Semiconductor package assembly

Abstract

The utility model discloses a semiconductor packaging assembly, include: first thermal interface material layer is arranged on a semiconductor chip, heat transfer module is arranged on the first thermal interface material layer, second thermal interface material layer is arranged on the heat transfer module and the heat dissipation module is set up on the second thermal interface material layer. The heat of semiconductor chip in the utility model can be quickly transferred to the heat transfer module through the first thermal interface material layer, and then is radiated through the heat dissipation module, and the heat dissipation area is larger, therefore the semiconductor packaging assembly of the utility model can more efficient and reliable heat transfer of chip to external environment, has higher heat dissipation efficiency.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and in particular to a semiconductor packaging component. Background Technology

[0002] As chip manufacturing processes become increasingly advanced, the number of transistors within chips increases, leading to greater heat generation and higher heat flux. If this heat cannot be dissipated in time, the chip temperature will exceed its operating temperature limit, affecting normal operation and consequently impacting user experience (e.g., driving experience) and safety. Thermal interface materials are typically used between heat-generating semiconductor chips and their associated heat sinks. These materials provide efficient and reliable heat conduction from the chip to the heat sink. However, current thermal interface materials exhibit relatively low conductivity, failing to meet the ever-increasing demands for heat dissipation.

[0003] Therefore, a novel semiconductor packaging component is needed to transfer the heat of the chip to the external environment more efficiently and reliably. Utility Model Content

[0004] In view of this, the present invention provides a semiconductor packaging component to transfer the heat of the chip to the external environment more efficiently and reliably.

[0005] According to a first aspect of the present invention, a semiconductor packaging assembly is disclosed, comprising: a first thermal interface material layer disposed on a semiconductor chip; a heat transfer module disposed on the first thermal interface material layer; a second thermal interface material layer disposed on the heat transfer module; and a heat dissipation module disposed on the second thermal interface material layer.

[0006] Furthermore, the heat transfer module is made of materials including copper alloys, aluminum alloys, titanium alloys, or combinations thereof. These metal materials can improve heat conduction efficiency and can fully and tightly adhere to the upper and lower first and second thermal interface material layers to accelerate heat conduction.

[0007] Furthermore, the first thermal interface material layer and the second thermal interface material layer respectively comprise thermally conductive gel, thermally conductive silicone grease, phase change sheet, thermal pad, or a combination thereof. These materials of the thermal interface material layers can help dissipate heat quickly and improve heat dissipation efficiency. The materials of the first thermal interface material layer and the second thermal interface material layer can be the same or different to adapt to different manufacturing and heat dissipation requirements.

[0008] Furthermore, the thickness of the first thermal interface material layer is between 0.03 and 0.3 mm, and the thickness of the second thermal interface material layer is between 0.2 and 0.6 mm. This allows the first thermal interface material layer to be manufactured thinner, thereby further improving heat dissipation efficiency.

[0009] Furthermore, the thickness of the first thermal interface material layer is between 0.03 and 0.1 mm. Making the first thermal interface material layer thinner further improves heat dissipation efficiency.

[0010] Furthermore, the thickness of the first thermal interface material layer is less than the thickness of the second thermal interface material layer. Making the first thermal interface material layer thinner further improves heat dissipation efficiency.

[0011] Furthermore, the heat transfer module includes a cover that completely covers the first thermal interface material layer. This allows for ample, large-area contact between the heat transfer module and the first thermal interface material layer, increasing the heat transfer area.

[0012] Furthermore, the heat transfer module also includes an extension connected to the cover, which protrudes from the sidewall of the cover, and the second interface material layer completely covers the cover and the extension. This results in a larger heat dissipation area for the heat transfer module and a larger heat dissipation contact surface between the second interface material layer and the heat transfer module, thereby improving heat dissipation efficiency.

[0013] Furthermore, a shielding cover is mounted on the circuit board, the shielding cover having an opening, and at least a portion of the cover, the first thermal interface material layer, and the semiconductor chip are disposed within the opening. The shielding cover not only protects the semiconductor chip and related components, but also protects the mounting stability of these components, as well as protecting other components mounted on the circuit board, such as radio frequency components, from interference.

[0014] Furthermore, the extension is mounted on the shielding cover. This allows for more stable installation of the heat transfer module and improves the structural stability of the semiconductor packaging assembly.

[0015] Furthermore, the heat transfer module also includes a support portion connected to the extension, which is connected to the circuit board and surrounds the semiconductor chip. This further improves the stability of the heat transfer module's installation and enhances the structural stability of the semiconductor package assembly.

[0016] Furthermore, fasteners are provided between the support and the circuit board to ensure stability during the installation of the heat transfer module and improve the structural stability of the semiconductor packaging assembly.

[0017] Furthermore, the side or top surface of the semiconductor chip includes a metal layer, and there are solder joints between the heat transfer module and the metal layer of the semiconductor chip. This allows for a stable connection between the heat transfer module and the semiconductor chip, and ensures that the first thermal interface material layer is tightly and closely disposed between the heat transfer module and the semiconductor chip.

[0018] The semiconductor packaging assembly of this invention includes: a first thermal interface material layer disposed on a semiconductor chip; a heat transfer module disposed on the first thermal interface material layer; a second thermal interface material layer disposed on the heat transfer module; and a heat dissipation module disposed on the second thermal interface material layer. In this invention, the heat from the semiconductor chip can be quickly transferred through the first thermal interface material layer to the heat transfer module, and then dissipated through the heat dissipation module. Therefore, the semiconductor packaging assembly of this invention can more efficiently and reliably transfer the heat from the chip to the external environment, exhibiting high heat dissipation efficiency. Attached Figure Description

[0019] Figure 1 This is a cross-sectional view of a semiconductor packaging assembly according to some embodiments of the present invention.

[0020] Figure 2 This is a cross-sectional view of a semiconductor packaging assembly according to some other embodiments of the present invention.

[0021] Figure 3 This is a cross-sectional view of a semiconductor packaging assembly according to some other embodiments of the present invention.

[0022] Figure 4 This is a cross-sectional view of a semiconductor packaging assembly according to some other embodiments of the present invention. Detailed Implementation

[0023] The following description is for illustrating the general principles of this invention and should not be construed as restrictive. The scope of this invention is best determined by referring to the appended claims. In embodiments of this invention, when an element or layer is referred to as being "located," "connected to," or "coupled to" another element or layer, it may be directly located, connected to, or coupled to that other element or layer, or there may be intermediate elements or layers. Conversely, when an element is referred to as being "directly located," "directly connected to," or "directly coupled to" another element or layer, there are no intermediate elements or layers. The same numbers always refer to the same element. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items. "Directly above," "directly below," may indicate that the projections of two or more overlap at least partially, while "not directly above" or "directly below" may indicate that the projections of two or more overlap not at all.

[0024] With the increasing use of semiconductor chips, meeting power requirements has become a priority. As chip power increases, the heat dissipation of semiconductor packaging components has become a major concern to prevent performance degradation due to high temperatures. Traditionally, thermal interface material (TIM) is distributed between the flip chip and the heat sink. However, this structure results in a relatively thick TIM with poor thickness uniformity, leading to less than ideal heat dissipation. This inadequacy is particularly problematic as chip power increases and heat generation rises. Therefore, this invention provides a novel semiconductor packaging component to improve heat dissipation efficiency and meet the growing demands of chip heat generation.

[0025] Figure 1 This is a cross-sectional view of a semiconductor package assembly 500A according to some embodiments of the present invention. In some embodiments, the semiconductor package assembly 500A may be part of a mobile terminal such as a mobile phone, a motor vehicle such as an automobile, a computing device such as a server, etc. In some embodiments, the semiconductor package assembly 500A may or may not include a circuit board 100; that is, the circuit board 100 may be part of the semiconductor package 500A or located outside the semiconductor package 500A. The circuit board 100 may be, for example, a printed circuit board (PCB), an interposer, a package substrate, other semiconductor devices, or a semiconductor package. In some embodiments, the circuit board 100 may be formed of a dielectric material (e.g., polypropylene (PP), epoxy resin, polyimide, or other suitable resin material) or a semiconductor material. The circuit board 100 has an upper surface 100T and a bottom surface opposite to the upper surface 100T. A plurality of conductive traces, conductive vias, and / or conductive pads may be provided within the circuit board 100. The conductive traces may be electrically connected to the corresponding conductive vias and conductive pads. Conductive pads and / or conductive traces are exposed through openings in the solder mask layer disposed near the upper surface 100T and the bottom surface. In one embodiment, the conductive traces may include signal trace segments or ground trace segments for input / output connections of the semiconductor package 500A. Furthermore, conductive pads are disposed on the upper surface 100T of the base 100 and connected to different terminals of the conductive traces. In some embodiments, the semiconductor package assembly 500A may include a semiconductor chip 200 mounted on the upper surface 100T of the circuit board 100. Conductive pads near the upper surface 100T of the circuit board 100 are used for direct connection to the semiconductor chip 200 mounted on the upper surface 100T. Other components such as capacitors, antennas, and radio frequency components may also be mounted on the upper surface 100T of the circuit board 100.

[0026] In some embodiments, the semiconductor chip 200 may be a chip in BGA (Ball Grid Array Package) package, an LGA (Land Grid Array) package, or other packaged chips. The semiconductor chip 200 may be mounted on the upper surface 100T of the circuit board 100 in a flip-chip configuration. Figure 1 As shown, in some embodiments, the semiconductor chip 200 can be mounted to the upper surface 100T of the circuit board 100 via a conductive structure 202, such as a solder ball or conductive bump structure. In some embodiments, the semiconductor chip 200 can be a SoC (System-on-Chip), or a multi-chip package integrating a SoC and a memory chip, etc.

[0027] like Figure 1 As shown, in some embodiments, the semiconductor packaging assembly 500A may include a first thermal interface material layer 210 mounted on the upper surface of the semiconductor chip 200. The first thermal interface material layer 210 may completely cover the upper surface of the semiconductor chip 200, thereby allowing the semiconductor chip 200 to have sufficient large-area contact with the first thermal interface material layer 210, increasing the heat transfer area and improving heat dissipation efficiency. The material of the first thermal interface material layer 210 may include thermally conductive gel, thermally conductive silicone grease, phase change sheet, thermal pad, or a combination thereof. In some embodiments, the thermally conductive gel includes silicon substrate material, epoxy resin substrate material, acrylic substrate material, silver paste, etc. The first thermal interface material layer 210 may include metallic and / or non-metallic materials to provide design flexibility and high thermal conductivity.

[0028] The semiconductor packaging assembly 500A may further include a heat transfer module 230 mounted on the first thermal interface material layer 210. The heat transfer module 230 may be made of a metal, such as copper, aluminum, copper alloy, aluminum alloy, titanium alloy, stainless steel, etc. The heat transfer module 230 may also be made of a non-metallic material, such as ceramic. Viewed from a top view, the area of ​​the heat transfer module 230 may be greater than or equal to the area of ​​the first thermal interface material layer 210 and / or the area of ​​the semiconductor chip 200, so that the heat transfer module 230 can fully contact the first thermal interface material layer 210, increasing the heat dissipation contact area and improving heat dissipation efficiency. In some embodiments, a thermal interface material may be mounted on the upper surface of the semiconductor chip 200, and then the mounted thermal interface material may be pressed to the desired thickness to form the first thermal interface material layer 210 before the heat transfer module 230 is mounted, or the heat transfer module 230 may be mounted after the pressed thermal interface material has cured. This method allows for a thinner first thermal interface material layer 210, thereby improving heat transfer efficiency. Furthermore, the first thermal interface material layer 210 formed after pressing has a tighter contact and adhesion with the semiconductor chip 200 and the heat transfer module 230, which can further improve the heat transfer efficiency and thus accelerate the transfer of heat from the semiconductor chip to the outside. The curing of the thermal interface material can be carried out by baking curing, natural curing, stress curing, etc.

[0029] In some embodiments, the thickness T1 of the first thermal interface material layer 210 can be between 0.03 and 0.3 mm. For example, the thickness T1 of the first thermal interface material layer 210 can be 0.03 mm (i.e., 30 micrometers), thereby further improving heat transfer efficiency and reducing the thickness tolerance of the first thermal interface material layer 210. In some embodiments, the thickness T1 of the first thermal interface material layer 210 can be between 0.03 and 0.1 mm, thereby further reducing the thickness of the first thermal interface material layer 210 and improving heat dissipation efficiency. For example, the thickness T1 of the first thermal interface material layer 210 can also be 31, 32, 39, 45, 58, 96, 100, 111, 180, 219, 290, or 300 micrometers to meet different design requirements and improve design flexibility.

[0030] In some embodiments, when the first thermal interface material layer 210 has a certain degree of adhesion, the heat transfer module 230 can be directly bonded to the first thermal interface material layer 210, thus bonding the first thermal interface material layer 210 between the heat transfer module 230 and the semiconductor chip 200 for easy installation. In some embodiments, the heat transfer module 230 can also be connected to the semiconductor chip 200 by welding. For example, the side (or sidewall) or upper surface of the semiconductor chip 200 includes a metal layer, and the heat transfer module 230 is welded to the metal layer on the side (or sidewall) or upper surface of the semiconductor chip 200, thus forming solder joints between the heat transfer module 230 and the semiconductor chip 200. These solder joints can be located in the edge region or outer peripheral region of the heat transfer module 230 and the semiconductor chip 200, thereby stably connecting the heat transfer module 230 and the semiconductor chip 200, and tightly and closely fitting the first thermal interface material layer 210 between the heat transfer module 230 and the semiconductor chip 200.

[0031] The semiconductor package assembly 500A may further include a second thermal interface material layer 220 mounted on the heat transfer module 230. The material of the second thermal interface material layer 220 may include thermally conductive gel, thermally conductive silicone grease, phase change sheet, thermal pad, or a combination thereof. The second thermal interface material layer 220 may include metallic and / or non-metallic materials to provide design flexibility and high thermal conductivity. The material of the second thermal interface material layer 220 may be the same as or different from that of the first thermal interface material layer 210. The second thermal interface material layer 220 may completely cover the upper surface of the heat transfer module 230, thereby allowing for sufficient large-area contact between the heat transfer module 230 and the second thermal interface material layer 220, increasing the heat transfer area and thus improving heat dissipation efficiency. In some embodiments, the thickness T2 of the second thermal interface material layer 220 may be from 0.2 to 0.6 mm to improve thermal conductivity. For example, the thickness T2 of the second thermal interface material layer 220 may be 20 micrometers to further improve heat dissipation efficiency. For example, the thickness T2 of the second thermal interface material layer 220 can also be 21, 22, 30, 33, 48, 99, 118, 193, 269, 333, 468, 530, or 300 micrometers to meet different design and manufacturing requirements and improve design flexibility. In some embodiments, the thickness T2 of the second thermal interface material layer 220 can be greater than the thickness T1 of the first thermal interface material layer 210. This can improve the efficiency of heat conduction from the semiconductor chip 200, which serves as a heat source, to the outside environment, and facilitate the manufacturing and formation of the second thermal interface material layer 220, thereby improving production and manufacturing efficiency.

[0032] In some embodiments, the heat transfer module 230 may include a cover 232 located between the first thermal interface material layer 210 and the second thermal interface material layer 220. The sidewalls of the cover 232 may be substantially flush with the sidewalls of the semiconductor chip 200. The sidewalls of the cover 232 may also be substantially flush with the sidewalls of the first thermal interface material layer 210. The thickness of the cover 232 may be greater than the thickness T1 of the first thermal interface material layer 210. The second thermal interface material layer 220 may completely cover the cover 232.

[0033] The semiconductor packaging assembly 500A may further include a heat dissipation module 300 mounted on the second thermal interface material layer 220. The heat dissipation module 300 may be made of metal to improve heat dissipation efficiency. The heat dissipation module 300 may include heat dissipation fins to increase the heat dissipation area. The heat dissipation module 300 includes a heat dissipation body 302 directly located on the second thermal interface material layer 220. Furthermore, the semiconductor packaging assembly of this embodiment is particularly suitable for use in automobiles and other motor vehicles, where environmental factors such as temperature can vary significantly. The semiconductor packaging assembly of this embodiment has higher heat dissipation efficiency and a more stable structure, making it more suitable for use in motor vehicles operating in harsh environments. By adding a heat transfer module, the semiconductor packaging assembly of this embodiment can achieve a thinner first thermal interface material layer. Simultaneously, the semiconductor packaging assembly of this embodiment increases the heat transfer area of ​​the semiconductor chip, thereby improving heat dissipation efficiency and reducing heat dissipation costs.

[0034] The semiconductor packaging component 500A has high heat dissipation efficiency. The heat from the semiconductor chip 200 can be quickly transferred to the heat transfer module 230 through the first thermal interface material layer 210, and then dissipated through the heat dissipation module 300, resulting in a larger heat dissipation area. In this embodiment, the semiconductor packaging component 500A can also have the first thermal interface material layer 210 made thinner, thereby further improving heat dissipation efficiency.

[0035] In some embodiments, the first thermal interface material layer 210 can contact the semiconductor chip 200, the heat transfer module 230 can contact the first thermal interface material layer 210, the second thermal interface material layer 220 can contact the heat transfer module 230, and the heat dissipation module 300 can contact the second thermal interface material layer 220, thereby improving the heat conduction speed.

[0036] In some embodiments, a shielding cover 110 may be mounted on the upper surface 100T of the circuit board 100. The shielding cover 110 may surround the sidewall of the semiconductor chip 200, and the shielding cover 110 has an opening 112 through which the semiconductor chip 200 can be mounted onto the upper surface 100T of the circuit board 100. The shielding cover 110 can protect the semiconductor chip 200, as well as other components mounted on the circuit board 100 (such as radio frequency components), from (or reduce) electromagnetic interference. The shielding cover 110 may be mounted on the circuit board 100 by adhesive or mechanical fixation. The shielding cover 110 may be located between the heat dissipation module 300 and the circuit board 100. The shielding cover 110 may also surround the first thermal interface material layer 210, and may also surround at least a portion of the cover 232 of the heat transfer module 230.

[0037] Figure 2 This is a cross-sectional view of a semiconductor packaging assembly 500B according to other embodiments of the present invention. For the sake of brevity, the embodiments described below are consistent with those previously referenced. Figure 1 Components that are identical or similar to those described will not be repeated. The differences between semiconductor package assembly 500A and semiconductor package assembly 500B include, at least, that the heat transfer module 230 of semiconductor package assembly 500B further includes an extension 234 connected to the cover portion 232. The extension direction of the extension portion 234 may be substantially parallel to the upper surface 100T of the circuit board 100 (or the upper surface of the semiconductor chip 200), thereby increasing the area of ​​the heat transfer module 230 and further improving the heat dissipation speed. The second thermal interface material layer 220 completely covers the cover portion 232 and the extension portion 234 to improve heat dissipation efficiency. In some embodiments, the cover portion 232 and the extension portion 234 may be an integral structure rather than separate structures to improve the structural stability of the semiconductor package assembly 500B.

[0038] In some embodiments, the extension 234 may be located on the shielding cover 110. For example, the extension 234 may be fixed or mounted on the shielding cover 110, thereby improving the structural stability of the semiconductor package assembly 500B. The extension 234 may be fixed or mounted on the shielding cover 110, for example, using adhesive 235, to ensure the stability of the heat transfer module 230 and the subsequently installed heat dissipation module 300. The extension 234 may also be fixed or mounted on the shielding cover 110 in other ways, such as by welding, or by using screws or bolts.

[0039] In some embodiments, the heat dissipation module 300 further includes a housing portion 304 connected to the heat dissipation main body 302. The housing portion 304 can surround the heat transfer module 230, the shielding cover 110, and the circuit board 100. The extending direction of the housing portion 304 can be substantially perpendicular to the upper surface 100T of the circuit board 100. The housing portion 304 can further increase the heat dissipation area and improve heat dissipation efficiency. The housing portion 304 can also protect components such as the heat transfer module 230, the shielding cover 110, and the circuit board 100, ensuring overall stability and mechanical strength.

[0040] Figure 3 This is a cross-sectional view of a semiconductor packaging assembly 500C according to further embodiments of the present invention. For the sake of brevity, the embodiments described below are consistent with those previously referenced. Figure 2 Components that are identical or similar to those described will not be repeated. The differences between semiconductor package assembly 500C and semiconductor package assembly 500B include, at least, that the heat transfer module 230 of semiconductor package assembly 500C further includes a support portion 236 connected to the extension portion 234. The extension direction of the support portion 236 may be substantially perpendicular to the upper surface 100T of the circuit board 100, and the support portion 236 may extend to be mounted or fixed to the upper surface 100T of the circuit board 100. This can further improve the installation stability of the heat transfer module 230 and improve the structural stability of the semiconductor package assembly 500C. In some embodiments, the support portion 236 may be mounted or fixed to the upper surface 100T of the circuit board 100 by fasteners. Fasteners include, for example, adhesives, solder joints, screws, or bolts and nuts, to ensure the stability of the heat transfer module 230 and the subsequently installed heat dissipation module 300. Figure 3 As shown, in this embodiment, the support portion 236 can be mounted or fixed to the upper surface 100T of the circuit board 100 using adhesive 204. In some embodiments, the circuit board 100 may or may not have a shielding cover 110, and can be freely configured according to requirements; this embodiment of the present invention is not limited thereto.

[0041] The semiconductor package assembly 500C can also increase the area of ​​the heat transfer module 230, thereby further improving the heat dissipation speed. In some embodiments, the cover 232, the extension 234, and the support 236 can be an integral structure rather than a separate structure to improve the structural stability of the semiconductor package assembly 500C.

[0042] Figure 4 This is a cross-sectional view of a semiconductor packaging assembly 500D according to further embodiments of the present invention. For the sake of brevity, the embodiments described below are consistent with those previously referenced. Figure 3Components that are identical or similar to those described will not be repeated. The differences between semiconductor package assembly 500C and semiconductor package assembly 500D include at least that the support portion 236 of the heat transfer module 230 of semiconductor package assembly 500D can be mounted or fixed to the upper surface 100T of circuit board 100 via bolts and nuts 206, to ensure the stability of the heat transfer module 230 and the subsequently installed heat dissipation module 300. In some embodiments, circuit board 100 may or may not have a shielding cover 110, and can be freely configured according to requirements; this embodiment of the present invention is not limiting.

[0043] The semiconductor package assembly 500D can also increase the area of ​​the heat transfer module 230, thereby further improving the heat dissipation speed. In some embodiments, the cover 232, the extension 234, and the support 236 can be an integral structure rather than a separate structure to improve the structural stability of the semiconductor package assembly 500C.

[0044] This invention provides a semiconductor packaging assembly. The semiconductor packaging assembly includes: a first thermal interface material layer disposed on a semiconductor chip; a heat transfer module disposed on the first thermal interface material layer; a second thermal interface material layer disposed on the heat transfer module; and a heat dissipation module disposed on the second thermal interface material layer. The heat from the semiconductor chip can be quickly transferred through the first thermal interface material layer to the heat transfer module, and then dissipated through the heat dissipation module. With a larger heat dissipation area, the semiconductor packaging assembly of this invention can more efficiently and reliably transfer the heat from the chip to the external environment, exhibiting high heat dissipation efficiency.

[0045] Furthermore, the heat transfer module is made of materials including copper alloys, aluminum alloys, titanium alloys, or combinations thereof. These metal materials can improve heat conduction efficiency and can fully and tightly adhere to the upper and lower first and second thermal interface material layers to accelerate heat conduction.

[0046] Furthermore, the first thermal interface material layer and the second thermal interface material layer respectively comprise thermally conductive gel, thermally conductive silicone grease, phase change sheet, thermal pad, or a combination thereof. These materials of the thermal interface material layers can help dissipate heat quickly and improve heat dissipation efficiency. The materials of the first thermal interface material layer and the second thermal interface material layer can be the same or different to adapt to different manufacturing and heat dissipation requirements.

[0047] Furthermore, the thickness of the first thermal interface material layer is between 0.03 and 0.3 mm, and the thickness of the second thermal interface material layer is between 0.2 and 0.6 mm. This allows the first thermal interface material layer to be manufactured thinner, thereby further improving heat dissipation efficiency.

[0048] Furthermore, the thickness of the first thermal interface material layer is between 0.03 and 0.1 mm. Making the first thermal interface material layer thinner further improves heat dissipation efficiency.

[0049] Furthermore, the area of ​​the heat transfer module can be greater than or equal to the area of ​​the first thermal interface material layer and / or the area of ​​the semiconductor chip, thereby improving heat dissipation efficiency.

[0050] Furthermore, the thickness of the first thermal interface material layer is less than the thickness of the second thermal interface material layer. Making the first thermal interface material layer thinner further improves heat dissipation efficiency.

[0051] Furthermore, the heat transfer module includes a cover, and the extension protrudes from the sidewall of the cover and extends in a direction substantially parallel to the upper surface of the semiconductor chip. The cover completely covers the first thermal interface material layer. This allows the heat transfer module to have sufficient and large-area contact with the first thermal interface material layer, thereby increasing the heat transfer area.

[0052] Furthermore, the heat transfer module also includes an extension connected to the cover, which protrudes from the sidewall of the cover, and the second interface material layer completely covers the cover and the extension. This results in a larger heat dissipation area for the heat transfer module and a larger heat dissipation contact surface between the second interface material layer and the heat transfer module, thereby improving heat dissipation efficiency.

[0053] Furthermore, a shielding cover is mounted on the circuit board, the shielding cover having an opening, and at least a portion of the cover, the first thermal interface material layer, and the semiconductor chip are disposed within the opening. The shielding cover not only protects the semiconductor chip and related components, but also protects the mounting stability of these components, as well as protecting other components mounted on the circuit board, such as radio frequency components, from interference.

[0054] Furthermore, the extension is mounted on the shielding cover. This allows for more stable installation of the heat transfer module and improves the structural stability of the semiconductor packaging assembly.

[0055] Furthermore, the heat transfer module also includes a support portion connected to the extension, which extends in a direction substantially perpendicular to the upper surface of the semiconductor chip. The support portion is connected to the circuit board and surrounds the sidewalls of the semiconductor chip and the cover. This further improves the stability of the heat transfer module's installation and enhances the structural stability of the semiconductor package assembly.

[0056] Furthermore, fasteners are provided between the support and the circuit board to ensure stability during the installation of the heat transfer module and improve the structural stability of the semiconductor packaging assembly.

[0057] Furthermore, the side or top surface of the semiconductor chip includes a metal layer, and there are solder joints between the heat transfer module and the metal layer of the semiconductor chip. This allows for a stable connection between the heat transfer module and the semiconductor chip, and ensures that the first thermal interface material layer is tightly and closely disposed between the heat transfer module and the semiconductor chip.

[0058] Furthermore, this semiconductor packaging assembly is installed in a motor vehicle. Environmental factors such as temperature in automobiles and other motor vehicles can vary significantly. The semiconductor packaging assembly of this embodiment has higher heat dissipation efficiency and a more stable structure, making it more suitable for use in motor vehicles operating in harsh environments.

[0059] While the present invention has been described by way of example and according to preferred embodiments, it should be understood that the present invention is not limited to the disclosed embodiments. Rather, it is intended to cover various modifications and similar arrangements (as will be apparent to those skilled in the art). Therefore, the scope of the appended claims should be given the broadest interpretation to cover all such modifications and similar arrangements.

Claims

1. A semiconductor packaging component, characterized in that, include: The first thermal interface material layer is disposed on a semiconductor chip; The heat transfer module is located on the first thermal interface material layer; A second thermal interface material layer is disposed on the heat transfer module; as well as The heat dissipation module is disposed on the second thermal interface material layer.

2. The semiconductor packaging assembly as claimed in claim 1, characterized in that, The heat transfer module is made of copper alloy, aluminum alloy, titanium alloy, or a combination thereof.

3. The semiconductor packaging assembly as described in claim 1, characterized in that, The first thermal interface material layer and the second thermal interface material layer respectively include thermally conductive gel, thermally conductive silicone grease, phase change sheet, thermally conductive pad or combination thereof.

4. The semiconductor packaging assembly as claimed in claim 1, characterized in that, The thickness of the first thermal interface material layer is between 0.03 and 0.3 mm, and the thickness of the second thermal interface material layer is between 0.2 and 0.6 mm.

5. The semiconductor packaging assembly as claimed in claim 1, characterized in that, The area of ​​the heat transfer module is greater than or equal to the area of ​​the first thermal interface material layer and / or the area of ​​the semiconductor chip.

6. The semiconductor packaging assembly as claimed in claim 1, characterized in that, The heat transfer module includes a cover and an extension connected to the cover. The cover completely covers the first thermal interface material layer. The extension protrudes from the sidewall of the cover and extends in a direction substantially parallel to the upper surface of the semiconductor chip. The second thermal interface material layer completely covers the cover and the extension.

7. The semiconductor packaging assembly as claimed in claim 6, characterized in that, The semiconductor chip is mounted on a circuit board, on which a shielding cover is mounted. The shielding cover has an opening, at least a portion of the cover, the first thermal interface material layer, and the semiconductor chip are disposed within the opening, and the extension is mounted on the shielding cover.

8. The semiconductor packaging assembly as claimed in claim 7, characterized in that, The heat transfer module also includes a support portion connected to the extension portion, the support portion extending in a direction substantially perpendicular to the upper surface of the semiconductor chip, the support portion being connected to the circuit board and surrounding the sidewalls of the semiconductor chip and the cover portion.

9. The semiconductor packaging assembly as claimed in claim 8, characterized in that, The support is secured to the circuit board with fasteners.

10. The semiconductor packaging assembly as claimed in claim 1, characterized in that, The side or top surface of the semiconductor chip includes a metal layer, and the heat transfer module has solder joints with the metal layer of the semiconductor chip.

11. The semiconductor packaging assembly as claimed in claim 1, characterized in that, The semiconductor packaging assembly is installed in a motor vehicle.

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