Power module, motor controller and motor drive system

Abstract

Embodiments of the present application provide a power module, a motor controller and a motor drive system. The power module comprises a first substrate, a second substrate, a power switching device and a filter device; the first substrate and the second substrate are oppositely and spacedly arranged, and the first substrate and the second substrate form a mounting space between the first substrate and the second substrate; a positive conductive layer is arranged on the side of the first substrate close to the second substrate, and a negative conductive layer is arranged on the side of the second substrate close to the first substrate; the power switching device is located in the mounting space, and the power switching device is electrically connected with the positive conductive layer and the negative conductive layer; the filter device comprises a first capacitor, the filter device is located in the mounting space, and the positive electrode and the negative electrode of the filter device are electrically connected with the positive conductive layer and the negative conductive layer respectively; a laminated structure can be formed, the parasitic inductance is reduced, the filter device is arranged, the switching speed of the power switching device is improved, the switching loss of the power switching device is reduced, and the power density of the power module is improved.

Description

Technical Field

[0001] This application relates to the field of motor drive technology, and in particular to a power module, a motor controller and a motor drive system. Background Technology

[0002] With the rapid development of power electronics technology, power modules are widely used in electric vehicles, wind power generation, industrial frequency converters, and other fields. However, the performance of power modules still faces many challenges. Among them, high parasitic inductance is one of the core issues restricting its performance improvement. Parasitic inductance generates significant voltage spikes during the switching process of the power module, greatly increasing the voltage stress during this period. This not only easily leads to breakdown and damage of the power module and shortens its service life, but also increases switching losses, reduces the module's energy conversion efficiency, and causes strong electromagnetic interference, affecting the stable operation of the entire system.

[0003] In the relevant design, based on the planar layout, the parasitic inductance in the line is reduced by decreasing the loop area formed by the connection of power switching devices.

[0004] However, even with this approach, the parasitic inductance of the power module remains high, and the overall size of the power module is relatively large, which is not conducive to the miniaturization and integration of the system. Therefore, this application proposes a power module, a motor controller, and a motor drive system. Utility Model Content

[0005] This application provides a power module, a motor controller, and a motor drive system to solve the technical problems of high parasitic inductance and large overall size of the power module.

[0006] In a first aspect, embodiments of this application provide a power module, including a first substrate, a second substrate, at least one power switching device, and at least one filter device;

[0007] The first substrate and the second substrate are disposed opposite to each other and spaced apart, and the first substrate and the second substrate form a mounting space between the first substrate and the second substrate.

[0008] A positive conductive layer is provided on the side of the first substrate closer to the second substrate, and a negative conductive layer is provided on the side of the second substrate closer to the first substrate.

[0009] The power switching device is located within the installation space and is electrically connected to both the positive and negative conductive layers.

[0010] The filter device includes a first capacitor, is located within the mounting space, and has its positive and negative terminals electrically connected to the positive and negative conductive layers, respectively.

[0011] In one possible implementation, the filter device further includes a first resistor, which is connected in series with a first capacitor.

[0012] In one possible implementation, the first capacitor and the first resistor are separately configured, with the first capacitor being a surface-mount capacitor and the first resistor being a surface-mount resistor.

[0013] In one possible implementation, the first capacitor and the first resistor are integrated, and the filtering device is a surface-mount resistor and capacitor.

[0014] In one possible implementation, the filtering device is a surface-mount capacitor, and the positive and negative terminals of the surface-mount capacitor are electrically connected to the positive and negative conductive layers, respectively.

[0015] In one possible implementation, the first substrate and the second substrate are arranged opposite to and spaced apart in the height direction of the power module;

[0016] Along the height direction of the power module, the distance between the first substrate and the second substrate is a first distance L1, where L1 ≤ 1 mm, and the thickness of the power switching device is a first thickness H1, where H1 ≤ L1.

[0017] In one possible implementation, the capacitance value of the first capacitor is ≥1μF.

[0018] In one possible implementation, it also includes:

[0019] Three half-bridges, each half-bridge including two power switching devices connected in series, the half-bridges are located between the first substrate and the second substrate, and the positive and negative terminals of the half-bridges are electrically connected to the positive conductive layer and the negative conductive layer, respectively.

[0020] Each half-bridge has a filter device connected in parallel.

[0021] In one possible implementation, the two power switching devices in the half-bridge are the upper bridge arm switch and the lower bridge arm switch, respectively.

[0022] The high-potential terminal of the upper bridge arm switch is electrically connected to the positive conductive layer, the low-potential terminal of the upper bridge arm switch is electrically connected to the high-potential terminal of the lower bridge arm switch, and the low-potential terminal of the lower bridge arm switch is electrically connected to the negative conductive layer.

[0023] In one possible implementation, it further includes a first connector and a second connector; an intermediate conductive layer is provided on the side of the first substrate near the second substrate, and the intermediate conductive layer is isolated from the positive electrode conductive layer;

[0024] The intermediate conductive layer is electrically connected to the low-potential terminal of the upper bridge arm switch through the first connector;

[0025] The intermediate conductive layer is electrically connected to the high-potential terminal of the lower bridge arm switch;

[0026] The second connector electrically connects the low-potential terminal of the lower bridge arm switch to the negative conductive layer.

[0027] In one possible implementation, the first connector is a copper clip, and the second connector is a conductive post.

[0028] In one possible implementation, the power switching device is an IGBT or a MOS.

[0029] In one possible implementation, a heat sink is also included, which is connected to the side of the first substrate or the second substrate away from the mounting space.

[0030] The heat sink includes a connecting plate and a heat sink plate. The connecting plate is used to connect to the first substrate or the second substrate, and the heat sink plate is connected to the connecting plate.

[0031] The heat sink extends along the height direction of the power module. There are multiple heat sinks, which are parallel and spaced apart along a first direction, which is perpendicular to the height direction of the power module.

[0032] Secondly, embodiments of this application provide a motor controller, including a bus capacitor and the aforementioned power module;

[0033] The bus capacitor is located outside the installation space. The positive terminal of the bus capacitor is electrically connected to the positive conductive layer of the power module, and the negative terminal of the bus capacitor is electrically connected to the negative conductive layer of the power module.

[0034] Secondly, embodiments of this application provide a motor drive system, including a motor and the aforementioned motor controller;

[0035] The three half-bridge outputs of the motor controller are respectively connected to the three windings of the motor.

[0036] The power module, motor controller, and motor drive system provided in this application embodiment can form a stacked structure by setting a first substrate and a second substrate opposite to each other and spaced apart. A current path can be formed between the first substrate and the second substrate. Compared with the existing planar layout, the positive electrode conductive layer and the negative electrode conductive layer are closer together, which can shorten the current path length and reduce the current loop area. Moreover, the current directions in the positive electrode conductive layer and the negative electrode conductive layer are opposite, so that the generated magnetic fields cancel each other out, which can reduce parasitic inductance. A filter device is provided between the first substrate and the second substrate. The filter device includes a first capacitor. The first capacitor can absorb the peak voltage caused by the external parasitic inductance of the power module, which can improve the switching speed of the power switching device, reduce the switching loss of the power switching device, and improve the power density of the power module. Attached Figure Description

[0037] To more clearly illustrate the implementation methods in the embodiments of this application or related technologies, the accompanying drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings.

[0038] Figure 1 This is a schematic diagram of the structure of a power module according to an embodiment of this application;

[0039] Figure 2 This is another structural schematic diagram of a power module according to an embodiment of this application;

[0040] Figure 3 This is another structural schematic diagram of a power module according to an embodiment of this application;

[0041] Figure 4 This is a circuit diagram of a power module according to an embodiment of this application;

[0042] Figure 5 This is another circuit diagram of a power module according to an embodiment of this application;

[0043] Figure 6 This is a partial circuit diagram of a motor drive system according to an embodiment of this application;

[0044] Figure 7 This is another partial circuit diagram of a motor drive system according to an embodiment of this application.

[0045] Explanation of reference numerals in the attached figures:

[0046] 10-Power Module;

[0047] 1-First substrate;

[0048] P - Positive conductive layer; 12 - First insulating plate; 13 - Intermediate conductive layer;

[0049] 2-Second substrate;

[0050] N-Negative conductive layer; 22-Second insulating plate;

[0051] 3- Installation space;

[0052] 4-Half-bridge;

[0053] 41-Power switching device; 411-Upper bridge arm switch; 412-Lower bridge arm switch;

[0054] D-diode;

[0055] M - Half-bridge output;

[0056] 43 - First connector;

[0057] 44 - Second connector;

[0058] 5-Filtering devices;

[0059] C1 - First capacitor; R1 - First resistor;

[0060] 6-Heat dissipation components;

[0061] 61-Connecting plate; 62-Heat dissipation plate;

[0062] C2 - Bus capacitor;

[0063] 100-Motor Controller;

[0064] 200-Motor. Detailed Implementation

[0065] To make the objectives, implementation methods and advantages of this application clearer, the exemplary implementation methods of this application will be clearly and completely described below with reference to the accompanying drawings of the exemplary embodiments of this application. Obviously, the described exemplary embodiments are only some embodiments of this application, and not all embodiments.

[0066] It should be noted that the brief descriptions of terms in this application are only for the convenience of understanding the embodiments described below, and are not intended to limit the embodiments of this application. Unless otherwise stated, these terms should be understood in their ordinary and common meaning.

[0067] Furthermore, the terms “comprising” and “having”, and any variations thereof, are intended to cover but not exclusively include, for example, a product or device that includes a series of components is not necessarily limited to those that are explicitly listed, but may include other components that are not explicitly listed or that are inherent to such product or device.

[0068] In the description of this application, it should be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0069] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more.

[0070] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0071] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0072] With the rapid development of power electronics technology, power modules are widely used in electric vehicles, wind power generation, industrial frequency converters, and other fields. However, the performance of power modules still faces many challenges, especially in high-frequency, high-power applications. Power modules generate high parasitic inductance, which can cause overvoltage breakdown of power switching devices and lead to high switching losses, reducing the power density of the power module.

[0073] In related designs, the power switching devices and other structures of the power module are usually distributed on the same plane, resulting in a large loop area. Parasitic inductance is usually reduced by optimizing the layout of the power switching devices and other structures. However, due to the limitations of the planar layout, the loop area is difficult to reduce further after it has been reduced to a certain extent. As a result, the parasitic inductance is difficult to reduce further after it has been reduced to a certain extent, and the parasitic inductance of the power module remains high. In addition, the overall size of the power module is large.

[0074] To address the aforementioned technical problems, this application proposes a power module 10, a motor controller 100, and a motor drive system 300. The power module 10 includes a first substrate, a second substrate, at least one power switching device, and at least one filter device. A first substrate and a second substrate are disposed opposite to each other and spaced apart, forming a mounting space between the first substrate and the second substrate. A positive conductive layer is provided on the side of the first substrate near the second substrate, and a negative conductive layer is provided on the side of the second substrate near the first substrate. A power switching device is located in the mounting space and is electrically connected to both the positive and negative conductive layers. A filter device includes a first capacitor, is located in the mounting space, and its positive and negative terminals are electrically connected to the positive and negative conductive layers, respectively. A stacked structure can be formed, and a current path can be formed between the first substrate and the second substrate. Compared with the existing planar layout, the positive and negative conductive layers are closer together, which can shorten the current path length and reduce the current loop area. Furthermore, the current directions in the positive and negative conductive layers are opposite, causing the generated magnetic fields to cancel each other out, which can reduce parasitic inductance. A filter device is provided between the first substrate and the second substrate. The filter device includes a first capacitor, which can absorb the peak voltage caused by the external parasitic inductance of the power module, improve the switching speed of the power switching device, reduce the switching loss of the power switching device, and improve the power density of the power module.

[0075] The power module 10, motor controller 100, and motor drive system 300 proposed in this application will be described in detail below with reference to the accompanying drawings.

[0076] refer to Figure 1 The power module 10 includes a first substrate 1 and a second substrate 2. The first substrate 1 and the second substrate 2 are disposed opposite to each other and spaced apart. The first substrate 1 and the second substrate 2 form a mounting space 3 located between the first substrate 1 and the second substrate 2.

[0077] refer to Figure 1 The first substrate 1 has a positive conductive layer P on the side closest to the second substrate 2. The second substrate 2 has a negative conductive layer N on the side closest to the first substrate 1.

[0078] Specifically, the first substrate 1 includes a first insulating plate 12. A positive conductive layer P is connected to the side of the first insulating plate 12 closest to the second substrate 2. The positive conductive layer P is made of copper. The positive conductive layer P can be a copper foil or a copper layer.

[0079] Specifically, the second substrate 2 includes a second insulating plate 22. A negative conductive layer N is connected to the side of the second insulating plate 22 closest to the first substrate 1. The negative conductive layer N is made of copper. The positive conductive layer P can be copper foil or a copper layer.

[0080] The first and second insulating plates provide fixed support for the power switching devices and filter devices.

[0081] The first insulating plate 12 and / or the second insulating plate 22 can be ceramic insulating plates. The ceramic insulating plate is connected to the copper foil by active metal brazing (AMB), or a copper layer is formed on the ceramic insulating plate using direct copper cladding (DBC) technology.

[0082] Alternatively, the first substrate 1 and / or the second substrate 2 can be flexible printed circuit boards (FPCs). Alternatively, the first substrate 1 and / or the second substrate 2 can be printed circuit boards (PCBs). Printed circuit boards generally have good mechanical strength. Substrates formed using active metal soldering (AMB) and direct copper plating (DBC) technologies have good thermal conductivity.

[0083] refer to Figure 1 The power module 10 may include a power switching device 41. The power switching device 41 is located within the mounting space 3, and is electrically connected to both the positive conductive layer P and the negative conductive layer N.

[0084] refer to Figure 1 The power module 10 also includes a filter element 5. The filter element 5 is used for filtering. The filter element 5 includes a first capacitor C1. The filter element 5 is located within the mounting space 3, and the positive and negative terminals of the filter element 5 are electrically connected to the positive conductive layer P and the negative conductive layer N, respectively. The filter element 5 is located within the mounting space 3 to prevent the current from flowing through a longer path and introducing parasitic inductance if the filter element 5 is located outside the mounting space 3.

[0085] The first substrate 1 and the second substrate 2 are arranged opposite to each other and spaced apart to form a stacked structure. A current path can be formed between the first substrate 1 and the second substrate 2. Compared with the existing planar layout, the positive conductive layer P and the negative conductive layer N are closer together, which can shorten the current path length and reduce the current loop area. Moreover, the current directions in the positive conductive layer P and the negative conductive layer N are opposite, so the generated magnetic fields cancel each other out, which can reduce parasitic inductance. A filter device 5 is provided between the first substrate 1 and the second substrate 2. The filter device 5 includes a first capacitor C1. The first capacitor C1 can absorb the peak voltage caused by the external parasitic inductance of the power module, which can improve the switching speed of the power switching device, reduce the switching loss of the power switching device, and improve the power density of the power module 10. Specifically, the parasitic inductance can be reduced to below 3nH, or even below 1nH.

[0086] By placing the filter device 5 between the positive conductive layer P and the negative conductive layer N, the problem of limited space between the positive and negative electrodes, which makes it difficult to place other devices, is solved. This allows for full utilization of the space between the positive conductive layer P and the negative conductive layer N, improving the space utilization rate between them and achieving a compact layout of the power module 10.

[0087] Specifically, the positive electrode of filter component 5 is electrically connected to the positive electrode conductive layer P by means of crimping, welding, sintering, or bonding with conductive adhesive. The negative electrode of filter component 5 is electrically connected to the negative electrode conductive layer N by means of crimping, welding, sintering, or bonding with conductive adhesive.

[0088] Among them, filter device 5 is a surface-mount capacitor. The positive and negative terminals of the surface-mount capacitor are electrically connected to the positive conductive layer P and the negative conductive layer N, respectively.

[0089] By using a surface-mount capacitor as the filter element 5, the height of the filter element 5 can be reduced, making it easier to place the filter element 5 between the positive conductive layer P and the negative conductive layer N. This allows for full utilization of the space between the positive conductive layer P and the negative conductive layer N, improving the space utilization rate and achieving a compact layout of the power module 10. It also enables a stable connection between the surface-mount capacitor and the positive conductive layer P and the negative conductive layer N. Furthermore, it reduces the distance between the first substrate 1 and the second substrate 2, shortening the current path length, reducing the current loop area, and significantly enhancing mutual inductance while reducing parasitic inductance.

[0090] Specifically, the surface mount capacitor has a first positive terminal. The first positive terminal is located on the surface of the surface mount capacitor near the positive conductive layer P. The surface mount capacitor also has a first negative terminal. The first negative terminal is located on the surface of the surface mount capacitor near the negative conductive layer N. The first positive terminal is electrically connected to the positive conductive layer P. The first negative terminal is electrically connected to the negative conductive layer N.

[0091] Specifically, the positive electrode of the first capacitor is electrically connected to the positive conductive layer P by means of pressing, welding, sintering, or bonding with conductive adhesive. The negative electrode of the first capacitor is electrically connected to the negative conductive layer N by means of pressing, welding, sintering, or bonding with conductive adhesive.

[0092] refer to Figure 2 The filter component 5 may also include a first resistor R1. The first resistor R1 and the first capacitor C1 are connected in series. The first capacitor C1 and the first resistor R1 are separately configured. The first capacitor C1 is a surface-mount capacitor, and the first resistor R1 is a surface-mount resistor. Including the first resistor R1 in the filter component 5 ensures impedance matching between the power module 10 and the load, reducing reflection losses.

[0093] The first capacitor C1 and the first resistor R1 are set separately. The first capacitor C1 is a surface-mount capacitor, and the first resistor R1 is a surface-mount resistor. This allows the filter device 5 to be smaller in height, making it easier to be located between the positive conductive layer P and the negative conductive layer N. It can make full use of the space between the positive conductive layer P and the negative conductive layer N, improve the space utilization rate between the positive conductive layer P and the negative conductive layer N, achieve a compact layout of the power module 10, and achieve a stable connection between the filter device 5 and the positive conductive layer P and the negative conductive layer N. It can also reduce the distance between the first substrate 1 and the second substrate 2, shorten the current path length, reduce the current loop area, and significantly enhance the mutual inductance and reduce parasitic inductance.

[0094] refer to Figure 2 The first resistor R1 can be located between the first capacitor C1 and the positive conductive layer P. Alternatively, the first resistor R1 can be located between the first capacitor C1 and the negative conductive layer N.

[0095] The first resistor R1 has a first connecting electrode and a second connecting electrode. The first connecting electrode can be located on the surface of the first resistor R1 near the positive conductive layer P. The second connecting electrode can be located on the surface of the first resistor R1 near the negative conductive layer N.

[0096] The surface mount capacitor has a first positive terminal. The first positive terminal is located on the surface of the surface mount capacitor near the positive conductive layer P. The surface mount capacitor also has a first negative terminal. The first negative terminal is located on the surface of the surface mount capacitor near the negative conductive layer N.

[0097] When the first resistor R1 is located between the first capacitor C1 and the positive conductive layer P, the first connecting electrode is electrically connected to the positive conductive layer P, and the second connecting electrode is electrically connected to the positive terminal of the first capacitor. The negative terminal of the first capacitor is electrically connected to the negative conductive layer N. The first connecting electrode is electrically connected to the positive conductive layer P by pressing, welding, sintering, or bonding with conductive adhesive. The negative terminal of the first capacitor is electrically connected to the negative conductive layer N by pressing, welding, sintering, or bonding with conductive adhesive.

[0098] When the first resistor R1 is located between the first capacitor C1 and the negative conductive layer N, the positive terminal of the first capacitor is electrically connected to the positive conductive layer P. The negative terminal of the first capacitor is electrically connected to the first connecting electrode, and the second connecting electrode is electrically connected to the negative conductive layer N. The positive terminal of the first capacitor is electrically connected to the positive conductive layer P by pressing, welding, sintering, or bonding with conductive adhesive. The second connecting electrode is electrically connected to the negative conductive layer N by pressing, welding, sintering, or bonding with conductive adhesive.

[0099] The first capacitor C1 and the first resistor R1 are integrated, and the filter component 5 is a surface-mount resistor and capacitor. The surface-mount resistor and capacitor has an integrated positive terminal and an integrated negative terminal. The integrated positive terminal is located on the surface of the surface-mount resistor and capacitor near the positive conductive layer P. The integrated negative terminal is located on the surface of the surface-mount resistor and capacitor near the negative conductive layer N.

[0100] The positive electrode of the integrated device is electrically connected to the positive conductive layer P. The negative electrode of the integrated device is electrically connected to the negative conductive layer N. The positive electrode of the integrated device is electrically connected to the positive conductive layer P through pressing, welding, sintering, or bonding with conductive adhesive. The negative electrode of the integrated device is electrically connected to the negative conductive layer N through pressing, welding, sintering, or bonding with conductive adhesive.

[0101] The first capacitor C1 and the first resistor R1 are integrated. The filter component 5 is a surface-mount resistor and capacitor, which makes the height of the filter component 5 smaller. It is convenient to be located between the positive conductive layer P and the negative conductive layer N. It can make full use of the space between the positive conductive layer P and the negative conductive layer N, improve the space utilization rate between the positive conductive layer P and the negative conductive layer N, and realize the compact layout of the power module 10. It can achieve a stable connection between the filter component 5 and the positive conductive layer P and the negative conductive layer N. It can also reduce the distance between the first substrate 1 and the second substrate 2, shorten the current path length, reduce the current loop area, and significantly enhance the mutual inductance and reduce parasitic inductance.

[0102] In this application, the filter component 5 can be a component consisting of surface-mount resistors and capacitors, surface-mount capacitors, and surface-mount resistors connected separately, or a surface-mount capacitor. The actual structure of the filter component 5 can be selected according to actual needs, allowing for fine adjustment of parasitic inductance and minimizing parasitic inductance. The filter component 5 is located on one side of the control signal line of the power switching device 41 to avoid crossing and reduce parasitic inductance.

[0103] The integrated form of the first resistor R1 and the first capacitor C1 results in a very short internal connection and low parasitic inductance. Conversely, a separate form of the first resistor R1 and the first capacitor C1, limited by wiring constraints, results in higher parasitic inductance compared to the integrated form, but can be configured to absorb high-energy voltage spikes.

[0104] In some embodiments, reference Figure 1 The power module 10 has a height direction. A first substrate 1 and a second substrate 2 are disposed opposite to and spaced apart from each other in the height direction of the power module 10. The second substrate 2 may be located above the first substrate 1, or the first substrate 1 may be located above the second substrate 2.

[0105] refer to Figure 1Along the height direction of the power module 10, the distance between the first substrate 1 and the second substrate 2 is a first distance L1, where L1≤1mm. This can significantly enhance mutual inductance, reduce parasitic inductance, increase switching speed, reduce switching losses, and increase the power density of the power module 10.

[0106] refer to Figure 1 Along the height direction of the power module 10, the thickness of the power switch device 41 is a first thickness H1, where H1 ≤ L1, allowing the power switch device 41 to be placed between the first substrate 1 and the second substrate 2, ensuring good connection between the power switch device 41 and the positive conductive layer P and the negative conductive layer N. The power switch device 41 has a small overall size and good heat dissipation.

[0107] The thickness H1 of the power switch device 41 in the height direction of the power module 10 can be any value between 150µm and 200µm, so that the power switch device 41 can be placed between the first substrate 1 and the second substrate 2.

[0108] In some embodiments, the capacitance value of the first capacitor C1 is ≥1μF, which enables the first capacitor C1 to have a certain ability to absorb peak voltage, avoid the first capacitor C1 from being broken down, avoid the formation of a circuit that causes a sudden rise in current and thus increases parasitic inductance, and avoid overcurrent and overvoltage of the power switching device. The larger the capacitance value of the first capacitor C1, the stronger the ability of the first capacitor to absorb peak voltage, and the more stable the power module 10.

[0109] In some embodiments, a plurality of filter elements 5 are provided between the positive conductive layer P and the negative conductive layer N. The plurality of filter elements 5 are arranged in parallel and dispersed, which can shorten the current loop path and further reduce parasitic inductance.

[0110] In some embodiments, reference Figure 4 and Figure 5 The power switching device 41 can be an IGBT (Insulated Gate Bipolar Transistor) or a MOS (Metal Oxide Semiconductor). The MOS can be a SiC MOS (Silicon Carbide Metal Oxide Semiconductor).

[0111] refer to Figure 4 and Figure 5The power module 10 may include three half-bridges 4. Each half-bridge 4 includes two power switching devices 41 connected in series. The half-bridge 4 is located within the mounting space, and its positive terminal is electrically connected to the positive conductive layer P. The negative terminal of the half-bridge 4 is electrically connected to the negative conductive layer N. A filter device 5 is connected in parallel to each half-bridge 4. A diode D is connected in parallel to each power switching device 41 of the half-bridge 4. The diode can be a fast recovery diode.

[0112] refer to Figure 4 and Figure 5 In the half-bridge 4, the two power switching devices 41 are the upper bridge arm switch 411 and the lower bridge arm switch 412. The high-potential terminal of the upper bridge arm switch 411 is electrically connected to the positive conductive layer P. The low-potential terminal of the upper bridge arm switch 411 is electrically connected to the high-potential terminal of the lower bridge arm switch 412. The low-potential terminal of the lower bridge arm switch 412 is electrically connected to the negative conductive layer N. The half-bridge output terminal M is located between the low-potential terminal of the upper bridge arm switch 411 and the high-potential terminal of the lower bridge arm switch 412.

[0113] Specifically, the high-potential terminal of the upper bridge arm switch 411 is electrically connected to the positive conductive layer P by welding or sintering. The low-potential terminal of the lower bridge arm switch 412 is electrically connected to the negative conductive layer N by welding or sintering.

[0114] Specifically, when both the upper bridge arm switch 411 and the lower bridge arm switch 412 are MOSFETs, the drain D of the upper bridge arm switch 411 is electrically connected to the positive conductive layer P. The source S of the upper bridge arm switch 411 is electrically connected to the drain D of the lower bridge arm switch 412. The source S of the lower bridge arm switch 412 is electrically connected to the negative conductive layer N. The half-bridge output terminal M is located between the source S of the upper bridge arm switch 411 and the drain D of the lower bridge arm switch 412.

[0115] Specifically, the drain D of the upper bridge arm switch 411 is electrically connected to the positive conductive layer P by welding or sintering. The source S of the lower bridge arm switch 412 is electrically connected to the negative conductive layer N by welding or sintering.

[0116] Specifically, when both the upper bridge arm switch 411 and the lower bridge arm switch 412 are IGBTs, the collector C of the upper bridge arm switch 411 is electrically connected to the positive conductive layer P. The emitter E of the upper bridge arm switch 411 is electrically connected to the collector C of the lower bridge arm switch 412. The emitter E of the lower bridge arm switch 412 is electrically connected to the negative conductive layer N. The half-bridge output terminal M is located between the emitter E of the upper bridge arm switch 411 and the collector C of the lower bridge arm switch 412.

[0117] Specifically, the collector C of the upper bridge arm switch 411 is electrically connected to the positive conductive layer P by welding or sintering. The emitter E of the lower bridge arm switch 412 is electrically connected to the negative conductive layer N by welding or sintering.

[0118] In some embodiments, reference Figure 1 , Figure 2 and Figure 3 The power module 10 also includes a first connector 43 for connecting the upper bridge arm switch 411 and the lower bridge arm switch 412. An intermediate conductive layer 13 is provided on the side of the first substrate 1 near the second substrate 2. The intermediate conductive layer 13 connects the upper bridge arm switch 411 and the lower bridge arm switch 412. The intermediate conductive layer 13 is located on one side of the positive conductive layer P and is isolated from the positive conductive layer P. The intermediate conductive layer 13 is electrically connected to the low-potential terminal of the upper bridge arm switch via the first connector 43. The intermediate conductive layer 13 is also electrically connected to the high-potential terminal of the lower bridge arm switch 412. The power module 10 also includes a second connector 44. The second connector 44 electrically connects the low-potential terminal of the lower bridge arm switch 412 to the negative conductive layer N.

[0119] By setting up an intermediate conductive layer, a first connector, and a second connector, the upper bridge arm switch 411 and the lower bridge arm switch 412 are arranged side by side, so that the current flows in opposite directions. This allows the magnetic fields generated by the two current flow paths to cancel each other out, thereby reducing the magnetic field strength, reducing parasitic inductance, increasing switching speed, reducing switching losses, and increasing the power density of the power module 10.

[0120] Specifically, one end of the first connector 43 is electrically connected to the low potential end of the upper bridge arm switch 411, and the other end of the first connector 43 is electrically connected to the intermediate conductive layer 13.

[0121] The first connector 43 is electrically connected to the low-potential terminal of the upper bridge arm switch 411 by welding or sintering. The first connector 43 is also electrically connected to the intermediate conductive layer 13 by welding or sintering.

[0122] The intermediate conductive layer 13 is electrically connected to the high-potential terminal of the lower bridge arm switch 412 by welding or sintering. The first connector 43 is a copper clip.

[0123] The second connector 44 is electrically connected to the low-potential terminal of the lower bridge arm switch 412. The second connector 44 is electrically connected to the low-potential terminal of the lower bridge arm switch 412 by welding or sintering. The second connector 44 is also electrically connected to the negative conductive layer N by welding or sintering. The second connector 44 is a conductive post.

[0124] In some embodiments, reference Figure 3 The power module 10 also includes a heat sink 6. The heat sink 6 is used to dissipate heat for the power switching device 41 and the filter device 5, ensuring the stable operation of the power switching device 41 and the filter device 5, and extending the service life of the power switching device 41 and the filter device 5.

[0125] The heat sink 6 is connected to the side of the first substrate 1 or the second substrate 2 away from the mounting space 3. Specifically, the heat sink 6 is connected to the first substrate 1, and the heat sink 6 is located on the side of the first substrate 1 away from the mounting space 3. Alternatively, the heat sink 6 is connected to the second substrate 2, and the heat sink 6 is located on the side of the second substrate 2 away from the mounting space 3.

[0126] The heat sink 6 includes a connecting plate 61 and a heat sink 62. The connecting plate 61 is used to connect to the first substrate 1 or the second substrate 2. The heat sink 62 is connected to the connecting plate 61. The heat sink 62 extends along the height direction of the power module 10. There are multiple heat sinks 62, which are parallel and spaced apart along a first direction perpendicular to the height direction of the power module 10. Air enters between two heat sinks and exchanges heat with the heat sink 62, carrying away the heat on the heat sink 62 to achieve heat dissipation. By including multiple heat sinks 62, the heat dissipation area of ​​the heat sink 6 can be increased, improving the heat dissipation effect.

[0127] The connecting plate 61 can be welded to the first substrate 1 or the second substrate 2, which can improve the heat dissipation performance of the heat sink 6 on the power switching device 41 and the filter device 5.

[0128] In some embodiments, reference Figure 6 and Figure 7 This application also proposes a motor controller 100. The motor controller 100 includes a bus capacitor C2 and the power module 10 described above. The bus capacitor C2 is located outside the mounting space 3. The positive terminal of the bus capacitor C2 is electrically connected to the positive conductive layer P of the power module 10, and the positive terminal of the bus capacitor C2 is electrically connected to the negative conductive layer N of the power module 10.

[0129] The positive terminal of bus capacitor C2 is connected to the positive terminal DC+ of the DC power supply. The negative terminal of bus capacitor C2 is connected to the negative terminal DC- of the DC power supply. Bus capacitor C2 can absorb the peak voltage caused by the parasitic inductance between the DC power supply and the current capacitor.

[0130] In some embodiments, reference Figure 6 and Figure 7 This application also proposes a motor drive system 300. The motor drive system 300 includes a motor 200 and a motor controller 100 as described above. The three half-bridge output terminals M of the motor controller 100 are respectively connected to the three windings of the motor 200, which can reduce parasitic inductance, suppress voltage spikes, avoid accelerating the aging of the motor winding insulation layer, reduce switching waveform oscillation, and reduce motor torque pulsation and noise.

[0131] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

[0132] For ease of explanation, the above description has been provided in conjunction with specific embodiments. However, the above exemplary discussion is not intended to be exhaustive or to limit the embodiments to the specific forms disclosed above. Various modifications and variations can be obtained based on the above teachings. The selection and description of the above embodiments are for the purpose of better explaining the principles and practical applications, thereby enabling those skilled in the art to better utilize the above embodiments and various different variations of embodiments suitable for specific application considerations.

Claims

1. A power module, characterized in that, It includes a first substrate (1), a second substrate (2), at least one power switching device (41) and at least one filter device (5); The first substrate (1) and the second substrate (2) are arranged opposite to each other and spaced apart, and the first substrate (1) and the second substrate (2) form a mounting space (3) between the first substrate (1) and the second substrate (2). The first substrate (1) has a positive conductive layer (P) on the side close to the second substrate (2), and the second substrate (2) has a negative conductive layer (N) on the side close to the first substrate (1). The power switching device (41) is located in the mounting space (3), and the power switching device (41) is electrically connected to both the positive conductive layer (P) and the negative conductive layer (N); The filter device (5) includes a first capacitor (C1), the filter device (5) is located in the mounting space (3), and the positive and negative terminals of the filter device (5) are electrically connected to the positive conductive layer (P) and the negative conductive layer (N), respectively.

2. The power module according to claim 1, characterized in that, The filter device (5) further includes a first resistor (R1), which is connected in series with the first capacitor (C1).

3. The power module according to claim 2, characterized in that, The first capacitor (C1) and the first resistor (R1) are separately configured. The first capacitor (C1) is a surface mount capacitor, and the first resistor (R1) is a surface mount resistor.

4. The power module according to claim 2, characterized in that, The first capacitor (C1) and the first resistor (R1) are integrated, and the filter device (5) is a surface-mount resistor and capacitor.

5. The power module according to claim 1, characterized in that, The filter device (5) is a surface-mount capacitor, and the positive and negative terminals of the surface-mount capacitor are electrically connected to the positive conductive layer (P) and the negative conductive layer (N), respectively.

6. The power module according to any one of claims 1-5, characterized in that, The first substrate (1) and the second substrate (2) are arranged opposite to each other and spaced apart in the height direction of the power module (10); Along the height direction of the power module (10), the distance between the first substrate (1) and the second substrate (2) is a first distance L1, L1≤1mm, and the thickness of the power switching device (41) is a first thickness H1, H1≤L1.

7. The power module according to any one of claims 1-5, characterized in that, The capacitance value of the first capacitor (C1) is ≥1μF.

8. The power module according to any one of claims 1-5, characterized in that, Also includes: Three half-bridges (4), each of the half-bridges (4) includes two power switching devices (41) connected in series. The half-bridges (4) are located between the first substrate (1) and the second substrate (2), and the positive and negative terminals of the half-bridges (4) are electrically connected to the positive conductive layer (P) and the negative conductive layer (N), respectively. Each of the half-bridges (4) is connected in parallel with a filter device (5).

9. The power module according to claim 8, characterized in that, The two power switching devices (41) in the half-bridge (4) are the upper bridge arm switch (411) and the lower bridge arm switch (412). The high-potential end of the upper bridge arm switch (411) is electrically connected to the positive conductive layer (P), the low-potential end of the upper bridge arm switch (411) is electrically connected to the high-potential end of the lower bridge arm switch (412), and the low-potential end of the lower bridge arm switch (412) is electrically connected to the negative conductive layer (N).

10. The power module according to claim 9, characterized in that, It also includes a first connector (43) and a second connector (44); the first substrate (1) has an intermediate conductive layer (13) on the side near the second substrate (2), and the intermediate conductive layer (13) is isolated from the positive electrode conductive layer (P); The intermediate conductive layer (13) is electrically connected to the low potential end of the upper bridge arm switch (411) through the first connector (43); The intermediate conductive layer (13) is electrically connected to the high potential end of the lower bridge arm switch (412); The second connector (44) electrically connects the low potential terminal of the lower bridge arm switch (412) to the negative conductive layer (N).

11. The power module according to claim 10, characterized in that, The first connector (43) is a copper clip, and the second connector (44) is a conductive post.

12. The power module according to any one of claims 1-5, characterized in that, The power switching device (41) is an IGBT or a MOS.

13. The power module according to any one of claims 1-5, characterized in that, It also includes a heat sink (6), which is connected to the side of the first substrate (1) or the second substrate (2) away from the mounting space (3); The heat sink (6) includes a connecting plate (61) and a heat sink (62). The connecting plate (61) is used to connect to the first substrate (1) or the second substrate (2), and the heat sink (62) is connected to the connecting plate (61). The heat sink (62) extends along the height direction of the power module. There are multiple heat sinks (62), which are parallel and spaced apart along a first direction, which is perpendicular to the height direction of the power module.

14. A motor controller, characterized in that, Includes a bus capacitor (C2) and a power module as described in any one of claims 1-13; The bus capacitor (C2) is located outside the mounting space (3). The positive terminal of the bus capacitor (C2) is electrically connected to the positive conductive layer (P) of the power module, and the negative terminal of the bus capacitor (C2) is electrically connected to the negative conductive layer (N) of the power module.

15. A motor drive system, characterized in that, Includes a motor (200) and a motor controller (100) as described in claim 14; The three half-bridge output terminals (M) of the motor controller (100) are respectively connected to the three windings of the motor (200).

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