Laser scribing device

Abstract

The application relates to the technical field of laser scribing, in particular to a laser scribing device. The laser scribing device comprises an optical system, the optical system comprises a laser, polarization beam splitter prisms and focusing mirrors; the laser is used for providing laser light, and the propagation direction of the laser light is a first direction; the polarization beam splitter prisms are two or more than two, and are arranged in sequence along the first direction; the polarization beam splitter prisms are used for splitting light so as to generate laser light propagating in a second direction, the second direction is different from the first direction; the number of the focusing mirrors is the same as that of the polarization beam splitter prisms, the optical axes of the focusing mirrors are parallel to each other, and the focal points of at least two focusing mirrors are located at different positions along the optical axis direction; the focusing mirrors are used for focusing the laser light in the second direction, and the focused laser light is used for scribing on a substrate. The application can reduce a heat affected zone, and can improve scribing efficiency and precision.

Description

Technical Field

[0001] This application relates to the field of laser scribing technology, and more particularly to a laser scribing device. Background Technology

[0002] Laser scribing devices utilize laser scribing technology to create fine grooves on the surface of deposited thin films, thereby constructing the internal connection structure between multiple sub-cells. The working principle of a laser scribing device is to precisely focus a laser beam with specific energy parameters and pulse frequency onto the target film layer. By utilizing the thermal effect and mechanical stress generated by the interaction between the laser and the material, selective removal of the film layer in a designated area is achieved. In practice, excessively high laser energy or overlap in a single scribing operation may exceed the material's etching threshold, resulting in over-scribing and a large heat-affected zone. To avoid the laser energy exceeding the etching threshold and affecting surrounding non-target areas, a low-energy, multiple-scribing process is typically employed; however, this method reduces processing efficiency.

[0003] It should be noted that the above content is not necessarily prior art, nor is it intended to limit the scope of patent protection of this application. Utility Model Content

[0004] This application provides a laser scribing device to solve or alleviate one or more of the technical problems mentioned above.

[0005] This application provides a laser scribing device, comprising: An optical system, comprising a laser, a polarizing beam splitter, and a focusing lens; The laser is used to provide laser light, and the propagation direction of the laser light is a first direction; There are two or more polarizing beam splitters arranged sequentially along the first direction. The polarizing beam splitters are used to split the light so as to generate laser light that propagates in a second direction, which is different from the first direction. The number of focusing lenses is the same as the number of polarizing beam splitters. The optical axes of the focusing lenses are all parallel to each other, and the focal points of at least two of the focusing lenses are located at different positions along the optical axis. The focusing lenses are used to focus the laser in the second direction, and the focused laser is used to scribing on the substrate.

[0006] The laser scribing device of this application embodiment uses a polarizing beam splitter to split the light multiple times. The split laser light is then focused by a focusing lens. Since the focal depth of the focusing lens is different, different focal points can be formed. Therefore, this application embodiment can use lasers with different focal points to scribing a line simultaneously. Compared with using a high-energy laser for scribing once, this application uses multiple low-energy lasers for scribing once, which can reduce the heat-affected zone and improve scribing efficiency. The overlapping line can be completed in just one scribing. Attached Figure Description

[0007] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the various drawings denote the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings depict only some embodiments disclosed in this application and should not be construed as limiting the scope of this application.

[0008] Figure 1 This is a schematic diagram of the structure of the laser scribing device provided in the embodiments of this application; Figure 2 This is a schematic diagram of the scribing method of the laser scribing device provided in the embodiments of this application; Figure 3 This is a schematic diagram of the laser scribing device provided in the embodiments of this application performing scribing; Figure 4 This is a schematic diagram of the structure of the perovskite thin-film battery provided in the embodiments of this application; Figure 5 These are scanning electron microscope images of the perovskite thin-film battery provided in the embodiments; Figure 6 This is a scanning electron microscope image of a perovskite thin-film battery provided as a comparison.

[0009] Explanation of reference numerals in the attached figures: 1-Laser; 2-First waveplate; 3-First reflecting mirror; 4-Second reflecting mirror; 5-Beam expander and collimator; 6-First polarizing beam splitter; 7-Second polarizing beam splitter; 8-Third polarizing beam splitter; 9-Baffle; 10-Third reflecting mirror; 11-Optical power meter; 12-Second waveplate; 13-Third waveplate; 14-Fourth waveplate; 15-First diffractive optical element; 16-Second diffractive optical element; 17-Third diffractive optical element Components; 18-First focusing lens; 19-Second focusing lens; 20-Third focusing lens; 21-Substrate; 22-Power system; 101-Top electrode; 102-Electron transport layer; 103-Passivation layer; 104-Perovskite light absorption layer; 105-Hole transport layer; 106-Back electrode; 107-Transparent glass substrate; P1-First scribe line; P2-Second scribe line; P3-Third scribe line; A-First direction; B-Second direction. Detailed Implementation

[0010] The embodiments of this application are described in detail below, examples of which are illustrated in the accompanying drawings. In the drawings, for clarity, the dimensions of layers, regions, and elements, as well as their relative dimensions, may be exaggerated. Throughout, the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this application can be combined with each other.

[0011] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this application, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion. And the discussion of a second element, component, area, layer, or portion does not imply that the first element, component, area, layer, or portion necessarily exists in this application.

[0012] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0013] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such terms can be used interchangeably where appropriate so that the embodiments of this application described herein can be implemented, for example, in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0014] In this application, when numerical intervals (i.e., numerical ranges) are involved, unless otherwise specified, the distribution of selectable numerical values ​​within the numerical interval is considered continuous, and includes the two endpoints of the numerical interval (i.e., the minimum and maximum values), as well as every numerical value between these two endpoints. Unless otherwise specified, when a numerical interval refers only to integers within that numerical interval, it includes the two endpoint integers of the numerical range, as well as every integer between the two endpoints, which is equivalent to directly listing every integer. When multiple numerical ranges are provided to describe features or characteristics, these numerical ranges can be merged. In other words, unless otherwise specified, the numerical ranges disclosed in this application should be understood to include any and all subranges included therein. The "numerical value" in the numerical interval can be any quantitative value, such as a number, percentage, ratio, etc. The term "numerical interval" can be broadly included to include percentage intervals, ratio intervals, proportion intervals, etc.

[0015] The fill factor (FF) used in this article refers to the actual maximum available power (P). m or V mp ×J mp The ratio of the theoretical (not practically available) power (Jsc × Voc) to the theoretical (not practically available) power (Jsc × Voc). Therefore, FF can be determined by the following formula: FF = (V mp ×J mp ) / (J sc ×V oc Jmp and Vmp represent the current density and voltage at the maximum power point (Pm), respectively, which is obtained by changing the resistance in the circuit until J×V reaches its maximum value; Jsc and Voc represent the short-circuit current and open-circuit voltage, respectively. The fill factor is a key parameter for evaluating solar cells. Commercial solar cells typically have a fill factor of approximately 60% or higher.

[0016] The open-circuit voltage (Voc) used in this paper is the potential difference between the anode and cathode of the device under conditions of no external load connection.

[0017] The short-circuit current (Isc) used in this article is the maximum current flowing through the output terminal of a photovoltaic cell or module when it is short-circuited (voltage V=0) under STC conditions.

[0018] The power conversion efficiency (PCE) of solar cells used in this article refers to the percentage of power converted from absorbed light into electrical energy. The PCE of a solar cell can be measured under standard test conditions (STC) based on incident light irradiance (E: W / m²). 2 ) and the surface area of ​​solar cells (Ac:m 2 The STC is calculated by dividing by the point of maximum power (Pm). STC typically refers to the value at a temperature of 25°C and an irradiance of 100 W / m². 2 The spectrum of air quality 1.5 (AM1.5).

[0019] This application provides a laser scribing device. Based on this, the area of ​​thermal damage during scribing is reduced. See below for details.

[0020] Exemplary embodiments according to this application will now be described in more detail with reference to the accompanying drawings. It should be understood that these exemplary embodiments may be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein.

[0021] like Figure 1 As shown, this application provides a laser scribing device.

[0022] The laser marking device includes an optical system and a power system.

[0023] In some embodiments, the optical system includes a laser, a polarizing beam splitter, and a focusing lens; wherein the laser is used to provide laser light, and the propagation direction of the laser light is a first direction A; there are two or more polarizing beam splitters arranged sequentially along the first direction A, and the polarizing beam splitters are used to split the light so as to generate laser light propagating in a second direction B, where the first direction A and the second direction B are different; thereby, one laser light is divided into several paths, and the laser energy of each path is adjustable.

[0024] Optionally, the first direction A and the second direction B are perpendicular to each other. This facilitates the placement of the laser scribing device on the substrate, allowing the laser scribing device to be positioned horizontally on the substrate.

[0025] In some specific embodiments, see Figure 1In this laser scribing device, the polarizing beam splitter includes a first polarizing beam splitter 6, a second polarizing beam splitter 7, and a third polarizing beam splitter 8. The laser energy formed in the second direction B after being split by the first polarizing beam splitter 6, the second polarizing beam splitter 7, and the third polarizing beam splitter 8 is equal. Therefore, during scribing, the resulting lines are more uniform.

[0026] Optionally, after being split by the third polarizing beam splitter 8, the laser energy propagating in the second direction B can be 1 / 100 to 5 / 100 of the energy emitted by the laser. For example, it can be 1 / 100, 2 / 100, 3 / 100, 4 / 100, 5 / 100, etc. For instance, if the energy of the laser emitted by the laser is 100%, then the energy of the split laser beam formed after being split by the first polarizing beam splitter 6, the second polarizing beam splitter 7, and the third polarizing beam splitter 8 is uniformly 33%. Therefore, after being split by the third polarizing beam splitter 8, the laser energy propagating in the second direction B is 1 / 100 of the energy emitted by the laser 1. This facilitates real-time monitoring of laser energy fluctuations.

[0027] In some specific embodiments, the number of focusing lenses is the same as that of the polarizing beam splitter. The optical axes of the focusing lenses are all parallel to each other, and the focal points of at least two focusing lenses are located at different positions along the optical axis. The focusing lenses are used to focus the laser in the second direction B. The focused laser is used to scribing on the substrate, and all the focused lasers at least partially overlap on the scribing line on the substrate. Thus, by using a polarizing beam splitter to perform multiple beam splits, the split lasers are focused by the focusing lenses. Since the focal depths of the focusing lenses are different, focal points at different distances from the substrate can be formed. The fact that the focused lasers at least partially overlap on the scribing line on the substrate allows multiple lasers to scribing on the same line. This application embodiment can use lasers with different focal points to simultaneously scribing a line. Compared to using a high-energy laser for scribing once, this application can use multiple low-energy lasers for scribing once, which can reduce the heat-affected zone and improve scribing efficiency. The overlapping line can be completed with only one movement of the platform or scribing head. At the same time, it can also ensure scribing accuracy and ensure that the direction of the light spot movement is in a straight line, without having to consider the offset error caused by secondary positioning.

[0028] Preferably, the orthographic projections of all the focal points onto the substrate lie on the same straight line. This ensures that the area of ​​the laser spot overlapping on the same straight line is maximized, facilitating the scribing process while also guaranteeing scribing accuracy and ensuring that the direction of the laser spot movement is in a straight line, without needing to consider the offset error caused by secondary positioning.

[0029] In some specific embodiments, see Figure 1The focusing lens includes a first focusing lens 18, a second focusing lens 19, and a third focusing lens 20. The focal points of the first focusing lens 18, the second focusing lens 19, and the third focusing lens 20 are located at different positions along the optical axis, with the focal point of one of the focusing lenses located on the substrate 21. Thus, different laser focal heights concentrate laser energy at different heights from the substrate, thereby achieving layer-by-layer etching and providing a stacked line processing effect. As some examples, after the laser beam passes through the first focusing lens 18, the focal point is located 0.5 mm above the surface of the substrate 21, achieving upper defocus etching; after the laser beam passes through the second focusing lens 19, the focal point is located 0.2 mm above the sample surface, achieving upper defocus etching; after the laser beam passes through the third focusing lens 20, the focal point is located 0 mm above the sample surface, achieving positive focus etching. The heat-affected zone of the second etched line P2 can be reduced by multiple etching operations. As another example, when scribing the third line P3, the laser emits picosecond ultraviolet light (355nm), and the corresponding optical components are replaced with components adapted to the corresponding wavelength. By using laser scribing with different focal points, light spots of different areas and energies can be formed on the substrate 21. Thus, the stepped structure of the third line P3 can be scribed, effectively reducing the risk of top battery overlap.

[0030] It is worth noting that the second etch line P2 is a etch line located on the photoactive functional stack, obtained by etching through the photoactive functional stack; the third etch line P3 is a etch line located on the top electrode 1 and the photoactive functional stack, obtained by etching through both the top electrode 1 and the photoactive functional stack. Optionally, see [link to relevant documentation]. Figure 2 The focal points of the first focusing lens 18 and the second focusing lens 19 are located above the substrate 21, while the focal point of the third focusing lens 20 is located on the substrate 21.

[0031] In some specific embodiments, see Figure 1 The optical system further includes a first waveplate 2 and a beam expander / collimator 5, which are sequentially arranged in the output optical path of the laser 1. This converts the emitted laser light from circularly polarized light to linearly polarized light, which is beneficial for transmission.

[0032] Optionally, the waveplate is a quarter-waveplate, which is used to convert circularly polarized light into linearly polarized light.

[0033] Optionally, the beam expander collimator is used to expand the diameter of the laser beam and collimate the divergence angle of the laser beam, so that it becomes a collimated beam again.

[0034] In some specific embodiments, see Figure 1The optical system further includes an optical power meter 11, which is used to monitor the power of the laser beam propagating along the first direction A after being split by all the polarizing beam splitters. Thus, the optical power meter can collect the laser beam along the first direction A of the downstream polarizing beam splitter in the optical path, enabling real-time monitoring of the laser beam during the scribing process using a low-energy laser.

[0035] Optional, see Figure 1 A baffle 9 is provided between the optical power meter 11 and the third polarizing beam splitter 8 (the downstream polarizing beam splitter in the optical path). This allows the optical power meter 11 to receive laser light when monitoring is needed, and to not receive laser light when not needed.

[0036] In a preferred embodiment, the optical system further includes a plurality of waveplates and a plurality of diffractive optical elements (DOEs); the beam split by each polarizing beam splitter in the second direction B passes through the waveplates and the diffractive optical elements and then enters the corresponding focusing lens. Thus, the waveplates first convert linearly polarized light into circularly polarized light, and then the DOEs perform wavefront modulation.

[0037] Furthermore, the waveplate can be a quarter-wave plate. The quarter-wave plate controls the laser polarization state, and the DOE controls the light field distribution; the combination of the two can generate a complex light field.

[0038] For example, see Figure 1 The laser output path on the second direction B of the first polarizing beam splitter 6 is provided with a second wave plate 12 and a first diffractive optical element 15. The laser output path on the second direction B of the second polarizing beam splitter 7 is provided with a third wave plate 13 and a second diffractive optical element 16. The laser output path on the second direction B of the third polarizing beam splitter 8 is provided with a fourth wave plate 14 and a third diffractive optical element 17. Then it enters the corresponding focusing lens.

[0039] In some embodiments, a reflector can also be used to change the direction of laser propagation. For example, see Figure 1 As shown, a first reflecting mirror 3 and a second reflecting mirror 4 are provided between the first wave plate 2 and the beam expander collimator 5, and a third reflecting mirror 10 is provided between the third polarizing beam splitter 8 and the optical power meter 11. This allows for more flexible arrangement of the various components within the device.

[0040] In some specific embodiments, the power system is used to generate relative motion between the scribing laser and the substrate, such relative motion causing all the scribing lasers to scribing the same line. This ensures that the lasers act on the same line, improving the quality and efficiency of the scribing process.

[0041] It should be noted that in the embodiments of this application, all the scribing lasers are used to scribing the same scribing line, which means that the scribing lines generated by the scribing lasers at least partially overlap.

[0042] Optional, see Figure 3 The power system 22 is used to drive the polarizing beam splitter and the focusing lens to move, so that the focused laser is used to scribing the same line. This method of movement makes the scribing more flexible. For example, the power system 22 can be a servo motor and a transmission mechanism, and the movement of the power system 22 drives the polarizing beam splitter and the focusing lens to move.

[0043] In some embodiments, the substrate 21 includes an un-scribed thin-film battery. Thus, a thin-film battery is formed after scribing (P1 to P4) using this device.

[0044] Optionally, the thin-film battery can be a silicon-based thin-film solar cell, a cadmium telluride solar cell, a copper indium gallium selenide solar cell, or a perovskite solar cell, etc.

[0045] In some specific embodiments, see Figure 4 The perovskite thin-film battery includes, in sequence, a transparent glass substrate 107, a back electrode 106, a hole transport layer 105, a perovskite light absorption layer 104, a passivation layer 103, an electron transport layer 102, and a top electrode 101. The back electrode 106 has a first scribe line P1; the hole transport layer 105, the perovskite light absorption layer 104, the passivation layer 103, and the electron transport layer 102 have a second scribe line P2, which is filled with a conductive material; and the hole transport layer 105, the perovskite light absorption layer 104, the passivation layer 103, the electron transport layer 102, and the top electrode 101 have a third scribe line P3.

[0046] Optionally, the first scribing line P1, the second scribing line P2, and the third scribing line P3 can be scribed by the laser scribing device of this application embodiment and cleaned by P4.

[0047] Furthermore, the laser light sources used for the first line P1, the second line P2, and the third line P3 can be nanosecond infrared, picosecond green light, picosecond infrared, picosecond ultraviolet, femtosecond green light, femtosecond ultraviolet, and femtosecond infrared, etc.

[0048] Optionally, the width of the first datum line P1 is 20 μm to 50 μm.

[0049] Optionally, the width of the second datum line P2 is 50 μm to 200 μm.

[0050] Optionally, the width of the third daemon P3 is 30 μm to 100 μm.

[0051] Optionally, the distance between the first datum line P1 and the second datum line P2 is 20μm to 300μm.

[0052] Optionally, the distance between the second datum line P2 and the third datum line P3 is 20μm to 300μm.

[0053] Optionally, the back electrode 106 can be a transparent conductive oxide (TCO). Further, the back electrode 106 can be made of ITO or FTO material. Optionally, the TCO can be deposited on the transparent glass substrate 107 using magnetron sputtering. Optionally, the thickness of the back electrode 106 can be from 200 nm to 800 nm.

[0054] Optionally, the thickness of the hole transport layer 105 can be 1 nm to 100 nm.

[0055] Optionally, the thickness of the perovskite light-absorbing layer 104 can be 300 nm to 500 nm.

[0056] Optionally, the total thickness of the passivation layer 103 and the electron transport layer 102 can be 10 nm to 100 nm.

[0057] Optionally, the material of the top electrode 101 is selected from one or more of the following materials: indium tin oxide (ITO), indium zinc oxide (IZO), indium tungsten oxide (IWO), fluorine-doped tin oxide (FTO), indium cerium oxide (ICO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), copper (Cu), silver (Ag), gold (Au), aluminum (Al), carbon electrode, carbon nanotube, silver / aluminum alloy electrode.

[0058] Optionally, the thickness of the top electrode 101 can be 100 nm to 300 nm.

[0059] The following section will present performance tests on the perovskite thin-film battery fabrication method and related comparative examples provided in this application.

[0060]

Example

[0061] Step 3: Prepare NiO with a thickness of 30 nm on FTO using spin coating. x , namely hole transport layer 105; Step 4: Apply NiO using a one-step spin coating method xA perovskite light-absorbing layer 104 is deposited on the layer. The structural formula of the perovskite light-absorbing layer 104 is Cs. 0.25 FA 0.75 Pb(I 0.8 Br 0.2 )3, with a band gap of approximately 1.68 eV and a thickness of 500 nm; Step 5: Prepare C using thermal evaporation method 60 A 20 nm thick layer is used as a passivation layer 103; Step 6: SnO2 with a thickness of 15 nm is prepared by atomic layer deposition as electron transport layer 102; Step 7: Use picosecond green light to perform a second scribing, etch through the electron transport layer 102, passivation layer 103, perovskite light absorption layer 104 and hole transport layer 105 to obtain a continuous second scribing line P2. The width of the second scribing line P2 is 70 μm, and the distance between the second scribing line P2 and the first scribing line P1 is 100 μm. Step 8: Sputter a 150 nm thick Cu layer using magnetron sputtering as the top electrode 101, and fill the second scribe line P2 with Cu as a conductive channel. Step 9: Use a picosecond green laser to perform a third scribing, etching through the top electrode 101, electron transport layer 102, passivation layer 103, perovskite light absorption layer 104 and hole transport layer 105 to obtain the third scribing line P3. The width of the third scribing line P3 is 30 μm, and the distance between the third scribing line P3 and the second scribing line P2 is 50 μm.

[0062] In this embodiment, the scribing device uses the laser scribing device of this application, including: a first polarizing beam splitter 6, a second polarizing beam splitter 7, and a third polarizing beam splitter 8. The laser beams split by the first polarizing beam splitter 6, the second polarizing beam splitter 7, and the third polarizing beam splitter 8 are 33% of the laser energy emitted by the laser 1, and are all 0.02W; and a first focusing lens 18, a second focusing lens 19, and a third focusing lens 20. The focal points of the first focusing lens 18 and the second focusing lens 19 are located on the upper side of the substrate processing surface, and the third focusing lens 20 is located on the surface of the substrate processing surface.

[0063] [Comparative Example] The other operations are the same as in Example 1, except that Comparative Example 1 uses a conventional laser scribing device for scribing. The laser emitted by the laser passes through a polarizing beam splitter, and the beam is focused by a focusing lens before scribing. The focal point of the laser after focusing is located on the surface of the substrate processing surface, and the laser power is 0.06 W.

[0064] [Test Example] IV tests were performed on the perovskite thin-film batteries of the examples and comparative examples, and the results are shown in Table 1.

[0065] The microscopic characterization of the perovskite thin-film solar cells in the examples and comparative examples is shown in [link to example]. Figure 5 and Figure 6 The comparison shows that the heat-affected zone on both sides of the scribe line in the embodiment is much smaller than that on both sides of the scribe line in the comparative embodiment.

[0066] The perovskite thin-film batteries of the examples and comparative examples were subjected to aging tests. They were continuously aged for 1000 hours in an environment of 85% humidity and 85°C to obtain their respective efficiency degradation rates.

[0067] Table 1

[0068] As shown in Table 1 above, compared to the comparative example, the short-circuit current density (Jsc) of Example 1 is increased by 5%, and the battery efficiency (PCE) is increased by 8%. Simultaneously, the open-circuit voltage (Voc) and fill factor (FF) are also slightly improved, resulting in better overall device performance. This is due to the reduced heat-affected zone, which improves battery performance. Furthermore, aging tests show that Example 1 exhibits better stability, which is attributed to the reduced heat-affected zone slowing down the perovskite phase transition rate and improving battery stability.

[0069] It should be noted that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential," etc., are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. The directional terms "inner" and "outer" refer to the inside or outside relative to the outline of the component itself. For example, if a device in the drawings is inverted, a device described as "above" or "on top of" other devices or structures will subsequently be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein are interpreted accordingly.

[0070] It should also be noted that the terms "one embodiment," "another embodiment," and "embodiment" used in this application refer to specific features, structures, or characteristics described in connection with that embodiment, which are included in at least one embodiment described in the general description of this application. The appearance of the same expression in multiple places in the specification does not necessarily refer to the same embodiment. Furthermore, when a specific feature, structure, or characteristic is described in connection with any embodiment, the intention is to suggest that implementing such a feature, structure, or characteristic in conjunction with other embodiments also falls within the scope of this application.

[0071] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0072] It should also be noted that the above are merely preferred embodiments of this application and do not limit the scope of patent protection of this application. Any equivalent structural or procedural changes made using the content of this application’s specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of this application.

Claims

1. A laser marking device, characterized in that, include: An optical system, comprising a laser, a polarizing beam splitter, and a focusing lens; The laser is used to provide laser light, and the propagation direction of the laser light is a first direction; There are two or more polarizing beam splitters arranged sequentially along the first direction. The polarizing beam splitters are used to split the light so as to generate laser light that propagates in a second direction, which is different from the first direction. The number of focusing lenses is the same as the number of polarizing beam splitters. The optical axes of the focusing lenses are all parallel to each other, and the focal points of at least two of the focusing lenses are located at different positions along the optical axis. The focusing lenses are used to focus the laser in the second direction, and the focused laser is used to scribing on the substrate.

2. The laser marking device according to claim 1, characterized in that, The focused laser beams at least partially overlap the scribing lines on the substrate.

3. The laser marking device according to claim 1, characterized in that, The orthographic projections of all the aforementioned focal points onto the substrate lie on the same straight line.

4. The laser marking device according to claim 1, characterized in that, It also includes the power system; The power system is used to generate relative motion between the scribing laser and the substrate, such relative motion causing all the scribing lasers to scribble the same line.

5. The laser marking device according to claim 4, characterized in that, The optical system further includes a first waveplate and a beam expander collimator, which are sequentially arranged in the output light path of the laser.

6. The laser marking device according to claim 1, characterized in that, The optical system also includes an optical power meter for monitoring the power of the laser beam propagating along the first direction after being split by all of the polarizing beam splitters.

7. The laser marking device according to claim 1, characterized in that, The first direction and the second direction are perpendicular to each other.

8. The laser marking device according to claim 1, characterized in that, The optical system also includes several waveplates and several diffractive optical elements; The beams split by each polarizing beam splitter in the second direction pass through the waveplate and the diffractive optical element and then enter the corresponding focusing lens.

9. The laser marking device according to claim 1, characterized in that, The polarizing beam splitter includes a first polarizing beam splitter, a second polarizing beam splitter, and a third polarizing beam splitter. The laser energy formed in the second direction after the first polarizing beam splitter, the second polarizing beam splitter, and the third polarizing beam splitter are all equal.

10. The laser marking device according to claim 9, characterized in that, After the light is split by the third polarizing beam splitter, the laser energy propagating in the second direction is 1 / 100 to 5 / 100 of the laser's emitted energy.

11. The laser marking device according to claim 10, characterized in that, The focusing lens includes a first focusing lens, a second focusing lens, and a third focusing lens. The focal points of the first focusing lens, the second focusing lens, and the third focusing lens are located at different positions along the optical axis, and the focal point of one of the focusing lenses is located on the substrate.

12. The laser marking device according to claim 1, characterized in that, It also includes the power system; The power system is used to drive the polarizing beam splitter and the focusing lens to move, so that the focused laser is used to scribing the same line.

13. The laser marking device according to claim 1, characterized in that, The substrate includes a thin-film solar cell.

14. The laser marking device according to claim 13, characterized in that, The thin-film solar cells include silicon-based thin-film solar cells, cadmium telluride solar cells, copper indium gallium selenide solar cells, or perovskite solar cells.

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