A lead selenide infrared heating device

Abstract

The utility model discloses a lead selenide infrared heating device relates to infrared heating technical field. The device includes lead selenide infrared emission subassembly, insulating substrate and protective housing, and lead selenide infrared emission subassembly and insulating substrate are all arranged in the inside of protective housing, and lead selenide infrared emission subassembly is installed on insulating substrate, and lead selenide infrared emission subassembly is connected external power through rectifier, and still be provided with infrared transmission window on protective housing, and infrared transmission window is opposite with lead selenide infrared emission subassembly, and is provided with the plugging piece of the infrared transmission window sealing at infrared transmission window, and this plugging piece can pass through infrared. The utility model discloses the device utilizes lead selenide semiconductor material and passes electricity and excites infrared to heat, has the advantages such as infrared waveband concentration, response speed is fast, energy efficiency ratio is high, long life, security is good, is applicable to medical physiotherapy, heating and the scene such as.

Description

Technical Field

[0001] This utility model relates to the field of infrared heating technology, specifically to a lead selenide infrared heating device. Background Technology

[0002] Infrared heating technology has been widely used in various fields due to its high energy conversion efficiency and good heating uniformity. Currently, this technology mostly uses a heating element or a semiconductor to emit infrared radiation through an electric current. Infrared semiconductors are semiconductor materials that can generate, transmit, or detect infrared light. Their core characteristic is a narrow bandgap, which allows for energy conversion between electricity and infrared light or between infrared light and electricity through carrier transitions. Furthermore, they exhibit high energy conversion efficiency, low heat generation, and high safety.

[0003] Lead selenide (PbSe), as an ultra-narrow bandgap semiconductor material (0.27 eV), can directly generate a continuous infrared spectrum of 3-6 μm under electric field excitation, and possesses properties such as high temperature resistance (melting point 1065℃) and good chemical stability. However, in current technology, lead selenide is mainly used as an infrared optical transmission material and has not yet been developed into a core component for infrared heating that emits light when electrically powered. Utility Model Content

[0004] The purpose of this invention is to provide a lead selenide infrared heating device. This device utilizes lead selenide semiconductor material to excite infrared rays for heating.

[0005] The technical solution adopted by this utility model is: A lead selenide infrared heating device includes a lead selenide infrared emitting component, an insulating substrate, and a protective housing; Both the lead selenide infrared emitting component and the insulating substrate are located inside the protective housing, with the lead selenide infrared emitting component mounted on the insulating substrate; The lead selenide infrared emitting component is connected to an external power source via a rectifier. An infrared transmission window is also provided on the protective shell, which faces the lead selenide infrared emitting component; a sealing element is provided at the infrared transmission window to seal the infrared transmission window, and the sealing element can transmit infrared light.

[0006] Preferably, the lead selenide infrared emitting component includes multiple sets of encapsulated lead selenide PN junctions, all of which are connected together in series.

[0007] Preferably, the insulating substrate is a silicon nitride ceramic substrate, and multiple sets of encapsulated lead selenide PN junctions are uniformly arranged on the silicon nitride ceramic substrate.

[0008] Preferably, the thickness of the silicon nitride ceramic substrate is 2-3 mm.

[0009] Preferably, the inner surface of the protective shell is further provided with an infrared reflective coating.

[0010] Preferably, the protective housing includes a back plate, with arc-shaped segments provided at both ends or around the perimeter of the back plate; the insulating substrate is mounted on the back plate, and the sealing member is connected to the end of the arc-shaped segment.

[0011] Preferably, the protective shell is made of PPS material.

[0012] Preferably, the protective casing also has heat dissipation holes.

[0013] Preferably, the sealing element is calcium fluoride glass.

[0014] Compared with the prior art, the present invention has the following beneficial technical effects: (1) Concentrated infrared band: This utility model adopts a lead selenide infrared emitting component, that is, it uses lead selenide semiconductor material to excite infrared rays by passing electricity, which can stably emit a continuous infrared spectrum of about 6μm, which has a high-efficiency heating effect on the human body and is safe and reliable; and the heating efficiency is greatly improved compared with traditional devices. Traditional resistive heaters require 2kw, while the peak power of this utility model is only 300w.

[0015] (2) Fast response speed: It only takes 5-8 seconds from power-on to stable infrared emission using this utility model device, and the thermal response speed is 5-6 times that of traditional resistance heating.

[0016] (3) High energy efficiency: The electro-optical conversion efficiency of the device of this utility model can reach more than 85%.

[0017] (4) Long lifespan: This utility model uses lead selenide semiconductor material, which has high temperature resistance and anti-aging properties, and its service life can reach more than 10,000 hours.

[0018] (5) Good safety: Unlike traditional heating and infrared emission, the device itself generates very little heat and the working temperature is stable at no more than 60 degrees Celsius. There is no risk of open flame and it meets the UL94V-0 flame retardant standard. Attached Figure Description

[0019] Figure 1 This is a schematic diagram illustrating the structural principle of a lead selenide infrared heating device according to this utility model. Figure 2 This is a schematic diagram illustrating the structural principle of the protective outer shell in this utility model; Figure 3 This is a circuit diagram showing the connection between the lead selenide infrared emitting component and the external power supply in this utility model.

[0020] In the diagram: 1-Lead selenide infrared emitting component, 2-Insulating substrate, 3-Protective housing, 4-Rectifier, 5-Sealing component; 101-Encapsulated lead selenide PN junction; 301-Backplate, 302-Arc segment, 303-Infrared reflective coating. Detailed Implementation

[0021] Referring to the accompanying drawings, a lead selenide infrared heating device includes a lead selenide infrared emitting component 1, an insulating substrate 2, and a protective housing 3. Both the lead selenide infrared emitting component 1 and the insulating substrate 2 are disposed inside the protective housing 3, with the lead selenide infrared emitting component 1 mounted on the insulating substrate 2. The lead selenide infrared emitting component 1 is connected to an external power supply via a rectifier 4. An infrared transmission window is also provided on the protective housing 3, directly facing the lead selenide infrared emitting component 1. A sealing element 5 is provided at the infrared transmission window to seal it, while still allowing infrared light to pass through.

[0022] The aforementioned lead selenide infrared emitting component 1 includes multiple sets of encapsulated lead selenide PN junctions 101, all of which are connected in series. The lead selenide PN junctions are P-type doped with indium and N-type doped with tellurium. The lead selenide PN junctions are commercially available and encapsulated using conventional methods. The encapsulated lead selenide PN junctions exhibit continuous and stable emission of 2-15μm infrared radiation, primarily concentrated in the 6μm range.

[0023] The aforementioned insulating substrate 2 is a silicon nitride ceramic substrate used for insulation. The thickness of this silicon nitride ceramic substrate can be set to 2 mm. Multiple sets of packaged lead selenide PN junctions 101 are uniformly arranged on the silicon nitride ceramic substrate.

[0024] As a further design of this utility model, the protective shell 3 includes a back plate 301, with an arc-shaped segment 302 arranged around the periphery of the back plate 301. The insulating substrate 2 is mounted on the back plate 301, and the sealing member 5 is connected to the end of the arc-shaped segment 302. An infrared reflective coating 303 is also provided on the inner side of the protective shell 3. Through the combined arrangement of the arc-shaped segment 302 and the infrared reflective coating 303, the infrared rays emitted by the lead selenide infrared emitting component 1 when powered on can be concentrated and transmitted through the infrared transmission window. The protective shell 3 is made of high-temperature resistant engineering plastic (PPS material). Several heat dissipation holes with a diameter of 3-5 mm are also provided on the protective shell.

[0025] Furthermore, the sealing component 5 is made of calcium fluoride glass with high infrared transmittance, ensuring that the infrared transmittance is ≥90%.

[0026] When using this utility model device, it can be directly connected to an external 220V AC power supply, such as... Figure 1 , Figure 3As shown, the power supply is converted to DC by a rectifier to power the lead selenide infrared emitting component. After the lead selenide infrared emitting component is powered on, multiple encapsulated lead selenide PN junctions undergo electron transitions and emit infrared rays. The infrared rays are reflected and converged by the arc-shaped segment 302 of the protective shell 3 and the infrared reflective coating 303, and then propagate outward through the calcium fluoride window, generating heat for therapeutic purposes such as heating the human body.

[0027] This invention employs a lead selenide infrared emitting component 1, utilizing lead selenide semiconductor material to excite infrared radiation through electrical current. It stably emits a continuous infrared spectrum of approximately 6μm, providing highly efficient and safe heating for the human body. Furthermore, its heating efficiency is significantly improved compared to traditional devices; a traditional resistance heater requires 2kW, while this invention's peak power is only 300W. Moreover, the device takes only 5-8 seconds from power-on to stable infrared emission, a thermal response speed 5-6 times faster than traditional resistance heating. The electro-optical conversion efficiency of this device can reach over 85%. The lead selenide semiconductor material used in this invention possesses high-temperature resistance and anti-aging properties, with a service life exceeding 10,000 hours. Unlike traditional infrared emitting heating devices, this invention generates very little heat, with a stable operating temperature not exceeding 60 degrees Celsius, eliminating the risk of open flame and meeting the UL94V-0 flame retardant standard.

[0028] Based on the above structure and effects, this utility model of lead selenide infrared heating device can be applied in medical physiotherapy, home heating and other fields.

[0029] For any parts not mentioned above, existing technologies can be adopted or referenced.

[0030] The above-described embodiments are merely preferred embodiments of the present utility model and are not intended to limit the scope of the present utility model. Any modifications and improvements made by those skilled in the art to the technical solutions of the present utility model without departing from the spirit of the present utility model should fall within the protection scope defined by the claims of the present utility model.

Claims

1. A lead selenide infrared heating device, characterized in that: Includes lead selenide infrared emitting components, insulating substrate, and protective housing; Both the lead selenide infrared emitting component and the insulating substrate are located inside the protective housing, with the lead selenide infrared emitting component mounted on the insulating substrate; The lead selenide infrared emitting component is connected to an external power source via a rectifier. An infrared transmission window is also provided on the protective shell, which faces the lead selenide infrared emitting component; a sealing element is provided at the infrared transmission window to seal the infrared transmission window, and the sealing element can transmit infrared light.

2. The lead selenide infrared heating device according to claim 1, characterized in that: The lead selenide infrared emitting component includes multiple sets of encapsulated lead selenide PN junctions, all of which are connected together in series.

3. The lead selenide infrared heating device according to claim 2, characterized in that: The insulating substrate is a silicon nitride ceramic substrate, and multiple sets of encapsulated lead selenide PN junctions are uniformly arranged on the silicon nitride ceramic substrate.

4. The lead selenide infrared heating device according to claim 3, characterized in that: The thickness of the silicon nitride ceramic substrate is 2-3 mm.

5. The lead selenide infrared heating device according to claim 1, characterized in that: The inner surface of the protective shell is also provided with an infrared reflective coating.

6. The lead selenide infrared heating device according to claim 1, characterized in that: The protective housing includes a back plate with arc-shaped segments at both ends or around the perimeter; the insulating substrate is mounted on the back plate, and the sealing element is connected to the end of the arc-shaped segments.

7. The lead selenide infrared heating device according to claim 1, characterized in that: The protective shell is made of PPS material.

8. The lead selenide infrared heating device according to claim 1, characterized in that: The protective casing also has ventilation holes.

9. The lead selenide infrared heating device according to claim 1, characterized in that: The sealing component is calcium fluoride glass.

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