Tail gas treatment device and semiconductor process equipment

Abstract

Embodiments of the present application provide a tail gas treatment device and a semiconductor process equipment. The tail gas treatment device comprises a recovery device, a first exhaust passage, a second exhaust passage, a first heat exchange passage, a first control valve and a second control valve. The first exhaust passage and the second exhaust passage are both connected between a process chamber and a tail gas treatment module, and the recovery device is located in the second exhaust passage. The first control valve is used to control the on-off of the first exhaust passage, and the second control valve is used to control the on-off of the second exhaust passage. The first heat exchange passage is connected to a cooling device of the process chamber and is used to exchange heat with the recovery device. The above design reduces the overall energy consumption of the equipment, reduces energy waste, and improves energy utilization efficiency.

Description

Technical Field

[0001] This application belongs to the field of semiconductor technology, specifically relating to an exhaust gas treatment device and semiconductor process equipment. Background Technology

[0002] During the operation of semiconductor process equipment, nitrogen needs to be introduced into the process chamber at certain stages to maintain the stability of the chamber environment and ensure the cleanliness of the process chamber. At this time, the exhaust gas discharged from the process chamber has a high nitrogen content, and direct discharge will cause a large waste of nitrogen. Therefore, it is necessary to recycle and reuse nitrogen.

[0003] In semiconductor process equipment of related technologies, the waste gas discharged from the process chamber enters a recovery device. The recovery device performs a series of operations such as filtration, cooling, pressurization, and adsorption on the waste gas to obtain nitrogen with high purity, thereby improving the utilization rate of nitrogen. However, this semiconductor process equipment has high overall operating energy consumption in the nitrogen recovery process, resulting in huge energy waste. Utility Model Content

[0004] This application aims to provide an exhaust gas treatment device and semiconductor process equipment, which at least solves the problem of high energy consumption in the nitrogen recovery process of semiconductor process equipment in related technologies.

[0005] To solve the above-mentioned technical problems, this application is implemented as follows: This application provides an exhaust gas treatment device, including: a recovery device, a first exhaust passage, a second exhaust passage, a first heat exchange passage, a first control valve, and a second control valve; Both the first exhaust passage and the second exhaust passage are connected between the process chamber and the exhaust gas treatment module, and the recovery device is located in the second exhaust passage; The first control valve is used to control the opening and closing of the first exhaust passage, and the second control valve is used to control the opening and closing of the second exhaust passage. The first heat exchange channel is connected to the cooling device of the process chamber and is used for heat exchange with the recovery device.

[0006] Optionally, a flow regulating valve is provided on the first heat exchange channel; the recovery device includes an open state and a closed state; when the recovery device is in the open state, the flow regulating valve has a first opening degree; when the recovery device is in the closed state, the flow regulating valve has a second opening degree, wherein the first opening degree is greater than the second opening degree.

[0007] Optionally, the exhaust gas treatment device further includes a temperature sensor and a control module; a flow regulating valve is provided on the first heat exchange channel; the recovery device includes a heat exchanger, which is connected to the first heat exchange channel, and the first heat exchange channel exchanges heat with the heat exchanger; the temperature sensor is used to collect the gas temperature of the second exhaust channel after heat exchange by the heat exchanger; the control module is communicatively connected to the flow regulating valve and the temperature sensor; the control module is used to control the opening degree of the flow regulating valve according to the gas temperature.

[0008] Optionally, when the process chamber is in a first working state, the second control valve is open and the first control valve is closed; The process chamber is in a second working state, with the first control valve open and the second control valve closed; Wherein, the inert gas concentration of the gas discharged from the process chamber in the first working state is greater than the inert gas concentration of the gas discharged from the process chamber in the second working state.

[0009] Optionally, the exhaust gas treatment device further includes a third exhaust passage, which connects the process chamber and the exhaust gas treatment module; The recovery device also includes a desorption gas circuit; the third exhaust channel is used for heat exchange with the desorption gas circuit.

[0010] Optionally, the recovery device includes an adsorption module, which includes multiple adsorption units. One end of the desorption gas circuit is connected to the gas recovery exhaust port of the adsorption module, and the other end is connected to the desorption gas inlet of at least one of the adsorption units of the adsorption module.

[0011] Optionally, the exhaust gas treatment device further includes a heat exchange chamber; at least a portion of the third exhaust passage and at least a portion of the desorption gas circuit are located within the heat exchange chamber.

[0012] Optionally, a third control valve is also provided on the third exhaust passage.

[0013] Optionally, the exhaust gas treatment device further includes a control module, which is communicatively connected to at least one of the first control valve, the second control valve, and the third control valve. The first control valve, the second control valve, and the third control valve are all pneumatic switching valves; The control module includes a controller, a valve island module, and a gas source module. The valve island module integrates a first solenoid valve, a second solenoid valve, and a third solenoid valve. The first solenoid valve, the second solenoid valve, and the third solenoid valve are all communicatively connected to the controller and connected to the gas source module. The first solenoid valve, the second solenoid valve, and the third solenoid valve are respectively used to receive control signals from the controller and control the opening or closing of the first control valve, the second control valve, and the third control valve.

[0014] Secondly, embodiments of this application also provide a semiconductor process apparatus, including a process chamber and an exhaust gas treatment device as described in any of the preceding claims.

[0015] In this embodiment, the exhaust gas treatment device includes a first exhaust channel, a second exhaust channel, a first heat exchange channel, a first control valve, and a second control valve. The first control valve controls the opening and closing of the first exhaust channel, and the second control valve controls the opening and closing of the second exhaust channel. Therefore, when exhaust gas recovery is required, the second control valve can open the second exhaust channel to allow the recovery device located in the second exhaust channel to recover the gas to be recovered from the exhaust gas. When exhaust gas recovery is not required, the first control valve can open the first exhaust channel, allowing the exhaust gas to directly enter the exhaust gas treatment module, avoiding energy waste caused by the long-term operation of the recovery device. Furthermore, by connecting the first heat exchange channel to the cooling device of the process chamber and exchanging heat with the recovery device, the recovery device can directly utilize the cooling device of the process chamber for cooling, eliminating the need for a separate cooling structure and reducing energy loss caused by a separate cooling structure. This embodiment reduces the overall energy consumption of the equipment, reduces energy waste, and improves energy utilization efficiency through the above design.

[0016] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0017] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which: Figure 1 This is a simplified structural diagram of semiconductor process equipment in related technologies; Figure 2 This is a simplified structural diagram of a recycling device in related technologies; Figure 3 This is a simplified structural diagram of the semiconductor process equipment in the embodiments of this application; Figure 4 This is a simplified structural diagram of the recycling device in the embodiments of this application; Figure 5This is a simplified structural diagram of the control system in the embodiments of this application; Figure 6 This is a flow chart of the high-temperature waste gas treatment device of the tail gas treatment device in the embodiment of this application.

[0018] Reference numerals: 100-Exhaust gas treatment device, 10-Recovery device, 11-Filtering unit, 12-Heat exchanger, 13-Pressure boosting unit, 14-Adsorption unit, 15-Desorption gas circuit, 151-First sub-channel, 152-Second sub-channel, 16-Heat exchange chamber, 17-Pressure stabilizing unit, 18-Heating unit, 20-First exhaust channel, 21-First control valve, 30-Second exhaust channel, 31-Second control valve, 40-First heat exchange channel, 41-Flow regulating valve, 42-Liquid inlet channel, 43-Liquid outlet channel, 50-Third exhaust channel, 51-Third control valve, 60-Control module, 61-Controller, 62-Valve island module, 63-Gas source module, 70-Temperature sensor, 80-Industrial computer, 90-Display, 200-Process chamber, 201-Cooling device, 202-Second heat exchange channel, 300-Exhaust gas treatment module. Detailed Implementation

[0019] The embodiments of this application will now be described in detail. Examples of these embodiments are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0020] The terms "first" and "second" in the specification and claims of this application may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise stated, "multiple" means two or more. Furthermore, "and / or" in the specification and claims indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0021] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0022] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0023] During the operation of semiconductor process equipment, inert gases need to be introduced into the process chamber during specific phases such as idle and purge states to maintain a stable chamber environment and ensure internal cleanliness. At this time, the exhaust gas discharged from the process chamber contains a high concentration of inert gases such as nitrogen. Direct discharge of these gases would result in significant waste, necessitating their recycling. In related semiconductor process equipment, the exhaust gas discharged from the process chamber enters a recovery device. This device performs a series of operations, including filtration, cooling, pressurization, and adsorption, to obtain highly purified inert gas, thus improving the utilization rate of the inert gas.

[0024] like Figure 1 The diagram shown is a simplified structural diagram of semiconductor process equipment in related technologies, in which... Figure 1In the semiconductor process equipment shown, special gases, such as deposition gases, etching gases, and inert gases, need to be introduced into the process chamber 200 for thin film deposition, circuit formation, etc. The high-temperature waste gas discharged from the process chamber 200 directly enters the recovery device 10 for recycling. For example, after recycling, high-purity inert gases such as nitrogen and other waste gases are obtained. The nitrogen can be supplied to nitrogen users, while the waste gas enters the tail gas treatment module 300 for centralized discharge. However, since high-purity inert gases are only used in specific stages of the semiconductor process equipment's operation, and the high-temperature waste gas discharged from the process chamber 200 must pass through the recovery device 10, even high-temperature waste gas discharged from the process chamber 200 during process stages where inert gas is not required must pass through the recovery device 10. In these non-specific stages, the recovery device 10 is actually idling, increasing the equipment's operating energy consumption. Figure 2 The diagram shown is a simplified structural diagram of a recycling device 10 in a semiconductor process equipment in the related art. Among them, in... Figure 2 In the recovery device 10 shown, the heat exchanger 12 is a separately installed cooling structure used to cool the high-temperature exhaust gas after filtering solid particulate impurities. In practical applications, since nitrogen is only introduced into the process chamber 200 at specific stages, the high-temperature exhaust gas discharged from the process chamber 200 contains a large amount of nitrogen. Therefore, the recovery device 10 needs to recover the high-temperature exhaust gas. However, in non-specific stages where nitrogen is not introduced, the high-temperature nitrogen does not need to be recovered, meaning the heat exchanger 12 does not need to cool these high-temperature exhaust gases. However, to ensure the cooling efficiency of the high-temperature exhaust gas during specific stages, the heat exchanger 12 needs to remain in the start-up state to ensure the recovery device 10 is in a pre-cooling state. This increases the overall energy consumption of the recovery device 10 during non-specific stages. All of these factors contribute to the high overall operating energy consumption of semiconductor process equipment, resulting in significant energy waste.

[0025] Therefore, this application provides an exhaust gas treatment device 100, and the exhaust gas treatment device 100 provided in this application will be further described below with reference to the accompanying drawings.

[0026] like Figure 3 , Figure 4As shown, the exhaust gas treatment device 100 in this embodiment may include: a recovery device 10, a first exhaust channel 20, a second exhaust channel 30, a first heat exchange channel 40, a first control valve 21, and a second control valve 31; the first exhaust channel 20 and the second exhaust channel 30 are both connected between the process chamber 200 and the exhaust gas treatment module 300, and the recovery device 10 is located in the second exhaust channel 30; the first control valve 21 is used to control the opening and closing of the first exhaust channel 20, and the second control valve 31 is used to control the opening and closing of the second exhaust channel 30; the first heat exchange channel 40 is connected to the cooling device 201 of the process chamber 200 and is used to exchange heat with the recovery device 10.

[0027] In this embodiment, the exhaust gas treatment device 100 includes a first exhaust channel 20, a second exhaust channel 30, a first heat exchange channel 40, a first control valve 21, and a second control valve 31. The first control valve 21 controls the opening and closing of the first exhaust channel 20, and the second control valve 31 controls the opening and closing of the second exhaust channel 30. Therefore, when exhaust gas needs to be recovered, the second control valve 31 can be used to open the second exhaust channel 30 so that the recovery device 10 located in the second exhaust channel 30 can recover the gas to be recovered from the exhaust gas. When exhaust gas recovery is not required, the first control valve 21 can be used to open the first exhaust channel 20 so that the exhaust gas can directly enter the exhaust gas treatment module 300, avoiding energy waste caused by the long-term operation of the recovery device 10. In addition, by connecting the first heat exchange channel 40 to the cooling device 201 of the process chamber 200 and exchanging heat with the recovery device 10, the recovery device 10 can directly use the cooling device 201 of the process chamber 200 to cool it, without the need to set up a separate cooling structure, thereby reducing the energy loss caused by setting up a separate cooling structure. The embodiments of this application reduce the overall energy consumption of the equipment, reduce energy waste, and improve energy utilization efficiency through the above design.

[0028] Compared to the exhaust gas recovery and treatment devices in semiconductor process equipment in related technologies, this application embodiment adds an exhaust channel after the process chamber 200, namely the first exhaust channel 20. The first exhaust channel 20 is directly connected between the process chamber 200 and the exhaust gas treatment module 300. Therefore, in the non-inert gas recovery stage, the flow of high-temperature exhaust gas in the second exhaust channel 30 can be cut off by closing the second control valve 31, and the first control valve 21 can be opened to allow the high-temperature exhaust gas to be discharged directly through the first exhaust channel 20 to the exhaust gas treatment module 300, thereby improving exhaust efficiency. In the inert gas recovery stage, the flow of high-temperature exhaust gas in the first exhaust channel 20 can be cut off by closing the first control valve 21, allowing the high-temperature exhaust gas to enter the second exhaust channel 30 and be recovered by the recovery device 10 on the second exhaust channel 30, thereby reducing the waste of inert gas. The above design, through the first control valve 21 and the second control valve 31, can control the flow direction of high-temperature exhaust gas between the first exhaust channel 20 and the second exhaust channel 30. The recovery device 10 can be activated only during the inert gas recovery stage and deactivated during other stages, thereby reducing energy waste caused by the constantly open recovery device 10 in semiconductor process equipment and saving energy. Furthermore, the exhaust gas treatment device 100 in this embodiment has a simple and reliable structure, is easy to implement, and requires minimal structural modification to the semiconductor process equipment when adding the first exhaust channel 20, the first control valve 21, and the second control valve 31. The control logic is clear, making it easy to modify and implement on existing semiconductor process equipment (especially etching machines) or integrate into new equipment designs.

[0029] Furthermore, in specific applications, the recovery device 10 is used to cool the high-temperature waste gas entering it in order to improve the subsequent adsorption efficiency. Specifically, the recovery device 10 is set on the second exhaust channel 30. After the high-temperature waste gas discharged from the process chamber 200 enters the second exhaust channel 30, it can enter the recovery device 10. The first heat exchange channel 40 of the tail gas treatment device 100 connects the recovery device 10 and the cooling device 201 of the process chamber 200. The first heat exchange channel 40 includes a liquid inlet channel 42 and a liquid outlet channel 43. The cooling medium in the cooling device 201 of the process chamber 200 enters the recovery device 10 through the liquid inlet channel 42, and the cooling medium in the recovery device 10 returns to the cooling device 201 of the process chamber 200 through the liquid outlet channel 43.

[0030] It should be noted that the cooling device 201 of the process chamber 200 is a separately installed component, filled with a cooling medium, and the temperature range of the cooling medium is -20℃ to 40℃. Figure 3 , Figure 4As shown, the cooling device 201 is connected to the process chamber 200 through the second heat exchange channel 202 to achieve the flow of the cooling medium, so as to accurately control the temperature of the core components in the process chamber 200 during the process stage and ensure the stability of process parameters. During the non-process stage, the cooling demand of the process chamber 200 is reduced, and the cooling device 201 is kept in a low-power operation state. In related technologies, when cooling the high-temperature waste gas to be recovered, a separate cooling structure is usually designed in the recovery device 10 as a cold source for cooling the high-temperature waste gas. During the operation of the semiconductor process equipment, this cooling structure needs to be turned on during the inert gas recovery stage to cool the high-temperature waste gas, so as to ensure that the waste gas temperature meets the adsorption conditions. During the non-inert gas recovery stage, this cooling structure also needs to be kept on so that the inside of the recovery device 10 is in a pre-cooled state, so that the high-temperature waste gas can be quickly cooled when it enters the recovery device 10, thereby improving the subsequent inert gas recovery efficiency. Thus, since this cooling structure needs to be kept on, the energy consumption of the recovery device 10 is increased.

[0031] This embodiment of the application connects the cooling device 201 and the recovery device 10 through a heat exchange channel. This allows the cooling medium in the cooling device 201 to flow into the recovery device 10 during the inert gas recovery stage, exchanging heat with the high-temperature waste gas inside the recovery device 10 and lowering its temperature to a suitable level for subsequent adsorption operations. Thus, by reusing the cooling device 201 in the process chamber 200, the cooling medium in the cooling device 201 can serve as a cold source to cool the high-temperature waste gas inside the recovery device 10. This avoids the need for a separate cooling structure inside the recovery device 10. Especially during non-inert gas recovery stages (e.g., when the process chamber 200 is in the process stage), it is not necessary to keep the additional cooling structure open. Simply introducing the cooling medium from the cooling device 201 in the process chamber 200 into the recovery device 10 through the heat exchange channel simplifies the structure of the recovery device 10 and reduces energy waste.

[0032] Optionally, a flow regulating valve 41 is provided on the first heat exchange channel 40; the recovery device 10 includes an open state and a closed state; when the recovery device 10 is in the open state, the flow regulating valve 41 has a first opening degree; when the recovery device 10 is in the closed state, the flow regulating valve 41 has a second opening degree, wherein the first opening degree is greater than the second opening degree.

[0033] like Figure 3 , Figure 4As shown in the embodiment of this application, the flow regulating valve 41 is disposed on the liquid inlet channel 42 of the first heat exchange channel 40. The flow regulating valve 41 is used to control the flow rate of the cooling medium entering the recovery device 10 from the cooling device 201 of the process chamber 200, thereby realizing differential control of the gas temperature in the second exhaust channel 30 between the open and closed states of the recovery device 10. Specifically, when the recovery device 10 is in the open state, the flow regulating valve 41 has a first opening degree. At this time, the high-temperature waste gas is discharged from the process chamber 200 into the second exhaust channel 30. The cooling medium in the cooling device 201 has a larger flow rate and faster velocity in the heat exchange channel, which allows the cooling medium to quickly exchange heat with the high-temperature waste gas, ensuring a rapid decrease in the gas temperature in the second exhaust channel 30 and improving the inert gas recovery efficiency. When the recovery device 10 is in the closed state, the flow regulating valve 41 has a second opening degree, which is smaller than the first opening degree. At this time, the high-temperature waste gas is discharged from the process chamber 200 into the first exhaust channel 20. The second exhaust channel 30 contains only a small amount of waste gas or no waste gas. The cooling medium in the cooling device 201 enters the recovery device 10 with a smaller flow rate and lower velocity under the control of the flow regulating valve 41, keeping the recovery device 10 in a pre-cooled state. This ensures that when the recovery device 10 switches to the open state, it can quickly cool down the high-temperature waste gas entering the second exhaust channel 30, improving the cooling efficiency of the recovery device 10 when it switches to the open state. Alternatively, in some other embodiments, the flow regulating valve 41 may also be disposed on the liquid outlet channel 43. This application does not limit the specific location of the flow regulating valve 41 in the heat exchange channel.

[0034] Optionally, the recovery device 10 includes a heat exchanger 12, which is connected to a first heat exchange channel 40. Cooling medium can circulate within the heat exchanger 12 and the cooling device 201 of the process chamber 200 through the first heat exchange channel 40. For example, the heat exchanger 12 may include a housing with a mutually separated flow channel cavity and exhaust gas cavity inside. The exhaust gas cavity is connected to a second exhaust channel 30 for the passage of high-temperature exhaust gas, while the flow channel cavity is used for the flow of cooling medium. The cooling medium in the cooling device 201 enters the flow channel cavity through the first heat exchange channel 40 to exchange heat with the high-temperature exhaust gas in the exhaust gas cavity and reduce its temperature.

[0035] Furthermore, the heat exchanger 12 also includes a temperature sensor 70, which is used to collect the gas temperature in the second exhaust channel 30 after heat exchange by the heat exchanger 12. Specifically, the exhaust gas chamber in the heat exchanger 12 includes an inlet and an outlet, both of which are connected to the second exhaust channel 30. The temperature sensor 70 is connected to the outlet. By setting the temperature sensor 70 at the outlet, the temperature of the gas flowing into the second exhaust channel 30 after heat exchange by the heat exchanger 12 can be collected and monitored in real time, thereby providing a basis for adjusting the opening of the flow regulating valve 41. In particular, the opening of the flow regulating valve 41 is controlled in real time based on the temperature signal collected by the temperature sensor 70 to regulate the flow rate of the cooling medium entering the heat exchanger 12 through the first heat exchange channel 40, thereby ensuring the stability of the outlet temperature of the gas chamber of the heat exchanger 12 and ensuring the stability and reliability of the subsequent exhaust gas adsorption effect.

[0036] Furthermore, the exhaust gas treatment device 100 also includes a control module 60, which is communicatively connected to the flow regulating valve 41 and the temperature sensor 70. The control module 60 is used to control the opening degree of the flow regulating valve 41 according to the gas temperature. In this embodiment, by setting the control module 60 to communicate with the flow regulating valve 41 and the temperature sensor 70, the gas temperature control at the outlet of the heat exchanger 12 is automated, simplifying the operation process and ensuring control accuracy.

[0037] In practical applications, temperature sensor 70 can collect the gas temperature at the outlet of heat exchanger 12 and transmit the temperature signal to control module 60. Control module 60 then controls the opening of flow regulating valve 41 based on the received temperature signal. Technicians can set a preset temperature range, and control module 60 can automatically adjust the opening of flow regulating valve 41 based on the temperature signal from temperature sensor 70 to regulate the flow rate of cooling medium in the first liquid inlet channel 42, thereby regulating the temperature of the cooling medium inside heat exchanger 12. For example, when the temperature signal is lower than the preset temperature range, the control module 60 can control the opening of the temperature regulating valve to decrease, thereby reducing the flow rate and velocity of the cooling medium in the first heat exchange channel 40, thus slowing down the heat exchange between the cooling medium and the high-temperature exhaust gas in the heat exchanger 12, increasing the gas temperature at the outlet, and bringing it back to the preset temperature range. Conversely, when the temperature signal is higher than the preset temperature range, it means that the gas temperature at the outlet of the heat exchanger 12 is too high. At this time, the control module 60 can control the opening of the temperature regulating valve to increase, thereby increasing the flow rate and velocity of the cooling medium in the first heat exchange channel 40, accelerating the heat exchange between the cooling medium and the high-temperature exhaust gas in the heat exchanger 12, reducing the gas temperature at the outlet, and thus keeping it within the preset temperature range, so as to ensure that the exhaust gas in the second exhaust channel 30 meets the gas temperature conditions required for the subsequent adsorption stage.

[0038] Specifically, the recovery device 10 includes a filter unit 11, a heat exchanger 12, a pressurization unit 13, and an adsorption module sequentially arranged on the second exhaust channel 30. The high-temperature exhaust gas discharged from the process chamber 200 enters the second exhaust channel 30 and first passes through the filter unit 11 to remove solid particulate impurities such as dust and metal shavings. Then it enters the heat exchanger 12, where the high-temperature exhaust gas exchanges heat with the cooling medium in the first heat exchange channel 40, reducing its temperature to a preset temperature. This enhances the adsorption capacity of the adsorbent in the adsorption unit 14 of the subsequent adsorption module for impurities and prevents the high temperature from causing a decrease in the performance of the adsorbent in the adsorption unit 14. The cooled exhaust gas then enters the pressurization unit 13; the pressurization unit 13 compresses... Inert gas is used to increase the system pressure, thereby enhancing the adsorption capacity of the adsorbent in the subsequent adsorption unit 14 for oxygen. The pressurized waste gas then continues to enter the adsorption unit 14 for adsorption and recovery treatment. In this embodiment, the adsorption module includes two adsorption units 14, each filled with an adsorbent such as carbon molecular sieve. The adsorption unit 14 utilizes the preferential adsorption characteristics of carbon molecular sieve for oxygen, combined with temperature changes, to complete the adsorption and regeneration cycle, thus continuously outputting high-purity inert gas. The two adsorption units 14 operate alternately; while one adsorption unit 14 is adsorbing, the other adsorption unit 14 is regenerating. In practical applications, the alternating operation of the two adsorption units 14 can be controlled by a PLC controller 61 to achieve continuous gas supply. It should be noted that the above adsorption structure can directly adopt the existing dual-tower adsorption structure, which will not be elaborated upon in this application.

[0039] Optionally, when the process chamber 200 is in the first working state, the second control valve 31 is open and the first control valve 21 is closed; when the process chamber 200 is in the second working state, the first control valve 21 is open and the second control valve 31 is closed; wherein, the inert gas concentration of the gas discharged from the process chamber 200 in the first working state is greater than the inert gas concentration of the gas discharged from the process chamber 200 in the second working state.

[0040] In this embodiment, by designing the opening degrees of the first control valve 21 and the second control valve 31 under different working states of the process chamber 200, the overall energy utilization efficiency of the exhaust gas treatment device 100 can be improved and energy consumption reduced. For example, the first working state of the process chamber 200 can be a standby state or a purging state. At this time, the process chamber 200 is not undergoing a process, and inert gases such as nitrogen need to be introduced into the process chamber 200 to maintain the stability of the internal environment and ensure the cleanliness of the process chamber 200. The concentration of inert gases in the process chamber 200 is high, and correspondingly, the concentration of inert gases in the exhaust gas from the process chamber 200 is also high. Directly discharging into the exhaust gas treatment module 300 would cause a large amount of waste of inert gases. Therefore, at this time, the first control valve 21 can be closed to prevent the gas from directly entering the exhaust gas treatment module 300, while the second control valve 31 is opened so that the gas discharged from the process chamber 200 can enter the second exhaust channel 30 and be recovered by the recovery device 10 located on the second exhaust channel 30, thereby reducing the waste of inert gases. The second working state of the process chamber 200 can be the process state, in which various process operations are performed inside the process chamber 200, such as thin film deposition, etching, doping, plasma treatment, etc. At this time, it is not necessary to introduce a large amount of inert gas into the chamber. The concentration of inert gas in the gas discharged from the process chamber 200 is low. Therefore, the first control valve 21 can be opened while the second control valve 31 and the recovery device 10 are closed. This allows the gas discharged from the process chamber 200 to be discharged directly from the first exhaust channel 20 to the exhaust gas treatment module 300. Since the recovery device 10 can be closed during this process, the energy loss caused by the recovery device 10 being constantly open can be reduced, thus reducing energy consumption.

[0041] Optionally, the exhaust gas treatment device 100 further includes a third exhaust channel 50, which is connected between the process chamber 200 and the exhaust gas treatment module 300; the recovery device 10 further includes a desorption gas circuit 15, and the third exhaust channel 50 is used to exchange heat with the desorption gas circuit 15.

[0042] It should be noted that the recovery device 10 in this embodiment utilizes the preferential adsorption characteristics of oxygen by adsorbents such as carbon molecular sieves in the adsorption unit 14, combined with pressure changes, to adsorb impurities such as oxygen, thus outputting high-purity inert gas. Then, temperature changes are used to desorb the impurities adsorbed by the adsorbent. The heated gas in the desorption gas circuit 15 enters the adsorption unit 14, allowing the adsorbent in the adsorption unit 14 to complete desorption under high-temperature conditions, achieving adsorption regeneration and recycling, enabling repeated adsorption operations. More specifically, after a period of operation, the adsorbent filled inside the adsorption unit 14 adsorbs a large amount of oxygen, moisture, and other impurities on its surface and in its pores, leading to adsorption capacity saturation and loss of adsorption capacity, thus failing to effectively separate inert gas and oxygen. To ensure adsorbent performance and inert gas recovery efficiency, the adsorbent needs to be regenerated, i.e., the adsorption process is reversed, expelling impurities adsorbed on the surface and in the pores of the adsorbent and restoring its adsorption capacity. In this embodiment, the adsorption capacity of the adsorbent decreases with increasing temperature. Heat is exchanged between the third exhaust channel 50 and the desorption gas circuit 15, and the gas within the desorption gas circuit 15 heats the adsorbent, reducing its adsorption capacity and causing impurities previously adsorbed on the surface and in the pores of the adsorbent to be desorbed. The two adsorption units 14 operate alternately; while one adsorption unit 14 is adsorbing, the other adsorption unit 14 is regenerating.

[0043] In this embodiment, by providing a third exhaust channel 50 in the exhaust gas treatment device 100, the third exhaust channel 50 exchanges heat with the desorption gas circuit 15 of the recovery device 10. In effect, a portion of the high-temperature waste gas discharged from the process chamber 200 is used to heat the gas within the desorption gas circuit 15. Compared to Figure 2 In the related technologies shown, the recovery device is equipped with a separate heating unit 18 to heat the gas in the desorption gas circuit 15. In this embodiment, the high-temperature waste gas generated by the process chamber 200 itself is used to exchange heat with the desorption gas circuit 15, thereby reducing the overall energy consumption of the tail gas treatment device 100. Since the process chamber 200 can continuously output waste gas, it can be ensured that the desorption gas circuit 15 is kept in a preheated state when the process chamber 200 is in the second working state and the second exhaust channel 30 is disconnected. In this way, when the process chamber 200 switches to the first working state and the recovery device 10 is turned on, the desorption speed of the adsorption unit 14 is increased, thereby ensuring the desorption efficiency and the inert gas recovery efficiency.

[0044] It should be noted that the third exhaust channel 50 is connected to both the process chamber 200 and the exhaust gas treatment module 300. The third exhaust channel 50 can be opened in both the first and second working states of the process chamber 200. In the first working state, the process chamber 200 can exchange heat with the desorption gas circuit 15 to provide heat for the desorption operation of the adsorption unit 14. In the second working state, the process chamber 200 can be used together with the first exhaust channel 20 to discharge high-temperature waste gas and preheat the desorption gas circuit 15.

[0045] Optionally, the recovery device 10 includes an adsorption module, which comprises multiple adsorption units 14. One end of the desorption gas circuit 15 is connected to the gas recovery exhaust port of the adsorption module, and the other end is connected to the desorption gas inlet of at least one adsorption unit 14 of the adsorption module. By connecting one end of the desorption gas circuit 15 to the gas recovery exhaust port of the adsorption module and the other end to the desorption gas inlet of at least one adsorption unit 14 of the adsorption module, the inert gas recovered by the adsorption unit 14 can be used as the gas source inside the desorption gas circuit 15. This ensures the purity of the gas inside the adsorption unit 14 and avoids the increased structural complexity caused by adding a separate desorption gas source, thus simplifying the structure of the exhaust gas recovery device 10.

[0046] Specifically, in this embodiment, after the adsorption module is connected to the pressurization unit 13, the high-pressure exhaust gas passes through the adsorption unit 14 of the adsorption module to obtain high-purity inert gas. Since one end of the desorption gas circuit 15 is connected to the gas recovery exhaust port of the adsorption module, a portion of the high-purity inert gas discharged from the adsorption module enters the desorption gas circuit 15 and then exchanges heat with the high-temperature exhaust gas in the third exhaust channel 50. The temperature of the high-purity inert gas in the desorption gas circuit 15 is increased, and then it returns to the desorption gas inlet of the adsorption unit 14 through the other end of the desorption gas circuit 15. This portion of high-temperature and high-purity inert gas can increase the temperature of the saturated adsorption column in the adsorption unit 14, regenerating the adsorbent filled inside and restoring the adsorption performance of the adsorbent.

[0047] The desorption gas circuit 15 may include a first sub-channel 151 and a second sub-channel 152 arranged in parallel. The recovery device 10 also includes a pressure stabilizing unit 17 connected to the second sub-channel 152. The desorption gas circuit 15 includes the first sub-channel 151, and / or the desorption gas circuit 15 includes the second sub-channel 152 and the pressure stabilizing unit 17.

[0048] like Figure 4As shown, in some optional embodiments of this application, the exhaust gas treatment device 100 includes a heat exchange chamber 16, at least a portion of a third exhaust channel 50, and at least a portion of a desorption gas circuit 15 located within the heat exchange chamber 16. The third exhaust channel 50 is at least partially located within the heat exchange chamber 16, allowing heat to accumulate within the heat exchange chamber 16, thereby maintaining the temperature within the heat exchange chamber 16 and heating the gas within the desorption gas circuit 15 located within the heat exchange chamber 16, resulting in better heating performance.

[0049] Optionally, the third exhaust channel 50 within the heat exchange chamber 16 is arranged in a bent shape. With the capacity of the heat exchange chamber 16 remaining constant, the bent channel design lengthens the flow path of the high-temperature exhaust gas within the heat exchange chamber 16, correspondingly increasing the residence time of the high-temperature exhaust gas within the heat exchange chamber 16. This allows the high-temperature exhaust gas more sufficient time to exchange heat with the desorption gas circuit 15, improving heat transfer efficiency and enhancing the heating effect on the gas within the desorption gas circuit 15. For example, the third exhaust channel 50 can be arranged in a spiral or folded shape.

[0050] Optionally, a third control valve 51 is also provided on the third exhaust passage 50, wherein the third control valve 51 is a switching valve or a regulating valve.

[0051] When the third control valve 51 is a switch valve, it can control the opening or closing of the third exhaust channel 50. By keeping the third control valve 51 in the open state, the exhaust gas in the third exhaust channel 50 is in a continuous flow state; or, the third control valve 51 can be opened when the process chamber 200 is in the first working state, and the gas in the desorption gas circuit 15 can be heated by the high-temperature exhaust gas in the third exhaust channel 50, and the third control valve 51 can be closed when the process chamber 200 is in the second working state, so that the high-temperature exhaust gas is directly discharged from the first exhaust channel 20. In practical applications, the choice can be flexible.

[0052] When the third control valve 51 is a regulating valve, its opening degree can be controlled, thereby controlling the flow rate of high-temperature waste gas in the third exhaust channel 50. It should be noted that when the process chamber 200 is in its first working state, the recovery device 10 is in operation, and the second exhaust channel 30 is open. The high-temperature waste gas in the process chamber 200 enters the second exhaust channel 30 and completes the inert gas recovery process through the recovery device 10. Since the third exhaust channel 50 is also connected to the process chamber 200, it is necessary to control the flow rate of the high-temperature waste gas discharged from the process chamber 200 into the third exhaust channel 50 to ensure that the high-temperature waste gas mainly enters the second exhaust channel 30 for recovery through the recovery device 10, thereby improving the inert gas recovery efficiency. In practical applications, the size relationship between the third exhaust channel 50 and the second exhaust channel 30 can be controlled, and the third control valve 51 can be set as a regulating valve. This not only prevents a large amount of waste gas from entering the third exhaust channel 50 and ensures the efficiency of inert gas recovery, but also allows for flexible adjustment of the flow rate in the third exhaust channel 50 according to the regeneration effect of the adsorbent in the adsorption column, so as to adjust the heating effect on the gas in the desorption gas circuit 15.

[0053] like Figure 3 , Figure 5 As shown, the exhaust gas treatment device 100 also includes a control module 60. The control module 60 is communicatively connected to at least one of the first control valve 21, the second control valve 31, and the third control valve 51, and is used to control their operating states. It can be understood that the control module 60 controls the operating states of the first control valve 21, the second control valve 31, and the third control valve 51 to form the following... Figure 5 The automated control system shown realizes the automated control of the flow rate of high-temperature exhaust gas in the first exhaust channel 20, the second exhaust channel 30 and the third exhaust channel 50, which simplifies the operation process and ensures control accuracy.

[0054] The control module 60 can also be used to control the flow regulating valve 41 connected to the first liquid inlet channel 42, thereby improving the integration of the control system.

[0055] like Figure 5As shown, in this embodiment, the first control valve 21, the second control valve 31, and the third control valve 51 are all pneumatic switching valves. The control module 60 includes a controller 61, a valve island module 62, and an air source module 63. The valve island module 62 integrates a first solenoid valve, a second solenoid valve, and a third solenoid valve. The first, second, and third solenoid valves are all communicatively connected to the controller 61 and connected to the air source module 63. The first, second, and third solenoid valves are respectively used to receive control signals from the controller 61 and control the opening or closing of the first control valve 21, the second control valve 31, and the third control valve 51. Through the above control structure, the control accuracy, response speed, stability, integration, intelligence level, and maintenance convenience of the control system in this embodiment are significantly improved.

[0056] This embodiment of the application uses an external air source module 63 and a valve island module 62 to control the operating states of the first control valve 21, the second control valve 31, and the third control valve 51. The controller 61 in this embodiment can be a programmable logic controller (PLC) and is used as the main controller 61, possessing communication, DO output, and DI input functions. The air source module 63 is a dry compressed air source used to drive the pneumatic diaphragm valve to open. The first control valve 21, the second control valve 31, and the third control valve 51 are all pneumatic switching valves. The valve island is a combination integrating the first, second, and third solenoid valves, all of which are connected to the air source module 63. The control process is completed through the PLC, with each solenoid valve corresponding to a PLC switch output point (DO). When the DO point outputs a control signal, the corresponding output point indicator light on the DO module illuminates, energizing and opening the solenoid valve. At this time, the air path controlled by the solenoid valve is connected, driving the corresponding pneumatic diaphragm valve to open. It should be noted that the specific structures of the PLC, valve island module 62, air source module 63, and pneumatic diaphragm valve are existing technologies and will not be described in detail in this application.

[0057] The semiconductor process equipment in this embodiment also includes an industrial control computer 80 and a display 90. Specifically, the PLC communicates with the industrial control computer 80 and the components of the recovery device 10, such as the filter unit 11, heat exchanger 12, pressurization unit 13, adsorption module, and voltage stabilization unit 17, via Ethernet. It collects the real-time operating status and parameters of the semiconductor process equipment and controls the opening status of the recovery device 10 and the operating status of its components, such as controlling the flow rate and temperature of the cooling medium in the heat exchanger 12, the pressure of the pressurization unit 13, and the switching between adsorption and regeneration states of the dual adsorption columns in the adsorption unit 14. The display 90 is a touch screen display used to receive signals from the PLC and display the operating status of various valves in the equipment for technical personnel.

[0058] The following is combined with Figure 6 Taking the recovery of nitrogen from high-temperature waste gas by the exhaust gas treatment device 100 as an example, the nitrogen recovery process of the exhaust gas treatment device 100 in this application embodiment will be further explained: First, determine whether the initialization of process chamber 200 is complete; If initialization is complete, determine whether the device is in standby (idle) state; If in idle state, nitrogen is continuously introduced into process chamber 200. At this time, recovery device 10 is started, the preset temperature range of temperature sensor 70 at the outlet of heat exchanger 12 is set, the second control valve 31 and recovery device 10 are opened, the first control valve 21 is closed, and the high temperature exhaust gas enters the second exhaust channel 30 and is recovered and reused by the recovery device 10 on the second exhaust channel 30. If the process chamber 200 is not in the idle state, it is determined that the process chamber 200 is in the process state. Then, the first control valve 21 is opened, and the second control valve 31 and the recovery device 10 are closed. The flow regulating valve 41 on the first heat exchange channel 40 of the cooling device 201 is set to a small opening, such as 20%, so that the high-temperature exhaust gas discharged from the process chamber 200 flows directly into the tail gas treatment module 300 through the first exhaust channel 20 and enters the field exhaust system. If the chamber has not been initialized, determine whether the chamber is in the purge state; If the chamber is in a purge state, start the nitrogen purging process. At this time, nitrogen is introduced in stages, and the recovery device 10 is started. Set the preset temperature range of the temperature sensor 70 at the outlet of the heat exchanger 12, open the first control valve 21, close the third control valve 51, and let the high-temperature waste gas flow into the recovery device 10 for recycling and reuse. If the chamber is not in the purge state, open the third control valve 51, close the first control valve 21, close the recovery device 10, and set the opening of the flow regulating valve 41 on the first liquid inlet channel 42 of the cooling device 201 to 20%, so that the high-temperature exhaust gas discharged from the process chamber 200 flows directly into the tail gas treatment module 300 and enters the field ventilation system.

[0059] Through the above-mentioned high-temperature exhaust gas treatment control process, the high-temperature exhaust gas emitted in the idle and purge states can be selectively recovered by flexibly opening the second exhaust channel 30 and the recovery device 10 (where the nitrogen concentration in the high-temperature exhaust gas in the above two states is greater than the nitrogen concentration in the process state). This avoids opening the recovery device 10 when the process state emits low-concentration or polluted exhaust gas, and reduces energy waste caused by keeping the recovery device 10 open for a long time.

[0060] In summary, the exhaust gas treatment device 100 provided in this application embodiment may include at least the following advantages: In this embodiment, the exhaust gas treatment device 100 includes a first exhaust channel 20, a second exhaust channel 30, a first heat exchange channel 40, a first control valve 21, and a second control valve 31. The first control valve 21 controls the opening and closing of the first exhaust channel 20, and the second control valve 31 controls the opening and closing of the second exhaust channel 30. Therefore, when exhaust gas needs to be recovered, the second control valve 31 can be used to open the second exhaust channel 30 so that the recovery device 10 located in the second exhaust channel 30 can recover the gas to be recovered from the exhaust gas. When exhaust gas recovery is not required, the first control valve 21 can be used to open the first exhaust channel 20 so that the exhaust gas can directly enter the exhaust gas treatment module 300, avoiding energy waste caused by the long-term operation of the recovery device 10. In addition, by connecting the first heat exchange channel 40 to the cooling device 201 of the process chamber 200 and exchanging heat with the recovery device 10, the recovery device 10 can directly use the cooling device 201 of the process chamber 200 to cool it, without the need to set up a separate cooling structure, thereby reducing the energy loss caused by setting up a separate cooling structure. The embodiments of this application reduce the overall energy consumption of the equipment, reduce energy waste, and improve energy utilization efficiency through the above design.

[0061] This application also provides a semiconductor process apparatus, which includes a process chamber 200 and an exhaust gas treatment device 100 as described above.

[0062] The process chamber 200 includes a first working state and a second working state. In the second working state, the process chamber 200 is used for various process operations, such as thin film deposition, etching, doping, and plasma treatment. In the first working state, an inert gas, such as nitrogen, is introduced into the process chamber 200 to maintain a stable chamber environment and ensure the cleanliness of the process chamber 200 during non-process stages. In this embodiment, the first exhaust channel 20, the second exhaust channel 30, and the third exhaust channel 50 are all connected between the process chamber 200 and the exhaust gas treatment module 300. The exhaust path of the process chamber 200 is related to the concentration of the inert gas inside it, reducing unnecessary energy waste and helping to reduce the overall energy consumption of the equipment.

[0063] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0064] Although embodiments of this application have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of this application, the scope of which is defined by the claims and their equivalents.

Claims

1. A tail gas treatment device, characterized in that, include: Recovery device, first exhaust passage, second exhaust passage, first heat exchange passage, first control valve and second control valve; Both the first exhaust passage and the second exhaust passage are connected between the process chamber and the exhaust gas treatment module, and the recovery device is located in the second exhaust passage; The first control valve is used to control the opening and closing of the first exhaust passage, and the second control valve is used to control the opening and closing of the second exhaust passage. The first heat exchange channel is connected to the cooling device of the process chamber and is used for heat exchange with the recovery device.

2. The exhaust gas treatment device according to claim 1, characterized in that, A flow regulating valve is provided on the first heat exchange channel; the recovery device includes an open state and a closed state; when the recovery device is in the open state, the flow regulating valve has a first opening degree; when the recovery device is in the closed state, the flow regulating valve has a second opening degree, wherein the first opening degree is greater than the second opening degree.

3. The exhaust gas treatment device according to claim 1, characterized in that, It also includes a temperature sensor and a control module. A flow regulating valve is provided on the first heat exchange channel. The recovery device includes a heat exchanger, which is connected to the first heat exchange channel, and the first heat exchange channel exchanges heat with the heat exchanger. The temperature sensor is used to collect the gas temperature of the second exhaust channel after heat exchange by the heat exchanger. The control module is communicatively connected to the flow regulating valve and the temperature sensor. The control module is used to control the opening degree of the flow regulating valve according to the gas temperature.

4. The exhaust gas treatment device according to claim 1, characterized in that, When the process chamber is in a first working state, the second control valve is open and the first control valve is closed; The process chamber is in a second working state, with the first control valve open and the second control valve closed; Wherein, the inert gas concentration of the gas discharged from the process chamber in the first working state is greater than the inert gas concentration of the gas discharged from the process chamber in the second working state.

5. The exhaust gas treatment device according to claim 1, characterized in that, It also includes a third exhaust channel, which connects the process chamber and the exhaust gas treatment module; The recovery device also includes a desorption gas circuit; the third exhaust channel is used for heat exchange with the desorption gas circuit.

6. The exhaust gas treatment device according to claim 5, characterized in that, The recovery device includes an adsorption module, which includes multiple adsorption units. One end of the desorption gas circuit is connected to the gas recovery exhaust port of the adsorption module, and the other end is connected to the desorption gas inlet of at least one of the adsorption units of the adsorption module.

7. The exhaust gas treatment device according to claim 5, characterized in that, It also includes a heat exchange chamber; at least a portion of the third exhaust channel and at least a portion of the desorption gas circuit are located within the heat exchange chamber.

8. The exhaust gas treatment device according to claim 5, characterized in that, A third control valve is also provided on the third exhaust passage.

9. The exhaust gas treatment device according to claim 8, characterized in that, It also includes a control module, which is communicatively connected to at least one of the first control valve, the second control valve, and the third control valve; The first control valve, the second control valve, and the third control valve are all pneumatic switching valves; The control module includes a controller, a valve island module, and a gas source module. The valve island module integrates a first solenoid valve, a second solenoid valve, and a third solenoid valve. The first solenoid valve, the second solenoid valve, and the third solenoid valve are all communicatively connected to the controller and connected to the gas source module. The first solenoid valve, the second solenoid valve, and the third solenoid valve are respectively used to receive control signals from the controller and control the opening or closing of the first control valve, the second control valve, and the third control valve.

10. A semiconductor process apparatus, characterized in that, It includes a process chamber and an exhaust gas treatment device as described in any one of claims 1-9.

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