A bonding material transfer device

CN224844698UActive Publication Date: 2026-10-09WUHAN DR LASER TECH CORP LTD
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Patent Information

Application Number
CN202522353391.1
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-11-05
Publication Date
2026-10-09
Estimated Expiration
2035-11-05

AI Technical Summary

Technical Problem

但是采用现有的技术很难在指定焊盘上精确放置或者注入微小的键合材料,比如采用点胶机将键合材料点胶到晶圆焊盘焊接点处,其存在形成的焊点较大、均匀性差、效率低、原材料浪费等问题

Benefits of technology

[0024]本申请的有益效果是:利用激光模组发出的激光束将玻璃上转印槽内的键合材料转印至对应的待焊接点处,能够在晶圆的各待焊接点处精准注入微小的键合材料,转印精度高,且具有较高的转印效率。此外,通过移动激光模组和晶圆来使得晶圆的各待焊接点处均转印键合材料,可以提高运动精度,从而进一步提高转印精度。

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Abstract

The application provides a bonding material transfer device, which comprises a base, a laser module, a transfer module and a bearing module arranged on the base; along the Z-axis direction, the bearing module, the transfer module and the laser module are arranged from bottom to top in sequence; a wafer is fixed on the bearing module, and the wafer is provided with a plurality of to-be-welded points; a glass is fixed on the transfer module, and the side of the glass facing the bearing module is provided with a plurality of transfer grooves filled with bonding material; and the laser module emits a laser beam to transfer the bonding material in the transfer grooves to the to-be-welded points below the transfer grooves, so that the transfer precision is high, and the transfer efficiency is high.
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Description

Technical Field

[0001] This application belongs to the field of semiconductor packaging technology, specifically, it relates to a bonding material transfer device. Background Technology

[0002] Semiconductor packaging typically employs a "chip-to-chip" approach, which requires multi-contact bonding pads. However, existing technologies struggle to precisely place or inject minute bonding materials onto specific pads. For instance, using a dispensing machine to apply bonding material to the wafer pads results in larger solder joints, poor uniformity, low efficiency, and material waste. Utility Model Content

[0003] In view of this, this application provides a bonding material transfer device, including a base and a laser module, a transfer module and a carrier module disposed on the base;

[0004] Along the Z-axis, the load-bearing module, the transfer module, and the laser module are arranged sequentially from bottom to top;

[0005] A wafer is fixed on the carrier module, and the wafer has several points to be soldered.

[0006] A glass plate is fixed on the transfer module. The side of the glass plate facing the support module has several transfer grooves. The transfer grooves are filled with bonding material. The laser module emits a laser beam to transfer the bonding material in the transfer grooves to the corresponding bonding points on the wafer.

[0007] Preferably, at least two of the laser module, transfer module, and carrier module can move in the X, Y, and Z axis directions.

[0008] Preferably, it also includes a first drive module and a second drive module;

[0009] The first drive module drives the laser module to move in the X, Y, and Z axis directions, and the second drive module drives the laser module to move in the X, Y, and Z axis directions.

[0010] Preferably, the first drive module includes a first X-axis drive, a first Y-axis drive, and a first Z-axis drive. The first Y-axis drive is mounted on the base. The first X-axis drive is connected to the power output end of the first Y-axis drive. The first Z-axis drive is connected to the power output end of the first X-axis drive. The laser module is connected to the power output end of the first Z-axis drive.

[0011] The second drive module includes a second X-axis drive, a second Y-axis drive, and a second Z-axis drive. The second Y-axis drive is mounted on the base. The second X-axis drive is connected to the power output end of the second Y-axis drive. The second Z-axis drive is connected to the power output end of the second X-axis drive. The load-bearing module is connected to the power output end of the second Z-axis drive.

[0012] Preferably, the power output end of the first Z-axis drive component is connected to an adapter plate, and the laser module is mounted on the adapter plate;

[0013] A laser rangefinder is also installed on the adapter board. The laser rangefinder detects the distance between the glass and the wafer, and the second drive module adjusts the height of the wafer based on the detection results of the laser rangefinder.

[0014] Preferably, a vision positioning component is also installed on the adapter board. Several positioning points are provided on both the glass and the wafer. The position of the positioning points on the glass and the wafer is detected by the vision positioning component. The second drive module adjusts the position of the wafer according to the detection result of the vision positioning component so that the positioning points on the glass and the wafer are aligned.

[0015] Once the positioning points on the glass and wafer are aligned, each bonding point has a corresponding transfer groove. A laser beam emitted from the laser module transfers the bonding material from the transfer groove to the corresponding bonding point; or...

[0016] Once the positioning points on the glass and the wafer are aligned, a transfer groove corresponds to one of the points to be soldered. The laser module emits a laser beam to transfer the bonding material in the transfer groove that is aligned with the point to be soldered to the point to be soldered. The laser module and the carrier module are moved so that a transfer groove corresponds to another part of the points to be soldered, and the bonding material transfer of this part of the points to be soldered is completed. The above actions are repeated until all the points to be soldered on the wafer have been transferred with bonding material.

[0017] Preferably, the spacing between the glass and the wafer is 20–100 μm.

[0018] Preferably, the carrier module includes a first fixing plate and a wafer chuck arranged sequentially from bottom to top along the Z-axis;

[0019] The first fixed plate is connected to the power output end of the second Z-axis drive component. The wafer is adsorbed and fixed on the wafer suction plate. The wafer suction plate and the first fixed plate are connected by multiple first tension springs. Multiple first adjustment components are provided between the wafer suction plate and the first fixed plate to adjust the level of the wafer suction plate.

[0020] Preferably, at least three first adjusting members are provided between the wafer chuck and the first fixing plate, wherein at least one first adjusting member can move in the X-axis direction and the Y-axis direction, at least one first adjusting member can move in the X-axis direction or the Y-axis direction, and at least one first adjusting member is fixed in both the X-axis direction and the Y-axis direction.

[0021] Preferably, the transfer module includes a second fixing plate and a glass suction plate;

[0022] The second fixing plate is installed on the machine base, and the glass is adsorbed and fixed on the glass suction plate. The glass suction plate and the second fixing plate are connected by multiple second tension springs, and multiple second adjustment components are provided between the glass suction plate and the second fixing plate to adjust the level of the glass suction plate.

[0023] Preferably, at least three second adjusting members are provided between the glass suction plate and the second fixed plate, wherein at least one second adjusting member can move in the X-axis direction and the Y-axis direction, at least one second adjusting member can move in the X-axis direction or the Y-axis direction, and at least one second adjusting member is fixed in both the X-axis direction and the Y-axis direction.

[0024] The beneficial effects of this application are: by using a laser beam emitted from a laser module to transfer the bonding material in the transfer groove on the glass to the corresponding bonding points, tiny bonding materials can be precisely injected into each bonding point on the wafer, resulting in high transfer accuracy and high transfer efficiency. Furthermore, by moving the laser module and the wafer to ensure that bonding material is transferred to each bonding point on the wafer, the movement accuracy can be improved, thereby further enhancing the transfer accuracy. Attached Figure Description

[0025] To more clearly illustrate the technical solutions in the embodiments of this application or related technologies, the drawings used in the description of the embodiments or prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0026] The structures, proportions, sizes, etc., shown in the accompanying drawings are only for the purpose of assisting those skilled in the art in understanding and reading the content disclosed in the specification, and are not intended to limit the implementation conditions of this application. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportions, or adjustments to the size should still fall within the scope of the technical content disclosed in this application, provided that they do not affect the effects and purposes that this application can produce.

[0027] Figure 1 A schematic diagram of the bonding material transfer apparatus provided in this application;

[0028] Figure 2 A schematic diagram of another bonding material transfer apparatus provided in this application;

[0029] Figure 3 This is a structural schematic diagram of the load-bearing module provided in this application;

[0030] Figure 4 A structural schematic diagram of another load-bearing module provided in this application;

[0031] Figure 5 This application provides a schematic diagram of the transfer module structure;

[0032] Figure 6 This is a schematic diagram of the bonding material being transferred from glass to the wafer.

[0033] In the diagram: 1-Base; 11-Laser rangefinder; 12-Vision positioning component; 2-First drive module; 21-First X-axis drive component; 22-First Y-axis drive component; 23-First Z-axis drive component; 24-Adapter plate; 3-Second drive module; 31-Second X-axis drive component; 32-Second Y-axis drive component; 33-Second Z-axis drive component; 4-Laser module; 5-Transfer module; 51-Second fixing plate; 52-Glass suction plate; 521-Opening; 53-Second tension spring; 54-Second adjusting component; 6-Bearing module; 61-First fixing plate; 62-Wafer suction plate; 63-First tension spring; 64-First adjusting component; 7-Wafer; 8-Glass; 81-Transfer tank. Detailed Implementation

[0034] The embodiments of this application will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0035] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0036] This application provides a bonding material transfer apparatus, with reference to... Figure 1-6 It includes a base 1 and a laser module 4, a transfer module 5 and a carrier module 6 mounted on the base 1;

[0037] Along the Z-axis, the load-bearing module 6, the transfer module 5, and the laser module 4 are arranged sequentially from bottom to top.

[0038] A wafer 7 is fixed on the carrier module 6, and the wafer 7 has several solder joints (not shown in the figure);

[0039] A glass 8 is fixed on the transfer module 5. The side of the glass 8 facing the support module 6 has several transfer grooves 81. The transfer grooves 81 are filled with bonding material. The laser module 4 emits a laser beam to transfer the bonding material in the transfer grooves 81 to the corresponding bonding point on the wafer 7.

[0040] In this embodiment, the bonding material can be filled into the transfer tank 81 by scraping. Of course, other methods can also be used to fill the transfer tank 81 with bonding material, and this embodiment does not make a specific limitation. The bonding material can be micron-sized solder balls, solder paste, or metal pastes such as copper, silver, and gold.

[0041] The laser module 4 typically includes a laser, an optical system, and a scanning and focusing assembly. The laser beam emitted by the laser is shaped by the optical system and then focused by the scanning and focusing assembly before irradiating the glass. Under the action of the laser beam, the bonding material in the transfer groove 81 is transferred from the transfer groove 81 to the corresponding bonding point on the wafer 7.

[0042] The shape of the transfer groove 81 can be semi-circular, fan-shaped, U-shaped, trapezoidal, etc. This embodiment does not make specific limitations, as long as the bonding material in the transfer groove 81 can be transferred to the wafer 7 after laser irradiation.

[0043] In order to ensure that the bonding material in the transfer tank 81 can be accurately transferred to the corresponding soldering point on the wafer 7, this embodiment controls the distance between the glass 8 and the wafer 7 to be 20-100μm during the transfer process.

[0044] When the type of wafer 7 is fixed (i.e., the number and position of each solder joint on the wafer are fixed), the number of transfer grooves 81 on the glass 8 in this embodiment can be the same as the number of solder joints on the wafer 7, and each transfer groove 81 on the glass 8 corresponds one-to-one with each solder joint on the wafer 7. That is, when the glass 8 is fixed on the transfer module 5 and the wafer 7 is fixed on the support module 6, there is a transfer groove 81 directly above each solder joint on the wafer 7. By irradiating the glass 8 with the laser module 4, all the bonding material in each transfer groove 81 on the glass 8 can be transferred to the corresponding solder joint on the wafer 7. Alternatively, the laser module 4 can emit a laser beam to sequentially transfer the bonding material in each transfer groove 81 on the glass 8 to the corresponding solder joint on the wafer 7.

[0045] In order to accommodate different types of wafers 7 (the number and / or position of the solder points on different types of wafers are different), the number and position of the transfer grooves 81 on the glass 8 in this embodiment can be fixed, and at least two of the laser module 4, transfer module 5 and carrier module 6 can move in the X, Y and Z axis directions.

[0046] In a preferred embodiment, refer to Figure 1 and Figure 2 The bonding material transfer device also includes a first drive module 2 and a second drive module 3;

[0047] The first drive module 2 drives the laser module 4 to move in the X, Y, and Z axis directions, and the second drive module 3 drives the load-bearing module 6 to move in the X, Y, and Z axis directions.

[0048] The position of the laser module 4 in the Z-axis direction is adjusted by the first driving module 2 to adjust the focal depth of the laser beam emitted by the laser module 4; the position of the carrier module 6 in the Z-axis direction is adjusted by the second driving module 2 to adjust the spacing between the wafer 7 and the glass 8.

[0049] In one possible implementation, during the transfer process, the second driving module 2 drives the carrier module 6 to move in the X-axis and / or Y-axis directions, so that one of the bonding points on the wafer 7 is located below one of the transfer grooves 81 of the glass 8. The first driving module 2 drives the laser module 4 to move in the X-axis and / or Y-axis directions, so that the laser beam emitted by the laser module 4 acts on the transfer groove 81 to transfer the bonding material in the transfer groove 81 to the bonding point below. Then, the second driving module 2 again drives the carrier module 6 to move in the X-axis and / or Y-axis directions, so that another bonding point on the wafer 7 is located below another transfer groove 81 containing bonding material on the glass 8. The first driving module 2 drives the laser module 4 to move in the X-axis and / or Y-axis directions, so that the laser beam emitted by the laser module 4 acts on the transfer groove 81 to transfer the bonding material in the transfer groove 81 to the bonding point below. The above process is repeated until bonding material is transferred to every bonding point on the wafer 7.

[0050] Of course, there can also be multiple points to be soldered and multiple transfer grooves aligned. The moving laser module transfers the bonding material in each aligned transfer groove to the corresponding point to be soldered. Then the wafer is moved so that another part of the points to be soldered on the wafer is aligned with the untransferred transfer grooves on the glass for laser transfer, until bonding material is transferred at every point to be soldered on the wafer.

[0051] In this embodiment, the number of transfer grooves 81 on the glass 8 can be the same as the number of solder joints on the wafer 7. By moving the laser module 4 in conjunction with the movement of the wafer 7, the bonding material in each transfer groove 81 on the glass 8 is transferred to the corresponding solder joint. Alternatively, the number of transfer grooves 81 on the glass 8 can be less than the number of solder joints on the wafer 7. After the bonding material in each transfer groove 81 on the glass 8 is transferred to the corresponding solder joint by moving the laser module 4 in conjunction with the movement of the wafer 7, the transferred glass is removed. Then, another glass 8 filled with bonding material in another transfer groove 81 is fixed on the transfer module 5. The aforementioned actions are repeated until bonding material is transferred to every solder joint on the wafer 7. Alternatively, the number of transfer grooves 81 on the glass 8 can be greater than the number of solder points on the wafer 7. After each solder point on the wafer 7 has been transferred with bonding material, the wafer 7 after the transfer is completed is removed, and another wafer 7 to be transferred is fixed on the carrier module 6. The aforementioned actions are repeated so that each solder point on the wafer 7 is also transferred with bonding material.

[0052] In this embodiment, the transfer of the transfer groove 81 to the bonding point is achieved by moving the laser module 4 and the wafer 7. During this process, the position of the glass 8 remains unchanged, which has high motion accuracy and improves the transfer accuracy of the bonding material.

[0053] In one specific implementation, reference Figure 2 The first drive module 2 includes a first X-axis drive 21, a first Y-axis drive 22, and a first Z-axis drive 23. The first Y-axis drive 22 is mounted on the base 1. The first X-axis drive 21 is connected to the power output end of the first Y-axis drive 22. The first Z-axis drive 23 is connected to the power output end of the first X-axis drive 21. The laser module 4 is connected to the power output end of the first Z-axis drive 23.

[0054] The first X-axis drive unit 21 is connected to the power output end of the first Y-axis drive unit 22. The first Y-axis drive unit 22 drives the first X-axis drive unit 21 to move in the Y-axis direction, adjusting the position of the laser module 4 in the Y-axis direction. The first Z-axis drive unit 23 is connected to the power output end of the first X-axis drive unit 21. The first X-axis drive unit 23 drives the first Z-axis drive unit 23 to move in the X-axis direction, adjusting the position of the laser module 4 in the X-axis direction. The laser module 4 is connected to the power output end of the first Z-axis drive unit 23. The first Z-axis drive unit 23 adjusts the height of the laser module 4, thereby adjusting the depth of focus of the laser. By adjusting the positions of the laser module 4 in the X-axis and Y-axis directions using the first X-axis drive unit 21 and the first Y-axis drive unit 22, the position of the laser beam acting on the glass is changed. Combined with the movement of the wafer 7, the bonding material in each transfer groove 81 on the glass 8 is transferred to the corresponding bonding point on the wafer 7.

[0055] In a further preferred embodiment, the power output end of the first Z-axis drive unit 23 is connected to an adapter plate 24, the laser module 4 is mounted on the adapter plate 24, and the adapter plate 24 is also equipped with a laser rangefinder 11 and a visual positioning unit 12.

[0056] The first X-axis drive unit 21, the first Y-axis drive unit 22, and the first Z-axis drive unit 23 can drive the adapter plate 24 to move in the X-axis, Y-axis, and Z-axis directions, thereby adjusting the positions of the laser module 4, the laser rangefinder 11, and the visual positioning unit 12 in the X-axis, Y-axis, and Z-axis directions.

[0057] The distance between the glass 8 and the wafer 7 can be detected by the laser rangefinder 11. The second drive module 3 adjusts the height of the wafer 7 according to the detection result of the laser rangefinder 11 so that the distance between the glass 8 and the wafer 7 is 20 to 100 μm.

[0058] Furthermore, both the glass 8 and the wafer 7 are provided with several positioning points (not shown in the figure). The position of the positioning points on the glass 8 and the wafer 7 is detected by the vision positioning device 12. The second drive module 3 adjusts the position of the wafer 7 according to the detection result of the vision positioning device 12, that is, adjusts the position of the wafer 7 in the X-axis direction and the Y-axis direction, so that the positioning points on the glass 8 and the wafer 7 are aligned. This allows the laser module 4 and the wafer 7 to be moved according to the vision detection result to accurately transfer the bonding material in each transfer groove 81 on the glass 8 to the corresponding welding point.

[0059] Specifically, if the bonding material transfer apparatus of this application embodiment is used to produce wafers of the same type, after the positioning points on the glass 8 and the wafer 7 are aligned, each bonding point has a corresponding transfer groove 81. The laser module 4 emits a laser beam to transfer the bonding material in each transfer groove 81 to the corresponding bonding point. That is, after the positioning points on the glass and the wafer are aligned, each bonding point has a transfer groove. The laser module only needs to emit a laser beam to transfer the bonding material in the transfer groove to the bonding point, without needing to move the wafer multiple times.

[0060] If the bonding material in this embodiment needs to be suitable for producing different types of wafers, after the positioning points on the glass 8 and the wafer 7 are aligned, a transfer groove 81 is correspondingly located above a portion of the points to be soldered. The laser module 4 emits a laser beam to transfer the bonding material in the transfer groove 81 that is aligned with the points to be soldered to the points to be soldered. The laser module 4 and the carrier module 6 are moved so that a transfer groove 81 is correspondingly located above another portion of the points to be soldered, and the bonding material transfer of this portion of the points to be soldered is completed. The aforementioned actions are repeated until all the points to be soldered on the wafer 7 are transferred with bonding material. In other words, after the positioning points on the glass and the wafer are aligned, only a portion of the bonding points to be soldered are aligned with the transfer groove. The laser module emits a laser beam to transfer the bonding material in this portion of the transfer groove to the bonding points. Then, based on the visual inspection results, the laser module and the wafer are moved so that the other portion of the bonding points without bond material transfer are aligned with the transfer groove containing bond material. The laser module then emits a laser beam to transfer the bond material in this portion of the transfer groove to the bonding points. This process is repeated until all the bonding points on the wafer are coated with bond material. This process requires multiple movements of the wafer and the laser module to ensure that all the bonding points on the wafer are coated with bond material.

[0061] Continue to refer to Figure 2 The second drive module 3 includes a second X-axis drive 31, a second Y-axis drive 32, and a second Z-axis drive 33. The second Y-axis drive 32 is mounted on the base 1. The second X-axis drive 31 is connected to the power output end of the second Y-axis drive 32. The second Z-axis drive 33 is connected to the power output end of the second X-axis drive 31. The bearing module 6 is connected to the power output end of the second Z-axis drive 33.

[0062] The second X-axis drive unit 31 is connected to the power output end of the second Y-axis drive unit 32. The second X-axis drive unit 31 is driven by the second Y-axis drive unit 32 to move in the Y-axis direction, thereby adjusting the position of the bearing module 6 in the Y-axis direction. The second Z-axis drive unit 33 is connected to the power output end of the second X-axis drive unit 31. The second Z-axis drive unit 33 is driven by the second X-axis drive unit 31 to move in the X-axis direction, thereby adjusting the position of the bearing module 6 in the X-axis direction. The bearing module 6 is connected to the power output end of the second Z-axis drive unit 33. The height of the bearing module 6 is adjusted by the second Z-axis drive unit 33.

[0063] More specifically, the laser rangefinder 11 detects the distance between the glass 8 and the wafer 7, and the second Z-axis drive 33 adjusts the height of the wafer 7 according to the detection result of the laser rangefinder 11, so that the distance between the glass 8 and the wafer 7 is 20 to 100 μm.

[0064] The vision positioning device 12 detects the positions of the positioning points on the glass 8 and the wafer 7. Based on the detection results of the vision positioning device 12, the second X-axis drive device 31 drives the wafer 7 to move in the X-axis direction, and / or the second Y-axis drive device 32 drives the wafer 7 to move in the Y-axis direction, thereby adjusting the position of the wafer 7 in the X-axis direction and the Y-axis direction, so that the positioning points on the wafer 7 and the glass 8 are aligned.

[0065] It is understandable that the position of the transfer module 5 is fixed, that is, the position of the glass 8 in the X-axis, Y-axis and Z-axis directions is fixed. The precise transfer of bonding materials is achieved by adjusting the position of the laser module 4 and the wafer 7, with high motion precision.

[0066] Specifically, before activating the laser module 4, the first Z-axis drive 23 is activated to adjust the height of the laser module 4 to adjust the laser focal depth (which can be adjusted according to the actual situation); the laser rangefinder 11 is activated to detect the distance between the wafer 7 and the glass 8, and the second Z-axis drive 33 adjusts the height of the wafer 7 according to the detection result, thereby adjusting the distance between the wafer 7 and the glass 8; the vision positioning device 12 is activated to detect the position of the positioning points on the glass 8 and the wafer 7, and the second X-axis drive 31 and the second Y-axis drive 32 adjust the position of the wafer 7 in the X-axis and Y-axis directions according to the detection result, so that the positioning points on the glass 8 and the wafer 7 are aligned. At this time, at least one transfer groove 81 is on the same straight line as the point to be soldered in the Z-axis direction; the first X-axis drive 21 and the first Y-axis drive 22 are activated to adjust the position of the laser module 4 in the X-axis and Y-axis directions, so that the laser beam emitted by the laser module 4 can act on at least one of the transfer grooves 81, and there is a point to be soldered below the transfer groove 81. After the positions of laser module 4 and wafer 7 are adjusted, laser module 4 is then started to perform laser transfer.

[0067] refer to Figure 3-4 The support module 6 includes a first fixing plate 61 and a wafer chuck 62 arranged sequentially from bottom to top along the Z-axis.

[0068] The first fixing plate 61 is connected to the power output end of the second Z-axis drive component 33. The wafer 7 is adsorbed and fixed on the wafer suction plate 62. The wafer suction plate 62 and the first fixing plate 61 are connected by multiple first tension springs 63. Multiple first adjustment components 64 are provided between the wafer suction plate 62 and the first fixing plate 61 to adjust the level of the wafer suction plate 62.

[0069] Specifically, the position of the first fixing plate 61 is fixed, and the level of the wafer 7 adsorbed and fixed on the wafer 62 is adjusted by adjusting the level of the wafer suction plate 62.

[0070] In one possible implementation, the wafer suction plate 62 has an adsorption cavity, and the upper surface of the wafer suction plate 62 has a plurality of adsorption holes communicating with the adsorption cavity. The adsorption cavity is connected to an external vacuum generator. The vacuum generator generates negative pressure in each adsorption hole to adsorb and fix the wafer 7 on the wafer suction plate 62, preventing the wafer position from shifting during the laser transfer process.

[0071] In a preferred embodiment, the number of first adjusting members 64 between the wafer chuck 62 and the first fixing plate 61 is three or more. More preferably, as... Figure 4 As shown, three first adjusting members 64 are provided between the wafer chuck 62 and the first fixing plate 61, and are evenly distributed on the wafer chuck 62.

[0072] In one specific embodiment, each of the first adjusting members 64 is provided with a first tension spring 63 on both sides. The first tension spring 63 can make the level adjustment of the wafer 7 more precise. One end of the first tension spring 63 is connected to the first fixing plate 61, and the other end is connected to the wafer suction plate 62.

[0073] This embodiment does not specifically limit the structure of the first adjusting member 64. For example, the first adjusting member can be an adjusting rivet nut.

[0074] Furthermore, at least one first adjusting member 64 is movable in both the X-axis and Y-axis directions, at least one first adjusting member 64 is movable in either the X-axis or Y-axis direction, and at least one first adjusting member 64 is fixed in both the X-axis and Y-axis directions.

[0075] When three first adjusting members 64 are provided between the wafer chuck 62 and the first fixed plate 61, during the process of adjusting the level of the wafer chuck 62 by rotating the first adjusting member 64, one of the first adjusting members 64 can move in the X-axis and Y-axis directions, one of the first adjusting members 64 can move in either the X-axis or Y-axis direction, and the remaining first adjusting member 64 cannot move in either the X-axis or Y-axis direction, so as to prevent over-constraint during the adjustment of the level of the wafer chuck 62 and affect the accuracy of the level adjustment of the wafer chuck.

[0076] refer to Figure 5 The transfer module 5 includes a second fixing plate 51 and a glass suction plate 52;

[0077] The second fixing plate 51 is installed on the base 1, and the glass 8 is adsorbed and fixed on the glass suction plate 52. The glass suction plate 52 and the second fixing plate 51 are connected by multiple second tension springs 53, and multiple second adjusting members 54 are provided between the glass suction plate 52 and the second fixing plate 51 to adjust the level of the glass suction plate 52.

[0078] Specifically, the position of the second fixing plate 51 is fixed, and the level of the glass 8 adsorbed and fixed on the glass suction plate 52 is adjusted by adjusting the level of the glass suction plate 52.

[0079] In one possible implementation, the Bernoulli adsorption principle can be used to adsorb and fix the side of the glass 8 without the transfer groove 81 onto the lower surface of the glass suction plate 52, so that the transfer groove 81 faces the upper surface of the wafer 7. The glass suction plate 52 has an opening 521 corresponding to the area of ​​the glass 8 with the transfer groove 81, so that the laser beam can pass through the opening 521 and act on the glass 8 to transfer the bonding material in the transfer groove 81 onto the wafer 7. Alternatively, as with the aforementioned wafer suction plate, vacuum adsorption can be used to adsorb and fix the side of the glass without the transfer groove onto the lower surface of the glass suction plate.

[0080] In a preferred embodiment, the number of second adjusting members 54 between the glass suction plate 52 and the second fixing plate 51 is three or more. More preferably, as... Figure 5 As shown, three second adjusting members 54 are provided between the glass suction plate 52 and the second fixing plate 51. The three second adjusting members 54 are distributed in an isosceles triangle on the glass suction plate 52.

[0081] In one specific embodiment, each of the second adjusting members 54 is provided with a second tension spring 53 on both sides. The second tension spring 53 can make the level adjustment of the glass 8 more precise. One end of the second tension spring 53 is connected to the second fixing plate 51, and the other end is connected to the glass suction plate 52.

[0082] This embodiment does not specifically limit the structure of the second adjusting member 54. For example, the second adjusting member can be an adjusting pull stud nut.

[0083] Furthermore, at least one second adjusting member 54 is movable in both the X-axis and Y-axis directions, at least one second adjusting member 54 is movable in either the X-axis or Y-axis direction, and at least one second adjusting member 54 is fixed in both the X-axis and Y-axis directions.

[0084] When three second adjusting members 54 are provided between the glass suction plate 52 and the first fixed plate 51, during the process of adjusting the level of the glass suction plate 52 by rotating the second adjusting members 54, one of the second adjusting members 54 can move in the X-axis direction and the Y-axis direction, one of the second adjusting members 54 can move in the X-axis direction or the Y-axis direction, and the remaining second adjusting member 54 cannot move in the X-axis direction or the Y-axis direction, so as to prevent over-constraint during the adjustment of the level of the glass suction plate 52 and affect the accuracy of the level adjustment of the glass suction plate.

[0085] In this embodiment, after the level of the glass suction plate and the wafer suction plate is adjusted, the height of the wafer suction plate can be adjusted according to the test results of the laser rangefinder to ensure that the distance between the wafer and the glass is maintained at 20-100μm.

[0086] The various embodiments in this specification are described in a progressive, parallel, or combined manner. Each embodiment focuses on its differences from other embodiments, and similar or identical parts between embodiments can be referred to interchangeably. For the apparatuses disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the descriptions are relatively simple, and relevant parts can be referred to the method section.

[0087] It should be noted that, in the description of this application, the terms "upper," "lower," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. When a component is considered to be "connected" to another component, it can be directly connected to the other component or there may be a component centrally located at the same time.

[0088] It should also be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that an article or apparatus comprising a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such an article or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the article or apparatus that includes the aforementioned element.

[0089] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A bonding material transfer device, characterized in that, This includes the base and the laser module, transfer module, and carrier module mounted on the base; Along the Z-axis, the load-bearing module, the transfer module, and the laser module are arranged sequentially from bottom to top; A wafer is fixed on the carrier module, and the wafer has several points to be soldered. A glass plate is fixed on the transfer module. The side of the glass plate facing the support module has several transfer grooves. The transfer grooves are filled with bonding material. The laser module emits a laser beam to transfer the bonding material in the transfer grooves to the corresponding bonding points on the wafer.

2. The bonding material transfer apparatus according to claim 1, characterized in that, At least two of the laser module, transfer module, and carrier module can move in the X, Y, and Z axis directions.

3. The bonding material transfer apparatus according to claim 2, characterized in that, It also includes a first drive module and a second drive module; The first driving module drives the laser module to move in the X, Y, and Z axis directions, and the second driving module drives the carrier module to move in the X, Y, and Z axis directions.

4. The bonding material transfer apparatus according to claim 3, characterized in that, The first drive module includes a first X-axis drive, a first Y-axis drive, and a first Z-axis drive. The first Y-axis drive is mounted on the base. The first X-axis drive is connected to the power output end of the first Y-axis drive. The first Z-axis drive is connected to the power output end of the first X-axis drive. The laser module is connected to the power output end of the first Z-axis drive. The second drive module includes a second X-axis drive, a second Y-axis drive, and a second Z-axis drive. The second Y-axis drive is mounted on the base. The second X-axis drive is connected to the power output end of the second Y-axis drive. The second Z-axis drive is connected to the power output end of the second X-axis drive. The load-bearing module is connected to the power output end of the second Z-axis drive.

5. The bonding material transfer apparatus according to claim 4, characterized in that, The power output end of the first Z-axis drive is connected to an adapter plate, and the laser module is mounted on the adapter plate. A laser rangefinder is also installed on the adapter board. The laser rangefinder detects the distance between the glass and the wafer, and the second drive module adjusts the height of the wafer based on the detection results of the laser rangefinder.

6. The bonding material transfer apparatus according to claim 5, characterized in that, The adapter board is also equipped with a vision positioning device. Several positioning points are provided on both the glass and the wafer. The position of the positioning points on the glass and the wafer is detected by the vision positioning device. The second drive module adjusts the position of the wafer according to the detection result of the vision positioning device so that the positioning points on the glass and the wafer are aligned. Once the positioning points on the glass and wafer are aligned, each bonding point has a corresponding transfer groove. A laser beam emitted from the laser module transfers the bonding material from the transfer groove to the corresponding bonding point; or... Once the positioning points on the glass and the wafer are aligned, a transfer groove corresponds to one of the points to be soldered. The laser module emits a laser beam to transfer the bonding material in the transfer groove that is aligned with the point to be soldered to the point to be soldered. The laser module and the carrier module are moved so that a transfer groove corresponds to another part of the points to be soldered, and the bonding material transfer of this part of the points to be soldered is completed. The above actions are repeated until all the points to be soldered on the wafer have been transferred with bonding material.

7. The bonding material transfer apparatus according to claim 1, characterized in that, The spacing between the glass and the wafer is 20–100 μm.

8. The bonding material transfer apparatus according to claim 4, characterized in that, The support module includes a first fixing plate and a wafer chuck arranged sequentially from bottom to top along the Z-axis; The first fixed plate is connected to the power output end of the second Z-axis drive component. The wafer is adsorbed and fixed on the wafer suction plate. The wafer suction plate and the first fixed plate are connected by multiple first tension springs. Multiple first adjustment components are provided between the wafer suction plate and the first fixed plate to adjust the level of the wafer suction plate.

9. The bonding material transfer apparatus according to claim 8, characterized in that, At least three first adjusting members are provided between the wafer chuck and the first fixing plate, wherein at least one first adjusting member can move in the X-axis direction and the Y-axis direction, at least one first adjusting member can move in the X-axis direction or the Y-axis direction, and at least one first adjusting member is fixed in both the X-axis direction and the Y-axis direction.

10. The bonding material transfer apparatus according to any one of claims 1-9, characterized in that, The transfer module includes a second fixing plate and a glass suction plate; The second fixing plate is installed on the machine base, and the glass is adsorbed and fixed on the glass suction plate. The glass suction plate and the second fixing plate are connected by multiple second tension springs, and multiple second adjustment components are provided between the glass suction plate and the second fixing plate to adjust the level of the glass suction plate.

11. The bonding material transfer apparatus according to claim 10, characterized in that, At least three second adjusting members are provided between the glass suction plate and the second fixed plate, wherein at least one second adjusting member can move in the X-axis direction and the Y-axis direction, at least one second adjusting member can move in the X-axis direction or the Y-axis direction, and at least one second adjusting member is fixed in both the X-axis direction and the Y-axis direction.