Small volume rectifier bridge

CN224852568UActive Publication Date: 2026-10-13GUANGDONG RUISONG ELECTRONIC TECH CO LTD
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Patent Information

Application Number
CN202522380947.6
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-11-08
Publication Date
2026-10-13
Estimated Expiration
2035-11-08

AI Technical Summary

Technical Problem

[0003]但是,上述结构的整流桥,仍存在以下不足之处:(1)上述的铝基板与框架之间存在距离,这会影响框架到铝基板之间的导热,不利于框架上二极管芯片的散热;再有,铝基板背对框架的一侧与空气接触的面积有限,即:铝基板背对框架的一侧导热至空气的能力有限,铝基板的散热效果差

Benefits of technology

(1)此款小体积整流扁桥,通过在金属基板的绝缘导热层上设置金属层,且金属层和整流框架之间通过焊锡层固定在一起,一方面,金属层和焊锡层的导热能较好,整流框架上二极管芯片产生的热量能快速通过焊锡层和金属层传递至金属基板上,另一方面,金属层和焊锡层也能提高整流框架整体的过电流能力,满足工作时一些瞬间大电流的使用需求;再有,金属基板的后壁上开有散热槽,散热槽能很好地增加金属基板的后壁与空气的接触面积,以使传递至金属基板上的热量通过散热槽快速高效散热至空气中,提高产品整体的散热效果。

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Abstract

The utility model discloses a kind of small volume rectifier flat bridges, including metal substrate, rectifier frame and packaging shell, several diode chips are installed in rectifier frame side, it is characterized in that, the front wall of metal substrate is provided with insulating heat conduction layer, metal layer is provided on insulating heat conduction layer, rectifier frame other side is fixedly connected on metal layer by soldering tin layer, packaging shell wraps rectifier frame, the front wall and side wall of metal substrate, the plurality of pins of rectifier frame lower part is exposed to packaging shell downwards, the rear wall of metal substrate is opened with heat dissipation groove;This small volume rectifier flat bridge, by setting metal layer on the insulating heat conduction layer of metal substrate, and metal layer and rectifier frame are fixed together by soldering tin layer, metal layer and soldering tin layer improve the heat conduction capacity and overcurrent capacity of rectifier frame;In addition, heat dissipation groove can well increase the contact area of the rear wall of metal substrate and air, improve the overall heat dissipation effect of product.
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Description

Technical Field

[0001] This utility model relates to the field of rectifier bridge technology, and in particular to a small-volume rectifier flat bridge. Background Technology

[0002] The existing rectifier bridge, as seen in Chinese Utility Model Patent CN203631532U, entitled "Semiconductor Rectifier Bridge," with an authorization announcement date of June 4, 2014, includes a plastic encapsulation, a frame for fixing diodes, and an aluminum substrate. The aluminum substrate is disposed on the frame, and the frame and aluminum substrate are connected as a whole by the plastic encapsulation, with the distance between the aluminum substrate and the frame being less than 1 mm. This utility model, while ensuring its insulation performance, can effectively reduce the thermal resistivity of the semiconductor rectifier bridge, increase its power density, and enable the maximum output current of the semiconductor rectifier bridge to reach 50A.

[0003] However, the above-mentioned rectifier bridge still has the following shortcomings: (1) There is a distance between the aluminum substrate and the frame, which will affect the heat conduction between the frame and the aluminum substrate and is not conducive to the heat dissipation of the diode chip on the frame; in addition, the area of ​​the aluminum substrate facing away from the frame that is in contact with the air is limited, that is, the ability of the aluminum substrate facing away from the frame to conduct heat to the air is limited, and the heat dissipation effect of the aluminum substrate is poor. Utility Model Content

[0004] The purpose of this utility model is to overcome the shortcomings of the existing technology and provide a small-volume rectifier flat bridge that improves thermal conductivity and overcurrent capability, while also providing better overall heat dissipation.

[0005] The purpose of this utility model is achieved as follows: A small-volume rectifier bridge includes a metal substrate, a rectifier frame, and a package housing. Several diode chips are mounted on one side of the rectifier frame. The key feature is that an insulating and thermally conductive layer is disposed on the front wall of the metal substrate, and a metal layer is disposed on the insulating and thermally conductive layer. The other side of the rectifier frame is fixedly connected to the metal layer via a solder layer. The package housing encloses the rectifier frame, the front wall, and the side walls of the metal substrate. Multiple pins at the bottom of the rectifier frame protrude downwards from the package housing. A heat dissipation groove is formed on the rear wall of the metal substrate. This small-volume rectifier bridge achieves its effect by disposing a metal layer on the insulating and thermally conductive layer of the metal substrate, and the metal layer and the rectifier frame... The frames are fixed together by solder layers. On the one hand, the metal layer and solder layer have good thermal conductivity, and the heat generated by the diode chip on the rectifier frame can be quickly transferred to the metal substrate through the solder layer and metal layer. On the other hand, the metal layer and solder layer can also improve the overall overcurrent capacity of the rectifier frame, meeting the needs of some instantaneous high current use during operation. In addition, there are heat dissipation grooves on the back wall of the metal substrate. The heat dissipation grooves can effectively increase the contact area between the back wall of the metal substrate and the air, so that the heat transferred to the metal substrate can be quickly and efficiently dissipated to the air through the heat dissipation grooves, improving the overall heat dissipation effect of the product.

[0006] The objective of this utility model can also be achieved by the following technical measures: Furthermore, the rear wall of the metal substrate is provided with a recess and a heat sink, and the heat sink is located on the inner periphery of the recess. The heat sink has the heat dissipation groove. The encapsulation shell covers the recess, and the end face of the heat sink and the rear end face of the encapsulation shell are on the same vertical plane. This allows the metal substrate to be well wrapped and fixed by the encapsulation shell, which is beneficial to the stable operation of the rectifier frame on the metal substrate. In addition, the heat sink provides a stable carrier for the heat dissipation groove, which facilitates the stable heat dissipation of the metal substrate.

[0007] Specifically, the heat sink has an outer ring recess, multiple vertical recesses, and multiple horizontal recesses. The vertical and horizontal recesses are arranged perpendicularly to each other. The two ends of the vertical recesses are connected to the outer ring recess, and the two ends of the horizontal recesses are also connected to the outer ring recess. A heat dissipation protrusion is located between adjacent outer ring recesses, vertical recesses, and horizontal recesses on the heat sink. The outer ring recess, the vertical recesses, and the horizontal recesses constitute the heat dissipation groove. The bottom surfaces of the outer ring recesses, the vertical recesses, the horizontal recesses, the end faces of the heat dissipation protrusions, and the multiple sidewalls can all contact the air, greatly increasing the contact area between the heat dissipation groove and the air, and thus significantly improving the heat dissipation effect of the heat dissipation groove.

[0008] Specifically, the rectifier frame includes a frame body for mounting the diode chip and multiple pins. The cross-section of the frame body is the same as the cross-section of the solder layer and the metal layer, which facilitates rapid heat transfer between the frame body and the solder layer and the metal layer.

[0009] Specifically, the metal substrate is an aluminum substrate, and the metal layer is a copper foil layer.

[0010] Specifically, the insulating and thermally conductive layer is a polymer of aluminum hydroxide and epoxy resin.

[0011] Specifically, the insulating and thermally conductive layer is a polymer of silicon dioxide and epoxy resin.

[0012] The beneficial effects of this utility model are as follows: (1) This small-volume rectifier flat bridge has a metal layer on the insulating and thermally conductive layer of the metal substrate, and the metal layer and the rectifier frame are fixed together by a solder layer. On the one hand, the metal layer and the solder layer have good thermal conductivity, and the heat generated by the diode chip on the rectifier frame can be quickly transferred to the metal substrate through the solder layer and the metal layer. On the other hand, the metal layer and the solder layer can also improve the overall overcurrent capability of the rectifier frame, and meet the needs of some instantaneous high current during operation. In addition, there is a heat dissipation groove on the back wall of the metal substrate. The heat dissipation groove can effectively increase the contact area between the back wall of the metal substrate and the air, so that the heat transferred to the metal substrate can be quickly and efficiently dissipated to the air through the heat dissipation groove, thereby improving the overall heat dissipation effect of the product.

[0013] (2) The metal substrate is well wrapped and fixed by the encapsulation shell, which is conducive to the stable operation of the rectifier frame on the metal substrate; in addition, the heat sink provides a stable carrier for the heat sink, which facilitates the stable heat dissipation of the metal substrate.

[0014] (3) The bottom surface of the outer ring recess, the bottom surface of the vertical recess, the bottom surface of the horizontal recess, the end face of the heat dissipation protrusion, and multiple side walls can all be in contact with the air, greatly increasing the contact area between the heat dissipation groove and the air, which can greatly improve the heat dissipation effect of the heat dissipation groove. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the small-volume rectifier flat bridge of this utility model.

[0016] Figure 2 This is a schematic diagram of the small-volume rectifier flat bridge of this utility model without its encapsulation shell.

[0017] Figure 3 for Figure 2 Cross-sectional view.

[0018] Figure 4 for Figure 3 Enlarged view of point A. Detailed Implementation

[0019] The present patent will be further described below with reference to the accompanying drawings and embodiments: The accompanying drawings are for illustrative purposes only and are schematic diagrams, not actual pictures, and should not be construed as limiting the present patent; In order to better illustrate the embodiments of the present patent, some parts in the drawings may be omitted, enlarged or reduced, and do not represent the actual product size; It is understandable to those skilled in the art that some well-known structures and their descriptions may be omitted in the drawings.

[0020] The terms "first," "second," etc., used in this patent do not indicate any order, quantity, or importance, but are merely for distinction. The terms "one," "a kind," etc., used in this patent do not indicate a limitation on quantity, but rather indicate the presence of at least one of the mentioned objects. The terms indicating direction or location used in this patent, such as "top," "bottom," "side," "longitudinal," "lateral," "middle," "center," "outer," "inner," "horizontal," "vertical," "left," "right," "above," "below," etc., reflect relative positions, not absolute positions; those skilled in the art can understand the specific meaning of these terms according to the specific circumstances.

[0021] Implementation examples, in conjunction with Figures 1 to 4 As shown, a small-volume rectifier flat bridge includes a metal substrate 1, a rectifier frame 2, and a package shell 3. Several diode chips 21 are mounted on one side of the rectifier frame 2. The metal substrate 1 has an insulating and thermally conductive layer 4 on its front wall, and a metal layer 5 is disposed on the insulating and thermally conductive layer 4. The other side of the rectifier frame 2 is fixedly connected to the metal layer 5 by a solder layer 6. The package shell 3 covers the rectifier frame 2, the front wall and the side wall of the metal substrate 1. Multiple pins 22 at the bottom of the rectifier frame 2 protrude downwards from the package shell 3. A heat dissipation groove 11 is opened on the rear wall of the metal substrate 1.

[0022] As a specific solution, the rear wall of the metal substrate 1 is also provided with a recess 12 and a heat sink 13, and the heat sink 13 is located on the inner periphery of the recess 12. The heat sink 13 has the heat dissipation groove 11. The encapsulation shell 3 covers the recess 12, and the end face of the heat sink 13 and the rear end face of the encapsulation shell 3 are located on the same vertical plane.

[0023] In this embodiment, the heat sink 13 has an outer ring recess 111, multiple vertical recesses 112, and multiple horizontal recesses 113. The multiple vertical recesses 112 and the multiple horizontal recesses 113 are arranged perpendicularly to each other. The two ends of the multiple vertical recesses 112 are connected to the outer ring recess 111, and the two ends of the multiple horizontal recesses 113 are connected to the outer ring recess 111. A heat dissipation protrusion 7 is provided on the heat sink 13 between adjacent outer ring recesses 111, vertical recesses 112, and horizontal recesses 113. The outer ring recess 111, the multiple vertical recesses 112, and the multiple horizontal recesses 113 constitute the heat dissipation groove 11.

[0024] As a more specific embodiment, the rectifier frame 2 includes a frame body 23 for mounting the diode chip 21 and multiple pins 22. The cross-section of the frame body 23 is the same as the cross-section of the solder layer 6 and the cross-section of the metal layer 5.

[0025] As a more specific embodiment, the metal substrate 1 is an aluminum substrate, and the metal layer 5 is a copper foil layer.

[0026] In this embodiment, the insulating and thermally conductive layer 4 is a polymer of aluminum hydroxide and epoxy resin.

[0027] As another embodiment of the insulating and thermally conductive layer 4, the insulating and thermally conductive layer 4 is a polymer of silicon dioxide and epoxy resin.

[0028] The rectifier flat bridge described in this patent is mainly used in small-volume rectifier flat bridge products, and its size and appearance are consistent with the small-volume flat bridge with a 3.81mm pitch on the market.

[0029] The embodiments described above are merely examples for clearly illustrating this patent, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this patent, and these all fall within the scope of protection of this patent. Therefore, the scope of protection of this patent should be determined by the appended claims.

Claims

1. A small-volume rectifier bridge, comprising a metal substrate (1), a rectifier frame (2), and a package housing (3), wherein a plurality of diode chips (21) are mounted on one side of the rectifier frame (2), characterized in that, The front wall of the metal substrate (1) is provided with an insulating and heat-conducting layer (4), and a metal layer (5) is provided on the insulating and heat-conducting layer (4). The other side of the rectifier frame (2) is fixedly connected to the metal layer (5) through a solder layer (6). The package shell (3) covers the front wall and side wall of the rectifier frame (2) and the metal substrate (1). Multiple pins (22) at the bottom of the rectifier frame (2) protrude downwards from the package shell (3). A heat dissipation groove (11) is opened on the rear wall of the metal substrate (1).

2. The small-volume rectifier flat bridge according to claim 1, characterized in that, The metal substrate (1) is further provided with a recess (12) and a heat sink (13) on its rear wall. The heat sink (13) is located on the inner periphery of the recess (12). The heat sink (13) has the heat sink groove (11) on it. The encapsulation shell (3) covers the recess (12). The end face of the heat sink (13) and the rear end face of the encapsulation shell (3) are located on the same vertical plane.

3. The small-volume rectifier flat bridge according to claim 2, characterized in that, The heat sink (13) has an outer ring recess (111), multiple vertical recesses (112) and multiple horizontal recesses (113). The multiple vertical recesses (112) and multiple horizontal recesses (113) are arranged perpendicular to each other. The two ends of the multiple vertical recesses (112) are connected to the outer ring recesses (111), and the two ends of the multiple horizontal recesses (113) are connected to the outer ring recesses (111). There are heat dissipation protrusions (7) on the heat sink (13) between the adjacent outer ring recesses (111), vertical recesses (112) and horizontal recesses (113). The outer ring recesses (111), multiple vertical recesses (112) and multiple horizontal recesses (113) constitute the heat dissipation groove (11).

4. The small-volume rectifier flat bridge according to claim 1, characterized in that, The rectifier frame (2) includes a frame body (23) for mounting the diode chip (21) and multiple pins (22). The cross-section of the frame body (23) is the same as the cross-section of the solder layer (6) and the cross-section of the metal layer (5).

5. The small-volume rectifier flat bridge according to claim 1, characterized in that, The metal substrate (1) is an aluminum substrate, and the metal layer (5) is a copper foil layer.

6. The small-volume rectifier flat bridge according to claim 5, characterized in that, The insulating and thermally conductive layer (4) is a polymer of aluminum hydroxide and epoxy resin.

7. The small-volume rectifier flat bridge according to claim 5, characterized in that, The insulating and thermally conductive layer (4) is a polymer of silicon dioxide and epoxy resin.

Citation Information

Patent Citations

  • Semiconductor rectifier bridge

    CN203631532U