Cosmetic instrument power amplifier circuit

CN224852268UActive Publication Date: 2026-10-13YUNQIHUI NETWORK TECH (SHENZHEN) CO LTD
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Patent Information

Application Number
CN202521062808.2
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-05-27
Publication Date
2026-10-13
Estimated Expiration
2035-05-27

AI Technical Summary

Technical Problem

[0006]本实用新型提供一种美容仪功率放大电路,有效解决了现有的功率放大电路存在效率较低的技术问题

Benefits of technology

[0017]本实用新型相较于现有技术,其有益效果为:本实用新型提供一种美容仪功率放大电路,该美容仪功率放大电路设置有控制模块。数控衰减模块可基于调节电压调节射频信号的增益,自动电平控制模块可基于控制电压调节整个电路射频信号的功率,功率放大模块可基于偏置电压对射频信号进行功率放大操作。基于输入功率检测信号、前向功率检测信号、反向功率检测信号,控制芯片可调节控制电压、调节电压、偏置电压,进而控制芯片可调整美容仪功率放大电路的输出功率。因此,即使在射频信号在传输过程中发生波动,在控制芯片的调整下,该功率放大电路依然可以稳定地输出大功率的射频信号。因而,相比于传统的功率放大电路,该美容仪功率放大电路的效率较高。该美容仪功率放大电路可有效解决现有的功率放大电路效率较低的技术问题。

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Patent Text Reader

Abstract

The utility model provides a kind of power amplifier circuit of beautifying instrument, control module output control voltage, adjustment voltage and bias voltage.Number control attenuation module receives external radio frequency signal, and attenuation of number control attenuation module is adjusted based on adjustment voltage, the gain of power amplifier module is adjusted, and automatic level control module adjusts the power of entire circuit radio frequency signal based on control voltage, transistor carries out power amplification based on bias voltage to radio frequency signal.Isolation module carries out isolation to part reflected radio frequency signal and exports radio frequency signal.Input power detection unit generates input power detection signal based on radio frequency signal, forward power detection unit generates forward power detection signal based on part radio frequency signal after power amplification, and reverse power detection unit generates reverse power detection signal based on part reflected radio frequency signal.Control module is based on input power detection signal, forward power detection signal, reverse power detection signal, adjusts the output power of power amplifier circuit.
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Description

Technical Field

[0001] This utility model relates to the field of circuit technology, and in particular to a power amplifier circuit for a beauty device. Background Technology

[0002] In modern society, plasma beauty devices are beauty tools that utilize plasma technology for skin care. Plasma is the fourth state of matter; besides solid, liquid, and gas, it forms when a gas is heated to a sufficiently high temperature or ionized under other conditions. Plasma beauty devices generate plasma and utilize its energy and properties to provide deep skin care.

[0003] In a low-frequency, high-oscillation electromagnetic wave environment of 41MHz, this electric field changes polarity more than 2 billion times per second, penetrating directly into the subcutaneous tissue. This causes the natural molecular movement of the subcutaneous tissue to generate heat energy. When the temperature reaches the critical point between 45 and 65 degrees Celsius, it accelerates the movement of fat cells, liquefying and decomposing the fat within the cells. Excess water and toxins are then expelled from the body through lymphatic vessels, restoring muscle and cell tension, enhancing blood circulation, and strengthening the stretching of collagen tissue. This results in a slimmer, wrinkle-free appearance. Simultaneously, it promotes immediate collagen contraction, and the dermis secretes more new collagen to fill the gaps left by the contracted and lost collagen, thereby lifting the skin's support structure again and making the treated area firmer and more lifted.

[0004] Therefore, the beauty device incorporates a power amplifier circuit. This circuit operates in the 41MHz frequency band and amplifies the radio frequency signal. However, existing power amplifier circuits suffer from low efficiency.

[0005] Therefore, it is necessary to provide a power amplifier circuit for beauty devices to solve the above-mentioned technical problems. Utility Model Content

[0006] This invention provides a power amplifier circuit for a beauty device, which effectively solves the technical problem of low efficiency in existing power amplifier circuits.

[0007] This utility model provides a power amplifier circuit for a beauty device, which includes, The control module is used to output control voltage, regulating voltage, and bias voltage. A numerically controlled attenuation module, connected to the control module, receives external radio frequency signals and is used to adjust the attenuation of the numerically controlled attenuation module and the gain of the power amplifier module based on the adjustment voltage. An automatic level control module, connected to the control module and the digitally controlled attenuation module, is used to adjust the power of the radio frequency signal of the entire circuit based on the control voltage; A power amplifier module includes a transistor, which has an input terminal, an output terminal, and a control terminal. The input terminal is used to receive an external radio frequency signal, the control terminal is connected to the control module, and the output terminal is connected to the isolation module. The transistor is used to perform power amplification on the radio frequency signal based on the bias voltage. The power amplifier module is configured with a microstrip balun circuit structure. The isolation module is used to isolate partially reflected radio frequency signals, which are generated by the power amplification module, and the isolation module outputs the radio frequency signals. A power detection module includes an input power detection unit, a forward power detection unit, and a reverse power detection unit. One end of the input power detection unit is connected to the digitally controlled attenuation module, and the other end is connected to the control module. The input power detection unit is used to generate an input power detection signal based on the radio frequency signal. One end of the forward power detection unit is connected to the power amplification module, and the other end is connected to the control module. The power amplification module transmits a portion of the amplified radio frequency signal to the forward power detection unit, and the forward power detection unit generates a forward power detection signal based on the amplified portion of the radio frequency signal. One end of the reverse power detection unit is connected to the isolation module, and the other end is connected to the control module. The isolation module reflects a portion of the radio frequency signal to the reverse power detection unit, and the reverse power detection unit generates a reverse power detection signal based on the partially reflected radio frequency signal. The control module is used to adjust the control voltage, the adjustment voltage, and the bias voltage based on the input power detection signal, the forward power detection signal, and the reverse power detection signal, thereby adjusting the output power of the power amplifier circuit.

[0008] Furthermore, the digitally controlled attenuation module includes a digital attenuator chip, which is used to adjust the gain of the radio frequency signal based on the adjustment voltage. The digital attenuator chip includes an RF1 pin, an RF2 pin, and an adjustment voltage input pin. The adjustment voltage input pin is connected to the control module and is used to input the adjustment voltage. The RF1 pin is used to receive the radio frequency signal, and the RF2 pin is used to output the radio frequency signal after adjustment of the gain.

[0009] Furthermore, the automatic level control module includes two varactor diodes, which are connected in series to form a varactor diode group. The varactor diode group is used to adjust the power of the radio frequency signal based on the control voltage. The control terminal of the varactor diode group is connected to the control module for inputting the control voltage. The input terminal of the varactor diode group is connected to the RF2 pin, and the output terminal of the varactor diode group is used to output the radio frequency signal with adjusted power.

[0010] Furthermore, the power amplification module also includes a power distribution unit. One end of the power distribution unit is used to receive external radio frequency signals, and the other end of the power distribution unit is connected to the input terminal. The power distribution unit is used to perform power distribution operations on the radio frequency signals.

[0011] Furthermore, the power amplification module also includes a power combining unit, one end of which is connected to the output terminal and the other end of which is connected to the isolation module. The power combining unit is used to perform power combining operation on the amplified radio frequency signal.

[0012] Furthermore, the control module includes a control chip, which includes an adjustable voltage output pin, a control voltage output pin, and a bias voltage output pin. The adjustable voltage output pin is used to output the adjustable voltage and is connected to the adjustable voltage input pin. The control voltage output pin is used to output the control voltage and is connected to the control terminal of the varactor diode group. The bias voltage output pin is used to output the bias voltage and is connected to the control terminal.

[0013] Furthermore, the input power detection unit includes an input power detection chip, which includes a first input pin and a first output pin. The control chip includes a P2.3 pin. The first input pin is connected to the RF1 pin, and the first output pin is connected to the P2.3 pin. The first input pin is used to input the radio frequency signal, the input power detection chip is used to generate the input power detection signal based on the radio frequency signal, and the first output pin is used to output the input power detection signal.

[0014] Furthermore, the forward power detection unit includes a forward power detection chip, which includes a second input pin and a second output pin. The control chip includes a P2.4 pin. The second input pin is connected to the output terminal, and the second output pin is connected to the P2.4 pin. The second input pin is used to input a portion of the power-amplified radio frequency signal. The power detection chip is used to generate the forward power detection signal based on the power-amplified portion of the radio frequency signal. The second output pin is used to output the forward power detection signal.

[0015] Furthermore, the reverse power detection unit includes a reverse power detection chip, which includes a third input pin and a third output pin. The control chip includes a P2.5 pin. The third input pin is connected to the isolation module, and the third output pin is connected to the P2.5 pin. The third input pin is used to input a partially reflected radio frequency signal. The reverse power detection chip is used to generate the reverse power detection signal based on the partially reflected radio frequency signal. The third output pin is used to output the reverse power detection signal.

[0016] Furthermore, the transistor is an LDMOS power transistor.

[0017] Compared to existing technologies, this invention offers the following advantages: It provides a power amplifier circuit for a beauty device, which includes a control module. A digitally controlled attenuation module adjusts the gain of the radio frequency (RF) signal based on an adjustable voltage. An automatic level control module adjusts the power of the RF signal across the entire circuit based on a control voltage. The power amplification module amplifies the RF signal based on a bias voltage. Based on input power detection signals, forward power detection signals, and reverse power detection signals, the control chip adjusts the control voltage, the adjustable voltage, and the bias voltage, thereby adjusting the output power of the power amplifier circuit. Therefore, even if the RF signal fluctuates during transmission, the power amplifier circuit can still stably output a high-power RF signal under the adjustment of the control chip. Consequently, compared to traditional power amplifier circuits, this power amplifier circuit for beauty devices has higher efficiency. This power amplifier circuit effectively solves the technical problem of low efficiency in existing power amplifier circuits.

[0018] Furthermore, the power amplifier module employs a microstrip balun circuit structure, resulting in a high degree of integration. The internal power amplifier circuit helps reduce the product's size. Compared to traditional coaxial balun circuit structures, microstrip balun circuit structures offer advantages such as simpler circuitry, less manual assembly, and greater suitability for mass production. Attached Figure Description

[0019] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the embodiments are briefly introduced below. The drawings described below are only the corresponding drawings of some embodiments of this utility model.

[0020] Figure 1 This is a block diagram of an embodiment of the power amplifier circuit for a beauty device according to the present invention.

[0021] Figure 2 This is a circuit diagram of the digitally controlled attenuation module of a power amplifier circuit for a beauty device according to this utility model.

[0022] Figure 3 This is a circuit diagram of the automatic level control module of an embodiment of the power amplifier circuit of the beauty instrument of this utility model.

[0023] Figure 4 This is a circuit diagram of the power amplifier module of one embodiment of the power amplifier circuit of the beauty instrument of this utility model.

[0024] Figure 5 This is a circuit diagram of the control module of an embodiment of the power amplifier circuit for a beauty device according to this utility model.

[0025] Figure 6 This is a circuit diagram of the input power detection unit of an embodiment of the power amplifier circuit of the beauty instrument of this utility model.

[0026] Figure 7 This is a circuit diagram of the forward power detection unit of a power amplifier circuit for a beauty device according to this utility model.

[0027] Figure 8 This is a circuit diagram of the reverse power detection unit of an embodiment of the power amplifier circuit of the beauty instrument of this utility model.

[0028] In the diagram, 10 is the power amplifier circuit; 11 is the control module; 12 is the digitally controlled attenuation module; 13 is the automatic level control module; 131 is the varactor diode group; 132 is the input terminal of the varactor diode group; 133 is the output terminal of the varactor diode group; 134 is the control terminal of the varactor diode group; 14 is the power amplifier module; 141 is the input terminal; 142 is the output terminal; 143 is the control terminal; 144 is the power distribution unit; 145 is the power combining unit; 15 is the isolation module; 16 is the power detection module; 161 is the input power detection unit; 1611 is the first input pin; 1612 is the first output pin; 162 is the forward power detection unit; 1621 is the second input pin; 1622 is the second output pin; 163 is the reverse power detection unit; 1631 is the third input pin; 1632 is the third output pin. Detailed Implementation

[0029] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of the present utility model.

[0030] The directional terms mentioned in this utility model, such as "up", "down", "front", "back", "left", "right", "inner", "outer", "side", "top" and "bottom", are only for reference to the orientation of the accompanying drawings. The directional terms used are for the purpose of explaining and understanding this utility model, and are not intended to limit this utility model.

[0031] The terms "first" and "second" in this utility model are used for descriptive purposes only and should not be construed as indicating or implying relative importance, nor as a restriction on the order of events.

[0032] In the diagram, units with similar structures are represented by the same labels.

[0033] Please refer to Figure 1 This invention provides a power amplifier circuit 10 for a beauty device. The power amplifier circuit 10 includes a control module 11, a digitally controlled attenuation module 14, an automatic level control module 13, a power amplifier module 14, an isolation module 15, and a power detection module 16. The power amplifier circuit 10 also includes an input interface through which external radio frequency (RF) signals can be input. The control module 11 outputs control voltage, adjustment voltage, and bias voltage. The digitally controlled attenuation module 12 connects to the control module 11 and the input interface. The digitally controlled attenuation module 12 receives RF signals and adjusts its attenuation based on the adjustment voltage, thereby adjusting the gain of the power amplifier module 14. The automatic level control module 13 connects to the control module 11 and the digitally controlled attenuation module 12. The automatic level control module 13 adjusts the power of the RF signal in the entire circuit based on the control voltage.

[0034] Please refer to Figure 1 and Figure 4The power amplifier module 14 includes a transistor Q1, which is an LDMOS power transistor. Transistor Q1 includes an input terminal 141, an output terminal 142, and a control terminal 143. The input terminal 141 is connected to an input interface, allowing it to receive external radio frequency signals. The control terminal 143 is connected to the control module 11. The output terminal 141 is connected to the isolation module 15. Transistor Q1 is used for power amplification of the radio frequency signal based on a bias voltage. The power amplifier module 14 employs a microstrip balun circuit structure. In the prior art, the circuit design of a coaxial balun structure is relatively complex. However, the circuit design of a microstrip balun structure is simpler. The use of a microstrip balun circuit structure in the power amplifier module 14 results in a higher integration density for the power amplifier circuit 10 of the beauty device. The internal placement of this power amplifier circuit within the product helps reduce its size. Compared to the traditional coaxial balun circuit structure, the microstrip balun circuit structure has the advantages of simpler circuitry, less manual assembly, and greater suitability for mass production.

[0035] Please refer to Figure 1The isolation module 15 is used to isolate partially reflected radio frequency (RF) signals, which are generated by the power amplification module 14. The power amplification circuit of this beauty device also includes an output interface connected to the isolation module 15. The isolation module 15 can output RF signals through the output interface. Furthermore, the isolation module 15 primarily protects the power amplification module 14. The isolation module 15 absorbs most of the transmitted signal, and the remaining reflected signal enters the reverse power detection unit 163. The power detection module 16 includes an input power detection unit 161, a forward power detection unit 162, and a reverse power detection unit 163. One end of the input power detection unit 161 is connected to the digitally controlled attenuation module 12, and the other end is connected to the control module 11. The input power detection unit 161 is used to generate an input power detection signal based on the RF signal. One end of the forward power detection unit 162 is connected to the power amplification module 14, and the other end is connected to the control module 11. The power amplification module 14 transmits a portion of the amplified RF signal to the forward power detection unit 162. The forward power detection unit 162 generates a forward power detection signal based on a portion of the amplified radio frequency signal. One end of the reverse power detection unit 163 is connected to the isolation module 15, and the other end is connected to the control module 11. The isolation module 15 reflects a portion of the radio frequency signal to the reverse power detection unit 163, which generates a reverse power detection signal based on the reflected signal. Based on the input power detection signal, the forward power detection signal, and the reverse power detection signal, the control module 11 can adjust the control voltage, the adjustment voltage, and the bias voltage, thereby adjusting the output power of the beauty device's power amplifier circuit.

[0036] Please refer to Figure 1 The control module 11 also includes a temperature compensation unit (not shown in the figure), which generates an ambient temperature signal based on the ambient temperature of the circuit. The control module 11 can adjust the control voltage, regulation voltage, and bias voltage based on the ambient temperature signal, thereby adjusting the output power of the beauty device's power amplifier circuit. Because the control module 11 is equipped with a temperature compensation unit, it can control the attenuation of the radio frequency signal at different temperatures, thus keeping the gain of the radio frequency signal constant.

[0037] Please refer to Figures 2 to 8 The following is a detailed description of the specific structure of the power amplifier circuit 10 of this beauty device: Please refer to Figure 2The digital attenuation module 12 includes a digital attenuator chip U17, which is used to adjust the gain of the radio frequency signal based on the adjustment voltage. The digital attenuator chip U17 includes an RF1 pin, an RF2 pin, and an adjustment voltage input pin. The adjustment voltage input pin is connected to the control module and is used to input the adjustment voltage. The RF1 pin is used to receive the radio frequency signal, and the RF2 pin is used to output the adjusted radio frequency signal. The digital attenuator chip is a 6-bit digital attenuator chip, and its power attenuation is adjustable between 0.5dB and 31.5dB. The adjustment voltage input pin includes adjustment voltage input pins V1, V2, V3, V4, V5, and V6, which can achieve different power attenuation levels. Furthermore, the digital attenuation module 12 can be used to adjust the gain of the beauty device power amplifier circuit 10, thereby enabling the beauty device power amplifier circuit 10 to be used in different applications.

[0038] Please refer to Figure 3 The automatic level control module 13 includes two varactor diodes, D3 and D4, connected in series to form a varactor diode group 131. The varactor diode group 131 can adjust the power of the radio frequency (RF) signal based on the control voltage. The control terminal 134 of the varactor diode group is connected to the control module 11. The control terminal 134 is used to input the control voltage, the input terminal 132 is connected to the RF2 pin, and the output terminal 133 is used to output the RF signal with adjusted power. After a voltage change, the capacitance characteristics of the varactor diode group 131 also change, thereby altering the attenuation of the RF signal. The control module 11 can output control voltages of different values ​​to the automatic level control module 13, causing changes in the attenuation of the automatic level control module 13, thus adjusting the output power of the RF signal. The automatic level control module enables automatic level control of the power amplifier circuit of the beauty device, preventing the transistor from being damaged by a sudden increase in input power. The automatic level control module also protects transistor Q1.

[0039] Please refer to Figure 4The power amplifier module 14 also includes a power distribution unit 144. One end of the power distribution unit 144 is connected to the input interface, and the power distribution unit 144 can receive external radio frequency signals. The other end of the power distribution unit 144 is connected to the input terminal 141, and the power distribution unit is used to perform power distribution operations on the radio frequency signals. The power distribution unit 144 includes capacitors C31, C32, C33, C34, and C35, and the power distribution unit 144 performs power distribution operations through a microstrip balun circuit structure. The power amplifier module 14 also includes a power combining unit 145, one end of the power combining unit 145 is connected to the output terminal 143, and the other end of the power combining unit 145 is connected to the isolation module 15, and the power combining unit 145 is used to perform power combining operations on the power-amplified radio frequency signals. The power combining unit 145 includes capacitors C11, C12, C13, C14, C15, C16, C17, C18, C19, and C20. The power combining unit 145 performs power distribution operations through a microstrip balun circuit structure.

[0040] Please refer to Figure 5 The control module includes a control chip U1, which is a fully integrated mixed-signal system-on-a-chip (MCU). Control chip U1 includes adjustable voltage output pins, control voltage output pins, and bias voltage output pins. The adjustable voltage output pins are P4.2, P4.3, P4.4, P4.5, P4.6, and P4.7. The bias voltage output pins are P2.0 and P2.1. The adjustable voltage output pins are used to output the adjusted voltage. Adjustable voltage output pin P4.2 is connected to the adjustable voltage input pin V1. Adjustable voltage output pin P4.3 is connected to the adjustable voltage input pin V2, and adjustable voltage output pin P4.4 is connected to the adjustable voltage input pin V3. The adjustable voltage output pin P4.5 is connected to the adjustable voltage input pin V4, the adjustable voltage output pin P4.6 is connected to the adjustable voltage input pin V5, and the adjustable voltage output pin P4.7 is connected to the adjustable voltage input pin V6. The control voltage output pin P2.2 is used to output the control voltage and is connected to the control terminal 134 of the varactor diode group. The bias voltage output pin is used to output the bias voltage, and the control terminal 143 is connected to the bias voltage output pins P2.0 and P2.1 respectively.

[0041] Please refer to Figure 6The input power detection unit 161 includes an input power detection chip U31, which is a power detector. The input power detection chip U31 includes a first input pin 1611 and a first output pin 1612, and the control chip U1 includes a P2.3 pin. The first input pin 1611 is connected to the RF1 pin, and the first output pin 1612 is connected to the P2.3 pin. The first input pin 1611 is used to input radio frequency signals. The input power detection chip U31 can generate an input power detection signal based on the radio frequency signal, and the first output pin 1612 is used to output the input power detection signal.

[0042] Please refer to Figure 7 The forward power detection unit 162 includes a forward power detection chip U32, which is a power detector. The forward power detection chip U32 includes a second input pin 1621 and a second output pin 1622. The control chip U1 includes a P2.4 pin. The second input pin 1621 is connected to the output terminal 142, and the second output pin is connected to the P2.4 pin. The second input pin 1621 is used to input a portion of the amplified RF signal, the forward power detection chip U32 is used to generate a forward power detection signal based on the amplified portion of the RF signal, and the second output pin 1622 is used to output the forward power detection signal.

[0043] Please refer to Figure 8 The reverse power detection unit 163 includes a reverse power detection chip U33, and the reverse power detection chip U32 is a power detector. The reverse power detection chip U33 includes a third input pin 1631 and a third output pin 1632, and the control chip U1 includes a P2.5 pin. The third input pin 1631 is connected to the isolation module 15, and the third output pin 1632 is connected to the P2.5 pin. The third input pin 1631 is used to input a partially reflected RF signal, the reverse power detection chip U33 is used to generate a reverse power detection signal based on the partially reflected RF signal, and the third output pin 1632 is used to output the reverse power detection signal.

[0044] Please refer to Figure 5The control module 11 mainly consists of a control chip U1, a storage chip U5, and a communication interface chip U4. Control chip U1 provides bias voltage to the amplification module, adjustment voltage to the digitally controlled attenuation module, and control voltage to the automatic level control module. Input power detection provides the input power detection signal to the control module, forward power detection provides the forward power detection signal, and reverse power detection provides the reverse power detection signal. Based on the input power detection signal, forward power detection signal, and reverse power detection signal, control chip U1 can adjust the control voltage, adjustment voltage, and bias voltage, thereby adjusting the output power of the beauty device's power amplification circuit. The control module can be connected to a host computer or other devices via the communication interface chip U5, allowing the host computer or other devices to monitor the operating status of the entire beauty device's power amplification circuit in real time.

[0045] The working principle of this utility model is as follows: When the power amplifier circuit 10 of the beauty device is working, an external radio frequency (RF) signal can be input through the input interface, and the control module 11 outputs a control voltage, an adjustment voltage, and a bias voltage. Simultaneously, the digitally controlled attenuation module 12 receives the RF signal and adjusts the attenuation amount based on the adjustment voltage, thereby adjusting the gain of the power amplifier module 14. Then, the automatic level control module 13 receives the RF signal and adjusts the power of the RF signal based on the control voltage. Next, the power amplifier module 14 receives the RF signal with adjusted power and can perform power amplification on the RF signal based on the bias voltage. The isolation module 15 isolates partially reflected RF signals, which are generated by the power amplifier module 14. Subsequently, the isolation module 15 outputs the RF signal through the output interface. Furthermore, the power detection module 16 includes an input power detection unit 161, a forward power detection unit 162, and a reverse power detection unit 163. The input power detection unit 161 can generate an input power detection signal based on the radio frequency signal, the forward power detection unit 162 can generate a forward power detection signal based on a portion of the power-amplified radio frequency signal, and the reverse power detection unit 163 can generate a reverse power detection signal based on a portion of the reflected radio frequency signal. Based on the input power detection signal, the forward power detection signal, and the reverse power detection signal, the control module 11 can adjust the control voltage, the adjustment voltage, and the bias voltage, thereby adjusting the output power of the beauty device power amplifier circuit 10.

[0046] This invention provides a power amplifier circuit for a beauty device, which includes a control module. A digitally controlled attenuation module adjusts the gain of the radio frequency (RF) signal based on an adjustable voltage, an automatic level control module adjusts the power of the RF signal across the entire circuit based on a control voltage, and a power amplification module amplifies the RF signal based on a bias voltage. Based on input power detection signals, forward power detection signals, and reverse power detection signals, a control chip adjusts the control voltage, the adjustable voltage, and the bias voltage, thereby adjusting the output power of the power amplifier circuit. Therefore, even if the RF signal fluctuates during transmission, the power amplifier circuit can still stably output a high-power RF signal under the adjustment of the control chip. Consequently, compared to traditional power amplifier circuits, this power amplifier circuit for beauty devices has higher efficiency. This power amplifier circuit for beauty devices effectively solves the technical problem of low efficiency in existing power amplifier circuits.

[0047] Furthermore, the power amplifier module employs a microstrip balun circuit structure, resulting in a high degree of integration of the power amplifier circuit in this beauty device. The internal design of the power amplifier circuit helps reduce the product's size. Compared to the traditional coaxial balun circuit structure, the microstrip balun circuit structure offers advantages such as simpler circuitry, less manual assembly, and greater suitability for mass production.

[0048] In summary, although the present invention has been disclosed above with reference to preferred embodiments, the above preferred embodiments are not intended to limit the present invention. Those skilled in the art can make various modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the scope defined in the claims.

Claims

1. A power amplifier circuit for a beauty device, characterized in that, It includes, The control module is used to output control voltage, regulating voltage, and bias voltage. A numerically controlled attenuation module, connected to the control module, receives external radio frequency signals and adjusts the attenuation of the numerically controlled attenuation module based on the voltage adjustment, thereby adjusting the gain of the power amplifier module; An automatic level control module, connected to the control module and the digitally controlled attenuation module, is used to adjust the power of the radio frequency signal of the entire circuit based on the control voltage; A power amplifier module includes a transistor, which has an input terminal, an output terminal, and a control terminal. The input terminal is used to receive an external radio frequency signal, the control terminal is connected to the control module, and the output terminal is connected to an isolation module. The transistor is used to perform power amplification on the radio frequency signal based on the bias voltage. The power amplifier module is configured with a microstrip balun circuit structure. The isolation module is used to isolate partially reflected radio frequency signals, which are generated by the power amplification module, and the isolation module outputs the radio frequency signals. A power detection module includes an input power detection unit, a forward power detection unit, and a reverse power detection unit. One end of the input power detection unit is connected to the digitally controlled attenuation module, and the other end is connected to the control module. The input power detection unit is used to generate an input power detection signal based on the radio frequency signal. One end of the forward power detection unit is connected to the power amplification module, and the other end is connected to the control module. The power amplification module transmits a portion of the amplified radio frequency signal to the forward power detection unit, and the forward power detection unit generates a forward power detection signal based on the amplified portion of the radio frequency signal. One end of the reverse power detection unit is connected to the isolation module, and the other end is connected to the control module. The isolation module reflects a portion of the radio frequency signal to the reverse power detection unit, and the reverse power detection unit generates a reverse power detection signal from the partially reflected radio frequency signal. The control module is used to adjust the control voltage, the adjustment voltage, and the bias voltage based on the input power detection signal, the forward power detection signal, and the reverse power detection signal, thereby adjusting the output power of the power amplifier circuit.

2. The power amplifier circuit for the beauty device according to claim 1, characterized in that, The digitally controlled attenuation module includes a digital attenuator chip. The digital attenuator chip is used to adjust the gain of the radio frequency signal based on the adjustment voltage. The digital attenuator chip includes an RF1 pin, an RF2 pin, and an adjustment voltage input pin. The adjustment voltage input pin is connected to the control module and is used to input the adjustment voltage. The RF1 pin is used to receive the radio frequency signal, and the RF2 pin is used to output the radio frequency signal after adjustment of the gain.

3. The power amplifier circuit for the beauty device according to claim 2, characterized in that, The automatic level control module includes two varactor diodes connected in series to form a varactor diode group. The varactor diode group is used to adjust the power of the radio frequency signal based on the control voltage. The control terminal of the varactor diode group is connected to the control module and is used to input the control voltage. The input terminal of the varactor diode group is connected to the RF2 pin, and the output terminal of the varactor diode group is used to output the radio frequency signal after power adjustment.

4. The power amplifier circuit for the beauty device according to claim 1, characterized in that, The power amplification module further includes a power distribution unit. One end of the power distribution unit receives an external radio frequency signal, and the other end of the power distribution unit is connected to the input terminal. The power distribution unit is used to perform power distribution operations on the radio frequency signal.

5. The power amplifier circuit for the beauty device according to claim 1, characterized in that, The power amplification module further includes a power combining unit. One end of the power combining unit is connected to the output terminal, and the other end of the power combining unit is connected to the isolation module. The power combining unit is used to perform power combining operation on the amplified radio frequency signal.

6. The power amplifier circuit for the beauty device according to claim 3, characterized in that, The control module includes a control chip, which includes an adjustable voltage output pin, a control voltage output pin, and a bias voltage output pin. The adjustable voltage output pin is used to output the adjustable voltage and is connected to the adjustable voltage input pin. The control voltage output pin is used to output the control voltage and is connected to the control terminal of the varactor diode group. The bias voltage output pin is used to output the bias voltage and is connected to the control terminal.

7. The power amplifier circuit for the beauty device according to claim 6, characterized in that, The input power detection unit includes an input power detection chip, which includes a first input pin and a first output pin. The control chip includes a P2.3 pin. The first input pin is connected to the RF1 pin, and the first output pin is connected to the P2.3 pin. The first input pin is used to input the radio frequency signal. The input power detection chip is used to generate the input power detection signal based on the radio frequency signal. The first output pin is used to output the input power detection signal.

8. The power amplifier circuit for the beauty device according to claim 6, characterized in that, The forward power detection unit includes a forward power detection chip, which includes a second input pin and a second output pin. The control chip includes a P2.4 pin. The second input pin is connected to the output terminal, and the second output pin is connected to the P2.4 pin. The second input pin is used to input a portion of the amplified radio frequency signal. The power detection chip is used to generate the forward power detection signal based on the amplified portion of the radio frequency signal. The second output pin is used to output the forward power detection signal.

9. The power amplifier circuit for the beauty device according to claim 6, characterized in that, The reverse power detection unit includes a reverse power detection chip, which includes a third input pin and a third output pin. The control chip includes a P2.5 pin. The third input pin is connected to the isolation module, and the third output pin is connected to the P2.5 pin. The third input pin is used to input a partially reflected radio frequency signal. The reverse power detection chip is used to generate the reverse power detection signal based on the partially reflected radio frequency signal. The third output pin is used to output the reverse power detection signal.

10. The power amplifier circuit for the beauty device according to claim 1, characterized in that, The transistor is an LDMOS power transistor.