Uniform gas structure and coating equipment

Abstract

The application relates to the fields of photovoltaic and semiconductor technologies, in particular to a gas uniformizing structure and a coating equipment, the gas uniformizing structure is applied to the coating equipment for coating a silicon wafer, and the coating equipment comprises a gas uniformizing plate body, the gas uniformizing plate body has opposite first and second surfaces, wherein the first surface is provided with a geometric center; the first surface is provided with at least four gas uniformizing areas which are arranged at intervals around the geometric center, each gas uniformizing area is provided with a gas uniformizing slit, and each gas uniformizing slit penetrates through the first and second surfaces; in the gas uniformizing slits of adjacent gas uniformizing areas, the gas uniformizing slit of one of the gas uniformizing areas is used for uniformly dispersing precursor gas so that the precursor gas passes through the second surface to the surface of the silicon wafer, and the gas uniformizing slit of another of the gas uniformizing areas is used for uniformly dispersing isolation gas so that the isolation gas passes through the second surface to isolate the adjacent precursor gas.

Description

Technical Field

[0001] This application relates to the fields of photovoltaic and semiconductor technology, and in particular to a gas uniform structure and coating equipment. Background Technology

[0002] In the photovoltaic cell production process, coating equipment enables silicon wafers to undergo coating processes within a furnace, and is widely used in industries such as integrated circuits, power electronics, and solar cell production. In semiconductor and solar cell manufacturing equipment, coating process equipment is included in various systems such as oxidation equipment, PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment, cross-sectional passivation equipment, LPCVD (Low-Pressure Chemical Vapor Deposition) equipment, ALD (Atomic Layer Deposition) equipment, and semiconductor equipment.

[0003] Currently, coating equipment uses different reaction gases sequentially to perform the coating reaction. Taking the ALD process for solar cells as an example, the process gases are introduced sequentially to coat the surface of the photovoltaic cell. A gas distribution plate separates and evenly distributes the process gases and isolation gases on the surface of the photovoltaic cell for the coating reaction. The gas distribution plate is generally equipped with uniformly distributed gas distribution holes. The coating time is relatively long, the production efficiency is low, and the equipment occupies a large area, which does not meet the increasingly high process quality requirements of new batteries. Utility Model Content

[0004] In view of this, the present application provides a gas uniform structure and a coating equipment, which are applied to coating equipment for silicon wafers, shortening the coating process time, improving coating efficiency, and reducing coating cost.

[0005] According to the inventive concept of the first aspect of this utility model, a gas equalization structure is provided for use in a coating device for coating silicon wafers. The structure includes a gas equalization plate body having opposing first and second surfaces. The first surface has a geometric center. At least four gas equalization regions are arranged at intervals around the geometric center on the first surface. Each gas equalization region has a gas equalization slit, and each slit penetrates both the first and second surfaces. In the gas equalization slits of adjacent gas equalization regions, one slit is used to evenly distribute a precursor gas, allowing it to pass through the second surface to the surface of the silicon wafer. The other slit is used to evenly distribute an isolation gas, allowing it to pass through the second surface to isolate the adjacent precursor gas.

[0006] According to some embodiments of the present invention, the gas-uniform region is recessed inward to form a gas-collecting groove, and the bottom of the gas-collecting groove is provided with a gas-uniform slit extending from the geometric center to the edge of the first surface.

[0007] According to some embodiments of the present invention, the gas equalization structure further includes: an upper cover, the edge portion of the first surface abutting against the lower surface of the upper cover, the bottom of the gas collecting groove and the lower surface of the upper cover forming a gas equalization cavity; at least four air inlets, the air inlets being disposed on the lower surface of the upper cover and communicating with the gas equalization cavity, so as to allow the precursor gas or the isolation gas to enter the gas equalization cavity.

[0008] According to some embodiments of the present invention, an isolation area is provided on the first surface adjacent to the gas equalization area, and the gas equalization structure further includes a sealing gasket, which is disposed in the isolation area to isolate the precursor gas or isolation gas in the gas equalization chamber.

[0009] According to some embodiments of the present invention, in two adjacent gas equalization regions, one of the gas equalization regions is a precursor gas equalization region and the other is an isolation gas equalization region; the isolation gas equalization region is provided with a plurality of gas equalization seams, and the plurality of gas equalization seams are spaced apart around the geometric center in the isolation gas equalization region.

[0010] According to some embodiments of the present invention, the gap width of the gas equalization slit in the gas equalization zone is greater than the gap width of the gas equalization slit in the precursor gas equalization zone.

[0011] According to some embodiments of the present invention, each of the gas equalization areas is recessed inward to form a gas collection groove, and among two adjacent gas equalization areas, one of the gas equalization areas is a precursor gas equalization area and the other is an isolation gas equalization area. The gas collecting groove of the isolation gas equalization zone is fan-shaped, and the gas collecting groove of the precursor gas equalization zone is strip-shaped.

[0012] According to some embodiments of the present invention, the gas distribution structure further includes a vortex thermal field disposed on the upper surface of the upper cover, and the vortex thermal field is configured to heat the gas input into the air intake pipe.

[0013] According to some embodiments of the present invention, the gas equalization plate body is further provided with a plurality of mounting holes, and the gas equalization plate body is connected to the upper cover through the mounting holes.

[0014] According to the inventive concept of the second aspect of this utility model, a coating device is provided, comprising: a gas equalization structure as described in the foregoing embodiments; a process chamber, wherein the precursor gas enters the process chamber through the gas equalization structure; a silicon wafer carrier plate, rotatably disposed in the process chamber, wherein the silicon wafer carrier plate is used to support the silicon wafer to be coated; and a driving component, which is drivenly connected to the silicon wafer carrier plate to drive the silicon wafer carrier plate to rotate.

[0015] According to the gas equalization structure and coating equipment of this utility model embodiment, multiple gas equalization areas are opened at intervals on the gas equalization plate body, and gas equalization slits are opened in each gas equalization area. The gas equalization slits are used to separate different precursor gases into different areas by forming isolation gas clusters. The silicon wafer rotates and passes through the above different areas in sequence to complete the coating of the silicon wafer. It is not necessary to introduce the process gases in a sequential manner, which shortens the coating process time, improves the coating efficiency, and reduces the coating cost. Attached Figure Description

[0016] The above and other objects, features, and advantages of this application will become more apparent from the more detailed description of the embodiments of this application in conjunction with the accompanying drawings. The drawings are provided to further illustrate the embodiments of this application and form part of the specification. They are used together with the embodiments of this application to explain this application and do not constitute a limitation thereof. In the drawings, the same reference numerals generally represent the same components or steps.

[0017] Figure 1 The image shown is a perspective view of a gas-uniform structure provided in an embodiment of this application.

[0018] Figure 2 The image shown is a front view of a gas-uniform structure provided in an embodiment of this application.

[0019] Figure 3 The image shown is a perspective view of the combination of the gas uniform structure and the top cover of the spatial coating equipment provided in an embodiment of this application.

[0020] Figure 4 The image shown is a bottom view of the combination of the gas uniform structure and the top cover of the spatial coating equipment provided in an embodiment of this application.

[0021] Figure 5 As shown Figure 4 A magnified schematic diagram of a local structure in region A of the structure shown.

[0022] Figure 6 The image shown is a cross-sectional view of the combination of the gas uniform structure and the top cover of the spatial coating equipment provided in an embodiment of this application.

[0023] Figure label: 1. Gas equalization plate body; 101. First surface; 102. Second surface; 2. Gas equalization seam; 3. Gas collection groove; 4. Gas equalization chamber; 5. Air inlet; 6. Mounting hole; 7. Top cover; 8. Sealing gasket; 9. Reaction chamber; 10. Silicon wafer carrier; 11. Vortex thermal field; A1, A2, A3, A4 are gas equalization areas; C0, geometric center; B, isolation area. Detailed Implementation

[0024] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0025] In related technologies, coating equipment introduces different reaction gases in a time sequence for reaction coating. Different precursor gases are introduced into the reaction chamber one after another. During this process, inert gas is introduced to purge the pipes and reaction chamber to remove the residual first precursor gas in the pipes and reaction chamber, leaving only the first precursor gas adsorbed on the silicon wafer surface. This allows the two precursor gases to react only on the silicon wafer surface to form the desired film layer.

[0026] To ensure the uniformity of the film layer, a gas distribution plate is needed to evenly distribute the precursor gas on the surface of the silicon wafer. Therefore, multiple gas distribution holes are typically arrayed on the gas distribution plate to ensure uniform distribution of the precursor gas. Some problems exist in the above process. Specifically, the process gases are introduced sequentially, resulting in a long coating time, low production efficiency, and a large equipment footprint, which does not meet the increasingly stringent process quality requirements of modern batteries.

[0027] Figure 1 The image shown is a perspective view of a gas-uniform structure provided in an embodiment of this application. Figure 2 The image shown is a front view of a gas-uniform structure provided in an embodiment of this application. Figure 3 The image shown is a perspective view of the combination of a uniform gas structure and the top cover of a spatial coating device according to an embodiment of this application. Figure 4 The image shown is a bottom view of the combination of the gas uniform structure and the top cover of the spatial coating equipment according to an embodiment of this application. Figure 5 As shown Figure 4 A magnified view of a portion of region A in the structure shown. Figure 6 The image shown is a cross-sectional view of the combination of the gas uniform structure and the top cover of the spatial coating equipment provided in an embodiment of this application.

[0028] To solve the above-mentioned technical problems, according to one aspect of the inventive concept of this utility model, such as... Figures 1 to 5As shown, a gas equalization structure is provided for use in a coating device for coating silicon wafers. The structure includes a gas equalization plate body 1, which has a first surface 101 and a second surface 102 facing each other. The first surface 101 has a geometric center C0. At least four gas equalization regions (A1, A2, A3, and A4, where A1 and A3 are precursor gas equalization regions, and A2 and A4 are isolation gas equalization regions) are spaced apart around the geometric center C0 on the first surface 101. Each gas equalization region has a gas equalization slit 2, and each slit 2 penetrates both the first surface 101 and the second surface 102. In adjacent gas equalization regions, one slit 2 is used to evenly distribute the precursor gas (forming a precursor gas cluster on the surface of the silicon wafer) so that the precursor gas passes through the second surface to the surface of the silicon wafer. The other slit 2 is used to evenly distribute the isolation gas (forming an isolation gas cluster on the surface of the silicon wafer) so that the isolation gas passes through the second surface to isolate the adjacent precursor gas.

[0029] In this embodiment, multiple gas equalization regions are spaced apart on the gas equalization plate body 1, and gas equalization slits 2 are opened in each gas equalization region. The gas equalization slits 2 are used to separate different precursor gases into different regions by the isolation gas clusters formed by the isolation gas. The silicon wafer rotates and passes through the above different regions in sequence to complete the coating of the silicon wafer. The technical solution of this application does not require the process gases to be introduced in a specific order, which shortens the coating process time, improves the coating efficiency, and reduces the coating cost.

[0030] According to some embodiments of this utility model, a spatial single-wafer coating device includes a process chamber 9, a silicon wafer carrier 10, a gas equalization structure, a top cover 7, and a drive assembly. The first surface 101 of the gas equalization plate body 1 faces the top cover 7, and the second surface 102 faces the silicon wafer carrier 10. Vacuum holes are provided on the sidewall of the process chamber 9. The silicon wafer carrier 10 is rotatably disposed within the process chamber 9 and is suitable for carrying the silicon wafer to be coated. The gas equalization structure is located above the silicon wafer carrier 10. The drive assembly is drively connected to the silicon wafer carrier 10 to drive the silicon wafer carrier 10 (and the silicon wafer supported thereon) to rotate.

[0031] According to some optional embodiments of the present invention, the gas uniform structure and the coating equipment including the gas uniform structure provided in this application are not limited to coating only silicon wafers. The silicon wafer carrier 10 can also be used to carry other workpieces to be coated. In the embodiments of this application, only silicon wafers are used as examples for illustration.

[0032] According to some embodiments of this utility model, by changing the gas introduction method, various reactive gases required for coating (e.g., precursor gas A, precursor gas B, precursor gas C, ...) are simultaneously introduced into the process chamber 9. Through the gas uniform structure and vacuum holes, multiple relatively independent gas clusters are formed on the upper surface of the silicon wafer. Different reactive gases are separated by an isolation gas (a gas that does not react with any of the reactive gases or the silicon wafer, generally nitrogen or an inert gas) to create a gas curtain, which isolates precursor gas A, precursor gas B, precursor gas C, ... etc., so that each precursor gas gathers in a different and independent space. The silicon wafer carrier 10 drives the silicon wafer to rotate, and the upper surface of the silicon wafer passes through the spaces where each precursor gas is located in turn, completing the contact and reaction between the silicon wafer and precursor gas A, precursor gas B, ... respectively. As the silicon wafer rotates continuously, the reaction continues, shortening the coating process time and improving production efficiency.

[0033] Specifically, the precursor gas is input from above one of the gas equalization slits 2 on the gas equalization plate body 1. Optionally, the input position of the precursor gas is close to the geometric center C0 of the gas equalization plate body 1. In conjunction with the vacuum hole set at the edge of the gas equalization plate body 1, the input precursor gas diffuses from the input position towards the edge of the gas equalization plate. During the diffusion process, the precursor gas enters the space below the gas equalization plate body 1 through the gas equalization slit 2, that is, it is delivered to the space above the upper surface of the silicon wafer. By optimizing and controlling the air intake flow rate, vacuum power, and gas equalization slit size, multiple precursor gas clusters with dynamic and stable shapes and contours can be formed in the space above the upper surface of the silicon wafer. The isolation gas is input from above another gas equalization slit 2 adjacent to the aforementioned gas equalization slit 2 on the gas equalization plate body. Based on a similar structure and principle, the isolation gas forms multiple isolation gas clusters with dynamic and stable shapes and contours in the space above the upper surface of the silicon wafer. Each isolation gas cluster is between two adjacent precursor gas clusters to isolate the two precursor gas clusters and prevent them from reacting.

[0034] According to some embodiments of the present invention, the gas-equalizing region is recessed inward to form a gas-collecting groove 3, and the bottom of the gas-collecting groove 3 is provided with the gas-equalizing slit 2 extending from the geometric center C0 to the edge of the first surface 101.

[0035] In this embodiment, the gas collecting groove 3 is formed by the downward indentation of the first surface 101, which helps to better collect and distribute gas, improving gas utilization efficiency and coating uniformity. The gas collecting groove 3 is used to collect and distribute precursor gas or isolation gas, ensuring that the gas can be uniformly and stably delivered to the gas equalization slit 2. During the coating process, the precursor gas and isolation gas enter adjacent gas collecting grooves respectively. The gas in the gas collecting groove 3 is uniformly delivered to the interior of the process chamber 9 through the gas equalization slit 2 at the bottom of the groove. This design ensures that the gas can be fully mixed and uniformly distributed on the silicon wafer surface, improving the uniformity and quality of the coating. The combined design of the gas collecting groove 3 and the gas equalization slit 2 optimizes the gas flow path, reduces gas turbulence and dead zones, and improves the coating quality.

[0036] According to some embodiments of the present invention, the gas equalization structure further includes: an upper cover 7, the edge portion of the first surface 101 abutting against the lower surface of the upper cover 7, the bottom of the gas collecting groove 3 and the lower surface of the upper cover 7 together forming a gas equalization cavity 4; at least four air inlets 5, the air inlets 5 are disposed on the lower surface of the upper cover 7 and communicate with the gas equalization cavity 4, and the precursor gas or isolation gas enters the gas equalization cavity 4.

[0037] In this embodiment, the upper cover 7 is placed on the process chamber 9 and forms a sealed space with the process chamber 9, namely the gas equalization chamber 4. The upper cover 7 is provided with four air inlets 5 for inputting two paths of precursor gas and two paths of isolation gas. The air inlets 5 face the first surface 101 of the gas equalization plate body 1. Furthermore, the air inlets 5 extend at least partially into the gas collection groove 3.

[0038] According to some embodiments of the present invention, an isolation area B is provided on the first surface 101 adjacent to the gas equalization area. The gas equalization structure also includes a sealing gasket 8, which is disposed in the isolation area B to isolate the precursor gas or isolation gas in the gas equalization chamber 4.

[0039] In this embodiment, by adding an isolation region B between adjacent gas equalization areas, and using a sealing gasket 8, each gas equalization chamber 4 is made independent of the others and does not affect each other. This prevents gas from entering other gas equalization chambers 4, thus preventing the precursor gas and / or isolation gas from mixing during the gas equalization stage, thereby reducing purity or causing a reaction that could lead to product contamination of the silicon wafer. Furthermore, the relatively sealed environment further improves the gas equalization effect of the gas equalization seam 2.

[0040] According to some embodiments of the present invention, in two adjacent uniform gas regions, one uniform gas region is a precursor gas uniform gas region and the other uniform gas region is an isolation gas uniform gas region; the isolation gas uniform gas region is provided with a plurality of uniform gas slits 2, and the plurality of uniform gas slits 2 are arranged at intervals around the geometric center C0 in the isolation gas uniform gas region.

[0041] In this embodiment, by setting multiple gas equalization slits 2 in the gas equalization zone, the gas is evenly dispersed in a larger area using multiple gas equalization slits 2, thereby forming a larger volume of gas equalization slits, thus ensuring that the gas equalization zone of the adjacent gas equalization zone is isolated from the gas of the preceding gas, and preventing the two from reacting.

[0042] Furthermore, the gas equalization slit in the precursor gas equalization zone is a single slit. Optionally, the gas equalization slit 2 is a long narrow slit opened along the radial direction of the gas equalization plate body 1, which can sweep across the entire surface of the silicon wafer during the silicon wafer rotation, thereby uniformly "coating" the precursor gas onto the silicon wafer surface.

[0043] According to some embodiments of the present invention, the gap width of the gas equalization gap 2 in the gas equalization zone of the isolation gas equalization zone is greater than the gap width of the gas equalization gap 2 in the gas equalization zone of the precursor gas equalization zone.

[0044] In this embodiment, by increasing the gap width of the gas uniformity gap 2 in the gas uniformity zone, the uniformity of the gas mass is further improved, thereby enhancing its isolation effect. Furthermore, the intake flow rate of the gas is adjusted, for example, by increasing the intake volume, to ensure that a sufficiently concentrated gas mass is formed within a sufficiently large area.

[0045] According to some embodiments of the present invention, each gas equalization area is recessed inward to form a gas collecting groove 3. Among two adjacent gas equalization areas, one gas equalization area is a precursor gas equalization area and the other gas equalization area is an isolation gas equalization area. The gas collecting groove 3 of the isolation gas equalization area is fan-shaped, and the gas collecting groove 3 of the precursor gas equalization area is strip-shaped.

[0046] In this embodiment, a roughly fan-shaped gas collecting groove 3, in conjunction with multiple gas equalization slits 2 formed within it, creates a roughly fan-shaped isolation gas cloud above the silicon wafer. This ensures that during the silicon wafer's rotation, all areas except the corresponding region of the precursor gas equalization zone are covered by this fan-shaped isolation gas cloud, thus guaranteeing its isolation effect. The strip-shaped gas collecting groove 3 within the precursor gas equalization zone, in conjunction with the gas equalization slits 2 formed, creates a "blade-like" strip-shaped precursor gas cloud above the silicon wafer. Combined with the wafer's rotation, this uniformly "coats" the precursor gas onto the wafer's surface, ensuring the uniformity of the coating and thereby improving product yield.

[0047] According to some embodiments of the present invention, the gas distribution structure further includes a vortex thermal field 11 disposed on the upper surface of the upper cover 7, and the vortex thermal field 11 is configured to heat the gas input into the intake pipe.

[0048] In this embodiment, the vortex thermal field 11 can preheat the precursor gas and the isolation gas, thereby improving the controllability of the temperature in the coating reaction zone, and improving the reaction efficiency and coating efficiency.

[0049] According to some embodiments of this utility model, the gas equalization plate body is also provided with a plurality of mounting holes 6, and the gas equalization plate body 1 is connected to the upper cover 7 through the mounting holes 6.

[0050] In this embodiment, due to the limitations of the air distribution slot 2 and the air collection groove 3, multiple mounting holes 6 are arranged approximately evenly on the air distribution plate body 1, and the air distribution plate body 1 is fixed to the upper cover 7 by screws. Optionally, the mounting holes 6 are countersunk holes.

[0051] According to the inventive concept of the second aspect of this utility model, a coating device is provided, comprising: a gas equalization structure as described in the foregoing embodiment; a process chamber 9, through which a precursor gas enters the process chamber 9; a silicon wafer carrier 10, rotatably disposed within the process chamber 9, the silicon wafer carrier 10 being used to support the silicon wafer to be coated; and a driving component, which is connected to the silicon wafer carrier to drive the silicon wafer carrier 10 to rotate.

[0052] In the embodiments of this disclosure, unless otherwise specified, the connection can be a detachable connection using bolts, nuts, screws, clips, magnets, etc. In some connections where there is no particular requirement for a detachable fit, a non-detachable connection can be achieved through welding, bonding, etc.

[0053] The basic principles of this application have been described above with reference to specific embodiments. However, it should be noted that the advantages, benefits, and effects mentioned in this application are merely examples and not limitations, and should not be considered as essential features of each embodiment of this application. Furthermore, the specific details disclosed above are for illustrative and facilitative purposes only, and are not limitations. These details do not limit the application to the necessity of employing the aforementioned specific details for implementation.

[0054] The block diagrams of devices, apparatuses, devices, and systems involved in this application are merely illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, devices, and systems can be connected, arranged, and configured in any manner. Words such as “comprising,” “including,” “having,” etc., are open-ended terms meaning “including but not limited to,” and are used interchangeably with them. The terms “or” and “and” as used herein refer to the terms “and / or,” and are used interchangeably with them unless the context clearly indicates otherwise. The term “such as” as used herein refers to the phrase “such as but not limited to,” and is used interchangeably with it.

[0055] It should also be noted that in the apparatus, equipment, and methods of this application, the components or steps can be disassembled and / or recombined. These disassemblies and / or recombinations should be considered as equivalent solutions of this application.

[0056] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use this application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other aspects without departing from the scope of this application. Therefore, this application is not intended to be limited to the aspects shown herein, but rather to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0057] The above description has been given for purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of this application to the forms disclosed herein. Although numerous exemplary aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations thereof.

Claims

1. A uniform gas structure, applied in a coating equipment for depositing films on silicon wafers, characterized in that, It includes a gas equalization plate body, the gas equalization plate body having a first surface and a second surface opposite to each other, wherein the first surface has a geometric center; The first surface is provided with at least four gas-equalizing regions spaced around the geometric center, each gas-equalizing region is provided with a gas-equalizing slit, and each gas-equalizing slit penetrates the first surface and the second surface; In the gas equalization gaps of adjacent gas equalization regions, one of the gas equalization gaps is used to evenly distribute the precursor gas so that the precursor gas passes through the second surface to the surface of the silicon wafer, and the other gas equalization gap is used to evenly distribute the isolation gas so that the isolation gas passes through the second surface to isolate the adjacent precursor gas.

2. The gas-uniform structure according to claim 1, characterized in that, The gas-uniform area is recessed inward to form a gas-collecting groove, and the bottom of the gas-collecting groove is provided with a gas-uniform slit extending from the geometric center to the edge of the first surface.

3. The gas-uniform structure according to claim 2, characterized in that, The gas-uniform structure further includes: The top cover has an edge portion of the first surface abutting against the lower surface of the top cover, and the bottom of the gas collecting groove and the lower surface of the top cover together form a uniform gas chamber; At least four air inlets are provided on the lower surface of the upper cover and communicate with the air equalization chamber to allow the precursor gas or the isolation gas to enter the air equalization chamber.

4. The gas-uniform structure according to claim 3, characterized in that, On the first surface, an isolation area is provided adjacent to the gas equalization area. The gas equalization structure also includes a sealing gasket, which is disposed in the isolation area to isolate the precursor gas or isolation gas in the gas equalization chamber.

5. The gas-uniform structure according to claim 1, characterized in that, Of the two adjacent gas equalization regions, one gas equalization region is a precursor gas equalization region and the other gas equalization region is an isolation gas equalization region. The gas-uniformation zone is provided with a plurality of gas-uniformation seams, which are spaced apart around the geometric center of the gas-uniformation zone.

6. The gas-uniform structure according to claim 5, characterized in that, The gap width of the gas equalization slit in the isolation gas equalization zone is greater than the gap width of the gas equalization slit in the precursor gas equalization zone.

7. The gas-uniform structure according to claim 2, characterized in that, Each of the gas equalization areas is recessed inward to form a gas collection groove. Among two adjacent gas equalization areas, one of the gas equalization areas is a precursor gas equalization area and the other is an isolation gas equalization area. The gas collecting groove of the isolation gas equalization zone is fan-shaped, and the gas collecting groove of the precursor gas equalization zone is strip-shaped.

8. The gas-uniform structure according to claim 3, characterized in that, The gas distribution structure also includes a vortex thermal field disposed on the upper surface of the upper cover, and the vortex thermal field is configured to heat the gas input into the intake pipe.

9. The gas-uniform structure according to claim 3, characterized in that, The gas equalization plate body is also provided with a plurality of mounting holes, and the gas equalization plate body is connected to the upper cover through the mounting holes.

10. A coating apparatus, characterized in that, include: The gas-uniform structure as described in any one of claims 1-9: The precursor gas enters the process chamber through the gas equalization structure; A silicon wafer carrier is rotatably disposed within the process chamber, and the silicon wafer carrier is used to support the silicon wafer to be coated; A drive assembly is connected to the silicon wafer carrier to drive the silicon wafer carrier to rotate.

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