Filtering device and filtering system

Abstract

A filtration apparatus and filtration system are provided. The system includes a first tank operable to store a substrate slurry; a second tank operable to produce a mill slurry comprising a filtered substrate slurry; and a filtration apparatus operable to produce the filtered substrate slurry, wherein the filtration apparatus is operable to receive the substrate slurry from the first tank and output the filtered substrate slurry to the second tank, the filtration apparatus comprising: a housing, wherein an inlet is defined that is connected to a first transfer line; and a first outlet is defined that is connected to a second transfer line; and a filter element having a first end proximate the inlet and a second end proximate the first outlet.

Description

Technical Field

[0001] This disclosure relates to a filtration device and a filtration system. Background Technology

[0002] Semiconductor devices are formed on, within, and / or made from semiconductor wafers and are used in a variety of electronic devices such as mobile phones, laptops, desktop computers, tablets, watches, gaming systems, and various other industrial, commercial, and consumer electronics products. One or more semiconductor processes are performed to form semiconductor devices on, within, and / or on semiconductor wafers. Utility Model Content

[0003] According to some embodiments of this disclosure, a filtration device includes a housing in which an inlet and a first outlet are defined, and a filter element disposed within the housing and extending along a filter element axis, wherein the inlet is located at a first position adjacent to a first end of the filter element and the inlet extends along an inlet axis that is not parallel to the filter element axis, and the first outlet is located at a second position adjacent to a second end of the filter element and the first outlet extends along a first outlet axis that is not parallel to the filter element axis.

[0004] According to some embodiments of this disclosure, a system includes: a first tank operable to store a base slurry; a second tank operable to produce a grinding slurry containing the filtered base slurry; and a filtration device operable to produce the filtered base slurry, wherein the filtration device is operable to receive the base slurry from the first tank and output the filtered base slurry to the second tank, the filtration device including: a housing defining: an inlet connected to a first transmission line; and a first outlet connected to a second transmission line; and a filter element having a first end adjacent to the inlet and a second end adjacent to the first outlet.

[0005] To make the above-described features and advantages of this disclosure more apparent and understandable, specific embodiments are described below in conjunction with the accompanying drawings. Attached Figure Description

[0006] The various aspects of this disclosure are best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with industry standard practice, the various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of explanation.

[0007] Figure 1 This illustration shows a perspective view of a system including a grinding apparatus according to some embodiments.

[0008] Figure 2 This illustration shows a perspective view of a liquid delivery system including a filtration device according to some embodiments.

[0009] Figure 3A This illustration shows a cross-sectional perspective view of the filtration device relative to other components of the liquid delivery system, according to some embodiments.

[0010] Figure 3B This illustration shows a cross-sectional perspective view of the filtration device relative to other components of the liquid delivery system, according to some embodiments.

[0011] Figure 3C This illustration shows a cross-sectional perspective view of the filtration device relative to other components of the liquid delivery system, according to some embodiments.

[0012] Figure 3D This illustration shows a cross-sectional perspective view of the filtration device relative to other components of the liquid delivery system, according to some embodiments.

[0013] Figure 3E This illustration shows a cross-sectional perspective view of a filtration device in operation according to some embodiments, relative to other components of the liquid delivery system.

[0014] Figure 3F This illustrates a plan view of the filtration device relative to other components of the liquid delivery system according to some embodiments.

[0015] Figure 3G This illustrates a plan view of the filtration device relative to other components of the liquid delivery system according to some embodiments.

[0016] Figure 4 This diagram illustrates the correlation between particle distribution in the process liquid according to some embodiments.

[0017] Figure 5 A plan view illustrating the operation of a filtration device according to some embodiments.

[0018] Figure 6 This is a three-dimensional schematic diagram illustrating a portion of a liquid supply system according to some embodiments.

[0019] Figure 7 This diagram illustrates a slurry transport monitoring system based on some embodiments.

[0020] Figure 8 A flowchart illustrating a method for operating a filtration device and / or a slurry delivery monitoring system according to some embodiments.

[0021] Figure 9 A flowchart illustrating a method according to some embodiments.

[0022] Figure 10 A flowchart illustrating a method according to some embodiments.

[0023] Figure 11The description describes an example computer-readable medium according to some embodiments, which may contain processor-executable instructions configured to embody one or more of the specifications described herein.

[0024] Explanation of reference numerals in the attached figures

[0025] 100, 200: System

[0026] 102: Pad Adjuster

[0027] 104: Pad Adjuster Support Arm

[0028] 105: Oscillating element

[0029] 106: Head carrier

[0030] 107: Pad Adjuster Head

[0031] 108: Pad Adjuster Support Column

[0032] 110: Platform

[0033] 114: Cleaning Cup

[0034] 115: Liquid

[0035] 117: Chamber

[0036] 120: Grinding pad

[0037] 121: Grinding surface

[0038] 122: Slurry Supply Unit

[0039] 123: Slurry outlet

[0040] 124: Grinding head support column

[0041] 125: Slurry supply arm

[0042] 126: Chip Hold-Up Portfolio

[0043] 128: Chip Holder

[0044] 130: Grinding head

[0045] 132: First Semiconductor Wafer

[0046] 134: Slurry

[0047] 140: Support column

[0048] 150: Shaft

[0049] 152: Direction

[0050] 154: First rotation direction

[0051] 156: Second rotation direction

[0052] 158: Third rotation direction

[0053] 160: Grinding equipment

[0054] 210: Base Liquid Supply Subsystem

[0055] 212, 214: Slurry tank

[0056] 216: Pump

[0057] 218, 300, 306, 308: Filtration equipment

[0058] 220: Hybrid Subsystem

[0059] 221, 225: Mixing tank

[0060] 222, 224, 226, 228: Component slots

[0061] 229: Quality Measuring Instrument

[0062] 229: Feedback Component

[0063] 230: Buffer Subsystem

[0064] 232, 234: Buffer slots

[0065] 240: Supply Subsystem

[0066] 242,244: Supply tank

[0067] 300: Filter

[0068] 310: Main body, shell

[0069] 312,314,316: wall

[0070] 313: Entrance

[0071] 313,315,318,322,530: Opening

[0072] 315,670,317: Exports

[0073] 317, 319, 315: Second Exit

[0074] 320: Filter element

[0075] 324: First end

[0076] 325: First side

[0077] 326: Second end

[0078] 327: Second side

[0079] 330, 340: Second transmission lines

[0080] 342, 344: Third transmission line

[0081] 360°: Spiral swept flow field

[0082] 382: Entry Shaft

[0083] 383, 385: Tangent axis

[0084] 384: First Exit Shaft

[0085] 386: Filter element shaft

[0086] 388: Second Exit Shaft

[0087] 390, 680: Base slurry

[0088] 392: First base slurry

[0089] 394: Second base slurry

[0090] 400: Allocation

[0091] 410: First Group

[0092] 420: Second Group

[0093] 430: Peak value

[0094] 450: Line

[0095] 510, 520: Particles

[0096] 600: Base slurry supply subsystem

[0097] 602, 604, 606, 608, 610, 612: Valves

[0098] 620: First Flow Meter

[0099] 620, 622: Second flow meter

[0100] 622: Second Flow Meter

[0101] 630: Vent

[0102] 640, 660: Drainage outlet

[0103] 700: Filtration Monitoring System

[0104] 700: Slurry Transport Monitoring System

[0105] 702: Facilities and Equipment

[0106] 704: Filter monitoring device

[0107] 706: Filtration Equipment Status Alarm System

[0108] 708: Client Device

[0109] 710: First Signal

[0110] 712: Monitoring Signal

[0111] 714: Computer

[0112] 716: Third Signal

[0113] 718: Second Signal

[0114] 720: Display Panel

[0115] 806: Base Slurry Supply Process

[0116] 808: Alarm function and / or reverse cleaning function

[0117] 810: Slurry Filtration

[0118] 812: Traffic Flow Judgment

[0119] 814: Ready to start the process

[0120] 1000, 1102, 800, 900: Method

[0121] 1100: Example

[0122] 1104: Processor-executable computer instructions

[0123] 1108: Computer-readable media

[0124] D1: First Distance

[0125] D1, D2, D3: Distance

[0126] D2: Second distance Detailed Implementation

[0127] The following disclosure provides several different embodiments or instances for implementing various features of the provided subject matter. Specific examples of elements and arrangements are described below to simplify this disclosure. Of course, these elements and arrangements are merely examples and are not intended to be limiting. For example, in the following description, the formation of a first feature over or on a second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where additional features may be formed between the first and second features such that the first and second features are not in direct contact. Furthermore, reference numerals and / or letters may be repeated in various instances of this disclosure. Such repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0128] Furthermore, for ease of description, spatially related terms such as “below,” “under,” “lower,” “above,” and “upper” may be used herein to describe the relationship between one element or feature and another, as shown in the figures. In addition to the orientations depicted in the figures, spatially related terms are intended to cover different orientations of the device during use or operation. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptive terms used herein shall be interpreted accordingly.

[0129] The terms "overlying" and / or similar terms can be used to describe an element or feature that overlaps with another element or feature in the vertical direction and is located at a higher height than the other element or feature. For example, if a first element is located at a higher height than a second element, and at least a portion of the first element overlaps with at least a portion of the second element in the vertical direction, then the first element overlaps the second element.

[0130] The term "underlying" and / or similar terms can be used to describe an element or feature that overlaps vertically with another element or feature and is at a lower height than the other element or feature. For example, if a first element is at a lower height than a second element, and at least a portion of the first element overlaps vertically with at least a portion of the second element, then the first element is underlying the second element.

[0131] The term "above" can be used to describe a component or feature that is at a higher height than another component or feature. For example, if the first component is at a higher height than the second component, then the first component is above the second component.

[0132] The term "below" can be used to describe an element or feature that is at a lower height than another element or feature. For example, if the first element is at a lower height than the second element, then the first element is below the second element.

[0133] With advancements in chemical mechanical polishing (CMP), removing large-diameter particles from CMP slurries to avoid scratching has become increasingly beneficial. Vertical filters are facing challenges in overcoming low filtration efficiency and particle diameter bottlenecks. For example, a comprehensive analysis using flow field software simulations and actual slurry filtration examples reveals that vertical filtration tends to generate vertical filtration flow fields, leading to the introduction of large particles into the filter elements, causing blockage and reduced filtration performance. The filter elements capture large particles from the polishing fluid, but these large particles may dislodge once the filter elements reach adsorption saturation.

[0134] Embodiments of this disclosure generate a spiral sweeping flow field in the substrate slurry flowing through a filtration apparatus containing vertical filter elements. Inlet and outlet fluid locations defined within the filter housing eliminate the vertical flow field while simultaneously generating the spiral sweeping flow field. The spiral inertial force ejects large particles outwards, making them easier to remove through the outlet. These large particles are returned to the substrate slurry storage tank to improve filtration efficiency and reduce the number of large particles in the abrasive slurry. Spiral sweeping flow filtration can extend the service life of the filter elements. A filter element backwash function may also be included to clean the filter elements, achieving a superior flow rate of the filtered substrate slurry exiting the filtration apparatus.

[0135] Figure 1 This describes a system 100 including a grinding apparatus 160 according to some embodiments. Figure 2 This describes a liquid supply system (or “base slurry supply system,” “slurry supply system,” or “system”) 200 that can supply slurry to system 100 according to some embodiments. In some embodiments, polishing apparatus 160 is configured to perform a first polishing process to polish a first semiconductor wafer 132. In some embodiments, the first polishing process includes a chemical mechanical planarization (CMP) process. In some embodiments, polishing apparatus 160 includes CMP tools. In some embodiments, the first polishing process is performed to homogenize and / or planarize a first surface of the first semiconductor wafer 132 using a combination of chemical and mechanical forces. Embodiments of polishing articles other than semiconductor wafers using polishing apparatus 160 are considered. The polishing system 100 and liquid supply system 200 are described in detail to provide background for understanding references. Figures 2-11 Examples of the described abrasive material filtration (or "filtration") system and related methods.

[0136] In some embodiments, the polishing apparatus 160 includes at least one of the following: a stage 110 for supporting a polishing pad 120, the polishing pad 120 being rotatable by the stage 110; a polishing head 130 for supporting a first semiconductor wafer 132 at a polishing position relative to the polishing surface 121 of the polishing pad 120 for polishing the first semiconductor wafer 132; a pad conditioner 102 for conditioning the polishing pad 120; or a slurry supplier 122 for supplying slurry 134 to the polishing surface 121 of the polishing pad 120. The slurry 134 may also be referred to as "polishing material," although it is typically a slurry, but may also be other suitable liquid polishing materials or compositions that can be filtered. Figure 1 A first semiconductor wafer 132 is depicted in a polishing position according to some embodiments.

[0137] In some embodiments, the first semiconductor wafer 132 includes at least one of the following: a substrate, a photomask, a semiconductor device, a dielectric layer, an epitaxial layer, a silicon-on-insulator (SOI) structure, a semiconductor layer, a conductive material layer, and a die. The first semiconductor wafer 132 includes at least one of the following: silicon, germanium, carbide, arsenide, gallium, arsenic, phosphide, indium, antimonide, silicon germanium (SiGe), silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), gallium phosphide (GaP), indium gallium phosphide (InGaP), indium phosphide (InP), indium arsenide (InAs), indium antimonide (InSb), gallium arsenide (GaAsP), aluminum indium arsenide (AlInAs), aluminum gallium arsenide (AlGaAs), gallium indium arsenide (GaInAs), gallium indium phosphide (GaInP), gallium indium arsenide (GaInAsP), or other suitable materials. The first semiconductor wafer 132 includes at least one of the following: single-crystal silicon, having... <100> Crystalline silicon, with crystallographic properties <110> Crystalline silicon with crystal orientation <111> Crystalline silicon or other suitable materials with crystal orientation. Other structures and / or configurations of the first semiconductor wafer 132 are within the scope of this disclosure. In some embodiments, a first polishing process performed using polishing equipment 160 polishes a first surface of the first semiconductor wafer 132, including at least one of the following: a substrate surface, a photomask surface, a semiconductor device surface, a dielectric layer surface, an epitaxial layer surface, an SOI structure surface, a semiconductor layer surface, a conductive material layer surface, etc.

[0138] In some embodiments, the polishing pad 120 is configured to be driven by the stage 110 to rotate about an axis 150 in a first rotational direction 154. In some embodiments, the polishing pad 120 and the stage 110 rotate synchronously about an axis 150 in the first rotational direction 154. In some embodiments, the stage 110 is rotated using a first drive mechanism (not shown) (e.g., a motor for driving a cylinder 140 coupled to the stage 110) to rotate the polishing pad 120 about an axis 150.

[0139] In some embodiments, the slurry supply 122 includes at least one of a slurry supply arm 125 or a slurry outlet 123. In some embodiments, the slurry outlet 123 includes a nozzle. In some embodiments, the slurry supply arm 125 controls the position of the slurry outlet 123 relative to the grinding surface 121 of the grinding pad 120 while supplying slurry 134 to the grinding surface 121 of the grinding pad 120. In some embodiments, the slurry supply 122 is connected to a reference... Figures 2-6 The slurry supply system 200 is described. The slurry supply system 200 includes slurry 134, which is conveyed from the slurry supply system 200 to a slurry outlet 123 for application onto an abrasive pad 120. In some embodiments, the slurry 134 comprises a liquid containing at least one or more abrasive particles or one or more active chemical substances.

[0140] The slurry 134 may include one or more base slurries, diluents, and additives mixed in a mixing container before being conveyed to the slurry outlet 123. As will be described in more detail below, the base slurry may include working or “grinding” particles (or “first particles”) and large particles (or “second particles”). The working particles are smaller than the large particles and are sized to facilitate grinding the first surface of the first semiconductor wafer 132. The size of the large particles may damage the first surface, which may lead to reduced semiconductor device performance or failure of the first semiconductor wafer 132. Removing the large particles helps improve the wafer processing yield of the system 100.

[0141] The polishing pad 120 comprises a porous material, such as porous polyurethane foam. Other materials for the polishing pad 120 are within the scope of this disclosure. In some embodiments, the polishing pad 120 is at least (i) harder than a first threshold hardness to allow at least one of the polishing pad 120 or slurry 134 to polish the first surface of the first semiconductor wafer 132, such as through mechanical and / or chemical polishing, or (ii) softer than a second threshold hardness to mitigate scratching of the first surface of the first semiconductor wafer 132. In some embodiments, the polishing pad 120 is detachably coupled to the stage 110. In some embodiments, the polishing pad 120 is coupled to the stage 110 using an adhesive.

[0142] In some embodiments, the polishing head 130 includes at least one of a wafer holder 128, a polishing head cylinder 124, or a wafer holder union 126 between the wafer holder 128 and the polishing head cylinder 124. In some embodiments, the polishing head 130 applies a wafer polishing force to the first semiconductor wafer 132 in a direction 152 toward the polishing pad 120. In some embodiments, the direction 152 of the wafer polishing force is approximately parallel to axis 150. In some embodiments, the first semiconductor wafer 132 is in contact with the polishing surface 121 when the first semiconductor wafer 132 is in a polishing position relative to the polishing surface 121. In some embodiments, the polishing head 130 is configured to rotate at least one of the wafer holder 128 or the first semiconductor wafer 132 in a second rotation direction 156. In some embodiments, the first rotation direction 154 and the second rotation direction 156 are the same rotation direction (e.g., clockwise or counterclockwise). Considering embodiments where the first rotation direction 154 and the second rotation direction 156 are different rotation directions (e.g., one clockwise and the other counterclockwise). In some embodiments, the first semiconductor wafer 132 is rotated by the grinding head 130 using a second drive mechanism (not shown) (e.g., a motor for driving the grinding head support column 124).

[0143] In some embodiments, during the first polishing process, at least one of the following is performed: (i) slurry supplier 122 supplies slurry 134 to polishing surface 121, (ii) the first semiconductor wafer 132 and polishing pad 120 rotate, or (iii) slurry 134 flows between the first semiconductor wafer 132 and polishing pad 120 while the first semiconductor wafer 132 and polishing pad 120 rotate. In some embodiments, the first polishing process polishes the first surface of the first semiconductor wafer 132 by at least one of the following: (i) mechanical force between the abrasive particles of slurry 134 and the first surface of the first semiconductor wafer 132, (ii) mechanical force between the polishing pad 120 and the first surface of the first semiconductor wafer 132, or (iii) chemical reaction between the active chemical substances of slurry 134 and the first surface of the first semiconductor wafer 132.

[0144] In some embodiments, the pad conditioner 102 includes at least one of a pad conditioner support arm 104, a pad conditioner head 107, a head carrier 106 for holding the pad conditioner head 107, a pad conditioner cylinder 108, or an oscillating element 105 between the pad conditioner arm 104 and the pad conditioner cylinder 108, the oscillating element 105 enabling the pad conditioner cylinder 108 to oscillate the pad conditioner support arm 104. In some embodiments, when the pad conditioner 102 is used to adjust the abrasive pad 120, at least one of the pad conditioner support arm 104, the pad conditioner head 107, or the head carrier 106 is positioned on the abrasive pad 120. In some embodiments, the pad conditioner head 107 contacts the abrasive surface 121 of the abrasive pad 120. In some embodiments, the pad conditioner 102 is configured to rotate at least one of the head carrier 106 or the pad conditioner head 107 in a third rotational direction 158. In some embodiments, the first rotation direction 154 and the third rotation direction 158 are the same rotation direction (e.g., clockwise or counterclockwise). Embodiments are considered where the first rotation direction 154 and the third rotation direction 158 are different rotation directions (e.g., one clockwise and the other counterclockwise). In some embodiments, the pad adjuster head 107 is rotated using a third drive mechanism (not shown) of the pad adjuster 102, such as a motor configured to rotate the head carrier 106.

[0145] In some embodiments, the pad adjuster head 107 is configured to apply a first pad adjusting force to the abrasive pad 120. In some embodiments, the first pad adjusting force is applied to the abrasive pad 120 in a direction 152 toward the abrasive pad 120. In some embodiments, the first pad adjusting force is applied to the abrasive pad 120 using a fourth drive mechanism (not shown) of the pad adjuster 102 (e.g., a motor for moving the pad adjuster head 107 in a (downward) direction 152 and / or an (upward) direction opposite to direction 152). The first pad adjusting force is at least one of the following: (i) between about 0 Newtons and about 150 Newtons, (ii) between about 2 Newtons and about 110 Newtons, or (iii) between about 1 Newton and about 100 Newtons. Other values ​​of the first pad adjusting force are within the range of this disclosure. In some embodiments, the first pad adjusting force corresponds to a downward force of the pad adjuster 102.

[0146] In some embodiments, the pad adjuster support arm 104 is configured to oscillate the head carrier 106 and the pad adjuster head 107. In some embodiments, the pad adjuster support arm 104 uses a fifth drive mechanism (not shown) of the pad adjuster 102 (e.g., a motor coupled to the pad adjuster support post 108) to oscillate the head carrier 106 and the pad adjuster head 107.

[0147] In some embodiments, the pad adjuster head 107 performs a first adjustment process to adjust at least a first portion of the abrasive surface 121 of the abrasive pad 120, wherein at least one of the following is true: (i) the pad adjuster head 107 contacts the abrasive surface 121 of the abrasive pad 120, (ii) the pad adjuster head 107 rotates in a third rotation direction 158, or (iii) the pad adjuster head 107 oscillates along a first oscillation path (not shown). In some embodiments, the first conditioning process includes at least one of the following: (i) planarizing at least a first portion of the polishing surface 121 using the pad conditioner head 107; (ii) removing contaminants from the first portion of the polishing surface 121 using the pad conditioner head 107, wherein the contaminants include byproducts and / or residues of polishing a semiconductor wafer using the polishing pad 120, or byproducts and / or residues of slurry 134 supplied by the slurry supplier 122; (iii) removing defects from the first portion of the polishing surface 121 using the pad conditioner head 107; or (iv) removing a portion of the polishing pad 120 to adjust and / or reduce the thickness of at least a portion of the polishing pad 120.

[0148] In some embodiments, when the pad adjuster 102 is not used to adjust the abrasive pad 120, at least one of the pad adjuster head 107 or head carrier 106 is in a resting position relative to the cleaning cup 114. In some embodiments, the cleaning cup 114 defines a chamber 117 in which liquid 115 is stored. In some embodiments, the liquid 115 includes at least one of water, deionized water, one or more cleaning chemicals, or one or more other suitable substances. In some embodiments, when the pad adjuster head 107 is in the resting position relative to the cleaning cup 114, at least (i) the pad adjuster head 107 is in contact with and / or immersed in the liquid 115, or (ii) at least a portion of the pad adjuster head 107 is located in the chamber 117 defined by the cleaning cup 114.

[0149] Figure 2 The illustration shows a perspective view of a liquid supply system 200 according to some embodiments. The liquid supply system 200 may also be referred to as "system 200". System 200 includes a base liquid supply subsystem 210, a mixing subsystem 220, an optional buffering subsystem 230, and a supply subsystem 240.

[0150] The base liquid supply subsystem 210 contains and supplies a base liquid, which may be a base slurry. The base slurry may be contained in one or more first tanks or "slurry tanks" 212, 214. The base slurry may be delivered to the mixing subsystem 220 via a pipeline network in fluid communication with the mixing subsystem 220 by a pump 216. Before entering the mixing subsystem 220, the base slurry is filtered by a filtration device 218. In operation, the filtration device 218 produces a filtered base slurry by removing large particles from the base slurry, which is beneficial for increasing the yield of semiconductor wafers processed by one or more devices that use a grinding slurry containing the filtered base slurry to grind semiconductor wafers.

[0151] The substrate slurry may include abrasive particles suspended in the liquid. In some embodiments, the abrasive particles or “abrasive” may include one or more of alumina, cerium oxide, or silicon dioxide (e.g., SiO2, CeO2, or the like) in one or more shapes and one or more sizes. In some embodiments, the size of the abrasive particles is the diameter of the abrasive particles (e.g., the maximum diameter of the abrasive particles). In some embodiments, the size of the abrasive particles is in the range of about 1 nanometer (nm) to about 100 nm, for example, about 1 nm to about 10 nm, about 10 nm to about 20 nm, or other suitable ranges. The selection of the size range can be advantageous for abrading semiconductor wafer surfaces with specific material compositions and feature depths. For example, shallower features may benefit from relatively large abrasive particles (e.g., about 10 nm to about 20 nm), while achieving a flat surface may benefit from abrasive particles smaller than about 10 nm.

[0152] In the substrate slurry, silica and cerium oxide particles may not have well-defined geometries, such as spheres or cubes. These shapes may be irregular and may include near-spherical, agglomerates, and irregular shapes. Near-spherical shapes may be associated with molten silica, whose particles may have shapes very close to spheres, but may have some surface defects or variations. Agglomerates can be clusters formed by smaller silica or cerium oxide particles coming together. The size and shape of aggregates may vary depending on the manufacturing process and slurry storage conditions. The aforementioned large particles may be or include these aggregates. Irregular shapes may be associated with cerium oxide particles, such as those that are not synthesized with a selected spherical morphology. Irregular shapes can range from polyhedral structures to slightly elongated shapes.

[0153] Aggregates in the substrate slurry may form due to several factors during manufacturing or storage. Van der Waals forces, weak intermolecular attraction, can cause adjacent silica or cerium oxide particles to stick together, such as in concentrated substrate slurries. Drying or evaporation of the solvent during storage can further promote aggregation as particles move closer together. The surface chemistry of the particles and any additives in the substrate slurry can affect their interactions. Particles may aggregate when surface conditions favor attraction. Abrasive particles experience shear forces when the substrate slurry is mixed or stirred. Shear forces can improve the homogeneity of the substrate slurry, but can also cause particle collisions and potentially stick together, especially when other factors promote aggregation. The substrate slurry may be stored at a selected temperature, such as room temperature. Temperature fluctuations can affect the solubility of additives and the behavior of van der Waals forces, thereby increasing aggregation.

[0154] The number of aggregates in the filtered substrate slurry exiting filtration device 218 is less than that in the substrate slurry entering filtration device 218. The filtered substrate slurry exiting filtration device 218 is then conveyed to mixing subsystem 220.

[0155] The mixing subsystem 220 includes one or more mixing drums 221, 225, in which the grinding slurry is formed, matured, and stored, and then conveyed to one or more buffer subsystems 230 and supply subsystems 240. The mixing subsystem 220 may include one or more component tanks 222, 224, 226, 228, which can store and supply various component materials to the mixing drums 221, 225, respectively. Component tanks 222, 226 can store and supply filtered base slurry to the mixing drums 221, 225, respectively. Component tanks 224, 228 can store and supply deionized (DI) water to the mixing drums 221, 225, respectively. Additional component tanks can store and supply other component materials, such as pH adjusting additives, oxidizing additives (e.g., H2O2), dispersants, bactericides, etc. The mixing subsystem 220 introduces filtered base slurry and other component materials into the mixing drums 221, 225. The filtered base slurry and other component materials can be mixed and then agitated during a selected time period referred to as "aging". The grinding slurry can refer to the aged mixture. The grinding slurry can be transferred from mixing tanks 221, 225 to one or more buffer subsystems 230 and supply subsystems 240. In some embodiments, mixing subsystem 220 includes a feedback component or "quality meter" 229. Quality meter 229 can perform one or more tests on the mixture in mixing tanks 221, 225, possibly including pH testing or other suitable tests.

[0156] In some embodiments, the mixing subsystem 220 includes one or more feedback components 229. The feedback components 229 are located between the output of the mixing subsystem 220 supplying the grinding slurry to the buffer subsystem 230 and the input of the mixing tanks 221, 225. The feedback components 229 may include one or more pumps or valves to control the flow of the grinding slurry back to the mixing tanks 221, 225. The feedback components 229 may include one or more filtration sub-assemblies to remove large particles before the grinding slurry reaches the mixing tanks 221, 225. The feedback components 229 may include one or more sensors, such as particle sensors, pH sensors, etc., to acquire grinding slurry data. The grinding slurry data can be used for one or more operations of the control system 200.

[0157] Buffer subsystem 230 may include one or more buffer tanks or buffer containers 232, 234 in fluid communication with mixing tanks 221, 225. Buffer tanks 232, 234 may hold the grinding slurry received from mixing subsystem 220 before it is delivered to supply subsystem 240. Pumps 236, 238 may be used to pump the grinding slurry from buffer tanks 232, 234 and deliver it to supply subsystem 240, respectively. In some embodiments, buffer subsystem 230 may be omitted, allowing supply subsystem 240 to communicate directly with mixing tanks 221, 225. Including buffer tanks (or multiple buffer tanks) 232, 234 between mixing tanks 221, 225 and supply subsystem 240 in system 200 may provide advantages. Mixing tanks 221, 225 may vary in mixing intensity or time due to factors such as batch size or operator skill. Buffer tanks 232 and 234 provide a holding volume in which the mixed slurry undergoes additional gentle mixing to improve overall volume homogeneity. This improves the uniformity of the distribution of abrasives, additives, and deionized water in the final grinding slurry used in CMP. Withdrawing the mixture from mixing tanks 221 and 225 may cause pulsation or flow rate variations. Buffer tanks 232 and 234 act as reservoirs, mitigating fluctuations and providing improved consistency of the grinding slurry flow to the supply subsystem 240. Over time, denser abrasive particles in the slurry may settle slightly in mixing tanks 221 and 225. Buffer tanks 232 and 234 provide additional holding volume to reduce the settling effect, which improves the uniformity of abrasive concentration in the grinding slurry, and consequently, improves consistency in the CMP process. Buffer tanks 232 and 234 act as buffers to counteract temperature fluctuations that may occur in mixing tanks 221 and 225. This improves the temperature uniformity of the grinding slurry, which is beneficial for factors such as viscosity and dispersant effectiveness. Buffer tanks 232 and 234 can provide additional flexibility to system 200. For example, multiple mixing tanks 221 and 225 can be used to supply a single buffer tank (e.g., buffer tank 232), allowing continuous operation while a tank is being refilled or cleaned.

[0158] The supply subsystem 240 is in fluid communication with and receives grinding slurry from the buffer subsystem 230. In some embodiments, the supply subsystem 240 includes one or more supply tanks or tanks 242, 244. The supply tanks 242, 244 may hold the grinding slurry and may deliver the grinding slurry to one or more CMP devices (e.g., system 100) in fluid communication with them. Pumps 246, 248 may be positioned to draw grinding slurry from the supply tanks 242, 244 and push the grinding slurry to one or more CMP devices, respectively.

[0159] Figures 3A-3G The illustration shows perspective and plan views of filter devices 300, 306, and 308 according to some embodiments. Filter devices 300, 306, and 308 are shown with reference to... Figure 2 An embodiment of the filtration device 218 is described. The filtration device 300 may be or include a filter device, filter, or the like, and may be referred to throughout as filter device 300 or filter 300.

[0160] exist Figure 3A In this device, the filtration apparatus 300 includes a housing or "body" 310 and a filter element 320 positioned within the housing 310. One or more transmission lines 330, 340, 342 are in fluid communication with the filtration apparatus 300.

[0161] The housing 310 includes one or more walls 312, 314, and 316, which may be referred to as a “side wall” 312, a “cap” or “cap wall” 314, and a “base” or “bottom wall” 316, respectively. Wall 316 is a base that supports the filter element 320. Wall 314 is a cap or cover that covers the filter element 320 and wall 316. Wall 312 is a side wall extending from wall 314 to wall 316 and is adjacent to the filter element 320 in a horizontal direction. In some embodiments, two of walls 312, 314, and 316 are a single continuous element. For example, walls 312 and 314 may be a single continuous element different from wall 316. In another example, walls 312 and 316 are a single continuous element different from wall 314. The walls 312, 314, and 316 of the housing 310 define an opening 318.

[0162] The filter element 320 is positioned in the opening 318 of the housing 310. The filter element 320 has a length extending along the filter element axis 386, such as... Figure 3A As shown, this axis can be a vertical axis. The filter element 320 can capture and retain large particles in the substrate slurry. The filter element 320 can define an opening 322, the diameter of which is smaller than the diameter of the large particles but larger than the diameter of the abrasive particles. For illustrative purposes, Figure 3AThe opening 322 in the figure is not drawn to scale. In some embodiments, the opening 322 is substantially circular with a diameter ranging from about 1 nanometer to about 100 nanometers, but other suitable ranges are also considered in the embodiments herein. For example, the opening 322 may have a diameter ranging from about 100 nanometers to about 120 nanometers, which may be beneficial for improving the passage of abrasive particles while still capturing large particles therein.

[0163] Over time, a portion of opening 322 may become occupied by large particles, potentially reducing the flow of abrasive particles through filter 320. Large particles positioned within opening 322 may collide with other free-flowing large particles in the substrate slurry, causing them to pass through. When these large particles pass through opening 322, they may flow into the chemical mechanical planarization equipment and damage the semiconductor wafer being ground. Large particles passing through opening 322 may also damage filter 320 by increasing the size of opening 322 or forming nanoscale cracks in the filter 320 material, thereby reducing the filter 320's ability to remove large particles from the substrate slurry.

[0164] In embodiments of this disclosure, the substrate slurry arriving at the filtration device 300 is introduced and removed from the opening 318 of the housing 310 in a manner that generates a helical sweeping flow field, which rotates around the filter element 320 without directly impacting it. The helical sweeping flow field is beneficial in improving the movement of large particles away from the filter element 320 and toward the wall 312 due to centrifugal force.

[0165] The helical sweep flow field is generated by the number and location of inlets or openings 313 and first and second outlets or openings 315, 317 in the housing or "body" 310. In some embodiments, the housing 310 defines inlets 313 and first and second outlets 315, 317 therein. Inlets 313 and the first outlet 315 are defined in wall 312, and the second outlet 317 is defined in wall 316. Inlet 313 is located in wall 312 near wall 314 and away from wall 316. The first outlet 315 is located in wall 312 near wall 316 and away from wall 314. That is, inlet 313 is defined in the body 310 of the filter device 300 and is located in a first position adjacent to the first end 324 (e.g., the upper end) of filter element 320, while the first outlet 315 is defined in the body 310 of the filter device 300 and is located in a second position adjacent to the second end 326 (e.g., the lower end) of filter element 320.

[0166] A first transfer line 330 is connected to inlet 313 and operable to convey base slurry from a slurry tank (e.g., slurry tanks 212, 214) to opening 318. The base slurry is discharged from the first transfer line 330 into opening 318. A second transfer line 340 is connected to a first outlet 315 and operable to convey base slurry from filtration device 300 to a slurry tank. The base slurry is extracted from opening 318 via the second transfer line 340. A third transfer line 342 is connected to a second outlet 317 and operable to convey filtered base slurry from filtration device 300 to a mixing subsystem (e.g., mixing subsystem 220). The filtered base slurry is extracted from opening 318 via the third transfer line 342.

[0167] The flow directionality of the base slurry into and out of the opening 318 via the first and second transfer lines 330, 340 can be selected by the angles of the first and second transfer lines 330, 340 relative to the opening 318. For example, the angle of the first transfer line 330 can be selected so that the base slurry is discharged into the opening 318 in the direction shown by the first axis or "inlet axis" 382. In some embodiments, the inlet axis 382 is not parallel to the filter element axis 386. In some embodiments, the inlet axis 382 is further tangential to the filter element 320. That is, the inlet axis 382 may not intersect the filter element 320. In some embodiments, such as Figure 3A As shown, the inlet shaft 382 is a horizontal axis. That is, the inlet shaft 382 can be a horizontal axis, while the filter shaft 386 can be a vertical axis, such that the inlet shaft 382 and the filter shaft 386 are orthogonal to each other or substantially orthogonal.

[0168] In some embodiments, the angle of the second transfer line 340 can be selected so that the base slurry is drawn from the opening 318 in the direction shown by the second axis or the "first outlet axis" 384. In some embodiments, the first outlet axis 384 is not parallel to the filter element axis 386. In some embodiments, the first outlet axis 384 is tangent to the filter element 320. That is, the first outlet axis 384 may not intersect the filter element 320. In some embodiments, the first outlet axis 384 intersects the filter element 320. In some embodiments, as Figure 3A As shown, the first outlet shaft 384 is a horizontal axis. That is, the first outlet shaft 384 can be a horizontal axis, while the filter shaft 386 can be a vertical axis, such that the first outlet shaft 384 and the filter shaft 386 are orthogonal or substantially orthogonal to each other.

[0169] The third transfer line 342 may be aligned or substantially aligned with the filter element shaft 386 at or near the second outlet 317. This alignment may facilitate the downward extraction of the filtered substrate slurry within the filter element 320 through the opening 318. Due to the aforementioned centrifugal force, large particles are drawn away from the center of the opening 318 towards the wall 312. The location of the second outlet 317 at or near the center of the opening 318, wall 316, and filter element 320 may help reduce the number of large particles extracted by the third transfer line 342.

[0170] exist Figure 3B In the middle, the orientation or angle of the first and second transmission lines 330 and 340 relative to the filter device 300 is different from that of the reference. Figure 3A The difference is as described. Specifically, the first transfer line 330 may be oriented along an inlet axis 382, ​​which has a first angular offset θ1 from the horizontal axis. This first angular offset θ1 may cause the flow of the substrate slurry entering the opening 318 through the first transfer line 330 to be downward toward the wall 316 and away from the wall 314. In some embodiments, the first angular offset θ1 is at 0° (e.g., Figure 3A The depicted embodiments are within a range of approximately 45°. Other ranges (e.g., a first angular offset θ1 exceeding 45°) are also considered as embodiments herein.

[0171] The second transmission line 340 may be oriented along the first outlet axis 384, which is offset by a second angle θ2 from the horizontal axis. This second angle offset θ2 may cause the base slurry exiting the opening 318 via the second transmission line 340 to flow upwards toward the wall 314 and away from the wall 316. In some embodiments, the second angle offset θ2 is at 0° (e.g., Figure 3A The depicted embodiments are within a range of approximately 45°. Other ranges (e.g., a second angular offset θ2 exceeding 45°) are also considered as embodiments herein.

[0172] The third transmission line 344 may be oriented along the second outlet axis 388, which is offset by a third angle θ3 from the horizontal axis. In some embodiments, the second outlet axis 388 is aligned with a reference axis. Figure 3A The filter element shaft 386 described is the same or substantially the same. The second outlet shaft 388 may have a third angular offset θ3 of about 90°, for example, in the range of about 60° to about 120°. Other ranges exceeding or falling below the stated range are also considered in embodiments herein.

[0173] exist Figure 3C In the middle, the angles of the first and second transmission lines 330° and 340° are relative to the reference. Figure 3BThe descriptions differ. In some embodiments, the first transfer line 330 may be inclined such that the base slurry entering the opening 318 flows toward the wall 314 and away from the wall 316. In some embodiments, the second transfer line 330 may be inclined such that the base slurry exiting the opening 318 flows away from the wall 314 and toward the wall 316.

[0174] It should be understood that reference Figure 3A , Figure 3B , Figure 3C The described embodiments can be combined. For example, the first transmission line 330 may be as described in reference to Figure 3A The described orientation, while the second transmission line 340 may be as referenced Figure 3C The described orientation. In another example, the first transmission line 330 might be as shown in reference... Figure 3B The orientation described, while the second transmission line 340 may be as referenced. Figure 3C The orientation described. In some embodiments, the angles of the first and second transmission lines 330, 340 may be controlled by an actuator (not shown) based on an electrical control signal generated by a controller (not shown). The controller may select the angle to improve the helical swept flow field generated in the opening 318.

[0175] Figure 3D The described filtration device 306 is similar to the reference in most respects. Figure 3A , Figure 3B , Figure 3C The described filtration device 300 is similar. In some embodiments, the filtration device 306 has a second outlet 319 defined in wall 314 instead of a second outlet 317 defined in wall 316, or a second outlet 319 defined in wall 314 in addition to the second outlet 317 defined in wall 316. A third transmission line 344 is connected to the second outlet 319. The second outlet 319 may be aligned with the center of walls 314, 316, and the filter element 320. The third transmission line 344 may be along or substantially along a reference line. Figure 3A The described filter element is oriented with shaft 386.

[0176] In some embodiments, Figure 3D In this configuration, when the third transmission line 344 is positioned above the filter element 320 relative to the wall 316, opening 315 may be an inlet and opening 313 may be an outlet. That is, the helical swept flow field may spiral upward from opening 315 near the second end 326 to opening 313 near the first end 324.

[0177] Figure 3EThe generation of the helical swept flow field, illustrated by line 360, is depicted. Line 360 ​​may be referred to as the helical swept flow field 360 throughout the description. The helical swept flow field 360 is generated because the substrate slurry 390 flows into the opening 318 at 350 through a first transfer line 330 near the first end 324 of the filter element 320, and the substrate slurry 390 flows out of the opening 318 at 370 through a second transfer line 340 near the second end 326 of the filter element 320. The helical swept flow field 360 is further generated because the first transfer line 330 is oriented to discharge the substrate slurry 390 in a direction tangential to or not intersecting the filter element 320. The helical swept flow field 360 may be further generated because the second transfer line 340 is oriented to draw in the substrate slurry 390 in a direction tangential to or not intersecting the filter element 320. The helical sweeping flow field 360 of the base slurry 390 in the opening 318 acts to draw large particles outward from the filter element 320 and towards the wall 312. The large particles are then extracted from the opening 318 through the second transfer line 340. In some embodiments, the helical sweeping flow field 360 is substantially uniform along the length of the filter element 320 (e.g., in the direction of the filter element axis 386). Improved uniformity is as shown in the reference... Figure 3A The benefits of positioning the inlet 313 and outlet 315 at different ends of the filter element 320 are described.

[0178] In some embodiments, the flow rates of the base slurry 390 through the first and second transfer lines 330, 340 and the flow rates of the filtered base slurry through the third transfer line 342 are selected to favor the generation of the helical swept flow field 360. In some embodiments, the first flow rate of the base slurry 390 through the first transfer line 330 is in the range of about 10 liters per minute (LPM) to about 12 LPM, the second flow rate of the base slurry 390 through the second transfer line 340 is in the range of about 9 LPM to about 11 LPM, and the third flow rate of the filtered base slurry through the third transfer line 342 is in the range of about 1 LPM to about 4 LPM. Typically, the first flow rate exceeds the second flow rate, and the second flow rate exceeds the third flow rate. Other ranges higher or lower than the first, second, and third flow rate ranges are also considered in embodiments herein. One or more of the first, second, and third flow rates can be determined by referring to... Figure 6 Choose the valve described.

[0179] Figure 3FThe plan view of the filtration device 300 is illustrated according to some embodiments. The housing 310 of the filtration device 300 may have a circular outline in the plan view. The filter element 320 may also have a circular outline in the plan view. In some embodiments, the filter element 320 and the housing 310 may be aligned in the plan view. For example, the center of the housing 310 and the center of the filter element 320 may be the same. The sidewall 312 of the housing 310 may be offset from the filter element 320 by a distance D3. Due to the helical sweeping flow field of the base slurry, large particles exist at a higher concentration at a distance less than D3 from the sidewall 312.

[0180] like Figure 3F The description, except as referenced Figure 3A In some embodiments, inlet 313 and first outlet 315 are also located on opposite sides of filter element 320 in the horizontal direction, in addition to being located on opposite sides of filter element 320 in the vertical axis direction. For example, inlet 313 may be located near first side 325 of filter element 320, and first outlet 315 may be located near second side 327 of filter element 320. The positioning of inlet 313 and first outlet 315 as described above can facilitate the generation of references. Figure 3E The described spiral swept flow field.

[0181] Figure 3G The plan view of the filtration device 308 is illustrated according to some embodiments. The filtration device 308 is similar to the filtration device 300 in most respects. In some embodiments, one or both of the first and second transmission lines 330, 340 are offset from their respective tangent axes 383, 385 by corresponding distances D1, D2. For example, the sidewall of the first transmission line 330 may be offset from the tangent axis 383 by a first distance D1. In another example, the sidewall of the second transmission line 340 may be offset from the tangent axis 385 by a second distance D2. The first and second distances D1, D2 may be the same or different. In some embodiments, each of the first and second distances D1, D2 may be between approximately zero (e.g., ...). Figure 3F (As depicted in the embodiment) within approximately half of the separation distance D3 between the filter element 320 and the wall 312. When the range exceeds half of the distance D3, the flow of the base slurry 390 into the opening through the inlet 313 may intersect with the filter element 320, which may cause the filter element 320 to adsorb large particles therein, leading to the deterioration of the filter element 320.

[0182] Figure 4 A graph depicting the particle distribution in the base slurry is shown, according to some embodiments. (See reference...) Figures 1-3GAs described, the base slurry may include large particles, which may be aggregates of abrasive particles (or "working particles"). Distribution 400 may have a horizontal axis related to particle size and a vertical axis related to particle count. Distribution 400 may include a line 450 depicting the number of particles associated with each particle size. Line 450 may include two groups 410, 420. The first group 410 is associated with abrasive particles, and the second group 420 is associated with large particles. The first group 410 may include a peak 430 representing the particle size with the highest count. In some embodiments, at least one particle size in the second group 420 may be approximately twice the particle size associated with the peak 430 of the first group 410.

[0183] Figure 5 A plan view illustrating the operation of the filtration device 300, based on some embodiments. For example... Figure 5 As depicted, the helical sweeping flow field 360, generated by the positioning of inlet 313 relative to the first outlet 315, pushes large particles 520 against the wall 312 and away from the filter element 320. The helical sweeping flow field 360 reduces the number of large particles 520 in the opening 530 defined by the filter element 320, while the number of abrasive particles 510 in the opening 530 may remain unchanged, decrease slightly, or increase slightly. For example, the helical sweeping flow field 360 may also push abrasive particles 510 against the wall 312 and away from the filter element 320, but the abrasive particles 510 may be pushed outward to a significantly less extent than the large particles 520. It should be noted that Figure 5 The particles 510 and 520 shown are for illustrative purposes and not drawn to scale.

[0184] exist Figure 5In this design, the first portion of the substrate slurry near the outer or peripheral region of the helical swept flow field 360 may be referred to as "first substrate slurry 392" and may have a higher concentration of large particles. The peripheral region may extend inward from the sidewall 312 to a first location between the sidewall 312 and the filter element 320. That is, the peripheral region does not extend into the filter element 320, which helps to prevent large particles 520 from passing through or entering the filter element 320. The second portion of the substrate slurry near the inner or inner region or center of the helical swept flow field 360 may be referred to as "second substrate slurry 394" and may have a lower concentration of large particles, a higher concentration of abrasive or working particles, or both. In a plan view, the inner region may be inside the filter element 320. In some embodiments, the inner region may extend from the center of the filter element 320 to a second location slightly closer to the center than the first location. The second location may be outside the filter element 320. In some embodiments, the first concentration of large particles in the first substrate slurry 392 may exceed the second concentration of large particles in the second substrate slurry 394 by about 5 to about 1,000,000 times. That is, the number of large particles in the second substrate slurry 394 exiting through the second outlet 317 near the center of the helical swept flow field 360 may be about 5 to about 1,000,000 times less than the number of large particles in the first substrate slurry 392 exiting through the first outlet 315 near the outer side of the helical swept flow field 360. Other multiples within the range are also considered in the embodiments herein. In a non-limiting example, experimental results using a helical crossflow filtration device 300 include a reduction of about 85% in first large particles with a diameter greater than about 0.9 micrometers (μm) and a reduction of about 93% in second large particles with a diameter greater than about 0.2 μm. In some embodiments, the first concentration of large particles in the first substrate slurry 392 may exceed the second concentration of large particles in the second substrate slurry 394 by about 6.6 to about 14.3 times.

[0185] Figure 6 This illustration shows a schematic diagram of a substrate slurry supply subsystem 600 according to some embodiments. The substrate slurry supply subsystem 600 is referenced... Figure 2 One embodiment of the described base fluid supply subsystem 210, with the same reference numerals referring to the same elements. Figure 6 The text depicts a slurry tank 212, but as shown in the reference... Figure 2 As described, it may include two or more slurry tanks 212, 214.

[0186] exist Figure 6In this system, the base slurry supply subsystem 600 includes a slurry tank 212, a pump 216, a filter 300 (possibly a filter device 218), valves 602, 604, 606, 608, 610, and 612, first and second flow meters 620 and 622, drain outlets 640 and 660, an outlet 670, and a supply line 650. The slurry tank 212 stores and supplies the base slurry 680, and in most respects is similar to the reference system. Figure 2 The described base slurry is similar.

[0187] Each of valves 602, 604, 606, 608, 610, and 612 may be or include one or more ball valves, solenoid valves, or diaphragm valves containing actuators or solenoid coils. Typically, valves 602, 604, 606, 608, 610, and 612 may be manually controlled (e.g., by a human operator), electronically controlled, or both.

[0188] Valve 604 is located between slurry tank 212 and pump 216, and can control the flow of base slurry 680 from slurry tank 212 to pump 216.

[0189] Valve 610 is located between filter 300 and outlet 670 and controls the flow of base slurry 680 from filter 218 to mixing subsystem 220.

[0190] Valves 602 and 608 are located between the filter device 218 and the slurry tank 212, controlling the flow of the base slurry 680 discharged from the filter device 300 back to the slurry tank 212.

[0191] Valve 608 may be located between the second transfer line 340 and the slurry tank 212, and valve 610 may be located between the third transfer line 342 and the mixing subsystem 220. As described above, valves 608 and 610 can be controlled to select the flow rate of the base slurry 680 through the second transfer line 340 and the flow rate of the filtered base slurry through the third transfer line 342. This flow rate selection can be used to generate a beneficial helical sweep flow field based on the pore size of the filter element 320. The flow rate selection may be based on the pore size, which may be stored in a database or other suitable computer-readable medium. In some embodiments, the selection of the valve opening size of valves 608 and 610 may be performed at least based on one or more measurements from the first and second flow meters 620 and 622 located near valves 608 and 610.

[0192] A first flow meter 620, located between valves 608 and 602, measures the flow rate of the base slurry 680 discharged from the filter device 300 and flowing back to the slurry tank 212. The output of the first flow meter 620 can be received by a controller (not shown), which can determine the effectiveness of the filter element 320 based on the flow rate measured by the first flow meter 620. For example, the flow rate may decrease when the filter element 320 adsorbs large particles. When the decrease in flow rate exceeds a threshold, the controller can determine that the filter element 320 is ready for cleaning or replacement. Before exceeding the threshold, the controller can increase the valve opening of valve 608.

[0193] A second flow meter 622, located between valve 610 and outlet 670, measures the flow rate of the base slurry 680 from the filter device 300 to the mixing subsystem 220. The output of the second flow meter 622 can be received by a controller (not shown) that can determine the effectiveness of the filter element 320 based on the flow rate measured by the second flow meter 622. For example, when the filter element 320 adsorbs large particles, the flow rate through the third transmission line 342 may decrease. When the decrease in flow rate exceeds a threshold, the controller can determine that the filter element 320 is ready for cleaning or replacement. Before exceeding the threshold, the controller can increase the valve opening of valve 610. In some embodiments, the controller can determine that the filter element 320 is ready for cleaning or replacement based on measurements from the outputs of the first flow meter 620 and the second flow meter 622.

[0194] Before the base slurry is supplied to the mixing subsystem 220 for normal operation, the filter element 320 can be pre-washed. The pre-washing operation removes old base slurry from the filter element 320 and reduces clogging of the filter element 320.

[0195] Valve 606 is located between valve 608 and vent 630. During the prewash operation, valve 606 can be opened to discharge the old substrate slurry and particles removed from filter element 320 by the prewash through vent 630.

[0196] Valve 612 is located between valve 610 and drain outlet 640. During the prewashing operation, valve 612 can be opened to drain old substrate slurry and particles removed from filter element 320 or present in the transfer line between filter device 300 and drain outlet 640.

[0197] In some embodiments, a reverse cleaning or "backflow cleaning" operation may be performed to remove large particles stuck in the filter element 320. One or more types of deionized water or ultrapure water and nitrogen may be introduced into the filtration unit 300 via supply line 650 and valve 610. The removed particles, substrate slurry, and ultrapure water and / or nitrogen may be discharged through drain 660 located between the filtration unit 300 and pump 216. Backwashing may be performed on a schedule, such as once daily or more frequently.

[0198] In some embodiments, backwashing is performed based on one or more flow rate measurements generated by the first and second flow meters 620, 622. For example, backwashing can be performed immediately when one or both flow rate measurements are below a threshold, or scheduled for an available time period according to the wafer production schedule. The threshold may be related to a decrease in the effectiveness of the filter 320 or a "decreased effectiveness state." For example, the operating flow rate may be selected, such as a reference flow rate. Figure 3E As described previously, the first flow rate of the base slurry 390 through the first transfer line 330 can be in the range of about 10 liters per minute (LPM) to about 12 LPM, the second flow rate of the base slurry 390 through the second transfer line 340 can be in the range of about 9 LPM to about 11 LPM, and the third flow rate of the filtered base slurry through the third transfer line 342 can be in the range of about 1 LPM to about 4 LPM. Taking the second flow rate as an example, the operating flow rate of the second transfer line 340 can be selected as 10 LPM, and the performance reduction can be selected as a percentage or absolute value lower than the operating flow rate. In the example described, the performance reduction can be 10% or 1 LPM lower than the operating flow rate, i.e., 9 LPM. In some embodiments, the performance reduction is in the range of about 10% to about 50%, about 20% to about 40%, about 25% to about 35%, or other suitable values. In some embodiments, the performance reduction can be less than about 10% or more than about 50%, for example, 5% or 60%. In some embodiments, when the flow rate of the third transmission line 342 is below about 1 LPM or reduced by about 50%, the filter element 320 is reverse-cleaned or replaced.

[0199] The performance reduction can be selected based on a decrease in the second and / or third flow rates associated with the concentration of large particles in the filtered substrate slurry exceeding a threshold. For example, the concentration can be in the range of about 1 part per million (PPM) to about 1. Other ranges within the stated range are also considered herein as examples.

[0200] In a non-limiting example, adjusting the second flow rate from about 10 LPM to about 5 LPM can reduce the concentration of large particles by about 60%.

[0201] Figure 7 This diagram illustrates a filtration monitoring system (shown as 700) according to some embodiments. The filtration monitoring system 700 includes at least one of the following: a set of filtration monitoring devices 704, facility equipment 702, a computer 714, a filtration equipment status alarm system 706, or one or more client devices 708. The set of filtration monitoring devices 704 includes multiple filtration monitoring devices distributed across various locations within the facility. The filtration monitoring devices are used to determine measurements related to filtration equipment and / or other equipment within the facility.

[0202] In some embodiments, a set of filter monitoring devices 704 transmits a set of monitoring signals 712 to a computer 714. In some embodiments, each of the monitoring signals 712 is transmitted by a monitoring device in the set of filter monitoring devices 704 within the facility's grinding equipment. In some embodiments, the set of filter monitoring devices 704 includes at least one of a first set of monitoring devices for a filter device 300, a second set of monitoring devices for a second filter device, etc. In some embodiments, the first set of monitoring devices includes at least one of a first flow meter 620, a second flow meter 622, or one or more other monitoring devices.

[0203] In some embodiments, a set of monitoring signals 712 includes a first monitoring signal from a first flow meter 620. In some embodiments, the first flow meter 620 includes a wireless communication module that wirelessly transmits the first monitoring signal to a computer 714. In some embodiments, the first flow meter 620 transmits the first monitoring signal to the computer 714 via a wired connection between the first flow meter 620 and the computer 714. In some embodiments, the first monitoring signal indicates a first flow rate associated with the first transmission line 330.

[0204] In some embodiments, a set of monitoring signals 712 includes a second monitoring signal from a second flow meter 622. In some embodiments, the second flow meter 622 includes a wireless communication module that wirelessly transmits the second monitoring signal to a computer 714. In some embodiments, the second flow meter 622 transmits the second monitoring signal to the computer 714 via a wired connection between the second flow meter 622 and the computer 714. In some embodiments, the second monitoring signal indicates a third flow rate associated with a third transmission line 342.

[0205] In some embodiments, computer 714 controls display panel 720, which includes a set of status indicators associated with filtration devices in the facility. In some embodiments, the indicators in the set of status indicators include lights, such as indicator lights, that indicate whether a corresponding filtration device is associated with reduced performance, wherein a light in a first state indicates that the corresponding filtration device is associated with reduced performance and / or a light in a second state indicates that the corresponding filtration device is not associated with reduced performance. In some embodiments, display panel 720 includes a display configured to display an alarm indicating one or more detected potential states of one or more filtration devices. In some embodiments, the first state corresponds to a first color emitted by the light, such as red or another color, and the second state corresponds to a second color emitted by the light, such as green or another color. The set of status indicators includes at least one of a first indicator “F1” associated with filtration device 300, a second indicator “F2” associated with a second filtration device, a third indicator “F3” associated with a third filtration device, a fourth indicator “F4” associated with a fourth filtration device, or other indicators.

[0206] In some embodiments, computer 714 provides one or more first signals 710 to facility equipment 702. In some embodiments, the one or more first signals 710 are used to control at least a portion of facility equipment 702, such as one, some, or all of the base slurry supply system of the facility and / or other equipment of the facility. In some embodiments, the one or more first signals 710 are generated using a signal generator of computer 714. The one or more first signals 710 indicate at least one of the following: (i) a set of filtration device states, including at least one of: a first filtration device state of filtration device 300, a second filtration device state of a second filtration device, etc.; (ii) a list of filtration devices identified as being associated with reduced performance; or (iii) other information. In some embodiments, computer 714 wirelessly (e.g., using a wireless communication device of computer 714) transmits one or more first signals 710 to facility equipment 702. In some embodiments, computer 714 transmits one or more first signals 710 to facility equipment 702 via a physical connection between computer 714 and facility equipment 702. In some embodiments, the computer 714 transmits one or more first signals 710 to valves 608, 610 and pump 216 that control the flow rate of the substrate slurry entering and exiting the filtration device 300 and control the flow field of the substrate slurry in the filtration device 300.

[0207] In some embodiments, computer 714 transmits a second signal 718 to filter device status alarm system 706. The second signal 718 is generated using a signal generator of computer 714. In some embodiments, the second signal 718 indicates at least one of the following: (i) a set of filter device states, (ii) a list of filter devices identified as having reduced performance, or (iii) other information. In some embodiments, computer 714 transmits the second signal 718 wirelessly (e.g., using a wireless communication device of computer 714). In some embodiments, computer 714 transmits the second signal 718 to filter device status alarm system 706 via a physical connection between computer 714 and filter device status alarm system 706. In some embodiments, filter device status alarm system 706 triggers an alarm function based on the second signal 718. In some embodiments, filter device status alarm system 706 triggers an alarm function based on the second signal 718 indicating that filter device 300 is associated with reduced performance. In some embodiments, alarm information is displayed on a display of filter device status alarm system 706 in response to triggering the alarm function. The alarm information includes at least one of the following: an indication that the filter device 300 is associated with reduced performance, an indication to perform maintenance operations on the filter device 300 to remedy the reduced performance, an indication including a command to stop operation of the filter device 300 (e.g., until the reduced performance is remedied), or other indications. In some embodiments, in response to triggering the alarm function, an alarm sound is output via a speaker connected to the filter device status alarm system 706.

[0208] In some embodiments, computer 714 transmits a third signal 716 to one or more client devices 708. The one or more client devices 708 include at least one of a telephone, smartphone, mobile phone, landline, laptop computer, desktop computer, hardware, or other type of client device. The third signal 716 is generated using a signal generator of computer 714. In some embodiments, the third signal 716 indicates at least one of the following: (i) a set of filtering device statuses, (ii) identifying a list of filtering devices associated with performance degradation, or (iii) other information. In some embodiments, computer 714 wirelessly (e.g., using a wireless communication device of computer 714) transmits the third signal 716 to the client devices among the one or more client devices 708. In some embodiments, computer 714 transmits the third signal 716 to the client devices among the one or more client devices 708 via a physical connection between computer 714 and the client devices. In some embodiments, the third signal 716 includes information transmitted in response to the detection of one or more performance degradations associated with one or more grinding devices, such as at least one of emails, text messages, etc., such as a first performance degradation associated with the filtering device 300. In some embodiments, in response to the detection of performance degradation associated with the filtering device, a telephone call is made to a client device (e.g., a landline or mobile phone) among the one or more client devices 708 using the dialer of the computer 714.

[0209] In some embodiments, the monitoring signal group 712 is used as feedback, and the computer 714 controls the operation of the facility equipment 702 based on this feedback. In some embodiments, the computer 714 controls the operation of the facility equipment 702 based on the measurement results provided by the monitoring signal group 712. In some embodiments, the operation of the facility equipment 702 is controlled using one or more first signals 710. In some embodiments, the signals in the one or more first signals 710 indicate one or more instructions.

[0210] In some embodiments, the substrate slurry supply subsystem of facility equipment 702, in response to receiving a signal (one or more of the first signals 710), at least ceases operation, enters a locked state, or performs another operation. This signal is used to (i) indicate that the filtration device 300 is associated with a first potential defect, or (ii) indicate an instruction to cease operation, enter a locked state, or perform another operation. In some embodiments, the one or more first signals 710 include signals transmitted to a machine (e.g., a deionized water supply or a gas supply). In some embodiments, this signal instructs the machine to perform maintenance operations on the filtration device 300 to repair the first potential defect, such as (i) backwashing the filter element 320 of the filtration device 300, (ii) repairing and / or refurbishing one or more components of the filtration device 300, or (iii) replacing one or more components of the filtration device 300 with replacement components. In some embodiments, this signal allocates one or more resources (e.g., manpower, robots, one or more tools, replacement components, etc.) to the filtration device 300 to repair the first performance degradation.

[0211] In some embodiments, in response to determining that the filtration device 300 is not associated with a performance degradation, the filtration device 300 is used to supply substrate slurry to the mixing subsystem 220 for final supply to the polishing apparatus to perform a polishing process on the first semiconductor wafer 132. In some embodiments, in response to determining that the filtration device 300 is associated with a first performance degradation, the computer 714 instructs the substrate slurry supply subsystem 200 not to deliver substrate slurry via the filtration device 300 (e.g., until the first performance degradation is resolved). During the period when the substrate slurry supply subsystem 200 does not deliver substrate slurry via the filtration device 300, the substrate slurry supply subsystem 200 may deliver substrate slurry via another filtration device. In some embodiments, during a period when the substrate slurry supply subsystem 200 is not delivering substrate slurry via the filtration device 300, the substrate slurry supply subsystem 200 may stop delivering substrate slurry to the mixing subsystem 220 without stopping the grinding of the first semiconductor wafer 132, based on the presence of sufficient maturation slurry in one or more buffer tanks 232, 234, one or more supply tanks 242, 244, or both.

[0212] Figure 8 This describes a method 800 for operating the substrate slurry supply subsystem 200 and the slurry delivery monitoring system 700 according to some embodiments. At 802, the filtration device 300 performs a filter element pre-washing operation. In some embodiments, the pre-washing operation corresponds to at least one of the following modes of the substrate slurry supply subsystem 200: (i) the filtration device 300 is not in production, or (ii) the filter element 320 is wetted by a liquid (e.g., at least one of water, deionized water, rinsing fluid used in high-pressure (HP) rinsing, etc.).

[0213] In some embodiments, the substrate slurry supply process 806 is initiated in response to the filtration device 300 performing and / or completing a pre-wash operation (and / or transitioning from the pre-wash operation to a second operation). In some embodiments, the slurry delivery monitoring system 700 initiates the substrate slurry supply process 806 in response to determining that the filtration device 300 is not associated with a reduction in efficiency. In some embodiments, the slurry delivery monitoring system 700 initiates the substrate slurry supply process 806 in response to determining that the filtration device 300 is ready for use in the substrate slurry supply process 806. In some embodiments, the substrate slurry supply process 806 is performed using one or more techniques provided herein. In some embodiments, in response to performing at least a portion of the substrate slurry supply process 806, the filtration device 300 performs slurry filtration 810 to remove large particles from the substrate slurry before delivering the filtered substrate slurry to the mixing subsystem 220.

[0214] In some embodiments, in response to the filtration device 300 performing slurry filtration 810, the slurry delivery monitoring system 700 performs a flow determination 812. In some embodiments, the flow determination 812 includes at least one of the following: (i) capturing a first flow rate by a first flow meter 620, (ii) capturing a second flow rate by a second flow meter 622, (iii) determining whether the filtration device 300 is associated with performance degradation, or (iv) one or more other actions. In some embodiments, in response to determining via the flow determination 812 that the filtration device 300 is not associated with performance degradation, the filtration device 300 enters a ready-to-start process state 814. In some embodiments, if the filter element 320 does not require replacement or refurbishment, the filtration device 300 continues the base slurry supply process 806 after entering the ready-to-start process state 814. In some embodiments, the filter 300 enters and / or undergoes the pre-wash of step 802 after at least one of the following: (i) after the filter element 320 has been replaced or refurbished, (ii) after the base slurry supply has been stopped for a selected period of time (e.g., more than 1 hour), (iii) after the formulation of the grinding slurry to be supplied to the chemical mechanical planarization equipment has been changed, or (iv) in another appropriate situation.

[0215] In some embodiments, in response to determining via flow determination 812 that the filtration device 300 is associated with reduced performance, an alarm function and / or backwashing function 808 may be executed to perform at least one of the following: (i) replacing the filter element 320, (ii) refurbishing or repairing the filter element 320, (iii) backwashing the filter element 320, etc.

[0216] Figure 9Method 900 is described according to some embodiments. In 902, method 900 includes flowing a base slurry into a filter assembly (e.g., filter device 300) comprising a filter element (e.g., filter element 320) extending along a filter element axis. The base slurry may flow into the filter assembly through an inlet defined in the body of the filter assembly (e.g., housing 310). The inlet may be located near a first end of the filter element and may extend along an inlet axis not parallel to the filter element axis. In 904, method 900 includes draining the slurry from the filter assembly via a first outlet located near a second end of the filter element in the body of the filter assembly. The first outlet may extend along a first outlet axis not parallel to the filter element axis.

[0217] Figure 10 Method 1000 is described according to some embodiments. In 1002, method 1000 includes removing a first substrate slurry having a high concentration of large particles, the first substrate slurry being located outside a helical swept flow (e.g., helical swept flow field 360), the helical swept flow having a substantially uniform flow field along the axis of a filter element (e.g., filter element 320). In 1004, method 1000 includes generating a second substrate slurry having a high concentration of abrasive particles, the second substrate slurry being located inside the helical swept flow. In 1006, method 1000 includes grinding the surface of a semiconductor wafer via a grinding slurry containing the second substrate slurry. It should be understood that "containing" the second substrate slurry in the grinding slurry means using the second substrate slurry as a constituent precursor to generate the grinding slurry, but does not require the second substrate slurry to be present in its same form in the grinding slurry (e.g., after curing). That is, the second substrate slurry may change due to being contained in the grinding slurry, including but not limited to at least (i) dilution, (ii) curing, (iii) decomposition and / or aggregation of abrasive particles, etc.

[0218] One or more embodiments relate to a computer-readable medium including processor-executable instructions configured to implement one or more of the techniques provided herein. Figure 11Exemplary computer-readable media are illustrated herein, wherein embodiment 1100 includes a computer-readable medium 1108 (e.g., a CD-R, DVD-R, flash drive, hard disk, etc.) having computer-readable data 1106 encoded thereon. This computer-readable data 1106 further includes a set of processor-executable computer instructions 1104 configured to implement one or more of the principles set forth herein when executed by a processor. In some embodiments 1100, the processor-executable computer instructions 1104 are configured to implement method 1102, such as at least some of the methods described above, when executed by a processor. In some embodiments, the processor-executable computer instructions 1104 are configured to implement a system, such as at least some of the systems described above, when executed by a processor. Those skilled in the art will envision many such computer-readable media configured to operate according to the techniques provided herein.

[0219] In some embodiments, a method is provided. This method includes: flowing a chemical mechanical polishing (CMP) slurry into a filter assembly, the filter assembly including a filter element extending along a filter element axis, the inflow being via an inlet defined in the body of the filter assembly and located at a first position adjacent to a first end of the filter element, the inlet extending along an inlet axis not parallel to the filter element axis; and after flowing the CMP slurry into the filter assembly, flowing the CMP slurry out of the filter assembly via a first outlet defined in the body of the filter assembly and located at a second position adjacent to a second end of the filter element, the first outlet extending along a first outlet axis not parallel to the filter element axis. In one embodiment, the method further includes: during the outflow of the CMP slurry from the filter assembly via the first outlet, flowing the filtered CMP slurry out of the filter assembly via a second outlet defined in the body of the filter assembly and located at a third position adjacent to the second end of the filter element, the second outlet extending along a second outlet axis parallel to the filter element axis. In one embodiment, the CMP slurry flows out via the first outlet at a first flow rate, and the filtered CMP slurry flows out via the second outlet at a second flow rate, the first flow rate exceeding the second flow rate. In one embodiment, the method further includes: determining a second flow rate of the CMP slurry flowing out via the first outlet; and selecting a first flow rate of the CMP slurry flowing in via the inlet based on the second flow rate. In one embodiment, the method further includes: determining a third flow rate of the CMP slurry flowing out via the second outlet; and selecting a first flow rate of the CMP slurry flowing in via the inlet based on the third flow rate. In one embodiment, the method further includes: generating a helical swept flow field in the CMP slurry near the filter element, the helical swept flow field extending from a first end of the filter element to a second end of the filter element. In one embodiment, based on the pore size of the filter element, the method further includes at least one of: adjusting a first flow rate of the CMP slurry passing through the inlet; adjusting a second flow rate of the CMP slurry passing through the first outlet; or adjusting a third flow rate of the filtered CMP slurry passing through the second outlet.

[0220] In some embodiments, a method is provided. The method includes: generating a helical sweep flow field of a substrate slurry in a filtration apparatus, the substrate slurry comprising a first substrate slurry in an outer region of the helical sweep flow field and a second substrate slurry in an inner region of the helical sweep flow field; removing the first substrate slurry from the filtration apparatus via a first outlet defined in the filtration apparatus, the first substrate slurry having a first concentration of second particles, the second particles having a size greater than the first particles; draining the second substrate slurry from the filtration apparatus via a second outlet defined in the filtration apparatus, the second substrate slurry having a second concentration of second particles, the first concentration exceeding the second concentration; generating a polishing slurry comprising the second substrate slurry; and polishing a surface of a semiconductor wafer via the polishing slurry. In one embodiment, removing the first substrate slurry via the first outlet includes removing the first substrate slurry via the first outlet located near a bottom wall. In another embodiment, removing the first substrate slurry via the first outlet includes removing the first substrate slurry via the first outlet located near a cover wall. In one embodiment, the method further includes: determining, via at least one flow meter, whether the filter element of the filtration device is in a degraded performance state; and, in response to the filter element being in the degraded performance state, performing a backwash of the filter element. In one embodiment, performing a backwash includes: introducing at least one of deionized (DI) water or nitrogen into the filtration device via the second outlet. In one embodiment, the method further includes: determining, via at least one flow meter, whether the filter element of the filtration device is in a degraded performance state; and, in response to the filter element being in the degraded performance state, replacing the filter element. In one embodiment, the method further includes: performing a prewash of the filter element of the filtration device before generating a helical swept flow field.

[0221] In some embodiments, a system is provided. The system includes: a first tank operable to store a base slurry; a second tank operable to produce a grinding slurry containing the filtered base slurry; and a filtration device operable to produce the filtered base slurry, wherein the filtration device is operable to receive the base slurry from the first tank and output the filtered base slurry to the second tank, the filtration device including: a housing defining: an inlet connected to a first transmission line; and a first outlet connected to a second transmission line; and a filter element having a first end adjacent to the inlet and a second end adjacent to the first outlet. In one embodiment, the housing includes a cover wall, a bottom wall, and sidewalls extending from the cover wall to the bottom wall, the inlet being defined in the sidewall adjacent to the cover wall, and the first outlet being defined in the sidewall adjacent to the bottom wall. In one embodiment, the system includes: a first transfer line in fluid communication with the first tank and the filtration device via the inlet; a second transfer line in fluid communication with the first tank and the filtration device via the first outlet; and a third transfer line in fluid communication with the second tank and the filtration device via a second outlet defined in the bottom wall, the third transfer line being operable to deliver the filtered substrate slurry. In one embodiment, the system further includes: a first flow meter in fluid communication with the second transfer line, the first flow meter being operable to generate a first flow rate measurement associated with the second transfer line. In one embodiment, the system further includes: a second flow meter in fluid communication with the third transfer line, the second flow meter being operable to generate a second flow rate measurement associated with the second transfer line; wherein, based on at least one of the first flow rate measurement or the second flow rate measurement, the system is operable to perform a backwashing operation to clean the filter element. In one embodiment, based on the pore size of the filter element, the system is operable to select at least one of the following: a first flow rate in the first transport line; a second flow rate in the second transport line; or a third flow rate in the third transport line.

[0222] Although the subject matter has been described using language specific to structural features or methodological actions, it is understood that the subject matter of the appended claims is not necessarily limited to the specific features or actions described above. Rather, the specific features and actions described above are disclosed as exemplary forms for implementing at least some of the claims.

[0223] This document provides various operations of the embodiments. The order in which some or all of the operations are described should not be construed as implying that these operations must depend on the order. Alternative orderings that benefit from this description will be understood. Furthermore, it should be understood that not all operations must exist in every embodiment provided in this disclosure. Additionally, it will be understood that not all operations are necessary in some embodiments.

[0224] It will be understood that the layers, features, elements, etc., described herein are illustrated with specific dimensions relative to each other, such as structural dimensions or orientations, for the purpose of simplicity and ease of understanding, and in some embodiments, the actual dimensions of these layers, features, elements, etc., are substantially different from the dimensions illustrated herein. Furthermore, various techniques exist for forming the layers, regions, features, elements, etc. mentioned herein, such as etching techniques, planarization techniques, implantation techniques, doping techniques, spin coating techniques, sputtering techniques, growth techniques, or deposition techniques such as chemical vapor deposition (CVD).

[0225] Furthermore, the terms “exemplary” and / or similar terms are used herein to mean as an instance, example, illustration, etc., and are not necessarily advantageous. As used in this disclosure, “or” is intended to mean an inclusive “or” rather than an exclusive “or.” Furthermore, unless otherwise specified or clearly indicated from the context to be for the singular form, “a” and “an” as used in this disclosure and the appended claims should generally be interpreted as meaning “one or more.” Furthermore, the terms “at least one of A and B” and / or similar terms generally mean A or B or both A and B. Furthermore, in the use of “comprising,” “having,” “has,” “with,” or variations thereof, these terms are intended to be inclusive in a manner similar to the term “comprising.” Furthermore, unless otherwise specified, the terms “first,” “second,” or similar terms are not intended to imply temporal state, spatial state, order, etc. Rather, these terms are used only as identifiers, names, etc., of features, elements, items, etc. For example, a first element and a second element generally correspond to element A and element B, or two different or two identical elements, or the same element.

[0226] Furthermore, although this disclosure has been shown and described with respect to one or more embodiments, equivalent changes and modifications will occur to those skilled in the art based on a reading and understanding of this specification and drawings. This disclosure encompasses all such modifications and changes and is limited only by the scope of the following claims. In particular, with respect to the various functions performed by the foregoing elements (e.g., elements, resources, etc.), unless otherwise stated, the terms used to describe such elements are intended to correspond to performing the specified function of the described element (e.g., functionally equivalent), although not structurally equivalent to any element of the disclosed structure. Moreover, while a particular feature of this disclosure may have been disclosed with respect to only one of several embodiments, such feature may be combined with one or more other features of other embodiments, as may be desired and advantageous for any given or particular application.

Claims

1. A filtration device, characterized in that, include: The shell, wherein an inlet and a first outlet are defined: and A filter element is disposed within the housing and extends along a filter element axis, wherein the inlet is located at a first position adjacent to a first end of the filter element, the inlet extends along an inlet axis that is not parallel to the filter element axis, and the first outlet is located at a second position adjacent to a second end of the filter element, the first outlet extends along a first outlet axis that is not parallel to the filter element axis.

2. The filtration device according to claim 1, characterized in that, The housing further defines a second outlet located at a third position adjacent to the second end of the filter element, the second outlet extending along a second outlet axis parallel to the axis of the filter element.

3. The filtration device according to claim 2, characterized in that, The chemical mechanical grinding slurry flows into the filtration device through the inlet, flows out of the filtration device through the first outlet, and the filtered chemical mechanical grinding slurry flows out of the filtration device through the second outlet.

4. The filtration device according to claim 3, characterized in that, The chemimechanical grinding slurry flows out through the first outlet at a first flow rate, and the filtered chemimechanical grinding slurry flows out through the second outlet at a second flow rate, wherein the first flow rate exceeds the second flow rate.

5. A filtration system, characterized in that, include: The first tank is operable to store the base slurry; The second tank is operable to produce a grinding slurry containing a filtered base slurry; as well as A filtration device operable to produce the filtered substrate slurry, the filtration device operable to receive the substrate slurry from a first tank and output the filtered substrate slurry to a second tank, the filtration device comprising: The shell, wherein: The entry point connects to the first transmission line; and The first outlet connects to the second transmission line; and The filter element has a first end adjacent to the inlet and a second end adjacent to the first outlet.

6. The system according to claim 5, characterized in that, The housing includes a cover wall, a bottom wall, and side walls extending from the cover wall to the bottom wall, the inlet being defined in the side wall adjacent to the cover wall, and the first outlet being defined in the side wall adjacent to the bottom wall.

7. The system according to claim 6, characterized in that, include: The first transmission pipeline is in fluid communication with the first tank and the filtration device via the inlet; The second transmission pipeline is in fluid communication with the first tank and the filter device via the first outlet; as well as A third transmission line is in fluid communication with the second tank and the filtration device via a second outlet defined in the bottom wall. The third transmission line is operable to deliver the filtered substrate slurry.

8. The system according to claim 7, characterized in that, Also includes: A first flow meter is in fluid communication with the second transmission line and is operable to generate a first velocity measurement in relation to the second transmission line.

9. The system according to claim 8, characterized in that, Also includes: A second flow meter is in fluid communication with the third transmission line and is operable to generate a second flow velocity measurement in relation to the second transmission line. Based on at least one of the first flow rate measurement or the second flow rate measurement, the system is operable to perform a reverse cleaning operation to clean the filter element.

10. The system according to claim 7, characterized in that, Based on the pore size of the filter element, the system is operable to select at least one of the following: The first flow velocity in the first transmission pipeline; The second flow velocity in the second transmission line; or The third flow rate in the third transmission line.

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