Infrared window structure and infrared detector

Abstract

The utility model discloses an infrared window structure and infrared detector apply to infrared detector field, this infrared window structure includes as the first surface of the bonding surface of infrared window structure, and the second surface of the back to the bonding surface, the second surface is provided with first antireflection region and first non antireflection region, the first antireflection region department is provided with antireflection structure, and the first non antireflection region department forms the protection structure higher than antireflection structure, the utility model discloses a second surface of infrared window structure is divided to first antireflection region and first non antireflection region, and sets up antireflection structure at first antireflection region, sets up protection structure at first non antireflection region, and the protection structure is higher than antireflection structure, can utilize the protection structure and limit the external work piece, avoids the external work piece and contacts the antireflection structure when subsequent processing or using, forms the protection to the antireflection film.

Description

Technical Field

[0001] This utility model relates to the field of infrared detectors, and in particular to an infrared window structure and an infrared detector. Background Technology

[0002] In the current semiconductor industry, uncooled infrared detectors are developing towards miniaturization, high performance, and low cost. The structure of the infrared window is a crucial factor limiting its development. Existing infrared detectors typically use wafer-level packaging (WLP) to fabricate the window structure, resulting in advantages such as miniaturization, high performance, and low cost. Current WLP processes require the placement of antireflection structures on the window wafer surface. These structures can be created by depositing antireflection films or etching antireflection microstructure arrays. The latter method, in particular, achieves high yield, high infrared transmittance, and pre-cutoff functionality within a specific wavelength range, while also improving the performance of other film layers. However, the antireflection areas are highly susceptible to scratches and damage during manufacturing, especially the antireflection microstructure arrays, which are easily destroyed by external forces, thus affecting product yield. Utility Model Content

[0003] In view of this, the purpose of this utility model is to provide an infrared window structure and an infrared detector, which solves the problem that the anti-reflection area set in the prior art is easily scratched and damaged during the production process, especially the fabricated anti-reflection microstructure array is easily destroyed under external force, thus affecting the product yield.

[0004] To solve the above technical problems, this utility model provides an infrared window structure, comprising:

[0005] The first surface serves as the bonding surface of the infrared window structure, and the second surface faces away from the bonding surface;

[0006] The second surface is provided with a first anti-reflective area and a first non-anti-reflective area;

[0007] An anti-reflection structure is provided in the first anti-reflection area, and a protective structure higher than the anti-reflection structure is formed in the first non-anti-reflection area.

[0008] Optionally, the second surface is formed with a first stepped structure;

[0009] The first step structure includes a first bottom platform, a first side wall, and a first top platform, with the first anti-reflective area located at the first bottom platform and the first non-anti-reflective area located at the first top platform.

[0010] Optionally, the height of the first top platform is higher than the height of the anti-reflective structure;

[0011] At the second surface, the portion of the infrared window structure that is higher than the first bottom platform serves as the protective structure.

[0012] Optionally, at the second surface, the protective structure is an additional structure provided at the first non-anti-reflective region.

[0013] Optionally, the protective structure is a single-layer inorganic protective film, a single-layer metal protective film, or a single-layer metal compound protective film.

[0014] Optionally, the antireflection structure is an array of antireflection microstructures.

[0015] Optionally, the antireflection structure is an antireflection coating.

[0016] Optionally, the first surface of the infrared window structure is provided with a second anti-reflection area and a second non-anti-reflection area;

[0017] An anti-reflection structure is provided in the second anti-reflection area, and bonding solder is provided in the second non-anti-reflection area.

[0018] Optionally, the second surface is formed with a second stepped structure;

[0019] The second step structure includes a second bottom platform, a second side wall, and a second top platform, with the second anti-reflective area located at the second bottom platform and the second non-anti-reflective area located at the second top platform.

[0020] Optionally, a getter may also be provided in the second non-reflective region.

[0021] This invention also provides an infrared detector, including the infrared window structure described above.

[0022] As can be seen, the infrared window structure provided by this utility model includes a first surface serving as the bonding surface of the infrared window structure and a second surface facing away from the bonding surface; the second surface is provided with a first anti-reflection region and a first non-anti-reflection region; an anti-reflection structure is provided in the first anti-reflection region, and a protective structure higher than the anti-reflection structure is formed in the first non-anti-reflection region. This utility model, by dividing the second surface of the infrared window structure into a first anti-reflection region and a first non-anti-reflection region, and providing an anti-reflection structure in the first anti-reflection region and a protective structure in the first non-anti-reflection region, with the protective structure being higher than the anti-reflection structure, can limit the movement of external workpieces, preventing them from contacting the anti-reflection structure during subsequent processing or use, thus protecting the anti-reflection film.

[0023] In addition, this utility model also provides an infrared detector, which has the same beneficial effects as described above. Attached Figure Description

[0024] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0025] Figure 1 A schematic diagram of an infrared window structure provided in an embodiment of this utility model;

[0026] Figure 2 A schematic diagram of another infrared window structure provided in this embodiment of the present utility model;

[0027] Figure 3 A schematic diagram of another infrared window structure provided in this embodiment of the present utility model;

[0028] Figure 4 A schematic diagram of another infrared window structure provided in this embodiment of the utility model;

[0029] Figure 5 An example diagram illustrating the fabrication of an infrared window structure provided in this embodiment of the present invention;

[0030] Figure 6 An example diagram illustrating the fabrication of another infrared window structure provided in this embodiment of the present invention;

[0031] Figure 7 An example diagram illustrating the fabrication of another infrared window structure provided in this embodiment of the present invention;

[0032] Figure 8 An example diagram illustrating the fabrication of another infrared window structure provided in this embodiment of the present invention;

[0033] The annotations in the attached figures are explained as follows:

[0034] 1-First surface, 2-Second surface, 3-Infrared window structure, 10-First antireflection region, 20-First non-antireflection region, 31-Antireflection microstructure array, 32-Antireflection antireflection film, 40-Protective structure, 41-Full-area protective structure, 42-Residual protective structure, 50-Second antireflection region, 60-Second non-antireflection region, 70-Bonding solder, 80-Getter, 91-First bottom mesa, 92-First sidewall, 93-First top mesa, 94-Second bottom mesa, 95-Second sidewall, 96-Second top mesa. Detailed Implementation

[0035] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.

[0036] Please refer to Figure 1 , Figure 1 This is a schematic diagram of an infrared window structure provided in an embodiment of the present invention. The infrared window structure may include:

[0037] The first surface 1 serves as the bonding surface of the infrared window structure 3, and the second surface 2 faces away from the bonding surface;

[0038] The second surface 2 is provided with a first anti-reflection region 10 and a first non-anti-reflection region 20;

[0039] The first anti-reflective zone 10 locations are equipped with anti-reflective structures, and the first non-anti-reflective zone 20 locations are equipped with protective structures 40 that are higher than the anti-reflective structures.

[0040] It should be noted that in this embodiment, the infrared window structure 3 is generally a structure fabricated through wafer processing. One side of the infrared window structure 3 faces the internal semiconductor device structure of the infrared detector and is connected to the internal semiconductor device structure by bonding, serving as the bonding surface of the infrared window structure 3, i.e., the first surface 1 defined above. The side of the infrared window structure 3 facing away from the bonding surface is defined as the second surface 2, which is located towards the outside of the infrared detector. To ensure that external light enters the interior of the infrared detector through the infrared window structure 3 and reduce incident light loss, an anti-reflection region is generally defined on the second surface 2 of the infrared window structure 3, i.e., the first anti-reflection region 10 mentioned above. The first anti-reflection region 10 can generally be located at the center of a meta-region in the infrared window structure 3, while the first non-anti-reflection region 20 located on the second surface 2 surrounds the outside of the first anti-reflection region 10. The difference between the first antireflection region 10 and the first non-antireflection region 20 is that the first antireflection region 10 has an antireflection structure, while the first non-antireflection region 20 does not have an antireflection structure but has a protective structure 40. This protective structure 40 is higher than the antireflection structure. It should be further explained that in this embodiment, the protective structure 40 being higher than the antireflection structure means that the height by which the protective structure 40 protrudes from the second surface 2 is greater than the height by which the antireflection structure protrudes from the second surface 2. This is to limit the movement of external workpieces and prevent them from contacting and damaging the antireflection structure. In this embodiment, the infrared window structure 3 can be fabricated using a double-polished silicon substrate. In this embodiment, the protective structure 40 can be fabricated using a patterning process, specifically by first growing a film and then photolithography etching, or by first photolithography, then growing a film, and then removing it using a lift-off process.

[0041] Furthermore, to ensure the ease of preparation of the protective structure 40, reference can be made to... Figure 2 , Figure 2 This is a schematic diagram of another infrared window structure provided in an embodiment of the present invention. The second surface 2 may be provided with a first step structure.

[0042] The first step structure includes a first bottom platform 91, a first side wall 92 and a first top platform 93, and the first anti-reflective area 10 is located at the first bottom platform 91, and the first non-anti-reflective area 20 is located at the first top platform 93.

[0043] It should be noted that in this embodiment, the second surface 2 of the infrared window structure 3 has a first stepped structure, which includes a first bottom platform 91, a first sidewall 92, and a first top platform 93. The first bottom platform 91 and the first top platform 93 are connected by the first sidewall 92. The first anti-reflective region 10 is located on the first bottom platform 91, and the first non-anti-reflective region 20 is located on the first top platform 93. In this embodiment, it is only necessary to ensure that the height of the prepared protective structure 40 is higher than the height of the anti-reflective structure, and the specific relationship between the height of the anti-reflective structure and the height of the first top platform 93 is not limited. In this embodiment, the anti-reflective structure is prepared on the first bottom platform 91, which can improve the convenience of preparation and ensure the accuracy of the preparation position of the anti-reflective structure.

[0044] Furthermore, in order to avoid damaging the anti-reflection structure when the anti-reflection structure is set in the anti-reflection area and then the protective structure 40 is prepared in the first non-anti-reflection area 20, and to reduce the cost of preparing the protective structure 40, the height of the first top platform 93 can be set higher than the height of the anti-reflection structure.

[0045] At the second surface 2, the portion of the infrared window structure 3 that is higher than the first bottom platform 91 serves as a protective structure 40.

[0046] It should be noted that in this embodiment, by setting the height of the first top platform 93 to be higher than the height of the anti-reflection structure, and using the portion of the infrared window structure 3 that is higher than the first bottom platform 91 as the protective structure 40, it is possible to avoid setting an additional protective structure 40, improve the stability of the protective structure 40, and reduce the manufacturing cost of the protective structure 40.

[0047] Furthermore, in another feasible embodiment, reference can be made to Figure 3 , Figure 3 This is a schematic diagram of another infrared window structure provided in an embodiment of the present invention. It can be disposed on the second surface 2, and the protective structure 40 is an additional structure disposed on the first non-anti-reflective region 20.

[0048] In this embodiment, the protective structure 40 is an additional structure set at the first non-anti-reflection region 20, which eliminates the need to process and prepare a stepped structure at the second surface 2 of the infrared window structure 3, further improving the ease of preparation of the infrared window structure 3.

[0049] Furthermore, in order to ensure the functionality of the protective structure 40, the protective structure 40 can be configured as a single-layer inorganic protective film, a single-layer metal protective film, or a single-layer metal compound protective film.

[0050] In this embodiment, the protective structure 40 is configured as a single-layer inorganic protective film, a single-layer metal protective film, or a single-layer metal compound protective film. This reduces the complexity of fabricating the protective structure 40 while ensuring its functionality. Specifically, the single-layer inorganic protective film can be a single-layer silicon nitride protective film, a single-layer silicon oxide protective film, a single-layer silicon oxynitride protective film, a single-layer amorphous silicon protective film, or a single-layer polycrystalline silicon protective film. The single-layer metal protective film can be a single-layer aluminum protective film, a single-layer titanium protective film, a single-layer copper protective film, a single-layer tungsten protective film, a single-layer chromium protective film, or a single-layer nickel protective film. The single-layer metal compound protective film can be a single-layer metal nitride protective film, such as a single-layer titanium nitride protective film or a single-layer tantalum nitride protective film.

[0051] Furthermore, in a feasible embodiment, in order to ensure the functionality of the antireflection structure, the above-mentioned antireflection structure can be set as an antireflection microstructure array 31.

[0052] It should be noted that the antireflection microstructure array 31 in this embodiment can refer to existing structures and can be configured as a periodically arranged array of microstructures such as pillars or cones prepared on the processing surface, which can achieve the antireflection effect. In this embodiment, setting the antireflection structure as the antireflection microstructure array 31 can improve the yield of the infrared window structure 3, the infrared transmittance, and has a front cutoff function in a specific wavelength range. At the same time, it can improve the processing range between the infrared window structure 3 and other film layers.

[0053] Furthermore, in another feasible embodiment, in order to ensure the ease of preparation of the antireflection structure, the above-mentioned antireflection structure can be set as an antireflection coating 32.

[0054] In this embodiment, the antireflection structure is set as an antireflection coating 32, which can improve the transmittance of the infrared window structure 3 to the infrared band while improving the ease of fabrication of the antireflection structure.

[0055] Furthermore, to improve the infrared transmittance of the infrared window structure 3 in the infrared band, reference can be made to... Figure 4 , Figure 4 This is a schematic diagram of another infrared window structure provided in an embodiment of the present invention. The first surface 1 of the infrared window structure 3 may be provided with a second anti-reflection region 50 and a second non-anti-reflection region 60.

[0056] An anti-reflection structure is provided at the second anti-reflection area 50, and bonding solder 70 is provided at the second non-anti-reflection area 60.

[0057] It should be noted that the bonding solder 70 provided in the second non-antireflection region 60 in this embodiment is used for bonding with the semiconductor device structure. This embodiment is not limited to the specific structure of the antireflection structure provided in the second antireflection region 50. An antireflection microstructure array 31, an antireflection antireflection film 32, or other structures that can improve infrared transmittance can be provided in the second antireflection region 50. Furthermore, in this embodiment, a getter 80 can also be provided in the second non-antireflection region 60 to ensure that a vacuum region is formed after the infrared window structure 3 is bonded to the semiconductor device structure inside the infrared detector. The getter 80 can be selected from materials such as titanium, zirconium, vanadium, chromium, cobalt, iron, manganese, palladium, barium, aluminum, or an alloy of several of these metals. Alternatively, it can be an organic material, such as photoresist, spin-coated carbon (SOC), polyimide (PI), polymethyl methacrylate (PMMA), benzocyclobutene (BCB), amorphous carbon, etc., or it can be a multilayer composite film obtained by any combination of the above materials. In this embodiment, the bonding solder 70 can be a copper-nickel-tin-silver alloy stacked structure, a copper-nickel-tin stacked structure, or a copper-tin-silver alloy stacked structure. The copper-tin-silver alloy stacked structure can be prepared by physical vapor deposition or by electroplating.

[0058] Furthermore, in order to ensure the ease of fabrication of the protective structure 40 at the first surface 1, the second surface 2 can be provided with a second step structure;

[0059] The second step structure includes a second bottom platform 94, a second side wall 95, and a second top platform 96, with the second anti-reflective area 50 located at the second bottom platform 94 and the second non-anti-reflective area 60 located at the second top platform 96.

[0060] It should be noted that in this embodiment, the second stepped structure is fabricated on the first surface 1 of the infrared window structure 3, which improves the ease of fabrication. Only the anti-reflection structure needs to be set in the second anti-reflection region 50 of the second bottom platform 94, and the bonding solder 70 needs to be set in the second non-anti-reflection region 60 of the second top platform 96. The second bottom platform 94 and the second top platform 96 are connected by the second sidewall 95. It should be further noted that in this embodiment, the second top platform 96 is higher than the second bottom platform 94 along a direction perpendicular to the first surface 1 and away from the infrared window structure 3.

[0061] In summary, the infrared window structure 3 in this embodiment can be prepared in the following ways:

[0062] Method 1: The preparation process for Method 1 can be referred to Figure 5 , Figure 5This diagram illustrates an example of fabrication of an infrared window structure according to an embodiment of the present invention. Specifically, it may include: providing a silicon substrate, and etching an anti-reflection microstructure array 31 as described above on one side surface of the silicon substrate, as shown in the diagram. Figure 5 As shown in (a), a protective structure 40, as described above, is then fabricated around the outer side of the antireflection microstructure array 31 on the same side surface of the silicon substrate, specifically as follows: Figure 5 As shown in (b), the protective structure 40 protrudes above the antireflection microstructure array 31, and the antireflection microstructure array 31 is then fabricated on the opposite side of the silicon substrate, as detailed below. Figure 5 As shown in (c), the bonding solder 70 and getter 80 are then electroplated as described above, specifically as follows: Figure 5 As shown in (d). The specific order of the above preparation steps is not required and can be arbitrarily changed as long as the process effect is guaranteed.

[0063] Method 2: The preparation process for Method 2 can be referred to Figure 6 , Figure 6 This diagram illustrates another example of the fabrication of an infrared window structure provided in this embodiment of the invention. Specifically, it may include: providing a silicon substrate, and etching one side surface of the silicon substrate to form a first step structure as described above, specifically as follows... Figure 6 As shown in (a), an anti-reflection microstructure array 31 as described above is fabricated by etching the bottom mesa of the first stepped structure. The height of the first top mesa 93 is greater than the height of the anti-reflection microstructure array 31, specifically as shown in (a). Figure 6 As shown in (b), an anti-reflection microstructure array 31 is then etched on the opposite side surface of the silicon substrate, specifically as follows: Figure 6 As shown in (c), the bonding solder 70 and getter 80 are then electroplated as described above, specifically as follows: Figure 6 As shown in (d). The specific order of the above preparation steps is not required and can be arbitrarily changed as long as the process effect is guaranteed.

[0064] Method 3: The preparation process for Method 3 can be referred to Figure 7 , Figure 7 This diagram illustrates another example of the fabrication of an infrared window structure provided in this embodiment of the invention. Specifically, it may include: providing a silicon substrate, and fabricating the protective structure 40 as described above on the entire surface of one side of the silicon substrate, i.e., fabricating a full-surface protective structure 41 on one side of the silicon substrate, as shown below. Figure 7 As shown in (a), the antireflection microstructure array 31 described above is prepared by further etching. At this time, the entire protective structure 41 is also etched, resulting in a residual protective structure 42, as shown in the figure. Figure 7 As shown in (b), the residual protective structure 42 directly above the antireflection microstructure array 31 is then removed. The remaining residual protective structure 42 constitutes the protective structure 40 as described above, specifically as follows:Figure 7 As shown in (c), a second step structure as described above is etched on the opposite surface of the silicon substrate, specifically as follows: Figure 7 As shown in (d), an antireflective coating 32 as described above is prepared on the bottom platform of the second-step structure, and a bonding solder 70 and a getter 80 as described above are prepared by electroplating, specifically as follows. Figure 7 As shown in (e). The specific order of the above preparation steps is not required and can be arbitrarily changed as long as the process effect is guaranteed.

[0065] Method 4: The preparation process for Method 4 can be found by referring to... Figure 8 , Figure 8 This diagram illustrates another example of the fabrication of an infrared window structure provided in this embodiment of the invention. Specifically, it may include: providing a silicon substrate, and etching one side surface of the silicon substrate to form a first step structure as described above, specifically as follows... Figure 8 As shown in (a), an anti-reflection microstructure array 31 as described above is fabricated by etching the bottom mesa of the first stepped structure. The height of the first top mesa 93 is greater than the height of the anti-reflection microstructure array 31, specifically as shown in (a). Figure 8 As shown in (b), a second step structure as described above is etched on the opposite surface of the silicon substrate, specifically as follows: Figure 8 As shown in (c), an antireflective coating 32 as described above is prepared on the bottom platform of the second step structure, and a bonding solder 70 and a getter 80 as described above are prepared by electroplating, specifically as follows. Figure 8 As shown in (d). The specific order of the above preparation steps is not required and can be arbitrarily changed as long as the process effect is guaranteed.

[0066] The infrared window structure provided in this embodiment includes a first surface 1 serving as the bonding surface of the infrared window structure 3, and a second surface 2 facing away from the bonding surface. The second surface 2 is provided with a first anti-reflection region 10 and a first non-anti-reflection region 20. An anti-reflection structure is provided at the first anti-reflection region 10, and a protective structure 40 higher than the anti-reflection structure is formed at the first non-anti-reflection region 20. By dividing the second surface 2 of the infrared window structure 3 into the first anti-reflection region 10 and the first non-anti-reflection region 20, and by providing an anti-reflection structure at the first anti-reflection region 10 and a protective structure 40 at the first non-anti-reflection region 20, and by providing the protective structure 40 higher than the anti-reflection structure, this invention can limit the movement of external workpieces, preventing them from contacting the anti-reflection structure during subsequent processing or use, thus protecting the anti-reflection film.

[0067] Furthermore, in this embodiment of the invention, a first stepped structure is formed on the second surface 2, and this first stepped structure includes a first bottom platform 91, a first sidewall 92, and a first top platform 93. By preparing an anti-reflection structure at the first bottom platform 91, the ease of preparation can be improved, while ensuring the accuracy of the position of the anti-reflection structure. By setting the height of the first top platform 93 to be higher than the height of the anti-reflection structure, and using the portion of the infrared window structure 3 above the first bottom platform 91 as a protective structure 40, the need for additional protective structure 40 can be avoided, improving the stability of the protective structure 40 and reducing the preparation cost of the protective structure 40. By setting the protective structure 40 as an additional structure set at the first non-anti-reflection area 20, it is not necessary to process and prepare a stepped structure on the second surface 2 of the infrared window structure 3, further improving the ease of preparation of the infrared window structure 3. By setting the protective structure 40 as a single-layer inorganic protective film, a single-layer metal protective film, or a single-layer... The metal compound protective film can reduce the complexity of the protective structure 40 fabrication while ensuring its functionality. By setting the antireflection structure as an anti-reflection microstructure array 31, the yield and infrared transmittance of the infrared window structure 3 can be improved, and it has a pre-cutoff function within a specific wavelength range. At the same time, it can improve the process range between the infrared window structure 3 and other film layers. By setting the antireflection structure as an anti-reflection antireflection film 32, the transmittance of the infrared window structure 3 to the infrared band can be improved, while the ease of fabrication of the antireflection structure can be improved. By setting a second antireflection region 50 and a second non-antireflection region 60 on the first surface 1 of the infrared window structure 3, with an antireflection structure in the second antireflection region 50 and bonding solder 70 in the second non-antireflection region 60, the infrared transmittance of the infrared window structure 3 can be improved. By fabricating a second step structure on the first surface 1 of the infrared window structure 3, the ease of fabrication can be improved.

[0068] The infrared detector provided in the embodiments of this utility model is described below. The infrared detector described below can be referred to in correspondence with the infrared window structure described above.

[0069] The infrared detector provided in this embodiment of the present invention may include the infrared window structure described above.

[0070] In this embodiment, the infrared detector's structure, except for the infrared window structure, can refer to existing infrared detectors.

[0071] The infrared detector provided by this invention includes an infrared window structure. This infrared window structure includes a first surface serving as the bonding surface of the infrared window structure and a second surface facing away from the bonding surface. The second surface is provided with a first anti-reflection region and a first non-anti-reflection region. An anti-reflection structure is provided in the first anti-reflection region, and a protective structure higher than the anti-reflection structure is formed in the first non-anti-reflection region. This invention, by dividing the second surface of the infrared window structure into a first anti-reflection region and a first non-anti-reflection region, and providing an anti-reflection structure in the first anti-reflection region and a protective structure in the first non-anti-reflection region, with the protective structure higher than the anti-reflection structure, can limit the movement of external workpieces, preventing them from contacting the anti-reflection structure during subsequent processing or use, thus protecting the anti-reflection film.

[0072] The various embodiments in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0073] Furthermore, it should be noted that in this document, relationships such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprising," "including," or any other variations are intended to cover non-exclusive inclusion.

[0074] The infrared window structure and infrared detector provided by this utility model have been described in detail above. Specific examples have been used to illustrate the principle and implementation of this utility model. The description of the above embodiments is only for the purpose of helping to understand the structure and core idea of ​​this utility model. At the same time, for those skilled in the art, there will be changes in the specific implementation and application scope based on the idea of ​​this utility model. Therefore, the content of this specification should not be construed as a limitation of this utility model.

Claims

1. An infrared window structure, characterized in that, include: The first surface (1) of the bonding surface of the infrared window structure (3) and the second surface (2) facing away from the bonding surface. The second surface (2) is provided with a first anti-reflection region (10) and a first non-anti-reflection region (20); An anti-reflective structure is provided at the first anti-reflective region (10), and a protective structure (40) higher than the anti-reflective structure is formed at the first non-anti-reflective region (20).

2. The infrared window structure according to claim 1, characterized in that, The second surface (2) has a first step structure; The first step structure includes a first bottom platform (91), a first side wall (92) and a first top platform (93), and the first anti-reflective area (10) is located at the first bottom platform (91), and the first non-anti-reflective area (20) is located at the first top platform (93).

3. The infrared window structure according to claim 2, characterized in that, The height of the first top platform (93) is higher than the height of the anti-reflective structure; At the second surface (2), the portion of the infrared window structure (3) above the first bottom platform (91) serves as the protective structure (40).

4. The infrared window structure according to claim 1, characterized in that, At the second surface (2), the protective structure (40) is an additional structure provided at the first non-anti-reflective region (20).

5. The infrared window structure according to claim 4, characterized in that, The protective structure (40) is a single-layer inorganic protective film, a single-layer metal protective film, or a single-layer metal compound protective film.

6. The infrared window structure according to claim 1, characterized in that, The antireflection structure is an antireflection microstructure array (31).

7. The infrared window structure according to claim 1, characterized in that, The antireflection structure is an antireflection coating (32).

8. The infrared window structure according to any one of claims 1 to 7, characterized in that, The first surface (1) of the infrared window structure (3) is provided with a second anti-reflection area (50) and a second non-anti-reflection area (60). An anti-reflection structure is provided in the second anti-reflection area (50), and a bonding solder (70) is provided in the second non-anti-reflection area (60).

9. The infrared window structure according to claim 8, characterized in that, The second surface (2) has a second step structure; The second step structure includes a second bottom platform (94), a second side wall (95), and a second top platform (96), wherein the second anti-reflective area (50) is located at the second bottom platform (94), and the second non-anti-reflective area (60) is located at the second top platform (96).

10. An infrared detector, characterized in that, Including the infrared window structure as described in any one of claims 1 to 9.

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