Precursor delivery apparatus for thin film deposition and deposition apparatus

Abstract

The utility model discloses a kind of precursor conveying device and deposition device for thin film deposition, wherein conveying device includes sequentially connected carrier gas total gas inlet device, source bottle device, source bottle carrier gas distribution gas inlet device, gaseous source gas inlet device, reaction chamber with first gas inlet and second gas inlet is provided.The utility model can be compatible with the combined use of gaseous, solid, liquid precursor etc., with the characteristics of flexible supply source, accurate conveying, low residue, high stability, suitable for atomic layer deposition and other thin film deposition processes, effectively improve thin film deposition quality and process flexibility.

Description

Technical Field

[0001] This utility model belongs to the field of semiconductor device technology, specifically relating to a precursor delivery device and a deposition device for thin film deposition, which is suitable for the precise and stable delivery of precursors in thin film deposition processes such as atomic layer deposition (ALD). Background Technology

[0002] In semiconductor thin film deposition processes (such as atomic layer deposition), precursors are introduced into the reaction chamber in an alternating, pulsed manner, allowing atoms to be deposited layer by layer on the substrate surface to form a thin film with uniform thickness, no pinholes, and excellent conformability. Simultaneously, excess precursors and reaction byproducts must be removed by purge gas between pulses to avoid affecting the film quality.

[0003] Existing precursor delivery devices have the following shortcomings: 1) Poor compatibility, making it difficult to simultaneously adapt to precursors in different states such as gaseous, solid, and liquid; 2) Pipelines are prone to cold spots, leading to precursor condensation and blockage of the pipelines; 3) Precursor residues remain in the pipelines during source switching, affecting process purity; 4) Incomplete purging, with dead zones in the common inlet pipeline and residual impurities in the chambers easily causing film defects; 5) Single source supply method, unable to meet the source output requirements of precursors with different characteristics.

[0004] Therefore, in order to address the above-mentioned technical problems, it is necessary to provide a precursor delivery device and a deposition device for thin film deposition.

[0005] The information disclosed in this background section is intended only to enhance the understanding of the overall background of this utility model and should not be construed as an admission or in any way implying that the information constitutes prior art known to those skilled in the art. Utility Model Content

[0006] The purpose of this invention is to provide a precursor delivery device and a deposition device for thin film deposition.

[0007] To achieve the above objectives, the technical solution provided by a specific embodiment of this utility model is as follows:

[0008] A precursor delivery device for thin film deposition includes a carrier gas main inlet device, a source bottle device, a source bottle carrier gas distribution inlet device, a gaseous source inlet device, and a reaction chamber provided with a first inlet and a second inlet, connected in sequence.

[0009] The main air intake device for carrier gas includes a carrier gas pipeline connected to the carrier gas source, as well as manual valves, pneumatic valves, pressure reducing valves, check valves, filters, and pressure gauges configured on the carrier gas pipeline. Under normal working conditions, the valves remain open.

[0010] The source bottle device includes several source bottles and a source bottle pipe connected to the source bottles for introducing carrier gas. The source bottle pipe is equipped with a source switching pipeline purge valve PV, which supports switching between three source supply modes: carrier gas source, saturated vapor pressure source, and pressurized source. Each source bottle contains a liquid precursor or a solid precursor.

[0011] The source bottle carrier gas distribution and inlet device is equipped with an independent first gas supply channel for each source bottle to connect to the first gas inlet and the second gas supply channel connected to the second gas inlet. Both the first and second gas supply channels are equipped with a diaphragm valve, a mass flow controller (MFC), a filter and a pressure gauge.

[0012] The gas source intake device includes several gaseous precursor sources and a first air pipe for transporting the gaseous sources. The first air pipe is equipped with a manual valve, a pneumatic valve, a pressure reducing valve, a check valve, a filter, and a pressure gauge. The first air pipe is connected to a second air supply channel.

[0013] The first and second air inlets are set independently to allow for the mutually exclusive entry of different precursors.

[0014] In one or more embodiments of this utility model, an ALD pulse control device is independently provided on the first air supply channel. The ALD pulse control device consists of two ALD pneumatic diaphragm valves and one ordinary pneumatic diaphragm valve, and is used to provide precursor pulse delivery.

[0015] In one or more embodiments of this utility model, a purging device is further included for purging the dead zone of the inlet common pipeline, the source bottle pipeline and the reaction chamber, including a purging pipeline connected between the carrier gas pipeline and the second gas supply channel, and a diaphragm valve and a mass flow controller (MFC) are provided on the purging pipeline.

[0016] In one or more embodiments of this invention, a cavity vacuum breaking device is further included, which is provided with a gas breaking pipe connected to the reaction chamber. The cavity vacuum breaking device is used to break the vacuum state of the reaction chamber.

[0017] In one or more embodiments of this invention, a source bottle tail discharge device is further included, comprising a tail discharge pipe respectively connected to a purge pipeline, a second gas supply pipeline, and a reaction chamber. The source bottle tail discharge device is used to discharge residual precursors from the source bottle and pipelines.

[0018] In one or more embodiments of this utility model, a pipeline heating device is also included. The pipeline heating device is a segmented independent temperature control structure, which includes a source bottle segment heating device for adjusting the temperature of the source bottle.

[0019] In one or more embodiments of the present invention, the segmented independent temperature control structure includes a first heating device disposed on the first gas supply channel and / or the second gas supply channel and / or the source bottle tube.

[0020] In one or more embodiments of the present invention, the first heating device includes an electric heating device disposed on the outside of the pipeline of the first gas supply channel and / or the second gas supply channel and / or the source bottle pipe.

[0021] In one or more embodiments of the present invention, the deposition apparatus includes the aforementioned precursor delivery device for thin film deposition.

[0022] In one or more embodiments of the present invention, a control device is further included, which is communicatively connected to the control valves of the carrier gas main intake device and / or the source bottle device and / or the source bottle carrier gas distribution intake device and / or the gaseous source intake device.

[0023] Compared with the prior art, the precursor transport device and deposition device for thin film deposition of this invention have the following advantages:

[0024] 1. Strong compatibility: It can be used in combination with gaseous, solid and liquid precursors at the same time, and the source bottle device and gas source gas inlet device support expansion to adapt to various process requirements.

[0025] 2. Anti-condensation design: The pipeline heating device adopts segmented independent temperature control, which effectively avoids the precursor from condensing and blocking in the pipeline, ensuring the stability of delivery;

[0026] 3. Low residue: Equipped with multiple purging functions including source replacement pipeline purging, source bottle purging, common pipeline purging, and chamber purging, resulting in less residue during source replacement and process gaps, thus improving film purity;

[0027] 4. Precise control: Through MFC flow control with independent gas supply channels and ALD pulse valve group, precise flow regulation and pulse delivery of the precursor are achieved to ensure uniform film deposition;

[0028] 5. Flexible supply: The source bottle device supports switching between three supply modes to meet the supply requirements of precursors with different characteristics. Attached Figure Description

[0029] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0030] Figure 1This is a schematic diagram of a precursor delivery device for thin film deposition in one embodiment of the present invention;

[0031] Figure 2 This is a schematic diagram of the valve control states of a precursor delivery device for thin film deposition for sources with different characteristics in one embodiment of the present invention.

[0032] Figure 3 This is a schematic diagram of the pipeline arrangement of a precursor delivery device for thin film deposition in one embodiment of the present invention;

[0033] Figure 4 This is a schematic diagram of the source transport state of a precursor transport device for thin film deposition in one embodiment of the present invention: where a is a schematic diagram of single-pipe transport state and b is a schematic diagram of multi-pipe transport state.

[0034] Figure 5 This is a schematic diagram of the structure of a spray head for a precursor delivery device for thin film deposition in one embodiment of the present invention;

[0035] Figure 6 This is a schematic diagram of the multi-channel conveying structure of a precursor conveying device for thin film deposition in one embodiment of the present invention. Detailed Implementation

[0036] To enable those skilled in the art to better understand the technical solutions in this disclosure, the technical solutions in the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. Based on the embodiments in this disclosure, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of this disclosure.

[0037] The core of this solution lies in three-stage adaptive temperature control and multi-component collaborative design, as detailed below:

[0038] Precursor storage and vaporization components: Made of corrosion-resistant materials, with built-in heating elements and platinum resistance temperature sensors, the vaporization temperature can be adjusted according to the characteristics of the precursor, and is compatible with solid (such as aluminum triacetylacetonate), liquid (such as trimethylaluminum), and gaseous (such as silane) precursors.

[0039] Three-stage temperature-controlled delivery pipeline: The vaporization stage is integrated with the vaporization components to maintain the vaporization state of the precursor; the delivery stage adopts an insulation design to prevent sudden temperature drops; the air inlet stage is close to the reaction chamber, and its temperature matches the inlet environment of the reaction chamber to avoid precursor decomposition. The temperature control accuracy of each stage is ≤±0.5℃.

[0040] Adaptive flow control component: Coriolis flow meter detects flow, density and temperature parameters in real time, and PID controller dynamically adjusts flow regulating valve according to detection data to compensate for flow fluctuations caused by temperature and pressure changes and ensure stable flow.

[0041] Leak-proof cleaning components: The flexible double-sleeve design prevents precursor leakage, and the interlayer vacuum suction further enhances safety; the online flushing circuit can automatically clean the pipeline after deposition to avoid residual contamination.

[0042] Integrated control unit: Built-in precursor database and process parameter library, supports ALD / CVD process switching, and realizes full-process automated control.

[0043] like Figure 1 As shown, an embodiment of the present invention provides a precursor transport device and a deposition device for thin film deposition. It includes the following structural modules, which are connected sequentially to form a complete transport loop:

[0044] Carrier gas main intake device 101: equipped with manual valve, pneumatic valve, pressure reducing valve, check valve, filter and pressure gauge, used to regulate and control the pressure, flow and on / off of the intake carrier gas, and its valves are normally kept open.

[0045] Source bottle device 102: Used to store solid or liquid precursors, can be expanded to set multiple source bottles, configured with source replacement pipeline purge valve PV113, supports switching between three source supply modes: carrier gas source, saturated vapor pressure source, and pressurized source. During source replacement, the source bottle front end pipeline is purged with carrier gas.

[0046] Purging device 103: used to purge the dead zone of the inlet common pipeline and the reaction chamber to remove residual precursors and reaction byproducts.

[0047] Source cylinder carrier gas distribution and inlet device 104: provides independent gas supply channels for each source cylinder S1, S2, S3, S4, etc. Each channel is equipped with a diaphragm valve, mass flow controller (MFC), filter and pressure gauge to achieve precise control of carrier gas flow and independent control of channel opening and closing.

[0048] Gas source inlet device 105: Expandable configuration for connecting gaseous precursors to meet the needs of different membrane processes.

[0049] ALD Pulse Control Unit 106: A valve assembly consisting of two ALD pneumatic diaphragm valves and one ordinary pneumatic diaphragm valve, providing precise precursor pulse delivery for the process.

[0050] Vacuum breaking device 107: Used to break the vacuum state of the reaction chamber, facilitating process start-up and shutdown and equipment maintenance.

[0051] Source bottle tail discharge device 108: used to discharge residual precursors in the source bottle and pipeline to avoid residual pollution.

[0052] Pipeline heating device 109: It adopts a segmented independent temperature control structure to perform stepped temperature control on the conveying pipeline, so as to avoid cold spots in the pipeline that cause the precursor to condense.

[0053] First air inlet 110: Dedicated to independent access of source 1, mutually exclusive with the second air inlet.

[0054] Second air inlet 111: Dedicated to independent access of source 2, mutually exclusive with the first air inlet.

[0055]

[0056] Carrier gas main intake device 101: equipped with manual valve, pneumatic valve, pressure reducing valve, check valve, filter and pressure gauge to realize the regulation and control of the intake carrier gas.

[0057] Source bottle device 102: Used for storing solid / liquid sources, achieving [the desired effect] by controlling the opening and closing of different valves. Figure 2 The three power supply methods can be switched to meet the output requirements of different characteristic sources. The source replacement pipeline purge valve PV113 is configured. As shown in the figure, when the source bottle is replaced, the green pipeline valve is opened, and the front pipeline of the source bottle is purged by carrier gas (nitrogen shown in the figure).

[0058] Purging device 103: used for purging the dead zone and chamber of the incoming common pipeline.

[0059] Source bottle carrier gas distribution and inlet device 104: independently supplies gas to source bottles S1, S2, S3, etc. Each channel is equipped with a diaphragm valve, MFC, filter, and pressure gauge for precise control of carrier gas flow and on / off status.

[0060] Gas source air intake device 105: For situations where different membrane processes may require the use of gas sources, a gas source air intake device is configured to meet different process requirements.

[0061] ALD pulse control device 106: A pneumatic diaphragm valve group consisting of two ALD pneumatic diaphragm valves and one ordinary pneumatic diaphragm valve provides a pulse source for the process.

[0062] Vacuum breaking device 107: Used to break the vacuum state of the cavity.

[0063] Source bottle tail discharge device 108: used for discharging residual source from source bottle / pipeline.

[0064] Pipe heating device 109: The red pipe in the figure is equipped with pipe heating. It achieves stepped temperature control of the pipe through segmented and independent temperature control, avoiding cold spots in the power supply pipe that would cause the power source to condense inside the pipe.

[0065] First air intake 110: Used for the intake of one source, and is independent of the other sources.

[0066] Second air intake 111: for the intake of another source, separate from the other sources.

[0067] Working principle:

[0068] This is a precursor delivery scheme for thin film deposition consisting of multiple components, compatible with the combined use of different source forms: gaseous, solid, and liquid. The following are the gas intake steps for source carrier gas (S1 and S2):

[0069] The main air intake valve 101 is in the normally open position.

[0070] Step A: Pipeline purging:

[0071] A1: Fully open PV186, PV187, PV188, MFC186, and MFC187 to purge the purging lines.

[0072] A2: Close the source bottle manual valve, and fully open PV110, ALD110, PV111, PV112, PV113, PV114, ALD111, PV115, and MFC110 to purge the source S1 pipeline.

[0073] A3: Close the source bottle manual valve, and fully open PV120, ALD120, PV121, PV122, PV123, PV124, ALD121, PV125, and MFC120 to purge the source S2 pipeline.

[0074] Step BS1 Source Supply:

[0075] MFC110 is configured to allow traffic flow, with PV110, PV111, PV112, PV114, and PV115 always open.

[0076] When S1 supplies power, ALD110 and ALD111 are turned on, and the opening and closing of PV111 is selected according to the power supply form 102.

[0077] Complete the S1 power supply.

[0078] Step CS1 process purging:

[0079] Turn off ALD110 and ALD111, and keep PV110, PV111, and PV115 set to MFC110 purge flow rate.

[0080] Complete S1 purging.

[0081] Step DS2 supply source:

[0082] Set the flow rate of MFC187. PV187 is normally open and used for purging the dead zone of the common inlet pipeline of S2, S3, and S4.

[0083] MFC120 is configured to handle traffic, with PV120, PV121, PV122, PV124, and PV125 always open.

[0084] When S2 supplies power, ALD120 and ALD121 are turned on, and the opening and closing of PV121 is selected according to the power supply form 102.

[0085] Complete S2 power supply.

[0086] Step DS2 process purging:

[0087] Turn off ALD120 and ALD121, and keep PV120, PV121, and PV125 set to MFC120 purge flow rate.

[0088] Complete S2 purging.

[0089] Entering the process cycle: S1 power supply—S1 purging—S2 power supply—S2 purging—S1 power supply.

[0090] Step E: Cavity purging:

[0091] After the process is completed, turn on PV186, set the MFC186 purge flow rate, turn on PV188, and turn off PV125 and PV115 to purge the chamber at a high flow rate to further remove reaction byproducts.

[0092] Function F source bottle purging, taking S1 as an example:

[0093] When replacing the source bottle, the remaining source inside the source bottle needs to be emptied.

[0094] Open PV110 and PV111, set the MFC110 purge flow rate, open ALD110, PV112, PV114, ALD111, PV115, and PV196, and open the source bottle manual valve.

[0095] Complete the purging of residual source in the source bottle.

[0096] Function G: Purging of the power supply bottle pipeline, taking S1 as an example:

[0097] Close the source bottle manual valve, open PV110, set the MFC110 purge flow rate, and open ALD110, PV111, PV112, PV113, PV114, ALD111, and PV115.

[0098] Complete the purging of the power source replacement pipeline.

[0099] A precursor delivery method for thin film deposition, implemented using the delivery device of this invention, may include the following steps:

[0100] S1: Based on the precursor type and deposition process, preset parameters are called through the integrated control unit to set the vaporization temperature, the conveying temperature of each section and the target flow rate;

[0101] S2: Start the precursor storage and vaporization component. After the temperature reaches the set value and stabilizes for 5-10 minutes, turn on the adaptive flow control component. The precursor is then transported to the reaction chamber through the three-stage temperature-controlled pipeline.

[0102] S3: During the deposition process, the Coriolis flow meter detects the flow rate in real time, and the PID controller dynamically adjusts the flow regulating valve to compensate for temperature / pressure fluctuations;

[0103] S4: After deposition is complete, switch to cleaning mode and perform solvent rinsing for 5-10 minutes and inert gas purging for 3-5 minutes in sequence to complete pipeline cleaning.

[0104] In this embodiment, the precursor delivery device includes a carrier gas main intake device 101, a source bottle device 102 containing two source bottles S1 and S2, a purging device 103, a source bottle carrier gas distribution intake device 104, a gaseous source intake device 105, a reserved expansion interface, an ALD pulse control device 106, a cavity vacuum breaking device 107, a source bottle tail discharge device 108, a pipeline heating device 109, a first air inlet 110, and a second air inlet 111. Each module is connected sequentially through pipelines, and the pipeline heating device 109 performs segmented wrapping heating on the core delivery pipeline.

[0105] 1. Preprocessing stage

[0106] The main air intake device 101 valve remains open, the pipeline heating device 109 is started and the stepped temperature control parameters are set, and the process preparation state is entered after the pipeline temperature stabilizes.

[0107] 2. Pipeline purging procedure A

[0108] A1: The PV186, PV187, and PV188 valves of the fully open purging device 103, and the corresponding MFC186 and MFC187, are used to pre-purge the purging pipeline;

[0109] A2: Close the S1 source cylinder manual valve, fully open valves PV110, ALD110, PV111, PV112, PV113, PV114, ALD111, PV115 and MFC110 to purge the S1 source pipeline;

[0110] A3: Close the S2 source cylinder manual valve, fully open valves PV120, ALD120, PV121, PV122, PV123, PV124, ALD121, PV125 and MFC120 to purge the S2 source pipeline.

[0111] 3. S1 Power Supply Step B

[0112] Set the carrier gas flow rate of MFC110 and keep valves PV110, PV111, PV112, PV114, and PV115 normally open; select the carrier gas source, saturated vapor pressure source, or pressurized source mode according to the characteristics of the S1 precursor, and control the opening and closing of valve PV111 accordingly; open valves ALD110 and ALD111, and the precursor is introduced into the reaction chamber through the first air inlet 110 to complete the supply of S1.

[0113] 4. S1 Process Purging Step C

[0114] Close valves ALD110 and ALD111, keep valves PV110, PV111, and PV115 normally open and set the purge flow rate of MFC110, and purge the S1 source line and chamber to remove residual precursors and reaction byproducts.

[0115] 5. S2 Power Supply Step D

[0116] Set the purge flow rate of MFC187, keep the PV187 valve normally open, and purge the dead zone of the common inlet pipeline of S2, S3, and S4; set the carrier gas flow rate of MFC120, and keep the PV120, PV121, PV122, PV124, and PV125 valves normally open; select the power supply method according to the characteristics of the S2 precursor and control the opening and closing of the PV121 valve; open the ALD120 and ALD121 valves, and the precursor is introduced into the reaction chamber through the second inlet 111 to complete the power supply of S2.

[0117] 6. S2 Process Purging Step E

[0118] Close valves ALD120 and ALD121, keep valves PV120, PV121, and PV125 normally open and set the purge flow rate of MFC120, and purge the S2 source line and chamber.

[0119] 7. Process Cycle

[0120] Repeat steps B to E to enter the cycle of "S1 source supply - S1 purge - S2 source supply - S2 purge" until the film deposition reaches the preset thickness.

[0121] 8. Final purging procedure for the chamber F

[0122] After the process is completed, open valves PV186 and PV188, set the high-flow purging parameters of MFC186, close valves PV125 and PV115, and purge the reaction chamber with a high flow rate to thoroughly remove residual impurities.

[0123] 9. Source bottle purging and source replacement functions F, G

[0124] Taking source bottle purging as an example (S1): Open valves PV110 and PV111, set the purging flow rate of MFC110, open valves ALD110, PV112, PV114, ALD111, PV115, and PV196, open the S1 source bottle manual valve, and discharge the residual precursor in the source bottle into the source bottle tail discharge device 108 through the carrier gas;

[0125] Taking S1 as an example, the source replacement pipeline purging process is as follows: Close the S1 source bottle manual valve, open the PV110 valve, set the MFC110 purging flow rate, and open the ALD110, PV111, PV112, PV113, PV114, ALD111, and PV115 valves to purge the source replacement pipeline and prevent residual contamination of the new source.

[0126]

[0127]

[0128] like Figure 3 As shown:

[0129] Each branch of the intake channel 61 is equipped with a shut-off valve 1-1 and a pressure gauge 1-2 to detect pipeline pressure. A mass flow meter 1-3 is installed on the intake channel 1 pipeline to detect the gas flow rate. A diaphragm valve 1-4 is installed to disconnect the pipeline, and a check valve 1-5 is installed to prevent backflow of gas powder.

[0130] The difference between intake channel 62 and 61 is the addition of a filter element 2-6 to prevent powder from flowing back into the pipe. The intake channel extends downwards, creating a counter-current with the airflow below, further mixing the powder evenly.

[0131] Gas channel 1, 61, is a conventional fluidized bed channel with bottom air intake. Gas channel 2, 62, is a new channel that can be added depending on the type of gas source.

[0132] In a typical fluidized bed, the carrier gas carrying the carbon source gas enters the fluidized bed through gas channel 61 to coat and deposit the powder. We have added a second gas channel 62 (not limited to one) at a suitable position above the fluidized bed to carry the carbon source gas, so that the powder can be fully mixed with the gas and react inside the fluidized bed.

[0133] Figure 4 When 'a' is a single gas path, the sulfurized powder rises in the middle of the reactor and falls near the reactor wall on both sides, forming a dead zone (vortex) that is not easy to fluidize.

[0134] Figure 4 In Figure b, the state is achieved by adding a second gas channel at the top of the reactor. This disrupts the vortex, avoids dead zones, and improves fluidization.

[0135] like Figure 5 The spray head 51 (gas channel two) has a spray direction of spray holes 52 that is 20-35° vertically offset. The spray holes are arranged in a ring shape, creating a counterforce with the rising gas and disrupting the airflow vortex.

[0136] like Figure 6 Depending on the size of the reactor, the number of pipelines can be increased or decreased as appropriate. If the outer diameter of the reactor exceeds 500mm, it is recommended to increase the number of pipelines to two.

[0137] The gas flow rate in gas channel two is 15-30% of that in gas channel one. The first disruption of the airflow...

[0138] The gas flow rate in the third gas channel is 10-20% of that in the first gas channel. The second disruption of the airflow...

[0139] Example 1: ALD process delivery of solid precursor (aluminum triacetylacetonate)

[0140] Precursor parameters: vaporization temperature 180℃, optimal delivery temperature 160℃, target flow rate 5 sccm.

[0141] Device setup:

[0142] The vaporization component temperature is set at 180℃, and the insulation layer thickness is 8mm.

[0143] Three-stage pipeline temperature: vaporization section 180℃, conveying section 160℃, and air inlet section 100℃ (reaction chamber process temperature 500℃, corresponding to 20% of the process temperature).

[0144] Flow rate set at 5 sccm, PID control parameters: proportional coefficient 1.2, integral time 0.5s, derivative time 0.1s.

[0145] Conveying process:

[0146] S1: Start the vaporization assembly, heat to 180℃ and stabilize for 8 minutes;

[0147] S2: Activate the flow control component, the Coriolis flow meter detects in real time, the PID controller dynamically adjusts, and the flow rate is stabilized at 5±0.005sccm;

[0148] S3: In the ALD process, the precursor is pulsed to the reaction chamber, and the flow rate fluctuation during deposition is ≤ ±0.01 sccm;

[0149] S4: After deposition, start the cleaning mode, rinse with solvent (anhydrous ethanol) for 8 minutes, purge with nitrogen for 4 minutes, and the residual amount in the pipeline is ≤0.01mg / cm².

[0150] Example 2: CVD process delivery of liquid precursor (trimethylaluminum)

[0151] Precursor parameters: vaporization temperature 120℃, optimal delivery temperature 100℃, target flow rate 10 sccm.

[0152] Device setup:

[0153] The vaporization component temperature is set at 120℃, and the insulation layer thickness is 5mm.

[0154] Three-stage pipeline temperature: vaporization section 120℃, conveying section 100℃, and air inlet section 150℃ (reaction chamber process temperature 600℃, corresponding to 25% of the process temperature).

[0155] Flow rate set to 10 sccm, PID control parameters: proportional coefficient 1.5, integral time 0.3s, derivative time 0.08s.

[0156] Conveying process:

[0157] S1: Start the vaporization assembly, heat to 120℃ and stabilize for 5 minutes;

[0158] S2: Enable the flow control component, and stabilize the flow rate at 10±0.01 sccm;

[0159] S3: In the CVD process, the precursor is continuously delivered, the deposition rate is stabilized at 20 nm / min, and the film uniformity error is ≤3%;

[0160] S4: After deposition, rinse with solvent (isopropanol) for 6 minutes and purge with argon for 3 minutes. No visible residue was found in the pipeline.

[0161] Example 3: Multi-precursor switching delivery (silicon nitride thin film deposition)

[0162] Precursor combination: silane (gaseous, transported at room temperature), ammonia (gaseous, transported at room temperature).

[0163] Device setup:

[0164] The vaporization component is de-heated, and the temperature of all three sections of the pipeline is set to 25°C.

[0165] The target flow rate for silane is 8 sccm, and the target flow rate for ammonia is 20 sccm. The PID parameters are adapted to the characteristics of the gaseous precursor.

[0166] Conveying process:

[0167] The integrated control unit switches to CVD process mode and calls up the gaseous precursor parameters;

[0168] Silane and ammonia are supplied synchronously in proportion, with flow rate fluctuations ≤ ±0.02 sccm;

[0169] After deposition, nitrogen was purged for 5 minutes to ensure the pipeline was clean enough for the next use.

[0170] This utility model relates to a precursor transport device and a deposition apparatus for thin film deposition:

[0171] Multi-form compatibility: It can be adapted to solid, liquid and gaseous precursors without replacing core components, reducing equipment investment costs.

[0172] Precise temperature control: Three-stage adaptive temperature control avoids precursor condensation and decomposition, improving precursor utilization by more than 20%.

[0173] Stable flow rate: The adaptive flow control component enables flow rate accuracy to reach ±0.1%FS, improving thin film deposition uniformity by more than 15%.

[0174] Clean and efficient: The online cleaning loop eliminates the need to disassemble pipelines, extending maintenance cycles by 3 times and improving production efficiency.

[0175] Safe and reliable: Flexible double sleeve + vacuum suction design reduces the risk of leakage by more than 90%.

[0176] In large fluidized beds, increasing gas channels can effectively reduce powder accumulation and allow for full powder reaction, thereby improving performance.

[0177] It will be apparent to those skilled in the art that this disclosure is not limited to the details of the exemplary embodiments described above, and that this disclosure can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of this disclosure is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within this disclosure. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0178] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A precursor delivery device for thin film deposition, characterized in that, It includes a carrier gas main inlet device (101), a source bottle device (102), a source bottle carrier gas distribution inlet device (104), a gaseous source inlet device (105) connected in sequence, and a reaction chamber provided with a first inlet (110) and a second inlet (111); The main air intake device (101) includes a carrier air pipeline connected to the carrier air source and a manual valve, a pneumatic valve, a pressure reducing valve, a check valve, a filter and a pressure gauge configured on the carrier air pipeline. In the working state, the valves are normally kept open. The source bottle device (102) includes a plurality of source bottles and a source bottle pipe connected to the source bottles for introducing carrier gas. The source bottle pipe is equipped with a source switching pipeline purge valve PV113, which supports switching between three source supply modes: carrier gas source supply, saturated vapor pressure source supply, and pressurized source supply. Any source bottle contains a liquid precursor or a solid precursor. The source bottle carrier gas distribution and inlet device (104) is equipped with an independent first gas supply channel for each source bottle to connect to the first gas inlet (110) and the second gas supply channel connected to the second gas inlet (111). The first gas supply channel and the second gas supply channel are equipped with a diaphragm valve, a mass flow controller (MFC), a filter and a pressure gauge. The gas source intake device (105) includes several gaseous precursor sources and a first air pipe for transporting the gaseous sources. The first air pipe is equipped with a manual valve, a pneumatic valve, a pressure reducing valve, a one-way valve, a filter, and a pressure gauge. The first air pipe is connected to a second air supply channel.

2. The precursor delivery device for thin film deposition according to claim 1, characterized in that, An ALD pulse control device (106) is independently installed on the first gas supply channel. The ALD pulse control device (106) consists of two ALD pneumatic diaphragm valves and one ordinary pneumatic diaphragm valve, and is used to provide precursor pulse delivery.

3. The precursor delivery device for thin film deposition according to claim 1, characterized in that, It also includes a purging device (103) for purging the dead zone of the inlet common pipeline, the source bottle pipeline and the reaction chamber, including a purging pipeline connected between the carrier gas pipeline and the second gas supply channel, and the purging pipeline is equipped with a diaphragm valve and a mass flow controller (MFC).

4. The precursor delivery device for thin film deposition according to claim 1, characterized in that, It also includes a cavity vacuum breaking device (107), which is provided with a gas breaking pipe connected to the reaction chamber.

5. The precursor delivery device for thin film deposition according to claim 1, characterized in that, It also includes a source bottle tail discharge device (108), which includes a tail discharge pipe that is connected to the purge pipeline, the second gas supply pipeline and the reaction chamber respectively.

6. The precursor delivery device for thin film deposition according to claim 1, characterized in that, It also includes a pipeline heating device (109), which is a segmented independent temperature control structure. The segmented independent temperature control structure includes a source bottle segment heating device, which is used to adjust the temperature of the source bottle.

7. The precursor delivery device for thin film deposition according to claim 6, characterized in that, The segmented independent temperature control structure includes a first heating device disposed on the first gas supply channel and / or the second gas supply channel and / or the source bottle tube.

8. The precursor delivery device for thin film deposition according to claim 7, characterized in that, The first heating device includes an electric heating device disposed on the outside of the pipeline of the first gas supply channel and / or the second gas supply channel and / or the source bottle pipe.

9. A deposition apparatus, comprising a precursor delivery device for thin film deposition according to any one of claims 1-8.

10. The deposition apparatus according to claim 9, characterized in that, It also includes a control device, which is communicatively connected to the control valves of the carrier gas main intake device (101) and / or the source bottle device (102) and / or the source bottle carrier gas distribution intake device (104) and / or the gas source intake device (105).

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