A TVS device

Abstract

The utility model discloses a TVS device, wherein, TVS device includes: substrate, epitaxial layer, epitaxial layer is located substrate one side, active layer, active layer is located epitaxial layer far from substrate one side, the doped concentration of the area of active layer close to epitaxial layer one side is less than the doped concentration of the area of active layer far from epitaxial layer one side, first electrode, first electrode is located active layer far from substrate one side, second electrode, second electrode is located substrate far from epitaxial layer one side. The utility model discloses can effectively improve TVS device's withstand voltage.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and in particular to a TVS device. Background Technology

[0002] A transient voltage suppressor (TVS) is an important circuit protection device. TVS devices can quickly suppress instantaneous overvoltages in a circuit, clamping the voltage within a safe range, thereby protecting delicate electronic components from damage.

[0003] TVS devices are widely used in electronic circuits, but the voltage withstand capability of current TVS devices is insufficient to meet the requirements of electronic circuits, leading to the failure of TVS device protection. Utility Model Content

[0004] This invention provides a TVS device to solve the problem that the voltage withstand capability of current TVS devices is insufficient to meet the requirements of electronic circuits.

[0005] In a first aspect, this utility model provides a TVS device, wherein the TVS device includes:

[0006] Substrate;

[0007] Epitaxial layer, located on one side of the substrate;

[0008] The active layer is located on the side of the epitaxial layer away from the substrate; the doping concentration of the active layer on the side closer to the epitaxial layer is less than the doping concentration of the active layer on the side farther from the epitaxial layer.

[0009] The first electrode is located on the side of the active layer away from the substrate;

[0010] The second electrode is located on the side of the substrate away from the epitaxial layer.

[0011] Optionally, the active layer includes a first active layer and a second active layer;

[0012] The first active layer is located on the side of the epitaxial layer away from the substrate, and the second active layer is located on the side of the first active layer away from the substrate; the doping concentration of the first active layer is less than the doping concentration of the second active layer.

[0013] Optionally, the first active layer includes an active layer with a doping concentration less than or equal to a first doping concentration.

[0014] Optionally, the overall thickness of the epitaxial layer and the active layer is less than or equal to a first thickness value; the first thickness value is 6.5um-8.5um.

[0015] Optionally, the TVS device may also include: an isolation trench;

[0016] The isolation trench is located on both sides of the TVS device. The isolation trench penetrates the active layer and the epitaxial layer and extends into the substrate.

[0017] Optionally, the TVS device also includes an insulating layer;

[0018] The insulating layer is located within the isolation trench and extends to the side of the active layer away from the substrate;

[0019] An isolation insulating layer located on the side of the active layer away from the substrate has a first groove. A first electrode is located in the first groove and extends to the side of the isolation insulating layer away from the substrate. The first electrode is in contact with the active layer.

[0020] Optionally, the TVS device also includes a passivation protection layer;

[0021] The passivation protection layer is located on the side of the first electrode away from the substrate, and the passivation protection layer is located on both sides of the first electrode;

[0022] The passivation protective layer located on the side of the first electrode away from the substrate has a second groove, which exposes the first electrode.

[0023] Optionally, the passivation protection layer includes a first passivation protection layer and a second passivation protection layer;

[0024] The first passivation protection layer is located on the side of the first electrode away from the substrate and on both sides of the first electrode; the second passivation protection layer is located on the side of the first passivation protection layer away from the substrate.

[0025] The second groove penetrates the first passivation protection layer and the second passivation protection layer located on the side of the first electrode away from the substrate.

[0026] Optionally, the substrate includes a first doped substrate, the epitaxial layer includes a second doped epitaxial layer, and the active layer includes a first doped active layer; wherein the first doping type is different from the second doping type.

[0027] Optionally, the first electrode comprises an aluminum-silicon-copper alloy electrode, and the second electrode comprises a titanium-nickel-silver-tin alloy electrode.

[0028] The technical solution of this embodiment of the invention forms the active layer through a two-step doping process. This results in a lower doping concentration in the active layer region closer to the epitaxial layer compared to the region farther from the epitaxial layer. The region of the active layer with the lower doping concentration has a higher resistivity, effectively improving the breakdown voltage of the TVS device. Meanwhile, the region of the active layer with the higher doping concentration is not annealed, further enhancing the breakdown voltage of the TVS device. Simultaneously, the region of the active layer in contact with the first electrode can form an ohmic contact with the first electrode. This technical solution of the invention, through an innovative doping process for TVS devices, effectively improves the breakdown voltage of TVS devices without altering the initial structure.

[0029] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of this utility model, nor is it intended to limit the scope of this utility model. Other features of this utility model will become readily apparent from the following description. Attached Figure Description

[0030] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0031] Figure 1 This is a schematic diagram of the structure of a TVS device provided in an embodiment of the present invention;

[0032] Figure 2 This is a schematic diagram of another TVS device provided in an embodiment of the present invention. Detailed Implementation

[0033] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the protection scope of the present invention.

[0034] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this utility model are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the utility model described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0035] Figure 1 This is a schematic diagram of the structure of a TVS device provided in an embodiment of this utility model, as shown below. Figure 1 As shown, the TVS device includes: a substrate 11, an epitaxial layer 12 located on one side of the substrate 11, an active layer 13 located on the side of the epitaxial layer 12 away from the substrate 11, wherein the doping concentration of the region of the active layer 13 closer to the epitaxial layer 12 is lower than the doping concentration of the region of the active layer 13 away from the epitaxial layer 12, a first electrode 14 located on the side of the active layer 13 away from the substrate 11, and a second electrode 15 located on the side of the substrate 11 away from the epitaxial layer 12.

[0036] Specifically, the TVS device provided in this embodiment is a bidirectional TVS device. The bidirectional TVS device may include a substrate 11 configured with a first doping type. The thickness of the substrate 11 may be 600µm-700µm, and the resistivity may be 0.002Ω·cm-0.005Ω·cm. An epitaxial layer 12 is located on one side of the substrate 11. The epitaxial layer 12 may be configured with a second doping type, and the resistivity of the epitaxial layer 12 may be 0.01Ω·cm-0.08Ω·cm. The first doping type and the second doping type are different. For example, the first doping type may include N-type doping or P-type doping, and the second doping type may also include N-type doping or P-type doping. When the first doping type is N-type doping, the second doping type is P-type doping; when the first doping type is P-type doping, the second doping type is N-type doping.

[0037] The active layer 13 is located on the side of the epitaxial layer 12 away from the substrate 11, and the active layer 13 can be configured with a first doping type. During the formation of the active layer 13, a layer with a thickness slightly greater than [missing information] can be first formed on the surface of the substrate 11. Figure 1The epitaxial layer 12, as shown, has a thickness equal to the sum of the thicknesses of the epitaxial layer 12 and the active layer 13. Then, the surface of the epitaxial layer 12 away from the substrate 11 is subjected to thermal oxidation. The thermal oxidation temperature can be 1000℃-1200℃, and the thermal oxidation time can be 5 hours, thereby forming a layer 12 with a thickness of [thickness value missing] on the side of the epitaxial layer 12 away from the substrate 11. The oxide layer. The thickness of this oxide layer, and Figure 1 The total thickness of the epitaxial layer 12 and the active layer 13 shown can be the total thickness of the epitaxial layer 12 initially formed on the substrate 11.

[0038] Then, dopant elements are implanted into a portion of the epitaxial layer 12 beneath the oxide layer using processes such as ion implantation or diffusion. This region corresponds to the formation of the active layer 13, specifically the region corresponding to the formation of the first active layer 131 and the second active layer 132. For example, the first doping type can be N-type doping, meaning phosphorus can be implanted into a portion of the epitaxial layer 12 beneath the oxide layer using processes such as ion implantation or diffusion, with an implantation energy of 60 KeV-1000 KeV. Annealing is then performed, typically for 1 hour in a nitrogen atmosphere at a temperature of 1000℃-1150℃. This step involves a low doping concentration in the portion of the epitaxial layer 12 beneath the oxide layer; for example, the doping concentration can be 1E9 atoms / cm³. 3 -3E11 atoms / cm 3 .

[0039] Further doping is carried out on a portion of the already doped epitaxial layer 12 located away from the substrate 11, i.e., on... Figure 1 The region corresponding to the formation of the second active layer 132 is further doped. For example, the first doping type can be N-type doping, meaning arsenic can be implanted into the region corresponding to the formation of the second active layer 132 through processes such as ion implantation or diffusion, with an implantation energy of 60 KeV-1000 KeV. The doping concentration for further doping the region corresponding to the formation of the second active layer 132 can be lower than the doping concentration for the initial doping of the regions corresponding to the formation of the first active layer 131 and the second active layer 132, but the doping concentration of the region corresponding to the second active layer 132 is greater than the doping concentration of the region corresponding to the first active layer 131. After ion implantation or diffusion into the region corresponding to the second active layer 132, annealing is not required, thus forming the active layer 13. Through the above steps, the doping concentration of the region of the active layer 13 near the epitaxial layer 12 can be made lower than the doping concentration of the region of the active layer 13 away from the epitaxial layer 12. Simultaneously, the oxide layer formed before the formation of the first active layer 13 can effectively control the depth and area of ​​doping, thereby ensuring high precision in the doping process.

[0040] The technical solution of this embodiment of the invention forms the active layer 13 through a two-step doping process. The doping concentration of the active layer 13 near the epitaxial layer 12 is lower than that of the active layer 13 away from the epitaxial layer 12. The region of the active layer 13 with the lower doping concentration has a higher resistivity, which can effectively improve the breakdown voltage of the TVS device. The region of the active layer 13 with the higher doping concentration is not annealed, which can further improve the breakdown voltage of the TVS device. Simultaneously, the region of the active layer 13 in contact with the first electrode 14 can form an ohmic contact with the first electrode 14. The technical solution of this embodiment of the invention, through an innovative doping process for TVS devices, can effectively improve the breakdown voltage of TVS devices without changing the initial structure.

[0041] In the prior art, the active region 13 is formed through a single doping process with a high doping concentration, resulting in a maximum breakdown voltage of 5.7V for the TVS device. However, the technical solution of this embodiment forms the active region 13 through a two-stage doping process. Under the same conditions, this method can increase the breakdown voltage of the TVS device by 10% compared to the single-stage doping method in the prior art. The TVS device provided by this embodiment can have a maximum breakdown voltage of 6.3V.

[0042] Optionally, based on the above embodiments, refer to... Figure 1 The active layer 13 includes a first active layer 131 and a second active layer 132. The first active layer 131 is located on the side of the epitaxial layer 12 away from the substrate 11, and the second active layer 132 is located on the side of the first active layer 131 away from the substrate 11. The doping concentration of the first active layer 131 is less than the doping concentration of the second active layer 132.

[0043] Specifically, the active layer 13 may include a first active layer 131 and a second active layer 132. The first active layer 131 is disposed on the surface of the epitaxial layer 12 away from the substrate 11, and the second active layer 132 is disposed on the surface of the first active layer 131 away from the substrate 11. The second active layer 132 may contact the first electrode 14, and the first active layer 131 and the second active layer 132 have the same doping type.

[0044] During the formation of the first active layer 131 and the second active layer 132, a layer with a thickness slightly greater than 132 can be formed on the surface of the substrate 11 first. Figure 1 The epitaxial layer 12 shown is formed by adding the thicknesses of the epitaxial layer 12 and the active layer 13. Then, a portion of the epitaxial layer 12 is doped with dopant elements using processes such as ion implantation or diffusion, followed by annealing. This region corresponds to the formation of the first active layer 131 and the second active layer 132. The doping concentration in this step for a portion of the epitaxial layer 12 is relatively low; for example, the doping concentration can be 1E9 atoms / cm³. 3-3E11 atoms / cm 3 .

[0045] Further doping is performed on a portion of the already doped epitaxial layer 12, and this further doping is applied to the region corresponding to the formation of the second active layer 132. Further doping is performed using processes such as ion implantation or diffusion. After ion implantation or diffusion into the region corresponding to the second active layer 132, annealing is not required, thereby forming the first active layer 131 and the second active layer 132, wherein the doping concentration of the first active layer 131 is less than the doping concentration of the second active layer 132.

[0046] The technical solution of this embodiment of the invention forms a first active layer 131 and a second active layer 132 through a two-step doping process. This results in a lower doping concentration in the first active layer 131 compared to the second active layer 132. The lower doping concentration of the first active layer 131 leads to a higher resistivity, effectively improving the breakdown voltage of the TVS device. Meanwhile, the region of the second active layer 132 with a higher doping concentration is not annealed, further enhancing the breakdown voltage of the TVS device. Simultaneously, the second active layer 132 in contact with the first electrode 14 can form an ohmic contact with the first electrode 14.

[0047] Optionally, based on the above embodiments, refer to... Figure 1 The first active layer 131 includes an active layer with a doping concentration less than or equal to the first doping concentration.

[0048] Specifically, the doping concentration of the first active layer 131 is relatively low. For example, the doping concentration of the first active layer 131 can be less than or equal to the first doping concentration, which can be 1E9 atoms / cm³. 3 -3E11 atoms / cm 3 The first active layer 131, with its lower doping concentration, has a higher resistivity, which can effectively improve the breakdown voltage of the TVS device.

[0049] Optionally, based on the above embodiments, refer to... Figure 1 The overall thickness of the epitaxial layer 12 and the active layer 13 is less than or equal to the first thickness value; the first thickness value is 6.5um-8.5um.

[0050] Specifically, the overall thickness of the epitaxial layer 12 and the active layer 13 can be set to 6.5µm-8.5µm. In this embodiment, the overall thickness of the epitaxial layer 12 and the active layer 13 is relatively low, meaning they are thinner overall, which effectively increases the maximum peak current (IPP) that the TVS device can withstand. By setting the epitaxial layer 12 and the active layer 13 to be thinner overall, the resistivity can be appropriately reduced, thereby increasing the maximum peak current (IPP) that the TVS device can withstand. Furthermore, the first active layer 131 and the second active layer 132 are formed through a two-step doping process, resulting in a lower doping concentration in the first active layer 131 than in the second active layer 132. The lower doping concentration of the first active layer 131 results in higher resistivity, which effectively improves the breakdown voltage of the TVS device. The region of the second active layer 132 with a higher doping concentration is not annealed, further improving the breakdown voltage of the TVS device. The TVS device provided in this embodiment of the invention can have both high IPP and high withstand voltage performance.

[0051] Optionally, based on the above embodiments, refer to... Figure 1 The TVS device also includes an isolation trench 20. The isolation trench 20 is located on both sides of the TVS device, penetrates the active layer 13 and the epitaxial layer 12, and extends into the substrate 11.

[0052] Specifically, multiple TVS devices and other electronic components can be fabricated on the same epitaxial wafer. Isolation trenches 20 can be provided on both sides of each TVS device. The isolation trenches 20 can penetrate the active layer 13 and the epitaxial layer 12 and extend into the substrate 11 to achieve effective isolation between the TVS device and adjacent electronic components.

[0053] During the formation of the isolation trench 20, a mask layer can first be formed on the side of the active layer 13 away from the substrate 11. For example, this mask layer can be formed by depositing a silicon oxide layer. At a temperature of 700°C-900°C, 2-6L of oxygen and 5-15L of tetraethoxysilane (TEOS) gas are introduced. The oxygen reacts with the tetraethoxysilane gas to generate silicon oxide, thereby forming a layer with a thickness of [missing information] on the side of the active layer 13 away from the substrate 11. The silicon dioxide mask layer.

[0054] Then, photolithography and etching are performed on the silicon oxide mask layer to remove the silicon oxide mask layer in the corresponding area of ​​the isolation trench 20. Then, using planar photolithography and other processes, the active layer 13, epitaxial layer 12 and part of the substrate 11 are etched with gases such as fluorine ions to form the isolation trench 20. The depth of the isolation trench 20 can be 8um-25um, and the width of the isolation trench 20 can be 0.8um-3um.

[0055] Optionally, based on the above embodiments, refer to... Figure 1 The TVS device also includes an isolation insulating layer 16. The isolation insulating layer 16 is located within the isolation trench 20 and extends to the side of the active layer 13 away from the substrate 11. The isolation insulating layer 16 located on the side of the active layer 13 away from the substrate 11 has a first groove 30, and a first electrode 14 is located in the first groove 30 and extends to the side of the isolation insulating layer 16 away from the substrate 11, and the first electrode 14 is in contact with the active layer 13.

[0056] Specifically, after forming the isolation trench 20, in order to better isolate adjacent electronic components of the TVS device, an isolation insulating layer 16 can be filled within the isolation trench 20. For example, the isolation insulating layer 16 may include a silicon dioxide insulating layer. The isolation insulating layer 16 can extend to the side of the active layer 13 away from the substrate 11, and the thickness of the isolation insulating layer 16 can be [missing information].

[0057] After forming the isolation insulating layer 16, it can be subjected to photolithography and etching processes. Hydrofluoric acid can be used to etch the isolation insulating layer 16 to form the first groove 30. While etching the isolation insulating layer 16 to form the first groove 30, the oxide layer formed by oxidizing the epitaxial layer 12 in the corresponding area of ​​the first groove 30 before forming the active layer 13 should be simultaneously exposed. Then, metal sputtering is performed in the corresponding area of ​​the first groove 30 to form the first electrode 14, which can have a thickness of 4µm-8µm. The first electrode 14 can be formed on the entire surface of the first groove 30 and on the side of the isolation insulating layer 16 away from the substrate 11. Then, the excess area of ​​the first electrode 14 is etched away using a mixture of phosphoric acid, acetic acid, and nitric acid.

[0058] Optionally, based on the above embodiments, refer to... Figure 1 The TVS device also includes a passivation protection layer 17. The passivation protection layer 17 is located on the side of the first electrode 14 away from the substrate 11, and the passivation protection layer 17 is located on both sides of the first electrode 14. The passivation protection layer 17 located on the side of the first electrode 14 away from the substrate 11 has a second groove 40, which exposes the first electrode.

[0059] Specifically, the TVS device may further include a passivation protection layer 17, which can be used to protect the first electrode 14. The passivation protection layer 17 may be located on the side of the first electrode 14 away from the substrate 11, and the passivation protection layer 17 may also be located on both sides of the first electrode 14, and the passivation protection layer 17 may surround the first electrode 14. At the same time, the passivation protection layer 17 located on the side of the first electrode 14 away from the substrate 11 may also be provided with a second groove 40, which exposes the first electrode.

[0060] Optionally, based on the above embodiments, Figure 2 This is a schematic diagram of another TVS device provided in an embodiment of the present invention, as shown below. Figure 2 As shown, the passivation protection layer 17 includes a first passivation protection layer 171 and a second passivation protection layer 172. The first passivation protection layer 171 is located on the side of the first electrode 14 away from the substrate 11 and is located on both sides of the first electrode 14. The second passivation protection layer 172 is located on the side of the first passivation protection layer 171 away from the substrate 11. The second groove 40 penetrates the first passivation protection layer 171 and the second passivation protection layer 172 located on the side of the first electrode 14 away from the substrate 11.

[0061] Specifically, the passivation protection layer 17 may include a first passivation protection layer 171 and a second passivation protection layer 172. For example, the first passivation protection layer 171 may protect the silicon dioxide passivation protection layer, and the second protection layer 172 may include the silicon nitride passivation protection layer.

[0062] For example, a thickness of [thickness value missing] can be formed first on the side of the first electrode 14 away from the substrate 11 and on both sides of the first electrode 14. A first passivation protective layer 171 is formed, and then a layer with a thickness of [thickness value missing] is formed on the side of the first passivation protective layer 171 away from the substrate 11. The second passivation protective layer 172 is then formed, followed by planar photolithography. The passivation protective layer 17 is etched using gases such as fluorine ions, retaining a total thickness of [missing information]. 17. Passivation protective layer.

[0063] The second groove 40 is formed by photolithography and etching processes. The second groove 40 penetrates the first passivation protection layer 171 and the second passivation protection layer 172 located on the side of the first electrode 14 away from the substrate 11, so as to expose part of the first electrode 14.

[0064] Optionally, based on the above embodiments, refer to... Figure 1 and Figure 2 The substrate 11 includes a first-doped substrate, the epitaxial layer 12 includes a second-doped epitaxial layer, and the active layer 13 includes a first-doped active layer. The first doping type and the second doping type are different.

[0065] Specifically, the TVS device may include a substrate 11 configured with a first doping type, an epitaxial layer 12 located on one side of the substrate 11, the epitaxial layer 12 being configured with a second doping type, and an active layer 13 located on the side of the epitaxial layer 12 away from the substrate 11, the active layer 13 being configured with the first doping type. The first doping type and the second doping type are different. For example, the first doping type may include N-type doping or P-type doping, and the second doping type may also include N-type doping or P-type doping. When the first doping type is N-type doping, the second doping type is P-type doping; when the first doping type is P-type doping, the second doping type is N-type doping.

[0066] Optionally, based on the above embodiments, refer to... Figure 1 and Figure 2 The first electrode 14 includes an aluminum-silicon-copper alloy electrode, and the second electrode 15 includes a titanium-nickel-silver-tin alloy electrode.

[0067] Specifically, the material of the first electrode 14 may include an aluminum-silicon-copper alloy, which can be subjected to alloy annealing treatment at a temperature of 400℃-530℃ for a time of 10min-30min. This alloy annealing treatment can further improve the quality of the ohmic contact between the first electrode 14 and the active layer 13.

[0068] The second electrode 15 may include a titanium-nickel-silver-tin alloy electrode. When forming the second electrode 15, the side of the substrate 11 away from the epitaxial layer 12 can be thinned first, to 100µm-200µm. Then, the second electrode 15 is deposited on the side of the substrate 11 away from the epitaxial layer 12. For example, a thickness of [missing information] can be deposited first on the side of the substrate 11 away from the epitaxial layer 12. Titanium metal, then deposited with a thickness of Metallic nickel, then a thickness of [missing information] is deposited. The metallic silver is then deposited, and finally a thickness of [missing information] is achieved. The metallic tin.

[0069] It should be understood that the various forms of the process shown above can be used, with steps reordered, added, or deleted. For example, the steps described in this utility model can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution of this utility model can be achieved, and this is not limited herein.

[0070] The specific embodiments described above do not constitute a limitation on the scope of protection of this utility model. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this utility model should be included within the scope of protection of this utility model.

Claims

1. A TVS device, characterized in that, include: Substrate; An epitaxial layer, wherein the epitaxial layer is located on one side of the substrate; An active layer, wherein the active layer is located on the side of the epitaxial layer away from the substrate; The doping concentration of the active layer near the epitaxial layer is less than the doping concentration of the active layer away from the epitaxial layer. A first electrode is located on the side of the active layer away from the substrate; The second electrode is located on the side of the substrate away from the epitaxial layer.

2. The TVS device according to claim 1, characterized in that, The active layer includes a first active layer and a second active layer; The first active layer is located on the side of the epitaxial layer away from the substrate, and the second active layer is located on the side of the first active layer away from the substrate; the doping concentration of the first active layer is less than the doping concentration of the second active layer.

3. The TVS device according to claim 2, characterized in that, The first active layer includes an active layer with a doping concentration less than or equal to a first doping concentration.

4. The TVS device according to claim 1, characterized in that, The overall thickness of the epitaxial layer and the active layer is less than or equal to a first thickness value; the first thickness value is 6.5um-8.5um.

5. The TVS device according to claim 1, characterized in that, Also includes: Isolation trench; The isolation trench is located on both sides of the TVS device, and the isolation trench penetrates the active layer and the epitaxial layer and extends into the substrate.

6. The TVS device according to claim 5, characterized in that, It also includes an insulating layer; The insulating layer is located within the isolation trench and extends to the side of the active layer away from the substrate; The isolation insulating layer located on the side of the active layer away from the substrate has a first groove, the first electrode is located in the first groove and extends to the side of the isolation insulating layer away from the substrate, and the first electrode is in contact with the active layer.

7. The TVS device according to claim 1, characterized in that, It also includes a passivation protective layer; The passivation protection layer is located on the side of the first electrode away from the substrate, and the passivation protection layer is located on both sides of the first electrode; The passivation protective layer located on the side of the first electrode away from the substrate has a second groove, which exposes the first electrode.

8. The TVS device according to claim 7, characterized in that, The passivation protection layer includes a first passivation protection layer and a second passivation protection layer; The first passivation protection layer is located on the side of the first electrode away from the substrate, and is located on both sides of the first electrode; the second passivation protection layer is located on the side of the first passivation protection layer away from the substrate; The second groove penetrates the first passivation protection layer and the second passivation protection layer located on the side of the first electrode away from the substrate.

9. The TVS device according to claim 1, characterized in that, The substrate includes a first doped substrate, the epitaxial layer includes a second doped epitaxial layer, and the active layer includes a first doped active layer; wherein the first doping type is different from the second doping type.

10. The TVS device according to claim 1, characterized in that, The first electrode comprises an aluminum-silicon-copper alloy electrode, and the second electrode comprises a titanium-nickel-silver-tin alloy electrode.

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