Chemical vapor deposition reactor and spatial atomic layer deposition apparatus

Abstract

The utility model relates to a kind of reaction structure and space atomic layer deposition equipment of chemical vapor deposition, including reaction cavity main body, substrate table for bearing and conveying substrate are provided in reaction cavity main body;First isolation gas component is provided in the outside of first precursor supply component and second precursor supply component, second isolation gas component is provided between first precursor supply component and second precursor supply component;First isolation gas component includes two inert gas curtains and the air extraction passage between two inert gas curtains.

Description

Technical Field

[0001] This utility model relates to the field of atomic layer deposition technology, and in particular to a reaction structure for chemical vapor deposition and a space atomic layer deposition device. Background Technology

[0002] In conventional atomic layer deposition (ALD), precursors are sequentially exposed to the substrate via short pulses, while maintaining physical separation through intermediate purge steps. Spatial ALD (SALD) is a variant of ALD in which precursors are continuously supplied at different locations and separated by inert gas regions or zones. Film growth is achieved by exposing the substrate to the locations containing the different precursors. Because the purge step is eliminated, the process becomes faster and precursor utilization is higher.

[0003] The shortcomings of existing technologies are as follows: like Figure 1 Traditional equipment often uses a single-layer inert gas curtain to separate different precursors, which is not strong enough. During operation, the precursors are prone to break through the gas curtain and mix at the interface, which will cause the two precursors to react and generate dust, contaminating the film source and reducing the film quality.

[0004] The existing evacuation process does not separate the two precursors, which leads to the mixing of the two precursors during evacuation, resulting in parasitic CVD (the precursors mix in the gas phase and undergo continuous reactions to form a non-self-limiting thin film deposition).

[0005] In view of the above-mentioned shortcomings, the designer actively researched and innovated in order to create a chemical vapor deposition reaction structure and a space atomic layer deposition device, making it more industrially valuable. Utility Model Content

[0006] To solve the above-mentioned technical problems, the purpose of this utility model is to provide a reaction structure for chemical vapor deposition.

[0007] To achieve the above objectives, the present invention adopts the following technical solution: One of the objectives of this utility model is: A chemical vapor deposition reaction structure includes a reaction chamber body, a substrate stage for supporting and transporting a substrate is disposed within the reaction chamber body, and along the substrate transport direction, the reaction chamber body is provided with: The first precursor supply assembly and the second precursor supply assembly are respectively disposed on both sides of the reaction chamber, with the nozzles facing the substrate conveying surface. The first precursor supply assembly is used to supply the first precursor to the substrate surface, and the second precursor supply assembly is used to supply the second precursor to the substrate surface. A first isolation gas assembly is provided on the outside of both the first precursor supply assembly and the second precursor supply assembly, and a second isolation gas assembly is provided between the first precursor supply assembly and the second precursor supply assembly. The first isolation gas assembly and the second isolation gas assembly have the same structure. The first isolation gas assembly includes two inert gas curtains and an extraction channel located between the two inert gas curtains. The two inert gas curtains and the extraction channel on their inner sides together form an isolation sealing ring for separating the first precursor and the second precursor.

[0008] As a further improvement of this utility model, the jetting direction of the two inert gas curtains constituting the isolation sealing ring is towards the surface of the substrate, and the suction port of the suction channel is towards the area between the two inert gas curtains.

[0009] As a further improvement of this utility model, the inert gas curtain is a curtain-like airflow formed by a slit nozzle, and the air intake of the air extraction channel is a slit structure parallel to the slit nozzle.

[0010] As a further improvement of this utility model, it also includes an exhaust separation assembly, which comprises: A first exhaust branch connected to the first precursor supply assembly; A second exhaust branch connected to the second fore-drive supply assembly; A main exhaust chamber is provided, which is equipped with an isolation plate to physically separate the airflow from the first exhaust branch and the second exhaust branch.

[0011] As a further improvement of this utility model, the isolation plate divides the main exhaust chamber into a first gas collection chamber and a second gas collection chamber that are not connected to each other. The first exhaust branch is connected to the first gas collection chamber, and the second exhaust branch is connected to the second gas collection chamber.

[0012] As a further improvement of this utility model, at least one air inlet is provided in the total exhaust chamber on both sides of the isolation plate, and the first air inlet chamber and the second air inlet chamber are respectively connected to the corresponding air inlet.

[0013] As a further improvement of this utility model, the isolation plate has a serpentine distribution structure.

[0014] The second objective of this utility model is: A space atomic layer deposition apparatus that integrates a chemical vapor deposition reaction structure as described above.

[0015] By means of the above solution, this utility model has at least the following advantages: This invention uses two inert gas curtains and their inner exhaust channels to form an isolation and sealing ring, which can greatly reduce the mixing phenomenon between the two precursors, significantly reduce parasitic CVD, and improve film quality.

[0016] This invention separates the exhaust of the two precursors above the gas box (by adding an isolation plate), thus preventing the precursors from reacting at the top to generate dust that falls below and clogs the small holes and contaminates the film source.

[0017] The above description is only an overview of the technical solution of this utility model. In order to better understand the technical means of this utility model and to implement it in accordance with the contents of the specification, the following are the preferred embodiments of this utility model and are described in detail with reference to the accompanying drawings. Attached Figure Description

[0018] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this utility model and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram illustrating the principle of existing technology; Figure 2 This is a schematic diagram illustrating the principle of this utility model; Figure 3 This is a schematic diagram of the exhaust separation component of this utility model.

[0020] The meanings of the labels in the figures are as follows.

[0021] First precursor supply assembly 1, second precursor supply assembly 2, first isolation gas assembly 3, second isolation gas assembly 4, exhaust separation assembly 5, isolation plate 6, and gas inlet 7. Detailed Implementation

[0022] The specific embodiments of this utility model will be described in further detail below with reference to the accompanying drawings and examples. The following examples are used to illustrate this utility model, but are not intended to limit its scope.

[0023] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.

[0024] The first embodiment of this utility model: like Figures 2-3 As shown, a chemical vapor deposition reaction structure of this embodiment includes a reaction chamber body (forming a closed reaction space inside, providing a physical environment for thin film deposition), a substrate stage (disposed inside the reaction chamber body for carrying and transporting the substrate) for carrying and transporting the substrate, and along the substrate transport direction, the reaction chamber body is provided with: The first precursor supply assembly 1 and the second precursor supply assembly 2 are respectively disposed on both sides of the reaction chamber, with the nozzles facing the substrate conveying surface. The first precursor supply assembly 1 is used to supply the first precursor (such as Sn source) to the substrate surface, and the second precursor supply assembly 2 is used to supply the second precursor (such as H2O source) to the substrate surface.

[0025] A first isolation gas assembly 3 is provided on the outside of both the first precursor supply assembly 1 and the second precursor supply assembly 2, and a second isolation gas assembly 4 is provided between the first precursor supply assembly 1 and the second precursor supply assembly 2.

[0026] The first isolation gas assembly 3 and the second isolation gas assembly 4 have the same structure. The first isolation gas assembly 3 includes two inert gas curtains and an extraction channel located between the two inert gas curtains. The two inert gas curtains and the extraction channel on their inner sides together form an isolation sealing ring for separating the first precursor and the second precursor.

[0027] The inert gas curtain is a curtain-like airflow formed by a slit nozzle. The air extraction port of the extraction channel is a slit structure parallel to the slit nozzle. The jet direction of the two inert gas curtains that form the isolation sealing ring is towards the surface of the substrate, and the air extraction port of the extraction channel is towards the area between the two inert gas curtains.

[0028] It also includes an exhaust separation assembly 5, which includes: A first exhaust branch connected to the first precursor supply assembly 1; The second exhaust branch is connected to the second fore-drive supply assembly 2; A main exhaust chamber is provided, and an isolation plate 6 is provided inside. The isolation plate 6 has a serpentine distribution structure and is used to physically separate the airflow from the first exhaust branch and the second exhaust branch.

[0029] The isolation plate 6 divides the main exhaust chamber into a first gas collection chamber and a second gas collection chamber that are not connected to each other. The first exhaust branch is connected to the first gas collection chamber, and the second exhaust branch is connected to the second gas collection chamber.

[0030] At least one air inlet 7 is provided in the total exhaust chamber on both sides of the isolation plate 6, and the first air inlet chamber and the second air inlet chamber are respectively connected to the corresponding air inlet 7.

[0031] This embodiment is compared to Figure 1 The existing technology adds an additional isolation gas (i.e., an inert gas curtain) to form an isolation ring and adds an evacuation channel (i.e., an evacuation channel) between the two isolation gases, which can greatly reduce the mixing phenomenon between the two precursors, significantly reduce parasitic CVD, and improve film quality.

[0032] In addition, the exhaust separation assembly 5 separates the exhaust of the two precursors above the air box (by adding an isolation plate), preventing the precursors from reacting at the top to generate dust that falls down and clogs the small holes and contaminates the film source.

[0033] The second embodiment of this utility model: like Figures 2-3 As shown, a chemical vapor deposition reaction structure in this embodiment mainly includes: The main body of the reaction chamber forms a closed reaction space, providing a physical environment for thin film deposition and possessing good airtightness.

[0034] Substrate stage: Located inside the reaction chamber, it is used to support and transport the substrate.

[0035] Precursor supply components: The first precursor supply component 1 supplies tetrabutyltin (Sn source), and the second precursor supply component 2 supplies H2O source.

[0036] Both use array-type slit nozzles.

[0037] Isolation gas assembly: The inert gas in both the first isolation gas assembly 3 and the second isolation gas assembly 4 is nitrogen.

[0038] Exhaust separation component 5: The isolation plate 6 has a serpentine distribution structure and is used to physically separate the airflow from the first exhaust branch and the second exhaust branch.

[0039] The volume ratio of the first gas chamber to the second gas chamber is 1:1, and each chamber is equipped with two gas ports 7, which are connected to independent rotary vane vacuum pumps.

[0040] A brief description of the working process of this embodiment: Equipment startup and pretreatment: The first isolation gas assembly 3 and the second isolation gas assembly 4 are activated, and nitrogen gas is injected into the reaction chamber to form an isolation sealing ring.

[0041] Start the vacuum pump in the intermediate gas extraction channel and the vacuum pump in the exhaust separation component 5 to stabilize the pressure in the reaction chamber and the pressure in the total exhaust chamber. Monitor the pressure in the first precursor region and the second precursor region within the reaction chamber to ensure that the pressure difference is within a preset threshold.

[0042] Precursor supply and substrate transfer: The first precursor supply assembly 1 and the second precursor supply assembly 2 are turned on, and the Sn source and the H2O source are sprayed from the slit nozzle onto the substrate transfer surface of the substrate stage.

[0043] The roller conveyor mechanism of the substrate stage is activated to feed the silicon substrate into the reaction chamber at a preset speed.

[0044] Synergy between thin film deposition and isolation: The substrate passes sequentially through the H2O source region, the isolation sealing ring of the second isolation gas component 4, the Sn source region of the first precursor supply component 1, and the isolation sealing ring of the first isolation gas component 3.

[0045] During the deposition process, the H2O source and the Sn source undergo an atomic layer deposition reaction on the substrate surface to generate a tin oxide film; the double inert gas curtain of the isolation sealing ring blocks the diffusion of the precursor from both sides, and the middle gas extraction channel removes the precursor residue at the gas curtain interface in real time to avoid interface mixing.

[0046] Exhaust separation and equipment shutdown: The exhaust gas from the Sn source area enters the first gas collection chamber of the main exhaust chamber through the first exhaust branch and is discharged through the gas collection port 7; the exhaust gas from the H2O source area enters the second gas collection chamber of the main exhaust chamber through the second exhaust branch and is discharged through the gas collection port 7; the serpentine isolation plate 6 completely blocks the mixing path of the two exhaust gases.

[0047] After the substrate is deposited, it is sent out of the reaction chamber. The precursor supply component is turned off, and the isolation gas component and the evacuation system are kept running for a period of time to remove the residual gas in the reaction chamber before the equipment is turned off.

[0048] The third embodiment of this utility model: This embodiment of a space atomic layer deposition apparatus integrates a chemical vapor deposition reaction structure as described above.

[0049] In the description of this utility model, it should be understood that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. Furthermore, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, features defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature. In the description of this utility model, unless otherwise stated, "a plurality of" means two or more.

[0050] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0051] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present utility model, and these improvements and modifications should also be considered within the protection scope of the present utility model.

Claims

1. A chemical vapor deposition reaction structure, comprising a reaction chamber body, wherein a substrate stage for supporting and transporting a substrate is disposed within the reaction chamber body, characterized in that, Along the substrate transport direction, the reaction chamber body is provided with: The first precursor supply assembly (1) and the second precursor supply assembly (2) are respectively disposed on both sides of the reaction chamber, with the nozzle facing the substrate conveying surface. The first precursor supply assembly (1) is used to supply the first precursor to the substrate surface, and the second precursor supply assembly (2) is used to supply the second precursor to the substrate surface. A first isolation gas assembly (3) is provided on the outside of both the first precursor supply assembly (1) and the second precursor supply assembly (2), and a second isolation gas assembly (4) is provided between the first precursor supply assembly (1) and the second precursor supply assembly (2). The first isolation gas assembly (3) and the second isolation gas assembly (4) have the same structure. The first isolation gas assembly (3) includes two inert gas curtains and an exhaust channel located between the two inert gas curtains. The two inert gas curtains and the exhaust channel on their inner sides together form an isolation sealing ring for separating the first precursor and the second precursor.

2. The chemical vapor deposition reaction structure as described in claim 1, characterized in that, The jetting direction of the two inert gas curtains constituting the isolation sealing ring is towards the surface of the substrate, and the suction port of the suction channel is towards the area between the two inert gas curtains.

3. The chemical vapor deposition reaction structure as described in claim 2, characterized in that, The inert gas curtain is a curtain-like airflow formed by a slit nozzle, and the air intake of the air extraction channel is a slit structure parallel to the slit nozzle.

4. The chemical vapor deposition reaction structure as described in claim 1, characterized in that, It also includes an exhaust separation assembly (5), which includes: A first exhaust branch connected to the first precursor supply assembly (1); A second exhaust branch connected to the second precursor supply assembly (2); A main exhaust chamber is provided with an isolation plate (6) inside, which is used to physically separate the airflow from the first exhaust branch and the second exhaust branch.

5. The chemical vapor deposition reaction structure as described in claim 4, characterized in that, The isolation plate (6) divides the total exhaust chamber into a first gas collection chamber and a second gas collection chamber that are not connected to each other. The first exhaust branch is connected to the first gas collection chamber, and the second exhaust branch is connected to the second gas collection chamber.

6. The chemical vapor deposition reaction structure as described in claim 5, characterized in that, At least one air inlet (7) is provided in the total exhaust chamber on both sides of the isolation plate (6), and the first air inlet chamber and the second air inlet chamber are respectively connected to the corresponding air inlet (7).

7. The chemical vapor deposition reaction structure as described in claim 4, characterized in that, The isolation plate (6) has a serpentine distribution structure.

8. A space atomic layer deposition apparatus, characterized in that, It integrates a chemical vapor deposition reaction structure as described in any one of claims 1 to 7.

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