Highly uniform large size perovskite film annealing device

Abstract

The utility model relates to solar cell technical field, specifically a kind of high uniformity large size perovskite film annealing device, including heating system, adsorption system, atmosphere control system, heat preservation system, data processing and control system, support system;Heating system contains the heating unit and heat conduction unit of integral electric control heating and the adsorption groove of panel surface is equipped, adsorption system is adhered by vacuum pump air extraction to film layer matrix and heating unit to resist instantaneous temperature difference warping, atmosphere control system contains furnace body with gas pipeline and atmosphere compensation substrate to regulate and control atmosphere, data system is equipped with process parameter and gathers temperature, pressure and so on Data control each system, support system supports and fixes each component, the utility model discloses high uniformity large size perovskite film annealing device, can realize film layer uniform heating and accurate atmosphere control, improve perovskite film quality and stability, solve the problem that existing annealing defect is more, film forming uniformity is poor, suitable for large size film annealing.

Description

Technical Field

[0001] This utility model relates to the field of solar cell technology, specifically to an annealing device for highly uniform large-size perovskite films. Background Technology

[0002] Perovskite materials, with their strong light absorption, low cost, and simple preparation methods, have become a research hotspot in the photovoltaic field in recent years. The current conventional preparation process for perovskite thin films involves preparing a wet film using methods such as spin coating, blade coating, or slot coating, followed by annealing to promote solvent evaporation and obtain a perovskite crystalline thin film. Perovskite annealing, in particular, refers to the growth of perovskite grains through heating and temperature control, removing some impurities and defects. This is a key factor affecting the quality of perovskite solar cells, and the annealing process requires a rapid heating rate and good temperature uniformity.

[0003] Currently, the annealing methods for conventional large-area perovskite solar cells mainly rely on static heating with flat-plate hot plates or dynamic heating with infrared lamps. However, these heating methods tend to generate many defects on the surface of the perovskite film, and the overall heating effect is difficult to meet the quality requirements of perovskite solar cells. Therefore, developing a highly uniform large-size perovskite film annealing device to address the shortcomings of existing annealing technologies has become an urgent problem to be solved in this industry. Summary of the Invention

[0004] The purpose of this invention is to provide an annealing device for highly uniform large-size perovskite films to solve the problems mentioned in the background art.

[0005] To achieve the above objectives, this utility model provides the following technical solution: An annealing apparatus for highly uniform large-size perovskite films includes a heating system, an adsorption system, an atmosphere control system, a heat preservation system, a data processing and control system, and a support system. The heating system includes a heating unit and a heat conduction unit. The heat conduction unit covers the surface of the heating unit. The heating unit is an integral electronically controlled heating plate structure. The plate surface is provided with an adsorption groove for adsorbing the film substrate. The film substrate includes a glass substrate. The adsorption system includes an adsorption pipeline, a switching valve, a vacuum pump, and a venting valve. One end of the adsorption pipeline is connected to the adsorption tank of the heating unit, and the other end is connected to the switching valve and the vacuum pump in sequence. The venting valve is connected in parallel to the adsorption pipeline. The atmosphere control system includes atmosphere control system A and atmosphere control system B. Atmosphere control system A includes a furnace body, a gas inlet dispersion pipe, a gas inlet transmission pipe, a gas outlet pipe, a gas inlet control valve, and a gas outlet control valve. One end of the gas inlet transmission pipe is connected to the gas inlet dispersion pipe, and the other end extends out of the furnace body. One end of the gas outlet pipe is connected to the inside of the furnace body, and the other end extends out of the furnace body. The gas inlet control valve and the gas outlet control valve are respectively installed on the gas inlet transmission pipe and the gas outlet pipe. Atmosphere control system B includes an atmosphere compensation substrate and an atmosphere compensation substrate mounting base. The atmosphere compensation substrate is installed in the furnace body through the atmosphere compensation substrate mounting base and is located above the heating unit. An atmosphere compensation diffusion layer is provided on the surface of the atmosphere compensation substrate, and the atmosphere compensation diffusion layer diffuses the compensation atmosphere to the film layer. The insulation system includes the installation of a heat insulation layer and a furnace body insulation layer; The data processing and control system includes a data collection unit, a data processing and analysis unit, and a control unit. The support system includes a support base, a support frame, and an outer shell. The support frame is installed on the support base, and the outer shell is installed on the support base and the outer periphery of the support frame.

[0006] As a further embodiment of this utility model: in the support system, the support base is located at the bottom of the annealing device, and a support frame is provided on the support base. The heating system, adsorption system, atmosphere control system and heat preservation system are all installed on the support frame.

[0007] As a further embodiment of this utility model: the heating unit of the heating system is located inside the furnace and is in contact with the back of the film substrate; the vacuum pump of the adsorption system draws air through the adsorption pipeline, so that the film substrate and the heating unit are tightly adhered together. The atmosphere control system introduces gas into the furnace through the gas inlet transmission pipe and discharges the existing gas from the furnace through the gas outlet pipe.

[0008] As a further embodiment of this utility model: the adsorption tank of the heating unit is connected to the adsorption pipeline in the adsorption system, the switching valve controls the opening and closing of the adsorption pipeline, and the venting valve changes the air pressure in the adsorption tank by opening and closing. The heat conduction unit is prepared by spraying, brushing, dipping, or sticking onto the surface of the heating unit, and the heat insulation layer is mechanically or metallurgically bonded to the heating unit substrate.

[0009] As a further embodiment of this utility model: the installation insulation layer of the heat preservation system is disposed between the heating unit and the support frame, and the installation insulation layer is one or more combinations of organic material, inorganic material insulation board, and board with insulation coating; The furnace body insulation layer is set on the inside of the furnace body or the outer periphery of the furnace body. The furnace body insulation layer is one or more of the following combinations: insulation cotton, insulation tape, and insulation coating.

[0010] As a further embodiment of this utility model: the width of the adsorption groove is ≤2mm, and the adsorption groove is arranged in a ring shape from the edge to the center on the surface of the heating unit; The adsorption tank can be one or more of the following shapes: rectangular, V-shaped, Y-shaped, inverted V-shaped, inverted Y-shaped, and annular.

[0011] As a further embodiment of this utility model: the perovskite film annealing device is a single furnace or a multi-furnace structure, wherein each furnace in the multi-furnace structure is an independent unit.

[0012] As a further embodiment of this utility model: the data collection unit includes a temperature sensor, a pressure sensor and a flow meter, wherein the temperature sensor is a contact or non-contact type and is disposed on the inner surface of the heating unit or the furnace body. Pressure sensors are installed on the adsorption pipeline, the gas inlet transmission pipeline, and the gas outlet pipeline; The data collection unit is electrically connected to the data processing and analysis unit, the data processing and analysis unit is electrically connected to the control unit, and the control unit is electrically connected to the heating system, the adsorption system, and the atmosphere control system, respectively.

[0013] As a further aspect of this utility model: the gas introduced into the furnace body is one of an inert gas or a chemical reaction gas; The gas inlet and outlet pipe is located in the lower middle part of the furnace body, and the gas outlet pipe is located at the top of the furnace body.

[0014] As a further embodiment of this utility model: the heating unit is disposed inside the furnace body, and the effective annealing dimensions of the heating unit are set to a length ≤ 3m and a width ≤ 2m.

[0015] Compared with the prior art, the beneficial effects of this utility model are: 1. The present invention provides a high-uniformity, large-size perovskite film annealing device. The heating system directly heats the film substrate by contacting the back side of the film substrate, and the adsorption system uses a vacuum pump to draw air to make the film substrate and the heating unit adhere tightly. This allows the perovskite film to be uniformly heated to the point of crystal growth in a very short time. At the same time, the adsorption system can effectively resist the warping deformation of the film substrate caused by instantaneous temperature difference, achieving a uniform heating effect on a large area of ​​film, avoiding localized uneven heating caused by substrate warping, and reducing surface defects of the film. 2. Atmosphere control system A introduces new gas into the furnace and discharges the original gas to achieve precise atmosphere control in the furnace. In conjunction with the atmosphere compensation substrate in atmosphere control system B, the diffusion atmosphere effectively compensates for the atmosphere on the surface of the annealed film layer, which can change the growth environment of the perovskite film crystals, further optimize the local atmosphere on the surface of the film layer, ensure the consistency of perovskite grain growth, and improve the density of the film layer. 3. The heat preservation system reduces heat loss and prevents the support frame from deforming due to heat by setting a heat insulation layer between the heating unit and the support frame, and setting a furnace body heat preservation layer on the inside or outside of the furnace body. At the same time, it maintains a stable temperature inside the furnace, avoids uneven growth of perovskite grains due to temperature fluctuations, reduces energy consumption of the device, and ensures annealing quality. 4. The data processing and control system can set the annealing process parameters of the film layer. The data collection unit collects temperature, pressure and flow data in real time. After the data processing and analysis unit compares the data with the preset process parameters, the control unit adjusts the operating parameters of each system to realize the automated and precise control of the annealing process, avoid human operation errors, and ensure that the annealing process is strictly carried out according to the process. 5. The overall device can be configured as a single furnace or a multi-furnace structure (in the multi-furnace structure, the furnaces are independent units, which can realize simultaneous or step-by-step operation), and the effective annealing dimensions of the heating unit are ≤3m in length and ≤2m in width (1.2m in length and 0.6m in width in the example), which can meet the annealing requirements of large-size perovskite films, and ultimately greatly improve the quality and stability of perovskite films, forming a dense and uniform perovskite film layer, effectively solving the technical problems of many defects and poor film uniformity in the annealing process of perovskite films in the prior art. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the annealing device in this utility model.

[0017] Figure 2 This is a cross-sectional view of the annealing device in this utility model.

[0018] Figure 3 This is a schematic diagram of the adsorption tank of the heating unit in this utility model.

[0019] Figure 4 This is a schematic diagram of the cross-sectional shape of the adsorption tank in this utility model.

[0020] Figure 5 This is a schematic diagram of the compensating atmosphere diffusion in this utility model.

[0021] In the diagram: 1-Heating system, 11-Heating unit, 11-1-Adsorption tank, 12-Heat conduction unit, 2-Adsorption system, 21-Adsorption pipeline, 22-Switch valve, 23-Vacuum pump, 24-Vacuum breaker valve, 3-Atmosphere control system, 31-Atmosphere control system A, 311-Furnace body, 312-Gas inlet dispersion pipeline, 313-Gas inlet transmission pipeline, 314-Gas outlet pipeline, 315-Gas inlet control switch valve, 316-Gas outlet control switch valve, 32-Gas Atmosphere control system B, 321-Atmosphere compensation substrate, 322-Atmosphere compensation substrate mounting base, 323-Atmosphere compensation diffusion layer, 4-Insulation system, 41-Insulation layer, 42-Furnace body insulation layer, 5-Data processing and control system, 51-Data collection unit, 511-Temperature sensor, 512-Pressure sensor, 513-Flow meter, 52-Data processing and analysis unit, 53-Control unit, 6-Support system, 61-Support base, 62-Support frame, 63-Outer shell. Detailed Implementation

[0022] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0023] The specific implementation of this utility model will be described in detail below with reference to specific embodiments.

[0024] Please see Figures 1-5 This utility model provides an annealing device for highly uniform large-size perovskite films. The device includes a heating system 1, an adsorption system 2, an atmosphere control system 3, a heat preservation system 4, a data processing and control system 5, and a support system 6. These systems work together to achieve highly uniform annealing of the perovskite film. Specific details are as follows: In one embodiment of the present invention, the support system 6 includes a support base 61, a support frame 62, and an outer shell 63; The support base 61 is located at the bottom of the annealing device, providing basic support for the entire device. A support frame 62 is fixedly installed on the support base 61. The support frame 62 is used to support and fix the heating system 1, adsorption system 2, atmosphere control system 3 and heat preservation system 4, ensuring the relative position of each system within the device is stable. The outer shell 63 is installed around the support base 61 and the support frame 62, forming an external protective structure for the device to prevent interference from the external environment to the internal systems.

[0025] The support system 6 is assembled and fixed before the device is put into operation. The core systems, such as the heating system 1 and the adsorption system 2, are fixed to the support frame 62 by mechanical connection. After the outer shell 63 is closed, it forms a closed external frame, providing a stable installation foundation and protective environment for the operation of the internal systems. Through the bottom support of the support base 61, the internal fixation of the support frame 62, and the external protection of the outer shell 63, the structural stability of the entire annealing device is ensured, and the positional displacement of each system is avoided due to vibration or external interference, thereby ensuring the stability of the perovskite film annealing process.

[0026] In one embodiment of the present invention, the heating system 1 includes a heating unit 11 and a heat conduction unit 12; The heating unit 11 is a flat plate structure with overall electronic heating. Its plate surface is provided with an adsorption groove 11-1 (for adsorbing film substrates such as glass substrates). The heating unit 11 is fixedly installed on the support frame 62 and located in the furnace body 311 of the atmosphere control system 3. The heat conduction unit 12 is prepared by spraying on the surface of the heating unit 11. The heat conduction unit 12 and the heating unit 11 substrate are metallurgically bonded. At the same time, the heat insulation layer 41 and the heating unit 11 substrate are mechanically or metallurgically bonded.

[0027] After the control unit 53 of the data processing and control system 5 sends a heating command to the heating system 1, the heating unit 11 generates heat through electronic control. The heat is evenly transferred to the upper surface of the heating unit 11 through the heat conduction unit 12. When the film substrate (such as a glass substrate) is placed on the surface of the heating unit 11, the heat conduction unit 12 directly transfers the heat to the back side of the film substrate, realizing contact heating of the film substrate.

[0028] The flat plate structure with integrated electronic heating, combined with the uniform heat conduction of the heat conduction unit 12, enables uniform heat distribution on the surface of the heating unit 11. The contact heating method shortens the heat transfer path, allowing the film substrate to quickly reach the required annealing temperature, and avoids the temperature unevenness problems caused by non-contact heating, providing a temperature basis for the uniform crystallization of the perovskite film. Simultaneously, the effective annealing dimensions of the heating unit 11 are 1.2m in length and 0.6m in width, meeting the annealing requirements of large-size perovskite films.

[0029] In one embodiment of the present invention, the adsorption system 2 includes an adsorption pipeline 21, a switching valve 22, a vacuum pump 23, and a venting valve 24. One end of the adsorption pipeline 21 is connected to the adsorption tank 11-1 (or adsorption hole) of the heating unit 11, and the other end is connected to the switch valve 22 and the vacuum pump 23 in sequence; the venting valve 24 is connected in parallel to the adsorption pipeline 21 and is located between the switch valve 22 and the heating unit 11; the entire adsorption system 2 is fixed on the support frame 62 by the pipeline bracket and works in coordination with the heating system 1. The adsorption groove 11-1 has a width of 1mm and is arranged in a rectangular ring from the edge to the center on the surface of the heating unit 11. In addition to the Y-shaped adsorption groove 11-1 used in this embodiment, the adsorption groove 11-1 can also be set as one or more combinations of rectangle, V-shape, inverted V-shape, inverted Y-shape, and ring. The diameter of the adsorption hole is ≤2mm (if an adsorption hole is used in this embodiment, its diameter can be set to 1mm). The adsorption hole is also arranged in a ring from the edge to the center on the surface of the heating unit 11, and the adsorption hole can be set as one or a combination of semi-circular and semi-elliptical. In this embodiment, the Y-shaped adsorption groove 11-1 and the semi-circular adsorption hole are used in combination to take into account both adsorption stability and processing convenience.

[0030] After the film substrate is placed on the surface of the heating unit 11, the control unit 53 controls the switch valve 22 to open and the venting valve 24 to close, and at the same time starts the vacuum pump 23. The vacuum pump 23 evacuates the adsorption tank 11-1 (or adsorption hole) of the heating unit 11 through the adsorption pipe 21, so that a negative pressure is formed in the adsorption tank 11-1 (or the form of an adsorption hole), thereby tightly adsorbing the film substrate onto the surface of the heating unit 11. After the annealing process is completed, the control unit 53 controls the vacuum pump 23 to stop working, closes the switch valve 22 and opens the venting valve 24, outside air enters the adsorption tank 11-1, the negative pressure disappears, and the film substrate can be removed from the surface of the heating unit 11.

[0031] Negative pressure adsorption ensures a tight bond between the film substrate and the surface of the heating unit 11, resisting warping deformation of the film substrate caused by instantaneous temperature differences (temperature difference between the heating unit 11 and the film substrate during the initial heating stage). This close contact further guarantees uniform heat transfer, preventing uneven heating caused by substrate warping, reducing surface defects in the perovskite film, and improving film quality. Simultaneously, different types of adsorption grooves 11-1 (such as V-shaped and inverted Y-shaped) can accommodate film substrates of different sizes or shapes. Semi-circular / semi-elliptical adsorption holes reduce the impact on heat conduction on the surface of the heating unit 11 while maintaining adsorption force, enhancing the versatility of the device.

[0032] In one embodiment of this utility model, the atmosphere control system 3 includes an atmosphere control system A31 and an atmosphere control system B32; wherein, the atmosphere control system A31 includes a furnace body 311, a gas inlet dispersion pipe 312, a gas inlet transmission pipe 313, a gas outlet pipe 314, a gas inlet control switch valve 315, and a gas outlet control switch valve 316; the atmosphere control system B32 includes an atmosphere compensation substrate 321 (an atmosphere compensation diffusion layer 323 is provided on the atmosphere compensation substrate 321) and an atmosphere compensation substrate mounting base 322, wherein the compensation atmosphere in this embodiment is a methylamine solution; The furnace body 311 is fixedly installed on the support frame 62, and the heating unit 11 and the atmosphere compensation substrate 321 are enclosed inside. One end of the gas inlet transmission pipe 313 is connected to an external gas source (such as an inert gas source), and the other end passes through the side wall of the furnace body 311 and is connected to the gas inlet dispersion pipe 312. The gas inlet control switch valve 315 is installed on the gas inlet transmission pipe 313. One end of the gas outlet pipe 314 is connected to the top of the furnace body 311, and the other end extends to the outside of the device. The gas outlet control switch valve 316 is installed on the gas outlet pipe 314. The gas inlet dispersion pipe 312 is located in the middle and lower position of the furnace body 311 to ensure that the gas is evenly diffused in the furnace body 311.

[0033] The atmosphere compensation substrate mounting base 322 is fixed on the inner side wall of the furnace body 311, and the atmosphere compensation substrate 321 is mounted on the atmosphere compensation substrate mounting base 322. The atmosphere compensation substrate 321 is located directly above the heating unit 11 and maintains a preset distance from the heating unit 11.

[0034] Before annealing begins, the control unit 53 controls the gas inlet control valve 315 and the gas outlet control valve 316 to open. An external gas source (in this embodiment, an inert gas; if it is necessary to adjust the crystallization characteristics of the perovskite film, a corresponding chemical reaction gas can also be selected) enters the gas inlet dispersion pipe 312 through the gas inlet transmission pipe 313, and is then evenly dispersed into the furnace body 311 through the gas inlet dispersion pipe 312. The original air in the furnace body 311 is discharged through the gas outlet pipe 314 until the furnace body 311 is filled with inert gas (the pressure inside the furnace body is detected by the pressure sensor 512 to confirm that the atmosphere replacement is complete).

[0035] During the annealing process, the atmosphere compensation substrate 321 replenishes the upper surface of the film substrate (i.e., the surface of the perovskite film) with an inert atmosphere through its own atmosphere diffusion effect, so as to avoid uneven local atmosphere concentration in the furnace body 311. At the same time, the control unit 53 monitors the gas flow rate through the flow meter 513 and monitors the pressure in the furnace body through the pressure sensor 512, and adjusts the opening of the gas inlet control valve 315 and the gas outlet control valve 316 in real time to maintain the stability of the atmosphere in the furnace body 311.

[0036] By controlling the gas replacement and flow rate of the atmosphere control system A31, the atmosphere inside the furnace body 311 can be precisely regulated (such as an inert gas or chemical reaction gas atmosphere), avoiding oxidation of the perovskite film during annealing and reducing film defects. The atmosphere compensation substrate 321 can further optimize the local atmosphere environment on the film surface, ensuring the consistency of perovskite grain growth and improving the density and uniformity of the film.

[0037] In one embodiment of the present invention, the heat preservation system 4 includes a heat insulation layer 41 and a furnace body heat preservation layer 42. The heat insulation layer 41 is installed between the heating unit 11 and the support frame 62 and is fixed to the support frame 62 by bolts. The heat insulation layer 41 is an inorganic heat insulation board. In addition, the heat insulation layer 41 can also be selected from one or more combinations of organic materials and heat insulation coating boards as described in the claims. The furnace body insulation layer 42 is installed on the inner wall of the furnace body 311. The furnace body insulation layer 42 is a heat insulation cotton structure. According to the actual heat insulation requirements, the furnace body insulation layer 42 can also adopt one or more combinations of heat insulation tape and heat insulation coating as described in the claims and is fixed to the inner wall of the furnace body 311 by adhesive bonding.

[0038] When the heating system 1 is working, the heat insulation layer 41 prevents the heat generated by the heating unit 11 from being transferred to the support frame 62, reducing heat loss downwards; the furnace body insulation layer 42 prevents the heat inside the furnace body 311 from being transferred to the external environment, maintaining a stable temperature inside the furnace body 311. During the annealing process, the insulation system 4 continuously plays an insulating role, working in conjunction with the temperature control of the heating system 1 to keep the temperature fluctuation inside the furnace body 311 within a preset range.

[0039] The installation of the heat insulation layer 41 prevents the support frame 62 from deforming due to heat, reduces heat waste, and improves heating efficiency. The furnace body insulation layer 42 maintains a stable temperature inside the furnace body 311, preventing uneven growth of perovskite grains due to temperature fluctuations, further ensuring the annealing quality of the perovskite film, and reducing the energy consumption of the device. Different materials for the heat insulation layer and furnace body insulation layer can be adapted to different annealing temperature requirements (e.g., for high-temperature annealing, an inorganic heat insulation board + insulation cotton combination can be selected, while for low-temperature annealing, an organic heat insulation board + insulation coating combination can be selected), improving the applicability of the device.

[0040] In one embodiment of the present invention, the data processing and control system 5 includes a data collection unit 51, a data processing and analysis unit 52, and a control unit 53; wherein, the data collection unit 51 includes a temperature sensor 511, a pressure sensor 512, and a flow meter 513.

[0041] The temperature sensor 511 is a contact type (in this embodiment, a contact type is chosen to ensure temperature measurement accuracy, but a non-contact type can also be used according to actual needs), and the temperature sensor 511 is inserted into the heating unit 11 to collect the real-time temperature of the heating unit 11; the pressure sensor 512 is installed on the adsorption pipe 21, the gas inlet transmission pipe 313, and the gas outlet pipe 314 respectively to detect the real-time pressure in each pipe; the flow meter 513 is installed on the gas inlet transmission pipe 313 to detect the gas flow rate entering the furnace body 311.

[0042] The data collection unit 51 is electrically connected to the data processing and analysis unit 52 via a data cable, and the data processing and analysis unit 52 is electrically connected to the control unit 53. The control unit 53 is electrically connected to the electrical control module of the heating system 1, the switching valve 22 / vacuum pump 23 / venting valve 24 of the adsorption system 2, and the gas inlet control switching valve 315 / gas outlet control switching valve 316 of the atmosphere control system 3 via control cables, so as to realize unified control of each system.

[0043] Parameter settings: Users can set the film annealing process parameters (such as annealing temperature, holding time, gas pressure inside the furnace, adsorption negative pressure value, etc.) through the input interface of the control unit 53. Data acquisition: Temperature sensor 511 of data collection unit 51 collects temperature data of heating unit 11 in real time, pressure sensor 512 collects pressure data of each pipeline in real time, flow meter 513 collects gas flow data in real time, and transmits the collected data to data processing and analysis unit 52. Data processing: The data processing and analysis unit 52 receives the data collected by the data collection unit 51 and compares the collected data with the preset annealing process parameters to determine whether the current operating status meets the process requirements; if not, the data processing and analysis unit 52 sends an adjustment signal to the control unit 53. System control: The control unit 53 sends control commands to the corresponding systems (such as temperature adjustment of heating system 1, negative pressure adjustment of adsorption system 2, and gas flow adjustment of atmosphere control system 3) based on the signals from the data processing and analysis unit 52, until each operating parameter meets the preset process requirements.

[0044] Through real-time data acquisition by the data collection unit 51, comparative analysis by the data processing and analysis unit 52, and precise control by the control unit 53, automated control of temperature, atmosphere, and adsorption state during the annealing process is achieved, avoiding errors caused by manual operation. The real-time control function can promptly correct parameter deviations, ensuring that the entire annealing process strictly follows the preset process, greatly improving the stability and consistency of perovskite film annealing quality. Meanwhile, the option of contact and non-contact temperature sensors can be adapted to scenarios with high temperature measurement accuracy requirements (such as small-sized films) and high requirements for non-contact interference with the heating unit (such as easily damaged films), further enhancing the flexibility of the device.

[0045] In summary, the collaborative workflow of the overall device of this utility model is as follows: Preparation stage: Place the prepared wet film substrate (such as a glass substrate) on the surface of the heating unit 11; set the annealing process parameters (temperature, holding time, inert gas flow rate, etc.) through the control unit 53. Atmosphere replacement: Control unit 53 controls the gas inlet control valve 315 and gas outlet control valve 316 of atmosphere control system A31 to open, introduce inert gas, and discharge air from furnace body 311 until furnace body 311 is filled with inert gas. Adsorption and fixation: The control unit 53 controls the opening of the switching valve 22 and the closing of the venting valve 24 of the adsorption system 2, and starts the vacuum pump 23 to adsorb and fix the film substrate onto the surface of the heating unit 11. Heating and annealing: Control unit 53 controls the heating system 1 to start, heating unit 11 heats up to the preset temperature and holds for the preset time; during the annealing process, data collection unit 51 collects parameters in real time, data processing and analysis unit 52 compares and analyzes, control unit 53 adjusts the parameters of each system in real time, and atmosphere compensation substrate 321 continuously replenishes the atmosphere on the film surface. Final stage: After annealing is completed, the control unit 53 controls the heating system 1 to stop heating. After the temperature drops to a safe range, the vacuum pump 23 is turned off, the venting valve 24 is opened, and adsorption is released. The control atmosphere control system A31 stops the gas supply, the furnace body 311 is opened, and the film substrate is taken out.

[0046] Therefore, this utility model's high-uniformity, large-size perovskite film annealing device solves the technical problems of uneven film heating, numerous surface defects, and poor film uniformity in conventional annealing devices through the contact-type uniform heating of the heating system 1, the tight bonding and fixing of the adsorption system 2 (including various adsorption tanks 11-1 / adsorption pore structure adaptations), the precise atmosphere control of the atmosphere control system 3 (including inert / chemical reaction gas options), the heat loss control of the insulation system 4 (including various insulation material combinations), and the automated control of the data processing and control system 5 (including contact / non-contact temperature sensors options). Ultimately, it can form a dense and uniform perovskite film. The device can be configured as a single furnace or a multi-furnace structure (in a multi-furnace structure, the furnaces are independent units, allowing for simultaneous or step-by-step operation). The effective annealing dimensions of the heating unit 11 are ≤3m in length and ≤2m in width (1.2m in length and 0.6m in width in the embodiment), meeting the annealing requirements of large-size perovskite films and providing equipment support for the quality improvement and large-scale production of perovskite solar cells.

[0047] It should be noted that, in this utility model, unless otherwise explicitly specified and limited, the terms "sliding," "rotating," "fixed," and "equipped" should be interpreted broadly. For example, they can refer to welded connections, bolted connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0048] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. An annealing apparatus for highly uniform large-size perovskite films, characterized in that: It includes a heating system (1), an adsorption system (2), an atmosphere control system (3), a heat preservation system (4), a data processing and control system (5), and a support system (6). The heating system (1) includes a heating unit (11) and a heat conduction unit (12). The heat conduction unit (12) covers the surface of the heating unit (11). The heating unit (11) is an overall electrically controlled heating plate structure. The plate surface is provided with an adsorption groove (11-1) for adsorbing the film substrate. The film substrate includes a glass substrate. The adsorption system (2) includes an adsorption pipeline (21), a switching valve (22), a vacuum pump (23), and a venting valve (24). One end of the adsorption pipeline (21) is connected to the adsorption tank (11-1) of the heating unit (11), and the other end is connected to the switching valve (22) and the vacuum pump (23) in sequence. The venting valve (24) is connected in parallel to the adsorption pipeline (21). The atmosphere control system (3) includes atmosphere control system A (31) and atmosphere control system B (32). Atmosphere control system A (31) includes furnace body (311), gas inlet dispersion pipe (312), gas inlet transmission pipe (313), gas outlet pipe (314), gas inlet control switch valve (315), and gas outlet control switch valve (316). One end of the gas inlet transmission pipe (313) is connected to the gas inlet dispersion pipe (312), and the other end extends out of the furnace body (311). One end of the gas outlet pipe (314) is connected to the inside of the furnace body (311), and the other end extends out of the furnace body (311). In addition to 311), the gas inlet control switch valve (315) and the gas outlet control switch valve (316) are respectively installed on the gas inlet transmission pipe (313) and the gas outlet pipe (314); the atmosphere control system B (32) includes an atmosphere compensation substrate (321) and an atmosphere compensation substrate mounting base (322). The atmosphere compensation substrate (321) is installed in the furnace body (311) through the atmosphere compensation substrate mounting base (322) and is located above the heating unit (11). An atmosphere compensation diffusion layer (323) is provided on the surface of the atmosphere compensation substrate (321). The atmosphere compensation diffusion layer (323) diffuses the compensation atmosphere to the film layer. The insulation system (4) includes the installation of a heat insulation layer (41) and a furnace body insulation layer (42). The data processing and control system (5) includes a data collection unit (51), a data processing and analysis unit (52), and a control unit (53). The support system (6) includes a support base (61), a support frame (62) and an outer shell (63). The support frame (62) is installed on the support base (61), and the outer shell (63) is installed on the outer periphery of the support base (61) and the support frame (62).

2. The annealing apparatus for highly uniform large-size perovskite films according to claim 1, characterized in that, In the support system (6), the support base (61) is located at the bottom of the annealing device, and the support frame (62) is provided on the support base (61). The heating system (1), adsorption system (2), atmosphere control system (3) and heat preservation system (4) are all installed on the support frame (62).

3. The annealing apparatus for highly uniform large-size perovskite films according to claim 1 or 2, characterized in that, The heating unit (11) of the heating system (1) is located inside the furnace body (311) and is in contact with the back of the film substrate; the vacuum pump (23) of the adsorption system (2) draws air through the adsorption pipeline (21) so that the film substrate and the heating unit (11) are tightly adhered. The atmosphere control system (3) introduces gas into the furnace body (311) through the gas inlet transmission pipe (313) and discharges the original gas in the furnace body (311) through the gas outlet pipe (314).

4. The annealing apparatus for highly uniform large-size perovskite films according to claim 1, characterized in that, The adsorption tank (11-1) of the heating unit (11) is connected to the adsorption pipeline (21) in the adsorption system (2). The switching valve (22) controls the opening and closing of the adsorption pipeline (21), and the venting valve (24) changes the air pressure in the adsorption tank (11-1) by opening and closing. The heat conduction unit (12) is prepared by spraying, brushing, dipping or sticking on the surface of the heating unit (11), and the heat insulation layer is mechanically or metallurgically bonded to the substrate of the heating unit (11).

5. The annealing apparatus for highly uniform large-size perovskite films according to claim 1 or 4, characterized in that, The heat insulation layer (41) of the heat insulation system (4) is disposed between the heating unit (11) and the support frame (62). The heat insulation layer (41) is one or more of the following: organic material, inorganic material heat insulation board, and heat insulation coating board. The furnace body insulation layer (42) is located on the inner side of the furnace body (311) or on the outer periphery of the furnace body (311). The furnace body insulation layer (42) is one or more of the following: insulation cotton, insulation tape, and insulation coating.

6. The annealing apparatus for highly uniform large-size perovskite films according to claim 4, characterized in that, The width of the adsorption groove (11-1) is ≤2mm, and the adsorption groove (11-1) is arranged in a ring from the edge to the center on the surface of the heating unit (11); The adsorption tank (11-1) can be one or more combinations of rectangular, V-shaped, Y-shaped, inverted V-shaped, inverted Y-shaped, and annular.

7. The annealing apparatus for highly uniform large-size perovskite films according to claim 1 or 2, characterized in that, The perovskite film annealing device is a single furnace or a multi-furnace structure, and each furnace (311) in the multi-furnace structure is an independent unit.

8. The annealing apparatus for highly uniform large-size perovskite films according to claim 7, characterized in that, The data collection unit (51) includes a temperature sensor (511), a pressure sensor (512), and a flow meter (513). The temperature sensor (511) is either a contact type or a non-contact type and is located on the inner surface of the heating unit (11) or the furnace body (311). Pressure sensors (512) are installed on the adsorption line (21), the gas inlet transmission line (313), and the gas outlet line (314); The data collection unit (51) is electrically connected to the data processing and analysis unit (52), the data processing and analysis unit (52) is electrically connected to the control unit (53), and the control unit (53) is electrically connected to the heating system (1), the adsorption system (2), and the atmosphere control system (3), respectively.

9. The annealing apparatus for highly uniform large-size perovskite films according to claim 1, characterized in that, The gas introduced into the furnace body (311) is either an inert gas or a chemical reaction gas; The gas inlet dispersion pipe (312) is located in the lower middle position of the furnace body (311), and the gas outlet pipe (314) is located at the top position of the furnace body (311).

10. The annealing apparatus for highly uniform large-size perovskite films according to claim 1, characterized in that, The heating unit (11) is located inside the furnace body (311), and the effective annealing dimensions of the heating unit (11) are set to a length ≤3m and a width ≤2m.

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