Calibration wafer and wafer vision inspection device

Abstract

The embodiment of the present disclosure discloses a calibration wafer and a wafer visual detection device, the calibration wafer comprises: a wafer body; a plurality of scale rings which are sequentially and inwardly sleeved by the side edges of the wafer body; the centers of each scale ring coincide with the center of the wafer body; a plurality of scale lines which are uniformly distributed along the circumference of the wafer body; each scale line is directed to the center of the wafer body from the side edge of the wafer body, and each scale line intersects at least part of the scale rings; and an origin mark is located on one scale line.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and more particularly to a wafer visual inspection device. Background Technology

[0002] For some wafer edge processing processes, such as wafer edge cleaning, wafer edge etching, or wafer edge deposition, wafer drive misalignment, wafer rotation misalignment, or other process parameter deviations and deterioration can lead to wafer edge deviations and reduced yield. Examples include narrowing or widening of the edge processing area, or off-center edge processing position. It is necessary to detect the wafer edge processing misalignment status and width, and to calibrate the wafer edge processing process. There is still considerable room for improvement in the detection and calibration of wafer edge processing processes. Utility Model Content

[0003] According to some aspects of embodiments of this disclosure, a calibration wafer is provided, comprising: Wafer body; Multiple graduated rings are sequentially fitted inward from the side of the wafer body; the center of each graduated ring coincides with the center of the wafer body. Multiple scale lines are evenly distributed along the circumference of the wafer body; each scale line points from the side of the wafer body to the center of the wafer body, and each scale line intersects with at least a portion of the scale rings; The origin is marked on one of the scale lines.

[0004] In some embodiments, the scale ring includes: Multiple nested first scale rings, wherein the first scale rings are a continuous structure; Multiple second scale rings are located between two adjacent first scale rings; the second scale rings include multiple scale segments spaced apart along the circumferential direction of the wafer body.

[0005] In some embodiments, the wafer body has a notch on its side, the origin mark is located on a scale line pointing from the notch to the center of the wafer body, and the origin mark does not coincide with the notch.

[0006] In some embodiments, the calibration wafer further includes: Multiple positioning marks are located on the side of the wafer body, and one of the positioning marks is located on one of the scale lines; the multiple positioning marks and the origin mark are evenly distributed in the circumferential direction of the wafer body.

[0007] In some embodiments, the line connecting one of the positioning marks and the origin mark passes through the center of the wafer body; the other positioning marks are symmetrically distributed with respect to the center of the wafer body.

[0008] In some embodiments, the calibration wafer further includes: Multiple scales, one of which is located on a scale line, are evenly distributed along the circumference of the wafer body; the scales have multiple graduations arranged in the radial direction of the wafer body, and the graduations of the scales are used to characterize the distance relative to the center of the wafer body.

[0009] In some embodiments, one of the scales is located on the extension of the line connecting the origin mark and the center of the wafer body.

[0010] In some embodiments, the calibration wafer further includes: An angle marker is used to indicate the rotation angle of each of the scale lines relative to the center of the wafer body; the angle marker is located on one side of the scale line along the circumferential direction of the wafer body, or the angle marker is located on the scale line; A radius marker is located on one side of the scale along the circumferential direction of the wafer body; the radius marker is used to indicate the distance of each scale mark on the scale from the center of the wafer body.

[0011] In some embodiments, the scale ring, the scale lines, the origin mark, and the scale are all embedded in the wafer body and exposed from the upper surface of the wafer body.

[0012] According to some aspects of embodiments of the present disclosure, a wafer vision inspection apparatus is provided for inspecting a calibrated wafer, the wafer vision inspection apparatus comprising: A rotating disk is used to hold the calibration wafer; The upper image acquisition component, located above the rotating disk, is used to acquire image information of the upper surface of the edge region of the calibration wafer; The lower image acquisition component, located on the back side of the rotating disk, is used to acquire image information of the lower surface of the edge of the calibration wafer; A reflective component is located above the rotating disk; the reflective component reflects light from the upper surface of the calibration wafer horizontally; the reflective component and the rotating disk move relative to each other in the horizontal direction. An edge image acquisition component is located outside the edge of the rotating disk and is configured correspondingly to the reflection component; the edge image acquisition component acquires global image information of the upper surface of the calibration wafer by receiving the reflected light from the reflection component.

[0013] This disclosure provides a calibration wafer for detecting and calibrating wafer edge processing. The calibration wafer includes a wafer body and multiple graduated rings sequentially nested inward from the side of the wafer body. The center of each graduated ring coincides with the center of the wafer body, and each graduated ring represents or marks a distance from the center of the wafer body. It also includes multiple straight graduation lines evenly distributed along the circumference of the wafer body, each graduation line pointing from the side of the wafer body to its center. Each graduation line intersects at least a portion of the graduated rings. An origin mark is included, located on one graduation line, defining that graduation line as the 0° position of the wafer body. The other graduation lines indicate the rotation angle relative to the center of the wafer body. Wafer edge processing can be performed on the calibration wafer. The graduated rings and graduation lines are used to monitor the offset direction and processing width of the wafer edge processing, and the wafer edge processing process can be calibrated accordingly to reduce process deviations. Attached Figure Description

[0014] Figures 1 to 3 This is a schematic diagram of a calibration wafer provided according to an embodiment of this disclosure; Figure 4 This is a schematic diagram of a wafer vision inspection device provided according to an embodiment of the present disclosure; Figure 5 This is a schematic diagram of a wafer edge washing apparatus provided according to an embodiment of the present disclosure; Figure 6 and Figure 7 This is a schematic diagram of calibrated wafer visual inspection provided according to an embodiment of the present disclosure. Detailed Implementation

[0015] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of this disclosure. However, it will be apparent to those skilled in the art that this disclosure may be practiced without one or more of these details. In other instances, to avoid confusion with this disclosure, certain technical features well-known in the art have not been described; that is, not all features of actual embodiments are described herein, nor are well-known functions and structures described in detail.

[0016] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this disclosure, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion. And the discussion of a second element, component, area, layer, or portion does not imply that the first element, component, area, layer, or portion necessarily exists in this disclosure.

[0017] It should be understood that the phrases "some embodiments" or "an embodiment" throughout the specification mean that a particular feature, structure, or characteristic related to an embodiment is included in at least one embodiment of this disclosure. Therefore, "some embodiments" or "an embodiment" appearing throughout the specification do not necessarily refer to the same embodiment. Furthermore, these particular features, structures, or characteristics can be combined in any suitable manner in one or more embodiments.

[0018] The wafer edge processing technology proposed in this disclosure may include, but is not limited to, wafer edge cleaning, wafer edge etching, or wafer edge deposition. Both wafer edge cleaning and wafer edge etching can be referred to as wafer edge cleaning processes. In a wafer edge cleaning process, a rotating disk (or carrier disk) drives the wafer to rotate, and nozzles spray etchant or cleaning agent onto the front and back edges of the wafer to remove the film layer within the front edge or the film layer at the back edge. The removed film layer may include, but is not limited to, photoresist, silicon oxide, silicon nitride, silicon oxynitride, etc. Different etchants are used depending on the material composition of the film layer to be removed. In wafer edge cleaning processes, it is easy to encounter situations where the edge cleaning width is too large or too narrow, or where the edge cleaning area is off-center.

[0019] In wafer edge deposition processes, a film is specifically deposited at the wafer edge to protect it. A ring of film can be deposited around the back edge or the back edge of the wafer, while no film is deposited at the center. However, in wafer edge deposition processes, it is easy for the deposited film to be too wide or too narrow, or for the deposited film to be off-center. Therefore, the above-mentioned wafer edge treatment process needs to be monitored.

[0020] In some embodiments, taking wafer edge washing as an example, the wafer's side edges have bevels or chamfers, which results in different edge washing widths in different areas of the wafer. A notch penetrating the wafer's side is used to mark the wafer's orientation, such as the notch being located at the 6 o'clock position or the 0° position. The notch position can be identified first, and wafer calibration can be performed with the notch position as the 0° position. Then, edge washing data for the four regions of 0°, 90°, 180°, and 270° after edge washing can be measured. Based on this data, software can calculate the motion trajectory compensation value for wafer rotation to achieve edge washing calibration. This method requires high-precision measurement equipment, and the calibration data cannot address edge washing differences caused by variations in chamfers between wafers from different manufacturers. Therefore, this disclosure provides a wafer calibration method applicable to wafer edge processing calibration. Wafer calibration utilizes visual inspection equipment, combined with various scale markings, to monitor the width and offset of the processing within the wafer edge.

[0021] According to some aspects of embodiments of this disclosure, Figure 1 A calibration wafer 100 is provided, comprising: Wafer body 101; Multiple scale rings 110 are sequentially arranged from the side of the wafer body 101 inwards; the center of each scale ring 110 coincides with the center of the wafer body 101. Multiple scale lines 120 are evenly distributed along the circumference of the wafer body 101; each scale line 120 points from the side of the wafer body 101 to the center of the wafer body 101, and each scale line 120 intersects with at least a portion of the scale ring 110. Figure 1 Each scale line 120 intersects with each scale ring 110, or some scale rings 110 do not intersect with the scale lines 120, such as... Figure 1 The innermost scale ring 110, or the multiple innermost scale rings 110, or any other scale ring 110, may not intersect with the scale line 120; the scale line 120 may be as follows: Figure 1 The continuous line shown can also be a discontinuous line composed of multiple short lines spaced apart. The short lines of scale line 120 intersect a scale ring 110; the origin mark 131 is located on a scale line 120.

[0022] Reference Figure 1As shown, the wafer body 101 may include wafers of various types and sizes, including silicon-based wafers, silicon carbide wafers, or wafers of other materials, without limitation on wafer size. The side of the wafer may have a through-wafer notch 102 to mark the wafer's orientation, such as the notch 102 being located at the 6 o'clock position or the 0° position. This notch 102 is used to mark or identify directional positions within the wafer during semiconductor fabrication. Alternatively, in other examples, it may be related to... Figure 1 The wafer body 101 is different. The wafer has a flat edge at the 6 o'clock position. The overall shape of the wafer is that the 6 o'clock position has a straight edge, and the opposite side of the straight edge is an arc. The straight edge at the 6 o'clock position is used as a positioning edge to mark the direction of the wafer.

[0023] Figure 1 As shown, the center of the wafer body 101 is denoted as center O. Multiple concentric scale rings 110 are disposed on the wafer body 101, with the center of each scale ring 110 coinciding with center O. Some scale rings 110 can be continuous circular lines, while others can be multiple scale segments arranged at intervals around center O. Each scale segment is an arc, and the center of each arc coincides with center O. The line connecting all the arcs forms a complete circle. A side of the wafer body 101 can also serve as a scale ring 110.

[0024] The graduation line 120 is a straight line extending from the side of the wafer body 101 towards the center O. With center O as the center of rotation, a graduation line 120 is set at intervals of 360°, dividing the wafer body's 360° central angle equally. The side arc lengths between any two graduation lines 120 are equal, and the corresponding central angles are equal. The central angle corresponding to the side arc between any two graduation lines 120 can be 5°, 10°, 15°, 20°, etc. The central angle is divisible by 360°. The smaller the central angle, the more side arcs are divided, and the more precise the monitored edge angle. For example... Figure 1 The central angle is 10°.

[0025] The origin mark 131 is used to mark the 0° position of the wafer. The origin mark 131 can be set on any scale line 120, with any scale line 120 serving as the 0° position. The notch 102 on the side of the wafer can serve as the origin mark 131, or other origin marks 131 can be set to avoid the notch 102. The origin mark 131 is located on a scale line 120, defining that scale line 120 as the 0° position of the wafer body 101. Other scale lines 120 are used to indicate the rotation angle relative to the center O.

[0026] In some embodiments, combined with Figure 1 The following example illustrates the use of calibration wafer 100, using wafer edge washing as an example. Photoresist is spin-coated onto calibration wafer 100, and the photoresist will... Figure 1The calibration wafer 100 has a graduated surface cover. The calibration wafer 100 is rotated by a rotating disk (or carrier disk). An etchant is sprayed onto the edge of the calibration wafer 100 using a nozzle to remove the photoresist on the edge of the calibration wafer 100. After the photoresist is removed, the wafer is exposed. Figure 1 The various scale markings within the calibrated wafer 100 are calibrated. The radius corresponding to the scale ring 110 is pre-designed and known. The 0° scale line 120 located by the origin mark 131 is known, so the angle corresponding to each scale line 120 is known. Based on the morphology of the residual photoresist and combined with the various scale markings, the distribution of the current residual photoresist on the surface of the calibrated wafer 100 can be determined. Thus, the width distribution and edge deviation can be known. The positions of the rotating disk, wafer transfer device, and nozzle of the wafer edge washing device are calibrated so that the process performance meets the process control standards.

[0027] The distribution of residual photoresist on calibration wafer 100 can be determined using a wafer vision inspection device. Image acquisition components such as cameras, webcams, or CMOS image sensors can be used to acquire images of the residual photoresist distribution on calibration wafer 100, and the process offset can be determined by comparing these images with various scale markings. Origin alignment can also be used for zeroing the image acquisition components. The photoresist can be replaced with other materials, such as silicon oxide or silicon nitride, and the etchant composition can be changed to etch the film layer on the edge of calibration wafer 100.

[0028] In some embodiments, combined with Figure 1 The following example illustrates the use of a calibrated wafer 100, using a wafer edge deposition process. A ring-shaped film is deposited at the wafer edge, covering... Figure 1 The calibration wafer 100 has scale markings. By combining these markings, the current film layer distribution morphology can be determined, including the width and width distribution, as well as the edge deviation. This allows for the adjustment of the wafer edge deposition apparatus. A wafer vision inspection device can then inspect the calibration wafer 100 to obtain the film layer distribution at its edges.

[0029] In some embodiments, the scale ring 110 includes: a plurality of sleeved first scale rings 111, the first scale rings 111 having a continuous structure; the spacing between adjacent first scale rings 111 may be equal or unequal, and the first scale rings 111 are indicated by solid circles in the figure; the spacing between the first scale rings 111 can be set according to the set width of the edge processing process and the wafer size, and the spacing distance may be, but is not limited to: 0.5~2mm, for example... Figure 1 The wafer body 101 has a 1mm diameter; multiple second graduation rings 112 are located between two adjacent first graduation rings 111; each second graduation ring 112 includes multiple graduation segments spaced apart along the circumferential direction of the wafer body 101 (or along the outer periphery of the first graduation rings 111); the second graduation rings 112 are... Figure 1 The dashed circle in the middle is used for illustration. The interval between the second scale ring 112 and the first scale rings 111 on both sides is equal.

[0030] In some embodiments, refer to Figure 1 As shown, the wafer body 101 has a notch 102 on its side. An origin mark 131 is located on a scale line 120 pointing from the notch 102 to the center O of the wafer body 101, and the origin mark 131 does not coincide with the notch 102. The origin mark 131 avoids the notch 102 and is set on the line connecting the notch 102 and the center O, or at any position on the scale line 120 between the notch 102 and the center O, to indicate the 0° position of the wafer. For example, Figure 1 The origin mark 131 can be set at the intersection of the scale line 120 (0° scale line 120) at the 6 o'clock position on the wafer and a first scale ring 111. The origin mark 131 avoids the notch 102, which can improve the optical recognition and zeroing positioning of the origin by the subsequent image acquisition components, and can reduce the calibration error caused by transmission, thereby improving the detection accuracy and calibration efficiency.

[0031] In some embodiments, refer to Figure 2 As shown, the calibration wafer 100 also includes: a plurality of positioning marks 132 located on the side of the wafer body 101, one positioning mark 132 located on a scale line 120; the plurality of positioning marks 132 and the origin mark 131 are evenly distributed in the circumferential direction of the wafer body 101; the plurality of positioning marks 132 and the origin mark 131 divide the central angle (360°) of the wafer body 101 equally. Figure 2 In this context, the multiple positioning marks 132 and the origin mark 131 are evenly distributed on the circumference of the wafer body 101, meaning that each mark is evenly distributed on the 360° circumference of the wafer body 101. The multiple positioning marks 132 and the origin mark 131 are respectively connected to the center of the wafer body 101, and the included angle between any two adjacent connecting lines is equal. The marks may not be distributed on the same circle.

[0032] Positioning marks 132 are used to quickly capture and locate the film layer distribution position on wafer 100. For example, they can quickly locate areas between two positioning marks 132 where the edge width is too large or the edge is off-center. The angles corresponding to these two positioning marks 132 are in the 180°~270° range. Further analysis can then be performed on the specific area and width of the off-center edge. Positioning marks 132 are located on the upper surface of the side edge, not on the horizontal sidewall. Multiple positioning marks 132 can work in conjunction with the origin mark 131 to zero-position the vision inspection device. When the origin mark 131 is obstructed, multiple positioning marks 132 can be used to find the 0° position of the wafer for zero-alignment.

[0033] Figure 2The three positioning marks 132 shown are merely an example; more positioning marks 132 may be used but are not shown. The central angle between any two adjacent positioning marks 132 is equal, and the central angle between any two adjacent origin marks 131 and positioning marks 132 is also equal, such as... Figure 2 The central angle of the wafer body 101 is 90°. If four positioning marks 132 are set, the 360° central angle of the wafer body 101 is divided into five parts, and the single central angle is 72°; if five positioning marks 132 are set, the central angle is divided into six parts, and the single central angle is 60°.

[0034] The shapes of the origin mark 131 and the positioning mark 132 can be different to facilitate quick identification. For example, the origin mark 131 may be, but is not limited to, a circle or an ellipse; the positioning mark 132 may be, but is not limited to, a plus sign or a minus sign. Alternatively, both the origin mark 131 and the positioning mark 132 may be intersecting structures of two strips, with the origin mark 131 obtained by rotating the positioning mark 132 by an angle.

[0035] In some embodiments, refer to Figure 2 As shown, the line connecting a positioning mark 132 and the origin mark 131 passes through the center O of the wafer body 101; other positioning marks 132 are symmetrically distributed with respect to the center O of the wafer body 101; here, the symmetrical distribution means that they are distributed in pairs.

[0036] Figure 2 Taking the combination of three positioning markers 132 and one origin marker 131 as an example, the origin marker 131 and one positioning marker 132 are respectively located at Figure 2 The wafer body 101 is positioned at the 6 o'clock and 12 o'clock positions; two other positioning marks 132 are located at the 3 o'clock and 9 o'clock positions respectively; the angle between the marks and the center O is 90°. In other embodiments, a combination of five positioning marks 132 and one origin mark 131 can be provided. The position of the origin mark 131 is known, and the approximate orientation of the positioning marks 132 positioned opposite the center O relative to the origin mark 131 can be determined. The positioning mark 132 is then set on the side of the wafer body 101; the other positioning marks 132 are arranged at a 60° angle.

[0037] In some embodiments, refer to Figure 2As shown, the calibration wafer 100 also includes: a plurality of scales 140, each scale 140 located on a graduation line 120, and the plurality of scales 140 being evenly distributed along the circumference of the wafer body 101; the scales 140 have a plurality of graduations arranged in the radial direction of the wafer body 101, and the graduations of the scales 140 are used to characterize the distance relative to the center O of the wafer body 101. The scales 140 can be made to avoid the wafer notch 102 to reduce the influence of the notch 102 on the accuracy of the scales 140.

[0038] Figure 2 The three positioning scales 140 shown are merely examples, and the angle between the extensions of adjacent positioning scales 140 is 120°. There is no limit to the number of positioning scales 140; for example, four can be set. Each scale 140 has multiple straight or arc-shaped graduations representing distances. Each graduation can be used to identify or represent the distance or radius of the current position from the center O, thereby enabling rapid identification of the distribution width of photoresist or other films on the calibration wafer 100.

[0039] In some embodiments, refer to Figure 2 As shown, a scale 140 is located on the extension of the line connecting the origin mark 131 and the center O of the wafer body 101.

[0040] A scale 140 is positioned to avoid the notch 102. A scale 140 is placed on the opposite side of the origin mark 131 (or the notch 102) passing through the center O. The film layer distribution along the diameter direction passing through the notch 102 can be monitored using the scale 140 on the opposite side of the origin mark 131. In some embodiments, the film layer distribution on the calibration wafer 100 has an approximately symmetrical distribution relative to the center O. If too much film is distributed or removed on one side, too little is distributed or removed on the opposite side. The distribution pattern on the notch side can be inferred from the distribution pattern on the opposite side of the notch 102.

[0041] In some embodiments, refer to Figure 2 As shown, the calibration wafer 100 further includes: An angle marker is used to indicate the rotation angle of each scale line 120 relative to the center O of the wafer body 101; the angle marker is located on one side of the scale line 120 along the circumferential direction of the wafer body 101, or the angle marker is located on the scale line 120. The radius marker is located on one side of the scale 140 along the circumferential direction of the wafer body 101; the radius marker is used to indicate the distance of each scale mark on the scale 140 from the center O of the wafer body 101.

[0042] The angle and radius markings can be specific Arabic numerals, and can be written on the wafer body 101 using methods such as laser or ion beam. The angle markings are located near the 120° graduation line, arranged counterclockwise, with each 10° marking listed consecutively. The angle markings are located relatively close to the side of the wafer body 101.

[0043] In some embodiments, the radius identifier is as follows: Figure 2 The 12 o'clock position of the middle wafer body 101 is shown; the radius markings of other scales 140 are not shown. Figure 2 The units 145 and 146 in mm represent the radius of the first scale ring 111 of the solid line circle; or the distance between the scale 140 and the corresponding scale ring 111 and the center O of the circle. Figure 2 The 140 scale on the central scale is marked with straight lines or arcs, with adjacent scales spaced 0.1 mm apart. Figure 2 The spacing between the various first scale rings 111 and the various second scale rings 112 in the wafer body 101 can be equal, and the radius markings can be arranged in a continuous arithmetic progression. The interval between adjacent scale markings in each region can be equal. In other examples, there may be cases where the spacing between some scale rings is not equal. For example, the spacing between the scale rings on the inner ring near the center O of the wafer body 101 is larger, while the spacing between the scale rings on the outer ring of the wafer body 101 is smaller, or the spacing between the scale rings on the inner ring is smaller while the spacing between the scale rings on the outer ring is larger. In this case, all radius markings are not arranged in a continuous arithmetic progression, but are set according to the actual radius of each scale ring. The interval between scale markings in different regions is not equal, but the interval between two adjacent scale rings is equal. In this embodiment, the scale ring is any one of the various first scale rings 111 and the various second scale rings 112.

[0044] In some embodiments, Figure 2 As shown, the scale ring 110, scale line 120, origin mark 131, positioning mark 132 and scale 140 are all embedded in the wafer body 101 and exposed from the upper surface of the wafer body 101.

[0045] Taking the scale ring 110 as an example, it can be directly written onto the wafer body 101 using a laser or ion beam, and can be, for example, a recessed structure of trenches that are not fully filled. Alternatively, the wafer body can be etched to form continuous circular trenches or spaced short arc trenches, and the trenches can be filled with a material different from that of the wafer body 101 to form the scale ring 110. This material has a large contrast difference with the wafer body 101 during visual imaging, so as to facilitate the identification of the scale position. For example, the material of the scale ring 110 may include, but is not limited to, tungsten, copper, carbon, silicon oxide, silicon nitride, etc.

[0046] In some embodiments, refer to Figure 3 As shown, a side view of the calibration wafer 100 is illustrated, with a scale ring 110 having a depth of 0~0.5μm and a width of 0~0.5μm; for example, the scale ring 110 has a depth of 0.2μm and a width of 0.3μm.

[0047] According to some aspects of embodiments of this disclosure, Figure 4A wafer vision inspection device 300 is provided for inspecting, for example, Figure 1 and Figure 2 The calibration wafer 100 shown; or the wafer vision inspection device 300 may include the calibration wafer 100, that is, the calibration wafer 100 is a part of the accessories or consumables of the wafer vision inspection device 300; the wafer vision inspection device 300 includes: The rotating disk 301 is used to carry the calibration wafer 100; the upper image acquisition component 302 is located above the rotating disk 301 and is used to acquire image information of the upper surface of the edge region of the calibration wafer 100. The lower image acquisition component 303 is located on the back side of the rotating disk 301 and is used to acquire image information of the lower surface of the edge of the calibration wafer 100. The reflective component 305 is located on the rotating disk 301; the reflective component 305 reflects light from the upper surface of the calibration wafer 100 in the horizontal direction; the reflective component 305 and the rotating disk 301 move relative to each other in the horizontal direction. The edge image acquisition component 304 is located on the outer side of the edge of the rotating disk 301 and is correspondingly set with the reflection component 305. The edge image acquisition component 304 acquires global image information of the upper surface of the calibration wafer 100 by receiving the reflected light from the reflection component 305. Figure 4 In the configuration, the edge image acquisition component 304 may be located outside the rotating disk 301 in the horizontal direction; and above the rotating disk 301 in the vertical direction; the edge image acquisition component 304 and the reflection component 305 are aligned (or correspond) in the horizontal direction or near the horizontal direction. The image acquisition component may include, but is not limited to, a camera, a webcam, or a CMOS image sensor.

[0048] The visual inspection device 300 can be used with Figure 5 The wafer edge washing device 400 is used in conjunction with the wafer edge deposition device to form a wafer edge washing system; the vision inspection device 300 can be used in conjunction with the wafer edge deposition device to form a wafer edge deposition system.

[0049] Reference Figure 5 As shown, the wafer edge washing apparatus 400 may include a carrier disk 401 and nozzles 402 located on the carrier disk 401; the carrier disk drives the wafer to rotate. A calibration wafer 100 covered with photoresist is placed on... Figure 5 On the carrier disk 401, the calibration wafer 100 is rotated by the carrier disk 401. The nozzle 402 sprays etchant onto the edge of the calibration wafer 100 to remove the photoresist on the edge of the calibration wafer 100. At this time, the photoresist is removed and the wafer is exposed. Figure 1 Calibrate the various scale markings within the wafer.

[0050] Figure 4In this configuration, a reflective component 305 is mounted on a rotating disk 301. The reflective component 305 may include one or more mirrors, such as a mirror at a 45° angle to the vertical direction, used to reflect a vertical light path into a horizontal light path. Alternatively, more mirrors can be used, reflecting the vertical light path into a horizontal light path through multiple reflections, allowing the edge image acquisition component 304 on the horizontal side to acquire image information from the calibration wafer 100. The reflective component 305 also includes various lenses and refractive mirrors for focusing and scaling. Furthermore, the reflective component 305 may integrate various light sources to provide supplementary illumination to the calibration wafer surface, such as, but not limited to, LED light sources.

[0051] The reflective component 305 may include a light-incident surface or a light-incident end, aligned vertically with the upper surface of the calibration wafer 100; the reflective component 305 may also include a light-emitting surface or a light-emitting end, aligned horizontally with the edge image acquisition component 304, or aligned in a near-horizontal direction with the edge image acquisition component 304. The reflective component 305 and the rotating disk 301 move relative to each other in the horizontal direction, which may involve the reflective component 305... Figure 4 The rotating disk 301 moves horizontally in the left-right direction, while the rotating disk 301 only rotates without moving horizontally; or the reflector component 305 remains stationary, and the rotating disk 301 moves horizontally in the left-right direction. Figure 4 The left and right movement can also cause the calibration wafer 100 to rotate. For example, the rotating disk 301 can be driven by a motor or other drive components to move horizontally along the horizontal axis, guide rails, or other components at the bottom of the rotating disk 301. Alternatively, the reflective component 305 can be driven by a motor or other drive components to move horizontally along the horizontal axis, guide rails, or other components above the rotating disk 301.

[0052] Figure 4 In this process, when there is a relative movement between the reflective component 305 and the rotating disk 301 in the left-right (horizontal) direction, the upper surface of the calibration wafer 100 can be scanned by the reflective component 305. The light from the upper surface of the calibration wafer 100 (which may be reflected light from the wafer surface) is reflected by the reflective component 305, changing the light path to the horizontal direction. This light is then received by the edge image acquisition component 304 (or the photosensitive lens of this image acquisition component) on the horizontal side, allowing the edge image acquisition component 304 to acquire global image information of the upper surface of the calibration wafer 100. For example, refer to... Figure 6 The image shown is a schematic diagram of an image simulation obtained from image information acquired by the edge image acquisition component 304. Figure 6 It can be seen that, compared with the target position, the calibration wafer exhibits a more severe photoresist 200 over-removal phenomenon at 190°~290°.

[0053] In some embodiments, Figure 4The reflective component 305 is fixedly mounted on the left side of the rotating disk 301. A robotic arm picks up the calibration wafer 100 from the carrier disk 401 of the wafer washing device 400 and places the calibration wafer 100 on... Figure 4 The wafer is fixed on the rotating disk 301, and the fixing method may include, but is not limited to, vacuum adsorption, electrostatic adsorption, or mechanical gripper fixing. The rotating disk 301 drives the calibration wafer 100 to move horizontally below the reflective assembly 305, for example, by... Figure 4 The device moves horizontally from left to right, causing the right edge, center region, and left edge of the calibration wafer 100 to sequentially pass over the reflective component 305. This results in the global area of ​​the calibration wafer 100 being scanned by the reflective component 305. The edge image acquisition component 304 acquires the global image information of the upper surface of the calibration wafer 100, and outputs it after imaging processing. Figure 6 The illustrated diagram shows that the rotating disk 301 can move back and forth to obtain a more accurate and clearer global image.

[0054] In some embodiments, Figure 4 The rotating disk 301 does not move horizontally, while the reflective component 305 moves horizontally on the calibration wafer 100. The reflective component 305 moves horizontally, sequentially passing through the left edge, central region, and right edge of the calibration wafer 100, thus scanning the upper surface of the calibration wafer 100. The edge image acquisition component 304 acquires global image information of the upper surface of the calibration wafer 100. The reflective component 305 can move back and forth to obtain a more accurate and clear global image. After the image information of the upper surface of the calibration wafer 100 is acquired, the reflective component 305 moves to the starting position, such as to the left of the rotating disk 301.

[0055] In some embodiments, the reflective component 305 or the rotating disk 301 can be moved horizontally to position the origin mark 131 at the global scan start position, enabling horizontal movement of the reflective component 305 or the rotating disk 301 to perform a global image scan on the upper surface of the calibration wafer 100. When the origin mark 131 is obscured by the remaining photoresist, multiple positioning marks can be used for zeroing positioning, determining the positions of multiple positioning marks, and sequentially inferring the position of the origin mark for zeroing.

[0056] In some embodiments, the rotating disk 301 has moved to Figure 4 It stops moving at the target location, or returns after the reflective component 305 has finished scanning. Figure 4At the starting position on the left, the edge image acquisition component 304 has already acquired the edge region or the global image of the upper surface of the calibration wafer 100. The upper image acquisition component 302 is aligned with the edge of the front side of the calibration wafer 100, and the lower image acquisition component 303 is aligned with the edge of the back side of the calibration wafer 100. The rotating disk 301 rotates to move the calibration wafer 100, and the origin mark 131 on the calibration wafer 100 is positioned at the scan start position, below the upper image acquisition component 302. The upper image acquisition component 302 acquires the origin mark 131 and zeroes it. The rotating disk 301 rotates, and the upper image acquisition component 302, the lower image acquisition component 303, and the edge image acquisition component 304 begin acquiring image information. When the origin mark 131 is obscured by the remaining photoresist, multiple positioning marks can be used for zeroing positioning. The positions of multiple positioning marks are determined, and the position of the origin mark is sequentially inferred for zeroing.

[0057] Reference Figure 7 The image shown is a schematic diagram of an image simulation obtained from image information acquired by the upper image acquisition component 302. The upper image acquisition component 302 converts the image to form... Figure 7 A continuous linear image in the middle. Figure 7 In the process, compared to the target position, the calibration wafer 100 exhibits severe photoresist over-removal at angles between 190° and 290°. According to... Figure 6 and Figure 7 The monitoring images are used to inspect, calibrate, and adjust the carrier plate 401, robotic arm, and nozzle 402 of the wafer edge washing device 400; then the monitoring is repeated to determine whether the wafer edge washing device has been calibrated to the target process requirements.

[0058] For a calibration example of a wafer edge deposition apparatus, refer to the edge washing apparatus. When applying edge deposition, the center of the calibrated wafer is free of film, while the edge region has film. The deposition parameters are adjusted by monitoring the inner ring offset of the edge film.

[0059] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure.

Claims

1. A calibration wafer, characterized in that, include: Wafer body; Multiple graduated rings are sequentially fitted inward from the side of the wafer body; the center of each graduated ring coincides with the center of the wafer body. Multiple scale lines are evenly distributed along the circumference of the wafer body; each scale line points from the side of the wafer body to the center of the wafer body, and each scale line intersects with at least a portion of the scale rings; The origin is marked on one of the scale lines.

2. The calibration wafer according to claim 1, characterized in that, The graduated ring includes: Multiple nested first scale rings, wherein the first scale rings are a continuous structure; Multiple second scale rings are located between two adjacent first scale rings; the second scale rings include multiple scale segments spaced apart along the circumferential direction of the wafer body.

3. The calibration wafer according to claim 1, characterized in that, The wafer body has a notch on its side, and the origin mark is located on a scale line pointing from the notch to the center of the wafer body, and the origin mark does not coincide with the notch.

4. The calibration wafer according to claim 1, characterized in that, The calibration wafer also includes: Multiple positioning marks are located on the side of the wafer body, and one of the positioning marks is located on one of the scale lines; the multiple positioning marks and the origin mark are evenly distributed in the circumferential direction of the wafer body.

5. The calibration wafer according to claim 4, characterized in that, The line connecting one of the positioning marks and the origin mark passes through the center of the wafer body; the other positioning marks are symmetrically distributed with respect to the center of the wafer body.

6. The calibration wafer according to claim 1, characterized in that, The calibration wafer also includes: Multiple scales, one of which is located on a scale line, are evenly distributed along the circumference of the wafer body; the scales have multiple graduations arranged in the radial direction of the wafer body, and the graduations of the scales are used to characterize the distance relative to the center of the wafer body.

7. The calibration wafer according to claim 6, characterized in that, One of the scales is located on the extension of the line connecting the origin mark and the center of the wafer body.

8. The calibration wafer according to claim 6, characterized in that, The calibration wafer also includes: An angle marker is used to indicate the rotation angle of each of the scale lines relative to the center of the wafer body; the angle marker is located on one side of the scale line along the circumferential direction of the wafer body, or the angle marker is located on the scale line; A radius marker is located on one side of the scale along the circumferential direction of the wafer body; the radius marker is used to indicate the distance of each scale mark on the scale from the center of the wafer body.

9. The calibration wafer according to claim 6, characterized in that, The scale ring, the scale lines, the origin mark, and the scale are all embedded in the wafer body and exposed on the upper surface of the wafer body.

10. A wafer vision inspection device, characterized in that, For inspecting a calibrated wafer as described in any one of claims 1 to 9, the wafer visual inspection device comprises: A rotating disk is used to hold the calibration wafer; The upper image acquisition component, located above the rotating disk, is used to acquire image information of the upper surface of the edge region of the calibration wafer; The lower image acquisition component is located on the back side of the rotating disk and is used to acquire image information of the lower surface of the edge of the calibration wafer; A reflective component is located above the rotating disk; the reflective component reflects light from the upper surface of the calibration wafer horizontally; the reflective component and the rotating disk move relative to each other in the horizontal direction. An edge image acquisition component is located outside the edge of the rotating disk and is configured correspondingly to the reflection component; the edge image acquisition component acquires global image information of the upper surface of the calibration wafer by receiving the reflected light from the reflection component.

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