A plasma processing apparatus

Abstract

The utility model discloses a kind of plasma processing equipment, comprising: upper cover assembly, chamber assembly, lower electrode assembly, gas inlet control assembly, vacuum control assembly.Process chamber is enclosed by chamber assembly and its top upper cover assembly.The chamber assembly includes cavity and back door plate, cavity side wall and back door plate are respectively embedded first heating component and second heating component, and respectively symmetrically distributed.Lower electrode assembly includes: with the lower electrode cavity of back door plate connection, and pedestal and electrostatic chuck installed on its upper end surface.Gas inlet control assembly is connected with upper cover assembly top, and process gas is introduced.The center of chamber bottom surface is equipped with the air outlet connected with vacuum control assembly.Upper cover assembly, pedestal assembly, chamber assembly and air outlet coaxial arrangement.The processing equipment described in the utility model is designed and integrated by gas flow field, temperature distribution thermal field, radio frequency field, electrostatic field and other control elements, affects etching process to carry out effect, enhances etching process adjustment means.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor processing, specifically to a plasma processing device. Background Technology

[0002] Plasma processing equipment generates plasma by dissociating process gas using a radio frequency electric field. The plasma concentration and distribution are adjusted by factors such as the radio frequency electric field distribution, gas flow rate, gas pressure, process chamber temperature, and chamber flow field. Combined with the lower electrode electric field strength and temperature distribution, this allows the equipment to influence the process and achieve ideal etching profiles, etching rates, and etching uniformity. The control of these factors is typically achieved indirectly through multiple process sub-steps. Adjusting relevant parameters within these sub-steps alters the process's effectiveness, resulting in desired aperture size, sidewall tilt angle, film thickness, and other parameters. Through the successive execution of these sub-steps, the desired wafer morphology and size are ultimately achieved.

[0003] Parameter adjustment is a necessary means of process control and serves as the goal and evaluation standard for the development of processing equipment. Therefore, in developing plasma processing equipment, components with corresponding functions are used to achieve parameter control—these components are the core control carriers of the equipment, and the adjustment range and influence effect achievable by these functions in actual control processes constitute the "adjustment window" of those functions. This is crucial for obtaining good wafer morphology and dimensions during the etching process.

[0004] This invention requires further optimization of the uniformity and controllability of the temperature field. Utility Model Content

[0005] The purpose of this invention is to provide a plasma processing device that, through an integrated and symmetrical structural design, enables various control methods to improve the uniformity of plasma gas distribution.

[0006] To achieve the above objectives, this utility model provides a plasma processing device, comprising: The upper cover assembly has an air inlet on its upper surface and several air outlets that are centrally symmetrical about the center of the upper cover assembly and evenly distributed around its circumference on its lower surface. A chamber assembly, together with a top cover assembly, forms a process chamber. The chamber assembly includes a cavity body and a rear door panel. The cavity body includes a side wall and a bottom surface. A first heating element is embedded in the side wall of the cavity body. The first heating element is arranged along a first direction, and multiple first heating elements are symmetrically distributed about the central axis of the chamber assembly parallel to the first direction. The rear door panel has a cantilever extending along a second direction, and the cantilever has a cavity extending along the second direction inside. A second heating element is embedded in the rear door panel, extending along the second direction, and the second heating element is symmetrical about the cantilever. An exhaust port is provided at the center of the bottom surface of the chamber. The lower electrode assembly includes an electrostatic chuck, a base, an insulating ring assembly, and a lower electrode cavity arranged sequentially from top to bottom; the lower electrode assembly is connected to the rear door panel via a cantilever, and the lower electrode cavity communicates with the cavity of the cantilever; the lower electrode assembly is located at the center of the process chamber; A vacuum control assembly is connected to the air extraction port; and the central axis of the upper cover assembly, the central axis of the lower electrode assembly, the central axis of the chamber assembly, and the central axis of the air extraction port are coaxially arranged.

[0007] Optionally, each of the first heating components includes: a first heating rod and a first temperature sensor. The first heating rod heats the process chamber through the side wall of the heating chamber. The first temperature sensor is located on the inner side adjacent to the first heating rod and close to the side wall of the chamber to measure and transmit the temperature information of the process chamber. Each of the second heating components includes: a second heating rod and a second temperature sensor; the rear door panel is sealed to its adjacent chamber sidewall by a sealing ring; the second heating rod heats the process chamber by heating the rear door panel, and the second temperature sensor is located near the second heating rod.

[0008] Optionally, a liner is provided on the surface of the chamber sidewall facing the lower electrode assembly, the top end of the liner extends to the top end of the chamber sidewall, the bottom end of the liner extends toward the outer wall of the lower electrode cavity, and the liner is located above the cantilever. The bottom end of the first heating rod extends along the first direction to a position below the end of the inner substrate, and the position of the second heating rod is on the same horizontal plane as the bottom end of the first heating rod.

[0009] Optionally, the upper cover assembly includes: The upper plate has a first surface and an opposing second surface; the first surface of the upper plate is provided with an air inlet, the air inlet including a first air inlet located at the center of the first surface and a second air inlet adjacent to the first air inlet; The lower plate has a third surface opposite to the second surface and a fourth surface opposite to the third surface. The lower plate is disposed below the upper plate and is coaxially arranged with the upper plate. A plurality of air outlets are located on the fourth surface of the lower plate. The air outlets include a plurality of first air outlets located in the edge region of the lower plate, a plurality of second air outlets located in the middle region of the lower plate, and a plurality of third air outlets located in the central region of the lower plate. A first gas passage extends radially along the third surface of the lower plate and is located between the second surface of the upper plate and the third surface of the lower plate; the first gas passage is connected to the first air inlet and to the first air outlet and the second air outlet. The second gas passage extends vertically through the lower plate; and both ends of the second gas passage are connected to the second air inlet and the third air outlet, respectively.

[0010] Optionally, the lower plate includes a partition, which is disposed in the central region of the upper surface of the lower plate, separating the first gas channel and the second gas channel to the upper and lower surfaces of the partition, respectively. The upper surface of the partition is provided with an upwardly protruding air nozzle, which penetrates the upper and lower surfaces of the partition and is connected to the second air inlet and the third air outlet respectively. The lower plate also includes a flow equalization section, which is disposed in the central region of the lower plate and located between the partition and the third air outlet. The flow equalization section is provided with flow equalization holes penetrating its upper and lower surfaces. The flow equalization holes include several vertical straight channels and several inclined channels at a certain angle to the vertical direction. The several inclined channels are evenly arranged around the several vertical straight channels and are corresponding to the third air outlet.

[0011] Optionally, it also includes: a coil assembly and a radio frequency matching assembly connected thereto; The coil assembly is located above the upper cover assembly and includes: an inner coil and an outer coil disposed on the same plane and concentrically, and the inner coil and the outer coil are coaxially disposed with the upper cover assembly; the outer coil is disposed outside the inner coil; The radio frequency matching component is connected to the first power supply component and provides radio frequency current to the coil component; the radio frequency matching component includes: a matching unit and a power divider connected in sequence to the first power supply component, and the power divider is also connected to the inner coil and the outer coil; The ratio of the average radius of the inner coil to the radius of the wafer is 0.5, and the ratio of the average radius of the outer coil to the radius of the wafer is 1.5.

[0012] Optionally, a base is provided between the top cover assembly and the chamber sidewall; the base is a truncated ring structure, comprising: a base body, an edge heating element, and a clamping element; one side of the base body is connected to the chamber sidewall, and the other side is provided with a mounting hole for connecting the top cover assembly; the outer side wall of the base is provided with a transverse groove extending circumferentially along the base body; the edge heating element is disposed inside the transverse groove; the clamping element is disposed outside the transverse groove, and the clamping element is configured to provide pressure to the edge heating element radially; A top heating element is provided between the top cover assembly and the coil assembly. The top heating element is coaxial with the top cover assembly and the coil assembly to heat the central and middle areas of the top cover assembly. Furthermore, a pressure plate is provided between the top heating element and the coil assembly, the pressure plate being used to fix the top heating element onto the upper cover assembly and seal the upper cover assembly.

[0013] Optionally, the sidewall of the chamber facing the lower electrode assembly has n first supports extending radially, n≥1, and the first supports are symmetrically distributed about the central axis of the chamber assembly parallel to the first direction; The outer wall of the lower electrode assembly extends radially with n second supports that correspond one-to-one with each of the first supports, and each second support is arranged opposite to the corresponding first support. Each pair of oppositely arranged first and second supports cooperate to support a virtual cantilever; and the cantilever and each virtual cantilever are centrally symmetrical about the center of the lower electrode assembly.

[0014] Optionally, a conductive path is formed between the lower electrode assembly and the chamber sidewall, the conductive path sequentially including: The second support platform, the second induction coil disposed between the virtual cantilever and the second support platform, the virtual cantilever, the first induction coil disposed between the virtual cantilever and the first support platform, and the first support platform.

[0015] Optionally, the base is equipped with an electrostatic chuck at its top, and the base has an internal outer helium gas pipeline, an inner helium gas pipeline, and a cooling pipeline. One end of the inner helium gas pipeline is connected to a helium gas source, and the other end is connected to the central area of ​​the electrostatic chuck. One end of the outer helium gas pipeline is connected to a helium gas source, and the other end is connected to the edge area of ​​the electrostatic chuck. One end of the cooling pipeline is connected to a cooling machine, and the other end is connected to the electrostatic chuck to cool the entire area of ​​the electrostatic chuck.

[0016] Optionally, the vacuum control component includes: A molecular pump, one end of which is connected to the air extraction port via a swing valve, the swing valve being used to control the air extraction rate within the process chamber; A dry pump is connected to the other end of the molecular pump.

[0017] Compared with the prior art, the technical solution of this utility model has at least the following beneficial effects: The processing equipment described in this invention ensures uniform temperature distribution throughout the process chamber by providing a top heating element above the upper cover assembly, an edge heating element in the base, and a first heating element symmetrically arranged at the center of the chamber sidewall. This prevents process gases (i.e., plasma gases) from adhering to the inner wall of the process chamber and affecting the uniformity of process gas distribution. Simultaneously, since the chamber assembly includes a cavity and a rear door panel, which are not integrated designs, and the rear door panel is sealed to the chamber sidewall via a sealing ring, the heat transfer capacity from the chamber sidewall to the rear door panel is weakened. Therefore, to prevent the rear door panel from being unheated by the first heating element, this invention provides a second heating element symmetrically arranged about the cantilever within the rear door panel, further ensuring the uniformity of temperature inside the process chamber, ensuring the uniform distribution of process gases (i.e., plasma gases), and thus ensuring uniform reaction rates at various locations on the wafer surface. Meanwhile, the bottom end of the first heating rod of the first heating component is located below the inner substrate end, and the second heating rod of the second heating component is also located below the inner substrate end and is on the same horizontal plane as the bottom end of the first heating rod, to prevent the end of the second heating rod from heating and causing local overheating. This design effectively prevents uneven temperature distribution in the reaction space (i.e., the space where the wafer surface reaction is located) from causing uneven distribution of process gas (i.e., plasma gas) and avoids undesirable deposition of process gas on the cavity wall.

[0018] The processing equipment described in this invention, through the coaxial arrangement of the upper cover assembly, lower electrode assembly, and the exhaust port of the process chamber, ensures that the flow field formed by the process gas (i.e., etching gas or deposition gas) is centrally symmetrically distributed within the process chamber as it flows from the upper cover assembly to the exhaust port. Furthermore, the inner substrate end has a perforated grid, which forms a uniform gas channel surrounding the top edge of the lower electrode assembly (i.e., the edge of the electrostatic chuck), ensuring the uniformity of the process gas distribution at the edge of the electrostatic chuck. Simultaneously, the lower electrode assembly is grounded via a second support, a second induction coil, a virtual cantilever, a first induction coil, and a first support, improving the uniformity of the electric field at the edge of the electrostatic chuck, thereby improving the uniformity of the process gas at the wafer edge.

[0019] The processing equipment described in this invention features flow channels (i.e., a first gas flow channel and a second gas flow channel) arranged in sections on the lower plate of the upper cover assembly. Gas is supplied to the first and second gas flow channels through a first air inlet and a second air inlet, respectively. By adjusting the gas flow rate ratio of different air inlets, the concentration distribution of process gas at various locations within the process chamber can be regulated. Furthermore, the second gas flow channel includes a vertical straight channel and an inclined channel. The different lengths of these two channels create different gas flow resistances, thereby adjusting the distribution of process gas above the central area of ​​the electrostatic chuck. Simultaneously, the gas supply assembly of this invention is equipped with multiple sets of process gas pipelines to transmit different process gases. The exhaust valves and exchange valves in these different process gas pipeline sets work together to achieve rapid alternation of deposition gas and etching gas within the process chamber.

[0020] The processing device of this utility model has its coil assembly and lower electrode assembly coaxially arranged to ensure uniform distribution of process gas (i.e., plasma gas) in the reaction space; and the inner coil and outer coil are adjusted by a power distributor to adjust the power ratio distributed to the inner coil and outer coil, thereby adjusting the current flowing through the inner coil and outer coil, thereby adjusting the magnetic field strength in the central and edge areas of the process chamber, and indirectly affecting the plasma concentration generated near the coil.

[0021] The processing equipment described in this utility model achieves pressure regulation of the process chamber through the coordinated arrangement of a gas supply component and a vacuum control component. By coordinating the adjustment of the flow controller and the opening of the swing valve, the pressure inside the process chamber is kept constant; or, under a certain process gas flow rate, the opening of the swing valve is changed to adjust the pressure inside the process chamber, thereby achieving flexible adjustment of the process chamber pressure.

[0022] The processing equipment of this invention provides a bias electric field to the electrostatic chuck by setting an introduction structure in the lower electrode cavity; the overall temperature of the electrostatic chuck is regulated by the cooling pipeline, and the adsorption effect of process by-products can be enhanced by lowering the temperature; the electrostatic chuck is cooled in different regions by the outer and inner helium pipelines to adjust the temperature of the wafer in different regions, thereby affecting the deposition effect of process by-products, and can be used to adjust the uniformity of the reaction rate between the central and edge regions on the wafer surface. Attached Figure Description

[0023] Figure 1 This is a system schematic diagram of the plasma processing equipment described in this utility model.

[0024] Figure 2 This is a top view of the process chamber of the plasma processing equipment described in this utility model.

[0025] Figure 3This is a longitudinal sectional view of the process chamber of the plasma processing equipment described in this utility model.

[0026] Figure 4 This is a schematic diagram of the assembly of the upper cover component in the plasma processing equipment described in this utility model.

[0027] Figure 5 This is a schematic diagram of the structure of the lower plate in the plasma processing equipment described in this utility model.

[0028] Figure 6 This is a schematic diagram of the vertical and inclined flow channels in the plasma processing equipment described in this utility model.

[0029] Figure 7 This is a schematic diagram of the assembly of the upper cover assembly and the coil assembly in the plasma processing equipment described in this utility model.

[0030] Figure 8 This is a schematic diagram of the gas supply component in the plasma processing equipment described in this utility model.

[0031] In the figure, 1-upper cover assembly, 110-upper plate, 111-second air inlet, 112-first air inlet, 120-lower plate, 121-first air outlet, 122-second air outlet, 130-partition, 140-flow equalization section, 141-inclined flow channel, 142-vertical flow channel; 2-Process chamber, 210-Rear door panel, 211-Second heating rod, 220-Cavity side wall, 221-First heating rod, 223-Exhaust port, 230-Inner lining; 31-Gas transmission pipeline, 32-Gas control unit, 321-Flow controller, 323-Gas exchange valve, 325-Exhaust valve, 341-Second intake pipeline, 342-First intake pipeline, 36-Process gas source, 328-Exhaust main pipe; 401-Pressure plate, 402-Top heating element, 411-Outer coil, 412-Inner coil, 420-Base, 421-Coil bracket, 422-Support bracket, 423-Clamping element, 424-Edge heating element, 425-First power supply assembly, 426-Matcher; 510-Lower electrode assembly, 511-Electrostatic chuck, 5111-Second power supply assembly, 5112-Helium source, 5113-Cooler, 512-Lower electrode cavity, 513-Insulating ring assembly, 514-Base, 521-Cantilever, 522-Virtual cantilever, 531-First support platform, 532-Second support platform, 541-First induction coil, 542-Second induction coil, 550-Grounding ring; 701 - Swing valve, 702 - Molecular pump, 703 - Dry pump, 8 - Wafer. Detailed Implementation

[0032] The technical solution of this utility model will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this utility model. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model.

[0033] In the description of this utility model, it should be noted that the terms "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0034] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0035] Please see Figure 1 , Figure 2 and Figure 3This utility model provides a plasma processing device, including: a top cover assembly 1, a chamber assembly, a base assembly, and a vacuum control assembly. The top cover assembly 1 has an air inlet on its upper surface and a plurality of air outlets symmetrically arranged about the center of the top cover assembly 1 on its lower surface, to achieve uniform air intake for the processing device. The chamber assembly and the top cover assembly 1 form a process chamber 2, the inner wall of which is approximately cylindrical. The chamber assembly includes a cavity and a rear door panel 210. The cavity includes a chamber sidewall 220 and a chamber bottom surface. The inner surface of the chamber sidewall 220 is arc-shaped to form the sidewall of the process chamber 2. A first heating element is embedded in the chamber sidewall 220, the first heating element is arranged along a first direction, and a plurality of the first heating elements are symmetrically distributed about the central axis of the chamber assembly parallel to the first direction. The rear door panel 210 of the chamber assembly... The rear door panel 210 is openable and closeable relative to the cavity. It is provided with a cantilever 521 extending along the second direction. The first direction and the second direction form a certain angle, and the angle between the first direction and the second direction is 90°. The cantilever 521 is provided with a cavity extending along the second direction. The rear door panel 210 is embedded with a second heating component extending along the second direction to supplement the rear door panel 210 with heat. The multiple second heating components are symmetrical about the cantilever 521 to ensure uniform temperature distribution of the rear door panel 210. An air extraction port 223 is provided at the center of the bottom surface of the cavity. The base assembly includes, from top to bottom, an electrostatic chuck 511, a base 514, an insulating ring assembly 513, and a lower electrode cavity 512. The lower electrode cavity 512 supports the electrostatic chuck 511 and the base 514, while also isolating the sealed space formed by the lower electrode cavity 512 and the base 514 from the process chamber 2. The base 514 is used to input radio frequency current / high-voltage DC current to the electrostatic chuck 511, to heat or cool the electrostatic chuck 511, and to mount components for wafer lifting. The electrostatic chuck 511 is used to support, cool, and construct a bias electric field for the wafer. The insulating ring assembly 513 isolates the electrostatic chuck 511 and the base 514 from the circumferential plasma gas (i.e., process gas). The lower electrode assembly 510 is connected to the rear door panel 210 via a cantilever 521, and the lower electrode cavity 512 communicates with the cavity of the cantilever 521. The lower electrode assembly 510 is located at the center of the process chamber 2. The vacuum control component is connected to the extraction port 223; and the central axis of the upper cover component 1, the central axis of the lower electrode component 510, the central axis of the chamber component and the central axis of the extraction port 223 are coaxially arranged to ensure that the process gas can be evenly distributed in the process chamber 2 as it enters from the outlet of the upper cover component 1 and is extracted from the extraction port 223.

[0036] The chamber sidewall 220 is made of aluminum, giving it excellent thermal conductivity. The first heating element is embedded in the chamber sidewall 220 to heat the entire process chamber 2, ensuring a uniform temperature distribution within the chamber and preventing process gases from depositing on the surface of the chamber sidewall 220 due to excessively low temperatures.

[0037] Please see Figure 3 Since the chamber sidewall 220 with cantilever 521 is an openable rear door panel 210, and the rear door panel 210 is sealed to its adjacent chamber sidewall 220 by a sealing ring, the setting of the sealing ring blocks the heat conduction between the rear door panel 210 and its adjacent chamber sidewall 220, affecting the heating effect of the first heating component on the rear door panel 210. Therefore, the processing equipment of this utility model is also provided with a second heating component to heat the rear door panel 210 in order to maintain the chamber sidewall 220 so that the overall temperature distribution of the process chamber 2 is uniform.

[0038] Furthermore, in order to keep the temperature of the process chamber 2 constant, both the first heating element and the second heating element have temperature protection design.

[0039] Specifically, each of the first heating components includes: a first heating rod 221, a first temperature sensor, and a first over-temperature switch. The first heating rod 221 heats the process chamber 2 through the side wall 220 of the heating chamber. The first temperature sensor is located near the first heating rod 221 and close to the inner side of the side wall 220 of the chamber to measure and transmit the temperature information of the process chamber 2. The first over-temperature switch is signal-connected to both the first temperature sensor and the first heating rod 221, receives the temperature information sent by the first temperature sensor, and controls whether to cut off the power to the first heating rod 221 based on the temperature information. The first temperature sensor detects the temperature of the side wall 220 of the process chamber 2 near the first heating rod 221 and sends the temperature information to the first over-temperature switch. The first over-temperature switch determines whether the temperature reflected by the temperature information exceeds a set temperature threshold of the process chamber 2. If the temperature exceeds the temperature threshold, the first heating rod 221 is cut off to stop heating the side wall 220 of the chamber; otherwise, the first heating rod 221 is continuously powered on to control the temperature of the process chamber 2.

[0040] Each of the second heating components includes: a second heating rod 211, a second temperature sensor, and a second over-temperature switch. The second heating rod 211 heats the process chamber 2 by heating the rear door panel 210. The second temperature sensor is located near the second heating rod 211. The second over-temperature switch is connected to both the second temperature sensor and the second heating rod 211, receiving temperature information from the second temperature sensor and controlling whether to cut off power to the second heating rod 211 based on the temperature information. The second temperature sensor detects the temperature of the rear door panel 210 near the second heating rod 211 in the process chamber 2 and sends temperature information to the second over-temperature switch. The second over-temperature switch determines whether the temperature reflected by the temperature information exceeds a set temperature threshold for the process chamber 2. If the temperature exceeds the temperature threshold, the second heating rod 211 is cut off to stop heating the rear door panel 210; otherwise, the second heating rod 211 is continuously powered on to control the temperature of the process chamber 2.

[0041] For further information, please see [link / reference]. Figure 2 and Figure 3 A liner 230 is provided on the surface of the chamber sidewall 220 facing the lower electrode assembly 510. The top end of the liner 230 extends to the top end of the chamber sidewall 220, and the bottom end of the liner 230 extends toward the outer wall of the lower electrode cavity 512. The liner 230 is located above the cantilever 521. The wafer carried by the lower electrode assembly 510 is located in the reaction space formed by the liner 230 and the upper cover assembly 1, and the process gas reacts with the wafer surface in this reaction space. To ensure uniform temperature distribution in the reaction space, the bottom end of the first heating rod 221 extends along the first direction to a position below the bottom end of the liner 230, ensuring that the chamber wall surrounding the reaction space is uniformly heated; and to prevent the end of the second heating rod 211 from heating and causing local overheating, the position of the second heating rod 211 is on the same horizontal plane as the bottom end of the first heating rod 221, that is, the second heating rod 211 is located below the liner 230, so that the rear door panel 210 can be uniformly heated by the side surface of the second heating rod 211.

[0042] Furthermore, to achieve uniform air intake from the top cover assembly 1 into the process chamber 2 (i.e., the reaction space), please refer to [link to relevant documentation]. Figures 4-6 The upper cover assembly 1 includes: an upper plate 110, a lower plate 120, a first gas channel, and a second gas channel.

[0043] Specifically, the upper plate 110 has a first surface and an opposing second surface. The first surface of the upper plate 110 is provided with an air inlet, which includes a first air inlet 112 located at the center of the first surface and a second air inlet 111 adjacent to the first air inlet 112.

[0044] The lower plate 120 has a third surface opposite to the second surface of the upper plate 110 and a fourth surface opposite to the third surface. The lower plate 120 is disposed below the upper plate 110 and is coaxially arranged with the upper plate 110. A plurality of air outlets are located on the fourth surface of the lower plate 120. The air outlets include a plurality of first air outlets 121 located in the edge region of the lower plate 120, a plurality of second air outlets 122 located in the middle region of the lower plate 120, and a plurality of third air outlets located in the central region of the lower plate 120.

[0045] Please see Figure 5 The first gas channel extends radially along the third surface of the lower plate 120, located between the second surface of the upper plate 110 and the third surface of the lower plate 120. The first gas channel communicates with the first inlet 112, and with the first outlet 121 and the second outlet 122, allowing the process gas to sequentially pass through the first inlet 112 and the first gas channel, and then be blown from the first outlet 121 and the second outlet 122 towards the non-central region of the reaction space. In a preferred embodiment, the projection of the first outlet 121 towards the lower electrode assembly 510 is located outside the wafer profile, and the projection of the second outlet 122 towards the lower electrode assembly 510 is located on the wafer, ensuring uniform distribution of process gas on the wafer surface.

[0046] The second gas channel extends vertically through the lower plate 120; and its two ends are connected to the second inlet 111 and the third outlet, respectively. The process gas is sequentially blown into the central region of the reaction space through the second inlet 111, the second gas channel, and the third outlet.

[0047] Please see Figure 4 The first air intake channel and the second air intake channel are not connected, and their air intakes (first air intake 112 and second air intake 111) are also different. The process gas distribution in the central and non-central regions of the reaction space can be adjusted by regulating the flow rate of the process gas entering the first air intake 112 and the second air intake 111, thereby controlling the reaction rate in the central and non-central regions of the wafer and ensuring the uniformity of the reaction rate on the wafer surface.

[0048] In one specific embodiment, please refer to Figure 5 The first air intake channel has a depth and width of 2mm, and 36 air intake channels are evenly arranged along the circumference. For a lower plate with a diameter of 300mm suitable for wafer 8, and where wafer 8 and lower plate 120 are coaxially arranged, please refer to [the relevant documentation]. Figure 6A plurality of second air outlets 122 are evenly distributed on a circumference with a diameter of 200 mm centered on the axis of the lower plate 120; and each second air outlet 122 is vertically arranged with a diameter of 1.5 mm. A plurality of first air outlets 121 are evenly distributed on a circumference with a diameter of 330 mm centered on the axis of the lower plate 120; and each first air outlet 121 is vertically arranged with a diameter of 1.5 mm.

[0049] For further information, please see [link / reference]. Figure 4 The lower plate 120 includes a partition 130, which is disposed in the central region of the upper surface of the lower plate 120, separating the first gas channel and the second gas channel to the upper and lower surfaces of the partition 130, respectively. An upwardly protruding nozzle is provided on the upper surface of the partition 130, penetrating both the upper and lower surfaces of the partition 130 and communicating with the second air inlet 111 and the third air outlet, respectively.

[0050] The lower plate 120 further includes a flow equalization section 140, which is disposed in the central region of the lower plate 120 and located between the partition plate 130 and the third air outlet, allowing the process gas to be blown out sequentially through the second air inlet 111, the nozzle, the flow equalization section 140, and the third air outlet. The flow equalization section 140 is provided with flow equalization holes penetrating its upper and lower surfaces. (See [link to relevant documentation]). Figure 6 The uniform flow orifice includes several vertical direct flow channels 142 and several inclined flow channels 141 at a certain angle to the vertical direction. The inclined flow channels 141 are all evenly arranged around the several vertical direct flow channels 142 and are set corresponding to the third gas outlet. Since the path of the process gas through the inclined flow channel 141 is longer than that through the vertical direct flow channel 142, the power loss of the process gas through the inclined flow channel 141 and the vertical direct flow channel 142 is different. This results in the gas flow velocity near the third gas outlet of the inclined flow channel 141 being lower than the gas flow velocity near the third gas outlet of the vertical direct flow channel 142, thereby increasing the reaction rate in the central region of the wafer and thus achieving uniform reaction rate at all locations on the wafer surface.

[0051] In a preferred embodiment, the angle between the inclined flow channel 141 and the vertical flow channel 142 is 45°.

[0052] For further information, please see [link / reference]. Figure 6 and Figure 7 The processing device of this utility model further includes: a coil assembly and a radio frequency matching assembly connected thereto.

[0053] The coil assembly is located above the upper cover assembly 1 and includes an inner coil 412 and an outer coil 411 disposed on the same plane and concentrically, with the inner coil 412 and outer coil 411 coaxially arranged with the upper cover assembly 1; the outer coil 411 is disposed outside the inner coil 412. The RF matching assembly is connected to the first power supply assembly 425 to provide RF current to the coil assembly; the RF matching assembly includes a matching unit 426 and a power divider connected in sequence to the first power supply assembly 425, and the power divider is also connected to the inner coil 412 and the outer coil 411; the matching unit 426 matches the load impedance with the output impedance of the first power supply assembly 425 to reduce signal reflection and ensure that the RF power can be maximized; the power divider distributes the RF power from the matching unit 426 to the inner coil 412 and the outer coil 411 as needed.

[0054] In this case, the inner coil 412 is shorter, resulting in weak inductance and weak coupling, while the outer coil 411 is longer, resulting in strong inductance and strong coupling. (See also...) Figure 6 In this invention, the ratio of the average radius of the inner coil 412 to the radius of the wafer 8 is 0.5, and the ratio of the average radius of the outer coil 411 to the radius of the wafer 8 is 1.5. Furthermore, the lengths of the outer coil 411 and the inner coil 412 do not exceed 1 / 4 of the wavelength of the first power supply component 425 to avoid the formation of standing waves. Simultaneously, adjacent turns of the inner coil 412 (or outer coil 411) can be nested together to enhance their coupling effect.

[0055] In one specific embodiment, please refer to Figure 6 The wafer 8 has a radius of 150 mm and is coaxially arranged with the coil assembly. The outer coil 411 has an average radius of 225 mm and the inner coil 412 has an average radius of 75 mm.

[0056] Please see Figure 1 The inner coil 412 and the outer coil 411 couple the energy of the first power supply assembly 425 through the upper cover assembly 1 to the plasma in the process chamber 2 via electromagnetic induction. Since both the outer coil 411 and the inner coil 412 are connected to a power divider, the power ratio distributed to the inner coil 412 and the outer coil 411 can be adjusted by adjusting the power divider. This adjustment causes a change in the electromagnetic field strength formed by the coil assembly, which in turn indirectly affects the concentration of plasma gas (i.e., process gas) generated near the upper cover assembly 1 in the process chamber 2, and thus affects the distribution of plasma gas in the reaction space of the process chamber 2.

[0057] Furthermore, to enhance temperature control capabilities and reduce process byproduct adhesion, please refer to [link to relevant documentation]. Figure 7A base 420 is provided between the upper cover assembly 1 and the chamber sidewall 220. The base 420 is a truncated ring structure, coaxially arranged with the upper cover assembly 1. The base 420 includes: a base body, an edge heating element 424, and a clamping element 423. Specifically, the lower side of the base body is connected to the chamber sidewall 220, and its upper side is provided with a mounting hole for connecting the upper cover assembly, connecting the chamber sidewall 220 and the upper cover assembly 1 together; the outer side wall of the base 420 is provided with a concentric annular transverse groove extending circumferentially along the base body; the edge heating element 424 is disposed on the inner side of the transverse groove for heating the edge area of ​​the upper cover assembly 1; the clamping element 423 is disposed on the outer side of the transverse groove, and the clamping element 423 is configured to provide pressure to the edge heating element 424 radially to fix the edge heating element 424.

[0058] A top heating element 402 is provided between the upper cover assembly 1 and the coil assembly. The top heating element 402 is coaxial with the upper cover assembly 1 and the coil assembly to heat the central and middle areas of the upper cover assembly 1. At this time, the top heating element 402 and the edge heating element 424 cooperate to uniformly heat the upper cover assembly 1 to adjust the top temperature of the process chamber 2 (i.e., the reaction space). At the same time, the first heating element and the second heating element cooperate to heat the side wall 220 of the chamber (including the rear door panel 210), ensuring that the overall temperature of the reaction space is uniform, preventing process gas from adhering to the lower surface of the side wall 220 or the lower plate 120, and preventing uneven temperature distribution from affecting the overall flow direction of the process gas (from the outlet to the exhaust port 223), thereby indirectly controlling the uniform distribution of the process gas (i.e., plasma gas) in the process chamber 2.

[0059] Please see Figure 7 A pressure plate 401 is provided between the top heating element 402 and the coil assembly. The pressure plate 401 is used to fix the top heating element 402 on the upper cover assembly 1 and seal the upper plate 110 and lower plate 120 of the upper cover assembly 1.

[0060] In one embodiment, to protect the coil assembly, please refer to... Figure 7 A cross-shaped coil support 421 is horizontally provided above the coil assembly. The coil support 421 is fixed to the base 420 by vertically extending support brackets 422. There can be four support brackets 422, which are respectively set at the four ends of the cross-shaped coil support 421. The upper end of the support bracket 422 is connected to the end of the cross shape, and the lower end of the support bracket 422 is connected to the outer edge of the upper surface of the base 420.

[0061] Furthermore, in terms of structural layout, in order to improve the uniformity of the process gas flow field in the process chamber 2, the processing equipment of this utility model designs the process chamber 2 as a centrally symmetrical structure about the axis of the lower electrode assembly 510, ensuring that the flow field formed by the process gas flow at each position in the process chamber 2 is also centrally symmetrical about the axis of the lower electrode assembly 510, and preventing the process gas from flowing turbulently in the process chamber 2.

[0062] For details, please see Figure 2 and Figure 3 The sidewall 220 of the chamber, facing the lower electrode assembly 510, has n first supports 531 extending radially, n≥1. The first supports 531 are symmetrically distributed about the central axis of the chamber assembly parallel to the first direction. The outer wall of the lower electrode assembly 510 has n second supports 532 extending radially, each corresponding to one of the first supports 531. Each second support 532 is opposite to its corresponding first support 531. Each pair of oppositely arranged first supports 531 and second supports 532 cooperates to support a virtual cantilever 522. The cantilever 521 and each virtual cantilever 522 are centrally symmetrical about the center of the lower electrode assembly 510 to compensate for the poor uniformity of process gas distribution caused by a single cantilever 521 resulting in a non-centrally symmetrical structure of the process chamber. A gap is reserved between the top end of the cantilever 521 and the virtual cantilever 522 and the bottom end of the liner 230 to reduce the impact of the cantilever 521 and the virtual cantilever 522 on the uniformity of airflow.

[0063] In the preferred embodiment, please refer to Figure 3 The bottom of the liner 230 is provided with a plurality of uniformly arranged pore grids. When the process gas leaves the reaction space, it passes through the pore grids. This design ensures that the power loss of the process gas flowing from the outlet to the bottom of the liner 230 is the same at all locations in the reaction space, improving the uniformity of the process gas distribution in the reaction space, especially near the pore grids of the liner 230 (i.e., where the wafer is placed in the lower electrode support 510). Furthermore, during the process, a plasma sheath layer is distributed on the surface of the pore grids, annihilating the passing charged particles. That is, the process gas is blown into the reaction space of the process chamber 2 in the upper cover assembly 1, and forms plasma gas at the top of the reaction space. It then passes through the pore grids of the liner 230 and is annihilated. The process gas is then extracted from the extraction port 223, where there are no charged particles present.

[0064] For further information, please see [link / reference]. Figure 3 A conductive path is formed between the lower electrode assembly 510 and the chamber sidewall 220, and the conductive path sequentially includes: The second support 532, the second induction coil 542 disposed between the virtual cantilever 522 and the second support 532, the virtual cantilever 522, the first induction coil 541 disposed between the virtual cantilever 522 and the first support 531, and the first support 531.

[0065] Specifically, the second induction coil 542 makes the virtual cantilever 522 make conductive contact with the second support 532 of the lower electrode assembly 510; the first induction coil 541 makes the virtual cantilever 522 make conductive contact with the first support 531 of the chamber sidewall 220; the cooperation of the first induction coil 541 and the second induction coil 542 realizes the conductive connection between the lower electrode assembly 510 and the chamber sidewall 220, and the lower electrode assembly 510 and the chamber sidewall 220 are also conductively connected through the cantilever 521, thereby realizing the formation of n+1 uniformly distributed conductive paths between the lower electrode assembly 510 and the chamber sidewall 220 as a whole, which helps to improve the uniformity of the circumferential electric field distribution of the lower electrode assembly 510.

[0066] In one embodiment, to stabilize and optimize the effect of the radio frequency electric field, such as Figure 3 As shown, the inner liner 230 and the lower electrode support 510 are connected by a grounding ring 550; the grounding ring 550 is arranged around the side wall of the lower electrode support 510; at the same time, the grounding ring 550 is connected to the virtual cantilever 522 through the side wall of the lower electrode assembly 510 located below the inner liner 230, and the grounding ring 550 is also connected to the inner liner 230, so that the charge accumulated by the interaction of plasma gas with the grounding ring 550 and the inner liner 230 is sequentially passed through the lower electrode assembly 510 located below the inner liner 230. The sidewall of the electrode assembly 510 (i.e. the outer wall of the lower electrode cavity 512), the second support 532, the second induction coil 542, the virtual cantilever 522, the first induction coil 541, and the first support 531 conduct to the sidewall 220 of the chamber, realizing the grounding of the liner 230 and the lower electrode support 510, so that the electric field distribution at the edge of the lower electrode assembly 510 in the reaction space has better uniformity, thereby making the process gas (i.e. plasma gas) at the edge of the lower electrode assembly 510 in the reaction space uniformly distributed.

[0067] The base 514 is equipped with an electrostatic chuck 511 on its top. The base 514 contains an outer helium gas pipeline, an inner helium gas pipeline, and a cooling pipeline. One end of the inner helium gas pipeline is connected to a helium source 5112, and the other end is connected to the central area of ​​the electrostatic chuck 511. One end of the outer helium gas pipeline is connected to the helium source 5112, and the other end is connected to the edge area of ​​the electrostatic chuck 511. The base 514 is cooled in sections through the outer and inner helium gas pipelines, thereby achieving sectioned cooling of the electrostatic chuck 511. One end of the cooling pipeline is connected to a cooling machine 5113, and the other end is connected to the electrostatic chuck 511 to cool the entire area of ​​the electrostatic chuck 511.

[0068] The base 514 and the electrostatic chuck 511 are connected to the second power supply component 5111 via the introduction structure 5111, forming a radio frequency negative bias electric field on the wafer surface placed on the electrostatic chuck 511. The negative bias accelerates charged particles to bombard the wafer surface, thereby increasing the wafer surface etching rate. The strength of the negative bias electric field can be adjusted by regulating the power of the second power supply component 5111, thereby affecting the acceleration energy of the plasma gas, which in turn affects the wafer etching rate and the deposition effect of process by-products, thus affecting the wafer's contour morphology.

[0069] The cooling system, serving as a macroscopic control mechanism for the temperature of the electrostatic chuck 511, enhances the adsorption of process byproducts by lowering the overall temperature of the chuck. When the overall temperature of the electrostatic chuck 511 drops to a certain level (e.g., -20°C), the adjustment effectiveness of the cooling system is weakened. At this point, the temperature of the electrostatic chuck 511 can be fine-tuned through the inner and outer helium gas pipelines. By adjusting the helium pressure in these pipelines, a difference in cooling effectiveness between the central and edge regions of the electrostatic chuck 511 can be created, thereby affecting the deposition effect of process byproducts and ultimately achieving uniformity in the reaction rate between the central and edge regions of the wafer.

[0070] Furthermore, such as Figure 1 As shown, the vacuum control assembly includes a molecular pump 702 and a dry pump 703. One end of the molecular pump 702 is connected to the evacuation port 223 via a swing valve 701, and the evacuation rate within the process chamber 2 can be controlled by adjusting the opening of the swing valve 701. The dry pump 703 is connected to the other end of the molecular pump 702 and is used to evacuate the process chamber 2.

[0071] In one embodiment, the molecular pump 702 is a high-speed molecular pump with a pumping capacity of 3200 L / s. At this time, the response capability of the swing valve 701 is also matched with the pumping capacity of the molecular pump 702. Furthermore, the molecular pump 702 has a heating function to assist in the discharge of process byproducts that are extracted along with the process gas.

[0072] Furthermore, the processing equipment of this utility model also includes a gas supply component for providing process gas to the process chamber 2. The gas supply component includes multiple sets of process gas pipelines, each set of process gas pipelines being connected to different process gas sources 36 (e.g., etching gas source, deposition gas source) to supply the process chamber 2 with the process gas required under the current process conditions, thereby enabling rapid switching of the type of process gas in the process chamber 2.

[0073] Specifically, such as Figure 1 and Figure 8As shown, each process gas pipeline group includes: a gas delivery pipeline 31, a first inlet pipeline 342, a second inlet pipeline 341, and a gas control unit 32. The inlet end of the gas delivery pipeline 31 is connected to a process gas source 36. The outlet ends of the first inlet pipeline 342 and the second inlet pipeline 341 are respectively connected to the first inlet port 112 and the second inlet port 111, allowing the first inlet pipeline 342 to supply gas to the first gas channel and the second gas pipeline to supply gas to the second gas channel. The flow ratio of the process gas in the first gas channel and the second gas channel can be changed by adjusting the flow ratio of the process gas in the first gas pipeline and the second gas pipeline. One end of the gas control unit 32 is connected to the outlet end of the gas delivery pipeline 31, and the other end is connected to the inlet end of the first inlet pipeline 342 and the inlet end of the second inlet pipeline 341, thereby adjusting the distribution ratio of the process gas in the first inlet pipeline 342 and the second inlet pipeline 341.

[0074] The gas control unit 32 includes an intake valve, a flow controller 321, and two parallel process gas branches connected sequentially along the process gas intake direction. The flow controller 321 is used to adjust the flow distribution ratio of the process gas in the two process gas branches. The two process gas branches are respectively connected to the intake end of the first intake pipe 342 and the intake end of the second intake pipe 341, supplying gas to the first intake pipe 342 and the second intake pipe 341; and each process gas branch is equipped with a gas exchange valve 323, which is a quick-switching valve used to control whether process gas is introduced into the first intake pipe 342 or the second intake pipe 341, so as to realize the rapid switching of process gas in the process chamber 2.

[0075] To achieve rapid switching of process gases in process chamber 2, such as Figure 1 and Figure 8 As shown, the gas supply assembly further includes an exhaust manifold 328. The exhaust manifold 328 has multiple gas delivery ends, each connected to a process gas branch; the outlet end of the exhaust manifold 328 is connected to the dry pump 703 of the vacuum control assembly to extract the process gas from the process gas branch. Each process gas branch is connected to the exhaust manifold 328 with an exhaust valve 325, which controls the flow of process gas from the process gas branch into the process chamber 2 or the exhaust manifold 328. Preferably, the exhaust valve 325 is a quick-switching valve, capable of switching between open and closed states within 5ms. The exhaust valve 325 ensures the stability of the gas flow in the process gas branch, avoiding fluctuations in the control of the gas control unit 32 caused by changes in the type of process gas.

[0076] In one specific embodiment, please refer to Figure 8The silicon substrate is subjected to deep silicon etching using the Bosch process. The Bosch process includes plasma etching and sidewall polymer deposition steps, requiring multiple switching of the process gas type within the process chamber 2. In this embodiment, the gas supply assembly has two sets of process gas pipelines, connected to the deposition gas source and the etching gas source, respectively. When etching gas is introduced into the process chamber 2, the ventilation valves 323 on the two process gas branches connected to the etching gas source open, while the exhaust valves 325 connecting these two process gas branches to the main exhaust pipe 328 close. At this time, the deposition gas is kept in the intake, but the air exchange valves 323 on the two process gas branches connected to the deposition gas source are closed, while the exhaust valves 325 at the connection between these two process gas branches and the exhaust manifold 328 are opened. This ensures that the flow rate of the deposition gas in the flow controller 321 remains stable, so that the flow rate of the deposition gas remains stable after the erosion gas is switched to the deposition gas in the next process step. The deposition gas in the two process gas branches connected to the deposition gas source in the current step is then pumped away by the dry pump 703. The same operation applies when introducing deposition gas into the process chamber.

[0077] In one specific embodiment, to increase the supply of process gas and stabilize the pressure in the process chamber 2, when the flow rate of process gas at the first inlet 112 and the second inlet 111 increases (i.e., the flow controller 321 increases the flow rate of process gas in the two process gas branches), the opening of the swing valve 701 in the vacuum control component should also increase to increase the pumping speed of the process chamber 2, thereby keeping the pressure in the process chamber 2 constant. Furthermore, under the same pressure conditions in the process chamber 2, the smaller the flow rate of process gas at the first inlet 112 and the second inlet 111, and the smaller the opening of the swing valve 701 in the vacuum control component (i.e., the lower the pumping speed), the longer the residence time of the process gas in the process chamber 2, resulting in better wafer surface deposition and better etching protection.

[0078] In one specific embodiment, in order to adjust the pressure of the process chamber 2, the process gas flow rate at the first air inlet 112 and the second air inlet 111 can be kept constant, and the opening of the swing valve 701 in the vacuum control component can be increased or decreased to reduce or increase the pressure of the process chamber 2.

[0079] Correspondingly, relevant parameters such as the opening degree of the swing valve 701, the output power of the first power supply component 425, the output power of the second power supply component 5111, and the duration of the two process gases entering the process chamber 2 can be programmed to coordinate and set and modify parameters for different process development and development of different progress stages of the same process.

[0080] In summary, the processing equipment described in this utility model possesses outstanding controllability. Through the integrated design of multi-factor control functions, including pressure field, flow field, temperature field, radio frequency field, and electrostatic field, it influences the etching process effect and enhances the means of adjusting the etching process. The coaxial arrangement of the upper cover assembly, lower electrode assembly, and vacuum control assembly adjusts the structure of the process chamber, altering the flow field distribution of the process gas within it. The placement of a top heating element above the upper cover assembly, an edge heating element in the base, and a first heating element and a second heating element on the sidewall of the chamber adjusts the overall temperature distribution of the process chamber, indirectly affecting the distribution of the process gas. The partitioned design of the upper cover assembly, coil assembly, and electrostatic chuck adjusts the distribution of process gas in different areas of the process chamber. The programming of the gas supply assembly and vacuum control assembly enables rapid process alternation and control of the alternation duration.

[0081] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above content. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A plasma processing device, characterized in that, include: The upper cover assembly has an air inlet on its upper surface and several air outlets that are centrally symmetrical about the center of the upper cover assembly and evenly distributed around its circumference on its lower surface. A chamber assembly, together with a top cover assembly, forms a process chamber. The chamber assembly includes a cavity body and a rear door panel. The cavity body includes a side wall and a bottom surface. A first heating element is embedded in the side wall of the cavity body. The first heating element is arranged along a first direction, and multiple first heating elements are symmetrically distributed about the central axis of the chamber assembly parallel to the first direction. The rear door panel has a cantilever extending along a second direction, and the cantilever has a cavity extending along the second direction inside. A second heating element is embedded in the rear door panel, extending along the second direction, and the second heating element is symmetrical about the cantilever. An exhaust port is provided at the center of the bottom surface of the chamber. The lower electrode assembly includes an electrostatic chuck, a base, an insulating ring assembly, and a lower electrode cavity arranged sequentially from top to bottom; the lower electrode assembly is connected to the rear door panel via a cantilever, and the lower electrode cavity communicates with the cavity of the cantilever; the lower electrode assembly is located at the center of the process chamber; A vacuum control assembly is connected to the air extraction port; and the central axis of the upper cover assembly, the central axis of the lower electrode assembly, the central axis of the chamber assembly, and the central axis of the air extraction port are coaxially arranged.

2. The plasma processing equipment according to claim 1, characterized in that, Each of the first heating components includes: a first heating rod and a first temperature sensor. The first heating rod heats the process chamber through the side wall of the heating chamber. The first temperature sensor is located on the inner side of the chamber, adjacent to the first heating rod and close to the side wall of the chamber, to measure and transmit the temperature information of the process chamber. Each of the second heating components includes: a second heating rod and a second temperature sensor; the rear door panel is sealed to its adjacent chamber sidewall by a sealing ring; the second heating rod heats the process chamber by heating the rear door panel, and the second temperature sensor is located near the second heating rod.

3. The plasma processing equipment according to claim 2, characterized in that, A liner is provided on the surface of the sidewall of the chamber facing the lower electrode assembly. The top end of the liner extends to the top end of the sidewall of the chamber, and the bottom end of the liner extends toward the outer wall of the lower electrode cavity. The liner is located above the cantilever. The bottom end of the first heating rod extends along the first direction to a position below the end of the inner substrate, and the position of the second heating rod is on the same horizontal plane as the bottom end of the first heating rod.

4. The plasma processing equipment according to claim 1, characterized in that, The upper cover assembly includes: The upper plate has a first surface and an opposing second surface; the first surface of the upper plate is provided with an air inlet, the air inlet including a first air inlet located at the center of the first surface and a second air inlet adjacent to the first air inlet; The lower plate has a third surface opposite to the second surface and a fourth surface opposite to the third surface. The lower plate is disposed below the upper plate and is coaxially arranged with the upper plate. A plurality of air outlets are located on the fourth surface of the lower plate. The air outlets include a plurality of first air outlets located in the edge region of the lower plate, a plurality of second air outlets located in the middle region of the lower plate, and a plurality of third air outlets located in the central region of the lower plate. A first gas passage extends radially along the third surface of the lower plate and is located between the second surface of the upper plate and the third surface of the lower plate; the first gas passage is connected to the first air inlet and to the first air outlet and the second air outlet. The second gas passage extends vertically through the lower plate; and both ends of the second gas passage are connected to the second air inlet and the third air outlet, respectively.

5. The plasma processing equipment according to claim 4, characterized in that, The lower plate includes a partition, which is disposed in the central region of the upper surface of the lower plate, separating the first gas channel and the second gas channel to the upper and lower surfaces of the partition, respectively. The upper surface of the partition is provided with an upwardly protruding air nozzle, which penetrates the upper and lower surfaces of the partition and is connected to the second air inlet and the third air outlet respectively. The lower plate also includes a flow equalization section, which is disposed in the central region of the lower plate and located between the partition and the third air outlet. The flow equalization section is provided with flow equalization holes penetrating its upper and lower surfaces. The flow equalization holes include several vertical straight channels and several inclined channels at a certain angle to the vertical direction. The several inclined channels are evenly arranged around the several vertical straight channels and are corresponding to the third air outlet.

6. The plasma processing apparatus according to claim 1, characterized in that, Also includes: The coil assembly and its connected RF matching assembly; The coil assembly is located above the upper cover assembly and includes: an inner coil and an outer coil disposed on the same plane and concentrically, and the inner coil and the outer coil are coaxially disposed with the upper cover assembly; the outer coil is disposed outside the inner coil; The radio frequency matching component is connected to the first power supply component and provides radio frequency current to the coil component; the radio frequency matching component includes: a matching unit and a power divider connected in sequence to the first power supply component, and the power divider is also connected to the inner coil and the outer coil; The ratio of the average radius of the inner coil to the radius of the wafer is 0.5, and the ratio of the average radius of the outer coil to the radius of the wafer is 1.

5.

7. The plasma processing apparatus according to claim 6, characterized in that, A base is provided between the top cover assembly and the chamber sidewall; the base is a truncated ring structure, comprising: a base body, an edge heating element, and a clamping element. One side of the base body is connected to the chamber sidewall, and the other side is provided with a mounting hole for connecting the top cover assembly; the outer side wall of the base is provided with a transverse groove extending circumferentially along the base body; the edge heating element is disposed inside the transverse groove; the clamping element is disposed outside the transverse groove, and the clamping element is configured to provide pressure to the edge heating element radially. A top heating element is provided between the top cover assembly and the coil assembly. The top heating element is coaxial with the top cover assembly and the coil assembly to heat the central and middle areas of the top cover assembly. Furthermore, a pressure plate is provided between the top heating element and the coil assembly, the pressure plate being used to fix the top heating element onto the upper cover assembly and seal the upper cover assembly.

8. The plasma processing apparatus according to claim 1, characterized in that, The sidewall of the chamber extends radially toward the lower electrode assembly with n first supports, n≥1, and the first supports are symmetrically distributed about the central axis of the chamber assembly parallel to the first direction. The outer wall of the lower electrode cavity extends radially with n second supports that correspond one-to-one with each of the first supports, and each second support is arranged opposite to the corresponding first support. Each pair of oppositely arranged first and second supports cooperate to support a virtual cantilever; and the cantilever and each virtual cantilever are centrally symmetrical about the center of the lower electrode assembly.

9. The plasma processing apparatus according to claim 8, characterized in that, A conductive path is formed between the lower electrode assembly and the chamber sidewall, the conductive path comprising, in sequence: The second support platform, the second induction coil disposed between the virtual cantilever and the second support platform, the virtual cantilever, the first induction coil disposed between the virtual cantilever and the first support platform, and the first support platform.

10. The plasma processing apparatus according to claim 8, characterized in that, The base is equipped with an electrostatic chuck at its top. The base contains an outer helium gas pipeline, an inner helium gas pipeline, and a cooling pipeline. One end of the inner helium gas pipeline is connected to a helium gas source, and the other end is connected to the central area of ​​the electrostatic chuck. One end of the outer helium gas pipeline is connected to a helium gas source, and the other end is connected to the edge area of ​​the electrostatic chuck. One end of the cooling pipeline is connected to a cooling machine, and the other end is connected to the electrostatic chuck to cool the entire area of ​​the electrostatic chuck.

11. The plasma processing apparatus according to claim 1, characterized in that, The vacuum control component includes: A molecular pump, one end of which is connected to the air extraction port via a swing valve, the swing valve being used to control the air extraction rate within the process chamber; A dry pump is connected to the other end of the molecular pump.

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