Battery processing system

Abstract

The application provides a battery processing system for preparing a perovskite solar cell, the perovskite solar cell comprising a substrate, a first transport layer, a perovskite layer, a second transport layer and an electrode layer, the battery processing system comprising: a first transport layer device for preparing the first transport layer; a perovskite layer device arranged on one side of the first transport layer device and used for preparing the perovskite layer on the first transport layer; a second transport layer device arranged on one side of the perovskite layer device away from the first transport layer device and used for preparing the second transport layer on the perovskite layer; and an electrode layer device arranged on one side of the second transport layer device away from the perovskite layer device and used for preparing the electrode layer on the second transport layer; wherein the perovskite layer device comprises a roller coating device and a perovskite layer device group, the roller coating device is used for roller coating a perovskite solution on the substrate, the roller coating device is located between the perovskite layer device group and the first transport layer device, and is used for coating the perovskite solution on the first transport layer.

Description

Technical Field

[0001] This application relates to the technical field of photovoltaic and semiconductor product processing, and in particular to a battery processing system. Background Technology

[0002] Currently, in the fabrication of heterojunction (HJT) perovskite tandem solar cells, a slot coating method is commonly used to coat the perovskite solution onto the cell substrate. During slot coating, the coating equipment needs to precisely control the extruded solution volume to prevent the perovskite layer thickness from exceeding the upper limit. Therefore, the coating equipment needs to reduce the extrusion rate to precisely control the solution extrusion and avoid excessive extrusion, which would reduce the efficiency of coating the perovskite solution onto the cell substrate and affect the cell's processing efficiency. Utility Model Content

[0003] In view of the above, it is necessary to provide a battery processing system to overcome the aforementioned deficiencies.

[0004] This application provides a battery processing system for fabricating perovskite solar cells. The perovskite solar cell includes a substrate, a first transport layer, a perovskite layer, a second transport layer, and an electrode layer. The battery processing system includes: a first transport layer device for fabricating the first transport layer; a perovskite layer device disposed on one side of the first transport layer device and used to fabricate the perovskite layer on the first transport layer; a second transport layer device disposed on the side of the perovskite layer device opposite to the first transport layer device and used to fabricate the second transport layer on the perovskite layer; and an electrode layer device disposed on the side of the second transport layer device opposite to the perovskite layer device and used to fabricate the electrode layer on the second transport layer. The perovskite layer device includes a roll coating device and a group of perovskite layer devices. The roll coating device is used to roll-coat a perovskite solution onto the substrate. The roll coating device is located between the group of perovskite layer devices and the first transport layer device and is used to coat the perovskite solution onto the first transport layer. The first transport layer and the second transport layer are respectively a hole layer and an electron transport layer, or the first transport layer and the second transport layer are respectively an electron transport layer and a hole layer.

[0005] Optionally, the perovskite solar cell further includes a conductive layer, and the cell processing system further includes a conductive layer device disposed on the other side of the first transport layer device and used to prepare the conductive layer on the substrate.

[0006] Optionally, the perovskite layer apparatus group includes: a flash evaporation device, disposed on the side of the roll coating device away from the first transfer layer device, and used to flash process the substrate after the perovskite solution coating is completed, so that crystals are formed on the substrate; and a perovskite layer annealing device, disposed on the side of the flash evaporation device away from the roll coating device, and used to anneal the substrate after the flash evaporation process, thereby completing the preparation of the perovskite layer.

[0007] Optionally, the first or second transport layer device is an electronic transport layer device, which includes a transport layer evaporation device disposed on one side of the perovskite layer device group. The transport layer evaporation device is used to perform evaporation processing on the substrate to complete the preparation of the electronic transport layer.

[0008] Optionally, the perovskite solar cell further includes a passivation layer disposed on the perovskite layer. The cell processing system further includes a passivation layer device, which includes a passivation layer evaporation device disposed on one side of the perovskite layer device group. The passivation layer evaporation device is used to perform evaporation processing on the substrate to prepare a passivation layer on the perovskite layer.

[0009] Optionally, the perovskite solar cell further includes a buffer layer disposed between the second transport layer and the electrode layer. The cell processing system further includes a buffer layer device. The buffer layer includes a seed layer and a thick film layer, with the thick film layer covering the seed layer. The electron transport layer device includes: a first deposition device disposed on one side of the electron transport device and used to perform atomic layer deposition on the substrate to prepare the seed layer on the second transport layer; and a second deposition device disposed on the side of the first deposition device opposite to the second transport layer device and used to perform physical vapor deposition on the substrate to prepare the thick film layer on the seed layer.

[0010] Optionally, the first transport layer device or the second transport layer device is a hole layer device, which includes: a coating device disposed on one side of the perovskite layer device and used to coat the substrate with a hole layer solution; a hole layer annealing device disposed on one side of the coating device and used to anneal the substrate coated with the hole layer solution to form a film of the hole layer solution, thereby completing the preparation of the hole layer; and a cleaning device disposed on the side of the hole layer annealing device away from the coating device and used to clean the substrate after the hole layer preparation is completed.

[0011] Optionally, the cavity layer equipment further includes: a first flipping device, disposed on the side of the coating device away from the cavity layer annealing device, and used to flip the substrate so that the coating device coats the flipped substrate with a cavity layer solution; and a second flipping device, disposed between the coating device and the cavity layer annealing device, and used to flip the substrate coated with the cavity layer solution again so that the cavity layer annealing device anneals the substrate that has been flipped again and coated with the cavity layer solution.

[0012] Optionally, the perovskite layer equipment further includes: a third flipping device, disposed on the side of the roller coating device away from the perovskite layer device group, and used to flip the completed substrate so that the roller coating device coats the flipped substrate with a perovskite solution; and a fourth flipping device, disposed between the roller coating device and the perovskite layer device group, and used to flip the substrate coated with the perovskite solution again so that the perovskite layer device group processes the substrate that has been flipped again and coated with the perovskite solution.

[0013] Optionally, the electrode layer equipment includes an electrode layer deposition apparatus disposed on the side of the perovskite layer apparatus group away from the roll coating apparatus, and is used to perform physical vapor deposition processing on the substrate to achieve the preparation of the electrode layer.

[0014] The battery processing system provided in this application allows for the application of a roll coating device to coat a perovskite solution onto a substrate during the fabrication of the perovskite layer for a perovskite solar cell. The perovskite layer processing device then further processes the substrate. The roll coating device improves the efficiency of perovskite solution coating, thereby enhancing the processing efficiency of the battery processing system for perovskite solar cells. Attached Figure Description

[0015] Figure 1 This is a first partial schematic diagram of the battery processing system in an embodiment of this application.

[0016] Figure 2 This is a second partial schematic diagram of the battery processing system in an embodiment of this application.

[0017] Figure 3 This is a schematic diagram of a perovskite solar cell in an embodiment of this application.

[0018] Explanation of key component symbols: 100. Battery processing system; 10. Perovskite solar cell; 11. Substrate; 12. First transport layer; 13. Perovskite layer; 14. Second transport layer; 15. Electrode layer; 16. Conductive layer; 17. Passivation layer; 18. Buffer layer; 20. Conductive layer equipment; 21. Conductive layer deposition apparatus; 30. First transport layer equipment; 30A. Hole layer equipment; 31. First flipping device; 32. Scraping device; 33. Second flipping device; 34. Hole layer annealing apparatus; 35. Cleaning device; 40. Perovskite Ore layer equipment; 41. Third turning device; 42. Roller coating device; 43. Fourth turning device; 44. Perovskite layer equipment group; 441. Flash evaporation device; 442. Perovskite layer annealing device; 50. Second transport layer equipment; 50A. Electron transport layer equipment; 51. Transport layer evaporation device; 60. Electrode layer equipment; 61. Electrode layer deposition device; 70. Transport device; 80. Passivation layer equipment; 81. Passivation layer evaporation device; 90. Buffer layer equipment; 91. First deposition device; 92. Second deposition device. Detailed Implementation

[0019] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments.

[0020] The term "multiple" in this application refers to two or more. Furthermore, it should be understood that the terms "first," "second," etc., used in the description of this application are used only for descriptive purposes and should not be construed as indicating or implying relative importance, nor as indicating or implying order.

[0021] In the description of the embodiments in this application, the words "exemplary" or "for example" are used to indicate that they are examples, illustrations, or descriptions. Any embodiment or design that is described as "exemplary" or "for example" in the embodiments of this application should not be construed as being more preferred or advantageous than other embodiments or design options. Specifically, the use of the words "exemplary" or "for example" is intended to present the relevant concepts in a specific manner.

[0022] Please see Figure 1 and Figure 2 , Figure 1 and Figure 2 A battery processing system 100 provided in an embodiment of this application is shown.

[0023] It is understood that the battery processing system 100 is used to fabricate perovskite solar cells 10. These perovskite solar cells include single-junction perovskite cells and tandem perovskite cells. Single-junction perovskite cells are the basis for all perovskite solar cell forms 10, while tandem perovskite cells are formed by stacking other solar cell product forms on top of single-junction perovskite cells.

[0024] For example, the perovskite solar cell 10 can be a heterojunction technology (HJT) perovskite tandem cell or a tunnel oxide passivated contact solar cell (TOPCon) perovskite tandem cell.

[0025] Please refer to the following: Figure 3 , Figure 3 A perovskite solar cell 10 according to an embodiment of this application is shown.

[0026] In embodiments of this application, the perovskite solar cell 10 may include a substrate 11, a first transport layer 12, a perovskite layer 13, a second transport layer 14, and an electrode layer 15 stacked from bottom to top. If the perovskite solar cell is a tandem perovskite solar cell, the perovskite solar cell 10 may include a substrate 11, a conductive layer 12, a first transport layer 12, a perovskite layer 13, a second transport layer 14, and an electrode layer 15 stacked from bottom to top. The first transport layer 12 and the second transport layer 13 may be a hole layer and an electron transport layer, respectively, or the first transport layer 12 and the second transport layer 13 may be an electron transport layer and a hole layer, respectively. It can be understood that the perovskite solar cell 10 includes a substrate 11, an electron transport layer, a perovskite layer 13, a hole layer, and an electrode layer 15 stacked from bottom to top, or the perovskite solar cell 10 includes a substrate 11, a hole layer, a perovskite layer 13, an electron transport layer, and an electrode layer 15 stacked from bottom to top.

[0027] In one case, if the perovskite solar cell 10 is a single-junction perovskite cell, then indium tin oxide (ITO) or fluorine-doped tin oxide (FTO) conductive glass is used as the substrate 11, and a first transport layer 12 can be deposited on the substrate 11 when fabricating the perovskite solar cell 10.

[0028] In another case, if the perovskite solar cell 10 is a tandem perovskite solar cell, then a pre-processed base cell is used as the base 11. The base cell can be a TOPCON cell or an HJT cell. When preparing the perovskite solar cell 10, a conductive layer 16 can be deposited on the base cell. In this case, the perovskite solar cell 10 can include a base 11, a conductive layer 16, a first transport layer 12, a perovskite layer 13, a second transport layer 14, and an electrode layer 15 stacked from bottom to top.

[0029] It is understandable that both HJT perovskite tandem solar cells and HJT substrate solar cells are common types of cells in their respective fields, and their working principles and materials are common information in these fields, so they will not be elaborated here.

[0030] The following embodiments can be illustrated by the case where the perovskite solar cell 10 is a tandem perovskite cell, that is, a conductive layer 16 is provided between the substrate 11 and the first transport layer 12.

[0031] In one embodiment, the battery processing system 100 may include a conductive layer device 20, a first transport layer device 30, a perovskite layer device 40, a second transport layer device 50, and an electrode layer device 60 arranged sequentially along the processing direction.

[0032] When the substrate 11 enters the conductive layer device 20, the conductive layer device 20 can fabricate a conductive layer 12 on the substrate 11. Then, the substrate 11 can enter the first transport layer device 30, where the first transport layer device 30 can fabricate a first transport layer 12 on the conductive layer 12. Then, the substrate 11 can enter the perovskite layer device 40, where the perovskite layer device 40 can fabricate a perovskite layer 13 on the first transport layer 12. Then, the substrate 11 can enter the second transport layer device 50, where the second transport layer device 50 can fabricate a second transport layer 14 on the perovskite layer 13. Then, the substrate 11 can enter the electrode layer device 60, where the electrode layer device 60 can fabricate an electrode layer 15 on the second transport layer 14, thereby obtaining a perovskite solar cell 10 with the substrate 11, conductive layer 16, first transport layer 12, perovskite layer 13, second transport layer 14, and electrode layer 15 arranged sequentially from bottom to top, thus completing the processing of the perovskite solar cell 10.

[0033] It is understood that a transmission device 70 can be set between any two adjacent devices in the battery processing system 100. The transmission device 70 between devices can transmit the substrate 11 along the processing direction, so that the substrate 11 that has completed the preparation of one layer can be transmitted to the next device for the preparation of another layer.

[0034] Each device in the battery processing system 100 may be equipped with a transfer device 70, which can transfer the substrate 11 along the processing direction, so that the substrate 11 can complete the corresponding processing while moving along the processing direction, and the substrate 11 that has completed the preparation of one layer can enter another device to prepare another layer.

[0035] For example, the processing direction can be Figure 1 The X direction is shown. The battery processing system 100 and its components may have a front end and a rear end positioned opposite each other in the processing direction, with the front end being... Figure 1 The end of the X-shaped arrow that is facing away from the other end is the rear end. Figure 1 The end that the X arrow is pointing towards.

[0036] In the embodiments of this application, the type of the transmission device 70 is not specifically limited. For example, the transmission device 70 may be a device composed of multiple conveying rollers spaced apart along the processing direction. The conveying rollers may carry a carrier plate, and the substrate 11 may be carried on the carrier plate. The transmission device 70 realizes the transmission of the substrate 11 while transmitting the carrier plate.

[0037] In some embodiments, the conductive layer device 20 may include a conductive layer deposition apparatus 21, which may perform a physical vapor deposition (PVD) process.

[0038] The conductive layer deposition apparatus 21 may include a transport mechanism (not shown) that can transport the substrate 11 along the processing direction. When the substrate 11 enters the conductive layer deposition apparatus 21, the conductive layer device 20 can perform PVD processing on the substrate 11 to prepare a conductive layer 12 on the substrate 11. The substrate 11, after the conductive layer 12 has been prepared, can be removed from the conductive layer deposition apparatus 21 and transported toward the first transport layer 12 device.

[0039] It is understandable that the principle of forming a layer structure on a component through PVD coating is a common principle in related fields, and will not be elaborated here.

[0040] In the embodiments of this application, the type of conductive layer 12 is not specifically limited. For example, conductive layer 12 may be, but is not limited to, a transparent conductive oxide (TCO) conductive layer.

[0041] In some embodiments, the conductive layer apparatus 20 may further include transfer devices 70 located at the front and rear ends of the conductive layer deposition apparatus 21, respectively, and capable of loading and unloading the substrate 11. The loading transfer device 70 can move the substrate 11 from the front end of the conductive layer deposition apparatus 21 into the conductive layer deposition apparatus 21, and the unloading transfer device 70 can transfer the substrate 11 after the conductive layer 12 has been prepared from the rear end of the conductive layer deposition apparatus 21 to the first transfer layer apparatus 30.

[0042] In the embodiments of this application, when the perovskite solar cell 10 is a single-junction perovskite cell, the cell processing system 100 does not need to prepare the conductive layer 16 on the substrate 11. At this time, the cell processing system 100 may not include the conductive layer device 20, and the substrate 11 can directly enter the first transport layer device 30 to prepare the first transport layer 12.

[0043] The following embodiments can be illustrated by the case where the first transport layer 12 is a hole layer and the second transport layer 14 is an electron transport layer.

[0044] In some embodiments, the first transport layer 12 is a hole layer, and the first transport layer device 30 is a hole layer device 30A. The hole layer device 30A may include a first flipping device 31, a scraping device 32, a second flipping device 33, a hole layer annealing device 34, and a cleaning device 35.

[0045] The first flipping device 31 can be located between the coating device 32 and the conductive layer device 20. When the substrate 11 is transferred out of the conductive layer device 20, the conductive layer 12 is located on top of the substrate 11. The first flipping device 31 can flip the substrate 11 removed from the conductive layer device 20 so that the conductive layer 12 is located at the bottom. Then, the substrate 11 can be transferred to the coating device 32, which can coat the conductive layer 12 located at the bottom of the substrate 11 with a hole layer solution. Then, the substrate 11 can be transferred to the second flipping device 33, which can flip the substrate 11 coated with the hole layer solution so that the hole layer solution is located on top of the substrate 11.

[0046] Then, the substrate 11 can be transferred to the cavity layer annealing apparatus 34 for annealing. After annealing, the cavity layer solution can be dried and solidified into a layer, thereby forming a cavity layer, i.e., forming the first transport layer 12. The substrate 11 with the first transport layer 12 prepared can be transferred out of the cavity layer annealing apparatus and transferred to the cleaning apparatus 35. The cleaning apparatus 35 can clean the surfaces of the substrate 11 and the first transport layer 12 by blowing air onto the substrate 11.

[0047] It is understood that the first flipping device 31 may include a gripper (not shown) for gripping the substrate 11 and a flipping drive (not shown) for driving the fixture to rotate. The axial direction of the rotation center axis of the substrate 11 during flipping may coincide with the processing direction. The gripper may acquire the substrate 11 through principles such as negative pressure adsorption; the flipping drive may be a device such as a motor, which drives the gripper to rotate, thereby flipping the substrate 11.

[0048] The structure and working principle of the second flipping device 33 are the same as or similar to those of the first flipping device 31, and will not be described again here.

[0049] It is understood that the type of hole layer solution can determine the material of the hole layer. In the embodiments of this application, the type of hole layer solution is not specifically limited. For example, the hole layer solution can be, but is not limited to, PEDOT:PSS solution or PTAA solution.

[0050] It is understood that the coating device 32 can coat the cavity layer solution onto the substrate 11 through the coating process. The coating process can be a common process in the relevant field, and will not be described in detail here.

[0051] It is understandable that when the hole layer annealing apparatus 34 is working, it can evaporate the solvent in the hole layer solution, promote the solute in the hole layer solution to densify and form a film on the conductive layer 12, and solidify to form a hole layer. The principle of the annealing process performed by the hole layer annealing apparatus 34 can be a general principle in related fields, and will not be elaborated here.

[0052] In the embodiments of this application, the type of gas blown out by the cleaning device 35 is not specifically limited. For example, the gas blown out by the cleaning device 35 can be, but is not limited to, nitrogen.

[0053] In some embodiments, the cavity layer device 30A may further include a transfer device 70 located between the second flipping device 33 and the cavity layer annealing device 34, a transfer device 70 located between the cavity layer annealing device 34 and the cleaning device 35, and a transfer device 70 corresponding to the cleaning device 35.

[0054] After the substrate 11 has completed the coating and flipping of the hole layer solution, i.e., when the hole layer solution is on top of the substrate 11, the substrate 11 can be transferred to the hole layer annealing apparatus 34 via the transfer device 70 for annealing. The hole layer annealing apparatus 34 is equipped with a transfer mechanism (not shown in the figure), which can transfer the substrate 11 within the hole layer annealing apparatus 34 and remove the annealed substrate 11 from the rear end of the hole layer annealing apparatus 34. Then, the transfer device 70, which is correspondingly provided with the cleaning device 35, can transfer the substrate 11 to the perovskite layer device 40. During the transfer process, the cleaning device 35 can clean the substrate 11 on the transfer device 70.

[0055] In embodiments of this application, when the perovskite solar cell 10 is a single-junction perovskite cell, when the substrate 11 enters the first transport layer device 30, the first flipping device 31 can flip the substrate 11 so that the side intended for the fabrication of the first transport layer 12 is facing down; or, if the side intended for the fabrication of the first transport layer 12 is already facing down when the substrate 11 is transferred into the first transport layer device 30, the first flipping device 31 in the first transport layer device 30 can be omitted. In some embodiments, the perovskite layer device 40 may include a third flipping device 41, a roll coating device 42, a fourth flipping device 43, and a perovskite layer device group 44.

[0056] The third flipping device 41 can be located between the roll coating device 42 and the first transfer layer device 30. When the substrate 11 is transferred out of the first transfer layer device 30, the first transfer layer 12 is located on top of the substrate 11. The third flipping device 41 can flip the substrate 11 removed from the first transfer layer device 30 so that the first transfer layer 12 is located at the bottom. Then, the substrate 11 can be transferred to the roll coating device 42, which can roll coating the first transfer layer 12 at the bottom of the substrate 11 with a perovskite layer 13 solution. Then, the substrate 11 can be transferred to the fourth flipping device 43, which can flip the substrate 11 coated with the perovskite solution so that the perovskite solution is located on top of the substrate 11.

[0057] Then, the substrate 11 can be transferred to the perovskite layer device group 44 for processing to complete the preparation of the perovskite layer 13.

[0058] It is understood that the structure and working principle of the third flipping device 41 and the fourth flipping device 43 are the same as or similar to the structure and working principle of the first flipping device 31, and will not be described again here.

[0059] It is understood that the roller coating device 42 may include a coating roller (not shown in the figure). During the rotation process, the coating roller can come into contact with the perovskite solution and adsorb the perovskite solution on the outer periphery of the coating roller. The substrate 11 in the transmission process can move to the top of the coating roller, and the outer periphery of the coating roller can adhere to the surface of the first transmission layer 12 on the substrate 11, and coat the adsorbed perovskite solution on the surface of the first transmission layer 12, thereby realizing the roller coating of the perovskite solution on the substrate 11 and the first transmission layer 12.

[0060] Compared to the common method in related fields of using a slot coater to coat perovskite coating onto the substrate 11, this application uses a roll coating device 42 to roll-coat the perovskite solution onto the substrate 11. This allows for coating of the perovskite solution without reducing the transport speed of the substrate 11, thereby improving the efficiency of perovskite layer 13 preparation and the efficiency of perovskite solar cell 10 processing.

[0061] In some embodiments, the perovskite layer device group 44 may include a flash evaporation device 441 and a perovskite layer annealing device 442.

[0062] The flash evaporation device 441 can be located on the side of the fourth flipping device 43 away from the roller coating device 42. The substrate 11 coated with perovskite solution can be transferred to the flash evaporation device 441. The flash evaporation device 441 can flash process the substrate 11, causing the solvent in the perovskite solution on the substrate 11 to evaporate and form perovskite crystals. Then, the substrate 11 can be transferred to the perovskite layer annealing device 442 for annealing, so that the perovskite crystals can condense into perovskite layer 13, completing the preparation of perovskite layer 13.

[0063] It is understood that the flash evaporation device 441 processes the substrate 11 through a flash evaporation process. The flash evaporation process is a common process in the relevant field and will not be described in detail here.

[0064] Similarly, the perovskite layer annealing apparatus 442 processes the substrate 11 through an annealing process to complete the preparation of the perovskite layer 13. The annealing process is a common process in the relevant field and will not be described in detail here.

[0065] In some embodiments, the perovskite layer apparatus 40 may further include a transfer device 70 located between the fourth flipping device 43 and the flash evaporation device 441, a transfer device 70 located between the flash evaporation device 441 and the perovskite layer annealing device 442, and a transfer device 70 located at the rear end of the perovskite layer annealing device 442.

[0066] After the substrate 11 has completed the coating and flipping of the perovskite solution, i.e., when the perovskite solution on the substrate 11 is on top, the substrate 11 can be transferred to the flash evaporation device 441 by the transfer device 70 for flash evaporation processing. The flash evaporation device 441 is provided with a transfer mechanism (not shown in the figure), which can realize the transfer of the substrate 11 in the flash evaporation device 441 and remove the substrate 11 that has completed the flash evaporation processing from the rear end of the flash evaporation device 441.

[0067] After the substrate 11 completes the flash evaporation process, it can be transferred to the perovskite layer annealing apparatus 442 via the transfer device 70 for annealing. The perovskite layer annealing apparatus 442 is equipped with a transfer mechanism (not shown in the figure), which enables the transfer of the substrate 11 within the perovskite layer annealing apparatus 442 and removes the annealed substrate 11 from the rear end of the perovskite layer annealing apparatus 442. Then, the transfer device 70, located at the rear end of the perovskite layer annealing apparatus 442, can transfer the substrate to the second transfer layer device 50.

[0068] In some embodiments, the perovskite solar cell 10 may further include a passivation layer 17. The passivation layer 17 may be disposed on the surface of the perovskite layer 14, for example, the material of the passivation layer 17 may be lithium fluoride (LiF).

[0069] The battery processing system 100 may also include a passivation layer device 80. The passivation layer device 80 may be located on the side of the perovskite layer device 40 opposite to the first transport layer device 30, and may process the substrate 11 on which the perovskite layer 13 has been prepared, and prepare a passivation layer 17 on the surface of the perovskite layer 13.

[0070] The passivation layer equipment 80 may include a passivation layer evaporation device 81, which may pre-set LiF elements. The passivation layer evaporation device 81 can perform evaporation processing on the substrate 11 that has been formed into a perovskite layer 13, thereby preparing a LiF passivation layer 17 on the surface of the perovskite layer 13.

[0071] It is understood that the passivation layer 17 is disposed on the surface of the perovskite layer 13 to fill defects on the surface of the perovskite layer 13. The specific function and principle of the passivation layer 17 are general information in the relevant field and will not be elaborated here.

[0072] In some embodiments, the passivation layer apparatus 80 may further include a transfer device 70 located at the front end of the passivation layer evaporation apparatus 81 and used for feeding the passivation layer evaporation apparatus 81. The transfer device 70 can receive the substrate 11 removed from the perovskite layer apparatus 40 and transfer the substrate into the passivation layer evaporation apparatus 81. The passivation layer evaporation apparatus 81 is provided with a transfer mechanism (not shown), which can move the substrate 11 from the front end to the rear end of the passivation layer evaporation apparatus 81, and during the movement of the substrate 11, the passivation layer evaporation apparatus 81 can complete the evaporation process on the substrate 11.

[0073] It is understood that when the transfer device 70 transfers the substrate 11 to the rear end of the passivation layer evaporation device 81, the substrate 11 can enter the second transfer layer device 50.

[0074] In some embodiments, the second transport layer 14 is an electron transport layer, and the second transport layer device 50 is an electron transport layer device 50A, which is located between the passivation layer device 80 and the electrode layer device 60. For example, the material of the electron transport layer can be carbon sixty percent (C60).

[0075] The electron transport layer device 50A may include a transport layer evaporation apparatus 51. The transport layer evaporation apparatus 51 may be pre-set with C60 elements. The transport layer evaporation apparatus 51 can perform evaporation processing on the substrate 11 that has entered the transport layer evaporation apparatus 51 and completed the preparation of the passivation layer 17, thereby preparing a C60 electron transport layer on the surface of the passivation layer 17, that is, preparing a second transport layer 14.

[0076] The front end of the transport layer evaporation device 51 can be fixedly connected and communicated with the rear end of the passivation layer evaporation device 81, and a transition cavity can be provided between the chamber in the transport layer evaporation device 51 used for evaporating the substrate 11 and the chamber in the passivation layer evaporation device 81 used for evaporating the substrate 11. A transport mechanism (not shown) can be provided in the transport layer evaporation device 51. The transport mechanism of the passivation layer evaporation device 81 can transport the substrate 11 after the passivation layer 17 has been prepared to the transition cavity at its rear end. Then, the transport mechanism of the transport layer evaporation device 51 can receive the substrate 11 from the transition cavity and transport the substrate 11 from the front end to the rear end of the transport layer evaporation device 51. During the transport of the substrate 11, the evaporation process can be completed in the transport layer evaporation device 51.

[0077] It is understandable that when the second transport layer 14 is a C60 electron transport layer, the preparation process of the second transport layer 14 can be the same as or similar to the preparation process of the passivation layer 17. In this case, the passivation layer evaporation device 81 and the transport layer evaporation device 51 can be integrated into one evaporation device, and the passivation layer 17 and the second transport layer 14 can be prepared in different chambers of the evaporation device.

[0078] In some embodiments, the electron transport layer device 50A may further include a transport device 70 located at the rear end of the transport layer evaporation apparatus 51 and used for unloading the transport layer evaporation apparatus 51. The transport device 70 may receive the substrate 11 removed from the transport layer evaporation apparatus 51 and transport the substrate 11 toward the electrode layer device 60.

[0079] In other embodiments, when the second transport layer 14 is a hole layer and the first transport layer 12 is an electron transport layer, the second transport layer device 50 is a hole layer device 30A, and the first transport layer device 30 is an electron transport layer device 50A. In this case, the fabrication process of the second transport layer 14 is different from that of the passivation layer 17, and the hole layer device 30A and the passivation layer device 80 are independently configured, i.e., the second transport layer device 50 and the passivation layer device 80 are independently configured. In this case, the transport device 70 at the front end of the passivation layer evaporation apparatus 81 can receive the substrate 11 removed from the hole layer device 30A, and the passivation layer device 80 may also include a transport device 70 located at the rear end of the passivation layer evaporation apparatus 81, which can transport the substrate 11, after the passivation layer 17 has been fabricated, to the electrode layer device 60.

[0080] At this time, the electron transport layer device 50A may also include a transport device 70 located at the front end of the transport layer vapor deposition apparatus 51. The front-end transport device 70 can receive the substrate 11 and move the substrate 11 into the transport layer vapor deposition apparatus 51 for vapor deposition processing. The substrate 11 received by the front-end transport device can be the substrate 11 output by the conductive layer device 20 after the conductive layer 16 has been prepared. In some embodiments, the perovskite solar cell 10 may further include a buffer layer 18. The buffer layer 18 may be disposed between the second transport layer 14 and the electrode layer 15. For example, the buffer layer 18 may be made of tin oxide (SnOx), wherein SnOx is a non-stoichiometric tin oxide containing oxygen vacancies, and x < 2.

[0081] The buffer layer 18 may include a seed layer and a thick film layer. The thickness of the seed layer may be less than the thickness of the thick film layer, and the materials of the seed layer and the thick film layer may be the same. The buffer layer device 90 may include a first deposition device 91 and a second deposition device 92. The first deposition device 91 may be located between the second transport layer device 50 and the second deposition device 92, and the second deposition device 92 may be located between the second transport layer device 50 and the electrode layer device 60. The first deposition device 91 may perform atomic layer deposition (ALD) on the substrate 11 after the second transport layer 14 has been prepared, thereby forming a seed layer on the second transport layer 14. Then, the substrate 11 after the seed layer preparation can enter the second deposition device 92, where the second deposition device 92 may perform PVD on the substrate 11, thereby forming a thick film layer on the seed layer, thus completing the preparation of the buffer layer 18.

[0082] It is understandable that when the second transport layer device 50 is an electronic transport layer device 50A, the transport device 70 at the back end of the passivation layer evaporation device 81 can transport the substrate 11 that has completed the preparation of the second transport layer 50 to the front end of the first deposition device 91, so that the substrate 11 can continue to prepare the buffer layer 18.

[0083] It is understood that the buffer layer 18, positioned between the second transport layer 14 and the electrode layer 15, enhances the protection of the second transport layer 14 and reduces the likelihood of damage to the second transport layer 14 during the fabrication of the electrode layer 15. The specific functions and principles of the buffer layer 18 are general information in the relevant field and will not be elaborated upon here.

[0084] It is understood that the seed layer obtained by ALD processing has better coverage and uniformity, higher film density, and fewer pores compared to the thick film layer obtained by PVD processing. Therefore, the scheme in this application, which first uses ALD to obtain a dense and stable seed layer and then uses the more efficient PVD process to obtain a thick film layer, thus obtaining the buffer layer 18, improves the stability of the buffer layer 18 compared to a scheme that uses PVD processing entirely. Furthermore, compared to a scheme that uses ALD processing entirely, it maintains the stability of the buffer layer 18 while improving its fabrication efficiency, thereby increasing the processing efficiency of the perovskite solar cell 10.

[0085] In some embodiments, the first deposition apparatus 91 may be connected to the second deposition apparatus 92, and both the first deposition apparatus 91 and the second deposition apparatus 92 are provided with a transfer mechanism (not shown). The transfer mechanism can transfer the substrate 11 from the front end to the rear end of the first deposition apparatus 91, whereby the first deposition apparatus 91 can prepare a seed layer on the substrate 11 located within the first deposition apparatus 91. Then, the transfer mechanism can transfer the substrate 11 from the first deposition apparatus 91 to the second deposition apparatus 92, whereby the second deposition apparatus 92 can prepare a thick film layer on the substrate 11 located within the second deposition apparatus 92, thereby completing the preparation of the buffer layer 18. The transfer mechanism can remove the substrate 11, after the preparation of the buffer layer 18, from the second deposition apparatus 92 and move it to the electrode layer device 60.

[0086] In some embodiments, the electrode layer device 60 may include an electrode layer deposition apparatus 61, which may be located at the end of the second deposition apparatus 92 opposite to the first deposition apparatus 91 and may be in communication with the second deposition apparatus 92. A transport mechanism (not shown) may be provided in the electrode layer deposition apparatus 61 to transport the substrate with the buffer layer 18 prepared from the front end to the rear end of the electrode layer deposition apparatus 61. The electrode layer deposition apparatus 61 may perform PVD processing on the substrate 11 within the electrode layer deposition apparatus 61, thereby preparing the electrode layer 15 on the buffer layer 18 and completing the processing of the perovskite solar cell 10.

[0087] In the embodiments of this application, the type of electrode layer 15 is not specifically limited. For example, electrode layer 15 may be, but is not limited to, TCO electrode layer 15.

[0088] In some embodiments, the electrode layer apparatus 60 may further include a transfer device 70 located at the rear end of the electrode layer deposition apparatus 61. The transfer device 70 may receive the perovskite solar cell 10 removed from the electrode layer deposition apparatus 61 and remove the perovskite solar cell 10 from the cell processing system 100, thereby realizing the unloading of the perovskite solar cell 10.

[0089] In the battery processing system 100 provided by the embodiments of this application, when preparing the perovskite layer 13 of the perovskite solar cell 10, the roll coating device 42 can roll-coat the perovskite solution onto the substrate 11, and then the perovskite layer device group 44 further processes the substrate 11. The roll coating device 42 can improve the efficiency of perovskite solution coating, thereby improving the processing efficiency of the battery processing system 100 for the perovskite solar cell 10.

[0090] Meanwhile, the scheme of first obtaining a seed layer through ALD processing in the first deposition device 91, and then obtaining a thick film layer through PVD processing with higher processing efficiency, thereby obtaining a buffer layer 18, can improve the preparation efficiency of the buffer layer 18 while maintaining its stability, thereby improving the processing efficiency of the perovskite solar cell 10.

[0091] It will be apparent to those skilled in the art that this application is not limited to the details of the exemplary embodiments described above, and that this application can be implemented in other specific forms without departing from the spirit or essential characteristics of this application. Therefore, the embodiments described above should be considered exemplary and non-limiting in all respects, and the scope of this application is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within this application.

Claims

1. A battery processing system, characterized in that, For fabricating perovskite solar cells, the perovskite solar cell includes a substrate, a first transport layer, a perovskite layer, a second transport layer, and an electrode layer; the cell fabrication system includes: A first transport layer device, used to fabricate the first transport layer; A perovskite layer device is disposed on one side of the first transport layer device and is used to prepare the perovskite layer on the first transport layer; A second transport layer device is disposed on the side of the perovskite layer device opposite to the first transport layer device, and is used to prepare the second transport layer on the perovskite layer; An electrode layer device is disposed on the side of the second transport layer device opposite to the perovskite layer device, and is used to fabricate the electrode layer on the second transport layer; The perovskite layer equipment includes a roll coating device and a perovskite layer device group. The roll coating device is used to roll coating a perovskite solution onto the substrate. The roll coating device is located between the perovskite layer device group and the first transport layer device, and is used to coat the perovskite solution onto the first transport layer. The first transport layer and the second transport layer are respectively a hole layer and an electron transport layer, or the first transport layer and the second transport layer are respectively an electron transport layer and a hole layer.

2. The battery processing system as described in claim 1, characterized in that, The perovskite solar cell further includes a conductive layer, and the cell processing system further includes: A conductive layer device is disposed on the other side of the first transport layer device and is used to prepare the conductive layer on the substrate.

3. The battery processing system as described in claim 1, characterized in that, The perovskite layer device group includes: A flash evaporation device is disposed on the side of the roller coating device away from the first transfer layer device, and is used to flash process the substrate after the perovskite solution coating is completed, so that crystals are formed on the substrate; The perovskite layer annealing device is located on the side of the flash evaporation device away from the roll coating device, and is used to anneal the substrate after flash evaporation to complete the preparation of the perovskite layer.

4. The battery processing system as described in claim 1, characterized in that, The first transport layer device or the second transport layer device is an electronic transport layer device, the electronic transport layer device comprising: A transport layer evaporation apparatus is disposed on one side of the perovskite layer apparatus group. The transport layer evaporation apparatus is used to perform evaporation processing on the substrate to complete the preparation of the electron transport layer.

5. The battery processing system as described in claim 1, characterized in that, The perovskite solar cell further includes a passivation layer disposed on the perovskite layer. The cell processing system further includes a passivation layer device, which includes: A passivation layer evaporation device is disposed on one side of the perovskite layer device group. The passivation layer evaporation device is used to perform evaporation processing on the substrate to prepare the passivation layer on the perovskite layer.

6. The battery processing system as described in claim 3, characterized in that, The perovskite solar cell further includes a buffer layer disposed between the second transport layer and the electrode layer, and the cell processing system further includes a buffer layer device; The buffer layer includes a seed layer and a thick film layer, the thick film layer covering the seed layer, and the electron transport layer device includes: A first deposition apparatus is disposed on one side of the electron transport device and is used to perform atomic layer deposition on the substrate to prepare the seed layer on the second transport layer; The second deposition apparatus is disposed on the side of the first deposition apparatus away from the second transport layer apparatus, and is used to perform physical vapor deposition on the substrate to prepare the thick film layer on the seed layer.

7. The battery processing system as described in claim 1, characterized in that, The first transport layer device or the second transport layer device is a hole layer device, the hole layer device comprising: A scraping device is disposed on one side of the perovskite layer device and is used to coat the substrate with a void layer solution; A cavity layer annealing apparatus is disposed on one side of the coating apparatus. The cavity layer annealing apparatus is used to anneal the substrate coated with the cavity layer solution to form a film of the cavity layer solution, thereby completing the preparation of the cavity layer. A cleaning device is disposed on the side of the cavity layer annealing device away from the coating device, and is used to clean the substrate after the cavity layer preparation is completed.

8. The battery processing system as described in claim 7, characterized in that, The cavity layer device also includes: The first flipping device is disposed on the side of the scraping device away from the cavity layer annealing device, and is used to flip the substrate so that the scraping device coats the flipped substrate with the cavity layer solution. The second flipping device is disposed between the scraping device and the cavity layer annealing device, and is used to flip the substrate coated with the cavity layer solution again, so that the cavity layer annealing device can anneal the substrate that has been flipped again and coated with the cavity layer solution.

9. The battery processing system as described in claim 1, characterized in that, The perovskite layer device also includes: The third flipping device is located on the side of the roller coating device away from the perovskite layer device group and is used to flip the substrate to coat the flipped substrate with a perovskite solution. A fourth flipping device is disposed between the roller coating device and the perovskite layer device group, and is used to flip the substrate coated with perovskite solution again, so that the perovskite layer device group can process the substrate that has been flipped again and coated with perovskite solution.

10. The battery processing system as described in claim 1, characterized in that, The electrode layer device includes: An electrode layer deposition apparatus is disposed on the side of the perovskite layer apparatus group away from the roll coating apparatus, and is used to perform physical vapor deposition on the substrate to prepare the electrode layer.

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