p3 non-power-generating region 213 and is used to fill conductive material to transmit electrical signals. Adjacent non-power-generating regions p1 211, p2 212, and p3 213 constitute a photovoltaic sub-cell. The non-power-generating region refers to the area from p1 211 to p3 213 within a photovoltaic sub-cell. The power-generating region refers to the area between adjacent non-power-generating regions p3 213 of the preceding photovoltaic sub-cell and p1 211 of the following photovoltaic sub-cell. The current direction is as follows... Figure 2 As shown by the dashed arrows in the diagram: Starting from the back electrode 20 of the adjacent, previous photovoltaic cell, passing through the p2 non-power generation region 212 in the photoelectric conversion layer 21 to the transparent electrode layer 22, and then returning to the back electrode 20 of the adjacent, next photovoltaic cell through the power generation region between the adjacent previous photovoltaic cell and the adjacent next photovoltaic cell, and so on in a continuous cycle.
[0031] The substrate layer 23 is located between the stress buffer layer 24 and the transparent electrode layer 22. Its upper surface is in close contact with the stress buffer layer 24, and its lower surface is in close contact with the transparent electrode layer 22, providing additional mechanical strength or flexible support.
[0032] The stress buffer layer 24 is located between the barrier layer 3 and the substrate layer 23. Its upper surface is in close contact with the barrier layer 3 and its lower surface is in close contact with the substrate layer 23. It is used to relieve interlayer stress caused by thermal expansion and contraction or mechanical impact, prevent cracking and peeling, and improve the reliability and life of the component.
[0033] The barrier layer 3 is located between the colored glaze layer 4 and the transparent electrode layer 22. Its upper surface is closely attached to the colored glaze layer 4, and its lower surface is closely attached to the stress buffer layer 24. Its function is to block water, oxygen and ions, prevent metal ions in the colored glaze layer 4 from being released to the photoelectric layer at high temperature, which would cause the color of the colored glaze layer 4 to change and affect the working efficiency of the photoelectric layer. It also prevents the photoelectric layer from being corroded by the external environment, thereby extending the service life of the component.
[0034] The colored glaze layer 4 is located between the front plate 5 and the barrier layer 3. Its upper surface is tightly attached to the front plate 5, and its lower surface is tightly attached to the barrier layer 3. It forms colored or patterned decorations through printing or sintering to achieve an aesthetically pleasing appearance.
[0035] The front panel 5 is located on the top layer of the entire component. Its lower surface is closely attached to the upper surface of the colored glaze layer 4. As the light-facing surface, it provides mechanical protection, high light transmittance, weather resistance, dust and water resistance. It is usually made of tempered glass or high weather-resistant transparent polymer sheet.
[0036] According to a specific embodiment of this utility model, the upper surface of the stress buffer layer 24 is uniformly provided with protrusions, which are embedded in the corresponding grooves on the lower surface of the barrier layer 3, further enhancing the stress release effect. The position of the protrusions in the stress buffer layer 24 corresponds to the non-power-generating area of a photovoltaic sub-cell, and the width of the protrusions is the same as the width of the non-power-generating area of a photovoltaic sub-cell, ensuring that stress is concentrated in the non-power-generating area and avoiding adverse effects on the power-generating area.
[0037] According to a specific embodiment of the present invention, the non-power generation region 211 of p1 extends into the interior of the substrate layer 23 but does not penetrate the substrate layer 23, thereby improving the adhesion between the substrate layer 23 and the transparent electrode layer 22. At the same time, a local high-resistance region is formed in the substrate layer 23, blocking the lateral leakage current and carrier diffusion in this region, further avoiding electrical crosstalk between adjacent photovoltaic cells, enhancing local mechanical strength and reducing stress concentration, thereby improving the efficiency and reliability of the module.
[0038] According to a specific embodiment of this utility model, the colored enamel layer 4 is embedded in the barrier layer 3 in segments, without penetrating the barrier layer 3, and the upper surfaces of the colored enamel layer 4 and the barrier layer 3 are flush. The two ends of each segment of the colored enamel layer 4 are aligned with the non-power-generating areas of two adjacent photovoltaic sub-cells (the front segment of the previous non-power-generating area and the rear segment of the next non-power-generating area), respectively. There is a power-generating area (between two adjacent photovoltaic sub-cells) between two adjacent segments of the colored enamel layer 4 where no colored enamel layer 4 is placed, thereby reducing shading and improving power generation efficiency; this interval area is filled by the barrier layer 3, which also has an anti-reflection effect, further improving light transmittance and power generation efficiency.
[0039] According to a specific embodiment of the present invention, the edges of the photoelectric layer to the colored glaze layer 4 (including the photoelectric layer, substrate layer 23, stress buffer layer 24, barrier layer 3, and colored glaze layer 4) are all aligned, the film layer 6 is directly bonded to the front plate 5, and the edges of the photoelectric layer to the colored glaze layer 4 are sealed to improve the fixing effect.
[0040] According to a specific embodiment of this utility model, the barrier layer 3 is made of silicon nitride (Si3N4) with a thickness of 20~100nm; if it is too thin (<20nm), the film coverage is insufficient and the ion blocking fails; if it is too thick (>100nm), the optical path increases and the light transmission is affected; the stress buffer layer 24 is made of anatase TiO2 with a thickness of 50~100nm; if it is too thin, the stress buffer is insufficient, and if it is too thick, the optical path increases and the light transmission is affected, and the heat dissipation is reduced, which affects the heat dissipation of the photovoltaic cell; the substrate layer 23 is made of silicon dioxide (SiO2) with a thickness of 200~500nm; if it is too thin, it is easily deformed by the stress buffer layer, which leads to damage to the photoelectric layer; if it is too thick, the thermal conductivity decreases and the optical path increases.
[0041] According to a specific embodiment of the present invention, the coating process of the component is as follows: a colored glaze layer 4 is coated on the lower surface of the front plate 5; a barrier layer 3 is coated on the colored glaze layer 4; a stress buffer layer 24 is coated on the barrier layer 3; a substrate layer 23 is coated on the stress buffer layer 24; a transparent electrode layer 22 is coated on the substrate layer 23; a photoelectric conversion layer 21 is coated on the transparent electrode layer 22, and a p1 groove and a p2 groove are laser-etched; a back electrode layer 20 is coated on the photoelectric conversion layer 21, and a p3 groove is laser-etched.
[0042] According to a specific embodiment of this utility model, several stress buffer grooves are laser-etched on the barrier layer 3, and the stress buffer grooves are filled with the stress buffer layer 24. After p1 and p3 are etched, the insulating layer is filled, and p2 is filled with the conductive layer (which can be filled by the back electrode layer).
[0043] According to a specific embodiment of this utility model, the lamination processes of the front panel 5, the film layer 6 and the back panel 1, and the busbar pasting are the same as those in the prior art.
[0044] Comparative Example 1 The components were fabricated based on the Chinese patent application with publication number CN113421932B.
[0045] Compared with the component of Comparative Example 1, the component of this invention reduces one layer of glass by 2mm to 3mm, and the areal density is reduced by 5–7kg / m³. 2 The total weight of the components can be reduced by more than 25%, and the requirements for transportation, hoisting, and roof load are reduced accordingly, making it particularly suitable for light steel roofs and industrial and commercial color steel tiles. This invention also reduces energy consumption in terms of glass materials, encapsulating film, and lamination, resulting in lower costs. Compared to using only glass materials, it can save 15 yuan / m². 2 ~18 yuan / m 2Compared to using only glass, this method reduces material usage by 10%~15%. The new module is thinner and has a smaller bending radius, with the total thickness reduced from 6.5mm~7.0mm to 3.5mm~4.0mm and the bending radius reduced from approximately 400mm to approximately 200mm, meeting the requirements of irregularly shaped BIPV applications such as curved surfaces, rooftops, and more, thus increasing design freedom. The new module also shortens the optical path, resulting in increased light transmission and power generation efficiency. Each reduction in the number of glass-air interfaces lowers optical reflection loss by approximately 2%. Combined with the color enamel layer for partitioned anti-reflection, the module's front light transmittance increases by 1.5%~2.0%, corresponding to a power gain of 3W / m². 2 ~5W / m 2 This invention improves reliability rather than reduces it by eliminating one glass-adhesive interface layer, thus lowering the risk of delamination. The U-shaped film layer wraps around the core layer, maintaining a water vapor transmission rate of <0.1 g / (m²). 2 (day), equivalent to double glass, the probability of microcracks is reduced simultaneously.
[0046] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above content. Therefore, the scope of protection of the present invention should be defined by the appended claims.
Claims
1. A double-glass color photovoltaic module, characterized in that, This component includes: The back panel (1) is located at the bottom of the component, and its upper surface is closely attached to the outer bottom surface of the film layer (6); The core structure layer (2) is located between the film layer (6) and the barrier layer (3). Its lower surface is closely attached to the inner bottom surface of the film layer (6). From bottom to top, it includes a photoelectric layer, a substrate layer (23) and a stress buffer layer (24). The photoelectric layer is the core part of the core structure layer (2), which includes a back electrode (20), a photoelectric conversion layer (21) and a transparent electrode layer (22) from bottom to top. The substrate layer (23) is located between the stress buffer layer (24) and the transparent electrode layer (22), and its lower surface is in close contact with the upper surface of the transparent electrode layer (22). The stress buffer layer (24) is located between the barrier layer (3) and the substrate layer (23), and its lower surface is in close contact with the upper surface of the substrate layer (23). The barrier layer (3) is located between the colored glaze layer (4) and the stress buffer layer (24), and its lower surface is in close contact with the upper surface of the stress buffer layer (24). The colored glaze layer (4) is located between the front plate (5) and the barrier layer (3), and its lower surface is in close contact with the barrier layer (3); The front panel (5) is located on the top layer of the component, and its lower surface is in close contact with the upper surface of the colored glaze layer (4).
2. The double-glass color photovoltaic module according to claim 1, characterized in that, The film layer (6) has a U-shaped vertical cross section and wraps the bottom and sidewalls of the core structure layer (2); the upper edge of the film layer (6) is flush with the upper surface of the stress buffer layer (24) and is tightly bonded to the barrier layer (3). The back electrode (20) is located between the photoelectric conversion layer (21) and the film layer (6). Its lower surface is tightly bonded to the inner bottom surface of the film layer (6). As a back electrode, it collects photogenerated carriers and forms a closed current loop with the transparent electrode layer (22). At the same time, it reflects unabsorbed photons back to the photoelectric conversion layer (21) to improve light utilization. The photoelectric conversion layer (21) is located between the transparent electrode layer (22) and the back electrode (20), and its lower surface is in close contact with the upper surface of the back electrode (20). The p2 non-power generation region (212) is uniformly disposed in the photoelectric conversion layer (21), located between the p1 non-power generation region (211) and the p3 non-power generation region (213), and is filled with conductive material to transmit electrical signals; The p3 non-power generation region (213) is uniformly disposed in the back electrode (20) and the photoelectric conversion layer (21), blocking the lateral leakage current on the back electrode side and ensuring that the current must be transmitted longitudinally through the p2 non-power generation region (212). The transparent electrode layer (22) is located between the substrate layer (23) and the photoelectric conversion layer (21), and its lower surface is closely attached to the upper surface of the photoelectric conversion layer (21) to achieve effective output of photogenerated current; The non-power generation region (211) of p1 is uniformly disposed in the photoelectric conversion layer (21) and the transparent electrode layer (22) to block the lateral leakage current and prevent crosstalk between adjacent photovoltaic sub-cells. The non-power generation area refers to the area between the p1 non-power generation area (211) and the p3 non-power generation area (213) in a photovoltaic sub-cell; The power generation area is the region between the adjacent non-power generation area (213) of the previous photovoltaic cell and the non-power generation area (211) of the next photovoltaic cell.
3. The double-glass color photovoltaic module according to claim 1, characterized in that, The stress buffer layer (24) has uniformly arranged grooves on its upper surface, which are embedded in the corresponding grooves on the lower surface of the barrier layer (3) to enhance the stress release effect.
4. The double-glass color photovoltaic module according to claim 3, characterized in that, The position of the groove in the stress buffer layer (24) corresponds to the non-power generation area of a photovoltaic sub-cell, and the width of the groove is the same as the width of the non-power generation area of a photovoltaic sub-cell, so as to ensure that the stress is concentrated in the non-power generation area and avoid adverse effects on the power generation area.
5. The double-glass color photovoltaic module according to claim 1, characterized in that, The sidewalls of the photoelectric layer, substrate layer (23) and stress buffer layer (24) are aligned and cleaned. The film layer (6) is used to firmly encapsulate the photoelectric layer, substrate layer (23) and stress buffer layer (24) through hot pressing or lamination process, while providing buffer, moisture protection and insulation protection.
6. The double-glass color photovoltaic module according to claim 1, characterized in that, The bottom surface of the film layer (6) is tightly bonded to the back plate (1), its inner bottom surface is tightly bonded to the bottom surface of the photoelectric layer, and its inner sidewalls are tightly bonded to the sidewalls of the photoelectric layer, the substrate layer (23) and the stress buffer layer (24) from bottom to top.
7. The double-glass color photovoltaic module according to claim 2, characterized in that, The non-power generation region (211) of p1 extends into the interior of the substrate layer (23) without penetrating the substrate layer (23), thereby improving the adhesion between the substrate layer (23) and the transparent electrode layer (22) and forming a local high-resistance barrier region within the substrate layer 23, thereby blocking the lateral leakage current and carrier diffusion in that region.
8. The double-glass color photovoltaic module according to claim 1, characterized in that, The colored glaze layer (4) is embedded into the barrier layer (3) in segments, without penetrating the barrier layer (3), and the upper surfaces of the colored glaze layer (4) and the barrier layer (3) are flush.
9. The double-glass color photovoltaic module according to claim 8, characterized in that, Each segment of the colored glaze layer (4) is aligned with the non-power generation area of two adjacent photovoltaic sub-cells. The interval between two adjacent segments of the colored glaze layer (4) corresponds to the power generation area between two adjacent photovoltaic sub-cells, and this interval fills the blocking layer (3) to reduce shading, reduce reflection effect, and improve light transmittance and power generation efficiency.
10. The double-glass color photovoltaic module according to claim 2, characterized in that, The edges of the photoelectric layer to the colored glaze layer (4) are cleaned and aligned. The film layer (6) is directly bonded to the front plate (5), and the edges of the photoelectric layer to the colored glaze layer (4) are sealed to improve the fixing effect. The barrier layer (3) is made of silicon nitride and has a thickness of 20~100nm; the stress buffer layer (24) is made of TiO2 and has a thickness of 50~100nm; the substrate layer (23) is made of silicon dioxide and has a thickness of 200~500nm. Several buffer grooves are drawn on the barrier layer (3) and filled with stress buffer layer (24); the non-power generation area (211) of p1 and the non-power generation area (213) of p3 are filled with insulating material, and the p2 is filled with conductive material.
Citation Information
Patent Citations
A colored photovoltaic module and its preparation method
CN113421932B