A high power rectifier bridge

Abstract

The utility model relates to rectifier bridge technical field discloses a high -power rectifier bridge, including rectifier arm four, rectifier arm one, rectifier arm three, rectifier arm two and plastic package, rectifier arm four and rectifier arm one side all are connected with direct current pin, rectifier arm three and rectifier arm two side all are connected with alternating -current pin, rectifier arm four, rectifier arm one, rectifier arm three and rectifier arm two side all are connected with the welding spot, the utility model discloses a mixed rectifier bridge is formed to MOSFET and diode on multiple rectifier arms, first passes through diode and establishes the current, and then intelligently guides the current switching to the parallel MOSFET and carries out high -efficient flow, thereby greatly reduces the conduction loss and the heat generation, cooperates the heat -absorbing sheet, the fin and the heat dissipation groove of one side, further promotes the heat dissipation efficiency, improves rectification speed simultaneously, slows down the aging, guarantees the use safety.

Description

Technical Field

[0001] This utility model relates to the field of rectifier bridge technology, specifically a high-power rectifier bridge. Background Technology

[0002] A rectifier bridge is a fundamental power electronic device that converts alternating current (AC) into direct current (DC). It is widely used in medium- to high-power applications such as industrial motor drives, frequency converters, welding machines, uninterruptible power supplies (UPS), and new energy power generation systems. Its performance directly affects the efficiency, size, reliability, and cost of the entire power conversion system.

[0003] Currently, most mainstream high-power rectifier bridges on the market use modules made of four silicon (Si)-based diode chips packaged in a specific topology. The core loss of the rectifier bridge is the conduction loss of the diodes. The large amount of heat generated by the conduction loss will cause the junction temperature of the rectifier bridge chip to rise sharply. Excessive junction temperature will accelerate device aging and reduce lifespan. This not only reduces the overall efficiency and wastes energy, but may even cause thermal runaway and lead to permanent device failure. Utility Model Content

[0004] The purpose of this invention is to provide a high-power rectifier bridge to solve the problems mentioned in the background art.

[0005] To achieve the above objectives, this utility model provides the following technical solution: it includes a fourth rectifier arm, a first rectifier arm, a third rectifier arm, a second rectifier arm, and a molding compound. A DC pin is connected to one side of the fourth rectifier arm and the first rectifier arm, and an AC pin is connected to one side of the third rectifier arm and the second rectifier arm. Solder joints are connected to one side of the fourth rectifier arm, the first rectifier arm, the third rectifier arm, and the second rectifier arm. The fourth rectifier arm, the first rectifier arm, the third rectifier arm, and the second rectifier arm are located inside the molding compound.

[0006] Preferably, the solder joint includes a MOSFET and a diode, a connection terminal is connected to one side of the MOSFET, one end of the connection terminal passes through the plastic encapsulation and is connected to a connection tab.

[0007] Preferably, a flow guide bridge is provided between each of the four rectifier arms, one rectifier arm, three rectifier arms, and two rectifier arms.

[0008] Preferably, a fitting groove is provided on one side of the molding compound corresponding to the connecting terminal, and a through hole is provided at the center of the molding compound.

[0009] Preferably, the DC pin is divided into a cathode and an anode, and is located on both sides of the two AC pins.

[0010] Preferably, the two AC pins are divided into an L terminal and an N terminal.

[0011] Preferably, the same external controller is connected to one side of the plurality of connecting pieces.

[0012] Preferably, the molded body has mounting grooves on both sides, and multiple sets of heat-absorbing sheets are connected and arranged in the mounting grooves. The other end of each heat-absorbing sheet is connected to the same heat sink.

[0013] Preferably, the back of the encapsulated body has a heat dissipation groove.

[0014] In summary, this application includes the following beneficial technical effects: A hybrid rectifier bridge is formed by MOSFETs and diodes on multiple rectifier arms. The current is first established through the diodes, and then the current is intelligently guided to switch to the parallel MOSFETs for efficient flow, thereby greatly reducing conduction losses and heat generation. Combined with heat sinks, heat absorbers and heat sinks on one side, the heat dissipation efficiency is further improved, while the rectification speed is increased, aging is slowed down, and the safety of use is ensured. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the overall structure of a high-power rectifier bridge according to the present invention; Figure 2 This is a schematic diagram of the internal structure of a high-power rectifier bridge according to the present invention; Figure 3 This is a schematic diagram of the connection structure of a high-power rectifier bridge circuit according to the present invention; Figure 4 This is a schematic diagram of the connection structure of a high-power rectifier bridge MOSFET and diode according to the present invention.

[0016] In the diagram: 1. Molded enclosure; 21. Rectifier arm four; 31. Rectifier arm one; 41. Rectifier arm three; 51. Rectifier arm two; 2. Solder joint; 3. MOSFET; 4. Diode; 5. Connecting terminal; 6. Connecting piece; 7. DC pin; 8. AC pin; 9. Current-conducting bridge; 10. Fitting groove; 11. Heat-absorbing plate; 12. Heat sink; 13. Heat dissipation groove; 14. Mounting groove. Detailed Implementation

[0017] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0018] Please see Figure 1-4This utility model provides a technical solution comprising a fourth rectifier arm 21, a first rectifier arm 31, a third rectifier arm 41, a second rectifier arm 51, and a molding compound 1. A DC pin 7 is connected to one side of each of the fourth rectifier arm 21 and the first rectifier arm 31. An AC pin 8 is connected to one side of each of the third rectifier arm 41 and the second rectifier arm 51. The DC pin 7 is divided into a cathode and an anode, located on opposite sides of the two AC pins 8. The two AC pins 8 are divided into an AC output terminal L and an AC output terminal N. The AC output terminal L is connected to the second rectifier arm 51, and the AC output terminal N is connected to the third rectifier arm 41. The DC pin 7 is divided into a DC anode output terminal and a DC cathode output terminal. A solder joint 2 is connected to one side of each of the fourth rectifier arm 21, the first rectifier arm 31, the third rectifier arm 41, and the second rectifier arm 51. The fourth rectifier arm 21, the first rectifier arm 31, the third rectifier arm 41, and the second rectifier arm 51 are located inside the molding compound 1. Among them, through attachment Figure 4 It can be seen that the MOSFET3 and diode4 installed in solder joint 2 of rectifier arm 4 21 are Q4 and D4, the MOSFET3 and diode4 installed in solder joint 2 of rectifier arm 3 41 are Q3 and D3, the MOSFET3 and diode4 installed in solder joint 2 of rectifier arm 2 51 are Q2 and D2, and the MOSFET3 and diode4 installed in solder joint 2 of rectifier arm 1 31 are Q1 and D1. Where A is the anode of the diode; D is the drain of the MOSFET; S is the source of the MOSFET; K is the cathode of the diode; and G is the gate of the MOSFET.

[0019] Reference Figure 2 and Figure 4 As shown, solder joint 2 includes MOSFET 3 and diode 4. A connection terminal 5 is connected to one side of MOSFET 3. One end of the connection terminal 5 passes through the plastic package 1 and is connected to a connection piece 6. An external controller is connected to one side of the connection piece 6. The connection piece 6 and the external controller are connected by a signal line. When the external controller detects that current is flowing, it immediately sends a high-level drive signal to the gate (G) of Q1 and Q2. During the high-efficiency stage (channel conduction), Q1 and Q2 are turned on. Their channel resistance is much lower than the forward resistance of the diode. Therefore, most of the current automatically switches from the diode path to the low-resistance channel path of the MOSFET, and the heat generation is greatly reduced. Before the current crosses zero, the controller turns off Q1 and Q2, and the current briefly flows back to the diode, completing the commutation.

[0020] Reference Figures 2-4 As shown, a current-conducting bridge 9 is connected between rectifier arm 21, rectifier arm 31, rectifier arm 41 and rectifier arm 51. The current-conducting bridge 9 serves as the current path, connecting rectifier arm 41 and rectifier arm 51, which are connected to AC pin 8, with rectifier arm 21 and rectifier arm 31 on both sides, thereby forming a rectification path.

[0021] Reference Figure 2 As shown, a fitting groove 10 is provided on one side of the encapsulated body 1 corresponding to the connecting terminal 5, and a through hole is provided at the center of the encapsulated body 1. The fitting groove 10 reduces the space occupied by the connecting piece 6 and facilitates the connection and installation of the connecting piece 6.

[0022] Reference Figure 2 As shown, mounting grooves 14 are provided on both sides of the molded body 1. Multiple sets of heat-absorbing fins 11 are connected and installed in the mounting grooves 14. The other end of the heat-absorbing fins 11 is connected to the same heat sink 12. A heat dissipation groove 13 is provided on the back of the molded body 1. The heat-absorbing fins 11 absorb the heat generated by the rectifier arm 21, rectifier arm 31, rectifier arm 41 and rectifier arm 51 inside the molded body 1 and transfer it to the heat sink 12 on the outside. At the same time, the heat dissipation groove 13 on the back side has the effect of improving heat dissipation.

[0023] The implementation principle of this application is as follows: In this application, each rectifier arm is composed of a diode and a MOSFET connected in parallel. The purpose of parallel connection is to allow the current to selectively flow through the channel of the diode or the MOSFET. The controller analyzes the input voltage and current phase to determine at a precise moment which MOSFET gate to send the turn-on voltage signal to. It ensures that the anode A of the diode is connected to the source S of the MOSFET, and the cathode K of the diode is connected to the drain D of the MOSFET, so that the current direction of the diode and the MOSFET is the same. The current can flow from the anode to the cathode of the diode. Similarly, when the MOSFET is turned on, the current can flow from the drain D to the source S. The current bridge 9 is a ceramic copper-clad board, which connects to MOSFET3 and diode4 through the copper layer on its surface. The copper layer on the substrate is etched into specific circuit traces. The chips of MOSFET3 and diode4 are fixed on these copper traces through a sintering process, thereby achieving electrical connection. When AC-L is positive and AC-N is negative, the current naturally flows to the load through the body diode path of diodes D1 and D2. At this time, conduction loss (heating) will occur. When the external controller detects the current flowing through, it immediately sends a high-level drive signal to the gate G of Q1 and Q2, and Q1 and Q2 are turned on. Their channel resistance is much lower than the forward resistance of the diode. Therefore, most of the current automatically switches from the diode path to the low-resistance channel path of the MOSFET, and the heat generation is greatly reduced. Before the current crosses zero, the controller turns off Q1 and Q2, and the current briefly flows back to the diode, completing the commutation.

[0024] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0025] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A high-power rectifier bridge, comprising rectifier arm four (21), rectifier arm one (31), rectifier arm three (41), rectifier arm two (51) and a molding compound (1), characterized in that: The rectifier arm four (21) and rectifier arm one (31) are each connected to a DC pin (7) on one side, the rectifier arm three (41) and rectifier arm two (51) are each connected to an AC pin (8) on one side, the rectifier arm four (21), rectifier arm one (31), rectifier arm three (41) and rectifier arm two (51) are each connected to a solder joint (2) on one side, and the rectifier arm four (21), rectifier arm one (31), rectifier arm three (41) and rectifier arm two (51) are located inside the plastic encapsulation (1); The solder joint (2) includes a MOSFET (3) and a diode (4). A connection terminal (5) is connected to one side of the MOSFET (3). One end of the connection terminal (5) passes through the plastic encapsulation (1) and is connected to a connection piece (6).

2. A high-power rectifier bridge according to claim 1, characterized in that: A flow guide bridge (9) is provided between each of the four rectifier arms (21), one rectifier arm (31), three rectifier arms (41) and two rectifier arms (51).

3. A high-power rectifier bridge according to claim 1, characterized in that: The molding body (1) has a fitting groove (10) on one side corresponding to the connecting terminal (5), and a through hole is provided at the center of the molding body (1).

4. A high-power rectifier bridge according to claim 1, characterized in that: The DC pin (7) is divided into a cathode and an anode, and is located on both sides of the two AC pins (8).

5. A high-power rectifier bridge according to claim 4, characterized in that: The two AC pins (8) are divided into L-terminal and N-terminal.

6. A high-power rectifier bridge according to claim 2, characterized in that: Multiple connecting pieces (6) are connected to the same external controller on one side.

7. A high-power rectifier bridge according to claim 1, characterized in that: The molding body (1) has mounting grooves (14) on both sides. Multiple sets of heat-absorbing sheets (11) are connected in the mounting grooves (14), and the other end of each heat-absorbing sheet (11) is connected to the same heat sink (12).

8. A high-power rectifier bridge according to claim 1, characterized in that: The plastic encapsulation body (1) has a heat dissipation groove (13) on its back side.

Images