Thin film battery, photovoltaic module and powered device

Abstract

The application relates to the technical field of solar cells, in particular to a thin-film cell, a photovoltaic module and an electric device. The thin-film cell of the application comprises a back electrode, a photoactive functional stack and a top electrode which are stacked in sequence; a plurality of first scribe lines are arranged on the back electrode; a plurality of second scribe lines are arranged on the photoactive functional stack; a plurality of third scribe lines are arranged on the top electrode and the photoactive functional stack; wherein the first scribe lines and the third scribe lines independently comprise a pattern part and a line segment part, and the pattern part and the line segment part are connected; the orthogonal projection of the pattern part of the first scribe lines and the third scribe lines on the back electrode plane forms a closed geometric figure, the orthogonal projection of the line segment part of the first scribe lines and the third scribe lines on the back electrode plane at least partially overlaps, and the orthogonal projection of the second scribe lines on the back electrode plane is located in the closed geometric figure. The thin-film cell of the application can reduce the proportion of invalid areas generated by laser scribing, and further improve the performance of the cell.

Description

Technical Field

[0001] This application relates to the field of solar cell technology, and more particularly to a thin-film battery, photovoltaic module, and electrical device. Background Technology

[0002] Perovskite solar cells, as a representative of third-generation photovoltaic technology, have made breakthroughs in photoelectric conversion efficiency and industrialization in recent years due to their significant advantages in materials and manufacturing costs (material purity requirements are only 1 / 10 of crystalline silicon, manufacturing energy consumption is low, and production can be carried out at temperatures below 150°C) and solution-processable characteristics. These characteristics make them particularly suitable for low-cost, high-throughput production processes such as roll-to-roll printing.

[0003] Perovskite solar cells have shown tremendous potential in terms of efficiency: single-junction cells have achieved a laboratory efficiency of 26.7%, all-perovskite tandem cells have exceeded 31.55%, and crystalline silicon / perovskite tandem cells have reached 33.9%, continuously approaching and even surpassing the theoretical limits of traditional technologies. In terms of application scenarios, perovskite technology is forming a dual-drive pattern of "centralized + distributed," specifically: in the field of ground-mounted power plants, its high theoretical efficiency can effectively reduce the cost per kilowatt-hour; in the field of building-integrated photovoltaics (BIPV), semi-transparent modules provide innovative solutions for building energy-saving retrofits; in the field of mobile energy, flexible modules (such as those already used on logistics vehicle roofs with a conversion efficiency of 22%) have expanded application boundaries. Currently, the industry chain has initially formed a closed loop of "equipment-materials-cells-applications." However, achieving large-scale industrialization still faces challenges, due to efficiency losses in large-area modules, such as those with a 20cm diameter. 2 The efficiency of the above components is generally 3% to 5% lower than that of small-area cells in the laboratory. The core reason is that the laser scribing process (P1, P2, P3) required for the manufacturing of large-area components will generate ineffective areas ("dead zones"), resulting in a decrease in the geometric fill factor (i.e., a reduction in the proportion of the "active area" that actually generates electricity).

[0004] It should be noted that the above content is not necessarily prior art, nor is it intended to limit the scope of patent protection of this application. Utility Model Content

[0005] This application provides a thin-film battery, a photovoltaic module, and an electrical device to solve or alleviate one or more of the technical problems mentioned above.

[0006] The first aspect of this application provides a thin-film battery, including a back electrode, a photoactive functional stack, and a top electrode stacked sequentially. The back electrode is provided with several first etched lines; The photoactive functional stack is provided with several second scribe lines; The top electrode and the photoactive functional stack are provided with several third scribe lines; The first etched line and the third etched line each independently include a pattern portion and a line segment portion, and the pattern portion and the line segment portion are connected. The orthographic projections of the pattern portions of the first and third etched lines onto the back electrode plane form a closed geometric shape. The orthographic projections of the line segments of the first and third etched lines onto the back electrode plane at least partially overlap. The orthographic projection of the second etched line onto the back electrode plane is located within the closed geometric shape.

[0007] The thin-film battery of this application forms a conductive path in a closed geometry. The design of partial overlap between the first and third etched lines can reduce the proportion of ineffective areas (dead zones) generated by laser etching, thereby improving the performance of the battery.

[0008] According to an embodiment of this application, in the thin-film battery, the closed geometry is a periodically distributed pattern in a first direction; In the direction of the line segment of the first etched line, the ratio of the length of the closed geometry to the distance between adjacent closed geometries is 1:(1 to 10). This reduces the dead zone area without affecting the carrier transport velocity.

[0009] According to an embodiment of this application, in this thin-film battery, the distance between adjacent closed geometric shapes in the first direction is 100 μm to 1000 μm. This facilitates processing and molding.

[0010] According to an embodiment of this application, in this thin-film battery, the area of ​​the closed geometry is 0.5 mm². 2 Therefore, it is possible to take into account the existing line drawing parameters.

[0011] According to an embodiment of this application, in the thin-film battery, the ratio of the area of ​​the second scribe line to the area of ​​the closed geometry is 1:(1-5). Therefore, while ensuring carrier transport capability, the conductive material within the second scribe line trench can be reduced to lower the overall device series resistance.

[0012] According to an embodiment of this application, in the thin-film battery, the second scribe line is filled with a conductive material; the conductive material includes at least one selected from indium tin oxide, indium zinc oxide, indium tungsten oxide, fluorine-doped tin oxide, indium cerium oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, Cu, Ag, Au, Al, carbon electrode, carbon nanotube, and Ag-Al alloy. This allows for series connection between sub-cells while maintaining an effective conductive channel area, which is beneficial for further reducing the dead zone area.

[0013] According to an embodiment of this application, in the thin-film battery, the line width of the first scribe line is 20 μm to 100 μm; and / or the line width of the second scribe line is 20 μm to 100 μm; and / or the line width of the third scribe line is 30 μm to 100 μm. This adapts to existing scribing parameters.

[0014] According to an embodiment of this application, in this thin-film battery, the closed geometry is an axisymmetric geometry. This facilitates processing.

[0015] According to embodiments of this application, in this thin-film battery, the closed geometry includes at least one of a rectangle, circle, ellipse, regular polygon, isosceles triangle, equilateral triangle, rhombus, and isosceles trapezoid. This significantly improves the dead zone area.

[0016] A second aspect of this application provides a photovoltaic module, which includes the thin-film battery described in the first aspect of the embodiment or the thin-film battery prepared by the preparation method described in the second aspect of the embodiment. Therefore, since the proportion of the dead zone area is controlled, the conversion efficiency of the related battery and module is improved.

[0017] The third aspect of this application provides an electrical device, which includes the photovoltaic module described in the second aspect of the application. Attached Figure Description

[0018] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the various drawings denote the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings depict only some embodiments disclosed in this application and should not be construed as limiting the scope of this application.

[0019] Figure 1 This is a schematic diagram (cross-sectional view) of the structure of the thin-film battery provided in the embodiments of this application. Figure 2 This is a schematic diagram (top view) of the structure of the thin-film battery provided in the embodiments of this application. Figure 3 This is a schematic diagram of the structure after the first scratch provided in the embodiment of this application; Figure 4 This is a schematic diagram of the structure after the second marking provided in the embodiments of this application; Figure 5 This is a schematic diagram of the structure after the third marking provided in the embodiments of this application; Figure 6 This is a schematic diagram of the structure after the fourth marking provided in the embodiments of this application; Figure 7 This is a schematic diagram of a partial explosion after the fourth marking provided in an embodiment of this application; Figure 8 This is a schematic diagram of the structure of the thin-film battery provided in the embodiments of this application; Figure 9 This is a schematic diagram of the structure of the first scribe line provided in an embodiment of this application.

[0020] Explanation of reference numerals in the attached figures: 1-Top electrode; 2-Electron transport layer; 3-Passivation layer; 4-Perovskite light absorption layer; 5-Hole transport layer; 6-Back electrode; 7-Transparent glass substrate; P1-First etched line; P2-Second etched line; P3-Third etched line; P1 & P3-Groove where the first and third etched lines overlap; A-Patterned section; B-Line segment section. Detailed Implementation

[0021] The embodiments of this application are described in detail below, examples of which are illustrated in the accompanying drawings. In the drawings, for clarity, the dimensions of layers, regions, and elements, as well as their relative dimensions, may be exaggerated. Throughout, the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this application can be combined with each other.

[0022] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this application, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion. And the discussion of a second element, component, area, layer, or portion does not imply that the first element, component, area, layer, or portion necessarily exists in this application.

[0023] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0024] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such terms can be used interchangeably where appropriate so that the embodiments of this application described herein can be implemented, for example, in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0025] In this application, when numerical intervals (i.e., numerical ranges) are involved, unless otherwise specified, the distribution of selectable numerical values ​​within the numerical interval is considered continuous, and includes the two endpoints of the numerical interval (i.e., the minimum and maximum values), as well as every numerical value between these two endpoints. Unless otherwise specified, when a numerical interval refers only to integers within that numerical interval, it includes the two endpoint integers of the numerical range, as well as every integer between the two endpoints, which is equivalent to directly listing every integer. When multiple numerical ranges are provided to describe features or characteristics, these numerical ranges can be merged. In other words, unless otherwise specified, the numerical ranges disclosed in this application should be understood to include any and all subranges included therein. The "numerical value" in the numerical interval can be any quantitative value, such as a number, percentage, ratio, etc. The term "numerical interval" can be broadly included to include percentage intervals, ratio intervals, proportion intervals, etc.

[0026] The following provides a definition of the terminology used in this application.

[0027] The first etch line P1 is a etch line located on the back electrode, which is etched through the back electrode; the second etch line P2 is a etch line located on the photoactive functional stack, which is etched through the photoactive functional stack; the third etch line P3 is a etch line located on the top electrode 1 and the photoactive functional stack, which is etched through the top electrode 1 and the photoactive functional stack.

[0028] This application provides a technical solution for thin-film batteries. Based on this, it addresses the problem of ineffective regions ("dead zones") generated during the etching process (P1, P2, P3), leading to a decrease in the geometric fill factor. Details are provided below.

[0029] The fill factor (FF) used in this article refers to the ratio of the actual maximum obtainable power (Pm or Vmp × Jmp) to the theoretical (not actually obtainable) power (Jsc × Voc). Therefore, FF can be determined by the following formula: FF = (Vmp × Jmp) / (Jsc × Voc), where Jmp and Vmp represent the current density and voltage at the maximum power point (Pm), respectively, which is obtained by changing the resistance in the circuit until J × V reaches its maximum value; Jsc and Voc represent the short-circuit current and open-circuit voltage, respectively. The fill factor is a key parameter for evaluating solar cells. Commercial solar cells typically have a fill factor of approximately 60% or higher.

[0030] The open-circuit voltage (Voc) used in this paper is the potential difference between the anode and cathode of the device under conditions without external load connection. The power conversion efficiency (PCE) of the solar cell used in this paper refers to the percentage of power converted from absorbed light into electrical energy. The PCE of a solar cell can be measured by the incident light irradiance (E: W / m²) under standard test conditions (STC). 2 ) and the surface area of ​​solar cells (Ac:m 2 The STC is calculated by dividing by the point of maximum power (Pm). STC typically refers to the value at a temperature of 25°C and an irradiance of 1000 W / m². 2 The spectrum of air quality 1.5 (AM1.5).

[0031] Exemplary embodiments according to this application will now be described in more detail with reference to the accompanying drawings. It should be understood that these exemplary embodiments may be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein.

[0032] The first aspect of this application provides a thin-film battery.

[0033] In some embodiments, the thin-film battery may include a back electrode 6, a photoactive functional stack, and a top electrode 1 stacked sequentially; the photoactive functional stack is used to generate charge carriers and separate and transport them to both sides, and then output them through the back electrode 6 and the top electrode 1 respectively.

[0034] It is understood that the back electrode 6 and the top electrode 1 are opposite sides. In the embodiment of this application, the top electrode 1 is the side closer to the light-receiving surface, and the back electrode 6 is the side farther away from the light-receiving surface.

[0035] Optionally, the top electrode 1 may include at least one of indium tin oxide (ITO), indium zinc oxide (IZO), indium tungsten oxide (IWO), fluorine-doped tin oxide (FTO), indium cerium oxide (ICO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), Cu (copper), Ag (silver), Au (gold), Al (aluminum), carbon electrode, carbon nanotube, and Ag-Al alloy.

[0036] Optionally, the top electrode 1 can be prepared by one or more of the following methods: vapor deposition, printing, spin coating, scraping coating, spray coating, spray pyrolysis, and slot coating.

[0037] Optionally, the thickness of the top electrode 1 can be 100 nm to 300 nm. For example, the thickness of the top electrode 1 can be 100 nm, 150 nm, 200 nm, 280 nm, 300 nm, etc.

[0038] In this embodiment, the material, preparation method and thickness of the back electrode 6 can be referenced from those of the top electrode 1, and will not be repeated here.

[0039] In some embodiments, the photoactive functional stack may include a hole transport layer 5, a perovskite light-absorbing layer 4, and an electron transport layer 2 stacked together. This generates charge carriers, allowing electrons to be transported via the electron transport layer 2 and holes via the hole transport layer 5.

[0040] Preferably, the photoactive functional stack may include a hole transport layer 5, a perovskite light-absorbing layer 4, a passivation layer 3, and an electron transport layer 2 stacked together. Thus, the passivation layer 3 can passivate defects on the surface of the electron transport layer 2, reducing nonradiative recombination. Optionally, the passivation layer 3 may be C 60 At least one of PCBM, ICBA, etc.

[0041] For example, the structural formula of the perovskite light-absorbing layer 4 material can be Cs 0.25 FA 0.75 Pb(I 0.8 Br 0.2 )3, with a band gap of approximately 1.68 eV and a thickness of 500 nm.

[0042] Optionally, the perovskite light-absorbing layer 4 can be prepared by one or more of the following methods: spin coating, blade coating, vapor deposition, printing, spraying, spray pyrolysis, and slot coating.

[0043] Optionally, the hole transport layer 5 may include a self-assembled monolayer material, an inorganic p-type semiconductor material, or an organic polymer material.

[0044] Furthermore, self-assembled monolayer materials can include (4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid (Me-4PACz), (2-(9H-carbazole-9-yl)ethyl)phosphonic acid (2PACz), (4-(9H-carbazole-9-yl)butyl)phosphonic acid (4PACz), and (2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl)phosphonic acid (MeO-2PACz). These materials are small molecules containing carbazole groups and can form ultrathin monolayers on a substrate via terminal phosphonic acid or phosphate groups.

[0045] Furthermore, inorganic p-type semiconductor materials can include copper-based compounds and nickel-based compounds. These materials inherently possess p-type conductivity, exhibiting high hole mobility and good stability. For example, copper-based compounds can be CuI, CuSCN, Cu₂ZnSnS₄, CuO, and Cu₂O; nickel-based compounds can be NiOx.

[0046] Optionally, the organic polymer material can be poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine) (PTAA). Optionally, the thickness of the hole transport layer 5 can be from 1 nm to 100 nm. For example, the thickness of the hole transport layer 5 can be 1 nm, 10 nm, 20 nm, 45 nm, 55 nm, 80 nm, 100 nm, etc.

[0047] Optionally, the electron transport layer 2 includes TiO2, ZnO, WO3, SnO2, Zn2SnO4, fullerenes and their derivatives (C 60 PC 61 One or more of BM, ICBA.

[0048] Optionally, the electron transport layer 2 can be prepared by methods such as spin coating, spraying, spray pyrolysis, slot coating, and atomic layer deposition.

[0049] Optionally, the thickness of the electron transport layer 2 can be from 10 nm to 100 nm. For example, the thickness of the electron transport layer 2 can be 10 nm, 20 nm, 45 nm, 55 nm, 80 nm, 100 nm, etc.

[0050] In some embodiments, see Figure 1The back electrode 6 has several first scribe lines P1; the photoactive functional stack has several second scribe lines P2; and the top electrode 1 and the photoactive functional stack have several third scribe lines P3. Thus, the first scribe lines P1 are used to divide the continuous back electrode 6 into mutually insulated strip-shaped sub-electrodes; the second scribe lines P2 are used to etch through the photoactive functional stack, exposing the underlying back electrode 6 and forming a "groove," while the subsequently deposited top electrode 1 material can fill the trench, connecting the top electrode 1 and back electrode 6 of adjacent sub-cells, realizing series connection of sub-cells; the third scribe lines P3 are used to simultaneously etch through the top electrode 1 and the photoactive functional stack, dividing into independent sub-cell units and preventing the top electrodes 1 of adjacent sub-cells from conducting. In this embodiment, the photoactive functional stack may include a hole transport layer 5, a perovskite light absorption layer 4, a passivation layer 3, and an electron transport layer 2 stacked sequentially.

[0051] In some embodiments, see Figure 3 The first etch line P1 includes a patterned portion and a line segment portion, which are connected. The third etch line P3 also includes a patterned portion and a line segment portion, which are connected to form a continuous etch line. The orthographic projections of the patterned portions of the first etch line P1 and the third etch line P3 onto the plane of the back electrode 6 form a closed geometric shape. The orthographic projections of the line segments of the first etch line P1 and the third etch line P3 onto the plane of the back electrode 6 at least partially overlap. The orthographic projection of the second etch line P2 onto the plane of the back electrode 6 is located within the closed geometric shape. Thus, the first etch line P1 divides the bottom back electrode 6, the second etch line P2 etches the photoactive functional stack, exposing the bottom back electrode 6, and the conductive material filled inside can serve as a conductive channel between the top electrode and the back electrode. The third etch line P3 divides the top electrodes of adjacent sub-cells. The first etch line P1, the second etch line P2, and the third etch line P3 can connect the sub-cells in series to form a circuit. In this application, the first etch line P1 and the third etch line P3 partially overlap, reducing the dead area.

[0052] In some embodiments, see the structural schematic diagram of the first scribe line P1. Figure 9 , Figure 9 The central rectangle represents the pattern portion of the first engraving line P1. Figure 9 The line segment connected to the rectangle is the line segment portion of the first etched line P1. The pattern portion of the second etched line P2 and the pattern portion of the first etched line P1 are mirror-symmetrical on the back electrode. Thus, the pattern portions of the two form a closed geometric shape, and the line segments of the two form the overlapping grooves P1 & P3 of the first and third etched lines.

[0053] In some embodiments, see Figure 2As shown, the first scribe line P1 further includes a first edge scribe line disposed along the first direction, and the third scribe line P1 further includes a second edge scribe line disposed along the first direction. The first edge scribe line and the second edge scribe line are respectively disposed close to two opposite edges of the thin-film battery. Therefore, the edge area can be further utilized, increasing the effective area of ​​the region.

[0054] In some embodiments, see Figure 7 and Figure 8 In the thin-film battery, the first etched line P1 is located on the back electrode 6, and the third etched line P3 is located on the top electrode 1, the electron transport layer 2, the passivation layer 3, the perovskite light absorption layer 4, and the hole transport layer 5. The orthogonal projection of the patterned parts of the two on the plane where the back electrode 6 is located forms a rectangle. The first etched line and the third etched line coincide in the groove P1 & P3 located on the axis of symmetry of the rectangle. The second etched line P2 is located inside the rectangle, and the filler of the second etched line P2 fills the rectangle to form a conductive channel.

[0055] In this embodiment, the closure of the closed geometry is to reduce the dead zone area. The space within the closed geometry can serve as a conductive channel. The distance between the closed geometries and the area of ​​the closed geometries determine the extent of the reduction in dead zone area and the size of the conductive channel space. See also... Figure 2 The distance L1 between adjacent closed geometric shapes is the length of the overlap between the first scribe line P1 and the third scribe line P3. The line segment B represents the region in this embodiment where the dead zone area is reduced. The larger this region's proportion, the greater the reduction in dead zone area. However, the larger this region, the smaller the area left for the closed geometric shape, which is less conducive to carrier transport. Accordingly, in some embodiments, in thin-film batteries, see... Figure 2 In the direction of the line segment B of the first etched line, the ratio of the length L3 of the closed geometric figure to the distance L1 between adjacent closed geometric figures is 1:(0.7~20); preferably, the ratio of the length L3 of the closed geometric figure to the distance L1 between adjacent closed geometric figures is 1:(1~10). This reduces the dead zone area without affecting the carrier transport speed. For example, the ratio of the length L3 of the closed geometric figure to the distance L1 between adjacent closed geometric figures is 1:1, 1:3, 1:5, 1:7, 1:8, 1:9, 1:10, etc.

[0056] It should be noted that the distance L1 between adjacent closed geometric figures is the length of the line segment B between two adjacent pattern parts A; and the length L3 of the closed geometric figure in the direction of the line segment B is the length of the pattern part A in the direction of the connected line segment B. For example, when the shape of the pattern part A is rectangular, it is the distribution length (span) of the rectangle in that direction; when the shape of the pattern part A is triangular, it is the distribution length (span) of the triangle in that direction.

[0057] Preferably, the closed geometric pattern is a periodically distributed pattern in the first direction (etching direction), and the distance L1 between adjacent closed geometric patterns is 100 μm to 1000 μm. This facilitates processing and shaping. For example, the distance L1 can be 100 μm, 300 μm, 500 μm, 600 μm, 800 μm, 1000 μm, etc. Correspondingly, in the first direction, the length L3 of the closed geometric pattern is 10 μm to 1000 μm.

[0058] In an optional embodiment, the area of ​​the closed geometry is 0.7 mm². 2 Currently, in thin-film batteries, the first gradation P1, the second gradation P2, and the third gradation P3 are arranged in parallel, with the width between the first gradation P1 and the third gradation P3 forming a dead zone. Generally, the distance between the first gradation P1 and the third gradation P3 is 40μm to 500μm; therefore, the length of the closed geometry perpendicular to the first direction is 40μm to 500μm. Based on this, the area of ​​the closed geometry can be calculated to be 0.5mm². 2 The following. For example, it can be 0.01mm. 2 ~0.5mm 2 .

[0059] Furthermore, the ratio of the area of ​​the second scribe line P2 to the area of ​​the closed geometry can be 1:(1 to 5). Therefore, while ensuring carrier transport capability, the conductive material within the trench of the second scribe line P2 can be reduced to lower the series resistance of the entire device. For example, the ratio of the area of ​​the second scribe line P2 to the area of ​​the closed geometry can be 1:1, 1:2, 1:3, 1:4, or 1:5.

[0060] In some embodiments, the second scribe line P2 in the thin-film battery is filled with a conductive material, the conductive material being one or more of the following: indium tin oxide (ITO), indium zinc oxide (IZO), indium tungsten oxide (IWO), fluorine-doped tin oxide (FTO), indium cadmium oxide (ICO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), copper (Cu), silver (Ag), gold (Au), aluminum (Al), carbon electrode, carbon nanotubes, or silver-aluminum (Ag-Al) alloy.

[0061] Preferably, the conductive material The resistivity is 10 -4 Ω·cm~10 -3 Ω·cm, carrier mobility 30 cm 2 / (V·s)~50 cm 2 / (V·s). Therefore, by using a highly conductive filler to fill the second scribe line P2, it is possible to achieve series connection between sub-cells while maintaining an effective conductive channel area, which is beneficial for further reducing the dead zone area.

[0062] Optionally, the conductive material filling the second scribe line P2 can be deposited during the deposition of the top electrode 1. In this case, the conductive material filling the second scribe line P2 is made of the same material as the top electrode 1.

[0063] Generally, in thin-film batteries, the width of the first scribe line P1 is 20μm to 100μm. For example, it can be 20μm, 30μm, 50μm, 70μm, 80μm, 100μm, etc.

[0064] Generally, in thin-film batteries, the width of the second scribe line P2 is 20μm to 100μm. For example, it can be 20μm, 30μm, 50μm, 70μm, 80μm, 100μm, etc.

[0065] Generally, in thin-film batteries, the width of the third scribe line P3 is 30μm to 100μm. For example, it can be 30μm, 50μm, 70μm, 80μm, 100μm, etc.

[0066] Generally, in thin-film batteries, the distance L2 between adjacent segments of the third scribe line P3 is 3mm to 10mm. For example, it can be 3mm, 5mm, 6mm, 8mm, or 10mm. Therefore, controlling the width between sub-cells within this range is beneficial for carrier transport.

[0067] In some embodiments, the closed geometry in the thin-film battery is an axisymmetric geometry. This is more advantageous for processing. For example, the patterned portions of the first scribe line P1 and the patterned portions of the third scribe line P3 are symmetrically arranged.

[0068] Furthermore, the closed geometric figure includes at least one of the following: rectangle, circle, ellipse, regular polygon, isosceles triangle, equilateral triangle, rhombus, and isosceles trapezoid.

[0069] Furthermore, regular polygons can be squares, regular pentagons, regular hexagons, regular octagons, etc.

[0070] Preferably, the closed geometric shape is a rectangle, with a length of 10 μm to 1000 μm and a width of 40 μm to 500 μm. This can greatly improve the dead zone area.

[0071] The second aspect of this application provides a method for preparing a thin-film battery.

[0072] In some embodiments, the method for preparing the thin-film battery may include the following steps: S1. Provide a back electrode, and perform a first scribing on the back electrode to form a first scribing line; S2. A photoactive functional stack is prepared on the back electrode, and a second scribing is performed on the photoactive functional stack to form a second scribing line. S3. A top electrode is fabricated on the photoactive functional stack, and top electrode material is filled into the second scribe line. S4. Perform a third scribing on the top electrode and the photoactive functional stack to form a third scribing line; Wherein, the first etch line, the second etch line, and the third etch line satisfy the following: The first etch line and the third etch line each independently include a pattern portion and a line segment portion, and the pattern portion and the line segment portion are connected to form a continuous etch line; The orthographic projections of the pattern portions of the first and third etched lines onto the back electrode plane form a closed geometric shape. The orthographic projections of the line segments of the first and third etched lines onto the back electrode plane at least partially overlap, and the orthographic projection of the second etched line onto the back electrode plane lies within the closed geometric shape. Thus, the thin-film battery described in the first aspect of this application can be formed, thereby optimizing battery performance.

[0073] Optionally, in S1, the first scribing of the back electrode can simultaneously form a first scribe line and a first edge scribe line; thereby, a negative electrode can be formed. This further utilizes the edge region area, increasing the effective area of ​​that region.

[0074] Optionally, in S4, a third scribing is performed on the top electrode and the photoactive functional stack, which can simultaneously form a third scribing line and a second edge scribing line; thereby, the edge region area can be further utilized to increase the effective area of ​​the region.

[0075] In other embodiments, the method for preparing the thin-film battery may include the following steps: S1. Provide a back electrode 6, which is disposed on a transparent glass substrate 7; S2. A first scribing is performed on the back electrode 6 to selectively remove a portion of the back electrode 6, forming a patterned portion of the first scribing line P1. At this point, a structural schematic diagram is shown below. Figure 3 Thus, the back electrode 6 is split, creating a circuit between the insulating batteries on both sides.

[0076] Optionally, the first scribing can also be used to form a first edge scribe line disposed along the first direction, the first edge scribe line being located on one side near the edge of the transparent glass substrate 7, see [link to documentation]. Figure 3 As shown. Therefore, the negative electrode can be obtained.

[0077] Optionally, the line width of the first scribe line P1 is 20μm to 100μm. For example, it can be 20μm, 50μm, 60μm, 80μm, 100μm, etc.

[0078] Optionally, the first scribing is performed using laser scribing; further, the laser source for the laser scribing includes at least one of nanosecond infrared, picosecond green light, picosecond infrared, picosecond ultraviolet, femtosecond green light, femtosecond ultraviolet, and femtosecond infrared.

[0079] S3. A photoactive functional stack is prepared on the back electrode 6. The photoactive functional stack includes a hole transport layer 5, a perovskite light absorption layer 4, a passivation layer 3 and an electron transport layer 2, which are sequentially stacked on the back electrode 6. Optionally, the hole transport layer 5 is prepared using a wet process, and the hole transport layer 5 comprises a self-assembled monolayer.

[0080] Furthermore, wet processes can employ methods such as blade coating, spraying, dip coating, and spraying. During the wet preparation of the hole transport layer 5, the flatness of the back electrode 6 affects the uniformity of the self-assembled monolayer distribution. Uneven distribution of the self-assembled monolayer leads to inconsistent wettability of the perovskite precursor solution, ultimately affecting the film quality of large-area perovskite films. In contrast, the first scribing in S2 of this application, forming a patterned portion of the first scribe line P1, introduces fewer surface defects to the back electrode 6 compared to forming a complete first scribe line P1, thus reducing the impact on the distribution of the self-assembled monolayer.

[0081] Optionally, the thickness of the hole transport layer 5 is 1 nm to 100 nm. For example, it can be 1 nm, 10 nm, 20 nm, 40 nm, 55 nm, 70 nm, 80 nm, 100 nm, etc.

[0082] Optionally, the hole transport layer 5 includes (4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid (Me-4PACz), (2-(9H-carbazole-9-yl)ethyl)phosphonic acid (2PACz), (4-(9H-carbazole-9-yl)butyl)phosphonic acid (4PACz), CuI, CuSCN, Cu2ZnSnS4, CuO, Cu2O, and NiO. x At least one of (2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl)phosphonic acid (MeO-2PACz) and poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine (PTAA).

[0083] S4. Perform a second scribing on the photoactive functional stack to form several discontinuous second scribing lines P2. See the schematic diagram below. Figure 4 Therefore, it serves as a conductive channel connecting the sub-cell.

[0084] Optionally, the line width of the second scribe line P2 is 20 μm to 100 μm; for example, it can be 20 μm, 50 μm, 60 μm, 80 μm, 100 μm, etc.

[0085] Optionally, the second scribing is performed using laser scribing; further, the laser source for the laser scribing includes at least one of nanosecond infrared, picosecond green light, picosecond infrared, picosecond ultraviolet, femtosecond green light, femtosecond ultraviolet, and femtosecond infrared.

[0086] S5. A top electrode 1 is fabricated on the photoactive functional stack, and the top electrode 1 material is filled into the second scribe line P2. Thus, the filling of the second scribe line P2 can be completed in one step when fabricating the top electrode 1, saving operation steps.

[0087] S6. Perform a third scribing on the top electrode 1 and the photoactive functional stack to selectively remove the top electrode 1 and the photoactive functional stack, forming the patterned portion of the third scribing line P3. See the schematic diagram below. Figure 5 Thus, the positive electrode of the sub-cell is formed. The patterned portion of the third scribe line P3 and the patterned portion of the first scribe line P1, projected onto the plane of the back electrode 6, form a closed geometric shape, and the projection of the second scribe line P2 onto the plane of the back electrode 6 lies within this closed geometric shape. This facilitates the formation of a conductive channel.

[0088] Optionally, the third scribing can also form a second edge line along the first direction, located on one side near the other edge of the transparent glass substrate 7. This further utilizes the edge area, increasing the effective area of ​​that region.

[0089] Optionally, the P3 line width of the third scribe line is 30 μm to 100 μm; for example, it can be 30 μm, 50 μm, 60 μm, 80 μm, 100 μm, etc.

[0090] Optionally, the third scribing is performed using laser scribing; further, the laser source for the laser scribing includes at least one of nanosecond infrared, picosecond green light, picosecond infrared, picosecond ultraviolet, femtosecond green light, femtosecond ultraviolet, and femtosecond infrared.

[0091] S7. Perform a fourth scribing, selectively removing the top electrode 1, the photoactive functional stack, and the back electrode 6 to form the segment portion of the third scribing P3 and the segment portion of the first scribing P1. The segment portion of the first scribing P1 and the pattern portion of the first scribing P1 form a continuous scribing line. The segment portion of the third scribing P3 and the pattern portion of the third scribing P3 form a continuous scribing line. The segment portion of the first scribing P1 and the segment portion of the third scribing P3 at least partially overlap. See the structural schematic diagram. Figure 6 Therefore, by forming the complete first scribe line P1 and third scribe line P3 through the fourth scribe, the impact on the hole transport layer 5 is reduced. Furthermore, by forming the segment portion of the first scribe line P1 and the segment portion of the third scribe line P3 in one step, the operation steps can be saved.

[0092] Optionally, the fourth scribing is laser scribing; further, the laser source for the laser scribing includes at least one of nanosecond infrared, picosecond green light, picosecond infrared, picosecond ultraviolet, femtosecond green light, femtosecond ultraviolet and femtosecond infrared.

[0093] In some embodiments, the preparation method further includes a laser edge cleaning operation, which removes the hole transport layer 5, the perovskite light absorption layer 4, the electron transport layer 2, and the top electrode from the non-cell effective power generation area to facilitate subsequent cell encapsulation.

[0094] Optionally, the laser source for the laser edge clearing operation includes at least one of nanosecond infrared, picosecond green light, picosecond infrared, picosecond ultraviolet, femtosecond green light, femtosecond ultraviolet, and femtosecond infrared.

[0095] The second aspect of this embodiment provides a photovoltaic module, including the thin-film battery described in the first aspect of the embodiment or the thin-film battery prepared by the preparation method of the second aspect of the embodiment. Therefore, since the proportion of the dead zone area is controlled, the conversion efficiency of the related battery and module is improved.

[0096] The third aspect of this embodiment provides an electrical device, including the photovoltaic module described in the second aspect.

[0097] In some embodiments, the photovoltaic modules described above can be power generation devices that function as electrical devices. The type of power generation device may include, but is not limited to, integrated power generation. The location of the power generation device may include, but is not limited to, the roof of a vehicle, the back panel, etc.

[0098] Furthermore, the aforementioned electrical devices may include mobile devices, such as mobile phones and laptops, electric vehicles, electric trains, ships and satellites, power generation systems, etc.

[0099] The following section will present performance tests on the fabrication method of the thin-film battery provided in the embodiments of this application, as well as related comparative examples.

[0100]

Example 1

[0101] Step 3: A 30 nm thick 4PACz layer was prepared on FTO by spin coating as hole transport layer 5; Step 4: Deposit a perovskite light absorption layer 4 on the hole transport layer 5 using a one-step spin coating method. The structural formula of the perovskite light absorption layer 4 is Cs. 0.25 FA 0.75 Pb(I 0.8 Br 0.2 )3, with a band gap of approximately 1.68 eV and a thickness of 500 nm; Step 5: Prepare C using thermal evaporation method 60 A layer with a thickness of 20 nm is used as passivation layer 3; Step 6: SnO2 with a thickness of 15 nm is prepared by atomic layer deposition as electron transport layer 2; Step 7: Use picosecond green light according to Figure 4 A second scribe is performed, scribes through electron transport layer 2, passivation layer 3, perovskite light absorption layer 4 and hole transport layer 5, to obtain second scribe line P2, the line width of second scribe line P2 is 70 μm; Step 8: Sputter a 150 nm thick Cu layer using magnetron sputtering as the top electrode 1, and fill the second scribe line P2 with Cu as a conductive channel. Step 9: Using picosecond green laser according to Figure 5 A third scribing is performed, penetrating the top electrode 1, electron transport layer 2, passivation layer 3, perovskite light absorption layer 4, and hole transport layer 5, to obtain the patterned portion of the third scribing line P3. The linewidth of the third scribing line is 30 μm. The patterned portion of the third scribing line P3 is shown below. Figure 5 As shown, the length of the third scribe line P3 pattern is 500μm and the width is 50μm; Step 10: Using picosecond green light according to Figure 6 A fourth scribing process is performed, etching through the top electrode 1, electron transport layer 2, passivation layer 3, perovskite light absorption layer 4, hole transport layer 5, and back electrode to obtain the segment portions of the first scribe line P1 and the third scribe line P3, i.e., the first and third scribe lines overlap in a trench. The linewidth of both the segment portions of the first scribe line P1 and the third scribe line P3 is 50 μm. Afterwards, a nanosecond infrared laser is used for edge cleaning. Specifically, in the direction perpendicular to the first direction, the distance L2 between adjacent segments of the third scribe line P3 is 3 mm.

[0102] Example 2 to Example 7 Other operations are the same as in Example 1. By adjusting the engraving size of the first engraving line P1 pattern portion and the third engraving line P3 pattern portion, closed geometric shapes of different sizes are formed, as detailed in Table 1.

Example 8

[0103] Comparative Example 1 A method for preparing a thin-film battery includes the following steps: Step 1: FTO with a thickness of 600 nm is prepared on a transparent glass substrate 7 by magnetron sputtering to serve as the back electrode 6; Step 2: Use a nanosecond infrared laser to process the FTO-coated glass according to... Figure 3 The first scribing is performed as shown, piercing through the FTO to obtain several parallel first scribing lines P1, the width of which is 30μm. Step 3: Prepare a 30 nm thick 4PACz, i.e. hole transport layer 5, on FTO using spin coating; Step 4: Deposit a perovskite light absorption layer 4 on the hole transport layer 5 using a one-step spin coating method. The structural formula of the perovskite light absorption layer 4 is Cs. 0.25 FA 0.75 Pb(I 0.8 Br 0.2 )3, with a band gap of approximately 1.68 eV and a thickness of 500 nm; Step 5: Prepare C using thermal evaporation method 60 A layer with a thickness of 20 nm is used as passivation layer 3; Step 6: SnO2 with a thickness of 15 nm is prepared by atomic layer deposition as electron transport layer 2; Step 7: Use picosecond green light to perform a second scribing, etch through electron transport layer 2, passivation layer 3, perovskite light absorption layer 4 and hole transport layer 5 to obtain a continuous second scribing line P2. The width of the second scribing line P2 is 70 μm, and the distance between the second scribing line P2 and the first scribing line P1 is 50 μm. Step 8: Sputter a 150 nm thick Cu layer using magnetron sputtering as the top electrode 1, and fill the second scribe line P2 with Cu as a conductive channel. Step 9: Using picosecond green laser according to Figure 5 A third scribing is performed, etching through the top electrode 1, electron transport layer 2, passivation layer 3, perovskite light absorption layer 4, and hole transport layer 5, to obtain a continuous third scribing line P3. The width of the third scribing line P3 is 30 μm, and the distance between the third scribing line P3 and the second scribing line P2 is 50 μm.

[0104] IV tests were performed on the examples and comparative examples, and the test data are shown in Table 1: Table 1

[0105] Continued from Table 1

[0106] Note: In Table 1, rectangles are closed geometric figures; L1 is the distance between adjacent closed geometric figures; L3 is the length of the rectangle in the first direction.

[0107] As can be seen from Table 1 above, the short-circuit current density of the batteries in Examples 1 to 8 is higher than that in Comparative Example 1. The main influencing factor is that the effective area of ​​the thin-film batteries in Examples 1 to 8 is increased to varying degrees compared with the effective area of ​​Comparative Example 1. In Examples 1 to 3, the effective area increases sequentially, leading to an increase in the battery's short-circuit current density and thus improving the battery's conversion efficiency. Examples 4 and 5 have large effective areas but different dead zone spacings. Example 5 has a larger dead zone spacing, resulting in a larger effective area and a correspondingly higher short-circuit current density, leading to better device performance. However, Example 6 has an excessively short dead zone spacing, resulting in a smaller effective area and lower short-circuit current density. In Example 7, the second scribe line P2 is too short. Although the dead zone area is small, the excessively high resistance of the second scribe line P2 affects the current transmission between sub-cells, impacting battery performance, mainly manifested in lower short-circuit current density and fill factor. The scribe line parameters in Example 8 are the same as in Example 1, but the first scribe line P1 in Example 8 is formed in one step, causing aggregation of the monomolecular self-assembled layers on both sides of the first scribe line P1, which affects the device's fill factor and consequently its efficiency. In Example 1, the first scribe line P1 is formed in two steps, reducing the aggregation of monomolecular self-assembled layers.

[0108] It should be noted that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential," etc., are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. The directional terms "inner" and "outer" refer to the inside or outside relative to the outline of the component itself. For example, if a device in the drawings is inverted, a device described as "above" or "on top of" other devices or structures will subsequently be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein are interpreted accordingly.

[0109] It should also be noted that the terms "one embodiment," "another embodiment," and "embodiment" used in this application refer to specific features, structures, or characteristics described in connection with that embodiment, which are included in at least one embodiment described in the general description of this application. The appearance of the same expression in multiple places in the specification does not necessarily refer to the same embodiment. Furthermore, when a specific feature, structure, or characteristic is described in connection with any embodiment, the intention is to suggest that implementing such a feature, structure, or characteristic in conjunction with other embodiments also falls within the scope of this application.

[0110] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0111] It should also be noted that the above are merely preferred embodiments of this application and do not limit the scope of patent protection of this application. Any equivalent structural or procedural changes made using the content of this application’s specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of this application.

Claims

1. A thin-film battery, characterized in that, It includes a back electrode, a photoactive functional stack, and a top electrode stacked sequentially; The back electrode is provided with several first etched lines; The photoactive functional stack is provided with several second scribe lines; The top electrode and the photoactive functional stack are provided with several third scribe lines; The first etched line and the third etched line each independently include a pattern portion and a line segment portion, and the pattern portion and the line segment portion are connected to form a continuous etched line; The orthographic projections of the pattern portions of the first and third etched lines onto the back electrode plane form a closed geometric shape. The orthographic projections of the line segments of the first and third etched lines onto the back electrode plane at least partially overlap. The orthographic projection of the second etched line onto the back electrode plane is located within the closed geometric shape.

2. The thin-film battery according to claim 1, characterized in that, The closed geometric figure is a periodically distributed figure in the first direction; In the direction of the line segment of the first etched line, the ratio of the length of the closed geometric figure to the distance between adjacent closed geometric figures is 1:(0.7~20).

3. The thin-film battery according to claim 2, characterized in that, The ratio of the length of the closed geometric figure to the distance between adjacent closed geometric figures is 1:(1 to 10).

4. The thin-film battery according to claim 1, characterized in that, In the first direction, the distance between adjacent closed geometric figures is 100 μm to 1000 μm; and / or The area of ​​the closed geometric figure is 0.7 mm². 2 The following; and / or The ratio of the area of ​​the second etched line to the area of ​​the closed geometric figure is 1:(1-5).

5. The thin-film battery according to claim 1, characterized in that, The second scribe line is filled with a conductive material; The conductive material is one of the following: indium tin oxide, indium zinc oxide, indium tungsten oxide, fluorine-doped tin oxide, indium cerium oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, Cu, Ag, Au, Al, carbon electrode, carbon nanotube, and Ag-Al alloy.

6. The thin-film battery according to any one of claims 1 to 5, characterized in that, The line width of the first scribe line is 20 μm to 100 μm; and / or The line width of the second scribe line is 20 μm to 100 μm; and / or The line width of the third scribe line is 30μm to 100μm.

7. The thin-film battery according to claim 1, characterized in that, The closed geometric figure is an axisymmetric figure.

8. The thin-film battery according to claim 7, characterized in that, The closed geometric figure includes at least one of the following: rectangle, circle, ellipse, regular polygon, isosceles triangle, rhombus, and isosceles trapezoid.

9. The thin-film battery according to claim 8, characterized in that, When the closed geometric shape is a rectangle, the length of the rectangle is 10 μm to 1000 μm, and the width of the rectangle is 40 μm to 500 μm.

10. The thin-film battery according to claim 1, characterized in that, The photoactive functional stack includes a hole transport layer, a perovskite light absorption layer, and an electron transport layer, which are sequentially stacked on the back electrode.

11. A photovoltaic module, characterized in that, Includes the thin-film battery as described in any one of claims 1 to 10.

12. An electrical appliance, characterized in that, Including the photovoltaic module of claim 11.

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